WO2012004104A1 - Bond strips - Google Patents
Bond strips Download PDFInfo
- Publication number
- WO2012004104A1 WO2012004104A1 PCT/EP2011/060028 EP2011060028W WO2012004104A1 WO 2012004104 A1 WO2012004104 A1 WO 2012004104A1 EP 2011060028 W EP2011060028 W EP 2011060028W WO 2012004104 A1 WO2012004104 A1 WO 2012004104A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bonding
- insulating layer
- ribbon
- bonding wire
- bond
- Prior art date
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Definitions
- Such a bond connection is known from DE 10 2006 025 868 AI.
- bonding wires with arbitrary Querterrorismsflä ⁇ chen, which may therefore be round, oval, square, rectangular, star-shaped or wavy or provided with notches.
- a bonding tape with a computationally ⁇ teckigem cross section and rounded edges is known, which is provided on both broad sides with a coating au ⁇ ßerdem whose the other is well bondable a good solderability and.
- DE 10 2006 025 870 Al discloses a multilayer bonding tapes whose core has a high current-carrying capacity on ⁇ , while the outer layers are well bondable.
- the object is solved by a of a ribbon having formed ⁇ th bonding wire in which one side egg on the metal strip ne insulating layer is applied.
- the metallic strip may be formed with at least two layers of different metals, wherein the insulating layer facing away from the outer side has a good bondability.
- This insulating layer can be applied in the form of a glued and / or rolled-up electrically insulating film. In principle, it works like a self-adhesive insulating tape.
- the insulating layer may be applied by a spraying process.
- the insulating layer can be produced in accordance flüssi ⁇ state in continuous or roll-off. The insulating layer only marginally affects the bondability.
- Figure 1 shows a longitudinal section through a firstforsbei ⁇ game of a bonding wire according to the invention
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The invention relates to a bond wire (1) designed as a bond strip, to one side of which an insulating layer (2) is applied.
Description
Beschreibung description
Bondbändchen mit Isolierschicht Die Erfindung betrifft einen als Bändchen ausgebildeten Bonddraht zur elektrisch leitenden Verbindung zwischen zumindest zwei Kontaktflächen. Bonding tape with insulating layer The invention relates to a bonding wire designed as a ribbon for the electrically conductive connection between at least two contact surfaces.
Bondverbindungen werden zwischen zwei oder mehreren Kontakt- flächen, die zumeist als Bondpads bezeichnet werden, herges¬ tellt, indem eine erste Kontaktfläche mit dem Bonddraht bzw. -bändchen mittels z.B. einem Ultraschall-Reibschweißverfahren (US-Bonden) hauptsächlich bei Raumtemperatur verbunden wird. Danach wird der Draht / das Bändchen in einer Bogenform Are bonds between two or faces several contact, which are usually referred to as bonding pads, herges ¬ tellt by a first contact area with the bonding wire or velocity ribbon by means of eg an ultrasonic friction welding (US bonding) is mainly bonded at room temperature. Thereafter, the wire / ribbon is in an arc shape
(meist als Loop bezeichnet) zur zweiten Kontaktstelle geführt und die zweite Verbindung auf die gleiche Weise wie die erste hergestellt. Danach wird der Draht / das Bändchen hinter der zweiten Kontaktstelle abgeschnitten oder abgerissen. Gegebenenfalls sind beide Abtrennverfahren kombiniert. Diese Bond- Verbindung kann auch auf eine dritte Kontaktstelle und weite¬ re Kontaktstellen weitergeführt werden, bevor der Draht abgeschnitten wird. (usually referred to as a loop) led to the second contact point and the second compound in the same manner as the first produced. Thereafter, the wire / ribbon behind the second pad is cut off or torn off. Optionally, both separation methods are combined. This bond connection can also be continued to a third contact point and ¬ far contact points before the wire is cut off.
