WO2011142191A1 - Terahertz wave detector, and process for production thereof - Google Patents
Terahertz wave detector, and process for production thereof Download PDFInfo
- Publication number
- WO2011142191A1 WO2011142191A1 PCT/JP2011/058453 JP2011058453W WO2011142191A1 WO 2011142191 A1 WO2011142191 A1 WO 2011142191A1 JP 2011058453 W JP2011058453 W JP 2011058453W WO 2011142191 A1 WO2011142191 A1 WO 2011142191A1
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- substrate
- film
- terahertz wave
- antenna body
- antenna
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title description 19
- 238000000034 method Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 239000002184 metal Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 238000007789 sealing Methods 0.000 description 18
- 238000001514 detection method Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0837—Microantennas, e.g. bow-tie
Definitions
- the present invention relates to a terahertz wave detector and a manufacturing method thereof.
- an antenna body that receives a terahertz wave and converts it into a current, a resistance film that generates heat according to the current converted by the antenna body, and a resistance film What is provided with the bolometer film
- membrane with which an electrical resistance value changes according to heat is known (for example, refer patent document 1).
- terahertz waves are detected based on a signal corresponding to the electric resistance value of the bolometer film.
- the insulating film, the resistance film, and the bolometer film are integrally formed via the insulating film, how the insulating film, the resistance film, and the bolometer film are thermally separated from the substrate or the antenna body. It is important whether it can be separated. Therefore, in the terahertz wave detector described in Patent Document 1, the insulating film, the resistance film, and the bolometer film are held on the substrate through the air gap by the conductive posts that connect the antenna body and the resistance film.
- an object of the present invention is to provide a terahertz wave detector that can detect terahertz waves with high accuracy, and a method of manufacturing such a terahertz wave detector.
- a terahertz wave detector for achieving the above object is formed on a first substrate and a second substrate, which are bonded to each other so as to form an internal space, and receives a terahertz wave to receive a current.
- the antenna body that converts to an internal space, the insulating film supported on the second substrate through the air gap in the internal space, and formed on one surface of the insulating film, generates heat according to the current converted by the antenna body
- a bolometer film formed on the other surface of the insulating film, the electric resistance value of which varies according to the heat generated in the resistance film, and formed on the second substrate, from the antenna body to the resistance film.
- the current converted by the antenna body is supplied to the resistance film via the antenna wiring.
- the antenna body is formed on the first substrate, whereas the antenna wiring is formed on the second substrate.
- the antenna wiring can be elongated to the same extent as the bolometer wiring, and as a result, the insulating film, the resistance film, and the bolometer film can be sufficiently separated from the substrate and the antenna body. Therefore, according to the terahertz wave detector, it is possible to detect the terahertz wave with high accuracy.
- the antenna wiring and the bolometer wiring may each include an electrically conductive columnar member that stands on the second substrate and supports the insulating film. According to this configuration, the insulating film, the resistance film, and the bolometer film can be reliably supported on the second substrate via the gap.
- the first substrate has a first convex portion that protrudes toward the second substrate side in the internal space, and the antenna body is formed on the first convex portion. It may extend and be electrically connected to the antenna wiring on the first convex portion.
- the second substrate has a second convex portion protruding toward the first substrate in the internal space, and the antenna wiring is on the second convex portion. It may extend and be electrically connected to the antenna body on the second convex portion.
- the antenna body and the antenna wiring may be electrically connected to each other via a bump in the internal space. According to these configurations, electrical connection between the antenna body on the first substrate side and the antenna wiring on the second substrate side can be reliably realized.
- the antenna body and the bolometer film are formed on the second substrate on the downstream side in the traveling direction of the terahertz wave.
- the first reflective film may be formed so as to face at least one of them.
- the antenna body and the bolometer film are formed on the first substrate on the downstream side in the traveling direction of the terahertz wave.
- a second reflective film may be formed so as to face at least one. According to these configurations, the terahertz wave reflected by the first reflecting film or the second reflecting film is incident on the antenna body or the bolometer film, so that the terahertz wave detection sensitivity can be improved.
- a method for manufacturing a terahertz wave detector includes an antenna body that receives a terahertz wave and converts it into a current, a resistance film that generates heat according to the current converted by the antenna body, and a heat generated in the resistance film.
- a terahertz wave detector comprising: a bolometer film whose electrical resistance value changes in response to the first and second substrates that are joined together to form an internal space.
- An electrically connected to the membrane A third step of forming on the second substrate a bolometer wiring electrically connected to the bolometer film in order to obtain a signal corresponding to the wiring and the electrical resistance value; and a second step and a third step And a fourth step of joining the first substrate and the second substrate so as to form an internal space and electrically connecting the antenna body and the antenna wiring.
- the antenna body is formed on the first substrate, while the insulating film, the resistance film, and the bolometer film are supported on the second substrate via the air gap, and the antenna wiring and the bolometer Wiring is formed on the second substrate. Accordingly, an antenna body having a shape suitable for the detection wavelength can be formed on the first substrate regardless of the step of forming the insulating film, the resistance film, and the bolometer film on the second substrate. Moreover, for example, antenna wiring that is as long as the bolometer wiring can be formed on the second substrate. Therefore, according to this method for manufacturing a terahertz wave detector, it is possible to manufacture a terahertz wave detector that can detect terahertz waves with high accuracy. Note that the second step and the third step are out of order.
- a terahertz wave detector capable of accurately detecting a terahertz wave and a method for manufacturing such a terahertz wave detector.
- FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
- FIG. 3 is a sectional view taken along line III-III in FIG. 2.
- FIG. 4 is a sectional view taken along line IV-IV in FIG. 2.
- It is sectional drawing which shows the process of the manufacturing method of the terahertz wave detector of FIG.
- It is sectional drawing which shows the process of the manufacturing method of the terahertz wave detector of FIG.
- It is sectional drawing which shows the process of the manufacturing method of the terahertz wave detector of FIG.
- FIG. 1 It is sectional drawing which shows the process of the manufacturing method of the terahertz wave detector of FIG. It is a longitudinal cross-sectional view of the terahertz wave detector of the 2nd Embodiment of this invention. It is a longitudinal cross-sectional view of the modification of the terahertz wave detector of FIG. It is a longitudinal cross-sectional view of the modification of the terahertz wave detector of FIG. It is a longitudinal cross-sectional view of the modification of the terahertz wave detector of FIG. It is a longitudinal cross-sectional view of the terahertz wave detector of the 3rd Embodiment of this invention.
- the terahertz wave detector 1 includes a rectangular plate-like substrate 3 and a substrate 4 joined to each other so as to form an internal space 2.
- a quadrangular pyramid-shaped concave portion 5 is formed which expands toward the substrate 4 side.
- An insulating film 6 is formed on the surface 3 a of the substrate 3 and the bottom surface 5 a and the side surface 5 b of the recess 5.
- an insulating film 7 and an insulating film 8 are formed on the surface 4 a on the substrate 3 side of the substrate 4.
- the substrate 3 and the substrate 4 are joined by a sealing metal 9 arranged in a rectangular ring shape so as to surround the recess 5, and the internal space 2 is vacuum-sealed.
- a pair of antenna main bodies 11 are formed on the bottom surface 5 a of the recess 5 of the substrate 3 with an insulating film 6 interposed therebetween.
- Each antenna body 11 is formed in a triangular shape that expands from the inside toward the outside (see FIG. 2).
- the antenna body 11 receives the terahertz wave and converts it into a current.
- the insulating film 12 is supported on the substrate 4 through the gap S in the internal space 2.
- a resistance film 13 is formed on the surface (one surface) 12a of the insulating film 12 on the substrate 3 side.
- the resistance film 13 generates heat according to the current converted by the antenna body 11.
- a bolometer film 14 is formed on the surface (the other surface) 12b of the insulating film 12 on the substrate 4 side. The electric resistance value of the bolometer film 14 changes according to the heat generated by the resistance film 13.
- the antenna wiring 15 and the bolometer wiring 16 are formed on the surface 4a of the substrate 4.
- the antenna wiring 15 is formed on the insulating film 8, and the bolometer wiring 16 is formed between the insulating film 7 and the insulating film 8 (see FIG. 2).
- the antenna wiring 15 is electrically connected to the antenna body 11 and the resistance film 13 in order to supply a current from the antenna body 11 to the resistance film 13.
- the bolometer wiring 16 is electrically connected to the bolometer film 14 in order to acquire a signal corresponding to the electric resistance value.
- the insulating film 12 includes a rectangular film-shaped main body portion 17, a pair of beam portions 18, and a pair of beam portions 19.
- the beam portion 18 extends outward from each corner portion of the main body portion 17 located on one diagonal line
- the beam portion 19 extends outward from each corner portion of the main body portion 17 located on the other diagonal line. It is extended.
- substrate 4 are arrange
- a pair of wirings 21 is formed on the surface 12 a of the insulating film 12. Each wiring 21 is electrically connected to the resistance film 13, and extends from the resistance film 13 to the tip end portion 18 a of each beam portion 18.
- a pair of wirings 22 is formed on the surface 12 b of the insulating film 12. The wiring 22 is electrically connected to the bolometer film 14, and extends from the bolometer film 14 to the distal end portion 19 a of each beam portion 19.
- each antenna wiring 15 is opposed to the tip end portion 18 a of each beam portion 18 through the columnar member 23.
- One end of the columnar member 23 is connected to the wiring 21 through a through hole formed in the distal end portion 18 a of the beam portion 18, and the other end of the columnar member 23 is the inner end of the antenna wiring 15. It is connected to the part 15a. Thereby, the columnar member 23 forms part of the antenna wiring 15.
- the outer end 15 b of each antenna wiring 15 is electrically connected to the inner end 11 a of the antenna body 11 via the bumps 25 in the internal space 2.
- each bolometer wiring 16 is opposed to the tip end portion 19 a of each beam portion 19 through the columnar member 24.
- One end of the columnar member 24 is connected to the wiring 22, and the other end of the columnar member 23 is connected to the inner end 16 a of the bolometer wiring 16 through the opening 8 a formed in the insulating film 8.
- the columnar member 24 forms part of the bolometer wiring 16.
- the outer end portion 16b of each bolometer wiring 16 is exposed to the outside through the opening 8b formed in the insulating film 8 outside the substrate 3, and a signal corresponding to the electric resistance value of the bolometer film 14 is transmitted. It is a terminal for acquisition.
- the current converted by the antenna body 11 is supplied to the resistance film 13 via the antenna wiring 15.
- the antenna body 11 is formed on the substrate 3, while the antenna wiring 15 is formed on the substrate 4.
- the antenna wiring 15 can be elongated to the same extent as the bolometer wiring 16, and the thermal resistance of the antenna wiring 15 can be increased.
- the insulating film 12, the resistance film 13, and the bolometer film 14 are thermally removed from the antenna body 11. Can be separated. Therefore, the terahertz wave detector 1 can detect terahertz waves with high accuracy.
- the insulating film 12, the resistance film 13, and the bolometer film 14 are thermally separated from the antenna body 11, the heat capacities of the insulating film 12, the resistance film 13, and the bolometer film 14 are reduced. Thereby, the response speed of the terahertz wave detector 1 can be improved.
- each antenna wiring 15 and each bolometer wiring 16 include electrically conductive columnar members 23 and 24 that stand on the substrate 4 and support the insulating film 12.
