WO2011102201A1 - Application method and application device - Google Patents
Application method and application device Download PDFInfo
- Publication number
- WO2011102201A1 WO2011102201A1 PCT/JP2011/051616 JP2011051616W WO2011102201A1 WO 2011102201 A1 WO2011102201 A1 WO 2011102201A1 JP 2011051616 W JP2011051616 W JP 2011051616W WO 2011102201 A1 WO2011102201 A1 WO 2011102201A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- coating
- coating liquid
- wafer
- nozzle
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
Definitions
- the present invention relates to a coating method and a coating apparatus for coating a substrate with a coating liquid.
- a coating solution such as a resist solution is generally applied to a semiconductor wafer (hereinafter referred to as “wafer”) by a spin coating method.
- wafer a semiconductor wafer
- the spin chuck is rotated, and the coating liquid is supplied to the center of the wafer from the nozzle, and the coating liquid is stretched outward by centrifugal force to extend the coating liquid over the entire wafer surface. Is.
- Patent Document 1 proposes a technique of applying a coating solution to a square substrate using a capillary phenomenon.
- a capillary coating liquid outflow path extending obliquely upward is provided in the coating liquid tank, and the coating liquid in the coating liquid tank rises up the coating liquid outflow path by capillary action and flows out from the tip thereof, and flows onto the substrate. It is to apply.
- the amount of the coating liquid flowing out from the coating liquid outflow path is adjusted according to the difference between the liquid surface height in the coating liquid tank and the height of the tip of the coating liquid outflow path. For this reason, in order to apply the coating liquid with a uniform film thickness to the substrate, it is necessary to keep the liquid level in the coating liquid tank and the height of the tip of the coating liquid outflow path constant. However, the amount of the coating liquid flowing out from the coating liquid outflow path due to capillary action is extremely small, and in reality, the liquid level in the coating liquid tank is always adjusted to be constant while one substrate is applied. It is difficult.
- the present invention has been made under such circumstances, and provides a technique capable of reducing the amount of coating liquid and reducing the size of the apparatus and obtaining high uniformity in the thickness of the coating film on the substrate. There is to do.
- the present invention provides a method for forming a coating film by supplying a coating solution to a substrate.
- the coating nozzle and the substrate are moved relative to each other, and the coating liquid is drawn from the discharge port by capillary action to the substrate. It is applied. For this reason, the coating liquid is not scattered and wasted, the amount of the coating liquid can be saved, and the apparatus can be miniaturized. Furthermore, since the substrate on which the coating solution is applied is rotated at a rotational speed at which the coating solution on the substrate does not scatter, the uniformity of the coating film thickness can be improved.
- the coating apparatus 1 includes a spin chuck 2 configured to hold a substrate, for example, a wafer W horizontally from the back side, and to be rotatable about a vertical axis in a processing container 10.
- the spin chuck 2 forms a substrate holding unit for sucking and holding the wafer W.
- the spin chuck 2 has a substantially disk-like table 21 that holds the wafer W horizontally, and a rotary shaft connected to the center of the lower surface of the table 21. 22.
- the table 21 is configured to hold the wafer W by vacuum suction or electrostatic suction, for example.
- reference numeral 10 a denotes a transfer port for the wafer W.
- a gas supply mechanism 3 that also serves as a liquid-repellent application liquefaction mechanism is provided so as to face the wafer W held by the spin chuck 2.
- the repellent coating liquefaction mechanism controls the contact angle of the coating solution with respect to the wafer W surface.
- the gas supply mechanism 3 is formed in a planar circular shape having a size covering the wafer W, and the inside thereof includes a first gas supply chamber 31 and a second gas supply chamber 32. It is divided into and. In the following, the case where a resist solution is used as the coating solution is taken as an example.
- the first gas supply chamber 31 is a gas supply chamber for supplying a repellent coating liquid gas (resist repellent gas) to the peripheral region 11 of the wafer W
- the second gas supply chamber 32 is a This is a gas supply chamber for supplying a parent coating liquefied gas (parent resist forming gas) to the central region 12.
- a large number of gas supply holes 31 a and 32 a are formed in the lower surfaces of the first and second gas supply chambers 31 and 32.
- the first gas supply chamber 31 is connected to a resist-repellent gas supply unit 34 through a gas supply path 33
- the second gas supply chamber 32 is connected to a parent resist through a gas supply path 35.
- a gas supply unit 36 is connected.
- the gas supply passages 33 and 35 are provided with flow rate adjusting portions 33a and 35a each having a valve and a mass flow controller.
- the peripheral region 11 for supplying the resist-repelling gas on the wafer W is a region on the inner side of the outer edge of about 0.5 mm to 30 mm when the wafer W is 200 mm in size.
- the central region 12 for supplying the parent resist gas is a region inside the peripheral region 11. The reason why the resist repellent gas is supplied to the peripheral region 11 of the wafer W is to make the peripheral region 11 resist repellent by supplying the resist repellent gas and make it difficult to apply the resist solution to the region 11. .
- the transfer arm 15 (see FIG. 12) of the wafer W generally holds the peripheral area 11 of the wafer W.
- Adhesion of the resist solution can be suppressed.
- the margin for setting the rotation conditions when rotating the spin chuck 2 can be widened. This is because when the resist is located on the inner side of the wafer W, the wafer W is less likely to be scattered outside when the wafer W is rotated.
- the reason why the parent resisting gas is supplied to the central region 12 of the wafer W is that the central region 12 is made to be a parent resist by supplying the parent resisting gas so that the resist solution can be easily adjusted. This is to facilitate application.
- a fluorine coating agent or the like can be used as the resist repellent gas, and propylene glycol methyl ether (PGME) or the like can be used as the parent resist forming gas.
- PGME propylene glycol methyl ether
- Such a gas supply mechanism 3 has a gas supply position in which the lower surface thereof is close to the surface of the wafer W on the spin chuck 2 and a standby position separated from the upper side of the wafer W via the elevating member 38 by the elevating mechanism 37. It can be moved up and down.
- the gas supply position is a position where the lower surface of the gas supply mechanism 3 is separated from the surface of the wafer W on the spin chuck 2 by about 5 mm to 10 mm.
- a coating nozzle 4 is provided on the upper side of the wafer W held by the spin chuck 2. As shown in FIGS. 2 and 3, the coating nozzle 4 is a long nozzle extending in the Y direction in the figure, and a slit-like discharge port 41 extending in the length direction is formed on the lower surface thereof.
- the discharge port 41 is formed to have a length equal to or longer than the width of the surface to be coated of the wafer W.
- the width of the surface to be coated is determined according to the region where the coating liquid is to be coated on the wafer W.
- the width of the surface to be coated corresponds to the diameter of the wafer, but when the coating liquid is applied only to the central area 12 of the wafer W, Corresponds to the diameter. Further, when the coating liquid is applied only to the circuit formation region of the wafer W, this corresponds to the maximum width of the circuit diameter region.
- the width of the surface to be coated corresponds to the maximum width of the region where the coating liquid is to be applied to the substrate.
- the discharge port 41 of the coating nozzle 4 has a slit shape in this example, but a plurality of discharge holes may be arranged at intervals.
- a coating liquid channel 42 communicating with the discharge port 41 is formed in the coating nozzle 4 along the length direction thereof.
- the coating liquid channel 42 is supplied with a coating liquid from a coating liquid tank 5 to be described later via a channel 43 formed in the coating nozzle 4.
- the discharge port 41, the coating liquid channel 42, and the channel 43 constitute a coating liquid channel in the coating nozzle 4.
- the width L1 of the discharge port 41, the coating liquid flow path 42, and the flow path 43 is set to be a capillary having such a size that a capillary phenomenon can be obtained, for example, about 0.1 mm to 0.5 mm.
- the coating nozzle 4 is configured to move by a moving mechanism 44 in a state where the discharge port 41 is close to the surface of the wafer W on the spin chuck 2.
- the moving mechanism 44 is configured to be movable along a guide rail 45 extending in a direction intersecting with the discharge port 41 (X direction in FIG. 3).
- the coating nozzle 4 moves in a direction intersecting with the discharge port 41 from the outside standby position (position shown in FIG. 3) on one end side of the spin chuck 2 to the other end side of the wafer W held by the spin chuck 2. It can be done.
- the state in which the discharge port 41 is brought close to the surface of the wafer W on the spin chuck 2 means a state in which the distance L2 between the lower end of the coating nozzle 4 and the surface of the wafer W is, for example, about 0.1 mm to 0.4 mm. . Further, when the application nozzle 4 is at the standby position, the gas supply mechanism 3 is not prevented from moving to the gas supply position, and when the gas supply mechanism 3 is at the standby position, the movement of the application nozzle 4 is not inhibited. Has been.
- the coating solution tank 5 forms a coating solution tank in which a coating solution, for example, a resist solution is stored, and its upper side is open to the atmosphere.
- the coating liquid tank 5 and the coating nozzle 4 are connected via a coating liquid supply path 51, and the other end of the coating liquid supply path 51 is connected to a flow path 43 in the coating nozzle 4. Yes.
- the coating liquid supply path 51 is provided with a pump P1 that serves to push out the coating liquid at the start of coating, and an opening / closing valve V1.
- a liquid level sensor 52 for detecting the height position of the liquid level of the coating liquid in the coating liquid tank 5 is provided on the upper side of the coating liquid tank 5.
- As the liquid level sensor 52 for example, an ultrasonic wave is provided.
- a liquid level sensor can be used.
- the coating liquid tank 5 is configured to be movable up and down by an elevating mechanism 53.
- As the elevating mechanism 53 for example, a mechanism including a ball screw can be used.
- the coating liquid tank 5 is connected to a coating liquid storage tank 6 that stores the coating liquid, and a supply path 61 that includes a pump P2 and an opening / closing valve V2.
- the coating liquid is supplied from the coating liquid tank 5 to the coating nozzle 4 using the principle of the communication pipe, and the coating liquid is discharged between the coating nozzle 4 and the wafer W using the capillary phenomenon. ing.
- the flow path of the coating liquid in the coating nozzle 4 is formed in a capillary tube that can obtain a capillary phenomenon, and the inside of the coating liquid tank 5 from the height position of the tip of the discharge port 41 of the coating liquid nozzle 4.
- the height level of the coating liquid is set to be low.
- the amount of the coating liquid discharged from the coating nozzle 4 by the difference H (see FIG. 6) between the height position of the coating liquid level in the coating liquid tank 5 and the height position of the tip of the coating nozzle 4. Is adjusted. Therefore, the size of the flow path in the coating nozzle 4, the difference H, the volume of the coating liquid supply path 51, and the like are determined so that the amount of the coating liquid discharged from the coating nozzle 4 becomes an appropriate amount.
- the coating liquid supply path 51 is configured to be flexible, and at the time of coating, the coating liquid tank 5 does not move and only the coating nozzle 4 moves. Thus, even if the application nozzle 4 moves and the shape of the application liquid supply path 51 changes, the above-described principle of the communication pipe is configured to operate.
- the control unit 7 described later applies the coating so that the difference H becomes constant. Control of the height of the liquid tank 5 by the elevating mechanism 53 is performed. This is because by making the difference H constant, the amount of the coating liquid discharged from the coating liquid nozzle 4 becomes constant.
- a cup body 13 is provided on the lower side of the spin chuck 2. As shown in FIGS. 1 to 3, the cup body 13 has a square shape in plan view, and one side in the length direction (Y direction in FIG. 3) is larger than the discharge port 41 of the application nozzle 4. It is set to be. However, as will be described later, in the coating apparatus 1, since the coating liquid is hardly discharged from the coating nozzle 4 to the cup body 13, the cup body 13 is not necessarily provided.
- the control unit 7 performs overall control of the operation of each device in the coating apparatus 1, and is composed of, for example, a computer and has a program storage unit (not shown).
- the program storage unit stores a program in which an instruction is set so as to perform the coating process of the coating liquid, which will be described later, and the control unit 7 reads the program into the control unit 7 to Supply of resist-repelling gas or parent resist gas by supply mechanism 3, movement of coating nozzle 4, supply of coating liquid from coating nozzle 4 to wafer W, rotation of wafer by spin chuck 2, liquid level of coating liquid tank 5 And the supply of the coating liquid from the coating liquid storage tank 6 to the coating liquid tank 5 are controlled.
- the program is stored in the program storage unit while being stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.
- the liquid level of the coating liquid tank 5 is adjusted as follows, for example.
- the control unit 7 outputs a start command for starting the discharge of the coating liquid to the wafer W on the spin chuck 2 to the moving mechanism 44 and the liquid level sensor 52 of the coating nozzle 4, and the coating nozzle 4 is based on this command.
- the application start position is a position at which the application liquid is discharged to the end portion on one end side of the wafer W.
- the liquid level sensor 52 detects the height position of the liquid level of the coating liquid in the coating liquid tank 5, and the control unit 7 acquires this as the reference height position. Thereafter, the liquid level sensor 52 detects the liquid level height position for a predetermined time, for example, every 0.1 second, and outputs it to the control unit 7. Then, the control unit 7 compares the detected height position with the reference height position, for example, until the height position of the liquid surface of the coating liquid in the coating liquid tank 5 is aligned with the reference height position. A command is output to 53 to raise and lower the coating liquid tank 5.
- the elevating mechanism 53 controls the application tank 5 to be 1 mm higher than the height at the start command.
