WO2011117052A1 - Composant optoélectronique - Google Patents

Composant optoélectronique Download PDF

Info

Publication number
WO2011117052A1
WO2011117052A1 PCT/EP2011/053182 EP2011053182W WO2011117052A1 WO 2011117052 A1 WO2011117052 A1 WO 2011117052A1 EP 2011053182 W EP2011053182 W EP 2011053182W WO 2011117052 A1 WO2011117052 A1 WO 2011117052A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic component
protective layer
potting compound
semiconductor chip
lead frame
Prior art date
Application number
PCT/EP2011/053182
Other languages
German (de)
English (en)
Inventor
Johann Hochmuth
Simon Jerebic
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2011117052A1 publication Critical patent/WO2011117052A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a
  • Optoelectronic component in particular it relates to an optoelectronic component with a lead frame.
  • An example of such an optoelectronic component is a light-emitting diode, or a
  • LED light emitting diode
  • Component has a radiation-emitting semiconductor chip, which is applied to a lead frame (leadframe).
  • a potting compound is applied over the lead frame, which can serve different functions, such as a protection of the semiconductor chip or a scattering or bundling of radiation emitted by the semiconductor chip radiation.
  • the lead frame serves to provide an electrical connection to the semiconductor chip. He usually has a metal, for example. A good conductive metal, such as copper.
  • the lead frame is electrically connected to the semiconductor chip via a lead, such as a bonding wire. It is problematic when the lead frame is exposed to effects such as corrosion. If the metal present in the lead frame corrodes, then a
  • connection point to the supply line eg. By loosening a solder joint. Thus, the electrical contact is interrupted, which can lead to a malfunction or failure of the optoelectronic device.
  • the present invention is based on the problem to provide an optoelectronic device whose electrical connection is less prone to a
  • optoelectronic component have a metallic
  • Leadframe On the lead frame, a semiconductor chip is applied.
  • the semiconductor chip encloses a potting compound. Between the potting compound and the lead frame is a
  • Protective layer provided, wherein the protective layer has a lower gas permeability than the potting compound.
  • the potting compound serves - in addition to a protection of the semiconductor chip - as an optical element for a radiation emitted by the semiconductor chip radiation. It fulfills optical functions, such as, for example, a dispersion or a
  • Bundling the radiation It is characterized by transparency in the range of emitted radiation.
  • the protective layer serves as corrosion protection for the lead frame. For this function, it is important that it prevents, as far as possible, the transport of molecules that are on the lead frame.
  • Corrosion can be caused by gases such as hydrogen sulfide (H2S), oxygen (O2) or water vapor (H2O). It is advantageous that the protective layer prevents the transport of molecules stronger than done by the potting compound, because the gas permeability of the protective layer is less than the gas permeability of the potting compound.
  • gases such as hydrogen sulfide (H2S), oxygen (O2) or water vapor (H2O).
  • the gas permeability refers to the property of a material, for example a glassy or an amorphous solid, to allow gases to pass through.
  • the oxygen (C> 2 ⁇ ) or hydrogen (H + -) is below the gas permeability understood permeability.
  • Gas permeability is a temperature dependent quantity.
  • Gas permeability is a temperature dependent quantity.
  • Protective layer can be selected that in particular has a low gas permeability and thus a high protective effect.
  • the potting compound can be selected in particular with regard to its optical properties.
  • suitable temperature and radiation stability can be selected.