- the insulating film 12, the resistance film 13, and the bolometer film 14 can be reliably supported on the substrate 4 via the gap S and can be thermally separated from the substrate 4.
- the antenna body 11 and the antenna wiring 15 are electrically connected to each other through the bumps 25 in the internal space 2. Thereby, electrical connection between the antenna main body 11 on the substrate 3 side and the antenna wiring 15 on the substrate 4 side can be reliably realized.
- a terahertz wave may be incident on the antenna body 11 from the substrate 3 side, or a terahertz wave may be incident on the antenna body 11 from the substrate 4 side, but the terahertz wave is incident. If a silicon substrate having a higher specific resistance than the substrate on the opposite side is used for the side substrate, the transmittance of terahertz waves can be improved.
- a substrate 3 and a substrate 4 made of, for example, silicon are prepared.
- the substrate 3 and the substrate 4 are bonded to each other so as to form the internal space 2.
- a bolometer wiring 16 made of, for example, Al is formed on the insulating film 7.
- an insulating film 8 made of, for example, SiN is formed on the insulating film 7 so as to cover the bolometer wiring 16, and then a sealing metal 9 made of, for example, Al and an antenna wiring 15 are formed on the insulating film 8.
- openings 8a and 8b are formed in the insulating film 8 so that the inner end 16a and the outer end 16b of the bolometer wiring 16 are exposed to the outside.
- the antenna wiring 15 and the columnar member 23 are electrically connected, and the bolometer wiring 16, the columnar member 24, the wiring 22 and the bolometer film 14 are electrically connected.
- the insulating film 12 made of, for example, SiN is formed on the sacrificial layer 51 so as to cover the wiring 22 and the bolometer film 14.
- a resistance film 13 made of, for example, amorphous Si is formed on the insulating film 12. Then, after forming a through hole at the tip end portion 18 a of the beam portion 18 of the insulating film 12, a wiring 21 made of, for example, TiN is formed on the insulating film 12 and the resistance film 13. As a result, the antenna wiring 15, the columnar member 23, the wiring 21, and the resistance film 13 are electrically connected. Subsequently, as shown in FIG. 6B, the sacrificial layer 51 is removed by etching.
- the insulating film 12, the resistance film 13, and the bolometer film 14 are supported on the substrate 4 via the gap S so as to be positioned in the internal space 2. Subsequently, bumps 25 made of, for example, In are disposed on the outer end 15 b of the antenna wiring 15.
- the recess 5 is formed by etching the substrate 3 using the insulating film 52 made of SiN as a mask, for example.
- the insulating film 6 made of, for example, SiO 2 is formed on the surface 3a of the substrate 3 and the bottom surface 5a and the side surface 5b of the recess 5.
- a sealing metal 9 made of, for example, Al and an antenna body 11 are formed on the insulating film 6.
- bumps 25 made of, for example, In are disposed on the inner end portion 11 a of the antenna body 11.
- the substrate 3 and the substrate 4 are joined so as to form the internal space 2, and the antenna body 11 and the antenna wiring 15 are electrically connected.
- the substrate 3 and the substrate 4 are bonded by room-temperature bonding, anodic bonding, metal-metal bonding, or the like between the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side.
- the antenna body 11 and the antenna wiring 15 are electrically connected by integrating the bump 25 on the antenna body 11 side and the bump 25 on the antenna wiring 15 side. Note that if an alignment mark is formed on at least one of the substrate 3 side and the substrate 4 side, a highly accurate position can be obtained when the substrate 3 and the substrate 4 are joined and when the antenna body 11 and the antenna wiring 15 are electrically connected. Matching is possible.
- the antenna body 11 is formed on the substrate 3, while the insulating film 12, the resistance film 13, and the bolometer film 14 are supported on the substrate 4 via the gap S, and the antenna The wiring 15 and the bolometer wiring 16 are formed on the substrate 4.
- the antenna body 11 having a shape suitable for the detection wavelength can be formed on the substrate 3 regardless of the step of forming the insulating film 12, the resistance film 13 and the bolometer film 14 on the substrate 4.
- the antenna wiring 15 that is as long as the bolometer wiring 16 can be formed on the substrate 4. Therefore, according to the manufacturing method of the terahertz wave detector 1 described above, it is possible to manufacture the terahertz wave detector 1 that can detect the terahertz wave with high accuracy.
- the yield in manufacturing the terahertz wave detector 1 can be improved.
- the antenna body 11 is formed by film formation / patterning on the substrate 3. Therefore, even if the antenna body 11 is widened according to the detection wavelength, deformation due to the weight of the antenna body 11 can be prevented. Furthermore, since a columnar member for supporting the antenna body 11 is not necessary, the structure can be simplified.
- the terahertz wave detector 1 of the second embodiment is different from the terahertz wave detector 1 of the first embodiment described above in the electrical connection between the antenna body 11 and the antenna wiring 15. is doing.
- the substrate 3 is formed with a pair of convex portions 26 that protrude toward the substrate 4 in the internal space 2.
- the antenna main body 11 extends on the convex portion 26, and the inner end 11 a of the antenna main body 11 is located on the convex portion 26.
- the inner end portion 11 a of the antenna body 11 is electrically connected to the outer end portion 15 b of the antenna wiring 15 on the convex portion 26.
- the convex portion 26 is left with the insulating film 52 as a mask when the concave portion 5 is formed in the substrate 3 by etching.
- the height of the convex portion 26 is such that when the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side are brought into contact with each other, the inner end portion 11a of the antenna body 11 and the outer end portion of the antenna wiring 15 are placed. 15b is set to contact.
- the inner end portion 11a of the antenna body 11 and the outer end portion 15b of the antenna wiring 15 are joined at room temperature, similarly to the joining of the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side. Bonding is performed by anodic bonding, metal-metal bonding, or the like.
- the same effect as that of the terahertz wave detector 1 of the first embodiment described above is exhibited.
- the substrate 4 may be provided with a convex portion 27 protruding toward the substrate 3 in the internal space 2.
- the antenna wiring 15 extends on the convex portion 27, and the outer end portion 15 b of the antenna wiring 15 is located on the convex portion 27.
- the outer end 15 b of the antenna wiring 15 is electrically connected to the inner end 11 a of the antenna body 11 on the convex portion 27.
- the height of the convex portion 27 is such that when the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side are brought into contact with each other, the inner end portion 11 a of the antenna body 11 and the outer end portion of the antenna wiring 15. 15b is set to contact.
- the substrate 3 is formed with a convex portion 26 that protrudes toward the substrate 4 in the internal space 2, and the convex portion 27 that protrudes toward the substrate 3 in the internal space 2. May be formed.
- the antenna main body 11 extends on the convex portion 26, and the inner end 11 a of the antenna main body 11 is located on the convex portion 26.
- the antenna wiring 15 extends on the convex portion 27, and the outer end 15 b of the antenna wiring 15 is located on the convex portion 27.
- the inner end portion 11a of the antenna body 11 and the outer end portion 15b of the antenna wiring 15 are electrically connected on the convex portions 26 and the convex portions 27 facing each other.
- the heights of the convex portions 26 and the convex portions 27 facing each other are such that when the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side are brought into contact with each other, the inner end portion 11a of the antenna body 11 and the antenna.
- the outer end 15b of the wiring 15 is set so as to come into contact.
- the terahertz wave detector 1 of the third embodiment is different from the terahertz wave detector 1 of the first embodiment described above in electrical connection between the antenna body 11 and the antenna wiring 15. is doing. That is, in the terahertz wave detector 1 according to the third embodiment, each of the pair of antenna bodies 11 extends from the bottom surface 5a of the recess 5 to the surface 3a of the substrate 3 via the side surface 5b. The outer end portion 11 b of the substrate 3 is located on the surface 3 a of the substrate 3. Further, each of the pair of antenna wirings 15 extends to a portion facing the outer end portion 11b of each antenna body 11, and the outer end portion 15b of each antenna wiring 15 is connected to the outer end portion 11b of each antenna body 11. Located in the opposite part. The outer end 11b of the antenna body 11 and the outer end 15b of the antenna wiring 15 are electrically connected.
- the outer end portion 11b of the antenna body 11 and the outer end portion 15b of the antenna wiring 15 are bonded at room temperature and anode, similarly to the bonding of the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side. Bonding is performed by bonding, metal-metal bonding, or the like. For the purpose of electrical insulation, the outer end 11b of the antenna body 11 is separated from the sealing metal 9 on the substrate 3 side, and the outer end 15b of the antenna wiring 15 is used for sealing on the substrate 4 side. Separated from the metal 9.
- the terahertz wave detector 1 of the third embodiment described above the same effects as those of the terahertz wave detector 1 of the first embodiment described above are exhibited. Furthermore, the antenna body 11 can be made wider according to the detection wavelength. Further, the antenna wiring 15 can be made longer in order to thermally separate the insulating film 12, the resistance film 13, and the bolometer film 14 from the antenna body 11. [Fourth Embodiment]
- the terahertz wave detector 1 of the fourth embodiment is different from the terahertz wave detector 1 of the second embodiment described above in that a reflective film 28 is formed.
- the terahertz wave detector 1 according to the fourth embodiment is configured to cause the terahertz wave to be incident on the antenna body 11 from the substrate 3 side.
- the terahertz wave is incident on the surface 4a of the substrate 4 on the downstream side in the traveling direction of the terahertz wave.
- a reflective film 28 is formed so as to face the antenna body 11.
- the reflective film 28 may be formed on the surface 4 b of the substrate 4 on the side opposite to the substrate 3.
- the terahertz wave detector 1 of the fourth embodiment described above the same effects as those of the terahertz wave detector 1 of the first embodiment described above are exhibited. Furthermore, since the terahertz wave reflected by the reflective film 28 enters the antenna body 11, the terahertz wave detection sensitivity can be improved.
- the distance between the antenna body 11 and the reflective film 28 is preferably 1 ⁇ 4 of the detection wavelength (for example, 150 ⁇ m if the detection wavelength is 600 ⁇ m (0.5 THz)). This is because it is effective to resonate between the antenna body 11 and the reflective film 28 in order to efficiently receive the terahertz wave as a radio wave.
- the antenna body 11 and the reflective film 28 are formed on different substrates 3 and 4, so that the distance between the antenna body 11 and the reflective film 28 can be easily set to a desired value.
- the reflective film 28 may be formed on the surface 4a (or the surface 4b) of the substrate 4 so as to face the bolometer film 14 on the downstream side in the traveling direction of the terahertz wave. Also in this case, since the terahertz wave reflected by the reflecting film 28 enters the bolometer film 14, the terahertz wave detection sensitivity can be improved.
- the side surface 26a of the convex portion 26 may be an inclined surface facing the reflective film 28, and the antenna body 11 may be formed on the side surface 26a.
- a part of the surface 4a of the substrate 4 may be an inclined surface facing the antenna body 11, and a reflective film 28 may be formed on a part of the surface 4a.
- the terahertz wave detector 1 according to the fifth embodiment is different from the terahertz wave detector 1 according to the second embodiment described above in that a reflective film 29 is formed.
- the terahertz wave detector 1 according to the fifth embodiment is configured to cause the terahertz wave to be incident on the antenna body 11 from the substrate 4 side, and the surface 3b of the substrate 3 on the opposite side of the substrate 4 has a terahertz wave.