- the rotation speed when the application tank 5 is raised by 1 mm is known in advance by the rotation speed of the ball screw mechanism, so that the application tank is rotated by a predetermined number based on a command from the control unit 7. A height of 5 is controlled.
- the wafer W is transferred into the processing container 10 by a transfer arm (not shown), and the wafer W is delivered onto the spin chuck 2.
- This wafer W is, for example, subjected to HMDS processing in which hexamethyldisilazane (HMDS) gas is supplied in another unit to make the surface of the wafer W water repellent.
- HMDS hexamethyldisilazane
- the wafer W is transferred by setting the table 21 of the spin chuck 2 to a size that does not hinder the forward / backward movement of the transfer arm. This is done by relatively raising and lowering. Further, a push-up pin (not shown) of the wafer W may be provided on the spin chuck 2 and the wafer W may be transferred by moving the push-up pin and the transfer arm relatively up and down.
- the gas supply mechanism 3 is lowered to the gas supply position, and the resist repellent gas is supplied to the peripheral region 11 of the wafer W and the parent resist forming gas is supplied to the central region 12 of the wafer W. Supply.
- the coating nozzle 4 is placed at the standby position.
- the resist-repelling gas and the parent resist-forming gas may be supplied simultaneously, or after one is supplied, the other may be supplied. Even if the resist-repelling gas and the parent resist-forming gas are supplied at the same time, the supply start timing and supply stop timing are not necessarily the same, and the supply start timing and supply stop timing may be different.
- the control unit 7 outputs a coating liquid coating start command to the moving mechanism 44 and the liquid level sensor 52.
- the application nozzle 4 moves to the application start position shown in FIG. 7B, and the liquid level sensor 52 detects the height position of the liquid level in the application liquid tank 5 and outputs it to the control unit 7.
- the control unit 7 obtains the height position of the liquid level as the reference height position, and then outputs a start command to the valve V1 and the pump P1. Accordingly, the valve V1 is opened, and a predetermined amount of the coating liquid R is sent from the coating liquid tank 5 to the coating nozzle 4 by the pump P1.
- the coating liquid R is applied between the coating nozzle 4 and the wafer W by a capillary phenomenon, and this capillary phenomenon is applied between the discharge port 41 of the coating nozzle 4 and the surface of the wafer W. Occurs when contacting with liquid R. Accordingly, at the start of coating, the coating liquid R is fed by the pump P1 to ensure that the coating liquid R is present between the discharge port 41 and the wafer W, so that the pump P1 can be stopped thereafter. The coating liquid is drawn out from the discharge port 41 by capillary action.
- the amount of the coating liquid R pushed out by the pump P1 is such that the coating liquid R discharged from the discharge port 41 comes into contact with the wafer W, and the distance L2 between the lower surface of the coating nozzle 4 and the surface of the wafer W is Since it is about 0.1 mm to 0.4 mm, it is a very small amount. Further, since the discharge port 41 of the coating nozzle 4 is large enough to cover the diameter of the wafer W, there is a region where the wafer W to be coated does not exist at the discharge port 41 at the start of coating. However, as described above, the amount of the coating liquid pushed out from the discharge port 41 by the pump P1 is very small.
- the coating liquid R rises at the discharge port 41 where the wafer W to be coated does not exist, it contacts the wafer W.
- the coating liquid R is pulled toward the liquid discharge port 41 side. For this reason, as a result, the coating liquid does not possibly fall onto the cup body 13 even at the discharge port 41 where the wafer W to be coated does not exist.
- the coating nozzle 4 is moved from one end side to the other end side of the wafer W held on the spin chuck 2 by the moving mechanism 44, and the coating solution R is applied to the wafer W. Is applied to form a coating film.
- the coating nozzle 4 and the wafer W are formed. In between, the coating liquid R is apply
- the discharge port 41 of the coating nozzle 4 and the wafer W are in contact with each other via the coating liquid R, and the coating liquid R is drawn from the discharge port 41 by the wafer W by capillary action as the coating nozzle 4 moves.
- the coating liquid tank 5 the upper surface is open to the atmosphere, and the principle of the communication pipe acts between the coating liquid tank 5 and the coating nozzle 4, so that the amount drawn out from the discharge port 41 is compensated.
- the coating liquid is supplied to the coating nozzle 4 by the coating liquid tank 5.
- the liquid level sensor 52 detects the liquid level of the coating liquid in the coating liquid tank 5 at a predetermined timing, and outputs the detected value to the control unit 7. Then, the control unit 7 compares this detected value with the reference height position, and controls the lifting mechanism 53 so that the liquid level of the coating liquid in the coating liquid tank 5 is aligned with the reference height position.
- the control unit 7 compares this detected value with the reference height position, and controls the lifting mechanism 53 so that the liquid level of the coating liquid in the coating liquid tank 5 is aligned with the reference height position.
- the coating nozzle 4 is moved to the other end side of the wafer W to apply the coating liquid R onto the wafer W, and then a coating end command is sent from the control unit 7 to the moving mechanism 44.
- the wafer W coated with the coating liquid R is rotated at a rotational speed at which the coating liquid R does not scatter from the wafer W.
- the application liquid is applied from the application nozzle 4 by using the capillary phenomenon, the film thickness of the application film on the wafer W is as extremely thin as about 10 ⁇ m.
- the coating liquid R is hardly scattered even when the wafer W is rotated, and the rotation speed at which the coating liquid R does not splash means, for example, a rotation speed of about 100 rpm to 500 rpm.
- the coating liquid R on the wafer W is moved by centrifugal force, so that the uniformity of the coating film thickness on the surface of the wafer W can be improved. .
- the coating liquid R is applied to the surface of the wafer W to form a coating film. After the coating liquid R is applied to a predetermined number of wafers W, a predetermined amount is applied from the coating liquid storage tank 6. The coating liquid R is supplied into the coating liquid tank 5.
- the thickness of the coating film on the wafer W is extremely thin, and the adjustment is made so that the level of the coating liquid in the coating liquid tank 5 is constant.
- the coating liquid R can be applied to the surface of the wafer W while securing the properties.
- the resist pattern has become more precise in recent years, it has been demanded to increase the uniformity of the coating film thickness.
- the liquid level of the coating liquid R in the coating liquid tank 5 is precisely adjusted, the film thickness uniformity of the coating film is theoretically improved.
- the coating amount of the coating liquid R is actually very small, The amount of change in the liquid level is also very small, and it is difficult to always keep the height position of the liquid level constant.
- the coating liquid R on the wafer W tends to move outward by centrifugal force.
- the coating liquid R is less likely to spill from the outer periphery of the wafer due to the surface tension on the outer periphery of the wafer W.
- the peripheral region 11 of the wafer W is resist-repellent, the coating liquid R on the wafer W before the rotation is present on the center side from the outermost periphery, so that the spin chuck 2 can be moved at a high speed in the subsequent process. Even in the case of drying by rotating, the margin for setting spin conditions can be widened.
- the coating liquid R is drawn out from the discharge port 41 of the coating nozzle 4 by the capillary phenomenon and applied to the wafer W, and the amount of the coating liquid R drawn out by the capillary phenomenon is extremely small. Further, since the application is performed while moving the application nozzle 4 while the discharge port 41 of the application nozzle 4 is close to the wafer W, there is no application liquid R scattered from the wafer W like spin coating. For this reason, the amount of the coating liquid R can be saved.
- the large cup body 13 that covers the region where the coating liquid R scatters from the upper side to the lower side of the wafer W held by the spin chuck 2 is provided. There is no need to provide the device, and the device can be downsized. Further, after applying the coating liquid R by capillary action, the wafer W is rotated at such a rotational speed that the coating liquid R does not scatter, so that high in-plane uniformity can be ensured in the thickness of the coating film. It is effective when a precise resist pattern is formed.
- the coating apparatus 1 may be configured as shown in FIG. This example is different from the coating apparatus of the above-described embodiment in that the coating nozzle 4 and the wafer are used by using the auxiliary nozzle 8 instead of pushing the coating liquid R from the coating nozzle 4 by the pump P1 at the start of coating of the coating liquid R.
- the coating liquid R is supplied between the terminal W and W.
- the auxiliary nozzle 8 is connected to a coating liquid supply unit 81 including a valve, a pump, and the like.
- the coating nozzle 4 is moved between the coating liquid tank 5 and the coating nozzle 4 and the wafer W is transferred to the spin chuck 2. It is provided so as not to disturb.
- the coating liquid R is supplied between the coating nozzle 4 and the surface of the wafer W from the auxiliary nozzle 8 at the timing when the coating nozzle 4 is moved to the coating start position, for example, based on the coating start command from the control unit 7. Configured to do. At this time, the amount of the coating liquid R supplied from the auxiliary nozzle 8 is such that the coating liquid R can connect the discharge port 41 of the coating nozzle 4 and the surface of the wafer W. Even in such a configuration, similarly to the first embodiment, it is possible to save and reduce the size of the coating liquid, and to obtain high uniformity in the film thickness of the coating liquid.
- the coating apparatus may be configured as shown in FIG.
- the difference between this example and the coating apparatus 1 of the first embodiment is that the coating liquid tank 5 moves together with the coating nozzle 4.
- the application nozzle 4 and the application liquid tank 5 are combined in the nozzle unit 83, and the nozzle unit 83 is configured to be movable in a direction intersecting the discharge port 41 by the moving mechanism 44.
- a coating liquid supply path 51 that connects the coating nozzle 4 and the coating liquid tank 5
- a liquid level sensor 52 that detects the liquid level of the coating liquid R in the coating liquid tank 5, and the elevation of the coating liquid tank 5.
- a mechanism 53 is also provided. Based on the detection value from the liquid level sensor 52, the controller 7 is configured to control the lifting mechanism 53 of the coating liquid tank 5.
- the supply path 61 connecting the coating liquid tank 5 and the coating liquid storage tank 6 is configured to be flexible, and the shape of the supply path 61 changes when the nozzle unit 83 moves. Even in such a configuration, similarly to the first embodiment, it is possible to save and reduce the size of the coating liquid, and to obtain high uniformity in the film thickness of the coating liquid.
- the coating nozzle 4 is moved in the direction intersecting the ejection port 41 with respect to the wafer W, but the spin chuck 2 side is moved in the direction intersecting the ejection port 41 without moving the coating nozzle 4 side. You may make it make it.
- the coating nozzle 4 is made to correspond to the center of the wafer W on the spin chuck 2 and the center of the discharge port 41 in the length direction, and the discharge port 41 is close to the surface of the wafer W.
- the coating liquid R may be applied by rotating the spin chuck 2 side halfway. At this time, instead of rotating the spin chuck 2 side, the coating nozzle 4 side may be rotated about the center of the discharge port 41 in the length direction.
- the discharge speed of the coating liquid R from the discharge port 41 is slow on the center side of the wafer W, and the outer periphery of the wafer W You may control to make it quick on the side.
- reference numeral 84 denotes a reversing mechanism that sucks and holds the wafer W substantially horizontally and reverses it around the horizontal axis.
- the reversing mechanism includes a stage 86 that holds the wafer W by vacuum suction or electrostatic suction, for example, and a rotation mechanism 87 that rotates the stage 86 along a horizontal rotation shaft 85.
- the stage 86 is configured to suck and hold the center side of the wafer W. Then, for example, as shown in FIG.
- the transfer is performed even if the transfer arm 15 is moved forward and backward with respect to the stage 86.
- the size is set such that the arm 15 and the stage 86 do not contact each other.
- the gas supply mechanism 3, the coating nozzle 4, the coating liquid tank 5 and the like are configured in the same manner as the coating apparatus 1 of the first embodiment except that the discharge port 41 of the coating nozzle 4 faces upward. That is, also in this example, the flow path of the coating liquid including the discharge port 41 in the coating nozzle 4 is configured in a capillary shape, and the height of the coating liquid R in the coating liquid tank 5 is set to be the height of the coating nozzle 4. The discharge port 41 is configured to be lower than the height.
- the coating liquid R is drawn out by capillary action between the discharge port 41 of the coating nozzle 4 and the wafer W, and the coating liquid R is supplied between the coating nozzle 4 and the coating liquid tank 5 according to the principle of the communication pipe. It has become.
- the wafer W is transferred from the transfer arm 15 to the stage 86, and the wafer W is sucked and held on the stage 86.
- the gas supply mechanism 3 is lowered to a position where gas is supplied to the wafer W, and a resist repellent gas and a parent resist forming gas are supplied to the peripheral region 11 and the central region 12 of the wafer W, respectively.
- the transfer arm 15 holding the wafer W is lowered from above the stage 86 to transfer the wafer W onto the stage 86, and then the transfer arm 15 is retracted. To do.
- the stage 86 is reversed by the rotation mechanism 87, and the surface of the wafer W is directed downward.
- the gas supply mechanism 3 and the coating nozzle 4 are moved to the standby position in advance so as not to disturb the reversing operation.
- the wafer W is moved from one end side to the other end side of the wafer W by the moving mechanism 44, and the surface of the wafer W is the same as in the first embodiment.
- the coating solution R is applied from the coating nozzle 4 using a capillary phenomenon. After the coating liquid R is applied to the wafer W in this way, the stage 86 is inverted by the rotating mechanism 87 so that the surface of the wafer W faces upward. At this time, the wafer W having the coating liquid R applied on its surface is inverted, but the coating film thickness is 10 ⁇ m. Since it is very thin, there is no possibility of dripping or deviation of liquid during the reversing operation.
