WO2012062066A1 - 一种交流led发光装置 - Google Patents

一种交流led发光装置 Download PDF

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Publication number
WO2012062066A1
WO2012062066A1 PCT/CN2011/071439 CN2011071439W WO2012062066A1 WO 2012062066 A1 WO2012062066 A1 WO 2012062066A1 CN 2011071439 W CN2011071439 W CN 2011071439W WO 2012062066 A1 WO2012062066 A1 WO 2012062066A1
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Prior art keywords
led
luminescent material
led chip
led lighting
light
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PCT/CN2011/071439
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English (en)
French (fr)
Inventor
张洪杰
张明
李成宇
赵昆
李东明
张立
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四川新力光源有限公司
中国科学院长春应用化学研究所
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Publication of WO2012062066A1 publication Critical patent/WO2012062066A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/37—Converter circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Definitions

  • the invention relates to an alternating current LED lighting device, and belongs to the technical field of manufacturing an alternating current LED lighting device.
  • LEDs are used in the fields of illumination, display and backlight, and have attracted extensive attention as the most promising next-generation lighting method due to their advantages of energy saving, durability and pollution-free.
  • Conventional LED chips use DC power as the driving current. However, most of them are provided by household frequency, commercial or commercial power, and most of them are provided by power frequency AC. Therefore, when using LEDs for lighting and other purposes, it is necessary to use a rectifier transformer to convert AC-DC. In order to ensure the normal operation of the LED. However, in the process of AC-DC conversion, there is up to 15 ⁇ 30% of power consumption, and the conversion device not only has a short service life, but also has a high cost, and is also time-consuming and inefficient in installation.
  • CN100464111C discloses an alternating current LED lamp which uses LED chips of different illuminating colors in parallel in an alternating current power source, and mainly describes LED chips of different colors to form white light together, and specific circuits thereof, such as red, green and blue light emitting chips, There is no luminescent powder involved.
  • ELEMENTS it is proposed to mount a plurality of small LED chip arrays on a sapphire substrate to provide an illumination device that can be driven by an AC power source.
  • AC LED device which is a plurality of LEDs operating at frequencies above 100 Hz
  • the integrated LED lighting device of the chip utilizes the visual persistence effect of the human eye to compensate for the strobe of the LED device under AC work.
  • AC LED chip a large number of ultra-fine LED dies on a single substrate, which is called an AC LED chip.
  • AC LED chip At the core of the above-mentioned AC LED technology is a large number of micro-die integrated packaged microelectronic circuit processing technologies.
  • the AC LED chip of the Taiwan Industrial Technology Research Institute integrates hundreds of tiny LEDs on a 1 mm square area.
  • such an AC LED chip is difficult to process, and a large number of microchips integrated in a small substrate space may cause problems such as poor heat dissipation.
  • the technical problem to be solved by the present invention is to provide a new AC LED lighting device that solves the stroboscopic problem in the AC power supply mode at low cost.
  • the AC LED lighting device of the present invention does not use the existing multi-microchip integrated AC LED chip, but uses an ordinary single PN junction LED chip, and a phosphor with a specific luminescence lifetime, and a phosphor luminescence with a specific luminescence lifetime. It is used to compensate for the stroboscopic phenomenon of LED devices during power frequency AC fluctuations of no more than 100 Hz, which is simple in production and low in cost.
  • the technical solution of the present invention comprises: an LED chip and a luminescent material capable of emitting light under excitation of the LED chip, wherein: the LED chip comprises only one luminescent PN junction, and the luminescent lifetime of the luminescent material is 1 to 100 ms (preferred) 10-30ms), through the continued illumination of the luminescent material (afterglow) to compensate for the illuminance of the chip when the chip is powered off under non-constant current conditions.
  • the luminescence lifetime of the luminescent material is the time required for the luminescence intensity of the material to fall to 1/e of the maximum intensity at the time of excitation.
