WO2011013458A1 - Plasma processing apparatus, method for using plasma processing apparatus, and method for cleaning plasma processing apparatus - Google Patents

Plasma processing apparatus, method for using plasma processing apparatus, and method for cleaning plasma processing apparatus Download PDF

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Publication number
WO2011013458A1
WO2011013458A1 PCT/JP2010/060197 JP2010060197W WO2011013458A1 WO 2011013458 A1 WO2011013458 A1 WO 2011013458A1 JP 2010060197 W JP2010060197 W JP 2010060197W WO 2011013458 A1 WO2011013458 A1 WO 2011013458A1
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Prior art keywords
cleaning
plasma processing
processing apparatus
chamber
top plate
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PCT/JP2010/060197
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French (fr)
Japanese (ja)
Inventor
研二 中西
淳之 星野
正生 守口
英治 高橋
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シャープ株式会社
日新電機株式会社
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Publication of WO2011013458A1 publication Critical patent/WO2011013458A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • the present invention relates to a plasma processing apparatus, a method for using the same, and a cleaning method for the plasma processing apparatus.
  • Patent Document 1 An example of a plasma processing apparatus based on the prior art is described in, for example, Japanese Patent Application Laid-Open No. 2007-123008 (Patent Document 1).
  • Patent Document 1 discloses an apparatus having a configuration in which a U-shaped high-frequency antenna is arranged so as to penetrate the top plate of the chamber and protrude into the chamber. This apparatus generates inductively coupled plasma by applying high-frequency power to a high-frequency antenna, and processes an object with this plasma.
  • JP 2004-200292 A (Patent Document 2) describes a plasma generation apparatus.
  • This document discloses a configuration in which high-frequency antennas are arranged on the side wall of a vacuum vessel in order to make the density of plasma generated in the vacuum vessel uniform.
  • the high-frequency antennas are arranged at a certain height so as to surround a substrate table disposed at the center inside the vacuum vessel.
  • an object of the present invention is to provide a plasma processing apparatus that can make the plasma density uniform during cleaning.
  • a plasma processing apparatus includes a chamber including a side wall that surrounds the outer periphery and a top plate that closes the upper side, a stage for placing a processing object in the chamber, and the ceiling.
  • a plurality of main electrodes arranged in the center of the top plate so as to protrude downward from the plate and face the object to be processed, and a region in which the plurality of main electrodes are arranged when viewed from above
  • a cleaning electrode is disposed so as to be on the outer side, and is not supplied with electric power when plasma processing the object to be processed, and supplied with electric power when cleaning the inner surface of the chamber.
  • a method of using a plasma processing apparatus includes a step of placing a processing object in a chamber including a side wall that surrounds an outer periphery and a top plate that closes the upper side, and a reaction in the chamber. While supplying gas, power is supplied to the plurality of main electrodes arranged in the center of the top plate so as to protrude downward from the top plate and face the object to be processed, and viewed from above.
  • the step of processing the object to be processed is different from the reactive gas in the chamber by not supplying power to the cleaning electrode arranged outside the region where the plurality of main electrodes are arranged. Cleaning the inner surface of the chamber by supplying power to both the plurality of main electrodes and the cleaning electrode while supplying a type of cleaning gas.
  • the plasma can be sufficiently generated by the cleaning electrode also in the peripheral portion of the inner space of the chamber, that is, in the vicinity of the side wall. Therefore, when the inner surface of the chamber is cleaned, the entire inner space of the chamber is finely divided. The density can be made uniform and cleaning can be performed efficiently.
  • FIG. 3 is an enlarged view of a cleaning electrode in FIG. 2. It is a perspective view of the 1st example of a plurality of cleaning electrodes. It is a top view of the 1st example of a plurality of cleaning electrodes. It is a perspective view of the 2nd example of a plurality of cleaning electrodes.
  • FIG. 1 A cross-sectional view of the plasma processing apparatus 101 according to the present embodiment is shown in FIG. 1, and a schematic plan view is shown in FIG. FIG. 2 corresponds to a state in which the top is seen through the top plate from above.
  • FIG. 2 the top plate itself is not shown, but the electrodes protruding below the top plate are shown.
  • the plasma processing apparatus 101 includes a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, a stage 14 for disposing a processing target 13 in the chamber, a plurality of main electrodes 15, and a cleaning.
  • An electrode 31 is provided.
  • the plurality of main electrodes 15 protrude downward from the top plate 11.
  • the plurality of main electrodes 15 are arranged in the center of the top plate 11 so as to face the processing target 13.
  • the cleaning electrode 31 is disposed outside the region where the plurality of main electrodes 15 are arranged when viewed from above.
  • the cleaning electrode 31 is not supplied with electric power when the processing target 13 is subjected to plasma processing, and is supplied with electric power when cleaning the inner surface of the chamber.
  • FIG. 3 shows an enlarged cross-sectional view of the vicinity of the main electrode 15 in the plasma processing apparatus 101.
  • the plurality of main electrodes 15 include two main electrode vertical bar portions 15 y that penetrate the top plate 11 and lower ends of the main electrode vertical bar portions 15 y that are below the lower surface of the top plate 11.
  • One main electrode horizontal bar portion 15x to be connected is included.
  • the insulating member 21 is disposed so as to surround each main electrode vertical bar portion 15 y, so that the insulation between the top plate 11 and each main electrode 15 is achieved. It is secured.
  • the plurality of main electrodes 15 are arranged in a matrix at the center of the top plate 11 so that the main electrode horizontal bar portions 15 x are parallel to face the object to be processed 13. Has been.
  • the processing object 13 is a plate-like member.
  • the processing object 13 is, for example, a glass substrate. This may be a glass substrate for a liquid crystal display panel, for example.
  • the RF power supply 8 is connected to the plurality of main electrodes 15 via the matching network 9.
  • An RF power source 18 is connected to the cleaning electrode 31 via the matching network 19.
  • the RF power source 18 for the cleaning electrode 31 is provided separately from the RF power source 8 for the main electrode 15.
  • the plurality of main electrodes 15 and the cleaning electrode 31 are controlled by separate control devices (not shown).
  • FIG. 5 shows an enlarged view of each of the cleaning electrodes 31 shown in FIG.
  • the cleaning electrode 31 connects two cleaning electrode vertical bar portions 31 y penetrating the top plate 11 and lower ends of the cleaning electrode vertical bar portions 31 y below the lower surface of the top plate 11.
  • One cleaning electrode bridge portion 31v is included.
  • the insulating member 22 is disposed so as to surround the cleaning electrode vertical bar portion 31 y, thereby ensuring insulation between the top plate 11 and the cleaning electrode 31.
  • Both of the two cleaning electrode vertical bar portions 31y are electrically connected to the matching network 19 outside the chamber.
  • the main electrodes arranged for the purpose of performing plasma treatment on the object to be processed may be able to generate sufficient plasma at the center of the chamber, but plasma generation is not performed at the periphery of the inner space of the chamber. The degree tends to be insufficient.
  • the cleaning electrode 31 in addition to the plurality of main electrodes 15, the cleaning electrode 31 is provided outside the region where the plurality of main electrodes 15 are arranged. The plasma can be sufficiently generated by the cleaning electrode 31 even in the region in the vicinity of the side wall 12 where the generation of plasma for cleaning tends to be insufficient only by the plurality of main electrodes 15.
  • the cleaning electrode 31 is not supplied with electric power when the processing target 13 is subjected to plasma processing, and is supplied with electric power when cleaning the inner surface of the chamber. Therefore, the plasma processing for the normal processing target 13 is performed. It can play a role of assisting plasma generation in the vicinity of the side wall during cleaning. Thus, during cleaning, power is supplied to both the main electrode 15 and the cleaning electrode 31, so that the plasma density can be uniformly made uniform throughout the entire chamber space, and the cleaning efficiency can be improved.
  • the cleaning electrode 31 may be provided on the top plate 11.
  • the cleaning electrode 31 when removing the top plate 11 for maintenance, not only the plurality of main electrodes 15 but also the cleaning electrode 31 are removed together with the top plate 11, so that the cleaning electrode 31 is in maintenance work. This is preferable because it does not interfere with the above. After the top plate 11 is removed, there can be no cleaning electrode inside the chamber, which facilitates maintenance inside the chamber, which is convenient.
  • the cleaning electrode 31 is preferably disposed along the entire circumference of the side wall 12. This is because, by adopting this configuration, it is possible to more reliably perform cleaning of the vicinity of the side wall 12 around the side wall 12, which tends to be insufficiently cleaned.