- a reflective film 29 is formed so as to face the antenna body 11 and the bolometer film 14 on the downstream side in the traveling direction.
- a reflective film 29 may be formed on the bottom surface 5 a of the recess 5 of the substrate 3 so as to face the bolometer film 14.
- the terahertz wave detector 1 of the fifth embodiment described above the same effects as the terahertz wave detector 1 of the first embodiment described above are exhibited. Furthermore, since the terahertz wave reflected by the reflecting film 29 is incident on the antenna body 11 and the bolometer film 14, the terahertz wave detection sensitivity can be improved.
- the distance between the antenna body 11 and the reflective film 29 and the distance between the bolometer film 14 and the reflective film 29 can be easily adjusted by adjusting the thickness of the substrate 3 and the depth of the recess 5. It can be set to a desired value.
- a plurality of terahertz wave detectors 1 may be arranged and used in a two-dimensional matrix. Further, the surface of the antenna body 11 may be roughened in order to improve the absorption rate of the terahertz wave.
- a terahertz wave detector capable of accurately detecting a terahertz wave and a method for manufacturing such a terahertz wave detector.
- SYMBOLS 1 ... Terahertz wave detector, 2 ... Internal space, 3 ... Board
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- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
A terahertz wave detector (1) comprising: a substrate (3) and a substrate (4) which are joined to each other so as to form an internal space (2); an antenna main body (11) which is formed on the substrate (3) and can receive a terahertz wave and convert the terahertz wave into an electric current; an insulating film (12) which is supported on the substrate (4) through an air gap in the internal space (2); a resistive film (13) which is formed on one surface (12a) of the insulating film (12) and can generate heat corresponding to the electric current that has been converted by the antenna main body (11); a bolometer film (14) which is formed on the other surface (12b) of the insulating film (12) and of which the electric resistivity can vary in accordance with the heat generated in the resistive film (13); an antenna wiring line (15) which is formed on the substrate (4) and is electrically connected to the antenna main body (11) and the resistive film (13) for the purpose of supplying an electric current from the antenna main body (11) to the resistive film (13); and a bolometer wiring line (16) which is formed on the substrate (4) and is electrically connected to the bolometer film (14) for the purpose of obtaining a signal corresponding to the electric resistivity.
Description
本発明は、テラヘルツ波検出器及びその製造方法に関する。
The present invention relates to a terahertz wave detector and a manufacturing method thereof.
上記技術分野における従来のテラヘルツ波検出器として、テラヘルツ波を受信して電流に変換するアンテナ本体と、アンテナ本体で変換された電流に応じて熱を発生する抵抗膜と、抵抗膜で発生された熱に応じて電気抵抗値が変化するボロメータ膜と、を備えるものが知られている(例えば特許文献1参照)。このようなテラヘルツ波検出器では、ボロメータ膜の電気抵抗値に応じた信号に基づいてテラヘルツ波の検出が行われる。
As a conventional terahertz wave detector in the above technical field, an antenna body that receives a terahertz wave and converts it into a current, a resistance film that generates heat according to the current converted by the antenna body, and a resistance film What is provided with the bolometer film | membrane with which an electrical resistance value changes according to heat is known (for example, refer patent document 1). In such a terahertz wave detector, terahertz waves are detected based on a signal corresponding to the electric resistance value of the bolometer film.
ところで、上述したようなテラヘルツ波検出器においては、絶縁膜を介して抵抗膜及びボロメータ膜を一体的に形成する場合に、絶縁膜、抵抗膜及びボロメータ膜を基板やアンテナ本体から如何に熱的に分離し得るかが重要となる。そのために、特許文献1記載のテラヘルツ波検出器では、アンテナ本体と抵抗膜とを接続する導電性ポストによって、絶縁膜、抵抗膜及びボロメータ膜が空隙を介して基板上に保持されている。
By the way, in the terahertz wave detector as described above, when the resistance film and the bolometer film are integrally formed via the insulating film, how the insulating film, the resistance film, and the bolometer film are thermally separated from the substrate or the antenna body. It is important whether it can be separated. Therefore, in the terahertz wave detector described in Patent Document 1, the insulating film, the resistance film, and the bolometer film are held on the substrate through the air gap by the conductive posts that connect the antenna body and the resistance film.
しかしながら、特許文献1記載のテラヘルツ波検出器にあっては、熱的分離を図る上では導電性ポストを細長くすることが有利であるものの、機械的強度を確保する必要性から導電性ポストを細長くすることには限度がある。そのため、導電性ポストを介して抵抗膜からアンテナ本体に熱が逃げてしまい、テラヘルツ波の検出精度が劣化するおそれがある。
However, in the terahertz wave detector described in Patent Document 1, although it is advantageous to make the conductive post elongated in order to achieve thermal separation, the conductive post is elongated in order to ensure mechanical strength. There are limits to what you can do. For this reason, heat escapes from the resistive film to the antenna body via the conductive posts, and the terahertz wave detection accuracy may be deteriorated.
そこで、本発明は、テラヘルツ波を精度良く検出することができるテラヘルツ波検出器、及びそのようなテラヘルツ波検出器の製造方法を提供することを目的とする。
Therefore, an object of the present invention is to provide a terahertz wave detector that can detect terahertz waves with high accuracy, and a method of manufacturing such a terahertz wave detector.
上記目的を達成するためのテラヘルツ波検出器は、内部空間を形成するように互いに接合された第1の基板及び第2の基板と、第1の基板に形成され、テラヘルツ波を受信して電流に変換するアンテナ本体と、内部空間において第2の基板上に空隙を介して支持された絶縁膜と、絶縁膜の一方の面に形成され、アンテナ本体で変換された電流に応じて熱を発生する抵抗膜と、絶縁膜の他方の面に形成され、抵抗膜で発生された熱に応じて電気抵抗値が変化するボロメータ膜と、第2の基板に形成され、アンテナ本体から抵抗膜に電流を供給するためにアンテナ本体及び抵抗膜と電気的に接続されたアンテナ配線と、第2の基板に形成され、電気抵抗値に応じた信号を取得するためにボロメータ膜と電気的に接続されたボロメータ配線と、を備える。
A terahertz wave detector for achieving the above object is formed on a first substrate and a second substrate, which are bonded to each other so as to form an internal space, and receives a terahertz wave to receive a current. The antenna body that converts to an internal space, the insulating film supported on the second substrate through the air gap in the internal space, and formed on one surface of the insulating film, generates heat according to the current converted by the antenna body And a bolometer film formed on the other surface of the insulating film, the electric resistance value of which varies according to the heat generated in the resistance film, and formed on the second substrate, from the antenna body to the resistance film. Antenna wiring electrically connected to the antenna body and the resistive film to supply the power, and formed on the second substrate, and electrically connected to the bolometer film to obtain a signal corresponding to the electrical resistance value Bolometer wiring, Obtain.
このテラヘルツ波検出器では、アンテナ本体で変換された電流は、アンテナ配線を介して抵抗膜に供給される。そして、アンテナ本体が第1の基板に形成されているのに対して、アンテナ配線は第2の基板に形成されている。これにより、例えばボロメータ配線と同程度にアンテナ配線を細長くすることができ、その結果、絶縁膜、抵抗膜及びボロメータ膜の、基板やアンテナ本体からの十分な熱的分離を図ることができる。よって、このテラヘルツ波検出器によれば、テラヘルツ波を精度良く検出することが可能となる。
In this terahertz wave detector, the current converted by the antenna body is supplied to the resistance film via the antenna wiring. The antenna body is formed on the first substrate, whereas the antenna wiring is formed on the second substrate. Thereby, for example, the antenna wiring can be elongated to the same extent as the bolometer wiring, and as a result, the insulating film, the resistance film, and the bolometer film can be sufficiently separated from the substrate and the antenna body. Therefore, according to the terahertz wave detector, it is possible to detect the terahertz wave with high accuracy.
ここで、上記テラヘルツ波検出器においては、アンテナ配線及びボロメータ配線は、それぞれ、第2の基板に立設されて絶縁膜を支持する電気伝導性の柱状部材を含んでいてもよい。この構成によれば、絶縁膜、抵抗膜及びボロメータ膜を、第2の基板上に空隙を介して確実に支持させることができる。
Here, in the terahertz wave detector, the antenna wiring and the bolometer wiring may each include an electrically conductive columnar member that stands on the second substrate and supports the insulating film. According to this configuration, the insulating film, the resistance film, and the bolometer film can be reliably supported on the second substrate via the gap.
また、上記テラヘルツ波検出器においては、第1の基板には、内部空間において第2の基板側に突出する第1の凸部が形成されており、アンテナ本体は、第1の凸部上に延在しかつ第1の凸部上においてアンテナ配線と電気的に接続されていてもよい。更に、上記テラヘルツ波検出器においては、第2の基板には、内部空間において第1の基板側に突出する第2の凸部が形成されており、アンテナ配線は、第2の凸部上に延在しかつ第2の凸部上においてアンテナ本体と電気的に接続されていてもよい。或いは、上記テラヘルツ波検出器においては、アンテナ本体とアンテナ配線とは、内部空間においてバンプを介して互いに電気的に接続されていてもよい。これらの構成によれば、第1の基板側のアンテナ本体と第2の基板側のアンテナ配線との電気的接続を確実に実現することができる。
In the terahertz wave detector, the first substrate has a first convex portion that protrudes toward the second substrate side in the internal space, and the antenna body is formed on the first convex portion. It may extend and be electrically connected to the antenna wiring on the first convex portion. Furthermore, in the terahertz wave detector, the second substrate has a second convex portion protruding toward the first substrate in the internal space, and the antenna wiring is on the second convex portion. It may extend and be electrically connected to the antenna body on the second convex portion. Alternatively, in the terahertz wave detector, the antenna body and the antenna wiring may be electrically connected to each other via a bump in the internal space. According to these configurations, electrical connection between the antenna body on the first substrate side and the antenna wiring on the second substrate side can be reliably realized.
また、上記テラヘルツ波検出器においては、第1の基板側からアンテナ本体にテラヘルツ波が入射する場合には、第2の基板には、テラヘルツ波の進行方向の下流側においてアンテナ本体及びボロメータ膜の少なくとも一方と対向するように第1の反射膜が形成されていてもよい。或いは、上記テラヘルツ波検出器においては、第2の基板側からアンテナ本体にテラヘルツ波が入射する場合には、第1の基板には、テラヘルツ波の進行方向の下流側においてアンテナ本体及びボロメータ膜の少なくとも一方と対向するように第2の反射膜が形成されていてもよい。これらの構成によれば、第1の反射膜或いは第2の反射膜で反射されたテラヘルツ波がアンテナ本体やボロメータ膜に入射するので、テラヘルツ波の検出感度を向上させることができる。
In the terahertz wave detector, when the terahertz wave is incident on the antenna body from the first substrate side, the antenna body and the bolometer film are formed on the second substrate on the downstream side in the traveling direction of the terahertz wave. The first reflective film may be formed so as to face at least one of them. Alternatively, in the terahertz wave detector, when the terahertz wave is incident on the antenna body from the second substrate side, the antenna body and the bolometer film are formed on the first substrate on the downstream side in the traveling direction of the terahertz wave. A second reflective film may be formed so as to face at least one. According to these configurations, the terahertz wave reflected by the first reflecting film or the second reflecting film is incident on the antenna body or the bolometer film, so that the terahertz wave detection sensitivity can be improved.