  • the LED lighting unit of the present invention can use an LED chip containing only one light-emitting PN junction without using an integrated packaged AC LED chip.
  • the above-mentioned LED lighting unit uses an alternating current having a frequency of not more than 100 Hz, in particular, an alternating current of 50-60 Hz.
  • the light emitted by the LED chip used in the above LED lighting unit may be ultraviolet, visible or infrared light.
  • the luminescent material is a combination of one or more inorganic and/or organic luminescent materials.
  • the luminescent material is a combination of one or more inorganic and/or organic luminescent materials.
  • CaS Eu 2+
  • CaS
  • Tb(acac) 2 (AA)phen Y 2 0 2 S:Eu 3+ ; Y 2 Si0 5 :Tb 3+ ; SrGa 2 S 4 :Ce 3+ ; Y 3 (Al,Ga) 5 0 12 :Tb 3+ ;
  • the LED lighting device of the present invention comprises the above LED lighting unit and driving circuit, and the driving circuit may be a single-direction series circuit, an anti-parallel circuit and a bridge rectifier circuit, as shown in FIGS. Or a combination of any of the above circuits.
  • the alternating current drive circuit has a frequency of no more than 100 Hz.
  • the LED lighting device of the present invention further comprises a light guiding cover layer, which is a non-planar light guiding structure.
  • the light-emitting layer of the LED chip and the light-emitting material are reflected, refracted, scattered, and homogenized by the light-guiding cover layer to be finally mixed to lead to uniform surface light.
  • the light guiding cover layer is a lens or other transparent covering layer, wherein non-luminescent material particles having a particle diameter of less than 5 micrometers may be doped, so that the light output of the chip is evenly scattered.
  • the present invention uses a luminescent material having a specific luminescence lifetime, and when the current period changes, the luminescence of the luminescent material is maintained for a certain period of time in the cycle, thereby making up for the fluctuation of the alternating current.
  • the LED light-emitting device of the present invention can use an LED chip containing only one light-emitting PN junction without using an integrated packaged AC LED chip, the LED chip does not work for half a cycle in the AC cycle, so that the thermal effect thereof is lowered, thus Helps overcome the series of problems caused by the heat generated by the chips in the existing LED lighting devices. Therefore, the LED light-emitting device of the invention has stable and reliable processing and simple cost, and opens up a new way for the LED light-emitting device.
  • FIG. 1 is a schematic diagram of a unidirectional series circuit of an alternating current LED lighting device of the present invention.
  • FIG. 2 is a schematic diagram of an anti-parallel circuit of an alternating current LED lighting device of the present invention.
  • FIG. 3 is a schematic diagram of a bridge rectifier circuit with a normally conducting LED chip in the AC LED lighting device of the present invention.
  • FIG. 4 is a schematic diagram of a bridge rectifier circuit in which an alternating current LED light-emitting device of the present invention is electrically turned on.
  • Figure 5 is a schematic diagram of the composition of the LED light-emitting unit, 1 is a light-emitting material, or a light-emitting layer composed of a light-emitting material and a transparent medium; 2 is an LED chip.
  • the AC LED lighting device of the present invention does not use the existing multi-microchip integrated AC LED chip, but uses an ordinary single PN junction LED chip, and a phosphor with a specific luminescence lifetime, and a phosphor luminescence with a specific luminescence lifetime. It is used to compensate for the stroboscopic phenomenon of LED devices during power frequency AC fluctuations of not more than 100 Hz, which is simple in production and low in cost.
  • the LED lighting unit includes an LED chip and a luminescent material capable of emitting light under excitation of the LED chip, wherein: the luminescent material has an illuminating lifetime of 1 to 100 ms (preferably 10 to 30 ms), and the LED chip is An LED chip comprising only one illuminating PN junction, the LED lighting unit being driven by an alternating current having a frequency of no more than 100 Hz.