  • One cleaning electrode may be provided in one plasma processing apparatus.
  • one plasma processing apparatus may include a plurality of cleaning electrodes. It is preferable that the plasma processing apparatus includes a plurality of cleaning electrodes.
  • the plasma treatment apparatus is arranged so as to be outside the region where the plurality of main electrodes 15 are arranged when viewed from above, and no power is supplied when the treatment target 13 is subjected to plasma treatment.
  • the plurality of cleaning electrodes are preferably arranged along the entire circumference of the side wall 12. This is because, by adopting this configuration, it is possible to more reliably perform cleaning of the vicinity of the side wall 12 around the side wall 12, which tends to be insufficiently cleaned.
  • the main electrodes 15 are preferably arranged in a matrix as viewed from above. This is because it is easy to manage the plasma density in the chamber by adopting this configuration.
  • the plurality of main electrodes 15 and the cleaning electrodes 31 are preferably controlled by separate control devices. This is because by adopting this configuration, plasma can be generated by optimal control for the central portion and the peripheral portion in the chamber, respectively, and the cleaning efficiency can be increased.
  • the plurality of cleaning electrodes 31 may be of two types, one arranged at the corner of the side wall 12 and one arranged along the straight side wall 12, and these have different shapes and sizes. Also good. All of them are arranged so as to protrude from the top plate.
  • FIG. 6 A first example of a plurality of cleaning electrodes 31 is shown in FIGS.
  • FIG. 6 the components above the top plate are not shown.
  • FIG. 7 shows the structure of FIG. 6 viewed from above.
  • the cleaning electrode 31b is installed at the corner of the side wall 12, and is arranged so that the bridge portion is slanted.
  • the cleaning electrode 31b may be the same size or a different size compared to the cleaning electrode 31a.
  • FIG. 9 is a top view of the structure of FIG.
  • the cleaning electrode 31c is installed at the corner of the side wall 12, and the bridge portion is bent along the shape of the corner.
  • the cleaning electrode 31 c is not in contact with the corner portion of the side wall 12, but is bent along the corner portion of the side wall 12 while being kept away from the side wall 12.
  • the cleaning electrode 31 is disposed on an extension of one row of the plurality of main electrodes 15 arranged in a matrix. This means, for example, a positional relationship as if the cleaning electrode 31 is arranged as a continuation of the row of the main electrodes 15 as shown in FIG.
  • the corresponding cleaning electrode is more preferably the same size as the main electrode. This is because the plasma density can be easily managed with such a configuration.
  • the cleaning electrode 31 and the plurality of main electrodes 15 each have a horizontal bar portion, and the horizontal bar portions have the same height. This is because the plasma density can be easily managed with such a configuration.
  • FIG. 11 A cross-sectional view of the plasma processing apparatus 102 in the present embodiment is shown in FIG. 11, and a schematic plan view is shown in FIG. FIG. 12 corresponds to a state where the top is seen through the top plate from above.
  • FIG. 12 the top plate itself is not shown, but the electrodes protruding downward from the top plate are shown.
  • Other parts are the same as those described in the first embodiment.
  • the plasma processing apparatus 102 includes a plurality of cleaning electrodes 32 instead of the plurality of cleaning electrodes 31 in the first embodiment.
  • the plurality of cleaning electrodes 32 are arranged on the entire circumference of the side wall 12, but are all arranged in parallel to each other. Therefore, the cleaning electrode 32 is arranged in parallel to the side wall 12 on the surfaces 12b and 12d of the side wall 12, but the cleaning electrode 32 is arranged in a direction perpendicular to the side wall 12 on the surfaces 12a and 12c.
  • the plurality of cleaning electrodes 32 are also parallel to the plurality of main electrodes 15.
  • the same effects as in the first embodiment can be obtained.
  • the cleaning electrode is arranged in a direction perpendicular to the side wall on a part of the side wall, the width of the cleaning electrode in the space increases, but the directions of all the cleaning electrodes are aligned. Therefore, it is preferable in that the plasma density can be easily managed. Further, in the present embodiment, it is easy to make all the cleaning electrodes the same size, which leads to a reduction in the types of components.
  • FIG. 13 A cross-sectional view of the plasma processing apparatus 103 according to the present embodiment is shown in FIG. 13, and a schematic plan view is shown in FIG. FIG. 14 corresponds to a state where the top plate is viewed from below through the top plate.
  • the top plate itself is not shown, but the electrodes protruding below the top plate are shown.
  • the cleaning electrode 33 is provided not on the top plate 11 but on the side wall 12. Other parts are the same as those described in the first embodiment.
  • FIG. 15 shows an enlarged cross-sectional view of the vicinity of the cleaning electrode 33 as viewed from above.
  • the cleaning electrode 33 includes two cleaning electrode horizontal bar portions 33x penetrating the side wall 12 and one cleaning electrode bridge portion 33v connecting the ends of the cleaning electrode horizontal bar portions 33x to each other inside the chamber.
  • the same effects as in the first embodiment can be obtained. This is because even if the cleaning electrode is provided on the side wall as in this embodiment, it can contribute to uniform plasma density in the vicinity of the side wall.
  • the cleaning electrode 33 is provided at a position lower than the lower end of the main electrode 15.
  • the cleaning electrode bridge portion 33v which is a bar shape extending in the horizontal direction has the same height as the main electrode horizontal bar portion 15x of the main electrode 15.
  • Such a configuration can also contribute to facilitating control of the plasma distribution.
  • the cleaning electrode 33 is arranged close to the top plate 11 to the same height as the main electrode horizontal bar portion 15x, the processing object 13 is taken in and out from the opening (not shown) of the side wall 12.
  • the cleaning electrode 33 is preferable because it does not hinder access.
  • FIG. 18 shows a flowchart of a method for using the plasma processing apparatus according to the present invention.
  • the plasma processing apparatus 101 shown in Embodiment Mode 1 will be described as an example.
  • the method of using this plasma processing apparatus is shown in FIG. 20, step S1 in which a processing object 13 is placed in a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side.
  • step S1 in which a processing object 13 is placed in a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side.
  • power is applied to the plurality of main electrodes 15 arranged in the center of the top plate 11 so as to protrude downward from the top plate 11 and face the processing target 13.
  • Step S2 for processing the processing object 13 by supplying power and not supplying power to the cleaning electrode 31 arranged outside the region where the plurality of main electrodes 15 are arranged when viewed from above. As shown in FIG. 21, by supplying power to both the plurality of main electrodes 15 and the cleaning electrodes 31 while supplying a cleaning gas of a type different from the reaction gas into the chamber. Te, and a step S3 for cleaning the inner surface of said chamber. Prior to step S3, it is preferable to remove the processing object 13 from the chamber.
  • the inner surface of the chamber is cleaned by supplying power to both the plurality of main electrodes 15 and the cleaning electrode 31 in step S3, plasma generation for cleaning is performed only by the plurality of main electrodes 15.
  • the cleaning electrode 31 can sufficiently generate plasma even in a region in the vicinity of the side wall 12 that tends to be insufficient. In this way, since the plasma density can be uniformly made uniform throughout the entire space in the chamber, the inside of the chamber can be efficiently cleaned.
  • steps S1 and S2 are performed once, but steps S1 and S2 may be repeated a plurality of times. Steps S3 and S2 may be repeated many times, and step S3 may be performed when deposits on the inner surface of the chamber accumulate to some extent.
  • FIG. 22 shows a flowchart of the cleaning method for the plasma processing apparatus according to the present invention.
  • This plasma processing apparatus cleaning method includes a step S11 of starting supply of a cleaning gas into a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, and is disposed in the chamber as shown in FIG.
  • the cleaning electrode 31 in step S12 to clean the inner surface of the chamber. Therefore, even in the region near the side wall 12 where the cleaning tends to be insufficient only with the plurality of main electrodes 15, The cleaning electrode 31 can generate a sufficient plasma for cleaning.
  • whether or not electric power is supplied to the plurality of main electrodes 15 is not limited while the electrodes are supplied to the cleaning electrode 31 in step S12.
  • plasma may be generated at a density as uniform as possible throughout the chamber, and cleaning may be performed collectively.
  • the plasma processing apparatus 101 shown in the first embodiment has been described as an example, but a plasma processing apparatus of another embodiment may be used.
  • the plasma processing apparatus in Embodiment 6 based on this invention is demonstrated.
