WO2011091587A1 - Solar cell apparatus having light-modulating function - Google Patents

Solar cell apparatus having light-modulating function Download PDF

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Publication number
WO2011091587A1
WO2011091587A1 PCT/CN2010/070378 CN2010070378W WO2011091587A1 WO 2011091587 A1 WO2011091587 A1 WO 2011091587A1 CN 2010070378 W CN2010070378 W CN 2010070378W WO 2011091587 A1 WO2011091587 A1 WO 2011091587A1
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WO
WIPO (PCT)
Prior art keywords
layer
solar cell
photovoltaic element
superparamagnetic
superparamagnetic layer
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PCT/CN2010/070378
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French (fr)
Chinese (zh)
Inventor
徐镇
陶霖
Original Assignee
Xu Zhen
Tao Lin
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Priority to PCT/CN2010/070378 priority Critical patent/WO2011091587A1/en
Publication of WO2011091587A1 publication Critical patent/WO2011091587A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a solar cell device, and in particular, to a solar cell device having a light-modulating function.
  • Solar cells that convert light energy into electrical energy have been widely used in power generation systems and electronic products.
  • the principle of a solar cell is that a photon enters the ruthenium substrate and is absorbed by the ruthenium substrate to transfer the energy of the photon to an electron that is originally in a bonded state (covalent bond), and thereby The electrons that were originally in the bonded state are released into free electrons.
  • Such movable electrons, as well as the holes left in the covalent bond (the holes are also movable) can cause current to flow from the solar cell.
  • the above-mentioned electrons and holes cannot be recombined, but instead are separated from the electric field at the p_n junction in the crucible substrate.
  • a ruthenium-based solar cell Since a ruthenium-based solar cell has a material property of a specific band gap, a photon whose energy is equal to or higher than the energy gap of the ruthenium-based solar cell material can be absorbed and converted into electric energy.
  • the germanium-based solar cell mainly absorbs energy in a specific wavelength band of sunlight and converts it into electric energy.
  • Even emerging solar cell materials have been developed, for example, dye-sensitized solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, compound solar cells, etc., and various solar cell materials also have a specific absorption wavelength in sunlight. The characteristics of the energy of the frequency band.
  • the sun in a stacked structure The battery field has the development of pin junctions, nip junctions, tandem junctions, and mul t i-junct ions.
  • the solar cell of the above stacked structure is extremely difficult to manufacture, and the problem of excessive manufacturing cost is derived.
  • the solar cells of the above stacked structure still suffer from the impact of unused sunlight being converted into heat. Heat for all types of solar cells will reduce the conversion efficiency of solar cells. In addition, heat and unused ultraviolet light will gradually degrade its own materials for some solar cells.
  • a solar cell device having a light modulation function comprises a photovoltaic element and a super-paramagnetic layer.
  • the photovoltaic element comprises a p_n junction.
  • the p_n junction is used to convert energy in the first wavelength band of sunlight into an electrical energy.
  • the superparamagnetic layer is formed such that sunlight passes through the superparamagnetic layer and is directed toward the p-n junction. In particular, when sunlight passes through the superparamagnetic layer, energy in a second wavelength band of sunlight is modulated by the superparamagnetic layer into energy in the first wavelength band, and is converted into the pn junction into Electrical energy.
  • the superparamagnetic layer is formed of a paramagnetic material, for example, MnZn ferrite, ⁇ ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous Materials, cobalt-based amorphous materials, ultrafine-crystalline alloys, iron powder core materials, superconducting materials, ZnO, A1203, GaN, Ga lnN,
  • a paramagnetic material for example, MnZn ferrite, ⁇ ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous Materials, cobalt-based amorphous materials, ultrafine-crystalline alloys, iron powder core materials, superconducting materials, ZnO, A1203, GaN, Ga lnN,
  • the superparamagnetic layer has a pattern of a plurality of nano-scale holes or a plurality of nano-scale protrusions. Case.
  • the photovoltaic element comprises an ant i-ref lect ion layer.
  • the superparamagnetic layer is formed on the anti-reflective layer or between the anti-reflective layer and the p-n junction.
  • the solar cell device according to the present invention further comprises a focusing lens.
  • the focusing lens is disposed over the photovoltaic element.
  • the focusing lens is used to focus sunlight onto the photovoltaic element.
  • the superparamagnetic layer is formed on a smooth surface of the focusing lens
  • the solar cell device according to the present invention further comprises a transparent substrate.
  • the superparamagnetic layer is coated on the transparent substrate.
  • the transparent substrate coated with the superparamagnetic layer is attached to or disposed on the photovoltaic element.
  • a solar cell device further comprises a focusing lens and a transparent substrate.
  • the focusing lens is disposed over the photovoltaic element to focus sunlight onto the photovoltaic element.
  • the superparamagnetic layer is coated on the transparent substrate.
  • the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of one of the focusing lenses.
  • FIG. 1 is a cross-sectional view of a solar cell device in accordance with a preferred embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
  • the photovoltaic element further comprises an anti-reflection layer.
  • FIG. 3 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention.
  • the solar cell device further includes a focusing lens.
  • FIG. 4 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention.
  • the superparamagnetic layer is coated on the transparent substrate.
  • FIG. 5 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
  • the transparent substrate coated with the superparamagnetic layer is disposed on the photovoltaic element.
  • FIG. 6 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
  • the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of the focusing lens.
  • Figure 7 is a schematic view of the surface structure of a scanning electron microscope of a nanoporous anodized aluminum layer as a template for forming a superparamagnetic layer in an embodiment of the present invention.
  • Fig. 7 is a surface structure diagram of a scanning electron microscope of a MnZnFeO ferrite layer deposited on a nanoporous anodized aluminum layer.
  • Fig. 7C is a measurement result obtained by measuring the magnetic properties of the MnZnFeO ferrite layer by a superconducting quantum interference element.
  • Figure 7D shows the AAO/GaN/Sapphi re multilayer structure test piece and two kinds of MnZnFe.
  • Figure 8 shows the reflectance spectra of three different pore size MnZnFe ferr i te/AAO/Sapphi re multilayer structures after UV irradiation.
  • FIG. 1 there is shown a cross-sectional view of a solar cell device 1 in accordance with a preferred embodiment of the present invention.
  • the solar cell device 1 has a light modulation function.
  • the solar cell device 1 includes a photovoltaic element 1 Q and a superparamagnetic layer 12.
  • the photovoltaic element 10 includes a pn junction 102.
  • the pn junction is used to convert energy in a first wavelength band of sunlight into a power.
  • the photovoltaic element 10 can be various solar cells, for example, single crystal germanium solar cells, polycrystalline germanium solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, dye-sensitized solar cells, compound solar cells, copper. Indium antimonide gallium (CIGS) solar cells, etc.
  • CIGS Indium antimonide gallium
  • the superparamagnetic layer 12 is formed such that sunlight passes through the superparamagnetic layer 12 and is directed toward the p-n junction 102.
