WO2011095968A3 - Fabrication of contacts for semiconductor substrates - Google Patents

Fabrication of contacts for semiconductor substrates Download PDF

Info

Publication number
WO2011095968A3
WO2011095968A3 PCT/IL2011/000112 IL2011000112W WO2011095968A3 WO 2011095968 A3 WO2011095968 A3 WO 2011095968A3 IL 2011000112 W IL2011000112 W IL 2011000112W WO 2011095968 A3 WO2011095968 A3 WO 2011095968A3
Authority
WO
WIPO (PCT)
Prior art keywords
conducting material
line
substrate
depositing
subjected
Prior art date
Application number
PCT/IL2011/000112
Other languages
French (fr)
Other versions
WO2011095968A2 (en
Inventor
Ran Asher Peleg
Michael Dovrat
Eliahu M Kritchman
Original Assignee
Xjet Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xjet Ltd. filed Critical Xjet Ltd.
Publication of WO2011095968A2 publication Critical patent/WO2011095968A2/en
Publication of WO2011095968A3 publication Critical patent/WO2011095968A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

A method for fabricating electric contacts for a semiconductor substrate includes depositing a first line of a first conducting material on the semiconductor substrate and depositing a second line of a second conducting material on the substrate, so as to cross the first line. The first conducting material and the second conducting material may differ from one another in that the first conducting material and the second conducting material penetrate into the substrate to different depths when subjected to a heat treatment. Furthermore, materials may differ from one another in that an electrical connection formed between the substrate and the first conducting material when subjected to the heat treatment differs in its contact resistivity from an electrical connection formed between the substrate and the second conducting material when subjected to the heat treatment. Alternatively, the method may include depositing a first line of a conducting material on the substrate, the first line including a zone of reduced thickness, and depositing a second line of a conducting material on the substrate, so as to cross the first line at the zone of the reduced thickness.
PCT/IL2011/000112 2010-02-03 2011-01-31 Fabrication of contacts for semiconductor substrates WO2011095968A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30101010P 2010-02-03 2010-02-03
US61/301,010 2010-02-03

Publications (2)

Publication Number Publication Date
WO2011095968A2 WO2011095968A2 (en) 2011-08-11
WO2011095968A3 true WO2011095968A3 (en) 2012-10-11

Family

ID=44355886

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2011/000112 WO2011095968A2 (en) 2010-02-03 2011-01-31 Fabrication of contacts for semiconductor substrates

Country Status (2)

Country Link
TW (1) TW201140855A (en)
WO (1) WO2011095968A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156881A (en) * 1985-12-28 1987-07-11 Sharp Corp Solar battery device
US5151377A (en) * 1991-03-07 1992-09-29 Mobil Solar Energy Corporation Method for forming contacts
WO1992022928A1 (en) * 1991-06-11 1992-12-23 Mobil Solar Energy Corporation Improved solar cell and method of making same
USRE37512E1 (en) * 1995-02-21 2002-01-15 Interuniversitair Microelektronica Centrum (Imec) Vzw Method of preparing solar cell front contacts

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62156881A (en) * 1985-12-28 1987-07-11 Sharp Corp Solar battery device
US5151377A (en) * 1991-03-07 1992-09-29 Mobil Solar Energy Corporation Method for forming contacts
WO1992022928A1 (en) * 1991-06-11 1992-12-23 Mobil Solar Energy Corporation Improved solar cell and method of making same
USRE37512E1 (en) * 1995-02-21 2002-01-15 Interuniversitair Microelektronica Centrum (Imec) Vzw Method of preparing solar cell front contacts

Also Published As

Publication number Publication date
TW201140855A (en) 2011-11-16
WO2011095968A2 (en) 2011-08-11

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