- the rotating unit 88 includes a rotating stage 89 that holds the wafer W by suction and rotates it around the vertical axis, and the wafer W is transferred from the transfer arm 15 to the rotating stage 89. Delivered.
- the rotating unit 88 rotates the wafer W coated with the coating liquid R at a rotation speed at which the coating liquid R does not scatter from the wafer W, for example, 100 rpm to 500 rpm.
- the coating liquid R is applied from the coating nozzle 4 using the capillary phenomenon as in the above-described embodiment, it is possible to reduce the amount of the coating liquid R and reduce the size of the apparatus.
- the wafer W is rotated after application of the coating liquid R, the uniformity of the film thickness of the coating liquid R can be further improved.
- the coating liquid R is supplied between the wafer W and the coating nozzle 4 from the auxiliary nozzle 8 at the start of coating.
- the application nozzle 4 and the application liquid tank 5 may be moved together.
- the coating liquid R is applied to the wafer W, and then the wafer W is rotated at a rotational speed at which the coating liquid R on the wafer W does not scatter from the wafer W, and then the rotational speed is, for example, 500 rpm to 2000 rpm.
- the process of drying the coating liquid R on the wafer may be performed by increasing it to the extent.
- the coating liquid R is drawn from the ejection port 41 by a capillary phenomenon while being applied to the wafer W while the ejection port 41 of the coating nozzle 4 is relatively moved while being close to the wafer W.
- the step of rotating the wafer W at a rotation speed at which the coating liquid R on the wafer W does not scatter from the wafer W, and the configuration of the coating apparatus 1 is limited to the above-described embodiment. Absent. Accordingly, the pump P1 and the auxiliary nozzle 8 that push out the coating liquid R at the start of discharge from the coating nozzle 4 are not necessarily required.
- the gas repellent gas is supplied to the peripheral region 11 of the wafer W using the gas supply mechanism 3 and the parent resist forming gas is supplied to the central region 12 of the wafer W.
- the supply of gas and parent resist gas is not necessarily required. Alternatively, only the resist-repellent gas may be supplied, or the gas supply mechanism 3 may be provided in a separate unit from the coating apparatus 1.
- the rotation of the wafer W coated with the coating liquid R may be performed by a unit different from the coating apparatus 1.
- the present invention can also be applied to a coating device for applying a resist solution, a processing solution for forming an antireflection film, a developing solution, polyimide, etc. to the substrate.
- a glass substrate (LCD substrate) and a substrate such as a solar cell substrate are also included.
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Abstract
A method for forming a coating film on a substrate by supplying an application liquid thereon. A substrate holding section for horizontally holding a substrate is caused to hold the substrate. Then, while the discharge opening of an application nozzle is positioned close to the substrate and is moved relative to the substrate, an application liquid is extracted from the discharge opening by the capillary effect and applied to the substrate, the application nozzle having flow paths for the application liquid which include the discharge opening, the flow paths being configured in the form of capillary tubes. After that, the substrate is rotated at a speed at which the application liquid on the substrate is not scattered from the substrate. The substrate is rotated by rotating the substrate holding section about a vertical axis.
Description
本発明は、基板に塗布液を塗布する塗布方法及び塗布装置に関する。
The present invention relates to a coating method and a coating apparatus for coating a substrate with a coating liquid.
半導体デバイスやLCD基板の製造プロセスにおいて、レジスト液等の塗布液は、一般的にスピンコーティング法により半導体ウエハ(以下「ウエハ」という)に塗布されている。この手法は、スピンチャック上に保持されたウエハを回転すると共に、その中心にノズルから塗布液を供給し、この塗布液を遠心力により外方へ延伸させてウエハ表面全体に塗布液を伸展させるものである。
In the manufacturing process of semiconductor devices and LCD substrates, a coating solution such as a resist solution is generally applied to a semiconductor wafer (hereinafter referred to as “wafer”) by a spin coating method. In this method, the wafer held on the spin chuck is rotated, and the coating liquid is supplied to the center of the wafer from the nozzle, and the coating liquid is stretched outward by centrifugal force to extend the coating liquid over the entire wafer surface. Is.
しかしながら、この手法では、ウエハの回転時に、ウエハの外方へ飛散する塗布液の量が多く、塗布液の使用効率が悪いという課題がある。またウエハの外方へ塗布液が飛散するため、ウエハの側方全体を覆うようにカップ体を設ける必要があり、ウエハの大型化に伴ってカップ体も大きくなることから、塗布液の塗布を行う塗布モジュールが大型化してしまうという課題もある。
However, with this method, there is a problem that the amount of the coating liquid that scatters to the outside of the wafer during rotation of the wafer is large, and the usage efficiency of the coating liquid is poor. In addition, since the coating liquid scatters to the outside of the wafer, it is necessary to provide a cup body so as to cover the entire side of the wafer. There also exists a subject that the coating module to perform will enlarge.
このような課題の解決手法として、特許文献1には、毛細管現象を利用して、角型基板に塗布液を塗布する手法が提案されている。この手法は、塗布液槽に斜め上方側に伸びる毛管状の塗布液流出路を設け、塗布液槽内の塗布液が毛細管作用によって塗布液流出路を上昇してその先端から流出し、基板に塗布するというものである。
As a technique for solving such a problem, Patent Document 1 proposes a technique of applying a coating solution to a square substrate using a capillary phenomenon. In this method, a capillary coating liquid outflow path extending obliquely upward is provided in the coating liquid tank, and the coating liquid in the coating liquid tank rises up the coating liquid outflow path by capillary action and flows out from the tip thereof, and flows onto the substrate. It is to apply.
ところでこの毛細管現象を利用した塗布手法では、塗布液槽内の液面高さと塗布液流出路の先端の高さとの差異によって、塗布液流出路から流出する塗布液の量が調整される。このため、基板に対して均一な膜厚で塗布液を塗布するためには、塗布液槽内の液面高さと塗布液流出路の先端の高さとを一定に保つ必要がある。しかしながら、毛細管現象により塗布液流出路から流出する塗布液の量は極めて少量であり、現実的には一枚の基板を塗布する間に塗布液槽内の液面高さを常に一定に調整することは困難である。
By the way, in the coating method using the capillary phenomenon, the amount of the coating liquid flowing out from the coating liquid outflow path is adjusted according to the difference between the liquid surface height in the coating liquid tank and the height of the tip of the coating liquid outflow path. For this reason, in order to apply the coating liquid with a uniform film thickness to the substrate, it is necessary to keep the liquid level in the coating liquid tank and the height of the tip of the coating liquid outflow path constant. However, the amount of the coating liquid flowing out from the coating liquid outflow path due to capillary action is extremely small, and in reality, the liquid level in the coating liquid tank is always adjusted to be constant while one substrate is applied. It is difficult.
一方より線幅の細い、高密度パターンを有するフォトマスクの製造には、レジスト液を均一に塗布することが要求されるため、この毛細管現象を利用した塗布方法をレジスト液の塗布に適用した場合、レジスト膜の膜厚均一性という点で課題が残る。
On the other hand, when manufacturing a photomask with a narrower line width and a high-density pattern, it is required to apply the resist solution uniformly. Therefore, when this coating method using capillary action is applied to the application of the resist solution However, there remains a problem in terms of film thickness uniformity of the resist film.
本発明は、このような事情の下になされたものであり、塗布液の省量化及び装置の小型化を図り、基板上の塗布膜の膜厚について高い均一性を得ることができる技術を提供することにある。
The present invention has been made under such circumstances, and provides a technique capable of reducing the amount of coating liquid and reducing the size of the apparatus and obtaining high uniformity in the thickness of the coating film on the substrate. There is to do.
このため本発明は、基板に塗布液を供給して塗布膜を形成する方法において、
基板を基板保持部に略水平に保持させる工程と、
次いで塗布ノズルの吐出口を、前記基板に対して近接させた状態で相対的に移動させながら、前記吐出口から毛細管現象により塗布液を引き出して基板に塗布する工程と、
続いて基板上の塗布液が基板から飛散しない回転数で当該基板を回転させる工程と、を含むことを特徴とする。 Therefore, the present invention provides a method for forming a coating film by supplying a coating solution to a substrate.
A step of holding the substrate substantially horizontally on the substrate holding portion;
Next, a process of drawing the coating liquid from the discharge port by capillary action and applying it to the substrate while relatively moving the discharge port of the coating nozzle close to the substrate;
And a step of rotating the substrate at a rotation speed at which the coating liquid on the substrate does not scatter from the substrate.
基板を基板保持部に略水平に保持させる工程と、
次いで塗布ノズルの吐出口を、前記基板に対して近接させた状態で相対的に移動させながら、前記吐出口から毛細管現象により塗布液を引き出して基板に塗布する工程と、
続いて基板上の塗布液が基板から飛散しない回転数で当該基板を回転させる工程と、を含むことを特徴とする。 Therefore, the present invention provides a method for forming a coating film by supplying a coating solution to a substrate.
A step of holding the substrate substantially horizontally on the substrate holding portion;
Next, a process of drawing the coating liquid from the discharge port by capillary action and applying it to the substrate while relatively moving the discharge port of the coating nozzle close to the substrate;
And a step of rotating the substrate at a rotation speed at which the coating liquid on the substrate does not scatter from the substrate.
本発明によれば、塗布ノズルの吐出口を基板に対して近接させた状態で、これら塗布ノズルと基板とを相対的に移動させて、前記吐出口から毛細管現象により塗布液を引き出して基板に塗布している。このため塗布液が飛散して無駄になるといったことがなく、塗布液の省量化を図ることができ、また装置の小型化を図ることができる。さらに塗布液を塗布した基板を、基板上の塗布液が飛散しない回転数で回転させているので、塗布膜の膜厚の均一性を高めることができる。
According to the present invention, in a state where the discharge port of the coating nozzle is close to the substrate, the coating nozzle and the substrate are moved relative to each other, and the coating liquid is drawn from the discharge port by capillary action to the substrate. It is applied. For this reason, the coating liquid is not scattered and wasted, the amount of the coating liquid can be saved, and the apparatus can be miniaturized. Furthermore, since the substrate on which the coating solution is applied is rotated at a rotational speed at which the coating solution on the substrate does not scatter, the uniformity of the coating film thickness can be improved.
本発明に係る塗布装置1の第1の実施の形態について図面を参照しながら説明する。図1~図3に示すように、塗布装置1は、処理容器10の内部に、基板例えばウエハWを裏面側から水平に保持すると共に、鉛直軸周りに回転自在に構成されたスピンチャック2を備えている。このスピンチャック2は、ウエハWを吸引保持する基板保持部をなすものであり、ウエハWを水平に保持する概略円板状のテーブル21と、このテーブル21の下面中央部に接続された回転軸22と、を備えている。前記テーブル21は例えば真空吸着又は静電吸着によりウエハWを吸着保持するように構成されている。前記回転軸22の下部側には、当該回転軸22を鉛直軸まわりに回転自在及び昇降自在に支持する駆動機構23が接続されている。図3中、10aはウエハWの搬送口である。
A first embodiment of a coating apparatus 1 according to the present invention will be described with reference to the drawings. As shown in FIGS. 1 to 3, the coating apparatus 1 includes a spin chuck 2 configured to hold a substrate, for example, a wafer W horizontally from the back side, and to be rotatable about a vertical axis in a processing container 10. I have. The spin chuck 2 forms a substrate holding unit for sucking and holding the wafer W. The spin chuck 2 has a substantially disk-like table 21 that holds the wafer W horizontally, and a rotary shaft connected to the center of the lower surface of the table 21. 22. The table 21 is configured to hold the wafer W by vacuum suction or electrostatic suction, for example. Connected to the lower side of the rotary shaft 22 is a drive mechanism 23 that supports the rotary shaft 22 so as to be rotatable and vertically movable about a vertical axis. In FIG. 3, reference numeral 10 a denotes a transfer port for the wafer W.
前記スピンチャック2の上方側には、当該スピンチャック2に保持されたウエハWと対向するように、撥塗布液化機構を兼ねるガス供給機構3が設けられている。撥塗布液化機構はウエハW表面に対する塗布液の接触角制御を行うものである。ガス供給機構3は、例えば図2及び図4に示すように、ウエハWを覆う大きさの平面円形状に形成され、その内部は第1のガス供給室31と、第2のガス供給室32とに分割されている。以下では塗布液としてレジスト液を用いる場合を例にしているため、撥塗布液化は撥レジスト化として説明する。
On the upper side of the spin chuck 2, a gas supply mechanism 3 that also serves as a liquid-repellent application liquefaction mechanism is provided so as to face the wafer W held by the spin chuck 2. The repellent coating liquefaction mechanism controls the contact angle of the coating solution with respect to the wafer W surface. For example, as shown in FIGS. 2 and 4, the gas supply mechanism 3 is formed in a planar circular shape having a size covering the wafer W, and the inside thereof includes a first gas supply chamber 31 and a second gas supply chamber 32. It is divided into and. In the following, the case where a resist solution is used as the coating solution is taken as an example.
