WO2011152309A1 - Module de cellule solaire et son procédé de fabrication - Google Patents
Module de cellule solaire et son procédé de fabrication Download PDFInfo
- Publication number
- WO2011152309A1 WO2011152309A1 PCT/JP2011/062224 JP2011062224W WO2011152309A1 WO 2011152309 A1 WO2011152309 A1 WO 2011152309A1 JP 2011062224 W JP2011062224 W JP 2011062224W WO 2011152309 A1 WO2011152309 A1 WO 2011152309A1
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- Prior art keywords
- conductive
- solar cell
- electrode
- cell module
- main surface
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 claims abstract description 59
- 239000000853 adhesive Substances 0.000 claims abstract description 58
- 230000001070 adhesive effect Effects 0.000 claims abstract description 57
- 230000008018 melting Effects 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 229910020816 Sn Pb Inorganic materials 0.000 claims description 7
- 229910020922 Sn-Pb Inorganic materials 0.000 claims description 7
- 229910008783 Sn—Pb Inorganic materials 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 description 86
- 239000000758 substrate Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000009477 glass transition Effects 0.000 description 7
- 229910017944 Ag—Cu Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
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- 239000012790 adhesive layer Substances 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
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- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a solar cell module and a manufacturing method thereof.
- the solar cell module has a configuration in which the output is increased by electrically connecting a plurality of solar cells in series.
- the configuration of the solar cell module 100 will be described with reference to FIG.
- a plurality of solar cells 101 are electrically connected in series by a conductive connection member 102 to constitute a solar cell group 103.
- another adjacent solar cell group 103 is soldered by a connecting member 104.
- the output of the solar cell module 100 is increased by electrically connecting a plurality of solar cells 101 in series.
- the outermost solar cell group 103 is solder-connected to L-shaped connection members (output extraction connection members) 105 and 106 for extracting electric output from the solar cell module 100.
- the solar battery cell 101 needs to be electrically connected to the other solar battery cell 101 by the conductive connecting member 102.
- this point will be described in detail.
- the solar battery cell 101 includes a semiconductor substrate 107 having a pn junction, an antireflection film 108 and a surface side electrode 109 formed on the surface of the semiconductor substrate 107, and a back surface side electrode formed on the back surface of the semiconductor substrate 107. 110.
- the surface-side electrode 109 includes a finger-shaped current collecting electrode 109a and a bus bar electrode 109b orthogonal to the current collecting electrode 109a.
- the back side electrode 110 includes a metal film-like current collecting electrode 110a and a bus bar electrode 110b.
- the solar battery cell 101 is electrically connected to the other solar battery cells 101 by connecting the conductive connecting member 102 described above to the bus bar electrodes 109b and 110b.
- FIG. 9A is a cross-sectional view for explaining the connection between the solar battery cell and the conductive connecting member along AA ′ in FIG. 7, and FIG. 9B is a cross-sectional view along BB ′ in FIG. It is sectional drawing for demonstrating the connection of the photovoltaic cell in a solar cell module along with, and an electroconductive connection member.
- the conductive connection member 102 connects the bus bar electrode 109b of one solar battery cell 101 and the bus bar electrode 110b of another adjacent solar battery cell 101. Thereby, the adjacent photovoltaic cells 101 are electrically connected to each other.
- the bus bar electrode of the solar battery cell and the conductive connection member are connected by thermocompression bonding.
- the conductive connection member 102 includes a conductive member made of Cu or the like and a solder layer covering the conductive member.
- the soldering layer on the surface side of the conductive connecting member is in close contact with the pressure bonding head of the thermocompression bonding apparatus. If it does so, a nonuniform burr
- non-uniform burr can cause various unexpected problems. For example, in the laminating process during the solar cell module manufacturing process, non-uniform burrs pierce the filler present in the solar cell module, and stress concentrates on the non-uniform burrs.
- a conductive connection member in which a surface of a conductive member is covered with a conductive layer and a solar battery cell having an electrode on the surface are prepared, and the conductive connection is performed.