また、テラヘルツ波検出器の製造方法は、テラヘルツ波を受信して電流に変換するアンテナ本体と、アンテナ本体で変換された電流に応じて熱を発生する抵抗膜と、抵抗膜で発生された熱に応じて電気抵抗値が変化するボロメータ膜と、を備えるテラヘルツ波検出器の製造方法であって、内部空間を形成するように互いに接合される第1の基板及び第2の基板を準備する第1の工程と、第1の工程の後に、アンテナ本体を第1の基板に形成する第2の工程と、第1の工程の後に、絶縁膜、絶縁膜の一方の面に形成された抵抗膜、及び絶縁膜の他方の面に形成されたボロメータ膜を、内部空間に位置するように第2の基板上に空隙を介して支持させると共に、アンテナ本体から抵抗膜に電流を供給するために抵抗膜と電気的に接続されたアンテナ配線、及び電気抵抗値に応じた信号を取得するためにボロメータ膜と電気的に接続されたボロメータ配線を、第2の基板に形成する第3の工程と、第2工程及び第3の工程の後に、内部空間を形成するように第1の基板と第2の基板とを接合すると共に、アンテナ本体とアンテナ配線とを電気的に接続する第4の工程と、を含む。
In addition, a method for manufacturing a terahertz wave detector includes an antenna body that receives a terahertz wave and converts it into a current, a resistance film that generates heat according to the current converted by the antenna body, and a heat generated in the resistance film. A terahertz wave detector comprising: a bolometer film whose electrical resistance value changes in response to the first and second substrates that are joined together to form an internal space. After the first step, the second step of forming the antenna body on the first substrate after the first step, and the resistance film formed on one surface of the insulating film and the insulating film after the first step And the bolometer film formed on the other surface of the insulating film is supported on the second substrate through the air gap so as to be positioned in the internal space, and the resistor is used to supply current from the antenna body to the resistance film. An electrically connected to the membrane A third step of forming on the second substrate a bolometer wiring electrically connected to the bolometer film in order to obtain a signal corresponding to the wiring and the electrical resistance value; and a second step and a third step And a fourth step of joining the first substrate and the second substrate so as to form an internal space and electrically connecting the antenna body and the antenna wiring.
このテラヘルツ波検出器の製造方法では、アンテナ本体を第1の基板に形成する一方で、絶縁膜、抵抗膜及びボロメータ膜を第2の基板上に空隙を介して支持させると共に、アンテナ配線及びボロメータ配線を第2の基板に形成する。これにより、第2の基板に対する絶縁膜、抵抗膜及びボロメータ膜の形成工程に拘らず、検出波長に好適な形状を有するアンテナ本体を第1の基板に形成することができる。しかも、例えばボロメータ配線と同程度に細長いアンテナ配線を第2の基板に形成することができる。よって、このテラヘルツ波検出器の製造方法によれば、テラヘルツ波を精度良く検出し得るテラヘルツ波検出器を製造することが可能となる。なお、第2の工程と第3の工程とは順序不同である。
In this method of manufacturing a terahertz wave detector, the antenna body is formed on the first substrate, while the insulating film, the resistance film, and the bolometer film are supported on the second substrate via the air gap, and the antenna wiring and the bolometer Wiring is formed on the second substrate. Accordingly, an antenna body having a shape suitable for the detection wavelength can be formed on the first substrate regardless of the step of forming the insulating film, the resistance film, and the bolometer film on the second substrate. Moreover, for example, antenna wiring that is as long as the bolometer wiring can be formed on the second substrate. Therefore, according to this method for manufacturing a terahertz wave detector, it is possible to manufacture a terahertz wave detector that can detect terahertz waves with high accuracy. Note that the second step and the third step are out of order.
本発明によれば、テラヘルツ波を精度良く検出することができるテラヘルツ波検出器、及びそのようなテラヘルツ波検出器の製造方法を提供することが可能となる。
According to the present invention, it is possible to provide a terahertz wave detector capable of accurately detecting a terahertz wave and a method for manufacturing such a terahertz wave detector.
以下、本発明の好適な実施形態について、図面を参照して詳細に説明する。なお、各図において同一又は相当部分には同一符号を付し、重複する説明を省略する。
[第1の実施形態] DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted.
[First Embodiment]
[第1の実施形態] DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted.
[First Embodiment]
図1に示されるように、テラヘルツ波検出器1は、内部空間2を形成するように互いに接合された矩形板状の基板3及び基板4を備えている。基板3における基板4側の表面3aには、基板4側に向かって末広がりとなる四角錐台状の凹部5が形成されている。基板3の表面3a並びに凹部5の底面5a及び側面5bには、絶縁膜6が形成されている。一方、基板4における基板3側の表面4aには、絶縁膜7及び絶縁膜8が形成されている。基板3と基板4とは、凹部5を包囲するように矩形環状に配置された封止用メタル9によって接合されており、内部空間2は、真空封止されている。
As shown in FIG. 1, the terahertz wave detector 1 includes a rectangular plate-like substrate 3 and a substrate 4 joined to each other so as to form an internal space 2. On the surface 3a of the substrate 3 on the substrate 4 side, a quadrangular pyramid-shaped concave portion 5 is formed which expands toward the substrate 4 side. An insulating film 6 is formed on the surface 3 a of the substrate 3 and the bottom surface 5 a and the side surface 5 b of the recess 5. On the other hand, an insulating film 7 and an insulating film 8 are formed on the surface 4 a on the substrate 3 side of the substrate 4. The substrate 3 and the substrate 4 are joined by a sealing metal 9 arranged in a rectangular ring shape so as to surround the recess 5, and the internal space 2 is vacuum-sealed.
基板3の凹部5の底面5aには、絶縁膜6を介して一対のアンテナ本体11が形成されている。各アンテナ本体11は、内側から外側に向かって末広がりとなる三角形状に形成されている(図2参照)。アンテナ本体11は、テラヘルツ波を受信して電流に変換する。
A pair of antenna main bodies 11 are formed on the bottom surface 5 a of the recess 5 of the substrate 3 with an insulating film 6 interposed therebetween. Each antenna body 11 is formed in a triangular shape that expands from the inside toward the outside (see FIG. 2). The antenna body 11 receives the terahertz wave and converts it into a current.
内部空間2において基板4上には、空隙Sを介して絶縁膜12が支持されている。絶縁膜12における基板3側の表面(一方の面)12aには、抵抗膜13が形成されている。抵抗膜13は、アンテナ本体11で変換された電流に応じて熱を発生する。一方、絶縁膜12における基板4側の表面(他方の面)12bには、ボロメータ膜14が形成されている。ボロメータ膜14は、抵抗膜13で発生された熱に応じて電気抵抗値が変化する。
The insulating film 12 is supported on the substrate 4 through the gap S in the internal space 2. A resistance film 13 is formed on the surface (one surface) 12a of the insulating film 12 on the substrate 3 side. The resistance film 13 generates heat according to the current converted by the antenna body 11. On the other hand, a bolometer film 14 is formed on the surface (the other surface) 12b of the insulating film 12 on the substrate 4 side. The electric resistance value of the bolometer film 14 changes according to the heat generated by the resistance film 13.
基板4の表面4aには、アンテナ配線15及びボロメータ配線16が形成されている。アンテナ配線15は、絶縁膜8上に形成されており、ボロメータ配線16は、絶縁膜7と絶縁膜8との間に形成されている(図2参照)。アンテナ配線15は、アンテナ本体11から抵抗膜13に電流を供給するためにアンテナ本体11及び抵抗膜13と電気的に接続されている。ボロメータ配線16は、電気抵抗値に応じた信号を取得するためにボロメータ膜14と電気的に接続されている。
The antenna wiring 15 and the bolometer wiring 16 are formed on the surface 4a of the substrate 4. The antenna wiring 15 is formed on the insulating film 8, and the bolometer wiring 16 is formed between the insulating film 7 and the insulating film 8 (see FIG. 2). The antenna wiring 15 is electrically connected to the antenna body 11 and the resistance film 13 in order to supply a current from the antenna body 11 to the resistance film 13. The bolometer wiring 16 is electrically connected to the bolometer film 14 in order to acquire a signal corresponding to the electric resistance value.
図2~4に示されるように、絶縁膜12は、矩形膜状の本体部17、一対の梁部18及び一対の梁部19を有している。梁部18は、一方の対角線上に位置する本体部17の各角部から外側に延在しており、梁部19は、他方の対角線上に位置する本体部17の各角部から外側に延在している。各梁部18,19と基板4との間には、基板4に対して立設された電気伝導性の柱状部材23,24が配置されている。柱状部材23,24は、絶縁膜12、延いては抵抗膜13及びボロメータ膜14を、空隙Sを介して基板4上に支持している。
As shown in FIGS. 2 to 4, the insulating film 12 includes a rectangular film-shaped main body portion 17, a pair of beam portions 18, and a pair of beam portions 19. The beam portion 18 extends outward from each corner portion of the main body portion 17 located on one diagonal line, and the beam portion 19 extends outward from each corner portion of the main body portion 17 located on the other diagonal line. It is extended. Between each beam part 18 and 19 and the board | substrate 4, the electroconductive columnar members 23 and 24 standingly arranged with respect to the board | substrate 4 are arrange | positioned. The columnar members 23 and 24 support the insulating film 12, that is, the resistance film 13 and the bolometer film 14 on the substrate 4 through the gap S.
絶縁膜12の表面12aには、一対の配線21が形成されている。各配線21は、抵抗膜13と電気的に接続されており、抵抗膜13から各梁部18の先端部18aに延在している。一方、絶縁膜12の表面12bには、一対の配線22が形成されている。配線22は、ボロメータ膜14と電気的に接続されており、ボロメータ膜14から各梁部19の先端部19aに延在している。
A pair of wirings 21 is formed on the surface 12 a of the insulating film 12. Each wiring 21 is electrically connected to the resistance film 13, and extends from the resistance film 13 to the tip end portion 18 a of each beam portion 18. On the other hand, a pair of wirings 22 is formed on the surface 12 b of the insulating film 12. The wiring 22 is electrically connected to the bolometer film 14, and extends from the bolometer film 14 to the distal end portion 19 a of each beam portion 19.
各アンテナ配線15の内側端部15aは、柱状部材23を介して各梁部18の先端部18aと対向している。柱状部材23の一方の端部は、梁部18の先端部18aに形成された貫通孔を介して配線21と接続されており、柱状部材23の他方の端部は、アンテナ配線15の内側端部15aと接続されている。これにより、柱状部材23は、アンテナ配線15の一部を成している。一方、各アンテナ配線15の外側端部15bは、内部空間2において、バンプ25を介してアンテナ本体11の内側端部11aと電気的に接続されている。
The inner end portion 15 a of each antenna wiring 15 is opposed to the tip end portion 18 a of each beam portion 18 through the columnar member 23. One end of the columnar member 23 is connected to the wiring 21 through a through hole formed in the distal end portion 18 a of the beam portion 18, and the other end of the columnar member 23 is the inner end of the antenna wiring 15. It is connected to the part 15a. Thereby, the columnar member 23 forms part of the antenna wiring 15. On the other hand, the outer end 15 b of each antenna wiring 15 is electrically connected to the inner end 11 a of the antenna body 11 via the bumps 25 in the internal space 2.