  • energy in a second wavelength band of the sunlight is modulated by the superparamagnetic layer 12 into energy in the first wavelength band, and the pn junction is further 102 is converted into electrical energy.
  • the photovoltaic element 10 also includes an anti-reflective layer 104.
  • the superparamagnetic layer 12 is formed on the anti-reflection layer 104.
  • the photovoltaic element 10 also includes an anti-reflective layer 104.
  • the superparamagnetic layer 12 is formed between the anti-reflective layer 104 and the p-n junction 102.
  • the component symbols in Fig. 2 are the same as those in Fig. 1, that is, the structures which have been described in detail above, and their functions are also the same, and will not be described here.
  • the solar cell device 1 further includes a focus lens 14.
  • the focusing lens 14 is disposed above the photovoltaic element 10 for focusing sunlight onto the photovoltaic element 10.
  • the superparamagnetic layer 12 is formed on a smooth surface of the focus lens 14.
  • the solar cell device 1 further includes a transparent substrate 16.
  • the superparamagnetic layer 12 is coated on the transparent substrate 16.
  • the transparent substrate 16 coated with the superparamagnetic layer 12 is attached to the photovoltaic element 10.
  • the transparent substrate 16 can be made of a polymer material or a glass material.
  • the transparent substrate 16 of the coated superparamagnetic layer 12 is disposed over the photovoltaic element 10, as shown in FIG. Figure 4 and Figure 5 symbol
  • the same components in Fig. 1 are the same as those previously described, and their functions are also the same, and will not be repeated here.
  • the solar cell device 1 further includes a focusing lens 14 and a transparent substrate 16.
  • the focusing lens 14 is disposed above the photovoltaic element 10 for focusing sunlight onto the photovoltaic element 10.
  • the superparamagnetic layer 12 is coated on the transparent substrate 16.
  • the transparent substrate 16 coated with the superparamagnetic layer 12 is attached to a smooth surface of the focusing lens 14.
  • the transparent substrate 16 can be made of a polymer material or a glass material.
  • the component symbols in Fig. 6 are the same as those in Fig. 1, that is, the respective structures which have been described in detail above, and their functions are also the same, and will not be described here.
  • the superparamagnetic layer according to the present invention is a magneto-optic effect on light of a certain wavelength band in sunlight, and directly modulates the frequency (wavelength) of light in the wavelength band.
  • the superparamagnetic layer 12 is formed of a paramagnetic material (paramagnet ic mater ia l), a column, a MnZn ferrite (a column, a MnZnFeO moon granule iron (MnZnFe er ri Te) ), NiZn ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous material, cobalt-based amorphous material, ultrafine crystal alloy, iron powder core material, superconducting material , Zn0, A1203, GaN, GalnN, GaInP, S i02, S i 3N4, A1N, BN, Zr203, Au, Ag, Cu or Fe ⁇ , etc.
  • the superparamagnetic layer 12 has a plurality of nano-sca led ho le or a plurality of nano-scale protrusions.
  • the specific range of the aperture of the above hole or the outer diameter of the protrusion only responds to light of a specific frequency. Taking ultraviolet light to red light as an example, the outer diameter of the hole or the outer diameter of the protrusion is in the range of several tens of nanometers to several hundred nanometers.
  • the aperture of the above-mentioned hole or the outer diameter of the protrusion is fine-tuned, and the frequency of the modulated light changes.
  • the aperture of the upper hole depends on the frequency of the light to be modulated and the frequency at which the modulated light is to be obtained.
  • the superparamagnetic layer 12 has superparamagnetic properties only in a specific thickness range, and the thickness range in which superparamagnetic properties are maintained depends on the paramagnetic material forming the layer, and generally a suitable thickness ranges from several nanometers to Hundreds of nanometers. The thickness of the superparamagnetic layer 12 must also be considered to be such that the amount of incident light that does not affect sunlight is preferred.
  • the present invention further discloses that the superparamagnetic state as described above can be successfully manufactured without using a micro-developing process.
  • Floor It is to be noted that the following examples are merely illustrative of the invention and are not a complete embodiment of a solar cell device.
  • a gallium nitride layer is deposited on a sapphire substrate.
  • an aluminum layer is deposited on the gallium nitride layer by an electron sputtering process, and then the aluminum layer is anodized to form a nano-porous anodic a lumina oxide. AAO) layer.
  • the surface structure of the scanning electron microscope which is one of the AAO layers in this case, is shown in Figure 7A. It is necessary to declare that the AA0 layer is used as a template and does not need to be removed.
  • a MnZnFeO ferrite iron (MnZnFe err i te) layer was formed on the AA0 layer by an in-s i tu spinning-prec ipi tated technique.
  • the MnZnFe ferr i te is prepared by modulating 0.5 M MnC12, ZnC12, Fe203, and mixing them in a ratio of 0.5:0.5:1, and stirring uniformly.
  • Another 2M NaOH liquid can be prepared as a co-precipitation reaction, and the MnZnFe ferr i te layer can be obtained by interactive titration.
  • the surface structure of a scanning electron microscope of one of the MnZnFeO ferrite layers in this case is shown in Fig. 7B.
  • the MnZnFeO ferrite layer has nanometer-scale pores.
  • the magnetic properties of the MnZnFeO ferrite layer were measured by a superconducting quantum interference element (SQUID).
  • the measurement results are shown in Fig. 7C.
  • the measurement results shown in Fig. 7C have an increase in magnetic susceptibility, a small residual magnetic flux, and a very low coercive force, which proves that the MnZnFeO ferrite layer exhibits superparamagnetism.
  • test pieces were prepared according to the above processes, respectively: AAO/GaN/Sapphi re multilayer structure, 45MnZnFe er rite (precipitation time: 45 seconds) /AAO/GaN/Sapph ire multilayer structure and 9 ⁇ nZnFe Ferr i te (precipitation time: 90 seconds) / AAO / GaN / Sapphi re multi-layer structure.
  • a He-Cd laser of 325 was used as the excitation light source, and the energy was 3.13 eV, and the above three test pieces were excited.
  • the excited fluorescent light is collected by the lens group, and then focused into the optical language instrument, which is detected by the photomultiplier tube detector (PMT) after being separated by the grating in the spectrometer, and then the spectrum is drawn through the computer, and the result is drawn.
  • PMT photomultiplier tube detector
  • the blue peak intensity is attenuated as the MnZnFe err i te centrifugal precipitation time increases, and a secondary peak having a wavelength of about 550 nm is produced. Since the AA0 structural layer was measured by SQUID, it was confirmed to be superparamagnetic.
  • the fluorescence of the AAO/GaN/Sapphi re multilayer structure test piece was attenuated.
  • the results presented by Fig. 7D confirm that the red shift peak (secondary peak) is mainly due to the superparamagnetism of the MnZnFeO err i te layer caused by the original emission light modulation.
  • the optical properties of the modulated light for example, the wavelength of the peak, the bandwidth, etc., these optical properties can be controlled by the process to control the geometrical parameters of the nanostructure (hole or protrusion) on the MnZnFeO ferr i te layer, for example , aperture (outer diameter), arrangement, etc., to achieve the optical properties of the desired modulated light.
