WO2011121163A1 - Dispositif de génération thermoélectrique, générateur thermoélectrique et procédé de fabrication dudit dispositif de génération thermoélectrique - Google Patents

Dispositif de génération thermoélectrique, générateur thermoélectrique et procédé de fabrication dudit dispositif de génération thermoélectrique Download PDF

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Publication number
WO2011121163A1
WO2011121163A1 PCT/ES2011/070215 ES2011070215W WO2011121163A1 WO 2011121163 A1 WO2011121163 A1 WO 2011121163A1 ES 2011070215 W ES2011070215 W ES 2011070215W WO 2011121163 A1 WO2011121163 A1 WO 2011121163A1
Authority
WO
WIPO (PCT)
Prior art keywords
suspended mass
massive
massive frame
frame
thermoelectric
Prior art date
Application number
PCT/ES2011/070215
Other languages
English (en)
Spanish (es)
Inventor
Albert TARANCÓN RUBIO
Diana DÁVILA PINEDA
Neus Sabaté Vizcarra
Álvaro SAN PAULO HERNANDO
Marta FERNÁNDEZ REGÚLEZ
Luis Fonseca Chacharo
Original Assignee
Consejo Superior De Investigaciones Científicas (Csic)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior De Investigaciones Científicas (Csic) filed Critical Consejo Superior De Investigaciones Científicas (Csic)
Publication of WO2011121163A1 publication Critical patent/WO2011121163A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0215—Compact construction
    • G01J5/022—Monolithic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples

Definitions

  • the present invention relates to the field of microelectronics and materials, more specifically to the field of thermoelectric generation by means of silicon integrable devices.
  • the object of the invention consists of a device of small size and integrable in Si for the generation of electrical energy from temperature gradients, a generator that includes several of said devices and the method of manufacturing the device.
  • thermoelectric generators The difficulty in miniaturization and integration through microelectronic technology of thermoelectric generators lies mainly in three aspects:
  • thermoelectric - Poor thermoelectric properties of materials traditionally used in the microelectronic industry (silicon and germanium, basically). - Difficulty in generating temperature gradients, on a micrometric scale, connectable with each other using a material thermoelectric
  • thermoelectric generators based on two different materials (type p and type n, connected in parallel thermally) due to thermal problems and high electrical contact resistance.
  • thermoelectric generator integrable in silicon but they offer low performance and generators based on other materials but not integrable in silicon (based on tellurides, bismuths, etc.).
  • the object of the present invention is a device, more specifically a planar microdevice, for generating electricity from thermal gradients, integrable in silicon and compatible with microelectronic technology where thermal differences are generated by the thermal contrast established between a small mass of Silicon suspended in the air and a perimeter silicon frame in thermal contact with the massive underlying silicon substrate of low thermal inertia in turn in contact with a heat source.
  • the manufacturing process of said device is also described.
  • the present invention solves all the problems mentioned in the previous section allowing the efficient integration of thermoelectric generators in the microelectronic industry.
  • the different solutions to the different problems raised are achieved respectively, by: - Use of typical materials of the electronics industry in nanometric scale (silicon nanowires, thin layers of germanium or similar).
  • the present invention is not restricted to this type of materials but extends to nano-sized objects of other materials (semiconductors, oxides or any with good thermoelectric properties in the nanoscale).
  • thermoelectric material thermally insulated from a massive framework that allow thermal gradients to be generated. These thermal gradients are used to generate electricity by connecting the thermally insulated structure and the massive frame with a nanostructured thermoelectric material. This configuration is planar which allows greater modularity, integrability and connectivity in series or parallel.
  • thermoelectric material type p or type n
  • the possible use of the material with which the structure is microfabricated as a thermoelectric material makes it possible to reduce contact resistance.
  • the device object of the invention has a great variety of industrial applications since it is a generic device for converting residual heat into electrical energy.
  • its modular nature allows its connection in series and parallel and can cover a wide range of powers.
  • the object of the invention becomes especially useful in the field of microsystems feeding for applications in intelligence. environmental, safety, health or food. Its passive nature allows it to use residual heat from other processes to convert them into electrical energy, thus being a generating device based on the so-called “harvesting" energy.
  • the device object of the invention consists essentially of a massive rectangular frame inside which a mass is suspended by a nanostructure, which can be defined by a high density of nanowires, a mesh of nanowires or a nanometric membrane with or without tracks nanometers defined in the membrane; all defined on a layer of electrical insulator, which can be added or be part of the wafer on which the elements of the device are defined as in SOI wafers, with a hollow inside to avoid contact with the suspended mass.
  • the device object of the invention allows its use as a “harvesting" (passive) system that can be integrated into silicon with good performance and as a microsystem feed system.
  • microgenerator On which the microgenerator is supported. In particular, it temporarily supports the suspended mass during the manufacture of the microgenerator.
  • Said elements that make up the device object of the invention can be replicated to form a matrix of several devices connected to each other to form a thermoelectric generator of higher performance; through the interconnection of several devices, greater efficiency in terms of voltage and intensity is achieved.
  • the elements that make up the device can be modified or supplemented as an option to increase energy efficiency by entering:
  • inter-digitized design of the massive silicon frame and the suspended mass of the same material that allows to increase the effective contact area of the nanostructured material. That is, the inter-digitized design increases the effective contact zone of the connectors between the massive frame and the suspended mass, per unit area of the device.
  • Anchoring elements strips and pillars, preferably of silicon, between the massive frame and the suspended mass for anchoring the nanostructured material.
  • the implementation of said anchoring elements increases the space between the masses, increasing the useful temperature difference between them. That is, it increases the effective length of the active area of the device and the thermal gradient generated between the suspended mass and the massive frame.
  • These elements also allow to overcome the possible technological limitation of the physical length of the nanostructured material, thus achieving a greater effective length thereof. Such modifications can be combined in the same device, combining the advantages of increasing the contact area and the effective length of the active area of the device.
  • the present invention is of particular interest to the microelectronic industry that possesses the necessary techniques for the manufacture of the microgenerator as well as for a multitude of nearby industries that require autonomy to portable systems or microsystems. Further, the microgenerators of the present invention can be coupled to refrigeration systems, systems with surplus heat or systems where temperature differences occur naturally to meet power supply needs.
  • Figure 1 Shows perspective, elevation and profile views of the device object of the invention.
  • Figure 2. Shows a perspective view of an array of several interconnected devices.
  • FIGS 3A and 3B.- They show the manufacturing process of the device object of the invention without and with anchoring elements, respectively.
  • Figure 4. Shows perspective, elevation and profile views of the device Object of the invention with intermediate anchoring elements between the massive frame and the suspended mass.
  • Figure 5. Shows perspective, elevation and profile views of the device object of the invention with an inter-digitized design of the massive silicon frame and the suspended mass of the same material.
  • thermoelectric microgenerator has a wide variety of applications in different industrial sectors. In general, where there are excess residual heat or derivatives of other processes and you want to improve the energy efficiency of the system
  • the suspended mass (4) inside the massive frame (3), the massive frame itself (3) and the intermediate anchoring elements (7) are of a base material compatible with the microelectronic industry and preferably in wafer format;
  • an insulating layer (2) of small electrical insulating material io is required (since it is usually also thermal insulating material) on which to manufacture both the mass (4) and the massive frame (3) and the anchoring elements ( 7), such as the oxide layer in silicon wafers type SOI (Silicon On Insulator).
  • SOI Silicon On Insulator
  • the nanostructured thermoelectric material of the contacts (5) subjected to thermal gradient is of nanostructured silicon in forms such as nanowires, thin layer or nano- or meso-porous material.
  • thermoelectric material The manufacture of the nanostructured material as well as its implementation varies according to the specific thermoelectric material. These are processes such as: the VLS (Steam-Liquid-Solid) growth of nanowires for the case of silicon; the PLD (Pulsed Laser Deposition) or CVD (Chemical
  • microgenerator devices (1) that are connected to each other by means of connections defined by the electrical contacts (6) defined respectively the massive frame (3) and the suspended mass (4) that collect the electric current generated in the device (1) to give rise to a generator.
  • Said electrical contacts (6) are of materials with low resistance of electrical and thermal contact in relation to the thermoelectric material and good electrical conductivity, in this exemplary embodiment and since silicon has been used materials such as W or Pt are preferably used for said contacts electric (6).
  • the connection of various devices is carried out by means of high thermal resistance structures such as beams or bridges (as seen in Figure 2 ). This type of structure is manufactured together with the definition of the massive frame (3), the suspended mass (4) and, where appropriate, the intermediate anchoring elements (7), preferably with the same type of microelectronic technology ( wet / dry prints, photolithography, etc).