  • the plasma processing apparatus in the present embodiment has the same appearance as that shown in each of the above embodiments. That is, the plasma processing apparatus includes a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, a stage 14 for disposing a processing target 13 in the chamber, and a downward direction from the top plate 11.
  • a plurality of main electrodes 15 arranged in the center of the top plate 11 so as to protrude and face the object to be processed 13, and when viewed from above, are outside the region where the plurality of main electrodes 15 are arranged.
  • a cleaning electrode arranged as described above.
  • the plasma can be sufficiently generated by the cleaning electrode even in the peripheral portion of the inner space of the chamber, that is, in the vicinity of the side wall. Therefore, when the inner surface of the chamber is cleaned, the entire inner space of the chamber is finely divided. The density can be made uniform and cleaning can be performed efficiently.
  • the cleaning electrode is preferably supplied with electric power when cleaning the inner surface of the chamber.
  • the present invention can be used for a plasma processing apparatus, a method for using the same, and a cleaning method for the plasma processing apparatus.

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Abstract

A plasma processing apparatus (101) is provided with: a chamber, which includes side walls (12) surrounding the outer circumference of the chamber, and a top plate (11) covering the upper side of the chamber; a stage (14) for disposing a subject to be processed (13) in the chamber; and a plurality of main electrodes (15) arranged at the center of the top plate (11) such that the main electrodes protrude downward from the top plate (11) and face the subject (13); and a cleaning electrode (31), which is, when viewed from the top, disposed outside of the region wherein the main electrodes (15) are arranged and is not supplied with power at the time of plasma-processing the subject (13), and is supplied with power at the time of cleaning the inner surface of the chamber.

Description

プラズマ処理装置、その使用方法およびプラズマ処理装置のクリーニング方法Plasma processing apparatus, method of using the same, and cleaning method of plasma processing apparatus
　本発明は、プラズマ処理装置、その使用方法およびプラズマ処理装置のクリーニング方法に関するものである。 The present invention relates to a plasma processing apparatus, a method for using the same, and a cleaning method for the plasma processing apparatus.
　従来技術に基づくプラズマ処理装置の一例は、たとえば特開２００７－１２３００８号公報（特許文献１）に記載されている。この文献では、Ｕ字形状の高周波アンテナがチャンバの天板を貫通してチャンバ内に突出するように配置された構成の装置が開示されている。この装置は、高周波アンテナに高周波電力を印加することによって誘導結合型プラズマを発生させ、このプラズマによって対象物に処理を施すためのものである。 An example of a plasma processing apparatus based on the prior art is described in, for example, Japanese Patent Application Laid-Open No. 2007-123008 (Patent Document 1). This document discloses an apparatus having a configuration in which a U-shaped high-frequency antenna is arranged so as to penetrate the top plate of the chamber and protrude into the chamber. This apparatus generates inductively coupled plasma by applying high-frequency power to a high-frequency antenna, and processes an object with this plasma.
　また、特開２００４－２００２３２号公報（特許文献２）にはプラズマ生成装置について記載されている。この文献では、真空容器内に生成するプラズマの密度を均一にするために、高周波アンテナを真空容器の側壁に配列した構成が開示されている。高周波アンテナは真空容器の内部中央に配置された基板台を取り囲むように一定の高さに配列されている。 In addition, JP 2004-200292 A (Patent Document 2) describes a plasma generation apparatus. This document discloses a configuration in which high-frequency antennas are arranged on the side wall of a vacuum vessel in order to make the density of plasma generated in the vacuum vessel uniform. The high-frequency antennas are arranged at a certain height so as to surround a substrate table disposed at the center inside the vacuum vessel.
特開２００７－１２３００８号公報JP 2007-123008 A 特開２００４－２００２３２号公報JP 2004-200292 A
　特許文献１，２のいずれの装置においても、高周波アンテナから電力を印加することによって対象物の処理を行なうだけでなく、供給するガスの種類を切り替えて高周波アンテナから電力を印加することによってプラズマを発生させ、このプラズマによってチャンバ内のクリーニングを行なうことが考えられる。 In any of the devices disclosed in Patent Documents 1 and 2, not only the object is processed by applying power from the high frequency antenna, but also plasma is generated by switching the type of gas to be supplied and applying power from the high frequency antenna. It is conceivable that the chamber is cleaned and the inside of the chamber is cleaned by this plasma.
　特許文献１に示された装置では、高周波アンテナはいずれも天板中央部に設けられているので、チャンバの中央部に比べて周縁部ではプラズマ密度が不均一となりがちである。一方、特許文献２に示された装置では、高周波アンテナはいずれも側壁に設けられているので、側壁の近傍には均一な密度でプラズマを生成することができるかもしれないが、チャンバの中央付近では、どの高周波アンテナからも遠く離れているので、均一な密度でのプラズマ形成は困難である。 In the apparatus disclosed in Patent Document 1, since all the high-frequency antennas are provided in the central part of the top plate, the plasma density tends to be nonuniform in the peripheral part as compared with the central part of the chamber. On the other hand, in the apparatus shown in Patent Document 2, since all the high-frequency antennas are provided on the side wall, it may be possible to generate plasma with a uniform density near the side wall, but near the center of the chamber. Then, since it is far away from any high-frequency antenna, it is difficult to form plasma with a uniform density.
　したがって、これらの装置で高周波アンテナから電力を印加することによってチャンバクリーニングをしようとした場合、中央付近か側壁近傍のいずれかにおいてクリーニングの進行が遅くなり、クリーニング工程に要する時間が長くなってしまう。また、クリーニング時にプラズマ密度が不均一となっていることに起因して、チャンバの中央付近か側壁近傍のいずれかに残渣が生じてしまう可能性がある。 Therefore, when chamber cleaning is attempted by applying electric power from a high-frequency antenna with these devices, the progress of the cleaning is delayed either near the center or near the side wall, and the time required for the cleaning process becomes longer. In addition, due to the non-uniform plasma density during cleaning, there is a possibility that residue may be generated either near the center of the chamber or near the side wall.
　そこで、本発明は、クリーニング時のプラズマ密度を均一化することができるプラズマ処理装置を目的とする。 Therefore, an object of the present invention is to provide a plasma processing apparatus that can make the plasma density uniform during cleaning.
　上記目的を達成するため、本発明に基づくプラズマ処理装置は、外周を取囲む側壁と上側を塞ぐ天板とを含むチャンバと、上記チャンバ内に処理対象物を配置するためのステージと、上記天板から下向きに突出して上記処理対象物に対向するように上記天板の中央部に配列されている複数の主電極と、上から見たときに上記複数の主電極が配列されている領域の外側となるように配置され、上記処理対象物をプラズマ処理する際には電力が供給されず、上記チャンバの内面をクリーニングする際には電力が供給される、クリーニング電極とを備える。 In order to achieve the above object, a plasma processing apparatus according to the present invention includes a chamber including a side wall that surrounds the outer periphery and a top plate that closes the upper side, a stage for placing a processing object in the chamber, and the ceiling. A plurality of main electrodes arranged in the center of the top plate so as to protrude downward from the plate and face the object to be processed, and a region in which the plurality of main electrodes are arranged when viewed from above A cleaning electrode is disposed so as to be on the outer side, and is not supplied with electric power when plasma processing the object to be processed, and supplied with electric power when cleaning the inner surface of the chamber.
　上記目的を達成するため、本発明に基づくプラズマ処理装置の使用方法は、外周を取囲む側壁と上側を塞ぐ天板とを含むチャンバ内に処理対象物を配置する工程と、上記チャンバ内に反応ガスを供給しつつ、上記天板から下向きに突出して上記処理対象物に対向するように上記天板の中央部に配列されている複数の主電極に電力を供給し、かつ、上から見たときに上記複数の主電極が配列されている領域の外側に配置されたクリーニング電極には電力を供給しないことによって、上記処理対象物を処理する工程と、上記チャンバ内に上記反応ガスとは異なる種類のクリーニングガスを供給しつつ、上記複数の主電極および上記クリーニング電極の両方に電力を供給することによって、上記チャンバの内面をクリーニングする工程とを含む。 In order to achieve the above object, a method of using a plasma processing apparatus according to the present invention includes a step of placing a processing object in a chamber including a side wall that surrounds an outer periphery and a top plate that closes the upper side, and a reaction in the chamber. While supplying gas, power is supplied to the plurality of main electrodes arranged in the center of the top plate so as to protrude downward from the top plate and face the object to be processed, and viewed from above. Sometimes, the step of processing the object to be processed is different from the reactive gas in the chamber by not supplying power to the cleaning electrode arranged outside the region where the plurality of main electrodes are arranged. Cleaning the inner surface of the chamber by supplying power to both the plurality of main electrodes and the cleaning electrode while supplying a type of cleaning gas.
