WO2011019222A3 - Etchant composition for forming copper interconnects - Google Patents

Etchant composition for forming copper interconnects Download PDF

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Publication number
WO2011019222A3
WO2011019222A3 PCT/KR2010/005310 KR2010005310W WO2011019222A3 WO 2011019222 A3 WO2011019222 A3 WO 2011019222A3 KR 2010005310 W KR2010005310 W KR 2010005310W WO 2011019222 A3 WO2011019222 A3 WO 2011019222A3
Authority
WO
WIPO (PCT)
Prior art keywords
etchant composition
copper interconnects
forming copper
multilayer film
metal layer
Prior art date
Application number
PCT/KR2010/005310
Other languages
French (fr)
Korean (ko)
Other versions
WO2011019222A9 (en
WO2011019222A2 (en
Inventor
양승재
임민기
권오병
이유진
유인호
박영철
신혜라
이준우
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090074828A external-priority patent/KR101805185B1/en
Priority claimed from KR1020090084866A external-priority patent/KR101805186B1/en
Priority claimed from KR1020090085436A external-priority patent/KR101745721B1/en
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to CN2010800362125A priority Critical patent/CN102471688A/en
Publication of WO2011019222A2 publication Critical patent/WO2011019222A2/en
Publication of WO2011019222A9 publication Critical patent/WO2011019222A9/en
Publication of WO2011019222A3 publication Critical patent/WO2011019222A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The present invention relates to a wet etchant composition to a multilayer film comprising a copper-based metal layer and a titanium-based metal layer. The etchant composition of the present invention provides an excellent etching profile in case of etching said multilayer film, and minimizes the damage of a glass substrate and a lower insulating layer and the generation of residue, thereby enabling the stable performance of a subsequent process.
PCT/KR2010/005310 2009-08-13 2010-08-12 Etchant composition for forming copper interconnects WO2011019222A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800362125A CN102471688A (en) 2009-08-13 2010-08-12 Etchant composition for forming copper interconnects

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR10-2009-0074828 2009-08-13
KR1020090074828A KR101805185B1 (en) 2009-08-13 2009-08-13 Etching solution composition for formation of metal line
KR1020090084866A KR101805186B1 (en) 2009-09-09 2009-09-09 Etching solution composition for formation of cu line
KR10-2009-0084866 2009-09-09
KR1020090085436A KR101745721B1 (en) 2009-09-10 2009-09-10 Etching solution composition for formation of cu line
KR10-2009-0085436 2009-09-10

Publications (3)

Publication Number Publication Date
WO2011019222A2 WO2011019222A2 (en) 2011-02-17
WO2011019222A9 WO2011019222A9 (en) 2011-05-19
WO2011019222A3 true WO2011019222A3 (en) 2011-07-07

Family

ID=43586658

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005310 WO2011019222A2 (en) 2009-08-13 2010-08-12 Etchant composition for forming copper interconnects

Country Status (2)

Country Link
CN (1) CN102471688A (en)
WO (1) WO2011019222A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102002131B1 (en) * 2012-08-03 2019-07-22 삼성디스플레이 주식회사 Etchant composition and manufacturing method for thin film transistor using the same
KR102166450B1 (en) * 2013-09-25 2020-10-16 삼성디스플레이 주식회사 Etchant and fabrication method of thin film transistor substrate using the same
CN104073804B (en) * 2014-06-17 2016-06-22 长沙牧泰莱电路技术有限公司 A kind of PCB acidic etching liquid
TWI674335B (en) * 2015-07-24 2019-10-11 南韓商東友精細化工有限公司 Etchant composition, method for manufacturing array substrate for liquid crystal display device and array substrate using the same
US10325779B2 (en) 2016-03-30 2019-06-18 Tokyo Electron Limited Colloidal silica growth inhibitor and associated method and system
US10515820B2 (en) 2016-03-30 2019-12-24 Tokyo Electron Limited Process and apparatus for processing a nitride structure without silica deposition
CN107043626A (en) * 2017-06-02 2017-08-15 广州市尤特新材料有限公司 A kind of etching paste and preparation method thereof
CN107163947A (en) * 2017-06-02 2017-09-15 合肥市惠科精密模具有限公司 A kind of copper etchant solution for liquid crystal panel manufacturing process
CN112680732A (en) * 2020-12-21 2021-04-20 江西遂川光速电子有限公司 Fine line etching liquid

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070017762A (en) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 Etchant composition, method of patterning electroconductive film using the same and method of fabricating flat panel display using the same
KR20070062259A (en) * 2005-12-12 2007-06-15 엘지.필립스 엘시디 주식회사 Etchant compound for etching electrode of liquid crystal display device
KR20080045403A (en) * 2006-11-20 2008-05-23 동우 화인켐 주식회사 Etching solution composition and method of etching using the etching solution composition
KR20080069444A (en) * 2007-01-23 2008-07-28 주식회사 동진쎄미켐 Etchant composition for patterning circuits in thin film transistor-liquid crystal devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
KR100379824B1 (en) * 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 Etchant and array substrate for electric device with Cu lines patterend on the array substrate using the etchant
WO2003036707A1 (en) * 2001-10-22 2003-05-01 Mitsubishi Gas Chemical Company, Inc. Etching method for aluminum-molybdenum laminate film
KR100505328B1 (en) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 ETCHING SOLUTIONS AND METHOD TO REMOVE MOLYBDENUM RESIDUE FOR Cu MOLYBDENUM MULTILAYERS
US7285229B2 (en) * 2003-11-07 2007-10-23 Mec Company, Ltd. Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the same
CN100428183C (en) * 2006-01-17 2008-10-22 奇奕国际股份有限公司 Automated etching control system, equipment, and method
KR101310310B1 (en) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 Etchant for thin film transistor-liquid crystal displays
CN101418449A (en) * 2007-10-22 2009-04-29 台湾巴斯夫电子材料股份有限公司 Etching liquid composition for copper/molybdenum metal and etching method
JP4916455B2 (en) * 2008-01-15 2012-04-11 株式会社Ａｄｅｋａ Etching composition for copper-containing materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070017762A (en) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 Etchant composition, method of patterning electroconductive film using the same and method of fabricating flat panel display using the same
KR20070062259A (en) * 2005-12-12 2007-06-15 엘지.필립스 엘시디 주식회사 Etchant compound for etching electrode of liquid crystal display device
KR20080045403A (en) * 2006-11-20 2008-05-23 동우 화인켐 주식회사 Etching solution composition and method of etching using the etching solution composition
KR20080069444A (en) * 2007-01-23 2008-07-28 주식회사 동진쎄미켐 Etchant composition for patterning circuits in thin film transistor-liquid crystal devices

Also Published As

Publication number Publication date
CN102471688A (en) 2012-05-23
WO2011019222A9 (en) 2011-05-19
WO2011019222A2 (en) 2011-02-17

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