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Silicon Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un générateur thermoélectrique pouvant être intégré monobloc dans du silicium, dans lequel les différences thermiques sont générées par l'inertie thermique différente d'une petite masse de silicium en suspension dans l'air et une masse de silicium en contact avec une source de chaleur. Ladite différence thermique est convertie en une tension thermoélectrique à l'aide d'un matériau nanostructuré de basse conductivité thermique qui connecte les deux masses. L'invention concerne également un procédé de fabrication dudit générateur thermoélectrique.
PCT/ES2011/070215 2010-03-30 2011-03-29 Dispositif de génération thermoélectrique, générateur thermoélectrique et procédé de fabrication dudit dispositif de génération thermoélectrique WO2011121163A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ESP201030486 2010-03-30
ES201030486A ES2372210B1 (es) 2010-03-30 2010-03-30 Dispositivo de generación termoeléctrica, generador termoeléctrico y método de fabricación de dicho dispositivo de generación termoeléctrica.

Publications (1)

Publication Number Publication Date
WO2011121163A1 true WO2011121163A1 (fr) 2011-10-06

Family

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Family Applications (1)

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PCT/ES2011/070215 WO2011121163A1 (fr) 2010-03-30 2011-03-29 Dispositif de génération thermoélectrique, générateur thermoélectrique et procédé de fabrication dudit dispositif de génération thermoélectrique

Country Status (2)

Country Link
ES (1) ES2372210B1 (fr)
WO (1) WO2011121163A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2521942A (en) * 2014-12-23 2015-07-08 Daimler Ag Air intake system for an internal combustion engine of a vehicle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090020148A1 (en) * 2007-07-20 2009-01-22 Boukai Akram Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires
EP2063241A1 (fr) * 2007-11-12 2009-05-27 Commissariat à l'Energie Atomique Détecteur de rayonnement électromagnétique à connexion par nanofil et procédé de réalisation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090020148A1 (en) * 2007-07-20 2009-01-22 Boukai Akram Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires
EP2063241A1 (fr) * 2007-11-12 2009-05-27 Commissariat à l'Energie Atomique Détecteur de rayonnement électromagnétique à connexion par nanofil et procédé de réalisation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG W ET AL.: "A new type of low power thermoelectric micro-generator fabricated by nanowire array thermoelectric material.", MICROELECTRONIC ENGINEERING, 1 April 2005 (2005-04-01), AMSTERDAM, NL. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2521942A (en) * 2014-12-23 2015-07-08 Daimler Ag Air intake system for an internal combustion engine of a vehicle

Also Published As

Publication number Publication date
ES2372210A1 (es) 2012-01-17
ES2372210B1 (es) 2013-02-15

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