- An adhesive and solder are arranged between one main surface of the member and the electrode, and the conductive connecting member is thermocompression bonded to the electrode to melt the solder and cure the adhesive, thereby A step of connecting the conductive connecting member and the electrode, wherein the conductive connecting member has a melting point of the conductive layer at least on the other main surface facing the one main surface higher than a melting point of the solder. It is comprised,
- the said thermocompression bonding is performed at the temperature which does not exceed melting
- thermocompression bonding In the method for manufacturing a solar cell module according to the present invention, it is possible to melt the solder without melting the conductive layer by thermocompression bonding.
- the surface of the conductive member has a conductive connection member covered with a conductive layer, and a solar cell having an electrode on the surface, and one main surface of the conductive connection member And the electrode are connected via an adhesive member in which an adhesive is mixed in the solder, and the conductive layer has a melting point higher than that of the solder at least on the other main surface facing the one main surface.
- the solar cell module it is possible to melt the solder and connect the solar cell and the conductive connecting member without melting the conductive layer.
- the occurrence of uneven burrs on the surface side of the conductive connecting member is suppressed.
- FIG.1 (a) shows the surface view of a photovoltaic cell
- FIG.1 (b) shows the back view of a photovoltaic cell
- FIG. 2 is a cross-sectional view taken along the line A-A ′ of FIG. 3A is a plan view showing a state in which two solar cells are connected
- FIG. 3B is a cross-sectional view taken along the line AA ′ in FIG. Before and after the connection process.
- FIG. 4 is a cross-sectional view taken along the line A-A ′ of FIG. 3A, in which the connection portion between the conductive connection member and the bus bar electrode is enlarged.
- the top view of the adhesion member when peeling a conductive connection member from the photovoltaic cell in Drawing 3 (a) is shown.
- connection location of the electroconductive connection member and bus-bar electrode of the surface side of the photovoltaic cell which concerns on another embodiment of this invention is expanded. It is a top view for demonstrating the conventional solar cell module. It is a perspective view of the photovoltaic cell in the conventional solar cell module.
- FIG. 9A is a cross-sectional view for explaining the connection between the solar battery cell and the conductive connection member
- FIG. 9B shows the connection between the solar battery cell and the conductive connection member in the conventional solar battery module. It is sectional drawing for demonstrating a connection.
- FIG. 1A shows a front view of the solar battery cell 5
- FIG. 1B shows a back view of the solar battery cell 5.
- the solar cell 5 has an antireflection film 18 and a surface side electrode 22 in this order.
- the surface side electrode 22 includes a plurality of finger electrodes 22a and two bus bar electrodes 22b.
- the plurality of finger electrodes 22 a are formed so as to cover the entire surface of the solar battery cell 5.
- Each finger electrode 22a has a narrow linear shape and is arranged in parallel to each other.
- the finger electrodes 22a have a thin line shape having a thickness of 10 to 30 ⁇ m and a width of 50 to 200 ⁇ m, and are arranged at intervals of 2 mm.
- the bus bar electrode 22b is configured to be orthogonally connected to the finger electrode 22a on the surface of the solar battery cell 5.
- the bus bar electrode 22b is formed to have a linear shape with a thickness of 10 to 30 ⁇ m and a width of 0.1 to 1.8 mm.
- Such a surface-side electrode 22 is formed by printing and baking a silver paste in a predetermined pattern by a screen printing method.
- the solar cell 5 has a back surface side electrode 23 on the back surface side.
- the back surface side electrode 23 is composed of a metal film electrode 23a and two bus bar electrodes 23b.
- the metal film electrode 23a is formed by printing and baking a paste containing aluminum on substantially the entire back surface of the solar battery cell 5 by screen printing.
- the bus bar electrode 23 b is formed on the metal film electrode 23 a on the back surface of the solar battery cell 5.
- the bus bar electrode 23b is formed to have a linear shape with a thickness of 10 to 30 ⁇ m and a width of 0.1 to 1.8 mm.
- FIG. 2 is a cross-sectional view taken along line A-A ′ of FIG.
- the solar cell 5 includes a p-type polycrystalline silicon substrate 15, an n-type diffusion layer 16 formed on the surface side of the substrate 15, an antireflection film 18, finger electrodes 22a (not shown), and bus bar electrodes 22b. And a solder layer 22c, a back surface electrode 23 composed of a metal film electrode 23a and a bus bar electrode 23b, and a solder layer 23c.