　本発明によれば、チャンバ内空間の周縁部すなわち側壁近傍の領域についても、クリーニング電極によってプラズマを十分に生成することができるので、チャンバの内面をクリーニングする際にチャンバ内空間の全体にわたってきめこまかくプラズマ密度の均一化を図ることができ、効率良くクリーニングを行なうことができる。 According to the present invention, the plasma can be sufficiently generated by the cleaning electrode also in the peripheral portion of the inner space of the chamber, that is, in the vicinity of the side wall. Therefore, when the inner surface of the chamber is cleaned, the entire inner space of the chamber is finely divided. The density can be made uniform and cleaning can be performed efficiently.
本発明に基づく実施の形態１におけるプラズマ処理装置の断面図である。It is sectional drawing of the plasma processing apparatus in Embodiment 1 based on this invention. 本発明に基づく実施の形態１におけるプラズマ処理装置の模式的な平面図である。It is a typical top view of the plasma processing apparatus in Embodiment 1 based on this invention. 本発明に基づく実施の形態１におけるプラズマ処理装置の主電極近傍の拡大断面図である。It is an expanded sectional view of the main electrode vicinity of the plasma processing apparatus in Embodiment 1 based on this invention. 本発明に基づく実施の形態１におけるプラズマ処理装置のクリーニング電極近傍の拡大透視斜視図である。It is an expansion see-through | perspective perspective view of the cleaning electrode vicinity of the plasma processing apparatus in Embodiment 1 based on this invention. 図２におけるクリーニング電極の拡大図である。FIG. 3 is an enlarged view of a cleaning electrode in FIG. 2. 複数のクリーニング電極の第１の例の斜視図である。It is a perspective view of the 1st example of a plurality of cleaning electrodes. 複数のクリーニング電極の第１の例の平面図である。It is a top view of the 1st example of a plurality of cleaning electrodes. 複数のクリーニング電極の第２の例の斜視図である。It is a perspective view of the 2nd example of a plurality of cleaning electrodes. 複数のクリーニング電極の第２の例の平面図である。It is a top view of the 2nd example of a plurality of cleaning electrodes. 本発明に基づく実施の形態１におけるプラズマ処理装置の主電極とクリーニング電極との位置関係の説明図である。It is explanatory drawing of the positional relationship of the main electrode and cleaning electrode of the plasma processing apparatus in Embodiment 1 based on this invention. 本発明に基づく実施の形態２におけるプラズマ処理装置の断面図である。It is sectional drawing of the plasma processing apparatus in Embodiment 2 based on this invention. 本発明に基づく実施の形態２におけるプラズマ処理装置の模式的な平面図である。It is a typical top view of the plasma processing apparatus in Embodiment 2 based on this invention. 本発明に基づく実施の形態３におけるプラズマ処理装置の断面図である。It is sectional drawing of the plasma processing apparatus in Embodiment 3 based on this invention. 本発明に基づく実施の形態３におけるプラズマ処理装置の模式的な平面図である。It is a typical top view of the plasma processing apparatus in Embodiment 3 based on this invention. 本発明に基づく実施の形態３におけるプラズマ処理装置のクリーニング電極近傍の拡大断面図である。It is an expanded sectional view of the cleaning electrode vicinity of the plasma processing apparatus in Embodiment 3 based on this invention. 本発明に基づく実施の形態３におけるプラズマ処理装置の変形例の断面図である。It is sectional drawing of the modification of the plasma processing apparatus in Embodiment 3 based on this invention. 本発明に基づく実施の形態３におけるプラズマ処理装置の変形例の主電極とクリーニング電極との位置関係についての説明図である。It is explanatory drawing about the positional relationship of the main electrode and cleaning electrode of the modification of the plasma processing apparatus in Embodiment 3 based on this invention. 本発明に基づく実施の形態４におけるプラズマ処理装置の使用方法のフローチャートである。It is a flowchart of the usage method of the plasma processing apparatus in Embodiment 4 based on this invention. 本発明に基づく実施の形態４におけるプラズマ処理装置の使用方法の工程Ｓ１の説明図である。It is explanatory drawing of process S1 of the usage method of the plasma processing apparatus in Embodiment 4 based on this invention. 本発明に基づく実施の形態４におけるプラズマ処理装置の使用方法の工程Ｓ２の説明図である。It is explanatory drawing of process S2 of the usage method of the plasma processing apparatus in Embodiment 4 based on this invention. 本発明に基づく実施の形態４におけるプラズマ処理装置の使用方法の工程Ｓ３の説明図である。It is explanatory drawing of process S3 of the usage method of the plasma processing apparatus in Embodiment 4 based on this invention. 本発明に基づく実施の形態５におけるプラズマ処理装置のクリーニング方法のフローチャートである。It is a flowchart of the cleaning method of the plasma processing apparatus in Embodiment 5 based on this invention. 本発明に基づく実施の形態５におけるプラズマ処理装置のクリーニング方法の工程Ｓ１２の説明図である。It is explanatory drawing of process S12 of the cleaning method of the plasma processing apparatus in Embodiment 5 based on this invention.
　（実施の形態１）
　図１～図５を参照して、本発明に基づく実施の形態１におけるプラズマ処理装置について説明する。本実施の形態におけるプラズマ処理装置１０１の断面図を図１に示し、模式的な平面図を図２に示す。図２は、上から天板を透過して下方を見た状態に相当する。図２では、天板自体は表示していないが、天板より下側に突出する電極は表示している。プラズマ処理装置１０１は、外周を取囲む側壁１２と上側を塞ぐ天板１１とを含むチャンバと、このチャンバ内に処理対象物１３を配置するためのステージ１４と、複数の主電極１５と、クリーニング電極３１とを備える。複数の主電極１５は、天板１１から下向きに突出している。複数の主電極１５は、処理対象物１３に対向するように天板１１の中央部に配列されている。クリーニング電極３１は、上から見たときに複数の主電極１５が配列されている領域の外側となるように配置されている。クリーニング電極３１は、処理対象物１３をプラズマ処理する際には電力が供給されず、前記チャンバの内面をクリーニングする際には電力が供給されるものである。 (Embodiment 1)
With reference to FIGS. 1 to 5, a plasma processing apparatus in accordance with the first exemplary embodiment of the present invention will be described. A cross-sectional view of the plasma processing apparatus 101 according to the present embodiment is shown in FIG. 1, and a schematic plan view is shown in FIG. FIG. 2 corresponds to a state in which the top is seen through the top plate from above. In FIG. 2, the top plate itself is not shown, but the electrodes protruding below the top plate are shown. The plasma processing apparatus 101 includes a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, a stage 14 for disposing a processing target 13 in the chamber, a plurality of main electrodes 15, and a cleaning. An electrode 31 is provided. The plurality of main electrodes 15 protrude downward from the top plate 11. The plurality of main electrodes 15 are arranged in the center of the top plate 11 so as to face the processing target 13. The cleaning electrode 31 is disposed outside the region where the plurality of main electrodes 15 are arranged when viewed from above. The cleaning electrode 31 is not supplied with electric power when the processing target 13 is subjected to plasma processing, and is supplied with electric power when cleaning the inner surface of the chamber.
　このプラズマ処理装置１０１における主電極１５近傍の拡大断面図を図３に示す。図３に示すように、複数の主電極１５は、天板１１を貫通する２本の主電極縦棒部分１５ｙと天板１１の下面より下側で主電極縦棒部分１５ｙの下端同士を互いに接続する１本の主電極横棒部分１５ｘとをそれぞれ含む。複数の主電極１５が天板１１を貫通する部分では、絶縁部材２１が各主電極縦棒部分１５ｙを取り囲むように配置されることによって、天板１１と各主電極１５との間の絶縁が確保されている。 FIG. 3 shows an enlarged cross-sectional view of the vicinity of the main electrode 15 in the plasma processing apparatus 101. As shown in FIG. 3, the plurality of main electrodes 15 include two main electrode vertical bar portions 15 y that penetrate the top plate 11 and lower ends of the main electrode vertical bar portions 15 y that are below the lower surface of the top plate 11. One main electrode horizontal bar portion 15x to be connected is included. In the portion where the plurality of main electrodes 15 penetrate the top plate 11, the insulating member 21 is disposed so as to surround each main electrode vertical bar portion 15 y, so that the insulation between the top plate 11 and each main electrode 15 is achieved. It is secured.