  • the above-mentioned LED lighting unit uses an alternating current having a frequency of not more than 100 Hz, in particular, an alternating current of 50-60 Hz.
  • Example 1-12 uses the luminescent material of Table 1 and a commercially available single PN junction LED chip, and the resulting LED illuminating device is packaged by a general sealing technique.
  • Table 2 shows the illuminance in 20 milliseconds taken by the Sarnoff CAM512 high-speed scientific camera taken by the AC LED lighting device of the embodiment under the drive of 50 Hz.
  • Reference Example 1 is a yellow luminescent material YAG: Ce (lighting lifetime of 100 ns) on a commercially available 460 nm blue chip package.
  • the alternating current driving LED illuminating device is formed in the same manner as in the embodiment 1-10, and the reference sample 2 is commercially available.
  • the green long-life material SrAl 2 0 4 :Eu, Dy (luminous lifetime greater than 1 second) on the 460 nm blue chip package drives the alternating current driving LED light emitting device in the same manner as in the embodiment 1_10.
  • the luminance data in Table 2 is relative brightness and is dimensionless.
  • the illuminating brightness of the ac LED illuminating device fluctuates less during the alternating current period when the luminescent material having an excessive luminescence lifetime is used as shown in the reference 2, the energy obtained by the material in the presence of the excitation light cannot be quickly released. , causing its luminescence to be weak, which is not conducive to use as a luminescent material, as shown in Table 2.
  • Table 2 shows that the AC LED lighting device of the present invention has the advantages of small fluctuation of light emission with current variation, and has obvious novelty and creativity compared with the existing LED light-emitting device.

Landscapes