各ボロメータ配線16の内側端部16aは、柱状部材24を介して各梁部19の先端部19aと対向している。柱状部材24の一方の端部は、配線22と接続されており、柱状部材23の他方の端部は、絶縁膜8に形成された開口8aを介してボロメータ配線16の内側端部16aと接続されている。これにより、柱状部材24は、ボロメータ配線16の一部を成している。一方、各ボロメータ配線16の外側端部16bは、基板3の外側において、絶縁膜8に形成された開口8bを介して外部に露出しており、ボロメータ膜14の電気抵抗値に応じた信号を取得するための端子となっている。
The inner end portion 16 a of each bolometer wiring 16 is opposed to the tip end portion 19 a of each beam portion 19 through the columnar member 24. One end of the columnar member 24 is connected to the wiring 22, and the other end of the columnar member 23 is connected to the inner end 16 a of the bolometer wiring 16 through the opening 8 a formed in the insulating film 8. Has been. Thereby, the columnar member 24 forms part of the bolometer wiring 16. On the other hand, the outer end portion 16b of each bolometer wiring 16 is exposed to the outside through the opening 8b formed in the insulating film 8 outside the substrate 3, and a signal corresponding to the electric resistance value of the bolometer film 14 is transmitted. It is a terminal for acquisition.
以上のように構成されたテラヘルツ波検出器1では、アンテナ本体11で変換された電流は、アンテナ配線15を介して抵抗膜13に供給される。そして、アンテナ本体11が基板3に形成されているのに対して、アンテナ配線15は基板4に形成されている。これにより、ボロメータ配線16と同程度にアンテナ配線15を細長くしてアンテナ配線15の熱抵抗を増すことができ、その結果、絶縁膜12、抵抗膜13及びボロメータ膜14をアンテナ本体11から熱的に分離することができる。よって、テラヘルツ波検出器1によれば、テラヘルツ波を精度良く検出することが可能となる。
In the terahertz wave detector 1 configured as described above, the current converted by the antenna body 11 is supplied to the resistance film 13 via the antenna wiring 15. The antenna body 11 is formed on the substrate 3, while the antenna wiring 15 is formed on the substrate 4. As a result, the antenna wiring 15 can be elongated to the same extent as the bolometer wiring 16, and the thermal resistance of the antenna wiring 15 can be increased. As a result, the insulating film 12, the resistance film 13, and the bolometer film 14 are thermally removed from the antenna body 11. Can be separated. Therefore, the terahertz wave detector 1 can detect terahertz waves with high accuracy.
しかも、絶縁膜12、抵抗膜13及びボロメータ膜14がアンテナ本体11から熱的に分離されることで、絶縁膜12、抵抗膜13及びボロメータ膜14の熱容量が小さくなる。これにより、テラヘルツ波検出器1の応答速度を向上させることできる。
In addition, since the insulating film 12, the resistance film 13, and the bolometer film 14 are thermally separated from the antenna body 11, the heat capacities of the insulating film 12, the resistance film 13, and the bolometer film 14 are reduced. Thereby, the response speed of the terahertz wave detector 1 can be improved.
また、各アンテナ配線15及び各ボロメータ配線16は、基板4に立設されて絶縁膜12を支持する電気伝導性の柱状部材23,24を含んでいる。これにより、絶縁膜12、抵抗膜13及びボロメータ膜14を、基板4上に空隙Sを介して確実に支持させることができ、基板4から熱的に分離することができる。
Further, each antenna wiring 15 and each bolometer wiring 16 include electrically conductive columnar members 23 and 24 that stand on the substrate 4 and support the insulating film 12. As a result, the insulating film 12, the resistance film 13, and the bolometer film 14 can be reliably supported on the substrate 4 via the gap S and can be thermally separated from the substrate 4.
また、アンテナ本体11とアンテナ配線15とは、内部空間2においてバンプ25を介して互いに電気的に接続されている。これにより、基板3側のアンテナ本体11と基板4側のアンテナ配線15との電気的接続を確実に実現することができる。
The antenna body 11 and the antenna wiring 15 are electrically connected to each other through the bumps 25 in the internal space 2. Thereby, electrical connection between the antenna main body 11 on the substrate 3 side and the antenna wiring 15 on the substrate 4 side can be reliably realized.
なお、テラヘルツ波検出器1では、基板3側からアンテナ本体11にテラヘルツ波を入射させてもよいし、基板4側からアンテナ本体11にテラヘルツ波を入射させてもよいが、テラヘルツ波を入射させる側の基板に、その反対側の基板に比べ比抵抗が高いシリコン基板を用いれば、テラヘルツ波の透過率を向上させることができる。
In the terahertz wave detector 1, a terahertz wave may be incident on the antenna body 11 from the substrate 3 side, or a terahertz wave may be incident on the antenna body 11 from the substrate 4 side, but the terahertz wave is incident. If a silicon substrate having a higher specific resistance than the substrate on the opposite side is used for the side substrate, the transmittance of terahertz waves can be improved.
次に、上述したテラヘルツ波検出器1の製造方法について説明する。まず、例えばシリコンからなる基板3及び基板4を準備する。基板3及び基板4は、内部空間2を形成するように互いに接合されるものである。そして、図5(a)に示されるように、基板4の表面4aに、例えばSiO2からなる絶縁膜7を形成した後、絶縁膜7上に、例えばAlからなるボロメータ配線16を形成する。更に、ボロメータ配線16を覆うように絶縁膜7上に、例えばSiNからなる絶縁膜8を形成した後、絶縁膜8上に、例えばAlからなる封止用メタル9及びアンテナ配線15を形成する。ここで、絶縁膜8に開口8a,8bを形成してボロメータ配線16の内側端部16a及び外側端部16bを外部に露出させる。
Next, a manufacturing method of the above-described terahertz wave detector 1 will be described. First, a substrate 3 and a substrate 4 made of, for example, silicon are prepared. The substrate 3 and the substrate 4 are bonded to each other so as to form the internal space 2. Then, as shown in FIG. 5A, after an insulating film 7 made of, for example, SiO 2 is formed on the surface 4 a of the substrate 4, a bolometer wiring 16 made of, for example, Al is formed on the insulating film 7. Further, an insulating film 8 made of, for example, SiN is formed on the insulating film 7 so as to cover the bolometer wiring 16, and then a sealing metal 9 made of, for example, Al and an antenna wiring 15 are formed on the insulating film 8. Here, openings 8a and 8b are formed in the insulating film 8 so that the inner end 16a and the outer end 16b of the bolometer wiring 16 are exposed to the outside.
続いて、図5(b)に示されるように、封止用メタル9及びアンテナ配線15を覆うように絶縁膜8上に、例えばポリイミドからなる犠牲層51を形成する。そして、柱状部材23,24を配置すべき位置に貫通孔を形成した後、その貫通孔内に、例えばAl、Cu又はWを充填して柱状部材23,24を形成すると共に、犠牲層51上に、例えばTiNからなる配線22を形成する。更に、犠牲層51上に、例えばアモルファスSiからなるボロメータ膜14を形成する。これにより、アンテナ配線15及び柱状部材23が電気的に接続され、ボロメータ配線16、柱状部材24、配線22及びボロメータ膜14が電気的に接続される。続いて、配線22及びボロメータ膜14を覆うように犠牲層51上に、例えばSiNからなる絶縁膜12を形成する。
Subsequently, as shown in FIG. 5B, a sacrificial layer 51 made of polyimide, for example, is formed on the insulating film 8 so as to cover the sealing metal 9 and the antenna wiring 15. And after forming a through-hole in the position which should arrange | position the columnar members 23 and 24, while filling the through-hole with Al, Cu, or W, for example, while forming the columnar members 23 and 24, on the sacrificial layer 51 Then, a wiring 22 made of, for example, TiN is formed. Further, a bolometer film 14 made of, for example, amorphous Si is formed on the sacrificial layer 51. Thereby, the antenna wiring 15 and the columnar member 23 are electrically connected, and the bolometer wiring 16, the columnar member 24, the wiring 22 and the bolometer film 14 are electrically connected. Subsequently, the insulating film 12 made of, for example, SiN is formed on the sacrificial layer 51 so as to cover the wiring 22 and the bolometer film 14.
続いて、図6(a)に示されるように、絶縁膜12上に、例えばアモルファスSiからなる抵抗膜13を形成する。そして、絶縁膜12の梁部18の先端部18aに貫通孔を形成した後、絶縁膜12及び抵抗膜13上に、例えばTiNからなる配線21を形成する。これにより、アンテナ配線15、柱状部材23、配線21及び抵抗膜13が電気的に接続される。続いて、図6(b)に示されるように、犠牲層51をエッチングにより除去する。これにより、絶縁膜12、抵抗膜13及びボロメータ膜14が、内部空間2に位置するように基板4上に空隙Sを介して支持される。続いて、アンテナ配線15の外側端部15bに、例えばInからなるバンプ25を配置する。
Subsequently, as shown in FIG. 6A, a resistance film 13 made of, for example, amorphous Si is formed on the insulating film 12. Then, after forming a through hole at the tip end portion 18 a of the beam portion 18 of the insulating film 12, a wiring 21 made of, for example, TiN is formed on the insulating film 12 and the resistance film 13. As a result, the antenna wiring 15, the columnar member 23, the wiring 21, and the resistance film 13 are electrically connected. Subsequently, as shown in FIG. 6B, the sacrificial layer 51 is removed by etching. As a result, the insulating film 12, the resistance film 13, and the bolometer film 14 are supported on the substrate 4 via the gap S so as to be positioned in the internal space 2. Subsequently, bumps 25 made of, for example, In are disposed on the outer end 15 b of the antenna wiring 15.
その一方で、図7(a)に示されるように、例えばSiNからなる絶縁膜52をマスクとした基板3のエッチングにより凹部5を形成する。そして、図7(b)に示されるように、絶縁膜52を除去した後、基板3の表面3a並びに凹部5の底面5a及び側面5bに、例えばSiO2からなる絶縁膜6を形成する。続いて、図8(a)に示されるように、絶縁膜6上に、例えばAlからなる封止用メタル9及びアンテナ本体11を形成する。続いて、図8(b)に示されるように、アンテナ本体11の内側端部11aに、例えばInからなるバンプ25を配置する。
On the other hand, as shown in FIG. 7A, the recess 5 is formed by etching the substrate 3 using the insulating film 52 made of SiN as a mask, for example. Then, as shown in FIG. 7B, after the insulating film 52 is removed, the insulating film 6 made of, for example, SiO 2 is formed on the surface 3a of the substrate 3 and the bottom surface 5a and the side surface 5b of the recess 5. Subsequently, as shown in FIG. 8A, a sealing metal 9 made of, for example, Al and an antenna body 11 are formed on the insulating film 6. Subsequently, as illustrated in FIG. 8B, bumps 25 made of, for example, In are disposed on the inner end portion 11 a of the antenna body 11.