Eine solche Bondverbindung ist aus der DE 10 2006 025 868 AI bekannt. Es werden Bonddrähte mit beliebigen Querschnittsflä¬ chen genannt, die also rund, oval, quadratisch, rechteckig, sternförmig oder gewellt oder mit Einkerbungen versehen sein können . Aus der De 10 2006 060 899 AI ist ein Bondbändchen mit rech¬ teckigem Querschnitt und abgerundeten Kanten bekannt, das au¬ ßerdem auf beiden breiten Seiten mit einer Beschichtung versehen ist, deren eine gut lötbar und die andere gut bondbar ist .
Auch die DE 10 2006 025 870 AI offenbart ein mehrschichtiges Bondbändchen, dessen Kern eine hohe Stromtragfähigkeit auf¬ weist, während die Außenschichten gut bondbar sind. Such a bond connection is known from DE 10 2006 025 868 AI. There are called bonding wires with arbitrary Querschnittsflä ¬ chen, which may therefore be round, oval, square, rectangular, star-shaped or wavy or provided with notches. From DE 10 2006 060 899 Al, a bonding tape with a computationally ¬ teckigem cross section and rounded edges is known, which is provided on both broad sides with a coating au ¬ ßerdem whose the other is well bondable a good solderability and. Also, DE 10 2006 025 870 Al discloses a multilayer bonding tapes whose core has a high current-carrying capacity on ¬, while the outer layers are well bondable.
Schließlich ist es aus der DE 10 2006 025 867 AI bekannt, zwei Bondbändchen übereinander anzuordnen, um einen höheren Stromfluss zu ermöglichen. Um für nebeneinander, übereinander oder überkreuzende Bondverbindungen die Kurzschlussgefahr untereinander oder zu benachbarten Verbindungen anderen Potentiales auszuschließen, müssen ausreichend Sicherheitsabstände beachtet werden. Diese Sicherheitsabstände müssen auch die verfahrenstechnisch not- wendigen Schwankungen in der Position der Drähte und der Loophöhe berücksichtigen. Dadurch bedingt ergeben sich ein hoher Platzbedarf und konstruktive Einschränkungen bei der Konzeption von neuen Produkten. Der Erfindung liegt die Aufgabe zugrunde, eine elektrisch leitende Verbindung mittels eines als Bändchen ausgebildeten Bonddrahtes herzustellen, die einerseits geringe Abstände mehrerer Bonddrähte bei unterschiedlichen elektrischen Potentialen ermöglicht, einen minimierten Platzbedarf hat und hohe Sicherheit bei Temperaturwechselbeanspruchung und bei Vibrationsbelastung bietet. Finally, it is known from DE 10 2006 025 867 AI to arrange two bond ribbons on top of each other to allow a higher current flow. In order to rule out the danger of short circuits with each other or with adjacent connections of other potential for side by side, on top of each other or crossing connections, sufficient safety distances must be observed. These safety distances must also take into account the procedurally necessary fluctuations in the position of the wires and the loop height. This results in a high space requirement and constructive limitations in the design of new products. The invention has for its object to produce an electrically conductive connection by means of a trained as a ribbon bonding wire, on the one hand allows small distances of several bonding wires at different electrical potentials, has a minimal footprint and high safety at thermal cycling and vibration exposure offers.
Die Aufgabe wird gelöst durch einen als Bändchen ausgebilde¬ ten Bonddraht, bei dem einseitig auf das metallische Band ei- ne Isolierschicht aufgebracht ist. In vorteilhafter Weise kann das metallische Band mit zumindest zwei Schichten aus unterschiedlichen Metallen gebildet sein, wobei die der Isolierschicht abgewandte äußere Seite eine gute Bondbarkeit aufweist .