  • test pieces were prepared according to the above various processes, respectively: MnZnFe numbered D1
  • the above three kinds of test pieces differ in the pore size of the nanostructure on the superparamagnetic layer, which is D1 (about ten nanometers) ⁇ D2 (about several tens of nanometers) ⁇ D3 (about hundreds of nanometers).
  • the surface of the above three test pieces was irradiated with an ultraviolet laser, and the spectrum of the reflected light was measured. The results are shown in Fig. 8.
  • the MnZnFe ferr i te/AAO/Sapphi re multilayer structure As shown in Fig. 8, in the reflected light spectrum, the three test pieces of Dl, D2 and D3 all obviously caused a red shift to the ultraviolet light.
  • the D1 test piece with the smallest aperture of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 410 nm.
  • the D2 test piece with the second largest aperture of the nanostructure on the superparamagnetic layer has a peak of reflected light at a wavelength of about 425 nm.
  • the D3 test piece with the largest pore diameter of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 450 nm.
  • the results in Figure 8 are again confirmed to be controllable through the process.
  • the geometrical parameters of the nanostructures (holes or protrusions) on the superparamagnetic layer, such as the aperture (outer diameter), alignment, etc., can achieve the optical properties of the desired modulated light.
  • a solar cell device uses a superparamagnetic layer to modulate light energy in a wavelength band that is not utilized in sunlight to a wavelength band that can be converted into electrical energy by a photovoltaic element.
  • the conversion performance of the solar cell device is improved, and the heat converted by the unutilized light energy is also slowed down to cause adverse effects on the solar cell device.

Abstract

A solar cell apparatus (1) having light-modulating function is provided. The solar cell apparatus (1) includes a photovoltaic element (10) and a super-paramagnetic layer (12). The photovoltaic element (10) includes a p-n junction (102). The p-n junction (102) is used for converting energy of the first wavelength band in the sunlight into electric energy. The super-paramagnetic layer (12) is formed so that the sunlight firstly transmits through the super-paramagnetic layer, then irradiates to the p-n junction (102). Especially, when the sunlight transmits through the super-paramagnetic layer (12), energy of the second wavelength band in the sunlight is modulated to the energy of the first wavelength frequency by the super-paramagnetic layer (12).

Description

具有光调制功能的太阳能电池裝置  Solar cell device with light modulation function
【技术领域】 [Technical Field]
本发明关于一种太阳能电池装置（solar cel l appara tus) , 并且特别地， 本发明是关于一种具有光调制功能（l ight-modulat ing funct ion)的太阳能电池 装置。  The present invention relates to a solar cell device, and in particular, to a solar cell device having a light-modulating function.
【背景技术】 【Background technique】
将光能转换成电能的太阳能电池已广泛被运用在发电***以及电子产品 上。 以典型的矽基太阳能电池为例， 太阳能电池的原理是光子进入矽基材并且 由该矽基材吸收， 以转移光子的能量给原为键结状态（共价键）的电子， 并且借 此释放原为键结状态的电子成游离的电子。 此种可移动的电子， 以及其所遗留 下原在共价键处的电洞（此种电洞也是可移动的）， 可以造成电流从该太阳能电 池流出。 为了贡献该电流， 上述的电子以及电洞不可以重新结合， 反而是由与 矽基材内 ρ-η接面（p_n junct ion)处之电场所分离。  Solar cells that convert light energy into electrical energy have been widely used in power generation systems and electronic products. Taking a typical bismuth-based solar cell as an example, the principle of a solar cell is that a photon enters the ruthenium substrate and is absorbed by the ruthenium substrate to transfer the energy of the photon to an electron that is originally in a bonded state (covalent bond), and thereby The electrons that were originally in the bonded state are released into free electrons. Such movable electrons, as well as the holes left in the covalent bond (the holes are also movable), can cause current to flow from the solar cell. In order to contribute to this current, the above-mentioned electrons and holes cannot be recombined, but instead are separated from the electric field at the p_n junction in the crucible substrate.
由于矽基太阳能电池具有特定能隙（band gap)的材料特性， 理论上能量等 于或高于矽基太阳能电池材料的能隙的光子皆能被吸收转换成电能。 但是， 实 务上因种种复杂的因素， 矽基太阳能电池对于太阳光的吸收光谱皆有出现峰值 的现象。 也就是说， 矽基太阳能电池主要吸收太阳光中特定波长频段的能量， 将其转换成电能。 即便新兴的太阳能电池材料陆续被开发， 例如， 染料敏化太 阳能电池、 非晶矽与微晶矽薄膜太阳能电池、 化合物太阳能电池， 等， 各种太 阳能电池材料也都具有主要吸收太阳光中特定波长频段之能量的特性。  Since a ruthenium-based solar cell has a material property of a specific band gap, a photon whose energy is equal to or higher than the energy gap of the ruthenium-based solar cell material can be absorbed and converted into electric energy. However, in practice, due to various complicated factors, the absorption spectrum of sunlight by solar-based solar cells has peaked. That is to say, the germanium-based solar cell mainly absorbs energy in a specific wavelength band of sunlight and converts it into electric energy. Even emerging solar cell materials have been developed, for example, dye-sensitized solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, compound solar cells, etc., and various solar cell materials also have a specific absorption wavelength in sunlight. The characteristics of the energy of the frequency band.
为了扩大太阳能电池对太阳光所能利用的波长频段， 在堆叠式结构的太阳 能电池领域遂有 pin接面、 nip接面、 双接面 (tandem junct ion)以及多重接面 (mul t i-junct ion)的发展。 然而， 上述堆叠式结构的太阳能电池制造上极为困 难， 衍生出制造成本过高的问题。 上述堆叠式结构的太阳能电池仍会遭遇到未 利用的太阳光换成热的沖击。 热对于各种太阳能电池， 皆会降低太阳能电池的 转换效率。 此外， 热以及未利用到的紫外光对于一些太阳能电池， 会逐渐劣化 其本身的材料。 In order to expand the wavelength band that solar cells can use for sunlight, the sun in a stacked structure The battery field has the development of pin junctions, nip junctions, tandem junctions, and mul t i-junct ions. However, the solar cell of the above stacked structure is extremely difficult to manufacture, and the problem of excessive manufacturing cost is derived. The solar cells of the above stacked structure still suffer from the impact of unused sunlight being converted into heat. Heat for all types of solar cells will reduce the conversion efficiency of solar cells. In addition, heat and unused ultraviolet light will gradually degrade its own materials for some solar cells.
因此， 本发明之一目的即在提供一种具有光调制功能的太阳能发电装置， 以将原未利用的某一波长频段的光能调制成能被太阳能发电装置的光伏元件 (photovo l ta i c devi ce)转换成电能之波长频段的光能。  Accordingly, it is an object of the present invention to provide a solar power generation device having a light modulation function for modulating light energy of a wavelength band not originally utilized into a photovoltaic element capable of being used by a solar power generation device (photovo l ta ic devi Ce) The light energy converted into the wavelength band of electrical energy.