　図１、図２に示すように、複数の主電極１５は、主電極横棒部分１５ｘがいずれも平行となって処理対象物１３に対向するように天板１１の中央部にマトリクス状に配列されている。 As shown in FIGS. 1 and 2, the plurality of main electrodes 15 are arranged in a matrix at the center of the top plate 11 so that the main electrode horizontal bar portions 15 x are parallel to face the object to be processed 13. Has been.
　図１に示すように、処理対象物１３は板状の部材である。本実施の形態では、処理対象物１３はたとえばガラス基板である。これは、たとえば液晶表示パネル用のガラス基板であってもよい。 As shown in FIG. 1, the processing object 13 is a plate-like member. In the present embodiment, the processing object 13 is, for example, a glass substrate. This may be a glass substrate for a liquid crystal display panel, for example.
　複数の主電極１５に対しては、マッチングネットワーク９を介してＲＦ電源８が接続されている。クリーニング電極３１に対しては、マッチングネットワーク１９を介してＲＦ電源１８が接続されている。クリーニング電極３１のためのＲＦ電源１８は、主電極１５のためのＲＦ電源８とは別に設けられたものである。複数の主電極１５とクリーニング電極３１とは別々の制御装置（図示せず）によって制御されている。 The RF power supply 8 is connected to the plurality of main electrodes 15 via the matching network 9. An RF power source 18 is connected to the cleaning electrode 31 via the matching network 19. The RF power source 18 for the cleaning electrode 31 is provided separately from the RF power source 8 for the main electrode 15. The plurality of main electrodes 15 and the cleaning electrode 31 are controlled by separate control devices (not shown).
　クリーニング電極３１近傍の拡大透視斜視図を図４に示す。図２に示すクリーニング電極３１の各々を拡大したところを図５に示す。図４に示すように、クリーニング電極３１は、天板１１を貫通する２本のクリーニング電極縦棒部分３１ｙと天板１１の下面より下側でクリーニング電極縦棒部分３１ｙの下端同士を互いに接続する１本のクリーニング電極ブリッジ部分３１ｖとをそれぞれ含む。クリーニング電極３１が天板１１を貫通する部分では、絶縁部材２２がクリーニング電極縦棒部分３１ｙを取り囲むように配置されることによって、天板１１とクリーニング電極３１との間の絶縁が確保されている。２本のクリーニング電極縦棒部分３１ｙはいずれもチャンバ外においてマッチングネットワーク１９に電気的に接続されている。 An enlarged perspective view of the vicinity of the cleaning electrode 31 is shown in FIG. FIG. 5 shows an enlarged view of each of the cleaning electrodes 31 shown in FIG. As shown in FIG. 4, the cleaning electrode 31 connects two cleaning electrode vertical bar portions 31 y penetrating the top plate 11 and lower ends of the cleaning electrode vertical bar portions 31 y below the lower surface of the top plate 11. One cleaning electrode bridge portion 31v is included. In the portion where the cleaning electrode 31 penetrates the top plate 11, the insulating member 22 is disposed so as to surround the cleaning electrode vertical bar portion 31 y, thereby ensuring insulation between the top plate 11 and the cleaning electrode 31. . Both of the two cleaning electrode vertical bar portions 31y are electrically connected to the matching network 19 outside the chamber.
　一般的に、処理対象物に対してプラズマ処理を施す目的で配列された主電極は、チャンバの中央においては十分なプラズマを生成できるかもしれないが、チャンバ内空間の周縁部においてはプラズマ生成の度合いが不十分となりがちである。しかし、本実施の形態におけるプラズマ処理装置１０１では、複数の主電極１５の他に、複数の主電極１５が配列されている領域の外側にクリーニング電極３１を備えているので、クリーニングの際には複数の主電極１５によるのみではクリーニングのためのプラズマ生成が不十分となりがちな側壁１２近傍の領域についても、クリーニング電極３１によってプラズマを十分に生成することができる。クリーニング電極３１は、処理対象物１３をプラズマ処理する際には電力が供給されず、チャンバの内面をクリーニングする際には電力が供給されるものであるので、通常の処理対象物１３に対するプラズマ処理の妨げとはならず、クリーニング時の側壁近傍におけるプラズマ生成の補助の役割を担うことができる。こうして、クリーニング時には、主電極１５とクリーニング電極３１との両方に電力が供給されることによって、チャンバ内空間の全体にわたってきめこまかくプラズマ密度の均一化を図ることができ、クリーニング効率を高めることができる。 In general, the main electrodes arranged for the purpose of performing plasma treatment on the object to be processed may be able to generate sufficient plasma at the center of the chamber, but plasma generation is not performed at the periphery of the inner space of the chamber. The degree tends to be insufficient. However, in the plasma processing apparatus 101 according to the present embodiment, in addition to the plurality of main electrodes 15, the cleaning electrode 31 is provided outside the region where the plurality of main electrodes 15 are arranged. The plasma can be sufficiently generated by the cleaning electrode 31 even in the region in the vicinity of the side wall 12 where the generation of plasma for cleaning tends to be insufficient only by the plurality of main electrodes 15. The cleaning electrode 31 is not supplied with electric power when the processing target 13 is subjected to plasma processing, and is supplied with electric power when cleaning the inner surface of the chamber. Therefore, the plasma processing for the normal processing target 13 is performed. It can play a role of assisting plasma generation in the vicinity of the side wall during cleaning. Thus, during cleaning, power is supplied to both the main electrode 15 and the cleaning electrode 31, so that the plasma density can be uniformly made uniform throughout the entire chamber space, and the cleaning efficiency can be improved.
　本実施の形態で示したように、クリーニング電極３１は、天板１１に設けられている構成であってよい。このようになっていれば、メンテナンスのために天板１１を取り外すときには、複数の主電極１５とだけでなくクリーニング電極３１も天板１１と一体となって取り外されるので、クリーニング電極３１がメンテナンス作業の妨げとならないので好ましい。天板１１を取り外した後はチャンバ内部にはクリーニング電極が全くない状態とすることもできるので、チャンバ内部のメンテナンスがしやすくなり、好都合である。 As shown in the present embodiment, the cleaning electrode 31 may be provided on the top plate 11. In this case, when removing the top plate 11 for maintenance, not only the plurality of main electrodes 15 but also the cleaning electrode 31 are removed together with the top plate 11, so that the cleaning electrode 31 is in maintenance work. This is preferable because it does not interfere with the above. After the top plate 11 is removed, there can be no cleaning electrode inside the chamber, which facilitates maintenance inside the chamber, which is convenient.
　本実施の形態で示したように、クリーニング電極３１は、側壁１２の全周に沿うように配置されていることが好ましい。この構成を採用することにより、側壁１２の全周にわたって、側壁近傍の、本来であればクリーニングが不十分となりがちな領域のクリーニングをより確実に行なうことができるからである。本実施の形態では、クリーニング電極３１が複数あるが、クリーニング電極が１つだけの場合であっても、その１つのクリーニング電極が長いものであって側壁の全周に沿うように配置されていることが好ましい。 As shown in the present embodiment, the cleaning electrode 31 is preferably disposed along the entire circumference of the side wall 12. This is because, by adopting this configuration, it is possible to more reliably perform cleaning of the vicinity of the side wall 12 around the side wall 12, which tends to be insufficiently cleaned. In the present embodiment, there are a plurality of cleaning electrodes 31, but even when there is only one cleaning electrode, the one cleaning electrode is long and arranged along the entire circumference of the side wall. Is preferred.
　１台のプラズマ処理装置に備わるクリーニング電極は１つであってもよい。あるいは、１台のプラズマ処理装置が複数のクリーニング電極を備えていてもよい。プラズマ処理装置は複数のクリーニング電極を備えていることは好ましいことである。言い換えれば、プラズマ処置装置は、上から見たときに複数の主電極１５が配列されている領域の外側となるように配置され、処理対象物１３をプラズマ処理する際には電力が供給されず、前記チャンバの内面をクリーニングする際には電力が供給される、複数のクリーニング電極３１を備えることが好ましい。このように複数のクリーニング電極を備えていれば、チャンバの内面をクリーニングする際にきめ細かく対応することができるからである。複数のクリーニング電極は、側壁１２の全周に沿うように配列されていることが好ましい。この構成を採用することにより、側壁１２の全周にわたって、側壁近傍の、本来であればクリーニングが不十分となりがちな領域のクリーニングをより確実に行なうことができるからである。 One cleaning electrode may be provided in one plasma processing apparatus. Alternatively, one plasma processing apparatus may include a plurality of cleaning electrodes. It is preferable that the plasma processing apparatus includes a plurality of cleaning electrodes. In other words, the plasma treatment apparatus is arranged so as to be outside the region where the plurality of main electrodes 15 are arranged when viewed from above, and no power is supplied when the treatment target 13 is subjected to plasma treatment. It is preferable to provide a plurality of cleaning electrodes 31 to which power is supplied when cleaning the inner surface of the chamber. This is because, if a plurality of cleaning electrodes are provided in this way, it is possible to cope finely when cleaning the inner surface of the chamber. The plurality of cleaning electrodes are preferably arranged along the entire circumference of the side wall 12. This is because, by adopting this configuration, it is possible to more reliably perform cleaning of the vicinity of the side wall 12 around the side wall 12, which tends to be insufficiently cleaned.