Diese Isolierschicht kann in Form einer aufgeklebten und/oder aufgewalzten elektrisch isolierenden Folie aufgebracht werden. Im Prinzip wirkt das wie selbstklebendes Isolierband. Alternativ kann die Isolierschicht durch einen Sprühvorgang aufgebracht werden. Ebenso kann die Isolierschicht in flüssi¬ gem Zustand im Durchlauf- oder Abrollverfahren hergestellt werden . Die Isolierschicht beeinflusst die Bondbarkeit nur marginal. Ggf. muss die Bondvorrichtung zyklisch gereinigt werden, da der Bondkopf bei jedem Bondvorgang die Isolierschicht durch¬ stoßen muss. Beim Aufsetzen eines elektrisch leitenden Deckels auf ein eine Schaltung mit Bondverbindungen aufweisendes Gehäuse oder einer zweiten Leiterplatte (Schaltungsträger) brauchen nur noch geringe Abstände beachtet werden, da die Isolierschicht einen Kurzschluss verhindert. The object is solved by a of a ribbon having formed ¬ th bonding wire in which one side egg on the metal strip ne insulating layer is applied. Advantageously, the metallic strip may be formed with at least two layers of different metals, wherein the insulating layer facing away from the outer side has a good bondability. This insulating layer can be applied in the form of a glued and / or rolled-up electrically insulating film. In principle, it works like a self-adhesive insulating tape. Alternatively, the insulating layer may be applied by a spraying process. Likewise, the insulating layer can be produced in accordance flüssi ¬ state in continuous or roll-off. The insulating layer only marginally affects the bondability. Possibly. the bonding device needs to be cleaned periodically, since the bonding head must push the insulating layer by ¬ at each bonding process. When placing an electrically conductive cover on a circuit with bonding connections exhibiting housing or a second circuit board (circuit board) only small distances must be observed, since the insulating layer prevents short circuit.
Bei sich überkreuzenden oder in mehreren Ebenen übereinanderliegenden Bonddrähten wird die Kurzschlussgefahr signifikant reduziert . Die Erfindung wird nachfolgend anhand von Ausführungsbeispie¬ len mit Hilfe von Figuren näher beschrieben. Dabei zeigen In cross-over or in several levels superposed bonding wires, the risk of short circuit is significantly reduced. The invention will be described in more detail by means of Ausführungsbeispie ¬ len with the aid of figures. Show
Figur 1 einen Längsschnitt durch ein erstes Ausführungsbei¬ spiel eines erfindungsgemäßen Bonddrahts; Figure 1 shows a longitudinal section through a first Ausführungsbei ¬ game of a bonding wire according to the invention;
Figur 2 ein zweites Ausführungsbeispiel eines erfindungsge¬ mäßen Bonddrahts;
Figur 3 ein drittes Ausführungsbeispiel eines erfindungsge- mäßen Bonddrahts; Figure 2 shows a second embodiment of a erfindungsge ¬ MAESSEN bonding wire; FIG. 3 shows a third exemplary embodiment of a bonding wire according to the invention;
Figur 4 einen an Kontaktflächen gebondeten Bonddraht be- nachbart zu einem elektrischen leitenden Körper und FIG. 4 shows a bonding wire bonded to contact surfaces adjacent to an electrically conductive body and FIG
Figur 5 zwei sich überkreuzende Bonddrähte. Figure 5 shows two crossing bonding wires.