【发明内容】 [Summary of the Invention]
根据本发明之一较佳具体实施例之具有光调制功能的太阳能电池装置， 其 包含一光伏元件以及一超顺磁性层（super— paramagnet ic layer)。 该光伏元件 包含一 p_n接面。 该 p_n接面用以将太阳光中位于一第一波长频段的能量转换成 一电能。 该超顺磁性层形成致使太阳光先行穿过该超顺磁性层再射向该 p-n接 面。 特别地， 当太阳光通过该超顺磁性层时， 太阳光中位于一第二波长频段的 能量被该超顺磁性层调制成位于该第一波长频段的能量， 进而被该 p-n接面转换 成电能。  A solar cell device having a light modulation function according to a preferred embodiment of the present invention comprises a photovoltaic element and a super-paramagnetic layer. The photovoltaic element comprises a p_n junction. The p_n junction is used to convert energy in the first wavelength band of sunlight into an electrical energy. The superparamagnetic layer is formed such that sunlight passes through the superparamagnetic layer and is directed toward the p-n junction. In particular, when sunlight passes through the superparamagnetic layer, energy in a second wavelength band of sunlight is modulated by the superparamagnetic layer into energy in the first wavelength band, and is converted into the pn junction into Electrical energy.
于实际应用中， 该超顺磁性层由一顺磁性材料所形成， 例如， MnZn铁氧体、 ΜΖη铁氧体、 NiZnCu, Ni-Fe-Mo合金、 铁基非晶材料、 铁镍基非晶材料、 钴基 非晶材料、 超微晶合金、 铁粉心材料、 超导材料、 ZnO、 A1203、 GaN、 Ga lnN, In practical applications, the superparamagnetic layer is formed of a paramagnetic material, for example, MnZn ferrite, ΜΖη ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous Materials, cobalt-based amorphous materials, ultrafine-crystalline alloys, iron powder core materials, superconducting materials, ZnO, A1203, GaN, Ga lnN,
GaInP、 S i02、 S i 3N4、 A1N、 BN、 Zr203、 Au、 Ag、 Cu或 Fe , 等。 此外， 该 超顺磁性层具有由多个奈米尺度的孔洞或多个奈米尺度的突出体所构成的一图 案。 GaInP, S i02, S i 3N4, A1N, BN, Zr203, Au, Ag, Cu or Fe, and the like. In addition, the superparamagnetic layer has a pattern of a plurality of nano-scale holes or a plurality of nano-scale protrusions. Case.
于一具体实施例中，该光伏元件包含一抗反射层（ant i-ref lect ion layer) 。 该超顺磁性层形成于该抗反射层上或形成在该抗反射层与该 p-n接面之间。  In one embodiment, the photovoltaic element comprises an ant i-ref lect ion layer. The superparamagnetic layer is formed on the anti-reflective layer or between the anti-reflective layer and the p-n junction.
于另一具体实施例中， 根据本发明之太阳能电池装置进一步包含一聚焦透 镜。 该聚焦透镜安置在该光伏元件之上。 该聚焦透镜用以将太阳光聚焦至该光 伏元件上。 该超顺磁性层形成在该聚焦透镜之一平滑表面上  In another embodiment, the solar cell device according to the present invention further comprises a focusing lens. The focusing lens is disposed over the photovoltaic element. The focusing lens is used to focus sunlight onto the photovoltaic element. The superparamagnetic layer is formed on a smooth surface of the focusing lens
于另一具体实施例中， 根据本发明之太阳能电池装置进一步包含一透明基 底。 该超顺磁性层被覆于该透明基底上。 该被覆超顺磁性层之透明基底贴附于 该光伏元件上或安置在该光伏元件之上。  In another embodiment, the solar cell device according to the present invention further comprises a transparent substrate. The superparamagnetic layer is coated on the transparent substrate. The transparent substrate coated with the superparamagnetic layer is attached to or disposed on the photovoltaic element.
于另一具体实施例中， 根据本发明之太阳能电池装置进一步包含一聚焦透 镜以及一透明基底。 该聚焦透镜安置在该光伏元件之上， 用以将太阳光聚焦至 该光伏元件上。 该超顺磁性层被覆于该透明基底上。 该被覆超顺磁性层之透明 基底贴附于该聚焦透镜之一平滑表面上。  In another embodiment, a solar cell device according to the present invention further comprises a focusing lens and a transparent substrate. The focusing lens is disposed over the photovoltaic element to focus sunlight onto the photovoltaic element. The superparamagnetic layer is coated on the transparent substrate. The transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of one of the focusing lenses.
关于本发明之优点与精神可以藉由以下的发明详述及所附图式得到进一步 的了解。  The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.
【附图说明】 [Description of the Drawings]
图 1绘示根据本发明之一较佳具体实施例之太阳能电池装置的截面视图。 1 is a cross-sectional view of a solar cell device in accordance with a preferred embodiment of the present invention.
图 2绘示根据本发明之另一较佳具体实施例之太阳能电池装置的截面视图。 于图2 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
2中， 该光伏元件并且包含一抗反射层。 In 2, the photovoltaic element further comprises an anti-reflection layer.
图 3绘示根据本发明之另一较佳具体实施例之太阳能电池装置的截面视图。 于图 3中， 该太阳能电池装置进一步包含一聚焦透镜。 3 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In FIG. 3, the solar cell device further includes a focusing lens.
图 4绘示根据本发明之另一较佳具体实施例之太阳能电池装置的截面视图。 于图 4中， 该超顺磁性层被覆于该透明基底上。 4 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture In 4, the superparamagnetic layer is coated on the transparent substrate.
图 5绘示根据本发明之另一较佳具体实施例之太阳能电池装置的截面视图。 于图5 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
5中， 该被覆超顺磁性层之透明基底安置在该光伏元件之上。 In 5, the transparent substrate coated with the superparamagnetic layer is disposed on the photovoltaic element.
图 6绘示根据本发明之另一较佳具体实施例之太阳能电池装置的截面视图。 于图6 is a cross-sectional view of a solar cell device in accordance with another preferred embodiment of the present invention. In the picture
6中， 该被覆超顺磁性层之透明基底贴附于该聚焦透镜之一平滑表面上。 In 6, the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of the focusing lens.
图 7Α是于本发明之一具体实施例中做为形成超顺磁性层之模版的奈米孔阳极氧 化铝层之一扫瞄式电子显微镜表面结构图。 Figure 7 is a schematic view of the surface structure of a scanning electron microscope of a nanoporous anodized aluminum layer as a template for forming a superparamagnetic layer in an embodiment of the present invention.
图 7Β为析出在奈米孔阳极氧化铝层上之 MnZnFeO肥粒铁层之一扫瞄式电子显微 镜表面结构图。 Fig. 7 is a surface structure diagram of a scanning electron microscope of a MnZnFeO ferrite layer deposited on a nanoporous anodized aluminum layer.
