WO2011061694A3 - Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof - Google Patents

Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof Download PDF

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Publication number
WO2011061694A3
WO2011061694A3 PCT/IB2010/055221 IB2010055221W WO2011061694A3 WO 2011061694 A3 WO2011061694 A3 WO 2011061694A3 IB 2010055221 W IB2010055221 W IB 2010055221W WO 2011061694 A3 WO2011061694 A3 WO 2011061694A3
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic cells
layer
manufacturing
produced
cells produced
Prior art date
Application number
PCT/IB2010/055221
Other languages
French (fr)
Other versions
WO2011061694A2 (en
Inventor
Marat Zaks
Galina Kolomoets
Andrey Sitnikov
Oleg Solodukha
Lev Kreinin
Naftali P. Eisenberg
Ninel Bordin
Original Assignee
Solar Wind Technologies, Inc.
B-Solar Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/591,390 external-priority patent/US8586862B2/en
Priority claimed from US12/591,391 external-priority patent/US20110114147A1/en
Application filed by Solar Wind Technologies, Inc., B-Solar Ltd. filed Critical Solar Wind Technologies, Inc.
Priority to JP2012539462A priority Critical patent/JP2013511839A/en
Priority to CA2780913A priority patent/CA2780913A1/en
Priority to EP10793317A priority patent/EP2502277A2/en
Priority to CN2010800616051A priority patent/CN102754215A/en
Publication of WO2011061694A2 publication Critical patent/WO2011061694A2/en
Publication of WO2011061694A3 publication Critical patent/WO2011061694A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Novel methods of producing photovoltaic cells are provided herein, as well as photovoltaic cells produced thereby, and uses thereof. In some embodiments, a method as described herein comprises doping a substrate so as to form a p+ layer on one side and an n+ layer on an another side, applying an antireflective coating on the p+ layer, removing at least a portion of the n+ layer, and then forming a second n+ layer, such that a concentration of the n-dopant in the second n+ layer is variable throughout a surface of the substrate.
PCT/IB2010/055221 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof WO2011061694A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012539462A JP2013511839A (en) 2009-11-18 2010-11-17 Photovoltaic cell manufacturing method, photovoltaic cell manufactured thereby, and use thereof
CA2780913A CA2780913A1 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
EP10793317A EP2502277A2 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
CN2010800616051A CN102754215A (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/591,390 2009-11-18
US12/591,391 2009-11-18
US12/591,390 US8586862B2 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,391 US20110114147A1 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Publications (2)

Publication Number Publication Date
WO2011061694A2 WO2011061694A2 (en) 2011-05-26
WO2011061694A3 true WO2011061694A3 (en) 2012-01-19

Family

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Family Applications (2)

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PCT/IB2010/055221 WO2011061694A2 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
PCT/IB2010/055219 WO2011061693A2 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/055219 WO2011061693A2 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Country Status (5)

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EP (2) EP2502277A2 (en)
JP (2) JP2013511839A (en)
CN (2) CN102725854B (en)
CA (2) CA2781085A1 (en)
WO (2) WO2011061694A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en) 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
KR101627028B1 (en) * 2014-02-20 2016-06-03 제일모직주식회사 The method for preparing the bifacial solar cell
KR101627029B1 (en) * 2014-02-20 2016-06-03 제일모직주식회사 The method for preparing the ibc solar cell
CN104051575B (en) * 2014-06-20 2016-08-17 润峰电力有限公司 A kind of processing technology of bionical double-side photic solaode
US11075316B2 (en) 2015-10-25 2021-07-27 Solaround Ltd. Method of bifacial cell fabrication
CN107340785B (en) * 2016-12-15 2021-05-18 江苏林洋新能源科技有限公司 Double-sided photovoltaic cell module tracking method based on intelligent control and controller
CH713453A1 (en) 2017-02-13 2018-08-15 Evatec Ag Process for producing a substrate with a boron-doped surface.
US11171254B2 (en) * 2018-01-08 2021-11-09 Solaround Ltd. Bifacial photovoltaic cell and method of fabrication
CN114649427B (en) * 2021-09-14 2023-09-12 浙江晶科能源有限公司 Solar cell and photovoltaic module

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US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
WO2009010585A2 (en) * 2007-07-18 2009-01-22 Interuniversitair Microelektronica Centrum Vzw Method for producing an emitter structure and emitter structures resulting therefrom

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Also Published As

Publication number Publication date
EP2502278A2 (en) 2012-09-26
JP2013511838A (en) 2013-04-04
WO2011061693A2 (en) 2011-05-26
CA2780913A1 (en) 2011-05-26
CN102754215A (en) 2012-10-24
WO2011061693A3 (en) 2012-01-05
CN102725854B (en) 2015-11-25
CA2781085A1 (en) 2011-05-26
EP2502277A2 (en) 2012-09-26
JP6027443B2 (en) 2016-11-16
JP2013511839A (en) 2013-04-04
CN102725854A (en) 2012-10-10
WO2011061694A2 (en) 2011-05-26

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