Figur 1 zeigt ein erstes Ausführungsbeispiel eines erfin- dungsgemäßen als Bändchen ausgebildeten Bonddrahtes, der mit nur einem metallischen Material 1 gebildet ist, das bei¬ spielsweise Aluminium oder auch Kupfer oder Gold sein kann oder aus jedem anderen Material bestehen kann, wie es beispielsweise in der DE 2006 060 899 AI beschrieben ist. Auf dem metallischen Material 1 ist eine dünne isolierende Figure 1 shows a first embodiment of an inventive designed as a ribbon bonding wire, which is formed with only a metallic material 1, which may be ¬ example, aluminum or copper or gold or may consist of any other material, as for example in the DE 2006 060 899 AI is described. On the metallic material 1 is a thin insulating
Schicht 2 aufgebracht, die, wie aus Figur 4 hervorgeht, einen elektrischen Kontakt mit einem benachbarten elektrisch leitenden Körper 8 vermeiden soll. Gemäß Figur 2 kann das Kernmaterial des Bondbändchens aus ei¬ nem metallischen Material 3 beispielsweise Kupfer, das eine hohe Stromtragfähigkeit aufweist, bestehen. Auf einer Seite ist dieser Kupferkern mit einer gut bondbaren Beschichtung beispielsweise aus Aluminium 4 versehen und auf der dieser Beschichtung abgewandten Seite des Kupferbandes mit der erfindungsgemäßen Isolierschicht 2. Layer 2 is applied, which, as is apparent from Figure 4, to avoid electrical contact with an adjacent electrically conductive body 8. According to Figure 2 the core material of the bonding ribbon from egg ¬ nem metallic material 3, for example copper, which has a high current-carrying capacity can be composed. On one side of this copper core is provided with a well bondable coating, for example made of aluminum 4 and on the side facing away from this coating of the copper strip with the insulating layer 2 of the invention.
Gemäß Figur 3 können auch mehrschichtige Bondbändchen verwendet werden, bei denen beispielsweise beide breitseitigen Oberflächen des Kupferbändchens mit einer Aluminiumbeschich- tung 4, 5 versehen sind, wobei dann eine dieser Aluminiumbe- schichtungen 4 oder 5 mit der erfindungsgemäßen Isolierschicht 2 bedeckt ist.
Wie bereits dargelegt wurde führt die erfindungsgemäße Iso¬ lierschicht bei einem auf Kontaktflächen 6, 7 gebondeten erfindungsgemäßen Bondbändchen, das in einem Loop geführt ist, dazu, dass ein elektrischer Kontakt zu einem benachbarten elektrisch leitenden Körper 8 vermieden wird. According to FIG. 3, it is also possible to use multilayer bonding tapes in which, for example, both broad-side surfaces of the copper strip are provided with an aluminum coating 4, 5, one of these aluminum coatings 4 or 5 then being covered by the insulating layer 2 according to the invention. As already stated, the invention Iso ¬ lierschicht results in a bonded on contact faces 6, 7 according to the invention bond ribbon, which is guided in a loop, in addition, that an electrical contact to an adjacent electrically conductive body 8 is avoided.
Ein solcher elektrisch leitender Körper kann beispielsweise ein über das erste Bändchen kreuzendes zweites Bändchen 8 sein, wie es in Figur 5 dargstellt ist.
Such an electrically conductive body can be, for example, a second ribbon 8 crossing over the first ribbon, as shown in FIG.
Claims
1. Als Bändchen ausgebildeter Bonddraht 1. Ribbon-shaped bonding wire
gekennzeichnet durch marked by
eine einseitig auf das metallische Band (1) aufgebrachte Isolierschicht (2) . a one-sided on the metallic strip (1) applied insulating layer (2).