前記第1のガス供給室31は、ウエハWの周縁領域11に撥塗布液化ガス(撥レジスト化ガス)を供給するためのガス供給室であり、第2のガス供給室32は、ウエハWの中央領域12に親塗布液化ガス(親レジスト化ガス)を供給するためのガス供給室である。これら第1及び第2のガス供給室31,32の下面には、多数のガス供給孔31a,32aが形成されている。また第1のガス供給室31には、ガス供給路33を介して撥レジスト化ガス供給部34が接続されると共に、第2のガス供給室32にはガス供給路35を介して親レジスト化ガス供給部36が接続されている。これらガス供給路33,35には、バルブやマスフローコントローラを備えた流量調整部33a,35aが夫々設けられている。
The first gas supply chamber 31 is a gas supply chamber for supplying a repellent coating liquid gas (resist repellent gas) to the peripheral region 11 of the wafer W, and the second gas supply chamber 32 is a This is a gas supply chamber for supplying a parent coating liquefied gas (parent resist forming gas) to the central region 12. A large number of gas supply holes 31 a and 32 a are formed in the lower surfaces of the first and second gas supply chambers 31 and 32. The first gas supply chamber 31 is connected to a resist-repellent gas supply unit 34 through a gas supply path 33, and the second gas supply chamber 32 is connected to a parent resist through a gas supply path 35. A gas supply unit 36 is connected. The gas supply passages 33 and 35 are provided with flow rate adjusting portions 33a and 35a each having a valve and a mass flow controller.
ウエハWにおける前記撥レジスト化ガスを供給する周縁領域11は、例えば図4に示すように、ウエハWが200mmサイズである場合、外縁から0.5mm~30mm程度内側の領域である。一方前記親レジスト化ガスを供給する中央領域12は、前記周縁領域11の内側の領域である。ウエハWの周縁領域11に撥レジスト化ガスを供給する理由は、撥レジスト化ガスの供給によって当該周縁領域11を撥レジスト性にしておき、当該領域11へレジスト液を塗布しにくくするためである。このようにウエハWの周縁領域11へのレジスト液の塗布を抑制すると、ウエハWの搬送アーム15(図12参照)は、一般的にウエハWの周縁領域11を保持するため、当該搬送アームへのレジスト液の付着を抑えることができる。また後の工程において、スピンチャック2を回転させる時の回転条件設定のマージンを広げることができる。レジストがウエハWのより内側にある方が、ウエハWを回転させたときにウエハ外部へ飛散しにくくなるからである。
For example, as shown in FIG. 4, the peripheral region 11 for supplying the resist-repelling gas on the wafer W is a region on the inner side of the outer edge of about 0.5 mm to 30 mm when the wafer W is 200 mm in size. On the other hand, the central region 12 for supplying the parent resist gas is a region inside the peripheral region 11. The reason why the resist repellent gas is supplied to the peripheral region 11 of the wafer W is to make the peripheral region 11 resist repellent by supplying the resist repellent gas and make it difficult to apply the resist solution to the region 11. . When the application of the resist solution to the peripheral area 11 of the wafer W is suppressed in this way, the transfer arm 15 (see FIG. 12) of the wafer W generally holds the peripheral area 11 of the wafer W. Adhesion of the resist solution can be suppressed. In a later process, the margin for setting the rotation conditions when rotating the spin chuck 2 can be widened. This is because when the resist is located on the inner side of the wafer W, the wafer W is less likely to be scattered outside when the wafer W is rotated.
またウエハWの中央領域12に親レジスト化ガスを供給する理由は、親レジスト化ガスの供給により当該中央領域12を親レジスト性にしておくことで、レジスト液を馴染みやすくし、当該レジスト液を塗布しやすくするためである。前記撥レジスト化ガスとしてはフッ素コーティング剤等を用いることができ、前記親レジスト化ガスとしてはプロピレングリコールメチルエーテル(PGME)等を用いることができる。このようなガス供給機構3は、昇降機構37により昇降部材38を介して、その下面がスピンチャック2上のウエハW表面と近接するガス供給位置と、ウエハWの上方側に離れた待機位置との間で昇降自在に構成されている。前記ガス供給位置とは、ガス供給機構3の下面が、スピンチャック2上のウエハW表面から5mm~10mm程度離隔する位置である。
The reason why the parent resisting gas is supplied to the central region 12 of the wafer W is that the central region 12 is made to be a parent resist by supplying the parent resisting gas so that the resist solution can be easily adjusted. This is to facilitate application. A fluorine coating agent or the like can be used as the resist repellent gas, and propylene glycol methyl ether (PGME) or the like can be used as the parent resist forming gas. Such a gas supply mechanism 3 has a gas supply position in which the lower surface thereof is close to the surface of the wafer W on the spin chuck 2 and a standby position separated from the upper side of the wafer W via the elevating member 38 by the elevating mechanism 37. It can be moved up and down. The gas supply position is a position where the lower surface of the gas supply mechanism 3 is separated from the surface of the wafer W on the spin chuck 2 by about 5 mm to 10 mm.
前記スピンチャック2に保持されたウエハWの上方側には、塗布ノズル4が設けられている。この塗布ノズル4は図2及び図3に示すように、図中Y方向に伸びる長尺ノズルであり、その下面には長さ方向に沿って伸びるスリット状の吐出口41が形成されている。この吐出口41は、ウエハWの被塗布面の幅と同じかそれ以上の長さに形成されている。ここで前記被塗布面の幅は、ウエハWに対して塗布液を塗布しようとする領域に応じて決定される。この例ではウエハ全面に塗布液を塗布するので、前記被塗布面の幅はウエハの直径に相当するが、ウエハWの中央領域12のみに塗布液を塗布する場合には、当該中央領域12の直径に相当する。またウエハWの回路形成領域のみに塗布液を塗布する場合には、当該回路径領域の最大幅に相当する。基板が角型である場合には、前記被塗布面の幅は、基板に対して塗布液を塗布しようとする領域の最大幅に相当する。また塗布ノズル4の吐出口41は、この例ではスリット状であるが、多数の吐出孔を互いに間隔をおいて配列するものであってもよい。
A coating nozzle 4 is provided on the upper side of the wafer W held by the spin chuck 2. As shown in FIGS. 2 and 3, the coating nozzle 4 is a long nozzle extending in the Y direction in the figure, and a slit-like discharge port 41 extending in the length direction is formed on the lower surface thereof. The discharge port 41 is formed to have a length equal to or longer than the width of the surface to be coated of the wafer W. Here, the width of the surface to be coated is determined according to the region where the coating liquid is to be coated on the wafer W. In this example, since the coating liquid is applied to the entire surface of the wafer, the width of the surface to be coated corresponds to the diameter of the wafer, but when the coating liquid is applied only to the central area 12 of the wafer W, Corresponds to the diameter. Further, when the coating liquid is applied only to the circuit formation region of the wafer W, this corresponds to the maximum width of the circuit diameter region. When the substrate is square, the width of the surface to be coated corresponds to the maximum width of the region where the coating liquid is to be applied to the substrate. In addition, the discharge port 41 of the coating nozzle 4 has a slit shape in this example, but a plurality of discharge holes may be arranged at intervals.
前記塗布ノズル4の内部には、図5及び図6に示すように、その長さ方向に沿って前記吐出口41と連通する塗布液流路42が形成されている。この塗布液流路42には、塗布ノズル4内に形成された流路43を介して、後述する塗布液タンク5から塗布液が供給される。この例では、吐出口41、塗布液流路42及び流路43により、塗布ノズル4内の塗布液の流路が構成されている。これら吐出口41、塗布液流路42及び流路43の幅L1は、毛細管現象が得られる大きさ、例えば0.1mm~0.5mm程度の毛細管状に設定されている。
As shown in FIG. 5 and FIG. 6, a coating liquid channel 42 communicating with the discharge port 41 is formed in the coating nozzle 4 along the length direction thereof. The coating liquid channel 42 is supplied with a coating liquid from a coating liquid tank 5 to be described later via a channel 43 formed in the coating nozzle 4. In this example, the discharge port 41, the coating liquid channel 42, and the channel 43 constitute a coating liquid channel in the coating nozzle 4. The width L1 of the discharge port 41, the coating liquid flow path 42, and the flow path 43 is set to be a capillary having such a size that a capillary phenomenon can be obtained, for example, about 0.1 mm to 0.5 mm.
この塗布ノズル4は、図3に示すように、移動機構44により、吐出口41をスピンチャック2上のウエハW表面に近接させた状態で移動するように構成されている。前記移動機構44は、前記吐出口41と交差する方向(図3中X方向)に伸びるガイドレール45に沿って移動自在に構成されている。こうして塗布ノズル4は、吐出口41と交差する方向に、スピンチャック2の一端側の外側の待機位置(図3に示す位置)から、スピンチャック2に保持されたウエハWの他端側まで移動できるようになっている。ここで吐出口41をスピンチャック2上のウエハW表面に近接させた状態とは、塗布ノズル4の下端と前記ウエハW表面との距離L2が例えば0.1mm~0.4mm程度の状態をいう。また塗布ノズル4が待機位置にあるときには、ガス供給機構3がガス供給位置に移動することを妨げず、一方ガス供給機構3が待機位置にあるときには、塗布ノズル4の移動を阻害しないように構成されている。
As shown in FIG. 3, the coating nozzle 4 is configured to move by a moving mechanism 44 in a state where the discharge port 41 is close to the surface of the wafer W on the spin chuck 2. The moving mechanism 44 is configured to be movable along a guide rail 45 extending in a direction intersecting with the discharge port 41 (X direction in FIG. 3). Thus, the coating nozzle 4 moves in a direction intersecting with the discharge port 41 from the outside standby position (position shown in FIG. 3) on one end side of the spin chuck 2 to the other end side of the wafer W held by the spin chuck 2. It can be done. Here, the state in which the discharge port 41 is brought close to the surface of the wafer W on the spin chuck 2 means a state in which the distance L2 between the lower end of the coating nozzle 4 and the surface of the wafer W is, for example, about 0.1 mm to 0.4 mm. . Further, when the application nozzle 4 is at the standby position, the gas supply mechanism 3 is not prevented from moving to the gas supply position, and when the gas supply mechanism 3 is at the standby position, the movement of the application nozzle 4 is not inhibited. Has been.
前記塗布液タンク5は、その内部に塗布液、例えばレジスト液が貯留された塗布液槽を成すものであり、その上方側は大気開放されている。この塗布液タンク5と塗布ノズル4との間は塗布液供給路51を介して接続されており、この塗布液供給路51の他端側は前記塗布ノズル4内の流路43に接続されている。また塗布液供給路51には、塗布開始時に塗布液を押し出す役目を果たすポンプP1と、開閉バルブV1とが設けられている。
The coating solution tank 5 forms a coating solution tank in which a coating solution, for example, a resist solution is stored, and its upper side is open to the atmosphere. The coating liquid tank 5 and the coating nozzle 4 are connected via a coating liquid supply path 51, and the other end of the coating liquid supply path 51 is connected to a flow path 43 in the coating nozzle 4. Yes. The coating liquid supply path 51 is provided with a pump P1 that serves to push out the coating liquid at the start of coating, and an opening / closing valve V1.
塗布液タンク5の上方側には、塗布液タンク5内の塗布液の液面の高さ位置を検出するための液面センサ52が設けられており、この液面センサ52としては例えば超音波式液面レベルセンサを用いることができる。また塗布液タンク5は昇降機構53により昇降自在に構成されており、この昇降機構53としては例えばボールネジを備えた機構を用いることができる。さらに塗布液タンク5は、塗布液を貯留する塗布液貯槽6と、ポンプP2及び開閉バルブV2を備えた供給路61により接続されている。
A liquid level sensor 52 for detecting the height position of the liquid level of the coating liquid in the coating liquid tank 5 is provided on the upper side of the coating liquid tank 5. As the liquid level sensor 52, for example, an ultrasonic wave is provided. A liquid level sensor can be used. The coating liquid tank 5 is configured to be movable up and down by an elevating mechanism 53. As the elevating mechanism 53, for example, a mechanism including a ball screw can be used. Furthermore, the coating liquid tank 5 is connected to a coating liquid storage tank 6 that stores the coating liquid, and a supply path 61 that includes a pump P2 and an opening / closing valve V2.
この塗布装置1では、連通管の原理を利用して塗布液タンク5から塗布液を塗布ノズル4に供給し、塗布ノズル4とウエハWとの間では毛細管現象を利用して塗布液を吐出している。このため既述のように塗布ノズル4内の塗布液の流路は、毛細管現象が得られる毛細管状に形成され、塗布液ノズル4の吐出口41の先端の高さ位置より塗布液タンク5内の塗布液の液面の高さ位置が低くなるように設定される。
In this coating apparatus 1, the coating liquid is supplied from the coating liquid tank 5 to the coating nozzle 4 using the principle of the communication pipe, and the coating liquid is discharged between the coating nozzle 4 and the wafer W using the capillary phenomenon. ing. For this reason, as described above, the flow path of the coating liquid in the coating nozzle 4 is formed in a capillary tube that can obtain a capillary phenomenon, and the inside of the coating liquid tank 5 from the height position of the tip of the discharge port 41 of the coating liquid nozzle 4. The height level of the coating liquid is set to be low.