  • Led Devices (AREA)
  • Circuit Arrangement For Electric Light Sources In General (AREA)
  • Led Device Packages (AREA)

Description

一种交流 LED发光装置 技术领域
本发明涉及一种交流 LED发光装置， 属于交流 LED发光装置制造技术领域。
背景技术
目前 LED用于照明、 显示和背光源等领域， 并以其节能、 耐用、 无污染等优点作 为最有希望的下一代照明方式而引起广泛的重视。 传统 LED芯片都用直流电做为驱动 电流， 然而目前不论是家庭、 工商业或公共用电， 大多以工频交流电的方式提供， 因 此在使用 LED作为照明等用途时必须附带整流变压器将交流 -直流转换， 才能确保 LED 的正常运作。 但在交流-直流转换的过程中， 有高达 15〜30%的电力耗损， 同时转换装 置不仅使用寿命较短， 成本也很高， 在安装上也费工费时， 效率不高。
CN100464111C公布了一种利用利用不同发光颜色的 LED芯片并联在交流电源中的 交流 LED灯， 主要描述不同颜色的 LED芯片在一起构成白光， 及其具体电路， 如红、 绿和蓝色发光芯片， 而没有涉及发光粉。
国际专利 WO 2004/023568A1 "LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING
ELEMENTS" 中，提出了在蓝宝石基片上安装多个小的 LED芯片阵列， 从而提供一种可 利用交流电源驱动的发光装置。
美国专禾 lj US 7， 489, 086 B2 "AC LIGHT EITTING DIODE AND AC LED DRIVE METHODS AND APPARATUS"提供了一种交流 LED器件， 该发明是一种在高于 100赫兹的频率下工 作的多个 LED芯片集成封装的 LED照明器件， 利用人肉眼的视觉暂留效应来弥补交流 工作下 LED器件发光的频闪。
韩国首尔半导体和台湾工研院基于类似思路，将大量超细 LED晶粒集成封装在一 个基片上， 并称之为交流 LED芯片。 上述的交流 LED技术的核心是大量微晶粒集成封 装的微电子电路加工技术， 如台湾工业技术研究院的交流 LED芯片在 1平方毫米的面 积上集成封装了上百颗微小的发光二极管。 但是此种交流 LED芯片的加工难度大， 且 数量巨大的微晶片集成在狭小的基板空间内会导致如散热不畅等问题。
为了实现 LED发光装置用于照明、 显示和背光源等领域， 使其在交流电的方式供 电的情况下克服频闪问题， 本领域技术人员一直在不懈地努力。 发明内容
本发明所要解决的技术问题在于提供一种新的交流 LED发光装置， 以低成本地解 决在交流供电的方式下的频闪问题。
本发明交流 LED发光装置不使用现有的多颗微晶粒集成的交流 LED芯片， 而使用 普通的单一 PN结的 LED芯片， 以及具有特定发光寿命的荧光粉， 具有特定发光寿命 的荧光粉发光用来补偿不大于 100赫兹的工频交流电波动期间的 LED器件发光频闪现 象，生产简单、 成本低。
本发明的技术方案： 包括 LED芯片和能够在此 LED芯片激发下发光的发光材料， 其特征在于： 所述 LED芯片只包含一个发光 PN结， 所述发光材料的发光寿命是 1一 100ms (优选 10-30ms)， 通过发光材料的继续发光 （余辉） 弥补非恒流情况下， 芯片 断电时的发光亮度。
根据发光学定义， 发光材料的发光寿命为材料发光强度降到激发时最大强度的 1/e所需的时间。
采用上述发光材料， 本发明 LED发光单元可以不使用集成封装的交流 LED芯片， 而采用只包含一个发光 PN结的 LED芯片。
上述 LED发光单元所使用频率不大于 100赫兹的交流电， 尤其是 50-60赫兹的交 流电驱动。
上述 LED发光单元所采用的 LED芯片发出的光可以是紫外、 可见或红外光。
所述发光材料为一种或多种无机和 /或有机发光材料的组合。 所述发光材料为一种或多种无机和 /或有机发光材料的组合。比如： CaS:Eu2+ ; CaS:
Bi2+,Tm3; ZnS: Tb3+; CaSrS2:Eu2+,Dy3+; SrGa2S4:Dy3+; Ga203:Eu3+; (Y,Gd)B03:Eu3+;
Zn2Si04:Mn2+ ; YB03:Tb3+; Y(V,P)04:Eu3+; SrAl204:Eu2+; SrAl204:Eu2+,B3+;