  • the gas permeability can largely be ignored or secondary.
  • Protective layer under standard conditions at least ten times lower gas permeability than the potting compound.
  • the protective layer achieves a higher corrosion-inhibiting effect than the potting compound.
  • Protective layer on a polymer This can be, for example, a crosslinked polymer. This will make a simple processing of the _
  • Epoxy resin comes in many
  • the lead frame can be configured as a reflector.
  • the lead frame can be configured as a reflector.
  • TiO 2 titanium oxide (TiO 2) molecules, or particles of TiO 2
  • a matrix material such as epoxy resin
  • the potting compound comprises silicone. This material is characterized by its transparency in the range of visible light as well as the ease of processing in the production of the
  • silicone has a high radiation resistance in the range of visible light and adjacent spectral ranges, so that, for example, there is no turbidity of the potting compound.
  • the potting compound can also have a silicone-based hybrid, or a corresponding mixture.
  • the potting compound has dispersed scattering particles.
  • the scattering particles can be to Ti02 _ molecules or particles. As a result, in particular a scattering of the radiation generated by the optoelectronic semiconductor chip is effected.
  • the leadframe includes a metal having a standard electrode potential of not more than one volt. With the standard electrode potential, a redox potential of the existing in the lead frame
  • Standard electrode potential metals Based on the standard electrode potential metals are classified in terms of their property as base or noble metals.
  • the reference value (zero point) is the electric potential of a normal hydrogen electrode under a gas pressure of 1 bar at 25 °.
  • Standard electrode potentials for some metals present in lead frames are:
  • the lead frame in particular has a metal which is available at low cost, while particularly noble, i. E. against corrosion inert metals can be dispensed with.
  • the provision of noble metals is unnecessary by providing the protective layer.
  • the metal is a highly reflective metal for the visible waveband. This means that the metal has a reflection coefficient of greater than 0.80 from a wavelength of 400 nm.
  • the lead frame contributes to the reflection of .
  • the metal is silver, which has a very high reflectivity with relatively high corrosion resistance.
  • the metal is on a surface of the casting compound facing the
  • Part of the lead frame may, for example, have a good conductive material, such as copper (Cu) or an alloy or a
  • Optoelectronic semiconductor chip a light emitting diode.
  • Fig. 1 shows a first embodiment of a
  • Fig. 2 shows a second embodiment of a
  • Optoelectronic device and Fig. 3 is a plan view of the second embodiment with omission of the potting compound. _
  • Fig.l shows a first embodiment of an optoelectronic component 100.
  • the optoelectronic component has a lead frame 102, on which an optoelectronic semiconductor chip 104 is applied.
  • the optoelectronic semiconductor chip 104 is of a
  • Encapsulation compound 106 enclosed. It is between the
  • Potting compound 106 and the lead frame a protective layer 108 is provided.
  • the ladder frame 102 is used for electronic
  • Semiconductor chip 104 emits radiation, in particular in
  • the leadframe 102 will therefore become one
  • highly reflective metal such as, for example, have silver, for example, by being coated with a silver layer.
  • Silver is also a good electrical conductor.
  • the radiation emitted by the semiconductor chip 104 is thus in particular via the potting 106th
  • the potting compound 106 serves as an optical
  • the potting compound 106 is as resistant as possible to the emitted radiation.
  • the emitted radiation is radiation in the visible range, ultraviolet or infrared radiation
  • silicone is, for example, silicone or a silicone-based material as a potting compound into consideration.