この際、塗布液タンク5内の塗布液の液面の高さ位置と塗布ノズル4の先端の高さ位置との差分H(図6参照)により、塗布ノズル4から吐出される塗布液の量が調整される。従って、塗布ノズル4から吐出される塗布液の量が適切な量となるように、塗布ノズル4内の流路の大きさや、前記差分H、塗布液供給路51の容積等が決定される。ここで前記塗布液供給路51はフレキシブルに構成され、塗布時には、塗布液タンク5は移動せずに塗布ノズル4のみが移動するようになっている。このように塗布ノズル4が移動して塗布液供給路51の形状が変化した場合であっても、既述の連通管の原理が作用するように構成されている。
At this time, the amount of the coating liquid discharged from the coating nozzle 4 by the difference H (see FIG. 6) between the height position of the coating liquid level in the coating liquid tank 5 and the height position of the tip of the coating nozzle 4. Is adjusted. Therefore, the size of the flow path in the coating nozzle 4, the difference H, the volume of the coating liquid supply path 51, and the like are determined so that the amount of the coating liquid discharged from the coating nozzle 4 becomes an appropriate amount. Here, the coating liquid supply path 51 is configured to be flexible, and at the time of coating, the coating liquid tank 5 does not move and only the coating nozzle 4 moves. Thus, even if the application nozzle 4 moves and the shape of the application liquid supply path 51 changes, the above-described principle of the communication pipe is configured to operate.
そして塗布時には塗布液タンク5内の塗布液の液面の高さを液面センサ52により検出し、この検出値に基づいて、後述する制御部7により前記差分Hが一定になるように、塗布液タンク5の高さを昇降機構53により制御することが行われる。前記差分Hを一定にすることにより、塗布液ノズル4から吐出される塗布液の量が一定になるからである。
At the time of application, the height of the liquid level of the coating liquid in the coating liquid tank 5 is detected by the liquid level sensor 52, and based on this detection value, the control unit 7 described later applies the coating so that the difference H becomes constant. Control of the height of the liquid tank 5 by the elevating mechanism 53 is performed. This is because by making the difference H constant, the amount of the coating liquid discharged from the coating liquid nozzle 4 becomes constant.
またスピンチャック2の下部側には、カップ体13が設けられている。このカップ体13は、図1~図3に示すように、平面形状が四角形状に構成され、その長さ方向(図3中Y方向)の一辺が、塗布ノズル4の吐出口41よりも大きくなるように設定されている。但し後述するように、当該塗布装置1では塗布ノズル4からカップ体13に塗布液がほとんど吐出されることはないため、必ずしもカップ体13を設ける必要はない。
Also, a cup body 13 is provided on the lower side of the spin chuck 2. As shown in FIGS. 1 to 3, the cup body 13 has a square shape in plan view, and one side in the length direction (Y direction in FIG. 3) is larger than the discharge port 41 of the application nozzle 4. It is set to be. However, as will be described later, in the coating apparatus 1, since the coating liquid is hardly discharged from the coating nozzle 4 to the cup body 13, the cup body 13 is not necessarily provided.
前記制御部7は、塗布装置1における各機器の動作を統括制御するものであり、例えばコンピュータからなり、不図示のプログラム格納部を有している。このプログラム格納部には、後述の作用で説明する塗布液の塗布処理が行われるように命令が組まれたプログラムが格納され、このプログラムが制御部に読み出されることで、制御部7は、ガス供給機構3による撥レジスト化ガスや親レジスト化ガスの供給、塗布ノズル4の移動、塗布ノズル4からウエハWへの塗布液の供給、スピンチャック2によるウエハの回転、塗布液タンク5の液面の調整、塗布液貯槽6から塗布液タンク5への塗布液の供給などを制御する。前記プログラムは、例えばハードディスク、コンパクトディスク、マグネットオプティカルディスクまたはメモリーカードなどの記憶媒体に収納された状態でプログラム格納部に格納される。
The control unit 7 performs overall control of the operation of each device in the coating apparatus 1, and is composed of, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program in which an instruction is set so as to perform the coating process of the coating liquid, which will be described later, and the control unit 7 reads the program into the control unit 7 to Supply of resist-repelling gas or parent resist gas by supply mechanism 3, movement of coating nozzle 4, supply of coating liquid from coating nozzle 4 to wafer W, rotation of wafer by spin chuck 2, liquid level of coating liquid tank 5 And the supply of the coating liquid from the coating liquid storage tank 6 to the coating liquid tank 5 are controlled. The program is stored in the program storage unit while being stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.
前記塗布液タンク5の液面の調整は、例えば次のようにして行われる。制御部7は、スピンチャック2上のウエハWに対して塗布液の吐出を開始する開始指令を塗布ノズル4の移動機構44及び液面センサ52に出力し、この指令に基づいて塗布ノズル4は塗布開始位置に移動する。この塗布開始位置とは、ウエハWの一端側の端部に塗布液を吐出する位置である。
The liquid level of the coating liquid tank 5 is adjusted as follows, for example. The control unit 7 outputs a start command for starting the discharge of the coating liquid to the wafer W on the spin chuck 2 to the moving mechanism 44 and the liquid level sensor 52 of the coating nozzle 4, and the coating nozzle 4 is based on this command. Move to application start position. The application start position is a position at which the application liquid is discharged to the end portion on one end side of the wafer W.
一方この開始指令に基づいて、液面センサ52では塗布液タンク5内の塗布液の液面の高さ位置を検出し、制御部7ではこれを基準高さ位置として取得する。そしてこれ以降所定時間例えば0.1秒毎に液面センサ52により液面の高さ位置を検出し、制御部7に出力する。そして制御部7では、例えば検出した高さ位置と基準高さ位置とを比較して、前記塗布液タンク5内の塗布液の液面の高さ位置が基準高さ位置に揃うまで、昇降機構53に塗布液タンク5を昇降させるように指令を出力する。例えば検出された高さ位置が基準高さ位置よりも1mm低い場合には、昇降機構53により塗布タンク5を開始指令時の高さよりも1mm高くなるように制御する。前記昇降機構53では、例えばボールネジ機構の回転数により、塗布タンク5を1mm高くするときの回転数が予め把握されているので、制御部7からの指令に基づいて所定数回転させることにより塗布タンク5の高さの制御が行われる。
On the other hand, based on this start command, the liquid level sensor 52 detects the height position of the liquid level of the coating liquid in the coating liquid tank 5, and the control unit 7 acquires this as the reference height position. Thereafter, the liquid level sensor 52 detects the liquid level height position for a predetermined time, for example, every 0.1 second, and outputs it to the control unit 7. Then, the control unit 7 compares the detected height position with the reference height position, for example, until the height position of the liquid surface of the coating liquid in the coating liquid tank 5 is aligned with the reference height position. A command is output to 53 to raise and lower the coating liquid tank 5. For example, when the detected height position is 1 mm lower than the reference height position, the elevating mechanism 53 controls the application tank 5 to be 1 mm higher than the height at the start command. In the elevating mechanism 53, for example, the rotation speed when the application tank 5 is raised by 1 mm is known in advance by the rotation speed of the ball screw mechanism, so that the application tank is rotated by a predetermined number based on a command from the control unit 7. A height of 5 is controlled.
続いて上述の塗布装置1の作用について図7及び図8を参照しながら説明する。先ず処理容器10内に図示しない搬送アームによりウエハWを搬送して、スピンチャック2上にウエハWを受け渡す。このウエハWは、例えば他のユニットにてヘキサメチルジシラサン(HMDS)ガスを供給してウエハW表面を撥水性にするHMDS処理が行われたものである。このHMDS処理を行うことにより、現像時におけるレジストパターンの剥離が抑えられる。
Subsequently, the operation of the above-described coating apparatus 1 will be described with reference to FIGS. First, the wafer W is transferred into the processing container 10 by a transfer arm (not shown), and the wafer W is delivered onto the spin chuck 2. This wafer W is, for example, subjected to HMDS processing in which hexamethyldisilazane (HMDS) gas is supplied in another unit to make the surface of the wafer W water repellent. By performing this HMDS treatment, peeling of the resist pattern during development can be suppressed.
またウエハWの受け渡しは、ウエハWの周縁側を保持する搬送アームの場合には、スピンチャック2のテーブル21を搬送アームの進退動作を阻害しない大きさに設定し、スピンチャック2と搬送アームとを相対的に昇降させることにより行われる。またスピンチャック2に図示しないウエハWの突き上げピンを設け、この突き上げピンと搬送アームとを相対的に昇降させることによりウエハWの受け渡しを行うようにしてもよい。
In the case of the transfer arm that holds the peripheral side of the wafer W, the wafer W is transferred by setting the table 21 of the spin chuck 2 to a size that does not hinder the forward / backward movement of the transfer arm. This is done by relatively raising and lowering. Further, a push-up pin (not shown) of the wafer W may be provided on the spin chuck 2 and the wafer W may be transferred by moving the push-up pin and the transfer arm relatively up and down.
次いで図7(a)に示すように、ガス供給機構3をガス供給位置まで下降させ、ウエハWの周縁領域11に撥レジスト化ガスを供給すると共に、ウエハWの中央領域12に親レジスト化ガスを供給する。このとき塗布ノズル4は待機位置に置かれている。こうしてウエハWに対して所定流量の撥レジスト化ガス及び親レジスト化ガスを供給することにより、前記周縁領域11を撥レジスト化すると共に、前記中央領域12を親レジスト化した後、ガス供給機構3を待機位置まで上昇させる。ここで撥レジスト化ガス及び親レジスト化ガスの供給は同時に行ってもよいし、一方を供給した後、他方を供給するようにしてもよい。また撥レジスト化ガス及び親レジスト化ガスの供給を同時に行うとしても、必ずしも供給開始及び供給停止のタイミングが同時である必要はなく、供給開始や供給停止のタイミングはずれていてもよい。
Next, as shown in FIG. 7A, the gas supply mechanism 3 is lowered to the gas supply position, and the resist repellent gas is supplied to the peripheral region 11 of the wafer W and the parent resist forming gas is supplied to the central region 12 of the wafer W. Supply. At this time, the coating nozzle 4 is placed at the standby position. In this way, by supplying a predetermined flow rate of resist repellent gas and parent resist forming gas to the wafer W, the peripheral region 11 is resist repelled and the central region 12 is parent resisted, and then the gas supply mechanism 3 Is raised to the standby position. Here, the resist-repelling gas and the parent resist-forming gas may be supplied simultaneously, or after one is supplied, the other may be supplied. Even if the resist-repelling gas and the parent resist-forming gas are supplied at the same time, the supply start timing and supply stop timing are not necessarily the same, and the supply start timing and supply stop timing may be different.
次いでガス供給機構3が待機位置に戻った後、制御部7から塗布液の塗布開始指令を移動機構44及び液面センサ52に出力する。これにより塗布ノズル4は図7(b)に示す塗布開始位置まで移動し、液面センサ52は塗布液タンク5内の液面の高さ位置を検出して、制御部7に出力する。こうして制御部7ではこの液面の高さ位置を基準高さ位置として取得した後、バルブV1及びポンプP1に開始指令を出力する。これによりバルブV1が開き、ポンプP1により所定量の塗布液Rが塗布液タンク5から塗布ノズル4に送り出される。
Next, after the gas supply mechanism 3 returns to the standby position, the control unit 7 outputs a coating liquid coating start command to the moving mechanism 44 and the liquid level sensor 52. As a result, the application nozzle 4 moves to the application start position shown in FIG. 7B, and the liquid level sensor 52 detects the height position of the liquid level in the application liquid tank 5 and outputs it to the control unit 7. In this way, the control unit 7 obtains the height position of the liquid level as the reference height position, and then outputs a start command to the valve V1 and the pump P1. Accordingly, the valve V1 is opened, and a predetermined amount of the coating liquid R is sent from the coating liquid tank 5 to the coating nozzle 4 by the pump P1.
ここで既述のように、塗布ノズル4とウエハWとの間では毛細管現象により塗布液Rが塗布されるが、この毛細管現象は塗布ノズル4の吐出口41とウエハW表面との間が塗布液Rにより接触する場合に発生する。従って塗布の開始時には、ポンプP1により塗布液Rを送液して、確実に吐出口41とウエハWとの間に塗布液Rを存在させておくことにより、この後ポンプP1を停止しても毛細管現象により吐出口41から塗布液が引き出されることになる。この際、ポンプP1により塗布液Rを押し出す量は、吐出口41から吐出される塗布液RがウエハWに接液する程度であり、塗布ノズル4の下面とウエハW表面との距離L2は、0.1mm~0.4mm程度であることから極めて少量である。また塗布ノズル4の吐出口41はウエハWの直径をカバーする大きさであることから、塗布開始時には、吐出口41において塗布対象のウエハWが存在しない領域がある。しかしながら既述のようにポンプP1により吐出口41から塗布液を押し出す量は極めて少量であることから、塗布対象のウエハWが存在しない吐出口41においては塗布液Rが盛り上がるものの、ウエハWに接液した吐出口41側に塗布液Rが引っ張られる状態になる。このため結果として塗布対象のウエハWが存在しない吐出口41においても塗布液がカップ体13に落下するおそれはない。
Here, as described above, the coating liquid R is applied between the coating nozzle 4 and the wafer W by a capillary phenomenon, and this capillary phenomenon is applied between the discharge port 41 of the coating nozzle 4 and the surface of the wafer W. Occurs when contacting with liquid R. Accordingly, at the start of coating, the coating liquid R is fed by the pump P1 to ensure that the coating liquid R is present between the discharge port 41 and the wafer W, so that the pump P1 can be stopped thereafter. The coating liquid is drawn out from the discharge port 41 by capillary action. At this time, the amount of the coating liquid R pushed out by the pump P1 is such that the coating liquid R discharged from the discharge port 41 comes into contact with the wafer W, and the distance L2 between the lower surface of the coating nozzle 4 and the surface of the wafer W is Since it is about 0.1 mm to 0.4 mm, it is a very small amount. Further, since the discharge port 41 of the coating nozzle 4 is large enough to cover the diameter of the wafer W, there is a region where the wafer W to be coated does not exist at the discharge port 41 at the start of coating. However, as described above, the amount of the coating liquid pushed out from the discharge port 41 by the pump P1 is very small. Therefore, although the coating liquid R rises at the discharge port 41 where the wafer W to be coated does not exist, it contacts the wafer W. The coating liquid R is pulled toward the liquid discharge port 41 side. For this reason, as a result, the coating liquid does not possibly fall onto the cup body 13 even at the discharge port 41 where the wafer W to be coated does not exist.