SrAl204:Eu2+,Dy3+,B3+ ; BaAl204:Eu2+; CaAI204:Eu2+; Sr4Al14025:Eu2+;
Sr4Al14025:Eu2+,Dy3+,B3+ ； Sr3Si05:Eu2+,Dy3+; BaMgAl10O17:Eu2+,Mn2+;
Tb(acac)2(AA)phen; Y202S:Eu3+; Y2Si05:Tb3+; SrGa2S4:Ce3+; Y3(Al,Ga)5012:Tb3+;
Ca2Zn4Ti15036:Pr3+; CaTi03:Pr3+ ; Zn2P207:Tm3+; Ca2P207:Eu2+,Y3+; Sr2P207:Eu2+,Y3+;
Lu203:Tb3+, Sr2AI60ii:Eu2+; Mg2Sn04:Mn2+; CaAI204:Ce3+, Tb3+ ; Sr4AI14025:Tb3+;
Ca10(PO4)6(F,Cl)2: Sb3+,Mn2 ; Sr2MgSi207:Eu2+ ; Sr2CaSi207:Eu2+ ; Zn3(P04)2:Mn2+,Ga3+ ;
CaO:Eu3+ ; Y202S:Mg2+,Ti3+ ; Y202S:Sm3+; SrMg2(P04)2： Eu2+,Gd3+; BaMg2(P04)2： Eu ,Gd'+; Zn2Si04: Mn +,As3+; KLaF4:E +; CdSi03:DyJ+ ;
MgSi03:Eu2+,Mn2+中的一种或多种。
本发明 LED发光装置包括上述 LED发光单元和驱动电路， 所述驱动电路可以是单 向串联电路， 反向并联电路和桥式整流电路， 如图 1-4所示。 或上述电路中任意电路 的组合。 所述交流电流驱动电路频率不大于 100赫兹。
另外， 本发明 LED发光装置还包含导光覆盖层， 为非平面型导光结构。 通过导光 覆盖层将 LED芯片的发光和发光材料的发光进行反射、 折射、 散射并匀光最终混合导 出均匀一致的面光。 其中， 所述导光覆盖层为透镜或其它透明覆盖层， 其中可以掺有 粒径小于 5微米的非发光材料颗粒， 从而使得芯片输出的更加光均匀散射。 本发明的有益效果： 本发明使用具有特定发光寿命的发光材料， 当电流周期变化 时， 发光材料的发光在周期内会维持一定的时间， 从而弥补了由于交流电波动导致的
LED 芯片的发光频闪的影响， 使发光装置在交流周期的光输出保持稳定。 另外， 由于 本发明 LED发光装置可以不使用集成封装的交流 LED芯片， 而采用只包含一个发光 PN 结的 LED芯片， 在交流周期内 LED芯片有半个周期不工作， 使得其热效应下降， 这样 有助于克服现有 LED发光装置中碰到的芯片发热带来的系列难题。 因此， 本发明 LED 发光装置稳定可靠加工简单， 成本低廉， 为 LED发光装置开辟了一条新的途径。
说明书附图
图 1 本发明交流 LED发光装置单向串联电路示意图。
图 2 本发明交流 LED发光装置反向并联电路示意图。
图 3 本发明交流 LED发光装置有常导通 LED芯片的桥式整流电路示意图。
图 4 本发明交流 LED发光装置无常导通 LED芯片的桥式整流电路示意图。
图 5为 LED发光单元组成示意图， 1为发光材料， 或由发光材料和透明介质组成 的发光层； 2为 LED芯片。
以下通过实施例形式的具体实施方式， 对本发明的上述内容再作进一步的详细说 明。 但不应将此理解为本发明上述主题的范围仅限于以下的实例， 凡基于本发明上述 内容所实现的技术均属于本发明的范围。 特别是在基本电路组成上， 本发明的实施例 仅给出了最简单的反向并联式电路， 但本发明的交流 LED发光装置的电路并不局限于 此， 还包括如单向串联和桥式电路。 具体实施方式
本发明交流 LED发光装置不使用现有的多颗微晶粒集成的交流 LED芯片， 而使用 普通的单一 PN结的 LED芯片， 以及具有特定发光寿命的荧光粉， 具有特定发光寿命 的荧光粉发光用来补偿不大于 100赫兹的工频交流电波动期间的 LED器件发光频闪现 象， 生产简单、 成本低。
具体地， LED发光单元， 包括 LED芯片和能够在此 LED芯片激发下发光的发光材 料， 其特征在于： 所述发光材料的发光寿命是 1一 100ms (优选 10-30ms)， 所述 LED 芯片是只包含一个发光 PN结的 LED芯片，所述 LED发光单元采用频率不大于 100赫兹 的交流电驱动。
上述 LED发光单元所使用频率不大于 100赫兹的交流电， 尤其是 50-60赫兹的交 流电驱动。