  • the protective layer 108 is laterally of the
  • the properties of the protective layer 108 are selected particularly with regard to the property as a corrosion-inhibiting layer.
  • the protective layer can additionally scattering particles, such as Ti02 _ 0
  • Reflectivity of the lead frame 102 without protective layer 108 thus also fulfills the function of a reflectivity-enhancing layer.
  • FIG. 2 shows a second embodiment of an optoelectronic component 200.
  • Embodiment basically has a similar to the first embodiment of FIG. 1 construction. It may be formed according to the described possible embodiments and variations of the first embodiment. Essentially, the second differs
  • the main body 202 corresponds to a support for the remaining elements of the optoelectronic component 200 with a housing for the protection thereof.
  • the main body 202 may be made in one piece or in several parts.
  • the main body 202 is formed by molding a carrier or the lead frame 102 with a plastic material. In this case, the materials for the main body 202 of a variety of known from the semiconductor manufacturing,
  • Be considered optoelectronic semiconductor device can use suitable materials with a high
  • Reflection coefficients be selected. As a result, for example, the emission power of the optoelectronic component 200 can be increased. It is conceivable that the main body 202 or parts of the main body 202 are produced by an injection molding process.
  • the main body 202 encloses laterally surrounding the lead frame 102.
  • an optoelectronic semiconductor chip is applied, which is fastened via a connecting layer 204 on the lead frame 102.
  • the bonding layer 204 may be an adhesive, for example a conductive adhesive.
  • connection layer 204 a solder connection.
  • the solder connection produces an electrical contact between the optoelectronic semiconductor chip 104 and the leadframe 102.
  • the semiconductor chip 104 is covered by a potting compound 106.
  • the potting compound 106 also covers parts of the main body 202. Between the potting compound 106 and the
  • a protective layer 108 is provided.
  • the protective layer laterally encloses the semiconductor chip 104.
  • a protective layer 108 is provided in the main body 202.
  • the contact terminal 206 provided.
  • the contact terminal 206 is connected via a contact connection 208 to the top side of the semiconductor chip 104 facing the potting compound 208
  • the contact connection 208 is, for example, a
  • Protective layer 108 is also applied over the part of the contact terminal 206, where it is connected to the contact connection 208. The junction between
  • Contact connection 206 and contact connection 208 consists, for example, of a soldering joint (wedge), which is likewise to be protected against corrosion and the resulting separation of the connection.
  • the joint is protected by covering it with the protective layer 108 well before separation of the electrical connection, whereby a possible cause of malfunction of the
  • Embodiment omitting the potting compound.
  • the main body 202 Shown is the main body 202, which has a depression in which the optoelectronic semiconductor chip 104 is introduced.
  • the main body has a variety of
  • Component 200 for example, to be mounted on a printed circuit board (PCB).
  • PCB printed circuit board
  • the semiconductor chip 104 is laterally of a
  • the leadframe is thus protected from corrosion in the direction of the radiation outcoupling side.
  • the radiation-outcoupling side of the semiconductor chip 104 is exemplified
  • the semiconductor chip 104 is in the second embodiment via a so-called bondpad and a contact connection 208, for example.
  • Bonding wire connected to the contact terminal 206.
  • a second contact terminal 302 is shown, with which the circuit board can be electrically contacted.
  • the optoelectronic component was the

