WO2011026293A1 - Circuit de compensation de température pour amplificateur de puissance - Google Patents

Circuit de compensation de température pour amplificateur de puissance Download PDF

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Publication number
WO2011026293A1
WO2011026293A1 PCT/CN2009/075982 CN2009075982W WO2011026293A1 WO 2011026293 A1 WO2011026293 A1 WO 2011026293A1 CN 2009075982 W CN2009075982 W CN 2009075982W WO 2011026293 A1 WO2011026293 A1 WO 2011026293A1
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WO
WIPO (PCT)
Prior art keywords
power amplifier
temperature
circuit
temperature compensation
feedback loop
Prior art date
Application number
PCT/CN2009/075982
Other languages
English (en)
Chinese (zh)
Inventor
余正明
Original Assignee
惠州市正源微电子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠州市正源微电子有限公司 filed Critical 惠州市正源微电子有限公司
Publication of WO2011026293A1 publication Critical patent/WO2011026293A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/141—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a resistor and a capacitor in series, at least one of them being an active one
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/144—Indexing scheme relating to amplifiers the feedback circuit of the amplifier stage comprising a passive resistor and passive capacitor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence

Definitions

  • the present invention relates to the technical field of power amplifiers, and in particular to a power amplifier temperature compensation circuit having a stable gain effect.
  • Power amplifiers are key components in various wireless communication system transmitters. Each communication standard has strict requirements for its various indicators. As the amount of data transmission increases, the current 3G standard puts more emphasis on power amplifiers. For the demanding requirements, on the basis of high linearity and high efficiency, the power amplifier is also required to have good temperature characteristics over the entire temperature range.
  • GaAs HBT is a high-linearity and high-efficiency RF device that is widely used in linear power amplifier designs in mobile communication systems, but is currently designed with GaAs HBT devices.
  • the performance of the power amplifier has a large deviation at different temperatures, because the temperature change causes the junction voltage drop and the amplification factor of the power transistor to change, which causes the gain of the power amplifier to be greatly affected by the temperature.
  • the gain varies with temperature by 2 to 3 dB, which causes the performance of the handheld device using the power amplifier to vary greatly with temperature.
  • Temperature compensation techniques are used to compensate for this deviation of the gain of the power amplifier as a function of temperature.
  • the main focus is on designing a bias circuit with temperature compensation and using a power supply voltage control circuit with temperature compensation to achieve temperature compensation.
  • this temperature compensation method is mainly used to compensate for the loss.
  • the output power varies with temperature, and it does not have much effect on the compensation of the power amplifier gain with temperature. Therefore, current temperature compensation methods have little effect on reducing the gain of the power amplifier as a function of temperature.
  • the problem to be solved by the present invention is to provide a temperature compensation circuit capable of effectively reducing the variation of the power amplifier gain with temperature.
  • the basic technical solution adopted by the present invention is: Providing a power amplifier temperature compensation circuit for suppressing a deviation of a power amplifier gain with a temperature change, specifically including a feedback loop and a And a control circuit, the control circuit generates a control signal that varies with a temperature change of the power amplifier chip to adjust a feedback amount of the power amplifier feedback loop, and the feedback loop is connected between the input and the output of the power amplifier.
  • the feedback loop contains a diode (which can be replaced by a PN junction in a transistor of a different material), and the amount of feedback of the power amplifier is controlled by controlling the degree of conduction of the diode.
  • the feedback loop contains a field effect transistor, and the amount of feedback of the power amplifier is controlled by controlling the degree of conduction of the field effect transistor.
  • FIG. 1 is a schematic block diagram of an embodiment of a temperature compensation circuit according to the present invention
  • FIG. 2 is a circuit schematic diagram of a first preferred embodiment of the temperature compensation circuit according to the present invention
  • Circuit diagram of a preferred embodiment
  • FIG. 4 is a circuit diagram of a third preferred embodiment of the temperature compensation circuit of the present invention
  • FIG. 5 is a comparison diagram of gain versus temperature of a secondary power amplifier using the temperature compensation circuit and the temperature compensation circuit of the present invention.
  • FIG. 1 is a schematic block diagram of an embodiment of a temperature compensation circuit according to the present invention.
  • the power amplifier is connected between the input signal and the output signal
  • the control circuit is connected to the feedback loop
  • the feedback loop is connected between the input and output of the power amplifier.
  • the implementation of this embodiment is to use a control circuit to generate a control signal following the temperature change of the chip.
  • the amplification factor of the HBT device /1 ⁇ 1
  • the gain of the power amplifier decreases with the rise of the temperature T assuming that the bias current Ic does not change with temperature
  • the present invention adjusts the feedback loop of the power amplifier by the control signal.
  • the amount of feedback can effectively compensate for the change in gain with temperature, thus providing temperature compensation.
  • FIG. 5 a comparison diagram of the gain of the secondary power amplifier with temperature variation of the patented temperature compensation circuit and the temperature compensation circuit is used.