　本実施の形態で示したように、主電極１５は上から見てマトリクス状に配列されていることが好ましい。この構成を採用することにより、チャンバ内におけるプラズマ密度の管理が行ないやすくなるからである。 As shown in the present embodiment, the main electrodes 15 are preferably arranged in a matrix as viewed from above. This is because it is easy to manage the plasma density in the chamber by adopting this configuration.
　本実施の形態で示したように、複数の主電極１５とクリーニング電極３１とは別々の制御装置によって制御されていることが好ましい。この構成を採用することにより、チャンバ内の中央部と周縁部とに対してそれぞれ最適な制御によってプラズマを発生させることができ、クリーニングの効率を高めることができるからである。 As shown in the present embodiment, the plurality of main electrodes 15 and the cleaning electrodes 31 are preferably controlled by separate control devices. This is because by adopting this configuration, plasma can be generated by optimal control for the central portion and the peripheral portion in the chamber, respectively, and the cleaning efficiency can be increased.
　複数のクリーニング電極３１には、側壁１２の角部に配置されるものと、直線状の側壁１２に沿って配置されるものとの２種類があってよく、これらは形状やサイズが異なっていてもよい。いずれも天板から突出するように配置されることには変わりない。 The plurality of cleaning electrodes 31 may be of two types, one arranged at the corner of the side wall 12 and one arranged along the straight side wall 12, and these have different shapes and sizes. Also good. All of them are arranged so as to protrude from the top plate.
　複数のクリーニング電極３１の第１の例を図６、図７に示す。図６では、天板から上にあるものについては図示省略している。図７は図６の構造を上から見たところである。クリーニング電極３１には、クリーニング電極３１ａと、クリーニング電極３１ｂとの２種類があってよい。クリーニング電極３１ｂは側壁１２の角部に設置されるものであって、ブリッジ部分が斜めに張られるように配置される。クリーニング電極３１ｂはクリーニング電極３１ａに比べて同じサイズのものであっても異なるサイズのものであってもよい。 A first example of a plurality of cleaning electrodes 31 is shown in FIGS. In FIG. 6, the components above the top plate are not shown. FIG. 7 shows the structure of FIG. 6 viewed from above. There may be two types of cleaning electrodes 31: a cleaning electrode 31a and a cleaning electrode 31b. The cleaning electrode 31b is installed at the corner of the side wall 12, and is arranged so that the bridge portion is slanted. The cleaning electrode 31b may be the same size or a different size compared to the cleaning electrode 31a.
　複数のクリーニング電極３１の第２の例を図８、図９に示す。図９は図８の構造を上から見たところである。クリーニング電極３１には、クリーニング電極３１ａと、クリーニング電極３１ｃとの２種類があってよい。クリーニング電極３１ｃは、側壁１２の角部に設置されるものであって、ブリッジ部分が角部の形状に沿って折れ曲がった形状となっている。クリーニング電極３１ｃは、側壁１２の角部に接しているわけではなく、側壁１２から離隔した状態を保ちながら、側壁１２の角部に沿って折れ曲がっている。 A second example of the plurality of cleaning electrodes 31 is shown in FIGS. FIG. 9 is a top view of the structure of FIG. There may be two types of cleaning electrodes 31: a cleaning electrode 31a and a cleaning electrode 31c. The cleaning electrode 31c is installed at the corner of the side wall 12, and the bridge portion is bent along the shape of the corner. The cleaning electrode 31 c is not in contact with the corner portion of the side wall 12, but is bent along the corner portion of the side wall 12 while being kept away from the side wall 12.
　本実施の形態で示したように、クリーニング電極３１は、マトリクス状に配列された複数の主電極１５のうちの１つの列の延長上に配置されていることが好ましい。これは、たとえば、図１０に示すように、あたかも主電極１５の列の続きとしてクリーニング電極３１が配置されているかのような位置関係を意味する。該当するクリーニング電極は主電極と同じサイズであればさらに好ましい。このような構成となっていれば、プラズマ密度の管理が行ないやすいからである。 As shown in the present embodiment, it is preferable that the cleaning electrode 31 is disposed on an extension of one row of the plurality of main electrodes 15 arranged in a matrix. This means, for example, a positional relationship as if the cleaning electrode 31 is arranged as a continuation of the row of the main electrodes 15 as shown in FIG. The corresponding cleaning electrode is more preferably the same size as the main electrode. This is because the plasma density can be easily managed with such a configuration.
　クリーニング電極３１と複数の主電極１５とはいずれも横棒部分を有し、前記横棒部分の高さ同士が等しくなっていることが好ましい。このような構成となっていれば、プラズマ密度の管理が行ないやすいからである。 It is preferable that the cleaning electrode 31 and the plurality of main electrodes 15 each have a horizontal bar portion, and the horizontal bar portions have the same height. This is because the plasma density can be easily managed with such a configuration.
　（実施の形態２）
　図１１、図１２を参照して、本発明に基づく実施の形態２におけるプラズマ処理装置について説明する。本実施の形態におけるプラズマ処理装置１０２の断面図を図１１に示し、模式的な平面図を図１２に示す。図１２は、上から天板を透過して下方を見た状態に相当する。図１２では、天板自体は表示していないが、天板より下側に突出する電極は表示している。他の部分は、実施の形態１で説明したと同様である。プラズマ処理装置１０２は、実施の形態１における複数のクリーニング電極３１に代えて複数のクリーニング電極３２を備えている。複数のクリーニング電極３２は側壁１２の全周に配列されているが、全て互いに平行に配列されている。したがって、側壁１２の面１２ｂ，１２ｄにおいては、クリーニング電極３２は側壁１２に平行に配置されているが、面１２ａ，１２ｃにおいては、クリーニング電極３２は側壁１２に垂直な方向に配置されている。複数のクリーニング電極３２は複数の主電極１５とも平行となっている。 (Embodiment 2)
With reference to FIG. 11 and FIG. 12, the plasma processing apparatus in Embodiment 2 based on this invention is demonstrated. A cross-sectional view of the plasma processing apparatus 102 in the present embodiment is shown in FIG. 11, and a schematic plan view is shown in FIG. FIG. 12 corresponds to a state where the top is seen through the top plate from above. In FIG. 12, the top plate itself is not shown, but the electrodes protruding downward from the top plate are shown. Other parts are the same as those described in the first embodiment. The plasma processing apparatus 102 includes a plurality of cleaning electrodes 32 instead of the plurality of cleaning electrodes 31 in the first embodiment. The plurality of cleaning electrodes 32 are arranged on the entire circumference of the side wall 12, but are all arranged in parallel to each other. Therefore, the cleaning electrode 32 is arranged in parallel to the side wall 12 on the surfaces 12b and 12d of the side wall 12, but the cleaning electrode 32 is arranged in a direction perpendicular to the side wall 12 on the surfaces 12a and 12c. The plurality of cleaning electrodes 32 are also parallel to the plurality of main electrodes 15.
　本実施の形態においても、実施の形態１と同様の効果を奏することができる。本実施の形態では、クリーニング電極が側壁の一部の面においては側壁に垂直な方向に配置されるので、クリーニング電極が空間に占める幅が大きくなってしまうが、全てのクリーニング電極の方向が揃っているので、プラズマ密度の管理がしやすいという点で好ましい。また、本実施の形態では、全てのクリーニング電極を同じサイズにすることも容易となるので、部品種類の削減にもつながる。 Also in the present embodiment, the same effects as in the first embodiment can be obtained. In this embodiment, since the cleaning electrode is arranged in a direction perpendicular to the side wall on a part of the side wall, the width of the cleaning electrode in the space increases, but the directions of all the cleaning electrodes are aligned. Therefore, it is preferable in that the plasma density can be easily managed. Further, in the present embodiment, it is easy to make all the cleaning electrodes the same size, which leads to a reduction in the types of components.