基板4に対する各膜12,13,14及び各配線15,16等の形成(図5,6)並びに基板3に対するアンテナ本体11等の形成(図7,8)の後、図9に示されるように、内部空間2を形成するように基板3と基板4とを接合すると共に、アンテナ本体11とアンテナ配線15とを電気的に接続する。ここで、基板3と基板4とは、基板3側の封止用メタル9と基板4側の封止用メタル9との常温接合、陽極接合及びメタル-メタル接合等によって、接合される。また、アンテナ本体11とアンテナ配線15とは、アンテナ本体11側のバンプ25とアンテナ配線15側のバンプ25との一体化によって、電気的に接続される。なお、基板3側及び基板4側の少なくとも一方にアライメントマークを形成しておけば、基板3と基板4との接合、及びアンテナ本体11とアンテナ配線15との電気的接続に際し、高精度な位置合わせが可能となる。
After the formation of the films 12, 13, 14 and the wirings 15, 16 on the substrate 4 (FIGS. 5 and 6) and the formation of the antenna body 11 etc. on the substrate 3 (FIGS. 7 and 8), as shown in FIG. In addition, the substrate 3 and the substrate 4 are joined so as to form the internal space 2, and the antenna body 11 and the antenna wiring 15 are electrically connected. Here, the substrate 3 and the substrate 4 are bonded by room-temperature bonding, anodic bonding, metal-metal bonding, or the like between the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side. The antenna body 11 and the antenna wiring 15 are electrically connected by integrating the bump 25 on the antenna body 11 side and the bump 25 on the antenna wiring 15 side. Note that if an alignment mark is formed on at least one of the substrate 3 side and the substrate 4 side, a highly accurate position can be obtained when the substrate 3 and the substrate 4 are joined and when the antenna body 11 and the antenna wiring 15 are electrically connected. Matching is possible.
以上のテラヘルツ波検出器1の製造方法では、アンテナ本体11を基板3に形成する一方で、絶縁膜12、抵抗膜13及びボロメータ膜14を基板4上に空隙Sを介して支持させると共に、アンテナ配線15及びボロメータ配線16を基板4に形成する。これにより、基板4に対する絶縁膜12、抵抗膜13及びボロメータ膜14の形成工程に拘らず、検出波長に好適な形状を有するアンテナ本体11を基板3に形成することができる。しかも、ボロメータ配線16と同程度に細長いアンテナ配線15を基板4に形成することができる。よって、上述したテラヘルツ波検出器1の製造方法によれば、テラヘルツ波を精度良く検出し得るテラヘルツ波検出器1を製造することが可能となる。
In the manufacturing method of the terahertz wave detector 1 described above, the antenna body 11 is formed on the substrate 3, while the insulating film 12, the resistance film 13, and the bolometer film 14 are supported on the substrate 4 via the gap S, and the antenna The wiring 15 and the bolometer wiring 16 are formed on the substrate 4. Thereby, the antenna body 11 having a shape suitable for the detection wavelength can be formed on the substrate 3 regardless of the step of forming the insulating film 12, the resistance film 13 and the bolometer film 14 on the substrate 4. Moreover, the antenna wiring 15 that is as long as the bolometer wiring 16 can be formed on the substrate 4. Therefore, according to the manufacturing method of the terahertz wave detector 1 described above, it is possible to manufacture the terahertz wave detector 1 that can detect the terahertz wave with high accuracy.
更に、アンテナ本体11の形成と、各膜12,13,14及び各配線15,16の形成とを、別々の基板3,4に対して行った後に、基板3と基板4との接合、及びアンテナ本体11とアンテナ配線15との電気的接続を行うので、テラヘルツ波検出器1の製造における歩留まりを向上させることができる。
Further, after the antenna body 11 and the films 12, 13, and 14 and the wirings 15 and 16 are formed on the separate substrates 3 and 4, bonding between the substrate 3 and the substrate 4, and Since the antenna body 11 and the antenna wiring 15 are electrically connected, the yield in manufacturing the terahertz wave detector 1 can be improved.
また、基板3に対する成膜・パターニングによってアンテナ本体11を形成する。そのため、検出波長に応じてアンテナ本体11を広くしても、アンテナ本体11の自重等に起因した変形を防止することができる。更に、アンテナ本体11を支持するための柱状部材等も不要となるので、構造の単純化を図ることができる。
[第2の実施形態] Theantenna body 11 is formed by film formation / patterning on the substrate 3. Therefore, even if the antenna body 11 is widened according to the detection wavelength, deformation due to the weight of the antenna body 11 can be prevented. Furthermore, since a columnar member for supporting the antenna body 11 is not necessary, the structure can be simplified.
[Second Embodiment]
[第2の実施形態] The
[Second Embodiment]
図10に示されるように、第2の実施形態のテラヘルツ波検出器1は、アンテナ本体11とアンテナ配線15との電気的接続において、上述した第1の実施形態のテラヘルツ波検出器1と相違している。すなわち、第2の実施形態のテラヘルツ波検出器1では、基板3に、内部空間2において基板4側に突出する一対の凸部26が形成されている。アンテナ本体11は凸部26上に延在しており、アンテナ本体11の内側端部11aが凸部26上に位置している。そして、アンテナ本体11の内側端部11aは、凸部26上においてアンテナ配線15の外側端部15bと電気的に接続されている。
As shown in FIG. 10, the terahertz wave detector 1 of the second embodiment is different from the terahertz wave detector 1 of the first embodiment described above in the electrical connection between the antenna body 11 and the antenna wiring 15. is doing. In other words, in the terahertz wave detector 1 according to the second embodiment, the substrate 3 is formed with a pair of convex portions 26 that protrude toward the substrate 4 in the internal space 2. The antenna main body 11 extends on the convex portion 26, and the inner end 11 a of the antenna main body 11 is located on the convex portion 26. The inner end portion 11 a of the antenna body 11 is electrically connected to the outer end portion 15 b of the antenna wiring 15 on the convex portion 26.
凸部26は、エッチングによって基板3に凹部5を形成するときに絶縁膜52をマスクとして残される。凸部26の高さは、基板3側の封止用メタル9と基板4側の封止用メタル9とを接触させたとき、アンテナ本体11の内側端部11aとアンテナ配線15の外側端部15bとが接触するように設定される。そして、アンテナ本体11の内側端部11aとアンテナ配線15の外側端部15bとは、基板3側の封止用メタル9と基板4側の封止用メタル9との接合と同様に、常温接合、陽極接合及びメタル-メタル接合等によって、接合される。
The convex portion 26 is left with the insulating film 52 as a mask when the concave portion 5 is formed in the substrate 3 by etching. The height of the convex portion 26 is such that when the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side are brought into contact with each other, the inner end portion 11a of the antenna body 11 and the outer end portion of the antenna wiring 15 are placed. 15b is set to contact. The inner end portion 11a of the antenna body 11 and the outer end portion 15b of the antenna wiring 15 are joined at room temperature, similarly to the joining of the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side. Bonding is performed by anodic bonding, metal-metal bonding, or the like.
以上の第2の実施形態のテラヘルツ波検出器1によっても、上述した第1の実施形態のテラヘルツ波検出器1と同様の効果が奏される。
Also by the terahertz wave detector 1 of the second embodiment described above, the same effect as that of the terahertz wave detector 1 of the first embodiment described above is exhibited.
なお、図11に示されるように、基板4に、内部空間2において基板3側に突出する凸部27が形成されていてもよい。この場合、アンテナ配線15は凸部27上に延在しており、アンテナ配線15の外側端部15bが凸部27上に位置している。そして、アンテナ配線15の外側端部15bは、凸部27上においてアンテナ本体11の内側端部11aと電気的に接続されている。凸部27の高さは、基板3側の封止用メタル9と基板4側の封止用メタル9とを接触させたとき、アンテナ本体11の内側端部11aとアンテナ配線15の外側端部15bとが接触するように設定される。
Note that, as shown in FIG. 11, the substrate 4 may be provided with a convex portion 27 protruding toward the substrate 3 in the internal space 2. In this case, the antenna wiring 15 extends on the convex portion 27, and the outer end portion 15 b of the antenna wiring 15 is located on the convex portion 27. The outer end 15 b of the antenna wiring 15 is electrically connected to the inner end 11 a of the antenna body 11 on the convex portion 27. The height of the convex portion 27 is such that when the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side are brought into contact with each other, the inner end portion 11 a of the antenna body 11 and the outer end portion of the antenna wiring 15. 15b is set to contact.
また、図12に示されるように、基板3に、内部空間2において基板4側に突出する凸部26が形成され、かつ、基板4に、内部空間2において基板3側に突出する凸部27が形成されていてもよい。この場合、アンテナ本体11は凸部26上に延在しており、アンテナ本体11の内側端部11aが凸部26上に位置している。一方、アンテナ配線15は凸部27上に延在しており、アンテナ配線15の外側端部15bが凸部27上に位置している。そして、アンテナ本体11の内側端部11aとアンテナ配線15の外側端部15bとは、対向する凸部26及び凸部27上において電気的に接続されている。対向する凸部26及び凸部27の高さは、基板3側の封止用メタル9と基板4側の封止用メタル9とを接触させたとき、アンテナ本体11の内側端部11aとアンテナ配線15の外側端部15bとが接触するように設定される。
Further, as shown in FIG. 12, the substrate 3 is formed with a convex portion 26 that protrudes toward the substrate 4 in the internal space 2, and the convex portion 27 that protrudes toward the substrate 3 in the internal space 2. May be formed. In this case, the antenna main body 11 extends on the convex portion 26, and the inner end 11 a of the antenna main body 11 is located on the convex portion 26. On the other hand, the antenna wiring 15 extends on the convex portion 27, and the outer end 15 b of the antenna wiring 15 is located on the convex portion 27. The inner end portion 11a of the antenna body 11 and the outer end portion 15b of the antenna wiring 15 are electrically connected on the convex portions 26 and the convex portions 27 facing each other. The heights of the convex portions 26 and the convex portions 27 facing each other are such that when the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side are brought into contact with each other, the inner end portion 11a of the antenna body 11 and the antenna. The outer end 15b of the wiring 15 is set so as to come into contact.
また、図13に示されるように、凸部26の側面26aが凹部5の底面5aに対して鈍角を成すように形成されていれば、アンテナ本体11に断線等の損傷が生じるのを確実に防止することができる。同様に、凸部27の側面が基板4の表面4aに対して鈍角を成すように形成されていれば、アンテナ配線15に断線等の損傷が生じるのを確実に防止することができる。
[第3の実施形態] Further, as shown in FIG. 13, if theside surface 26 a of the convex portion 26 is formed so as to form an obtuse angle with respect to the bottom surface 5 a of the concave portion 5, it is ensured that damage such as disconnection occurs in the antenna body 11. Can be prevented. Similarly, if the side surface of the convex portion 27 is formed so as to form an obtuse angle with respect to the surface 4 a of the substrate 4, it is possible to reliably prevent the antenna wiring 15 from being damaged such as disconnection.