  • the vertical axis represents the gain
  • the horizontal axis represents the temperature
  • the solid line is the gain curve without temperature compensation
  • the dotted line is the gain curve with temperature compensation.
  • FIG. 2 is a circuit schematic diagram of a first preferred embodiment of the temperature compensation circuit of the present invention.
  • the reference voltage generating circuit, the voltage adjusting circuit and the control signal generating circuit are connected in series to form a control circuit, wherein the reference voltage generating circuit is configured to generate a reference voltage VBG that does not vary with temperature and power supply voltage, and a current IPTAT that follows the temperature change.
  • the voltage adjustment circuit converts the temperature-changing current IPTAT into a temperature-varying voltage VPTAT, and simultaneously converts the VBG into a more powerful reference voltage VREF, and the control signal generating circuit combines the voltages VREF and VPTAT to generate a follower chip.
  • the control signal Vtf or Itf; the resistor R1, the diode D1 and the capacitor CI are serially connected between the output end and the input end of the amplifier, and the cathode of the diode D1 is connected to the control circuit through the resistor R2, the resistor R1, the resistor R2, the diode D1 Together with capacitor C1, a feedback loop is formed in which the diode can be replaced by a PN junction of transistors of various materials; transistor Q1 is used for power amplification, and inductor L1 is a choke inductor.
  • the control circuit When the temperature changes, the control circuit generates a control signal Vtf or Itf that follows the temperature change.
  • the control signal further controls the conduction level of the diode D1 connected to the output of the control circuit, thereby changing the feedback of the feedback loop of the power amplifier at different temperatures. Amount to compensate for the gain of the power amplifier as a function of temperature.
  • FIG. 3 is a circuit schematic diagram of a second preferred embodiment of the temperature compensation circuit of the present invention.
  • the base of the transistor Q1 is connected to the input signal, the collector is connected to the inductor L1 and the output signal, and the emitter is grounded; the other end of the inductor L1 is connected to the power source VCC ; the capacitor C l , the resistor R1 and the capacitor C2 are serially connected to the transistor Q1 Between the base and the collector, the anode of the diode D1 is first connected to the junction of the resistor R1 and the capacitor C2, and then connected to the output terminal of the control circuit through the resistor R2, and the cathode is grounded.
  • Transistor Q1 is used for power amplification, and inductor L1 is a choke inductor; capacitor Cl, resistor R1, resistor R2, capacitor C2, and diode D1 form a feedback loop.
  • the control circuit When the temperature changes, the control circuit generates a control signal Vtf or Itf following the temperature change, and the control signal further controls the conduction degree of the diode D1 at different temperatures, thereby changing the feedback amount of the power amplifier feedback loop at different temperatures, It compensates for the gain of the power amplifier as a function of temperature.
  • FIG. 4 is a circuit schematic diagram of a third preferred embodiment of the temperature compensation circuit of the present invention.
  • the base of the transistor Q1 is connected to the input signal, the collector is connected to the inductor L1 and the output signal, and the emitter is grounded; the other end of the inductor L1 is connected to the power source VCC ; the capacitor C l , the resistor R1 and the capacitor C2 are serially connected to the transistor Q1 Between the base and the collector, the drain of the field effect transistor M1 is connected to the junction of the resistor R1 and the capacitor C2, the gate is connected to the output of the control circuit, and the source is grounded.
  • the transistor Q1 is used for power amplification, and the inductor L1 is a choke inductor; the capacitor C1, the resistor R1, the capacitor C2, and the field effect transistor M1 constitute a feedback loop.
  • the control circuit When the temperature changes, the control circuit generates a control voltage Vtf following the temperature change, and the control voltage further controls the conduction degree of the field effect transistor M1 at different temperatures, thereby changing the feedback amount of the power amplifier feedback loop at different temperatures, It compensates for the gain of the power amplifier as a function of temperature.
  • control circuit in the foregoing embodiment is not unique, and may be implemented in different manners. These implementation manners can be implemented by those skilled in the art according to the description in the present invention, and are not praised here.
  • the diodes in the various embodiments may be replaced by PN junctions in transistors of different materials;
  • the above temperature compensation method is also applicable to an amplifier made of different materials to suppress the change of the amplifier gain with respect to temperature.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention a trait à un circuit de compensation de température pour un amplificateur de puissance qui inclut un circuit de rétroaction (2) et un circuit de commande (1). Un signal de commande (Vtf/Itf) variant en fonction de la variation de la température de l’amplificateur de puissance est généré par le circuit de commande (1) afin de régler la rétroaction du circuit de rétroaction (2). Le circuit de rétroaction (2) est connecté entre une borne d’entrée (RFin) et une borne de sortie (RFout) de l’amplificateur de puissance. Le circuit de compensation de température peut réduire l’écart du gain de l’amplificateur de puissance lorsque la température de l’amplificateur de puissance est modifiée et conserver la performance de l’amplificateur de puissance.
PCT/CN2009/075982 2009-09-04 2009-12-24 Circuit de compensation de température pour amplificateur de puissance WO2011026293A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910192108A CN101656511A (zh) 2009-09-04 2009-09-04 射频功率放大器温度补偿电路
CN200910192108.4 2009-09-04