　（実施の形態３）
　図１３～図１５を参照して、本発明に基づく実施の形態３におけるプラズマ処理装置について説明する。本実施の形態におけるプラズマ処理装置１０３の断面図を図１３に示し、模式的な平面図を図１４に示す。図１４は、上から天板を透過して下方を見た状態に相当する。図１４では、天板自体は表示していないが、天板より下側に突出する電極は表示している。プラズマ処理装置１０３においては、クリーニング電極３３は、天板１１ではなく側壁１２に設けられている。他の部分は、実施の形態１で説明したと同様である。 (Embodiment 3)
A plasma processing apparatus according to the third embodiment based on the present invention will be described with reference to FIGS. A cross-sectional view of the plasma processing apparatus 103 according to the present embodiment is shown in FIG. 13, and a schematic plan view is shown in FIG. FIG. 14 corresponds to a state where the top plate is viewed from below through the top plate. In FIG. 14, the top plate itself is not shown, but the electrodes protruding below the top plate are shown. In the plasma processing apparatus 103, the cleaning electrode 33 is provided not on the top plate 11 but on the side wall 12. Other parts are the same as those described in the first embodiment.
　クリーニング電極３３近傍を上から見た拡大断面図を図１５に示す。クリーニング電極３３は、側壁１２を貫通する２本のクリーニング電極横棒部分３３ｘとチャンバの内部でクリーニング電極横棒部分３３ｘの端同士を互いに接続する１本のクリーニング電極ブリッジ部分３３ｖとを含む。 FIG. 15 shows an enlarged cross-sectional view of the vicinity of the cleaning electrode 33 as viewed from above. The cleaning electrode 33 includes two cleaning electrode horizontal bar portions 33x penetrating the side wall 12 and one cleaning electrode bridge portion 33v connecting the ends of the cleaning electrode horizontal bar portions 33x to each other inside the chamber.
　本実施の形態においても、実施の形態１と同様の効果を奏することができる。本実施の形態のようにクリーニング電極は側壁に設けることとしても、側壁近傍におけるプラズマ密度均一化に寄与しうるからである。 Also in the present embodiment, the same effects as in the first embodiment can be obtained. This is because even if the cleaning electrode is provided on the side wall as in this embodiment, it can contribute to uniform plasma density in the vicinity of the side wall.
　なお、図１３に示したプラズマ処理装置１０３では、クリーニング電極３３は主電極１５の下端より低い位置に設けられていたが、図１６、図１７に示すプラズマ処理装置１０３ｉのように、クリーニング電極３３が主電極１５の主電極横棒部分１５ｘと同じ高さとなっていてもよい。より具体的には、水平方向に延在する棒状であるクリーニング電極ブリッジ部分３３ｖが主電極１５の主電極横棒部分１５ｘと同じ高さとなっていることが好ましい。このような構成も、プラズマ分布の制御を容易にすることに寄与し得る。また、クリーニング電極３３が主電極横棒部分１５ｘと同じ高さになる程度に天板１１寄りに配置されていれば、側壁１２の開口部（図示せず）から処理対象物１３を出し入れする際にもクリーニング電極３３が出し入れの妨げとならないので、好ましい。 In the plasma processing apparatus 103 shown in FIG. 13, the cleaning electrode 33 is provided at a position lower than the lower end of the main electrode 15. However, like the plasma processing apparatus 103i shown in FIGS. May be the same height as the main electrode horizontal bar portion 15x of the main electrode 15. More specifically, it is preferable that the cleaning electrode bridge portion 33v which is a bar shape extending in the horizontal direction has the same height as the main electrode horizontal bar portion 15x of the main electrode 15. Such a configuration can also contribute to facilitating control of the plasma distribution. Further, when the cleaning electrode 33 is arranged close to the top plate 11 to the same height as the main electrode horizontal bar portion 15x, the processing object 13 is taken in and out from the opening (not shown) of the side wall 12. In addition, the cleaning electrode 33 is preferable because it does not hinder access.
　（実施の形態４）
　図１８～図２１を参照して、本発明に基づく実施の形態４におけるプラズマ処理装置の使用方法について説明する。 (Embodiment 4)
A method of using the plasma processing apparatus in the fourth embodiment based on the present invention will be described with reference to FIGS.
　本発明に基づくプラズマ処理装置の使用方法のフローチャートを図１８に示す。ここでは、実施の形態１で示したプラズマ処理装置１０１を例にとって説明する。このプラズマ処理装置の使用方法は、図１９に示すように、外周を取囲む側壁１２と上側を塞ぐ天板１１とを含むチャンバ内に処理対象物１３を配置する工程Ｓ１と、図２０に示すように、前記チャンバ内に反応ガスを供給しつつ、天板１１から下向きに突出して処理対象物１３に対向するように天板１１の中央部に配列されている複数の主電極１５に電力を供給し、かつ、上から見たときに複数の主電極１５が配列されている領域の外側に配置されたクリーニング電極３１には電力を供給しないことによって、処理対象物１３を処理する工程Ｓ２と、図２１に示すように、前記チャンバ内に前記反応ガスとは異なる種類のクリーニングガスを供給しつつ、前記複数の主電極１５およびクリーニング電極３１の両方に電力を供給することによって、前記チャンバの内面をクリーニングする工程Ｓ３とを含む。工程Ｓ３の前には処理対象物１３をチャンバ内から取り出しておくことが好ましい。 FIG. 18 shows a flowchart of a method for using the plasma processing apparatus according to the present invention. Here, the plasma processing apparatus 101 shown in Embodiment Mode 1 will be described as an example. As shown in FIG. 19, the method of using this plasma processing apparatus is shown in FIG. 20, step S1 in which a processing object 13 is placed in a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side. As described above, while supplying the reaction gas into the chamber, power is applied to the plurality of main electrodes 15 arranged in the center of the top plate 11 so as to protrude downward from the top plate 11 and face the processing target 13. Step S2 for processing the processing object 13 by supplying power and not supplying power to the cleaning electrode 31 arranged outside the region where the plurality of main electrodes 15 are arranged when viewed from above. As shown in FIG. 21, by supplying power to both the plurality of main electrodes 15 and the cleaning electrodes 31 while supplying a cleaning gas of a type different from the reaction gas into the chamber. Te, and a step S3 for cleaning the inner surface of said chamber. Prior to step S3, it is preferable to remove the processing object 13 from the chamber.
　本実施の形態では、工程Ｓ３において複数の主電極１５およびクリーニング電極３１の両方に電力を供給してチャンバの内面をクリーニングしているので、複数の主電極１５によるのみではクリーニングのためのプラズマ生成が不十分となりがちな側壁１２近傍の領域についても、クリーニング電極３１によって十分にプラズマを生成することができる。こうして、チャンバ内空間の全体にわたってきめこまかくプラズマ密度の均一化を図ることができるので、効率良くチャンバ内のクリーニングを行なうことができる。 In the present embodiment, since the inner surface of the chamber is cleaned by supplying power to both the plurality of main electrodes 15 and the cleaning electrode 31 in step S3, plasma generation for cleaning is performed only by the plurality of main electrodes 15. The cleaning electrode 31 can sufficiently generate plasma even in a region in the vicinity of the side wall 12 that tends to be insufficient. In this way, since the plasma density can be uniformly made uniform throughout the entire space in the chamber, the inside of the chamber can be efficiently cleaned.
　工程Ｓ３の前には、工程Ｓ１，Ｓ２を１回ずつ行なうだけではなく、工程Ｓ１，Ｓ２を複数回繰り返して行なってもよい。工程Ｓ１，Ｓ２を多くの回数繰り返してチャンバ内面の付着物がある程度蓄積した頃に工程Ｓ３を行なうこととしてよい。 Before step S3, not only steps S1 and S2 are performed once, but steps S1 and S2 may be repeated a plurality of times. Steps S3 and S2 may be repeated many times, and step S3 may be performed when deposits on the inner surface of the chamber accumulate to some extent.