[Third Embodiment]
[第3の実施形態] Further, as shown in FIG. 13, if the
[Third Embodiment]
図14に示されるように、第3の実施形態のテラヘルツ波検出器1は、アンテナ本体11とアンテナ配線15との電気的接続において、上述した第1の実施形態のテラヘルツ波検出器1と相違している。すなわち、第3の実施形態のテラヘルツ波検出器1では、一対のアンテナ本体11のそれぞれが凹部5の底面5aから側面5bを介して基板3の表面3aに延在しており、各アンテナ本体11の外側端部11bが基板3の表面3aに位置している。また、一対のアンテナ配線15のそれぞれが各アンテナ本体11の外側端部11bと対向する部分に延在しており、各アンテナ配線15の外側端部15bが各アンテナ本体11の外側端部11bと対向する部分に位置している。そして、アンテナ本体11の外側端部11bとアンテナ配線15の外側端部15bとが電気的に接続されている。
As shown in FIG. 14, the terahertz wave detector 1 of the third embodiment is different from the terahertz wave detector 1 of the first embodiment described above in electrical connection between the antenna body 11 and the antenna wiring 15. is doing. That is, in the terahertz wave detector 1 according to the third embodiment, each of the pair of antenna bodies 11 extends from the bottom surface 5a of the recess 5 to the surface 3a of the substrate 3 via the side surface 5b. The outer end portion 11 b of the substrate 3 is located on the surface 3 a of the substrate 3. Further, each of the pair of antenna wirings 15 extends to a portion facing the outer end portion 11b of each antenna body 11, and the outer end portion 15b of each antenna wiring 15 is connected to the outer end portion 11b of each antenna body 11. Located in the opposite part. The outer end 11b of the antenna body 11 and the outer end 15b of the antenna wiring 15 are electrically connected.
アンテナ本体11の外側端部11bとアンテナ配線15の外側端部15bとは、基板3側の封止用メタル9と基板4側の封止用メタル9との接合と同様に、常温接合、陽極接合及びメタル-メタル接合等によって、接合される。なお、電気的絶縁を図るために、アンテナ本体11の外側端部11bは基板3側の封止用メタル9と離間しており、アンテナ配線15の外側端部15bは基板4側の封止用メタル9と離間している。
The outer end portion 11b of the antenna body 11 and the outer end portion 15b of the antenna wiring 15 are bonded at room temperature and anode, similarly to the bonding of the sealing metal 9 on the substrate 3 side and the sealing metal 9 on the substrate 4 side. Bonding is performed by bonding, metal-metal bonding, or the like. For the purpose of electrical insulation, the outer end 11b of the antenna body 11 is separated from the sealing metal 9 on the substrate 3 side, and the outer end 15b of the antenna wiring 15 is used for sealing on the substrate 4 side. Separated from the metal 9.
以上の第3の実施形態のテラヘルツ波検出器1によっても、上述した第1の実施形態のテラヘルツ波検出器1と同様の効果が奏される。更に、検出波長に応じてアンテナ本体11をより広くすることができる。また、絶縁膜12、抵抗膜13及びボロメータ膜14をアンテナ本体11から熱的に分離すべく、アンテナ配線15をより長くすることができる。
[第4の実施形態] Also by theterahertz wave detector 1 of the third embodiment described above, the same effects as those of the terahertz wave detector 1 of the first embodiment described above are exhibited. Furthermore, the antenna body 11 can be made wider according to the detection wavelength. Further, the antenna wiring 15 can be made longer in order to thermally separate the insulating film 12, the resistance film 13, and the bolometer film 14 from the antenna body 11.
[Fourth Embodiment]
[第4の実施形態] Also by the
[Fourth Embodiment]
図15に示されるように、第4の実施形態のテラヘルツ波検出器1は、反射膜28が形成されている点で、上述した第2の実施形態のテラヘルツ波検出器1と相違している。すなわち、第4の実施形態のテラヘルツ波検出器1は、基板3側からアンテナ本体11にテラヘルツ波を入射させるものであって、基板4の表面4aには、テラヘルツ波の進行方向の下流側においてアンテナ本体11と対向するように反射膜28が形成されている。なお、反射膜28は、基板4における基板3の反対側の表面4bに形成されていてもよい。
As shown in FIG. 15, the terahertz wave detector 1 of the fourth embodiment is different from the terahertz wave detector 1 of the second embodiment described above in that a reflective film 28 is formed. . That is, the terahertz wave detector 1 according to the fourth embodiment is configured to cause the terahertz wave to be incident on the antenna body 11 from the substrate 3 side. The terahertz wave is incident on the surface 4a of the substrate 4 on the downstream side in the traveling direction of the terahertz wave. A reflective film 28 is formed so as to face the antenna body 11. The reflective film 28 may be formed on the surface 4 b of the substrate 4 on the side opposite to the substrate 3.
以上の第4の実施形態のテラヘルツ波検出器1によっても、上述した第1の実施形態のテラヘルツ波検出器1と同様の効果が奏される。更に、反射膜28で反射されたテラヘルツ波がアンテナ本体11に入射するので、テラヘルツ波の検出感度を向上させることができる。
Also by the terahertz wave detector 1 of the fourth embodiment described above, the same effects as those of the terahertz wave detector 1 of the first embodiment described above are exhibited. Furthermore, since the terahertz wave reflected by the reflective film 28 enters the antenna body 11, the terahertz wave detection sensitivity can be improved.
ところで、アンテナ本体11と反射膜28との距離は、検出波長の1/4(例えば検出波長が600μm(0.5THz)であれば150μm)にすることが好ましい。それは、テラヘルツ波を電波として効率良く受信するためには、アンテナ本体11と反射膜28との間で共振させることが効果的だからである。テラヘルツ波検出器1では、アンテナ本体11と反射膜28とが別々の基板3,4に形成されるので、アンテナ本体11と反射膜28との距離を容易に所望の値にすることができる。
Incidentally, the distance between the antenna body 11 and the reflective film 28 is preferably ¼ of the detection wavelength (for example, 150 μm if the detection wavelength is 600 μm (0.5 THz)). This is because it is effective to resonate between the antenna body 11 and the reflective film 28 in order to efficiently receive the terahertz wave as a radio wave. In the terahertz wave detector 1, the antenna body 11 and the reflective film 28 are formed on different substrates 3 and 4, so that the distance between the antenna body 11 and the reflective film 28 can be easily set to a desired value.
なお、テラヘルツ波の進行方向の下流側においてボロメータ膜14と対向するように基板4の表面4a(或いは表面4b)に反射膜28が形成されていてもよい。この場合にも、反射膜28で反射されたテラヘルツ波がボロメータ膜14に入射するので、テラヘルツ波の検出感度を向上させることができる。
In addition, the reflective film 28 may be formed on the surface 4a (or the surface 4b) of the substrate 4 so as to face the bolometer film 14 on the downstream side in the traveling direction of the terahertz wave. Also in this case, since the terahertz wave reflected by the reflecting film 28 enters the bolometer film 14, the terahertz wave detection sensitivity can be improved.
また、図16に示されるように、凸部26の側面26aが、反射膜28と対向する傾斜面とされ、その側面26aにアンテナ本体11が形成されていてもよい。また、図17に示されるように、基板4の表面4aの一部が、アンテナ本体11と対向する傾斜面とされ、その表面4aの一部に反射膜28が形成されていてもよい。これらによれば、アンテナ本体11と反射膜28との距離が、内側から外側に渡って徐々に増加(或いは減少)するので、検出波長の1/4の共振帯域を広げることができる。
[第5の実施形態] Further, as shown in FIG. 16, theside surface 26a of the convex portion 26 may be an inclined surface facing the reflective film 28, and the antenna body 11 may be formed on the side surface 26a. Further, as shown in FIG. 17, a part of the surface 4a of the substrate 4 may be an inclined surface facing the antenna body 11, and a reflective film 28 may be formed on a part of the surface 4a. According to these, since the distance between the antenna body 11 and the reflective film 28 gradually increases (or decreases) from the inside to the outside, it is possible to widen the resonance band of ¼ of the detection wavelength.
[Fifth Embodiment]
[第5の実施形態] Further, as shown in FIG. 16, the
[Fifth Embodiment]
図18に示されるように、第5の実施形態のテラヘルツ波検出器1は、反射膜29が形成されている点で、上述した第2の実施形態のテラヘルツ波検出器1と相違している。すなわち、第5の実施形態のテラヘルツ波検出器1は、基板4側からアンテナ本体11にテラヘルツ波を入射させるものであって、基板3における基板4の反対側の表面3bには、テラヘルツ波の進行方向の下流側においてアンテナ本体11及びボロメータ膜14と対向するように反射膜29が形成されている。なお、基板3の凹部5の底面5aに、ボロメータ膜14と対向するように反射膜29が形成されていてもよい。
As shown in FIG. 18, the terahertz wave detector 1 according to the fifth embodiment is different from the terahertz wave detector 1 according to the second embodiment described above in that a reflective film 29 is formed. . That is, the terahertz wave detector 1 according to the fifth embodiment is configured to cause the terahertz wave to be incident on the antenna body 11 from the substrate 4 side, and the surface 3b of the substrate 3 on the opposite side of the substrate 4 has a terahertz wave. A reflective film 29 is formed so as to face the antenna body 11 and the bolometer film 14 on the downstream side in the traveling direction. A reflective film 29 may be formed on the bottom surface 5 a of the recess 5 of the substrate 3 so as to face the bolometer film 14.
以上の第5の実施形態のテラヘルツ波検出器1によっても、上述した第1の実施形態のテラヘルツ波検出器1と同様の効果が奏される。更に、反射膜29で反射されたテラヘルツ波がアンテナ本体11及びボロメータ膜14に入射するので、テラヘルツ波の検出感度を向上させることができる。
Also by the terahertz wave detector 1 of the fifth embodiment described above, the same effects as the terahertz wave detector 1 of the first embodiment described above are exhibited. Furthermore, since the terahertz wave reflected by the reflecting film 29 is incident on the antenna body 11 and the bolometer film 14, the terahertz wave detection sensitivity can be improved.
また、テラヘルツ波検出器1では、基板3の厚さや凹部5の深さを調節することで、アンテナ本体11と反射膜29との距離、及びボロメータ膜14と反射膜29との距離を容易に所望の値にすることができる。
In the terahertz wave detector 1, the distance between the antenna body 11 and the reflective film 29 and the distance between the bolometer film 14 and the reflective film 29 can be easily adjusted by adjusting the thickness of the substrate 3 and the depth of the recess 5. It can be set to a desired value.
以上、本発明の第1~第5の実施形態について説明したが、本発明は、上記実施形態に限定されるものではない。例えば、テラヘルツ波検出器1は、二次元マトリックス状に複数配置されて使用されてもよい。また、テラヘルツ波の吸収率を向上させるために、アンテナ本体11の表面を粗面にしてもよい。
Although the first to fifth embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments. For example, a plurality of terahertz wave detectors 1 may be arranged and used in a two-dimensional matrix. Further, the surface of the antenna body 11 may be roughened in order to improve the absorption rate of the terahertz wave.
本発明によれば、テラヘルツ波を精度良く検出することができるテラヘルツ波検出器、及びそのようなテラヘルツ波検出器の製造方法を提供することが可能となる。
According to the present invention, it is possible to provide a terahertz wave detector capable of accurately detecting a terahertz wave and a method for manufacturing such a terahertz wave detector.