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Le composant optoélectronique (100) selon l'invention comprend un cadre conducteur métallique (102). Une puce semi-conductrice (104) est posée sur le cadre conducteur (102). Une masse de scellement (106) entoure la puce semi-conductrice (104). Entre la masse de scellement (106) et le cadre conducteur (102) est disposée une couche protectrice (108), la couche protectrice (108) présentant une perméabilité aux gaz inférieure à celle de la masse de scellement (106).
PCT/EP2011/053182 2010-03-26 2011-03-03 Composant optoélectronique WO2011117052A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010003321A DE102010003321A1 (de) 2010-03-26 2010-03-26 Optoelektronisches Bauelement
DE102010003321.9 2010-03-26

Publications (1)

Publication Number Publication Date
WO2011117052A1 true WO2011117052A1 (fr) 2011-09-29

Family

ID=43858100

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/053182 WO2011117052A1 (fr) 2010-03-26 2011-03-03 Composant optoélectronique

Country Status (3)

Country Link
DE (1) DE102010003321A1 (fr)
TW (1) TW201143174A (fr)
WO (1) WO2011117052A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9541254B2 (en) 2012-09-13 2017-01-10 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013112886A1 (de) 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
DE102014101154A1 (de) * 2014-01-30 2015-07-30 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung
DE102015109324A1 (de) * 2015-06-11 2016-12-15 Osram Opto Semiconductors Gmbh Verfahren und Anordnung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050127377A1 (en) * 2001-11-30 2005-06-16 Karlheinz Arndt Optoelectronic component
US20070126019A1 (en) * 2003-11-04 2007-06-07 Shin-Etsu Handotai Co., Ltd. Light emitting device
JP2007281218A (ja) * 2006-04-07 2007-10-25 Renesas Technology Corp 発光ダイオードおよびその製造方法
US20080218759A1 (en) * 2007-03-08 2008-09-11 Sensors For Medicine And Science, Inc. Light emitting diode for harsh environments
US20090010017A1 (en) * 2007-07-04 2009-01-08 Nichia Corporation Light emitting device
WO2009157288A1 (fr) * 2008-06-25 2009-12-30 シャープ株式会社 Dispositif émetteur de lumière et son procédé de production

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1854831A4 (fr) * 2005-02-23 2014-11-19 Mitsubishi Chem Corp Element de composant electroluminescent a semiconducteur, son procede de fabrication et composant electroluminescent l'utilisant
RU2489774C2 (ru) * 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050127377A1 (en) * 2001-11-30 2005-06-16 Karlheinz Arndt Optoelectronic component
US20070126019A1 (en) * 2003-11-04 2007-06-07 Shin-Etsu Handotai Co., Ltd. Light emitting device
JP2007281218A (ja) * 2006-04-07 2007-10-25 Renesas Technology Corp 発光ダイオードおよびその製造方法
US20080218759A1 (en) * 2007-03-08 2008-09-11 Sensors For Medicine And Science, Inc. Light emitting diode for harsh environments
US20090010017A1 (en) * 2007-07-04 2009-01-08 Nichia Corporation Light emitting device
WO2009157288A1 (fr) * 2008-06-25 2009-12-30 シャープ株式会社 Dispositif émetteur de lumière et son procédé de production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9541254B2 (en) 2012-09-13 2017-01-10 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same

Also Published As

Publication number Publication date
DE102010003321A1 (de) 2011-09-29
TW201143174A (en) 2011-12-01

Similar Documents

Publication Publication Date Title
DE19829197C2 (de) Strahlungsaussendendes und/oder -empfangendes Bauelement
EP2396832B1 (fr) Dispositif semi-conducteur optoélectronique encapsulé à couche d'arrêt brasée, et procédé correspondant
DE102007029369A1 (de) Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
EP2617070A1 (fr) Composant optoélectronique et son procédé de fabrication
EP2047526A1 (fr) Ensemble d'éclairage
DE102007001706A1 (de) Gehäuse für optoelektronisches Bauelement und Anordnung eines optoelektronischen Bauelementes in einem Gehäuse
DE102017111706A1 (de) Lichtemissionsvorrichtung
WO2011117052A1 (fr) Composant optoélectronique
DE102013212247A1 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE102004047640A1 (de) Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
WO2012175569A1 (fr) Composant semi-conducteur optoélectronique et son procédé de fabrication
EP2619859B1 (fr) Boîtier pour composant semi-conducteur optoélectronique
EP2452547A1 (fr) Composant électronique
DE102005063106A1 (de) Optoelektronischer Halbleiterchip und optoelektronisches Bauelement mit solch einem Halbleiterchip
DE102013207111B4 (de) Optoelektronisches Bauelement
DE102016103354A1 (de) Optoelektronisches bauteil mit einem leiterrahmen
DE102014206995A1 (de) Optoelektronisches Halbleiterelement, optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterelementen
WO2021185598A1 (fr) Boîtier pour composant semi-conducteur optoélectronique et composant semi-conducteur optoélectronique
DE102014101154A1 (de) Optoelektronische Anordnung
DE102019220215A1 (de) Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102019100612A1 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
WO2020030504A1 (fr) Composant optoélectronique comportant une couche de recouvrement multifonctionnelle et procédé de fabrication correspondant
DE102018131775A1 (de) Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements
WO2018024705A1 (fr) Module à multiples puces
EP2641278A1 (fr) Composant semi-conducteur optoélectronique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11706588

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11706588

Country of ref document: EP

Kind code of ref document: A1