Publications (1)

Publication Number Publication Date
WO2011026293A1 true WO2011026293A1 (fr) 2011-03-10

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Application Number Title Priority Date Filing Date
PCT/CN2009/075982 WO2011026293A1 (fr) 2009-09-04 2009-12-24 Circuit de compensation de température pour amplificateur de puissance

Country Status (2)

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CN (1) CN101656511A (fr)
WO (1) WO2011026293A1 (fr)

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CN102075148B (zh) * 2011-01-13 2013-09-04 惠州市正源微电子有限公司 射频功率放大器的过温保护电路
CN102082569B (zh) * 2011-03-04 2013-09-04 四川和芯微电子股份有限公司 比较器线性度补偿***及方法
CN104063977B (zh) * 2013-03-20 2016-07-06 上海申达自动防范***工程有限公司 具有温度自动补偿功能的泄漏电缆探测器发射装置和***
CN104601119A (zh) * 2013-10-30 2015-05-06 西安空间无线电技术研究所 一种开环特性的温度相位跟踪补偿放大器
CN104808715B (zh) * 2015-03-11 2017-04-12 北京工业大学 一种芯片级GaAs功率器件、微波单片电路表面温度检测方法
CN104935269B (zh) * 2015-07-12 2017-11-21 北京理工大学 一种射频放大器增益的温度补偿方法和***
CN107290024A (zh) * 2016-03-31 2017-10-24 中核新能核工业工程有限责任公司 一种具有抗干扰电路的射频导纳料位计
CN107147366B (zh) * 2017-06-12 2023-08-29 广州慧智微电子股份有限公司 一种射频功率放大器的温度补偿电路
CN107404296B (zh) 2017-07-05 2020-03-06 唯捷创芯(天津)电子技术股份有限公司 基于电流检测反馈的射频功率放大器、芯片及通信终端
CN107395144B (zh) * 2017-07-05 2020-01-10 唯捷创芯(天津)电子技术股份有限公司 基于功率检测反馈的射频功率放大器、芯片及通信终端
CN107769744B (zh) * 2017-10-26 2021-01-08 成都振芯科技股份有限公司 一种温度补偿均衡器
CN107918434B (zh) * 2017-11-23 2020-09-11 广州慧智微电子有限公司 功率放大电路的偏置电流产生电路
CN108233759B (zh) * 2017-12-29 2020-03-03 北京市北分仪器技术有限责任公司 一种具有温度补偿***的质谱仪射频电源
CN108111131A (zh) * 2017-12-29 2018-06-01 广州慧智微电子有限公司 一种反馈电路及放大器
CN110311631B (zh) * 2019-05-29 2023-06-27 上海联影医疗科技股份有限公司 射频功率放大器、射频功率放大方法以及磁共振成像***
CN112187192A (zh) * 2020-10-15 2021-01-05 广东工业大学 一种射频功率放大器的自适应电路结构及射频功率放大器
CN112653403B (zh) * 2020-12-24 2023-03-14 唯捷创芯(天津)电子技术股份有限公司 降低负载变化敏感度的射频功率放大器、芯片及通信终端
CN113655840B (zh) * 2021-07-29 2023-08-29 中国电子科技集团公司第二十九研究所 温度系数可调节的放大器电路及电压产生方法
CN216390921U (zh) * 2021-10-15 2022-04-26 深圳飞骧科技股份有限公司 功率放大器
CN116317977A (zh) * 2023-01-10 2023-06-23 江苏卓胜微电子股份有限公司 新型功率放大器
CN115967359B (zh) * 2023-01-16 2024-03-01 成都仕芯半导体有限公司 射频放大器温度补偿电路及射频放大器栅极电压调整方法

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US5859568A (en) * 1997-04-11 1999-01-12 Raytheon Company Temperature compensated amplifier
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CN101145761A (zh) * 2006-09-14 2008-03-19 大唐移动通信设备有限公司 功率放大器温度补偿装置和方法
CN101447770A (zh) * 2007-11-27 2009-06-03 锐迪科微电子（上海）有限公司 射频功率放大器温度补偿电路和方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5859568A (en) * 1997-04-11 1999-01-12 Raytheon Company Temperature compensated amplifier
CN1951002A (zh) * 2004-09-14 2007-04-18 阿瓦戈科技韩国有限公司 使用二极管电压控制的功率放大器的温度补偿电路
CN101145761A (zh) * 2006-09-14 2008-03-19 大唐移动通信设备有限公司 功率放大器温度补偿装置和方法
CN101447770A (zh) * 2007-11-27 2009-06-03 锐迪科微电子（上海）有限公司 射频功率放大器温度补偿电路和方法

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Publication number Publication date
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