2. Bonddraht nach Anspruch 1, dadurch gekennzeichnet, dass das metallische Band (1) mit zumindest zwei Schichten (3, 4; 3, 4, 5) aus unterschiedlichen Metallen gebildet ist. 2. Bonding wire according to claim 1, characterized in that the metallic strip (1) with at least two layers (3, 4; 3, 4, 5) is formed of different metals.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010030956A DE102010030956A1 (en) | 2010-07-05 | 2010-07-05 | Bonding tape with insulating layer |
DE102010030956.7 | 2010-07-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012004104A1 true WO2012004104A1 (en) | 2012-01-12 |
Family
ID=44260808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/060028 WO2012004104A1 (en) | 2010-07-05 | 2011-06-16 | Bond strips |
Country Status (2)
Country | Link |
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DE (1) | DE102010030956A1 (en) |
WO (1) | WO2012004104A1 (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5097100A (en) * | 1991-01-25 | 1992-03-17 | Sundstrand Data Control, Inc. | Noble metal plated wire and terminal assembly, and method of making the same |
US5139192A (en) * | 1990-08-30 | 1992-08-18 | Quantum Magnetics, Inc. | Superconducting bonds for thin film devices |
US20040217488A1 (en) * | 2003-05-02 | 2004-11-04 | Luechinger Christoph B. | Ribbon bonding |
DE102006025868A1 (en) | 2006-06-02 | 2007-12-06 | Robert Bosch Gmbh | Contact wire for contacting two contact surfaces, has contour of cross-sectional surface of contact wire, which has form deviating from circular shape and square shape with two different long sides |
DE102006025867A1 (en) | 2006-06-02 | 2007-12-06 | Robert Bosch Gmbh | Bond connection for contact surfaces in e.g. integrated circuit, has bond wires that are arranged one upon other and connected with each other, where one of the bond wires is broader and/or thinner than other bond wire |
DE102006025870A1 (en) | 2006-06-02 | 2007-12-06 | Robert Bosch Gmbh | Bonding wire for connecting pad and pin of chip, has outer and inner layers, where inner layer has high conductivity, low bending stiffness, low breaking load and low tensile strength than that of outer layers and wire is designed as tape |
US20080124547A1 (en) * | 2006-11-28 | 2008-05-29 | Samsung Electronics Co., Ltd. | Partially insulation coated metal wire for wire bonding and wire bonding method for semiconductor package using the same |
DE102006060899A1 (en) | 2006-12-20 | 2008-07-10 | Micro-Systems-Engineering Gmbh & Co. Kg | Lead wire, method of making such and assembly |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004016197A1 (en) * | 2004-04-01 | 2005-10-20 | Abb Technology Ag Zuerich | Winding for a transformer or coil and method of manufacture |
-
2010
- 2010-07-05 DE DE102010030956A patent/DE102010030956A1/en not_active Ceased
-
2011
- 2011-06-16 WO PCT/EP2011/060028 patent/WO2012004104A1/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5139192A (en) * | 1990-08-30 | 1992-08-18 | Quantum Magnetics, Inc. | Superconducting bonds for thin film devices |
US5097100A (en) * | 1991-01-25 | 1992-03-17 | Sundstrand Data Control, Inc. | Noble metal plated wire and terminal assembly, and method of making the same |
US20040217488A1 (en) * | 2003-05-02 | 2004-11-04 | Luechinger Christoph B. | Ribbon bonding |
DE102006025868A1 (en) | 2006-06-02 | 2007-12-06 | Robert Bosch Gmbh | Contact wire for contacting two contact surfaces, has contour of cross-sectional surface of contact wire, which has form deviating from circular shape and square shape with two different long sides |
DE102006025867A1 (en) | 2006-06-02 | 2007-12-06 | Robert Bosch Gmbh | Bond connection for contact surfaces in e.g. integrated circuit, has bond wires that are arranged one upon other and connected with each other, where one of the bond wires is broader and/or thinner than other bond wire |
DE102006025870A1 (en) | 2006-06-02 | 2007-12-06 | Robert Bosch Gmbh | Bonding wire for connecting pad and pin of chip, has outer and inner layers, where inner layer has high conductivity, low bending stiffness, low breaking load and low tensile strength than that of outer layers and wire is designed as tape |
US20080124547A1 (en) * | 2006-11-28 | 2008-05-29 | Samsung Electronics Co., Ltd. | Partially insulation coated metal wire for wire bonding and wire bonding method for semiconductor package using the same |
DE102006060899A1 (en) | 2006-12-20 | 2008-07-10 | Micro-Systems-Engineering Gmbh & Co. Kg | Lead wire, method of making such and assembly |
Also Published As
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DE102010030956A1 (en) | 2012-01-05 |
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