- the p-type polycrystalline silicon substrate 15 has, for example, a substantially square planar shape of about 125 mm square and a thickness of 100 ⁇ m to 300 ⁇ m. Although not shown here, the substrate 15 has a textured surface described below on the surface side.
- the solar cell 5 On the surface side, the solar cell 5 has an n-type diffusion layer 16, an antireflection film 18 and a surface-side electrode 22 on the surface of the p-type polycrystalline silicon substrate 15 having the texture structure.
- the n-type diffusion layer 16 is formed by thermally diffusing phosphorus on the surface side of the substrate 15.
- an antireflection film 18 is formed on substantially the entire surface except for a part, and a surface side electrode 22 is formed in a region where the antireflection film 18 is not formed.
- the bus bar electrode 22b is formed with a Sn—Pb solder layer 22c having a thickness of 5 to 50 ⁇ m so as to cover the surface thereof. Moreover, although not shown in figure, the solder layer 22c is coat
- the solar battery cell 5 has the metal film electrode 23a and the bus bar electrode 23b on the back surface having the texture structure of the p-type polycrystalline silicon substrate 15.
- a Sn—Pb solder layer 23c having a thickness of about 5 to 50 ⁇ m is also formed on the bus bar electrode 23b so as to cover the surface thereof.
- FIG. 3A is a plan view of a state in which two solar cells 5 are connected
- FIG. 3B is a cross-sectional view taken along the line AA ′ in FIG. The front and back of a connection process with the bus-bar electrode 22b are shown.
- the conductive connection member 6 is connected to the bus bar electrode 22b on the surface side of one solar battery cell 5 by an adhesive 24 containing a resin.
- the conductive connecting member 6 is connected to the bus bar electrode 23b on the back side of the other solar cell 5 adjacent to the one solar cell 5 via the adhesive 24.
- the adhesive 24 is an epoxy thermosetting adhesive, has a glass transition temperature of about 130 ° C., and is cured when thermocompression bonded at about 200 ° C. or higher for 20 seconds or longer.
- the adhesive may be applied and formed on the bus bar electrodes 22b and 23b or the conductive connection member 6, or may be in the form of a film.
- FIG. 3B the upper diagram shows the process steps before the connection between the bus bar electrode 22b and the adhesive 24, and the lower diagram shows the process steps after the connection between the bus bar electrode 22b and the adhesive 24.
- the conductive connecting member 6 is composed of a flat copper electric wire 6a and a first conductive layer 6b and a second conductive layer 6c as conductive layers. Yes.
- the flat copper wire 6a is a flat copper wire having a width of 0.5 mm to 2 mm and a thickness of about 100 to 300 ⁇ m.
- the first conductive layer 6b is coated by, for example, a plating method so that Sn—Ag—Cu having a thickness of 5 to 50 ⁇ m surrounds the back side, which is one main surface of the flat copper wire 6a.
- the second conductive layer 6c is coated by, for example, plating so that Ag having a thickness of 5 to 50 ⁇ m surrounds the surface side that is the other main surface of the flat copper wire 6a.
- the melting point of the first conductive layer 6b is about 220 ° C.
- the melting point of the second conductive layer 6c is about 962 ° C.
- the second conductive layer 6 c is configured to have a higher melting point than the solder layer 22 c, and the solder layer 22 c is configured to be higher than the glass transition temperature of the adhesive 24.
- the adhesive 24 is disposed between the conductive connection member 6 and the bus bar electrode 22b, for example, on the bus bar electrode 22b.
- the conductive connection member 6 is interposed via the adhesive 24.
- the conductive connecting member 6 is heated and pressed at about 200 ° C. for 20 seconds while being pressed against the bus bar electrode 22b at about 2 MPa.
- the adhesive 24 may be provided on the conductive connection member 6 in advance instead of being disposed on the bus bar electrode 22b.