1…テラヘルツ波検出器、2…内部空間、3…基板(第1の基板)、4…基板(第2の基板)11…アンテナ本体、12…絶縁膜、12a…表面(一方の面)、12b…表面(他方の面)、13…抵抗膜、14…ボロメータ膜、15…アンテナ配線、16…ボロメータ配線、23,24…柱状部材、25…バンプ、26…凸部(第1の凸部)、27…凸部(第2の凸部)、28…反射膜(第1の反射膜)、29…反射膜(第2の反射膜)。
DESCRIPTION OF SYMBOLS 1 ... Terahertz wave detector, 2 ... Internal space, 3 ... Board | substrate (1st board | substrate), 4 ... Board | substrate (2nd board | substrate) 11 ... Antenna body, 12 ... Insulating film, 12a ... Surface (one side), 12b ... surface (the other surface), 13 ... resistive film, 14 ... bolometer film, 15 ... antenna wiring, 16 ... bolometer wiring, 23,24 ... columnar member, 25 ... bump, 26 ... convex (first convex) ), 27... Projection (second projection), 28. Reflection film (first reflection film), 29. Reflection film (second reflection film).
Claims (8)
- 内部空間を形成するように互いに接合された第1の基板及び第2の基板と、
前記第1の基板に形成され、テラヘルツ波を受信して電流に変換するアンテナ本体と、
前記内部空間において前記第2の基板上に空隙を介して支持された絶縁膜と、
前記絶縁膜の一方の面に形成され、前記アンテナ本体で変換された前記電流に応じて熱を発生する抵抗膜と、
前記絶縁膜の他方の面に形成され、前記抵抗膜で発生された前記熱に応じて電気抵抗値が変化するボロメータ膜と、
前記第2の基板に形成され、前記アンテナ本体から前記抵抗膜に前記電流を供給するために前記アンテナ本体及び前記抵抗膜と電気的に接続されたアンテナ配線と、
前記第2の基板に形成され、前記電気抵抗値に応じた信号を取得するために前記ボロメータ膜と電気的に接続されたボロメータ配線と、を備える、テラヘルツ波検出器。 A first substrate and a second substrate joined together to form an internal space;
An antenna body formed on the first substrate for receiving a terahertz wave and converting it into a current;
An insulating film supported on the second substrate via a gap in the internal space;
A resistance film that is formed on one surface of the insulating film and generates heat in response to the current converted by the antenna body;
A bolometer film formed on the other surface of the insulating film, the electric resistance value of which varies according to the heat generated in the resistance film;
An antenna wiring formed on the second substrate and electrically connected to the antenna body and the resistance film to supply the current from the antenna body to the resistance film;
A terahertz wave detector comprising: a bolometer wiring formed on the second substrate and electrically connected to the bolometer film to acquire a signal corresponding to the electric resistance value. - 前記アンテナ配線及び前記ボロメータ配線は、それぞれ、前記第2の基板に立設されて前記絶縁膜を支持する電気伝導性の柱状部材を含む、請求項1記載のテラヘルツ波検出器。 The terahertz wave detector according to claim 1, wherein each of the antenna wiring and the bolometer wiring includes an electrically conductive columnar member that stands on the second substrate and supports the insulating film.
- 前記第1の基板には、前記内部空間において前記第2の基板側に突出する第1の凸部が形成されており、
前記アンテナ本体は、前記第1の凸部上に延在しかつ前記第1の凸部上において前記アンテナ配線と電気的に接続されている、請求項1又は2記載のテラヘルツ波検出器。 The first substrate is formed with a first convex portion projecting toward the second substrate in the internal space,
3. The terahertz wave detector according to claim 1, wherein the antenna body extends on the first convex portion and is electrically connected to the antenna wiring on the first convex portion. - 前記第2の基板には、前記内部空間において前記第1の基板側に突出する第2の凸部が形成されており、
前記アンテナ配線は、前記第2の凸部上に延在しかつ前記第2の凸部上において前記アンテナ本体と電気的に接続されている、請求項1~3のいずれか一項記載のテラヘルツ波検出器。 The second substrate is formed with a second protrusion that protrudes toward the first substrate in the internal space,
The terahertz according to any one of claims 1 to 3, wherein the antenna wiring extends on the second convex portion and is electrically connected to the antenna body on the second convex portion. Wave detector. - 前記アンテナ本体と前記アンテナ配線とは、前記内部空間においてバンプを介して互いに電気的に接続されている、請求項1又は2記載のテラヘルツ波検出器。 The terahertz wave detector according to claim 1 or 2, wherein the antenna body and the antenna wiring are electrically connected to each other via bumps in the internal space.
- 前記第1の基板側から前記アンテナ本体に前記テラヘルツ波が入射する場合には、前記第2の基板には、前記テラヘルツ波の進行方向の下流側において前記アンテナ本体及び前記ボロメータ膜の少なくとも一方と対向するように第1の反射膜が形成されている、請求項1~5のいずれか一項記載のテラヘルツ波検出器。 When the terahertz wave is incident on the antenna body from the first substrate side, the second substrate has at least one of the antenna body and the bolometer film on the downstream side in the traveling direction of the terahertz wave. The terahertz wave detector according to any one of claims 1 to 5, wherein a first reflective film is formed so as to face each other.
- 前記第2の基板側から前記アンテナ本体に前記テラヘルツ波が入射する場合には、前記第1の基板には、前記テラヘルツ波の進行方向の下流側において前記アンテナ本体及び前記ボロメータ膜の少なくとも一方と対向するように第2の反射膜が形成されている、請求項1~5のいずれか一項記載のテラヘルツ波検出器。 When the terahertz wave is incident on the antenna body from the second substrate side, the first substrate has at least one of the antenna body and the bolometer film on the downstream side in the traveling direction of the terahertz wave. The terahertz wave detector according to any one of claims 1 to 5, wherein a second reflective film is formed so as to face each other.
- テラヘルツ波を受信して電流に変換するアンテナ本体と、前記アンテナ本体で変換された前記電流に応じて熱を発生する抵抗膜と、前記抵抗膜で発生された前記熱に応じて電気抵抗値が変化するボロメータ膜と、を備えるテラヘルツ波検出器の製造方法であって、
内部空間を形成するように互いに接合される第1の基板及び第2の基板を準備する第1の工程と、
前記第1の工程の後に、前記アンテナ本体を前記第1の基板に形成する第2の工程と、
前記第1の工程の後に、絶縁膜、前記絶縁膜の一方の面に形成された前記抵抗膜、及び前記絶縁膜の他方の面に形成された前記ボロメータ膜を、前記内部空間に位置するように前記第2の基板上に空隙を介して支持させると共に、前記アンテナ本体から前記抵抗膜に前記電流を供給するために前記抵抗膜と電気的に接続されたアンテナ配線、及び前記電気抵抗値に応じた信号を取得するために前記ボロメータ膜と電気的に接続されたボロメータ配線を、前記第2の基板に形成する第3の工程と、
前記第2の工程及び前記第3の工程の後に、前記内部空間を形成するように前記第1の基板と前記第2の基板とを接合すると共に、前記アンテナ本体と前記アンテナ配線とを電気的に接続する第4の工程と、を含む、テラヘルツ波検出器の製造方法。 An antenna body that receives a terahertz wave and converts it into a current, a resistance film that generates heat according to the current converted by the antenna body, and an electrical resistance value according to the heat generated at the resistance film A terahertz wave detector comprising a bolometer film that changes,
A first step of preparing a first substrate and a second substrate that are bonded together to form an internal space;
A second step of forming the antenna body on the first substrate after the first step;
After the first step, the insulating film, the resistance film formed on one surface of the insulating film, and the bolometer film formed on the other surface of the insulating film are positioned in the internal space. And an antenna wiring electrically connected to the resistance film for supplying the current from the antenna body to the resistance film, and an electric resistance value. Forming a bolometer wiring electrically connected to the bolometer film on the second substrate to obtain a corresponding signal;
After the second step and the third step, the first substrate and the second substrate are joined so as to form the internal space, and the antenna body and the antenna wiring are electrically connected. And a fourth step of connecting to the terahertz wave detector.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2010109961A JP2011237312A (en) | 2010-05-12 | 2010-05-12 | Terahertz wave detection apparatus and manufacturing method therefor |
JP2010-109961 | 2010-05-12 |
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WO2011142191A1 true WO2011142191A1 (en) | 2011-11-17 |
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PCT/JP2011/058453 WO2011142191A1 (en) | 2010-05-12 | 2011-04-01 | Terahertz wave detector, and process for production thereof |
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JP (1) | JP2011237312A (en) |
TW (1) | TW201144778A (en) |
WO (1) | WO2011142191A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2513170A (en) * | 2013-04-18 | 2014-10-22 | Univ Ljubljana | A detection system and a method of making a detection system |
WO2016114291A1 (en) * | 2015-01-14 | 2016-07-21 | 浜松ホトニクス株式会社 | THz BOLOMETER DETECTOR |
CN110006534A (en) * | 2019-04-11 | 2019-07-12 | 南京大学 | A kind of preparation method of the micro-nano bolometer for Terahertz detection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6292140B1 (en) * | 1999-11-03 | 2001-09-18 | Hypres, Inc. | Antenna for millimeter-wave imaging and bolometer employing the antenna |
US6329655B1 (en) * | 1998-10-07 | 2001-12-11 | Raytheon Company | Architecture and method of coupling electromagnetic energy to thermal detectors |
JP2006304290A (en) * | 2005-04-18 | 2006-11-02 | Commiss Energ Atom | Bolometric detector, and device for detecting submillimetric and millimetric electromagnetic waves by using the same |
JP2008039684A (en) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | Solid-state image sensing element and manufacturing method therefor and imaging device |
-
2010
- 2010-05-12 JP JP2010109961A patent/JP2011237312A/en active Pending
-
2011
- 2011-04-01 WO PCT/JP2011/058453 patent/WO2011142191A1/en active Application Filing
- 2011-04-12 TW TW100112678A patent/TW201144778A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6329655B1 (en) * | 1998-10-07 | 2001-12-11 | Raytheon Company | Architecture and method of coupling electromagnetic energy to thermal detectors |
US6292140B1 (en) * | 1999-11-03 | 2001-09-18 | Hypres, Inc. | Antenna for millimeter-wave imaging and bolometer employing the antenna |
JP2006304290A (en) * | 2005-04-18 | 2006-11-02 | Commiss Energ Atom | Bolometric detector, and device for detecting submillimetric and millimetric electromagnetic waves by using the same |
JP2008039684A (en) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | Solid-state image sensing element and manufacturing method therefor and imaging device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2513170A (en) * | 2013-04-18 | 2014-10-22 | Univ Ljubljana | A detection system and a method of making a detection system |
GB2513170B (en) * | 2013-04-18 | 2020-07-08 | Univ Of Ljubljana | Bolometric detection system with reflecting cavity |
WO2016114291A1 (en) * | 2015-01-14 | 2016-07-21 | 浜松ホトニクス株式会社 | THz BOLOMETER DETECTOR |
US10393649B2 (en) | 2015-01-14 | 2019-08-27 | Hamamatsu Photonics K.K. | THz bolometer detector |
CN110006534A (en) * | 2019-04-11 | 2019-07-12 | 南京大学 | A kind of preparation method of the micro-nano bolometer for Terahertz detection |
Also Published As
Publication number | Publication date |
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TW201144778A (en) | 2011-12-16 |
JP2011237312A (en) | 2011-11-24 |
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