图 7C为以超导量子干涉元件量测 MnZnFeO肥粒铁层的磁性所得量测结果。 Fig. 7C is a measurement result obtained by measuring the magnetic properties of the MnZnFeO ferrite layer by a superconducting quantum interference element.
图 7D为 AAO/GaN/Sapphi re多层结构试片以及两种 MnZnFe Figure 7D shows the AAO/GaN/Sapphi re multilayer structure test piece and two kinds of MnZnFe.
ferr i te/AAO/GaN/Sapphi re多层结构试片其经激发后之萤光光谱。 Fluorescence spectrum of the ferr i te/AAO/GaN/Sapphi re multilayer structure test piece after excitation.
图 8为三种不同孔径 MnZnFe ferr i te/AAO/Sapphi re多层结构试片其经紫外线雷 射照射后的反射光光谱。 Figure 8 shows the reflectance spectra of three different pore size MnZnFe ferr i te/AAO/Sapphi re multilayer structures after UV irradiation.
【具体实施方式】 【detailed description】
以下将详述本发明的较佳具体实施例， 借以充分说明本发明之特征、 精神 及优点。  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the present invention will be described in detail hereinbelow.
请参阅图 1 , 图 1绘示根据本发明之一较佳具体实施例之太阳能电池装置 1之 一截面视图。 特别地， 该太阳能电池装置 1具有光调制功能。  Referring to Figure 1, there is shown a cross-sectional view of a solar cell device 1 in accordance with a preferred embodiment of the present invention. In particular, the solar cell device 1 has a light modulation function.
如图 1所示， 该太阳能电池装置 1包含一光伏元件 1 Q以及一超顺磁性层 12。 该光伏元件 10包含一 p-n接面 102。 该 p-n接面用以转换太阳光中位于一第一波长 频段的能量成一电能。 于实际应用中， 光伏元件 1 0可以是各种太阳能电池， 例如， 单晶矽太阳能 电池、 多晶矽太阳能电池、 非晶矽与微晶矽薄膜太阳能电池、 染料敏化太阳能 电池、 化合物太阳能电池、 铜铟踊化镓（CIGS)太阳能电池， 等。 As shown in FIG. 1, the solar cell device 1 includes a photovoltaic element 1 Q and a superparamagnetic layer 12. The photovoltaic element 10 includes a pn junction 102. The pn junction is used to convert energy in a first wavelength band of sunlight into a power. In practical applications, the photovoltaic element 10 can be various solar cells, for example, single crystal germanium solar cells, polycrystalline germanium solar cells, amorphous germanium and microcrystalline germanium thin film solar cells, dye-sensitized solar cells, compound solar cells, copper. Indium antimonide gallium (CIGS) solar cells, etc.
该超顺磁性层 12形成致使太阳光先行穿过该超顺磁性层 12再射向该 p-n接 面 102。 特别地， 当太阳光通过该超顺磁性层 12时， 太阳光中位于一第二波长频 段的能量被该超顺磁性层 12调制成位于该第一波长频段的能量， 进而被该 p-n接 面 102转换成电能。  The superparamagnetic layer 12 is formed such that sunlight passes through the superparamagnetic layer 12 and is directed toward the p-n junction 102. In particular, when sunlight passes through the superparamagnetic layer 12, energy in a second wavelength band of the sunlight is modulated by the superparamagnetic layer 12 into energy in the first wavelength band, and the pn junction is further 102 is converted into electrical energy.
于一具体实施例中， 如图 1所示， 该光伏元件 10并且包含一抗反射层 1 04。 该超顺磁性层 12形成于该抗反射层 104上。  In one embodiment, as shown in FIG. 1, the photovoltaic element 10 also includes an anti-reflective layer 104. The superparamagnetic layer 12 is formed on the anti-reflection layer 104.
于另一较佳具体实施例中， 如图 2所示， 该光伏元件 10并且包含一抗反射层 104。 该超顺磁性层 12形成在该抗反射层 104与该 p-n接面 102之间。 图 2中元件符 号与图 1中元件符号相同者， 即为先前已详述的各个结构， 其作用也相同， 在此 不多做赘述。  In another preferred embodiment, as shown in FIG. 2, the photovoltaic element 10 also includes an anti-reflective layer 104. The superparamagnetic layer 12 is formed between the anti-reflective layer 104 and the p-n junction 102. The component symbols in Fig. 2 are the same as those in Fig. 1, that is, the structures which have been described in detail above, and their functions are also the same, and will not be described here.
于另一较佳具体实施例中， 如图 3所示， 根据本发明之太阳能电池装置 1进 一步包含一聚焦透镜 14。 该聚焦透镜 14安置在该光伏元件 1 0之上， 用以将太阳 光聚焦至该光伏元件 10上。 该超顺磁性层 12形成在该聚焦透镜 14的一平滑表面 上。 图 3中元件符号与图 1中元件符号相同者， 即为先前已详述的各个结构， 其 作用也相同， 在此不多做赘述。  In another preferred embodiment, as shown in FIG. 3, the solar cell device 1 according to the present invention further includes a focus lens 14. The focusing lens 14 is disposed above the photovoltaic element 10 for focusing sunlight onto the photovoltaic element 10. The superparamagnetic layer 12 is formed on a smooth surface of the focus lens 14. The component symbols in Fig. 3 are the same as those in Fig. 1, that is, the structures which have been described in detail above, and their functions are also the same, and will not be described here.
于另一较佳具体实施例中， 如图 4所示， 根据本发明之太阳能电池装置 1进 一步包含一透明基底 16。 该超顺磁性层 12被覆于该透明基底 16上。 该被覆超顺 磁性层 12之透明基底 16贴附于该光伏元件 1 0上。 实务上， 该透明基底 16可以由 一高分子材料或一玻璃材料来制成。 于另一具体实施例中， 该被覆超顺磁性层 12之透明基底 16安置在该光伏元件 10之上， 如图 5所示。 图 4及图 5中元件符号与 图 1中元件符号相同者， 即为先前已详述的各个结构， 其作用也相同， 在此不多 做赘述。 In another preferred embodiment, as shown in FIG. 4, the solar cell device 1 according to the present invention further includes a transparent substrate 16. The superparamagnetic layer 12 is coated on the transparent substrate 16. The transparent substrate 16 coated with the superparamagnetic layer 12 is attached to the photovoltaic element 10. In practice, the transparent substrate 16 can be made of a polymer material or a glass material. In another embodiment, the transparent substrate 16 of the coated superparamagnetic layer 12 is disposed over the photovoltaic element 10, as shown in FIG. Figure 4 and Figure 5 symbol The same components in Fig. 1 are the same as those previously described, and their functions are also the same, and will not be repeated here.