- the electroconductive connection member 6 is thermocompression bonded at approximately 200 ° C. to the substantially entire surface of the electroconductive connection member 6 in the longitudinal direction by a thermocompression bonding portion of a thermocompression bonding apparatus (not shown).
- a thermocompression bonding portion of a thermocompression bonding apparatus not shown.
- the surface side of the conductive connecting member 6 is covered with a second conductive layer 6c having a higher melting point than the solder layer 22c. If it does so, since it can thermocompression-bond at the temperature which exceeds melting
- FIG. 4 is a cross-sectional view taken along the line A-A ′ of FIG. 3A, in which the connection portion between the conductive connection member 6 and the bus bar electrode 22 b is enlarged.
- the solder layer 22c has irregular micron-order micro-projections 22d on the surface of the solder layer 22c, and melts with the first conductive layer 6b in the central portion of the conductive connecting member 6 in the short direction.
- the minute convex portion 22d is formed with an average thickness of about 2 ⁇ m to 3 ⁇ m.
- solder layer 22c contains a metal material, it is easy to melt with the first conductive layer 6b. For this reason, the solder layer 22 c is firmly connected to the conductive connection member 6.
- the adhesive 24 enters the minute convex portion 22d and is cured. Thereby, the contact area between the conductive connecting member 6 and the adhesive 24 is increased, and the adhesive strength between the conductive connecting member 6 and the adhesive 24 is further improved.
- the adhesive 24 is thermocompression bonded and flows at a temperature exceeding its glass transition temperature. For this reason, the adhesive 24 is distributed beyond the width of the conductive connecting member 6 in the short direction. Then, the adhesive 24 forms a fillet on the lateral side surface of the conductive connecting member 6 and is cured. Thereby, even if the solder layer 22c is melted in the thermocompression bonding process, the component is prevented from flowing out beyond the width of the bus bar electrode 22b in the short direction due to the adhesive 24 as a barrier. The adhesive 24 is in close contact with the conductive connection member 6 and the antireflection film 18 beyond the width of the bus bar electrode 22b in the short direction.
- the contact area of the conductive connecting member 6 and the antireflection film 18 and the adhesive 24 increases.
- the adhesive strength between the conductive connecting member 6 and the bus bar electrode 22b is improved by the fillet formed by curing the adhesive 24 to the conductive connecting member 6.
- FIG. 5 shows a top view of the adhesive member when the conductive connection member 6 is peeled from the solar battery cell 5 in FIG.
- thermosetting resin 24a formed by curing the adhesive 24 is unevenly distributed in a random and random manner in size and shape in the solder layer 22c melted and solidified in the vicinity of the center in the short direction of the conductive connecting member 6. Yes.
- the adhesive resin 24a mixed in the solder layer 22c melted and solidified with the conductive connecting member 6 exists in the vicinity of the center of the conductive connecting member 6 in the short direction, and thus the conductive resin becomes conductive.
- the adhesive strength between the connecting member 6 and the bus bar electrode 22b is further improved.
- the solar cell 5 is electrically connected to another solar cell 5 through the conductive connection member 6. Then, a solar cell module as shown in FIG. 7 is completed through a known modularization process.
- the conductive layer is conductive at a temperature higher than the melting point of the solder layer 22c and the glass transition temperature of the adhesive 24 and not exceeding the melting point of the second conductive layer 6c.
- the connecting member 6 is thermocompression bonded to the adhesive 24 on the bus bar electrode 22b.
- the second conductive layer 6c does not melt and the solder layer 22c melts.
- the generation of burrs on the surface side of the conductive connection member 6 can be suppressed.
- Ag which is a highly reflective metal, is used as the second conductive layer 6c on the surface side of the conductive connection member 6 serving as the light receiving surface, so that the reflectance with respect to light incidence is increased. If it does so, it is possible to improve the output of the solar cell module 1 using reflected light.
- the minute protrusion 22d is formed based on the melting of the solder layer 22c by thermocompression bonding.
- the minute projections 22d contribute to an increase in the adhesion area with the adhesive 24, and contribute to an increase in the adhesion strength between the conductive connection member 6 and the bus bar electrode 22b.