続いて図7(c)に示すように、塗布ノズル4を移動機構44により、スピンチャック2上に保持されたウエハWの一端側から他端側に移動させ、ウエハWに対して塗布液Rを塗布して塗布膜を形成する。このとき、既述のように塗布ノズル4内の塗布液の流路(流路43、塗布液流路42、吐出口41)は、毛細管状に形成されているので、塗布ノズル4とウエハWとの間では毛細管現象により塗布液Rが塗布される。つまり塗布ノズル4の吐出口41とウエハWとは塗布液Rを介して接触しており、塗布ノズル4の移動に伴い、ウエハWにより吐出口41から塗布液Rが毛細管現象により引き出されるようにして塗布される。そして塗布液タンク5では、上面が大気開放されており、塗布液タンク5と塗布ノズル4との間では連通管の原理が作用しているので、前記吐出口41から引き出された
分を補償する分の塗布液が、塗布液タンク5により塗布ノズル4に供給される。 Subsequently, as shown in FIG. 7C, thecoating nozzle 4 is moved from one end side to the other end side of the wafer W held on the spin chuck 2 by the moving mechanism 44, and the coating solution R is applied to the wafer W. Is applied to form a coating film. At this time, since the flow path (flow path 43, coating liquid flow path 42, discharge port 41) of the coating liquid in the coating nozzle 4 is formed in a capillary shape as described above, the coating nozzle 4 and the wafer W are formed. In between, the coating liquid R is apply | coated by capillarity. That is, the discharge port 41 of the coating nozzle 4 and the wafer W are in contact with each other via the coating liquid R, and the coating liquid R is drawn from the discharge port 41 by the wafer W by capillary action as the coating nozzle 4 moves. Applied. In the coating liquid tank 5, the upper surface is open to the atmosphere, and the principle of the communication pipe acts between the coating liquid tank 5 and the coating nozzle 4, so that the amount drawn out from the discharge port 41 is compensated. The coating liquid is supplied to the coating nozzle 4 by the coating liquid tank 5.
分を補償する分の塗布液が、塗布液タンク5により塗布ノズル4に供給される。 Subsequently, as shown in FIG. 7C, the
この際、液面センサ52では所定のタイミングで塗布液タンク5内の塗布液の液面高さが検出され、この検出値が制御部7に出力される。そして制御部7ではこの検出値と前記基準高さ位置とを比較し、塗布液タンク5内の塗布液の液面が基準高さ位置に揃うように昇降機構53を制御する。このように塗布液タンク5内の液面の高さを揃えることにより、塗布ノズル4の吐出口41からの塗布液の吐出量を揃えることができる。こうして図8(a)に示すように、ウエハWの他端側まで塗布ノズル4を移動させて、ウエハWに対する塗布液Rの塗布を行った後、制御部7から塗布終了指令を移動機構44、バルブV1及び液面センサ52に出力する。これによりバルブV1を閉じ、液面センサ52による液面の検出を終了し、移動機構44により塗布ノズル4は待機位置まで移動する。ここで終了時においても、塗布ノズル4の吐出口41において塗布対象のウエハWが存在しない領域があるが、対応するウエハWがない吐出口41では毛細管現象が発生せず、ウエハWによって塗布液が引き出されることがない。従って、塗布対象のウエハWがない吐出口41から塗布液が液垂れするといったことはほとんど起こらない。このようにしてウエハWには例えば10μm程度の膜厚で塗布液Rであるレジスト液の塗布膜が形成される。
At this time, the liquid level sensor 52 detects the liquid level of the coating liquid in the coating liquid tank 5 at a predetermined timing, and outputs the detected value to the control unit 7. Then, the control unit 7 compares this detected value with the reference height position, and controls the lifting mechanism 53 so that the liquid level of the coating liquid in the coating liquid tank 5 is aligned with the reference height position. Thus, by equalizing the height of the liquid surface in the coating liquid tank 5, the discharge amount of the coating liquid from the discharge port 41 of the coating nozzle 4 can be made uniform. Thus, as shown in FIG. 8A, the coating nozzle 4 is moved to the other end side of the wafer W to apply the coating liquid R onto the wafer W, and then a coating end command is sent from the control unit 7 to the moving mechanism 44. To the valve V1 and the liquid level sensor 52. Thereby, the valve V1 is closed, the detection of the liquid level by the liquid level sensor 52 is finished, and the application nozzle 4 is moved to the standby position by the moving mechanism 44. Even at the end, there is a region where the wafer W to be coated does not exist in the ejection port 41 of the coating nozzle 4, but no capillary phenomenon occurs in the ejection port 41 without the corresponding wafer W, and the coating liquid is applied by the wafer W. Will not be pulled out. Therefore, the coating liquid hardly drips from the ejection port 41 where there is no wafer W to be coated. In this way, a coating film of a resist solution, which is the coating solution R, is formed on the wafer W with a film thickness of, for example, about 10 μm.
この後図8(b)に示すように、塗布液Rが塗布されたウエハWを、ウエハWから塗布液Rが飛散しない回転数で回転させる。ここで塗布ノズル4から毛細管現象を利用して塗布液を塗布しているので、ウエハW上の塗布膜の膜厚は、10μm程度と極めて薄い。このためウエハWを回転しても塗布液Rが飛散しにくい状態であり、塗布液Rが飛散しない回転数とは、例えば100rpm~500rpm程度の回転数をいう。このように塗布液Rが塗布されたウエハWを回転させることにより、遠心力によってウエハW上の塗布液Rが移動するため、ウエハW表面における塗布膜の膜厚の均一性を高めることができる。この一連の工程により、ウエハW表面に塗布液Rが塗布されて塗布膜が形成されるが、所定枚数のウエハWに対して塗布液Rの塗布を行った後、塗布液貯槽6から所定量の塗布液Rが塗布液タンク5内に供給される。
Thereafter, as shown in FIG. 8B, the wafer W coated with the coating liquid R is rotated at a rotational speed at which the coating liquid R does not scatter from the wafer W. Here, since the application liquid is applied from the application nozzle 4 by using the capillary phenomenon, the film thickness of the application film on the wafer W is as extremely thin as about 10 μm. For this reason, the coating liquid R is hardly scattered even when the wafer W is rotated, and the rotation speed at which the coating liquid R does not splash means, for example, a rotation speed of about 100 rpm to 500 rpm. By rotating the wafer W coated with the coating liquid R in this way, the coating liquid R on the wafer W is moved by centrifugal force, so that the uniformity of the coating film thickness on the surface of the wafer W can be improved. . Through this series of steps, the coating liquid R is applied to the surface of the wafer W to form a coating film. After the coating liquid R is applied to a predetermined number of wafers W, a predetermined amount is applied from the coating liquid storage tank 6. The coating liquid R is supplied into the coating liquid tank 5.
ここで既述のようにウエハW上の塗布膜の厚さは極めて薄く、また塗布液タンク5内の塗布液の液面高さが一定になるように調整を行っているため、ある程度の均一性を確保しながら塗布液RをウエハW表面に塗布することができる。しかしながら近年レジストパターンがより精密になっているので、より塗布膜の膜厚の均一性を高くすることが要請されている。この際、塗布液タンク5内の塗布液Rの液面調整を精密に行えば理論上、塗布膜の膜厚均一性は向上するが、実際には塗布液Rの塗布量が極めて少ないため、液面の変化量も微小であり、前記液面の高さ位置を常に一定に維持することは困難である。これに対して、予めある程度の均一性を確保しながらウエハW表面に塗布液Rを塗布しておき、さらにウエハWを回転させることにより、塗布膜の膜厚均一性をより高めることは、簡易な手法により、確実に膜厚均一性を向上できるため、有効である。
Here, as described above, the thickness of the coating film on the wafer W is extremely thin, and the adjustment is made so that the level of the coating liquid in the coating liquid tank 5 is constant. The coating liquid R can be applied to the surface of the wafer W while securing the properties. However, since the resist pattern has become more precise in recent years, it has been demanded to increase the uniformity of the coating film thickness. At this time, if the liquid level of the coating liquid R in the coating liquid tank 5 is precisely adjusted, the film thickness uniformity of the coating film is theoretically improved. However, since the coating amount of the coating liquid R is actually very small, The amount of change in the liquid level is also very small, and it is difficult to always keep the height position of the liquid level constant. On the other hand, it is easy to increase the film thickness uniformity of the coating film by applying the coating liquid R to the surface of the wafer W in advance while ensuring a certain degree of uniformity, and further rotating the wafer W. This method is effective because the film thickness uniformity can be improved with certainty.
この際、ウエハWを回転させることにより、ウエハW上の塗布液Rは遠心力によって外側に移動しようとするが、ウエハW外周での表面張力により、塗布液Rはウエハ外周からこぼれにくくなっている。またウエハWの周縁領域11は撥レジスト化されているので、回転前におけるウエハW上の塗布液Rは最外周からより中心側に存在しており、仮に後の工程においてスピンチャック2を高速で回転させて乾燥を行う場合であっても、スピン条件設定のマージンを広げることができる。
At this time, by rotating the wafer W, the coating liquid R on the wafer W tends to move outward by centrifugal force. However, the coating liquid R is less likely to spill from the outer periphery of the wafer due to the surface tension on the outer periphery of the wafer W. Yes. Further, since the peripheral region 11 of the wafer W is resist-repellent, the coating liquid R on the wafer W before the rotation is present on the center side from the outermost periphery, so that the spin chuck 2 can be moved at a high speed in the subsequent process. Even in the case of drying by rotating, the margin for setting spin conditions can be widened.
以上において、上述の実施の形態では、塗布ノズル4の吐出口41から毛細管現象により塗布液Rを引き出してウエハWに塗布しており、毛細管現象により引き出される塗布液Rの量は極めて少ない。また塗布ノズル4の吐出口41をウエハWに近接させた状態で、塗布ノズル4を移動させながら塗布を行っているため、スピンコーティングのようにウエハWから飛散する塗布液Rがない。このようなことから、塗布液Rの省量化を図ることができる。
As described above, in the above-described embodiment, the coating liquid R is drawn out from the discharge port 41 of the coating nozzle 4 by the capillary phenomenon and applied to the wafer W, and the amount of the coating liquid R drawn out by the capillary phenomenon is extremely small. Further, since the application is performed while moving the application nozzle 4 while the discharge port 41 of the application nozzle 4 is close to the wafer W, there is no application liquid R scattered from the wafer W like spin coating. For this reason, the amount of the coating liquid R can be saved.
さらにウエハWから塗布液Rが飛散するおそれがないため、スピンチャック2に保持されたウエハWの上方側から下方側に亘って塗布液Rの飛散する領域をカバーするような大きなカップ体13を設ける必要がなく、装置の小型化を図ることができる。さらに毛細管現象により塗布液Rを塗布した後、さらに塗布液Rが飛散しない程度の回転数でウエハWを回転させているので、塗布膜の膜厚において高い面内均一性を確保することができ、精密なレジストパターンを形成する場合に有効である。
Further, since there is no possibility that the coating liquid R scatters from the wafer W, the large cup body 13 that covers the region where the coating liquid R scatters from the upper side to the lower side of the wafer W held by the spin chuck 2 is provided. There is no need to provide the device, and the device can be downsized. Further, after applying the coating liquid R by capillary action, the wafer W is rotated at such a rotational speed that the coating liquid R does not scatter, so that high in-plane uniformity can be ensured in the thickness of the coating film. It is effective when a precise resist pattern is formed.
以上において、塗布装置1は図9に示すように構成してもよい。この例が上述の実施の形態の塗布装置と異なる点は、塗布液Rの塗布開始時にポンプP1により塗布ノズル4から塗布液Rを押し出す代わりに、補助ノズル8を用いて、塗布ノズル4とウエハWとの間に塗布液Rを供給することである。この補助ノズル8はバルブやポンプ等を備えた塗布液供給部81に接続され、例えば塗布液タンク5と塗布ノズル4との間に、塗布ノズル4の移動やスピンチャック2へのウエハWの受け渡しを阻害しないように設けられている。
In the above, the coating apparatus 1 may be configured as shown in FIG. This example is different from the coating apparatus of the above-described embodiment in that the coating nozzle 4 and the wafer are used by using the auxiliary nozzle 8 instead of pushing the coating liquid R from the coating nozzle 4 by the pump P1 at the start of coating of the coating liquid R. The coating liquid R is supplied between the terminal W and W. The auxiliary nozzle 8 is connected to a coating liquid supply unit 81 including a valve, a pump, and the like. For example, the coating nozzle 4 is moved between the coating liquid tank 5 and the coating nozzle 4 and the wafer W is transferred to the spin chuck 2. It is provided so as not to disturb.
