WO2012002666A3 - Graphene manufacturing apparatus and method - Google Patents

Graphene manufacturing apparatus and method Download PDF

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Publication number
WO2012002666A3
WO2012002666A3 PCT/KR2011/004524 KR2011004524W WO2012002666A3 WO 2012002666 A3 WO2012002666 A3 WO 2012002666A3 KR 2011004524 W KR2011004524 W KR 2011004524W WO 2012002666 A3 WO2012002666 A3 WO 2012002666A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
deposition chamber
manufacturing apparatus
temperature
heating unit
Prior art date
Application number
PCT/KR2011/004524
Other languages
French (fr)
Other versions
WO2012002666A2 (en
Inventor
Dong-Kwan Won
Seung-Min Cho
Original Assignee
Samsung Techwin Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110026455A external-priority patent/KR101828528B1/en
Application filed by Samsung Techwin Co., Ltd. filed Critical Samsung Techwin Co., Ltd.
Priority to CN201180032694.1A priority Critical patent/CN102958832B/en
Priority to US13/807,360 priority patent/US20130122220A1/en
Publication of WO2012002666A2 publication Critical patent/WO2012002666A2/en
Publication of WO2012002666A3 publication Critical patent/WO2012002666A3/en
Priority to US14/831,031 priority patent/US20150353362A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Abstract

A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.
PCT/KR2011/004524 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method WO2012002666A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180032694.1A CN102958832B (en) 2010-06-28 2011-06-22 Graphene manufacturing equipment and method
US13/807,360 US20130122220A1 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method
US14/831,031 US20150353362A1 (en) 2010-06-28 2015-08-20 Graphene manufacturing apparatus and method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100061274 2010-06-28
KR10-2010-0061274 2010-06-28
KR10-2011-0026455 2011-03-24
KR1020110026455A KR101828528B1 (en) 2010-06-28 2011-03-24 Manufacturing apparatus and method of graphene

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/807,360 A-371-Of-International US20130122220A1 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method
US14/831,031 Division US20150353362A1 (en) 2010-06-28 2015-08-20 Graphene manufacturing apparatus and method

Publications (2)

Publication Number Publication Date
WO2012002666A2 WO2012002666A2 (en) 2012-01-05
WO2012002666A3 true WO2012002666A3 (en) 2012-05-31

Family

ID=45402522

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/004524 WO2012002666A2 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method

Country Status (1)

Country Link
WO (1) WO2012002666A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102583340B (en) * 2012-01-20 2013-09-18 中国科学院上海硅酸盐研究所 High-conductivity graphene material with low-temperature gas-phase reduction and preparation method thereof
TWI457277B (en) 2012-08-10 2014-10-21 Nat Univ Tsing Hua A graphene manufacturing system and the method thereof
US9431487B2 (en) 2013-01-11 2016-08-30 International Business Machines Corporation Graphene layer transfer
US20220098042A1 (en) * 2019-03-18 2022-03-31 The 280 Company System and process for manufacturing a graphene layer on a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090068471A1 (en) * 2007-09-10 2009-03-12 Samsung Electronics Co., Ltd. Graphene sheet and process of preparing the same
US20090110627A1 (en) * 2007-10-29 2009-04-30 Samsung Electronics Co., Ltd. Graphene sheet and method of preparing the same
US20090155561A1 (en) * 2007-12-17 2009-06-18 Samsung Electronics Co., Ltd. Single crystalline graphene sheet and process of preparing the same
US20090324897A1 (en) * 2007-09-18 2009-12-31 Samsung Electronics Co., Ltd. Graphene pattern and process of preparing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090068471A1 (en) * 2007-09-10 2009-03-12 Samsung Electronics Co., Ltd. Graphene sheet and process of preparing the same
US20090324897A1 (en) * 2007-09-18 2009-12-31 Samsung Electronics Co., Ltd. Graphene pattern and process of preparing the same
US20090110627A1 (en) * 2007-10-29 2009-04-30 Samsung Electronics Co., Ltd. Graphene sheet and method of preparing the same
US20090155561A1 (en) * 2007-12-17 2009-06-18 Samsung Electronics Co., Ltd. Single crystalline graphene sheet and process of preparing the same

Also Published As

Publication number Publication date
WO2012002666A2 (en) 2012-01-05

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