WO2011163455A3 - Pre-clean chamber with reduced ion current - Google Patents

Pre-clean chamber with reduced ion current Download PDF

Info

Publication number
WO2011163455A3
WO2011163455A3 PCT/US2011/041592 US2011041592W WO2011163455A3 WO 2011163455 A3 WO2011163455 A3 WO 2011163455A3 US 2011041592 W US2011041592 W US 2011041592W WO 2011163455 A3 WO2011163455 A3 WO 2011163455A3
Authority
WO
WIPO (PCT)
Prior art keywords
volume
ion current
clean chamber
plasma
reduced ion
Prior art date
Application number
PCT/US2011/041592
Other languages
French (fr)
Other versions
WO2011163455A2 (en
Inventor
John C. Forster
Tae Hong Ha
Murali K. Narasimhan
Xinyu Fu
Arvind Sundarrajan
Xiaoxi Guo
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/166,213 external-priority patent/US20110315319A1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201180034795.2A priority Critical patent/CN103003926B/en
Priority to KR1020137001955A priority patent/KR20130093080A/en
Priority to JP2013516763A priority patent/JP2013532387A/en
Publication of WO2011163455A2 publication Critical patent/WO2011163455A2/en
Publication of WO2011163455A3 publication Critical patent/WO2011163455A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit.
PCT/US2011/041592 2010-06-25 2011-06-23 Pre-clean chamber with reduced ion current WO2011163455A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180034795.2A CN103003926B (en) 2010-06-25 2011-06-23 There is the pre-clean chamber of the ion current of minimizing
KR1020137001955A KR20130093080A (en) 2010-06-25 2011-06-23 Pre-clean chamber with reduced ion current
JP2013516763A JP2013532387A (en) 2010-06-25 2011-06-23 Pre-clean chamber with reduced ion current

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US35870110P 2010-06-25 2010-06-25
US61/358,701 2010-06-25
US13/166,213 US20110315319A1 (en) 2010-06-25 2011-06-22 Pre-clean chamber with reduced ion current
US13/166,213 2011-06-22

Publications (2)

Publication Number Publication Date
WO2011163455A2 WO2011163455A2 (en) 2011-12-29
WO2011163455A3 true WO2011163455A3 (en) 2012-05-31

Family

ID=45372101

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/041592 WO2011163455A2 (en) 2010-06-25 2011-06-23 Pre-clean chamber with reduced ion current

Country Status (4)

Country Link
JP (1) JP2013532387A (en)
KR (1) KR20130093080A (en)
CN (1) CN103003926B (en)
WO (1) WO2011163455A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104342632B (en) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 Pre-cleaning cavity and plasma processing device
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
TWI670756B (en) * 2014-12-22 2019-09-01 美商應用材料股份有限公司 Fcvd line bending resolution by deposition modulation
US10153139B2 (en) * 2015-06-17 2018-12-11 Applied Materials, Inc. Multiple electrode substrate support assembly and phase control system
JP2017157778A (en) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 Substrate processing device
US20170278679A1 (en) * 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
JP7240958B2 (en) * 2018-09-06 2023-03-16 東京エレクトロン株式会社 Plasma processing equipment
CN110349830B (en) 2019-09-09 2020-02-14 北京北方华创微电子装备有限公司 Plasma system and filtering device applied to plasma system
FI129609B (en) 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968275A (en) * 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
KR20040013170A (en) * 2002-08-01 2004-02-14 삼성전자주식회사 Ashing apparatus
US20070006972A1 (en) * 2005-07-08 2007-01-11 Applied Materials, Inc. Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
US20070113868A1 (en) * 2005-11-22 2007-05-24 Applied Materials,Inc. Apparatus and a method for cleaning a dielectric film
US20080017107A1 (en) * 2003-09-03 2008-01-24 Masatsugu Arai Plasma processing apparatus
US20090084502A1 (en) * 2007-09-28 2009-04-02 Tokyo Electron Limited Plasma processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635267B2 (en) * 1991-06-27 1997-07-30 アプライド マテリアルズ インコーポレイテッド RF plasma processing equipment
JP2625072B2 (en) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド Plasma reactor using electromagnetic RF coupling and method thereof
JPH08139070A (en) * 1994-11-04 1996-05-31 Hitachi Tokyo Electron Co Ltd Semiconductor manufacturing device
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
JP2007042951A (en) * 2005-08-04 2007-02-15 Tokyo Electron Ltd Plasma processing device
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968275A (en) * 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
KR20040013170A (en) * 2002-08-01 2004-02-14 삼성전자주식회사 Ashing apparatus
US20080017107A1 (en) * 2003-09-03 2008-01-24 Masatsugu Arai Plasma processing apparatus
US20070006972A1 (en) * 2005-07-08 2007-01-11 Applied Materials, Inc. Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
US20070113868A1 (en) * 2005-11-22 2007-05-24 Applied Materials,Inc. Apparatus and a method for cleaning a dielectric film
US20090084502A1 (en) * 2007-09-28 2009-04-02 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
CN103003926B (en) 2016-05-25
WO2011163455A2 (en) 2011-12-29
JP2013532387A (en) 2013-08-15
CN103003926A (en) 2013-03-27
KR20130093080A (en) 2013-08-21

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