そしてこの例では制御部7からの塗布開始指令に基づいて、例えば塗布ノズル4が塗布開始位置に移動したタイミングで、補助ノズル8から塗布ノズル4とウエハW表面との間に塗布液Rを供給するように構成される。このときに補助ノズル8から供給される塗布液Rの量は、塗布ノズル4の吐出口41とウエハW表面との間を塗布液Rにて接続できる程度である。このような構成においても、第1の実施の形態と同様に、塗布液の省量化及び小型化を図ることができ、塗布液の膜厚について高い均一性を得ることができる。
In this example, the coating liquid R is supplied between the coating nozzle 4 and the surface of the wafer W from the auxiliary nozzle 8 at the timing when the coating nozzle 4 is moved to the coating start position, for example, based on the coating start command from the control unit 7. Configured to do. At this time, the amount of the coating liquid R supplied from the auxiliary nozzle 8 is such that the coating liquid R can connect the discharge port 41 of the coating nozzle 4 and the surface of the wafer W. Even in such a configuration, similarly to the first embodiment, it is possible to save and reduce the size of the coating liquid, and to obtain high uniformity in the film thickness of the coating liquid.
さらに塗布装置は図10に示すように構成してもよい。この例が第1の実施の形態の塗布装置1と異なる点は、塗布ノズル4と共に塗布液タンク5も移動する構成であることである。例えばこの例では、ノズルユニット83内部に塗布ノズル4と塗布液タンク5とがまとめられており、このノズルユニット83が移動機構44により吐出口41と交差する方向に移動自在に構成されている。
Further, the coating apparatus may be configured as shown in FIG. The difference between this example and the coating apparatus 1 of the first embodiment is that the coating liquid tank 5 moves together with the coating nozzle 4. For example, in this example, the application nozzle 4 and the application liquid tank 5 are combined in the nozzle unit 83, and the nozzle unit 83 is configured to be movable in a direction intersecting the discharge port 41 by the moving mechanism 44.
ノズルユニット83内部には塗布ノズル4と塗布液タンク5とを結ぶ塗布液供給路51や、塗布液タンク5内の塗布液Rの液面を検出する液面センサ52、塗布液タンク5の昇降機構53も設けられている。そして液面センサ52からの検出値に基づいて制御部7により塗布液タンク5の昇降機構53が制御されるように構成されている。これらの構成は第1の実施の形態の塗布装置と同様である。また塗布液タンク5と塗布液貯槽6とを結ぶ供給路61はフレキシブルに構成されており、ノズルユニット83が移動したときに供給路61の形状が変化するようになっている。このような構成においても、第1の実施の形態と同様に、塗布液の省量化及び小型化を図ることができ、塗布液の膜厚について高い均一性を得ることができる。
Inside the nozzle unit 83, a coating liquid supply path 51 that connects the coating nozzle 4 and the coating liquid tank 5, a liquid level sensor 52 that detects the liquid level of the coating liquid R in the coating liquid tank 5, and the elevation of the coating liquid tank 5. A mechanism 53 is also provided. Based on the detection value from the liquid level sensor 52, the controller 7 is configured to control the lifting mechanism 53 of the coating liquid tank 5. These configurations are the same as those of the coating apparatus according to the first embodiment. Further, the supply path 61 connecting the coating liquid tank 5 and the coating liquid storage tank 6 is configured to be flexible, and the shape of the supply path 61 changes when the nozzle unit 83 moves. Even in such a configuration, similarly to the first embodiment, it is possible to save and reduce the size of the coating liquid, and to obtain high uniformity in the film thickness of the coating liquid.
さらに上述の構成では、塗布ノズル4をウエハWに対して吐出口41と交差する方向に移動させたが、塗布ノズル4側を動かさずにスピンチャック2側を吐出口41と交差する方向に移動させるようにしてもよい。また図11に示すように、塗布ノズル4を、スピンチャック2上のウエハWの中心と、吐出口41の長さ方向の中心とを対応させると共に、吐出口41がウエハW表面と近接するように配置し、スピンチャック2側を半回転させることにより、塗布液Rを塗布するようにしてもよい。この際、スピンチャック2側を回転させるのではなく、塗布ノズル4側を吐出口41の長さ方向の中心を軸として回転させるようにしてもよい。この場合、塗布ノズル4の長さ方向における単位面積あたりの塗布液Rの吐出量を揃えるために、吐出口41からの塗布液Rの吐出速度をウエハWの中心側で遅く、ウエハWの外周側で速くするように制御してもよい。
Further, in the above-described configuration, the coating nozzle 4 is moved in the direction intersecting the ejection port 41 with respect to the wafer W, but the spin chuck 2 side is moved in the direction intersecting the ejection port 41 without moving the coating nozzle 4 side. You may make it make it. As shown in FIG. 11, the coating nozzle 4 is made to correspond to the center of the wafer W on the spin chuck 2 and the center of the discharge port 41 in the length direction, and the discharge port 41 is close to the surface of the wafer W. And the coating liquid R may be applied by rotating the spin chuck 2 side halfway. At this time, instead of rotating the spin chuck 2 side, the coating nozzle 4 side may be rotated about the center of the discharge port 41 in the length direction. In this case, in order to align the discharge amount of the coating liquid R per unit area in the length direction of the coating nozzle 4, the discharge speed of the coating liquid R from the discharge port 41 is slow on the center side of the wafer W, and the outer periphery of the wafer W You may control to make it quick on the side.
続いて図12及び図13を例にして、塗布ノズル4の吐出口41が上向きに配置される実施の形態について説明する。図12(a)中84は、ウエハWを略水平に吸着保持すると共に、水平軸まわりに反転させる反転機構である。この反転機構は、例えば真空吸着又は静電吸着によりウエハWを吸着保持するステージ86と、このステージ86を水平な回転軸85に沿って回転させる回転機構87と、を備えている。例えばステージ86は、ウエハWの中央側を吸着保持するように構成されている。そして例えば図12(b)に示すように、ウエハWの周縁側を保持する搬送アーム15との間でウエハWの受け渡しを行う際に、搬送アーム15をステージ86に対して進退させても搬送アーム15とステージ86とが接触しない大きさに設定されている。
Subsequently, an embodiment in which the discharge port 41 of the coating nozzle 4 is disposed upward will be described with reference to FIGS. 12 and 13 as an example. In FIG. 12A, reference numeral 84 denotes a reversing mechanism that sucks and holds the wafer W substantially horizontally and reverses it around the horizontal axis. The reversing mechanism includes a stage 86 that holds the wafer W by vacuum suction or electrostatic suction, for example, and a rotation mechanism 87 that rotates the stage 86 along a horizontal rotation shaft 85. For example, the stage 86 is configured to suck and hold the center side of the wafer W. Then, for example, as shown in FIG. 12B, when the wafer W is transferred to and from the transfer arm 15 that holds the peripheral side of the wafer W, the transfer is performed even if the transfer arm 15 is moved forward and backward with respect to the stage 86. The size is set such that the arm 15 and the stage 86 do not contact each other.
ガス供給機構3、塗布ノズル4、塗布液タンク5等は、塗布ノズル4の吐出口41が上側を向いている以外は第1の実施の形態の塗布装置1と同様に構成されている。つまりこの例においても塗布ノズル4内における吐出口41を含む塗布液の流路は毛細管状に構成されると共に、塗布液タンク5内の塗布液Rの液面の高さは、塗布ノズル4の吐出口41の高さよりも低くなるように構成されている。こうして塗布ノズル4の吐出口41とウエハWとの間では毛細管現象により塗布液Rが引き出され、塗布ノズル4と塗布液タンク5との間では連通管の原理により塗布液Rが供給されるようになっている。
The gas supply mechanism 3, the coating nozzle 4, the coating liquid tank 5 and the like are configured in the same manner as the coating apparatus 1 of the first embodiment except that the discharge port 41 of the coating nozzle 4 faces upward. That is, also in this example, the flow path of the coating liquid including the discharge port 41 in the coating nozzle 4 is configured in a capillary shape, and the height of the coating liquid R in the coating liquid tank 5 is set to be the height of the coating nozzle 4. The discharge port 41 is configured to be lower than the height. Thus, the coating liquid R is drawn out by capillary action between the discharge port 41 of the coating nozzle 4 and the wafer W, and the coating liquid R is supplied between the coating nozzle 4 and the coating liquid tank 5 according to the principle of the communication pipe. It has become.
このような構成では、先ず図13(a)に示すように、搬送アーム15からステージ86にウエハWを受け渡し、当該ステージ86上にウエハWを吸着保持させる。そしてガス供給機構3をウエハWにガスを供給する位置に下降させ、ウエハWの周縁領域11及び中央領域12に夫々撥レジスト化ガス及び親レジスト化ガスを供給する。ここでステージ86に搬送アーム15からウエハWを受け渡すときには、ウエハWを保持した搬送アーム15をステージ86の上から下降させてステージ86上にウエハWを受け渡し、その後搬送アーム15を退行させることにより行う。
In such a configuration, first, as shown in FIG. 13A, the wafer W is transferred from the transfer arm 15 to the stage 86, and the wafer W is sucked and held on the stage 86. Then, the gas supply mechanism 3 is lowered to a position where gas is supplied to the wafer W, and a resist repellent gas and a parent resist forming gas are supplied to the peripheral region 11 and the central region 12 of the wafer W, respectively. Here, when the wafer W is transferred from the transfer arm 15 to the stage 86, the transfer arm 15 holding the wafer W is lowered from above the stage 86 to transfer the wafer W onto the stage 86, and then the transfer arm 15 is retracted. To do.
次いで図13(b)に示すように、ステージ86上にウエハWを吸着保持させた状態で、当該ステージ86を回転機構87により反転させ、ウエハW表面を下側に向ける。このウエハWの反転動作を行っているときには、予めガス供給機構3及び塗布ノズル4を、前記反転動作を阻害しないように待機位置に移動しておく。そして塗布ノズル4の吐出口41をウエハW表面に近接させた状態で、ウエハWの一端側から他端側まで移動機構44により移動させて、第1の実施の形態と同様に、ウエハW表面に毛細管現象を利用して塗布ノズル4から塗布液Rを塗布する。こうしてウエハWに塗布液Rの塗布を行った後、回転機構87によりウエハW表面が上側を向くようにステージ86を反転させる。この際その表面に塗布液Rが塗布されたウエハWを反転することになるが、塗布膜の膜厚は10μm
程度と非常に薄いため、反転動作中に液垂れや、液の偏りが発生するおそれはない。 Next, as shown in FIG. 13B, in a state where the wafer W is sucked and held on thestage 86, the stage 86 is reversed by the rotation mechanism 87, and the surface of the wafer W is directed downward. During the reversing operation of the wafer W, the gas supply mechanism 3 and the coating nozzle 4 are moved to the standby position in advance so as not to disturb the reversing operation. Then, in a state where the discharge port 41 of the coating nozzle 4 is close to the surface of the wafer W, the wafer W is moved from one end side to the other end side of the wafer W by the moving mechanism 44, and the surface of the wafer W is the same as in the first embodiment. The coating solution R is applied from the coating nozzle 4 using a capillary phenomenon. After the coating liquid R is applied to the wafer W in this way, the stage 86 is inverted by the rotating mechanism 87 so that the surface of the wafer W faces upward. At this time, the wafer W having the coating liquid R applied on its surface is inverted, but the coating film thickness is 10 μm.
Since it is very thin, there is no possibility of dripping or deviation of liquid during the reversing operation.
程度と非常に薄いため、反転動作中に液垂れや、液の偏りが発生するおそれはない。 Next, as shown in FIG. 13B, in a state where the wafer W is sucked and held on the
Since it is very thin, there is no possibility of dripping or deviation of liquid during the reversing operation.
こうしてステージ86上に上を向いた状態で置かれたウエハWは、搬送アーム15により受け取られて、回転ユニット88に搬送される。この回転ユニット88は、例えば図13(c)に示すように、ウエハWを吸着保持すると共に鉛直軸まわりに回転させる回転ステージ89を備えており、搬送アーム15から当該回転ステージ89にウエハWが受け渡される。回転ユニット88では、塗布液Rが塗布されたウエハWに対して、当該塗布液RがウエハWから飛散しない回転数例えば100rpm~500rpmで回転させる。
Thus, the wafer W placed on the stage 86 facing upward is received by the transfer arm 15 and transferred to the rotation unit 88. For example, as shown in FIG. 13C, the rotating unit 88 includes a rotating stage 89 that holds the wafer W by suction and rotates it around the vertical axis, and the wafer W is transferred from the transfer arm 15 to the rotating stage 89. Delivered. The rotating unit 88 rotates the wafer W coated with the coating liquid R at a rotation speed at which the coating liquid R does not scatter from the wafer W, for example, 100 rpm to 500 rpm.