于另一较佳具体实施例中， 如图 6所示， 根据本发明之太阳能电池装置 1进 一步包含一聚焦透镜 14以及一透明基底 16。 该聚焦透镜 14安置在该光伏元件 10 之上， 用以将太阳光聚焦至该光伏元件 10上。 该超顺磁性层 12被覆于该透明基 底 16上。 该被覆超顺磁性层 12之透明基底 16贴附于该聚焦透镜 14的一平滑表面 上。 实务上， 该透明基底 16可以由一高分子材料或一玻璃材料来制成。 图 6中元 件符号与图 1中元件符号相同者， 即为先前已详述的各个结构， 其作用也相同， 在此不多做赘述。  In another preferred embodiment, as shown in FIG. 6, the solar cell device 1 according to the present invention further includes a focusing lens 14 and a transparent substrate 16. The focusing lens 14 is disposed above the photovoltaic element 10 for focusing sunlight onto the photovoltaic element 10. The superparamagnetic layer 12 is coated on the transparent substrate 16. The transparent substrate 16 coated with the superparamagnetic layer 12 is attached to a smooth surface of the focusing lens 14. In practice, the transparent substrate 16 can be made of a polymer material or a glass material. The component symbols in Fig. 6 are the same as those in Fig. 1, that is, the respective structures which have been described in detail above, and their functions are also the same, and will not be described here.
在此需强调的是， 根据本发明之超顺磁性层是对太阳光中某一波长频段的 光造成磁光效应， 直接调制该波长频段的光之频率（波长）。  It should be emphasized here that the superparamagnetic layer according to the present invention is a magneto-optic effect on light of a certain wavelength band in sunlight, and directly modulates the frequency (wavelength) of light in the wavelength band.
于实际应用中， 该超顺磁性层 12由一顺磁性材料（paramagnet i c mater ia l) 所形成， 列 ^口， MnZn铁氧体 (^列 ^口， MnZnFeO月巴粒铁（MnZnFe f er r i te) )、 NiZn铁 氧体、 NiZnCu, Ni-Fe-Mo合金、 铁基非晶材料、 铁镍基非晶材料、 钴基非晶材 料、超微晶合金、铁粉心材料、超导材料、 Zn0、 A1203、 GaN、 GalnN, GaInP、 S i02、 S i 3N4、 A1N、 BN、 Zr203、 Au、 Ag、 Cu或 Fe ··· ··· , 等。 此外， 该超顺磁性层 12具 有由多个奈米尺度的孔洞（nano-sca led ho le)或多个奈米尺度的突出体  In practical applications, the superparamagnetic layer 12 is formed of a paramagnetic material (paramagnet ic mater ia l), a column, a MnZn ferrite (a column, a MnZnFeO moon granule iron (MnZnFe er ri Te) ), NiZn ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel-based amorphous material, cobalt-based amorphous material, ultrafine crystal alloy, iron powder core material, superconducting material , Zn0, A1203, GaN, GalnN, GaInP, S i02, S i 3N4, A1N, BN, Zr203, Au, Ag, Cu or Fe ······, etc. In addition, the superparamagnetic layer 12 has a plurality of nano-sca led ho le or a plurality of nano-scale protrusions.
(nano-sca led protrus ion)所构成之一图案。 上述孔洞的孔径或突出体的外径 之特定范围， 仅对特定频率的光具有响应。 以从紫外光至红光为例， 上述孔洞 的孔径或突出体的外径是当范围为数十奈米至数百奈米。 在制造过程中， 微调 上述孔洞的孔径或突出体的外径， 经调制光的频率即会改变。 因此， 根据本发 明之超顺磁性层 12 , 其上孔洞的孔径（或突出体的外径）需视欲被调制光之频率 以及欲获得调制光的频率而定。 此外， 该超顺磁性层 12仅有在特定的厚度范围才具有超顺磁特性， 并且维 持超顺磁特性的厚度范围取决于形成该层的顺磁性材料， 一般适当的厚度范围 为数奈米至数百奈米。 该超顺磁性层 12的厚度也须考量到以不影响太阳光的入 射光量为佳。 (nano-sca led protrus ion) is a pattern. The specific range of the aperture of the above hole or the outer diameter of the protrusion only responds to light of a specific frequency. Taking ultraviolet light to red light as an example, the outer diameter of the hole or the outer diameter of the protrusion is in the range of several tens of nanometers to several hundred nanometers. During the manufacturing process, the aperture of the above-mentioned hole or the outer diameter of the protrusion is fine-tuned, and the frequency of the modulated light changes. Therefore, according to the superparamagnetic layer 12 of the present invention, the aperture of the upper hole (or the outer diameter of the protrusion) depends on the frequency of the light to be modulated and the frequency at which the modulated light is to be obtained. In addition, the superparamagnetic layer 12 has superparamagnetic properties only in a specific thickness range, and the thickness range in which superparamagnetic properties are maintained depends on the paramagnetic material forming the layer, and generally a suitable thickness ranges from several nanometers to Hundreds of nanometers. The thickness of the superparamagnetic layer 12 must also be considered to be such that the amount of incident light that does not affect sunlight is preferred.
关于上述超顺磁性层的制造方法， 可以藉由各种传统沉积制程， 例如， PVD、 在此， 本发明另揭露一种无需藉由微显影制程而能成功制造出如上所述的超顺 磁性层。 需先声明， 以下所举案例仅做为说明本发明可具体实施性， 并非一完 整的太阳能电池装置实施例。 首先， 在蓝宝石基材上沉积氮化镓层。 接着， 在 氮化镓层上藉由电子溅射（el ectron sput ter ing)制程沉积铝层， 再对铝层进行 阳极氧化处理，进而形成奈米孑 阳极氧化铝 (nano-porous anodic a lumina oxide AAO)层。本案例的 AAO层之一扫瞄式电子显微镜表面结构请见图 7A所示。需声明， 在此 AA0层即做为一模版， 无需移除。接着，在 AA0层上藉由旋转析出法（in-s i tu spinning-prec ipi tated technique)形成 MnZnFeO肥粒铁 (MnZnFe f err i te) 层。 MnZnFe ferr i te的制备乃是调制 0. 5M的 MnC12、 ZnC12、 Fe203 , 以 0. 5 : 0. 5 : 1之比例混合在一起后搅拌均匀。 另调配 2M的 NaOH液体作为共沉反应即可以旋转 析出法， 以交互滴定得到 MnZnFe ferr i te层。 本案例的 MnZnFeO肥粒铁层之一扫 瞄式电子显微镜表面结构请见图 7B所示。 如图 7B所示， 该 MnZnFeO肥粒铁层具有 奈米尺度的孔洞。 以超导量子干涉元件（SQUID)量测 MnZnFeO肥粒铁层的磁性， 其量测结果请见图 7C。 图 7C所示的量测结果其磁化率增加， 残磁量甚小、 矫顽 磁力甚低， 足以证明 MnZnFeO肥粒铁层呈现超顺磁的现象。  Regarding the above-described method for fabricating the superparamagnetic layer, various conventional deposition processes, for example, PVD, may be employed. Here, the present invention further discloses that the superparamagnetic state as described above can be successfully manufactured without using a micro-developing process. Floor. It is to be noted that the following examples are merely illustrative of the invention and are not a complete embodiment of a solar cell device. First, a gallium nitride layer is deposited on a sapphire substrate. Next, an aluminum layer is deposited on the gallium nitride layer by an electron sputtering process, and then the aluminum layer is anodized to form a nano-porous anodic a lumina oxide. AAO) layer. The surface structure of the scanning electron microscope, which is one of the AAO layers in this case, is shown in Figure 7A. It is necessary to declare that the AA0 layer is used as a template and does not need to be removed. Next, a MnZnFeO ferrite iron (MnZnFe err i te) layer was formed on the AA0 layer by an in-s i tu spinning-prec ipi tated technique. The MnZnFe ferr i te is prepared by modulating 0.5 M MnC12, ZnC12, Fe203, and mixing them in a ratio of 0.5:0.5:1, and stirring uniformly. Another 2M NaOH liquid can be prepared as a co-precipitation reaction, and the MnZnFe ferr i te layer can be obtained by interactive titration. The surface structure of a scanning electron microscope of one of the MnZnFeO ferrite layers in this case is shown in Fig. 7B. As shown in Fig. 7B, the MnZnFeO ferrite layer has nanometer-scale pores. The magnetic properties of the MnZnFeO ferrite layer were measured by a superconducting quantum interference element (SQUID). The measurement results are shown in Fig. 7C. The measurement results shown in Fig. 7C have an increase in magnetic susceptibility, a small residual magnetic flux, and a very low coercive force, which proves that the MnZnFeO ferrite layer exhibits superparamagnetism.