以下实施例 1-12采用表 1的发光材料和市售的单 PN结的 LED芯片，采用通用封 装技术封装得到的 LED发光装置。
实施例 1-12 表 1
Figure imgf000006_0001
蓝光
9 Sr4Al14025:Eu2+,Dy3+,B 25 ms
( 460纳米）
蓝光
10 MgSi03:Eu2+,Mn2+ 5ms
( 450纳米）
蓝光
11 SrAl204:Eu2+,B3+ 100 ms
( 460纳米）
红外
12 KLaF4:Er3+ 34 ms
( 980纳米） 试验例 1 本发明实施例在交流电周期内的发光亮度
表 2给出了实施例所给出的交流 LED发光装置在 50赫兹市电驱动下用每秒拍 300 张照片的 Sarnoff公司 CAM512型高速科学级照相机拍摄的 20毫秒内的发光亮度。 参 比样 1为市售 460纳米蓝光芯片封装上黄色发光材料 YAG: Ce (发光寿命为 100ns ) 按 实施例 1-10的同一方式组成的交流电流驱动 LED发光装置，参比样 2为市售 460纳米 蓝光芯片封装上绿色长寿命材料 SrAl204:Eu， Dy (发光寿命大于 1秒） 按实施例 1_10 的同一方式组成的交流电流驱动 LED发光装置。表 2中亮度数据为相对亮度，无量纲。
表 2
间
3. 33 6. 66 9. 99 13. 32 16. 65 19. 98 毫秒 毫秒 毫秒 毫秒 毫秒 毫秒 度
参比样 1 2265 3466 0 2153 3570 0 参比样 2 640 866 620 784 846 611 实施例 1 3136 3425 1865 3287 3500 2086 实施例 2 3160 3230 1620 2980 3123 1483 实施例 3 2786 2963 2000 2935 2983 1962 实施例 4 2790 2900 1352 2723 2845 1293 实施例 5 2877 2969 2091 2776 2914 1932 实施例 6 2543 2669 2002 2711 2814 1912 实施例 Ί 1544 2134 1608 1478 2289 1509 实施例 8 1921 2336 1750 1889 2398 1801 实施例 9 2317 2423 1802 2504 2642 1790 实施例 10 2521 3063 1002 2711 2991 912 实施例 11 1883 2346 980 1790 2491 1000 实施例 12 1317 1523 802 1404 1602 900 表 3给出了表 2实施例中各样品对本样品最大发光亮度的归一化值。 表 3
时间
3. 33 6. 66 9. 99 13. 32 16. 65 19. 98 毫秒 毫秒 毫秒 毫秒 毫秒 毫秒 归一亮度^
参比样 1 0.63445 0.97087 0 0.60308 1 0
参比样 2 0.73903 1 0.71594 0.90531 0.97691 0.70554 实施例 1 0.896 0.97857 0.53286 0.93914 1 0.596 实施例 2 0.97833 1 0.50155 0.9226 0.96687 0.45913 实施例 3 0.9324 0.99163 0.66934 0.98226 1 0.65663 实施例 4 0.96207 1 0.46621 0.93897 0.98103 0.44586 实施例 5 0.96901 1 0.70428 0.93499 0.98148 0.65072 实施例 6 0.9037 0.94847 0.71144 0.9634 1 0.67946 实施例 Ί 0.67453 0.93228 0.70249 0.6457 1 0.65924 实施例 8 0.80108 0.97415 0.72977 0.78774 1 0.75104 实施例 9 0.87699 0.91711 0.68206 0.94777 1 0.67752 实施例 10 0.82305 1 0.32713 0.88508 0.97649 0.29775 实施例 11 0.75592 0.94179 0.39342 0.71859 1 0.40145 实施例 12 0.8221 0.95069 0.50062 0.8764 1 0.5618 从表 2和表 3可以看出， 本发明在交流电流周期中的发光较为稳定， 而参比样 1 亦即使用现有市售蓝光芯片封装上发光寿命较短的传统的黄色 YAG : Ce发光材料的 LED 发光装置获得的发光不稳定， 在交流电周期内起伏极大。 详见表 3。