このような構成においても、上述の実施の形態と同様に、塗布ノズル4から毛細管現象を利用して塗布液Rが塗布されるので、塗布液Rの省量化及び装置の小型化を図ることができ、塗布液Rの塗布後にウエハWを回転させているので、塗布液Rの膜厚の均一性をより高めることができる。
Even in such a configuration, since the coating liquid R is applied from the coating nozzle 4 using the capillary phenomenon as in the above-described embodiment, it is possible to reduce the amount of the coating liquid R and reduce the size of the apparatus. In addition, since the wafer W is rotated after application of the coating liquid R, the uniformity of the film thickness of the coating liquid R can be further improved.
またこのように塗布ノズル4の吐出口41を上向きに配置した場合であっても、塗布開始時に、補助ノズル8からウエハWと塗布ノズル4との間に塗布液Rを供給するようにしてもよいし、また塗布ノズル4と塗布液タンク5とを一緒に移動させるようにしてもよい。
Even when the discharge port 41 of the coating nozzle 4 is arranged upward as described above, the coating liquid R is supplied between the wafer W and the coating nozzle 4 from the auxiliary nozzle 8 at the start of coating. Alternatively, the application nozzle 4 and the application liquid tank 5 may be moved together.
以上において、本発明では、ウエハWに塗布液Rを塗布し、次いでウエハW上の塗布液RがウエハWから飛散しない回転数で当該ウエハWを回転させた後、回転数を例えば500rpm~2000rpm程度に大きくしてウエハ上の塗布液Rを乾燥させる工程を行うようにしてもよい。
As described above, in the present invention, the coating liquid R is applied to the wafer W, and then the wafer W is rotated at a rotational speed at which the coating liquid R on the wafer W does not scatter from the wafer W, and then the rotational speed is, for example, 500 rpm to 2000 rpm. The process of drying the coating liquid R on the wafer may be performed by increasing it to the extent.
また本発明は、塗布ノズル4の吐出口41を、前記ウエハWに対して近接させた状態で相対的に移動させながら、前記吐出口41から毛細管現象により塗布液Rを引き出してウエハWに塗布する工程と、次いでウエハW上の塗布液RがウエハWから飛散しない回転数で当該ウエハWを回転させる工程とを実施すればよく、塗布装置1の構成は上述の実施の形態には限られない。従って塗布ノズル4からの吐出開始時に塗布液Rを押し出すポンプP1や補助ノズル8は必ずしも必要な構成ではない。
Further, in the present invention, the coating liquid R is drawn from the ejection port 41 by a capillary phenomenon while being applied to the wafer W while the ejection port 41 of the coating nozzle 4 is relatively moved while being close to the wafer W. And the step of rotating the wafer W at a rotation speed at which the coating liquid R on the wafer W does not scatter from the wafer W, and the configuration of the coating apparatus 1 is limited to the above-described embodiment. Absent. Accordingly, the pump P1 and the auxiliary nozzle 8 that push out the coating liquid R at the start of discharge from the coating nozzle 4 are not necessarily required.
さらに上述の実施の形態では、ガス供給機構3を用いてウエハWの周縁領域11に撥レジスト化ガスを供給し、ウエハWの中央領域12に親レジスト化ガスを供給したが、これら撥レジスト化ガス及び親レジスト化ガスの供給は必ずしも必要ではない。また撥レジスト化ガスのみを供給するように構成してもよいし、ガス供給機構3を塗布装置1と別ユニットに設けるようにしてもよい。
Further, in the above-described embodiment, the gas repellent gas is supplied to the peripheral region 11 of the wafer W using the gas supply mechanism 3 and the parent resist forming gas is supplied to the central region 12 of the wafer W. The supply of gas and parent resist gas is not necessarily required. Alternatively, only the resist-repellent gas may be supplied, or the gas supply mechanism 3 may be provided in a separate unit from the coating apparatus 1.
さらにまた塗布液Rを塗布したウエハWの回転は塗布装置1とは別ユニットで行うようにしてもよい。また本発明は、レジスト液や反射防止膜形成用の処理液や、現像液、ポリイミド等を基板に塗布する塗布装置にも適用でき、本発明の基板には、半導体ウエハのみならず液晶ディスプレイ用のガラス基板(LCD基板)や、太陽電池用基板等の基板も含まれる。
Furthermore, the rotation of the wafer W coated with the coating liquid R may be performed by a unit different from the coating apparatus 1. The present invention can also be applied to a coating device for applying a resist solution, a processing solution for forming an antireflection film, a developing solution, polyimide, etc. to the substrate. A glass substrate (LCD substrate) and a substrate such as a solar cell substrate are also included.
2 スピンチャック
4 塗布ノズル
41 吐出口
44 移動機構
5 塗布液タンク
7 制御部
W 半導体ウエハ 2 Spinchuck 4 Coating nozzle 41 Discharge port 44 Moving mechanism 5 Coating liquid tank 7 Control unit W Semiconductor wafer
4 塗布ノズル
41 吐出口
44 移動機構
5 塗布液タンク
7 制御部
W 半導体ウエハ 2 Spin
Claims (8)
- 基板に塗布液を供給して塗布膜を形成する方法において、
基板を基板保持部に水平に保持させる工程と、
次いで塗布ノズルの吐出口を、前記基板に対して近接させた状態で相対的に移動させながら、前記吐出口から毛細管現象により塗布液を引き出して基板に塗布する工程と、
続いて基板上の塗布液が基板から飛散しない回転数で当該基板を回転させる工程と、を含むことを特徴とする塗布方法。 In a method of forming a coating film by supplying a coating solution to a substrate,
Holding the substrate horizontally on the substrate holding part;
Next, a process of drawing the coating liquid from the discharge port by capillary action and applying it to the substrate while relatively moving the discharge port of the coating nozzle close to the substrate;
And a step of rotating the substrate at a rotation speed at which the coating liquid on the substrate does not scatter from the substrate. - 請求項1に記載の塗布方法において、
前記吐出口は、基板の被塗布面の幅と同じかそれ以上の長さに形成され、
前記基板に塗布液を塗布する工程は、前記塗布ノズルを基板に対して前記吐出口と交差する方向に相対的に移動させながら行う。 The coating method according to claim 1,
The discharge port is formed with a length equal to or greater than the width of the surface to be coated of the substrate,
The step of applying the coating liquid to the substrate is performed while moving the coating nozzle relative to the substrate in a direction intersecting the discharge port. - 請求項1に記載の塗布方法において、
前記基板を回転させる工程は、前記基板保持部を鉛直軸まわりに回転させることにより行う。 The coating method according to claim 1,
The step of rotating the substrate is performed by rotating the substrate holder around a vertical axis. - 請求項1に記載の塗布方法において、
前記塗布液を基板に塗布する前に、基板の被塗布面における周縁領域を撥塗布液化する工程を行う。 The coating method according to claim 1,
Before applying the coating liquid to the substrate, a step of making the peripheral region on the surface to be coated of the substrate repellent is performed. - 基板に塗布液を供給して塗布膜を形成する塗布装置において、
基板を水平に保持すると共に、当該基板を鉛直軸まわりに回転させる基板保持部と、
吐出口を備えると共に、この吐出口を含む塗布液の流路が毛細管状に構成された塗布ノズルと、
この塗布液ノズルの吐出口を基板保持部に保持された基板に対して近接させた状態で相対的に移動させる移動機構と、
その上面が大気開放されると共に、前記塗布ノズルと塗布液供給路により接続され、その内部の塗布液の液面の高さが塗布ノズルの吐出口の高さよりも低く設定された塗布液槽と、
前記塗布ノズルを移動機構により移動させながら、前記吐出口から毛細管現象により塗布液を引き出して基板に塗布し、次いで基板保持部により基板上の塗布液が基板から飛散しない回転数で当該基板を回転させるように、これら移動機構と基板保持部と、を制御する制御部と、を備えることを特徴とする塗布装置。 In a coating apparatus that forms a coating film by supplying a coating solution to a substrate,
A substrate holding unit that holds the substrate horizontally and rotates the substrate around a vertical axis;
An application nozzle having a discharge port and a flow path of the application liquid including the discharge port configured in a capillary shape;
A moving mechanism for relatively moving the discharge port of the coating liquid nozzle in a state of being close to the substrate held by the substrate holding unit;
An upper surface of the coating liquid is opened to the atmosphere, and is connected to the coating nozzle by a coating liquid supply path, and a coating liquid tank in which the height of the coating liquid inside is set lower than the height of the discharge port of the coating nozzle; ,
While moving the coating nozzle by a moving mechanism, the coating liquid is drawn from the discharge port by capillary action and applied to the substrate, and then the substrate holding part rotates the substrate at a rotation speed at which the coating liquid on the substrate does not scatter from the substrate. And a controller that controls the moving mechanism and the substrate holding unit. - 請求項5に記載の塗布装置において、
前記吐出口は、基板の被塗布面の幅と同じかそれ以上の長さに形成され、前記移動機構は、前記塗布ノズルと基板保持部に保持された基板とを、当該吐出口と交差する方向に相対的に移動させる。 The coating apparatus according to claim 5, wherein
The discharge port is formed to have a length equal to or longer than the width of the coated surface of the substrate, and the moving mechanism intersects the discharge nozzle and the substrate held by the substrate holding unit. Move relative to the direction. - 請求項5に記載の塗布装置において、
前記基板保持部は移動機構を兼ねるものであり、基板の被塗布面の幅と同じかそれ以上の長さに形成された前記吐出口を基板保持部に保持された基板と対向させて、基板を回転させることにより、塗布液を基板に塗布する。 The coating apparatus according to claim 5, wherein
The substrate holding part also serves as a moving mechanism, and the discharge port formed to have a length equal to or longer than the width of the coated surface of the substrate is opposed to the substrate held by the substrate holding part. Is rotated to apply the coating liquid to the substrate. - 請求項5に記載の塗布装置において、
基板の被塗布面における周縁領域を撥塗布液化する撥塗布液化機構を備える。 The coating apparatus according to claim 5, wherein
A coating liquid repellency mechanism is provided for converting the peripheral area of the coated surface of the substrate into a coating liquid.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107731661A (en) * | 2017-11-14 | 2018-02-23 | 山东芯诺电子科技股份有限公司 | A kind of glassivation chip glass cement painting method and device |
CN110888302A (en) * | 2018-09-11 | 2020-03-17 | 长鑫存储技术有限公司 | Scanning type photoresist coating system and method |
CN115350877A (en) * | 2022-09-19 | 2022-11-18 | 无锡极电光能科技有限公司 | Coating machine and method for coating substrate by using same |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5789569B2 (en) | 2012-06-27 | 2015-10-07 | 東京エレクトロン株式会社 | Coating device and nozzle |
JP2014124646A (en) * | 2012-12-25 | 2014-07-07 | Disco Abrasive Syst Ltd | Laser machining method and fine particle layer former |
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JP6272138B2 (en) * | 2014-05-22 | 2018-01-31 | 東京エレクトロン株式会社 | Application processing equipment |
JP6231956B2 (en) | 2014-08-11 | 2017-11-15 | 東京エレクトロン株式会社 | Substrate processing equipment |
KR102334771B1 (en) * | 2020-04-07 | 2021-12-03 | (주) 대한케미스타 | Jig for Painting |
CN114260139B (en) * | 2021-12-13 | 2022-12-02 | 扬州思普尔科技有限公司 | Semiconductor wafer processing is with even mucilage binding of high efficiency device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0824740A (en) * | 1994-07-15 | 1996-01-30 | Dainippon Screen Mfg Co Ltd | Device for applying coating solution on substrate |
JP2007130516A (en) * | 2005-11-08 | 2007-05-31 | Toppan Printing Co Ltd | Slit and spin coater, manufacturing method of color filter, and the color filter |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100281990B1 (en) * | 1993-12-30 | 2001-02-15 | 박영구 | Manufacturing method and apparatus for color filter |
JP2001176781A (en) | 1999-12-17 | 2001-06-29 | Tokyo Electron Ltd | Device for forming film |
KR101025103B1 (en) * | 2004-03-30 | 2011-03-25 | 엘지디스플레이 주식회사 | Apparatus for coating photoresist comprising slitnozzle |
KR100780718B1 (en) * | 2004-12-28 | 2007-12-26 | 엘지.필립스 엘시디 주식회사 | Slit coater having apparatus of supplying coating fluid |
-
2010
- 2010-02-17 JP JP2010032177A patent/JP5454203B2/en active Active
-
2011
- 2011-01-20 TW TW100102115A patent/TWI495514B/en not_active IP Right Cessation
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0824740A (en) * | 1994-07-15 | 1996-01-30 | Dainippon Screen Mfg Co Ltd | Device for applying coating solution on substrate |
JP2007130516A (en) * | 2005-11-08 | 2007-05-31 | Toppan Printing Co Ltd | Slit and spin coater, manufacturing method of color filter, and the color filter |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107731661A (en) * | 2017-11-14 | 2018-02-23 | 山东芯诺电子科技股份有限公司 | A kind of glassivation chip glass cement painting method and device |
CN110888302A (en) * | 2018-09-11 | 2020-03-17 | 长鑫存储技术有限公司 | Scanning type photoresist coating system and method |
CN115350877A (en) * | 2022-09-19 | 2022-11-18 | 无锡极电光能科技有限公司 | Coating machine and method for coating substrate by using same |
CN115350877B (en) * | 2022-09-19 | 2024-07-19 | 无锡极电光能科技有限公司 | Coating machine and method for coating substrate by using same |
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