根据上述各制程制备三种试片， 分别为： AAO/GaN/Sapphi re多层结构、 45MnZnFe f er r i t e (析出时间： 45秒） /AAO/GaN/Sapph i r e多层结构以及 9幌 nZnFe ferr i te (析出时间: 90秒） /AAO/GaN/Sapphi re多层结构。 采用 325的 He_Cd 雷射 作为激发的光源， 能量为 3. 13eV, 对上述三种试片进行激发。 并且， 利用透镜 组收集激发出的萤光， 再聚焦至光语仪内， 经光谱仪内之光栅分光后由光电倍 增管侦测器（PMT)侦测， 再透过电脑将光谱绘制， 其结果请见图 7D。 如图 7D所示 的萤光光谱， 其蓝光峰值强度随着 MnZnFe f err i te离心析出时间增加而减弱， 另产生波长约为 550nm的次峰值。 由于 AA0结构层经 SQUID量测， 证实其也具有超 顺磁性， 因此激发 AAO/GaN/Sapphi re多层结构试片之萤光即出现蓝光峰值减弱 的现象。 但是， 由图 7D所呈现的结果可证实该红位移（red shi f t)峰值（次峰值） 主要是因为 MnZnFeO f err i te层的超顺磁性对原发射光调制所导致。 至于， 经调 制光的光学性质， 例如， 峰值的波长、 频宽…等， 这些光学性质皆可以透过制 程来控制 MnZnFeO ferr i te层上奈米结构（孔洞或突出体）的几何参数， 例如， 孔 径（外径）、 排列…等， 进而达到所欲调制光的光学性质。 Three test pieces were prepared according to the above processes, respectively: AAO/GaN/Sapphi re multilayer structure, 45MnZnFe er rite (precipitation time: 45 seconds) /AAO/GaN/Sapph ire multilayer structure and 9幌nZnFe Ferr i te (precipitation time: 90 seconds) / AAO / GaN / Sapphi re multi-layer structure. A He-Cd laser of 325 was used as the excitation light source, and the energy was 3.13 eV, and the above three test pieces were excited. Moreover, the excited fluorescent light is collected by the lens group, and then focused into the optical language instrument, which is detected by the photomultiplier tube detector (PMT) after being separated by the grating in the spectrometer, and then the spectrum is drawn through the computer, and the result is drawn. Please see Figure 7D. As shown in the fluorescence spectrum of Fig. 7D, the blue peak intensity is attenuated as the MnZnFe err i te centrifugal precipitation time increases, and a secondary peak having a wavelength of about 550 nm is produced. Since the AA0 structural layer was measured by SQUID, it was confirmed to be superparamagnetic. Therefore, the fluorescence of the AAO/GaN/Sapphi re multilayer structure test piece was attenuated. However, the results presented by Fig. 7D confirm that the red shift peak (secondary peak) is mainly due to the superparamagnetism of the MnZnFeO err i te layer caused by the original emission light modulation. As for the optical properties of the modulated light, for example, the wavelength of the peak, the bandwidth, etc., these optical properties can be controlled by the process to control the geometrical parameters of the nanostructure (hole or protrusion) on the MnZnFeO ferr i te layer, for example , aperture (outer diameter), arrangement, etc., to achieve the optical properties of the desired modulated light.
此外， 根据上述各制程制备三种试片， 分别为： 编号 D1的 MnZnFe  In addition, three test pieces were prepared according to the above various processes, respectively: MnZnFe numbered D1
ferr i te/AAO/Sapphi re多层结构、 编号 D2的 MnZnFe f err i te/AAO/Sapphi re多层 结构以及编号 D3的 MnZnFe ferr i te/AAO/Sapphi re多层结构。 上述三种试片不同 处在于其超顺磁性层上奈米结构的孔径， 依序为 D1 (约十几奈米） < D2 (约数十 奈米） < D3 (约上百奈米）。 利用紫外光雷射照射上述三种试片的表面， 并且量 测其反射光光谱， 其结果请见图 8。 MnZnFe ferr i te/AAO/Sapphi re多层结构。 如图 8所示， 反射光光谱中， Dl、 D2及 D3三试片皆明显地对紫外光造成红位移。 超顺磁性层上奈米结构之孔径最小的 D1试片， 其反射光光谱之峰值出现在波长 约为 410nm。 超顺磁性层上奈米结构之孔径次大的 D2试片， 其反射光光语之峰值 出现在波长约为 425nm。 超顺磁性层上奈米结构之孔径最大的 D3试片， 其反射光 光谱之峰值出现在波长约为 450nm。 图 8的结果再次证实皆可以透过制程来控制 超顺磁性层上奈米结构（孔洞或突出体）的几何参数， 例如， 孔径（外径）、排列… 等， 可以达到所欲调制光的光学性质。 Ferr i te / AAO / Sapphi re multilayer structure, number D2 MnZnFe f err i te / AAO / Sapphi re multilayer structure and number D3 MnZnFe ferr i te / AAO / Sapphi re multilayer structure. The above three kinds of test pieces differ in the pore size of the nanostructure on the superparamagnetic layer, which is D1 (about ten nanometers) < D2 (about several tens of nanometers) < D3 (about hundreds of nanometers). The surface of the above three test pieces was irradiated with an ultraviolet laser, and the spectrum of the reflected light was measured. The results are shown in Fig. 8. MnZnFe ferr i te/AAO/Sapphi re multilayer structure. As shown in Fig. 8, in the reflected light spectrum, the three test pieces of Dl, D2 and D3 all obviously caused a red shift to the ultraviolet light. The D1 test piece with the smallest aperture of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 410 nm. The D2 test piece with the second largest aperture of the nanostructure on the superparamagnetic layer has a peak of reflected light at a wavelength of about 425 nm. The D3 test piece with the largest pore diameter of the nanostructure on the superparamagnetic layer has a peak of the reflected light spectrum at a wavelength of about 450 nm. The results in Figure 8 are again confirmed to be controllable through the process. The geometrical parameters of the nanostructures (holes or protrusions) on the superparamagnetic layer, such as the aperture (outer diameter), alignment, etc., can achieve the optical properties of the desired modulated light.