虽然如参比样 2所示的、 使用发光寿命过长的发光材料时该交流 LED发光装置的 发光亮度在交流电周期内波动也较小， 但由于材料在激发光存在时获得的能量不能迅 速释放， 导致其发光较弱， 不利于作为发光材料使用， 详见表 2。 以上试验例说明，本发明的交流 LED发光装置具有发光随电流变化波动小的优点， 与现有 LED发光装置相比具有明显的新颖性和创造性。

Claims

权利要求书
1、 LED发光单元， 包括 LED芯片和能够在此 LED芯片激发下发光的发光材料， 其 特征在于:所述 LED芯片只包含一个发光 PN结，所述发光材料的发光寿命是 1一 100ms, 通过发光材料的余辉弥补非恒流情况下的发光亮度。
2、如权利要求 1所述的 LED发光单元， 其特征在于： 所述 LED芯片采用频率不大 于 100赫兹的交流电驱动， 优选 50-60赫兹的交流电驱动。
3、如权利要求 2所述 LED发光单元， 其特征在于： 所述的发光材料的发光寿命是 10_30ms。
4、如权利要求 2或 3所述的 LED发光单元， 其特征在于： 所述发光材料为无机发 光材料、 有机发光材料或它们的混合。
5、如权利要求 4所述的 LED发光单元， 其特征在于： 所述发光材料为 CaS:Eu2+ ; CaS: Bi2+,Tm3; ZnS: Tb3+; CaSrS2:Eu2+,Dy3+; SrGa2S4:Dy3+; Ga203:Eu3+; (Y,Gd)B03:Eu3+; Zn2Si04:Mn2+ ; YB03:Tb3+; Y(V,P)04:Eu3+; SrAl204:Eu2+; SrAl204:Eu2+,B3+;
SrAl204:Eu2+,Dy3+,B3+ ; BaAl204:Eu2+; CaAI204:Eu2+; Sr4Al14025:Eu2+;
Sr4Al14025:Eu2+,Dy3+,B3+; Sr3Si05:Eu2+,Dy3+; BaMgAl10O17:Eu2+,Mn2+;
b(acac)2(AA)phen; Y202S:Eu3+; Y2Si05:Tb3+; SrGa2S4:Ce3+; Y3(Al,Ga)5012:Tb3+;
Ca2Zn4Ti15036:Pr3+; CaTi03:Pr3+ ; Zn2P207:Tm3+; Ca2P207:Eu2+,Y3+; Sr2P207:Eu2+,Y3+;
Lu203:Tb3+ ; Sr2AI60":Eu2+; Mg2Sn04:Mn2+; CaAI204:Ce3+, Tb3+ ; Sr4AI14025:Tb3+; Caio(P04)6(F,Cl)2: Sb3+,Mn2+; Sr2MgSi207:Eu2+; Sr2CaSi207:Eu2+; Zn3(P04)2:Mn2+,Ga3+;
CaO:Eu3+ ; Y202S:Mg2+,Ti3+ ; Y202S:Sm3+; SrMg2(P04)2： Eu2+,Gd3+;
BaMg2(P04)2： Eu2+,Gd3+; Zn2Si04: Mn2+,As5+; KLaF4:Er3+; CdSi03:Dy3+;
MgSi03： Eu2+,Mn2+中的一种或多种混合。
6、如权利要求 2或 3所述的 LED发光单元， 其特征在于： 所述的 LED芯片发出的 光是紫外、 可见或红外光。
7、 交流 LED发光装置， 其特征在于： 包括交流驱动电路和至少一个权利要求 1-5 任一项所述的 LED发光单元；
其中， 所述的交流驱动电路是单向串联电路， 反向并联电路， 桥式整流电路， 或 它们的任意组合。
8、 根据权利要求 7所述的交流 LED发光装置， 其特征在于： LED发光装置还包括 导光覆盖层。
9、根据权利要求 8所述的交流 LED发光装置， 其特征在于： 所述导光覆盖层中掺 有粒径小于 5微米的非发光材料颗粒。
10、 包括 LED芯片和能够在此 LED芯片激发下发光的发光材料的发光单元在制备 交流 LED发光装置中的用途， 其中所述发光材料的发光寿命是 l〜100ms， 所述 LED芯 片是只包含一个发光 PN结的 LED芯片。
PCT/CN2011/071439 2010-11-09 2011-03-02 一种交流led发光装置 WO2012062066A1 (zh)

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