- the adhesive 24 is distributed in the conductive connecting member 6 and the melted solder layer 22c, and the adhesive 24 enters the solder layer 22c and is mixed. Then, the adhesive 24 enters and mixes in the solder layer 22c, thereby further contributing to an increase in the adhesive strength between the conductive connection member 6 and the bus bar electrode 22b.
- the above description is mainly about the connection between the bus bar electrode 22 b on the surface side of the solar battery cell 5 and the conductive connection member 6, but the first conductive also in the connection between the bus bar electrode 23 b and the conductive connection member 6.
- the conductive layer 6b has a melting point higher than that of the solder layer 22c, and the solder layer 22c is configured to be higher than the glass transition temperature of the adhesive 24. Similar effects can be obtained by making the same connection also on the bus bar electrode 23b on the back surface side. Play.
- the flat copper wire 6a is configured to have the first conductive layer 6b made of Sn—Ag—Cu and the second conductive layer 6c made of Ag.
- a conductive layer made of Sn—Ag—Cu may be provided so as to cover the side surface in the longitudinal direction, and a conductive layer made of Ag may be provided on the conductive layer on the front surface or the back surface.
- each of the conductive layers has a melting point higher than that of the solder layer 22 c, and the solder layer 22 c is configured to be higher than the glass transition temperature of the adhesive 24.
- FIG. 6 is an enlarged view of the surface side of the connection portion between the conductive connection member and the bus bar electrode of another embodiment.
- This embodiment is not the structure of 1st Embodiment coat
- the front surface, the back surface, and the side surfaces in the longitudinal direction are covered with a conductive layer 60b made of the same material made of Sn—Ag—Cu, which is a lead-free solder having a thickness of 5 to 50 ⁇ m, for example, by plating.
- the same number is attached
- the conductive layer 60b has a melting point higher than that of the solder layer 22c, and the solder layer 22c is configured to be higher than the glass transition temperature of the adhesive 24, and has the same effect as in the first embodiment.
- Example 2 is for making an understanding of this invention easy, and is not for limiting and interpreting this invention.
- the present invention can be changed and improved without departing from the gist thereof, and the present invention includes equivalents thereof.
- the conductive layer of Sn—Pb alloy is used as the solder layers 22 c and 23 c for the front surface side electrode 22 and the back surface side electrode 23, and the first conductive layer 6 b is disposed on the back surface side of the conductive connection member 6.
- Sn—Ag—Cu alloy was used as the second conductive layer 6c, and Ag was used as the second conductive layer 6c on the surface side.
- the present invention is not limited to this.
- various conductive layers such as Sn—Ag—In alloy and Sn—Pb alloy can be used as the solder layers 22c and 23c of the front surface side electrode 22 and the back surface side electrode 23.
- Various conductive materials such as Pb—Au alloy, lead-free solder, Au—Si alloy, Au—Ge alloy, Au—Sn alloy, Sn—Cu alloy, Sn—Ag alloy, Sn—Au alloy are provided on the side. Can be used. Of course, the same type of conductive material may be used for the back surface side and the front surface side of the conductive connection member 6, and the conductive material may be covered only on the front surface side of the conductive connection member 6.
- the conductive connection member 6 may include, for example, predetermined regular irregularities on the surface side of the flat copper wire 6a.
- the melting / solidification of the solder layer 22 c covered with the bus bar electrode 22 b is used.
- the bus bar electrode 22 b is covered with the solder layer 22 c.
- the same effect can be obtained by applying solder to the bus bar electrode 22b.
- melts and solidifies may be sufficient.
- an insulating adhesive may be used, or a conductive adhesive may be used.
- the resin is not limited to an epoxy thermosetting resin, and other thermosetting resins can be used as appropriate.
- the adhesive 24 made of the resin may contain conductive particles such as Ni and Ag, and may contain non-conductive materials such as non-conductive particles such as silica, both of which are included. These may be included, or both of them may not be included.
- the present invention is not limited to the structure of the solar cell shown in FIG. 2, and can be appropriately used for various solar cells such as a HIT (Heterojunction with “Intrinsic” Thin-layer) solar cell and a single crystal solar cell.