相较于现有技术， 根据本发明之太阳能电池装置其应用超顺磁性层对太阳 光中原未利用之一波长频段的光能调制成能被光伏元件转换成电能之波长频段 的光能。 借此， 提升太阳能电池装置的转换效能， 也减緩由未运用到之光能所 转换的热对太阳能电池装置造成不良的效应。  In contrast to the prior art, a solar cell device according to the present invention uses a superparamagnetic layer to modulate light energy in a wavelength band that is not utilized in sunlight to a wavelength band that can be converted into electrical energy by a photovoltaic element. Thereby, the conversion performance of the solar cell device is improved, and the heat converted by the unutilized light energy is also slowed down to cause adverse effects on the solar cell device.
藉由以上较佳具体实施例之详述， 希望能更加清楚描述本发明之特征与精 神， 而并非以上述所揭露的较佳具体实施例来对本发明之范畴加以限制。 相反 地， 其目的是希望能涵盖各种改变及具相等性的安排于本发明所欲申请之专利 范围的范畴内。 因此， 本发明所申请之专利范围的范畴应该根据上述的说明作 最宽广的解释， 以致使其涵盖所有可能的改变以及具相等性的安排。  The features and spirits of the present invention are more apparent from the detailed description of the preferred embodiments of the invention. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the

Claims

权利要求书 Claim
1、 一种具有光调制功能的太阳能电池装置， 其特征在于， 包含： A solar cell device having a light modulation function, comprising:
一光伏元件， 该光伏元件包含一 p-n接面， 该 p-n接面用以将太阳光中位于一 第一波长频段的能量转换成一电能； 以及 a photovoltaic element, the photovoltaic element comprising a p-n junction for converting energy in a first wavelength band of sunlight into an electrical energy;
一超顺磁性层， 该超顺磁性层形成致使太阳光先行穿过该超顺磁性层再射向该 p-n接面， 其中当太阳光通过该超顺磁性层时， 太阳光中位于一第二波长频段的 能量被该超顺磁性层调制成位于该第一波长频段的能量。 a superparamagnetic layer, the superparamagnetic layer is formed such that sunlight passes through the superparamagnetic layer and then toward the pn junction, wherein when the sunlight passes through the superparamagnetic layer, the sunlight is located in a second The energy in the wavelength band is modulated by the superparamagnetic layer into energy in the first wavelength band.
2、 根据权利要求 1所述的太阳能电池装置， 其特征在于， 其中该超顺磁性层由 一顺磁性材料所形成。  The solar cell apparatus according to claim 1, wherein the superparamagnetic layer is formed of a paramagnetic material.
3、 根据权利要求 2所述的太阳能电池装置，其特征在于，其中该顺磁材料由 MnZn 铁氧体、 NiZn铁氧体、 NiZnCu, Ni-Fe-Mo 合金、 铁基非晶材料、 铁镍基非晶材 料、 钴基非晶材料、 超微晶合金、 铁粉心材料、 超导材料、 ZnO、 A1203、 GaN、 GalnN, GaInP、 S i02、 S i 3N4、 A1N、 BN、 Zr203、 Au、 Ag、 Cu以及 Fe所组成之 一群组中之其一。  3. The solar cell apparatus according to claim 2, wherein the paramagnetic material is made of MnZn ferrite, NiZn ferrite, NiZnCu, Ni-Fe-Mo alloy, iron-based amorphous material, iron-nickel alloy. Amorphous material, cobalt-based amorphous material, ultrafine crystal alloy, iron powder core material, superconducting material, ZnO, A1203, GaN, GalnN, GaInP, S i02, S i 3N4, A1N, BN, Zr203, Au, One of a group consisting of Ag, Cu, and Fe.
4、 根据权利要求 2所述的太阳能电池装置， 其特征在于， 其中该超顺磁性层具 有由多个奈米尺度的孔洞或多个奈米尺度的突出体所构成的一图案。  The solar cell apparatus according to claim 2, wherein the superparamagnetic layer has a pattern composed of a plurality of nano-scale holes or a plurality of nano-scale protrusions.
5、 根据权利要求 2所述的太阳能电池装置， 其特征在于， 其中该光伏元件包含 一抗反射层， 该超顺磁性层形成于该抗反射层上或形成在该抗反射层与该 p-n 接面之间。  The solar cell device according to claim 2, wherein the photovoltaic element comprises an anti-reflection layer formed on the anti-reflection layer or formed on the anti-reflection layer and the pn junction Between the faces.
6、 根据权利要求 2所述的太阳能电池装置， 其特征在于， 进一步包含： 一聚焦透镜， 该聚焦透镜安置在该光伏元件之上， 该聚焦透镜用以将太阳光聚 焦至该光伏元件上， 其中该超顺磁性层形成在该聚焦透镜的一平滑表面上。 6. The solar cell apparatus according to claim 2, further comprising: a focusing lens disposed on the photovoltaic element, the focusing lens for focusing sunlight onto the photovoltaic element, Wherein the superparamagnetic layer is formed on a smooth surface of the focusing lens.
7、 根据权利要求 2所述的太阳能电池装置， 其特征在于， 进一步包含： 一透明基底， 该超顺磁性层被覆于该透明基底上， 该被覆超顺磁性层之透明基 底贴附于该光伏元件上或安置在该光伏元件之上。 The solar cell device according to claim 2, further comprising: a transparent substrate, the superparamagnetic layer is coated on the transparent substrate, and the transparent substrate coated with the superparamagnetic layer is attached to the photovoltaic The component is placed on or above the photovoltaic element.
8、 根据权利要求 2所述的太阳能电池装置， 其特征在于， 进一步包含： 一聚焦透镜， 该聚焦透镜安置在该光伏元件之上， 该聚焦透镜用以将太阳光聚 焦至该光伏元件上； 以及  The solar cell apparatus according to claim 2, further comprising: a focusing lens disposed on the photovoltaic element, the focusing lens for focusing sunlight onto the photovoltaic element; as well as
一透明基底， 该超顺磁性层被覆于该透明基底上， 该被覆超顺磁性层之透明基 底贴附于该聚焦透镜的一平滑表面上。 A transparent substrate, the superparamagnetic layer is coated on the transparent substrate, and the transparent substrate coated with the superparamagnetic layer is attached to a smooth surface of the focusing lens.
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