- HIT Heterojunction with “Intrinsic” Thin-layer
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Abstract
La présente invention a trait à un procédé de fabrication d'un module de cellule solaire, qui inclut une étape consistant à préparer un élément de connexion conducteur (6) recouvrant la surface d'un élément conducteur (6a) de couches conductrices (6b, 6c) et une cellule solaire (5) dotée d'une électrode (22b) sur la surface, à disposer un adhésif (24) et une brasure tendre (22c) entre une surface principale de l'élément de connexion conducteur (6) et l'électrode (22b), à lier l'élément de connexion conducteur (6) à l'électrode (22b) par thermocompression, et à connecter ensemble l'élément de connexion conducteur (6) et l'électrode (22b) en faisant fondre la brasure tendre (22c) et en durcissant l'adhésif (24). L'élément de connexion conducteur (6) est configuré de manière à ce que le point de fusion de la couche conductrice (6c) sur l'autre surface principale qui fait face au moins à ladite surface principale soit supérieur au point de fusion de la brasure tendre (22c) et de manière à ce que la liaison par thermocompression soit effectuée à une température n'excédant pas le point de fusion de la couche conductrice (6c) sur l'autre surface principale.
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012141073A1 (fr) * | 2011-04-11 | 2012-10-18 | 三菱電機株式会社 | Module cellule solaire et procédé de fabrication associé |
JP2013152979A (ja) * | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | 太陽電池モジュール及びその製造方法 |
JP2013183114A (ja) * | 2012-03-05 | 2013-09-12 | Sharp Corp | 太陽電池の製造方法、製造装置及び太陽電池 |
WO2014132282A1 (fr) * | 2013-02-26 | 2014-09-04 | 三洋電機株式会社 | Module de pile solaire |
EP2624310A4 (fr) * | 2010-09-29 | 2015-06-17 | Hitachi Chemical Co Ltd | Module à cellule solaire |
US9484479B2 (en) | 2011-11-09 | 2016-11-01 | Mitsubishi Electric Corporation | Solar cell module and manufacturing method thereof |
US20170104124A1 (en) * | 2015-10-12 | 2017-04-13 | Lg Electronics Inc. | Apparatus and method for attaching interconnector of solar cell panel |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005317904A (ja) * | 2003-11-27 | 2005-11-10 | Kyocera Corp | 太陽電池モジュール |
JP2009054981A (ja) * | 2007-08-02 | 2009-03-12 | Sanyo Electric Co Ltd | 太陽電池モジュール及びその製造方法 |
-
2011
- 2011-05-27 WO PCT/JP2011/062224 patent/WO2011152309A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005317904A (ja) * | 2003-11-27 | 2005-11-10 | Kyocera Corp | 太陽電池モジュール |
JP2009054981A (ja) * | 2007-08-02 | 2009-03-12 | Sanyo Electric Co Ltd | 太陽電池モジュール及びその製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2624310A4 (fr) * | 2010-09-29 | 2015-06-17 | Hitachi Chemical Co Ltd | Module à cellule solaire |
WO2012141073A1 (fr) * | 2011-04-11 | 2012-10-18 | 三菱電機株式会社 | Module cellule solaire et procédé de fabrication associé |
US9484479B2 (en) | 2011-11-09 | 2016-11-01 | Mitsubishi Electric Corporation | Solar cell module and manufacturing method thereof |
JP2013152979A (ja) * | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | 太陽電池モジュール及びその製造方法 |
JP2013183114A (ja) * | 2012-03-05 | 2013-09-12 | Sharp Corp | 太陽電池の製造方法、製造装置及び太陽電池 |
WO2014132282A1 (fr) * | 2013-02-26 | 2014-09-04 | 三洋電機株式会社 | Module de pile solaire |
JPWO2014132282A1 (ja) * | 2013-02-26 | 2017-02-02 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
US20170104124A1 (en) * | 2015-10-12 | 2017-04-13 | Lg Electronics Inc. | Apparatus and method for attaching interconnector of solar cell panel |
US10290761B2 (en) * | 2015-10-12 | 2019-05-14 | Lg Electronics Inc. | Apparatus and method for attaching interconnector of solar cell panel |
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