　（実施の形態５）
　図２２、図２３を参照して、本発明に基づく実施の形態５におけるプラズマ処理装置のクリーニング方法について説明する。本発明に基づくプラズマ処理装置のクリーニング方法のフローチャートを図２２に示す。このプラズマ処理装置のクリーニング方法は、外周を取囲む側壁１２と上側を塞ぐ天板１１とを含むチャンバ内にクリーニングガスを供給し始める工程Ｓ１１と、図２３に示すように、前記チャンバ内に配置される処理対象物を処理するために設けられている主電極１５とは別に設けられ前記処理対象物を処理する際には電力が供給されないクリーニング電極３１に対して、電力を供給する工程Ｓ１２とを含む。 (Embodiment 5)
With reference to FIGS. 22 and 23, a cleaning method for a plasma processing apparatus according to the fifth embodiment of the present invention will be described. FIG. 22 shows a flowchart of the cleaning method for the plasma processing apparatus according to the present invention. This plasma processing apparatus cleaning method includes a step S11 of starting supply of a cleaning gas into a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, and is disposed in the chamber as shown in FIG. Step S12 of supplying power to the cleaning electrode 31 provided separately from the main electrode 15 provided for processing the processing target to be processed and not supplied with power when processing the processing target. including.
　本実施の形態では、工程Ｓ１２においてクリーニング電極３１に電力を供給してチャンバの内面をクリーニングしているので、複数の主電極１５によるのみではクリーニングが不足しがちな側壁１２近傍の領域についても、クリーニング電極３１によって十分にプラズマを生成してクリーニングすることができる。本実施の形態におけるプラズマ処理装置のクリーニング方法においては工程Ｓ１２においてクリーニング電極３１に電極を供給する間に複数の主電極１５に対しては電力を供給しているか否かを限定していない。工程Ｓ１２において複数の主電極１５に対しても電力を供給することによって、チャンバ内の全体にわたってなるべく均一な密度でプラズマを発生させ、クリーニングを一括して行なうこととしてよい。 In the present embodiment, power is supplied to the cleaning electrode 31 in step S12 to clean the inner surface of the chamber. Therefore, even in the region near the side wall 12 where the cleaning tends to be insufficient only with the plurality of main electrodes 15, The cleaning electrode 31 can generate a sufficient plasma for cleaning. In the cleaning method of the plasma processing apparatus according to the present embodiment, whether or not electric power is supplied to the plurality of main electrodes 15 is not limited while the electrodes are supplied to the cleaning electrode 31 in step S12. By supplying electric power to the plurality of main electrodes 15 in step S12, plasma may be generated at a density as uniform as possible throughout the chamber, and cleaning may be performed collectively.
　なお、実施の形態４，５では、実施の形態１で示したプラズマ処理装置１０１を例示して説明したが、他の実施の形態のプラズマ処理装置を用いてもよい。 In the fourth and fifth embodiments, the plasma processing apparatus 101 shown in the first embodiment has been described as an example, but a plasma processing apparatus of another embodiment may be used.
　（実施の形態６）
　本発明に基づく実施の形態６におけるプラズマ処理装置について説明する。本実施の形態におけるプラズマ処理装置は、外観上は、上記各実施の形態において図示した構成と同じである。すなわち、このプラズマ処理装置は、外周を取囲む側壁１２と上側を塞ぐ天板１１とを含むチャンバと、前記チャンバ内に処理対象物１３を配置するためのステージ１４と、天板１１から下向きに突出して処理対象物１３に対向するように天板１１の中央部に配列されている複数の主電極１５と、上から見たときに複数の主電極１５が配列されている領域の外側となるように配置されているクリーニング電極とを備える。本実施の形態におけるプラズマ処理装置を実現する場合、上記各実施の形態で説明した構成を採用してもよい。 (Embodiment 6)
The plasma processing apparatus in Embodiment 6 based on this invention is demonstrated. The plasma processing apparatus in the present embodiment has the same appearance as that shown in each of the above embodiments. That is, the plasma processing apparatus includes a chamber including a side wall 12 that surrounds the outer periphery and a top plate 11 that closes the upper side, a stage 14 for disposing a processing target 13 in the chamber, and a downward direction from the top plate 11. A plurality of main electrodes 15 arranged in the center of the top plate 11 so as to protrude and face the object to be processed 13, and when viewed from above, are outside the region where the plurality of main electrodes 15 are arranged. And a cleaning electrode arranged as described above. When realizing the plasma processing apparatus in this embodiment, the configuration described in each of the above embodiments may be employed.
　この構成であれば、チャンバ内空間の周縁部すなわち側壁近傍の領域についても、クリーニング電極によってプラズマを十分に生成することができるので、チャンバの内面をクリーニングする際にチャンバ内空間の全体にわたってきめこまかくプラズマ密度の均一化を図ることができ、効率良くクリーニングを行なうことができる。このプラズマ処理装置においては、クリーニング電極は、チャンバの内面をクリーニングする際には電力が供給されることが好ましい。 With this configuration, the plasma can be sufficiently generated by the cleaning electrode even in the peripheral portion of the inner space of the chamber, that is, in the vicinity of the side wall. Therefore, when the inner surface of the chamber is cleaned, the entire inner space of the chamber is finely divided. The density can be made uniform and cleaning can be performed efficiently. In this plasma processing apparatus, the cleaning electrode is preferably supplied with electric power when cleaning the inner surface of the chamber.
　なお、今回開示した上記実施の形態はすべての点で例示であって制限的なものではない。本発明の範囲は上記した説明ではなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更を含むものである。 It should be noted that the above-described embodiment disclosed herein is illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　本発明は、プラズマ処理装置、その使用方法およびプラズマ処理装置のクリーニング方法に利用することができる。 The present invention can be used for a plasma processing apparatus, a method for using the same, and a cleaning method for the plasma processing apparatus.
　８，１８　ＲＦ電源、９，１９　マッチングネットワーク、１０　プラズマ、１１　天板、１２　側壁、１３　処理対象物、１４　ステージ、１５　主電極、２１　絶縁部材、３１，３１ａ，３１ｂ，３１ｃ，３２，３３　クリーニング電極、３１ｖ，３３ｖ　クリーニング電極ブリッジ部分、３３ｘ　クリーニング電極横棒部分、３１ｙ　クリーニング電極縦棒部分、１０１，１０２，１０３　プラズマ処理装置。 8,18 RF power supply, 9,19 matching network, 10 plasma, 11 top plate, 12 side walls, 13 processing object, 14 stage, 15 main electrode, 21 insulating member, 31, 31a, 31b, 31c, 32, 33 cleaning Electrode, 31v, 33v cleaning electrode bridge part, 33x cleaning electrode horizontal bar part, 31y cleaning electrode vertical bar part, 101, 102, 103 plasma processing apparatus.

Claims (14)

  1. 　外周を取囲む側壁（１２）と上側を塞ぐ天板（１１）とを含むチャンバと、
    　前記チャンバ内に処理対象物（１３）を配置するためのステージ（１４）と、
    　前記天板から下向きに突出して前記処理対象物に対向するように前記天板の中央部に配列されている複数の主電極（１５）と、
    　上から見たときに前記複数の主電極が配列されている領域の外側となるように配置され、前記処理対象物をプラズマ処理する際には電力が供給されず、前記チャンバの内面をクリーニングする際には電力が供給される、クリーニング電極（３１，３１ａ，３１ｂ，３１ｃ，３２，３３）とを備える、プラズマ処理装置。     A chamber including a side wall (12) surrounding the outer periphery and a top plate (11) closing the upper side;
    A stage (14) for disposing a processing object (13) in the chamber;
    A plurality of main electrodes (15) arranged in the center of the top plate so as to protrude downward from the top plate and face the object to be processed;
    When viewed from above, the plurality of main electrodes are arranged so as to be outside the region where the plurality of main electrodes are arranged. When plasma processing is performed on the object to be processed, power is not supplied, and the inner surface of the chamber is cleaned. A plasma processing apparatus comprising cleaning electrodes (31, 31a, 31b, 31c, 32, 33) to which electric power is supplied.
  2. 　前記クリーニング電極は、前記天板に設けられている、請求の範囲第１項に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1, wherein the cleaning electrode is provided on the top plate.
  3. 　前記クリーニング電極は、前記側壁に設けられている、請求の範囲第１項に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1, wherein the cleaning electrode is provided on the side wall.
  4. 　前記クリーニング電極は、前記側壁の全周に沿うように配置されている、請求の範囲第１項から第３項のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 3, wherein the cleaning electrode is disposed along the entire circumference of the side wall.
  5. 　上から見たときに前記複数の主電極が配列されている領域の外側となるように配置され、前記処理対象物をプラズマ処理する際には電力が供給されず、前記チャンバの内面をクリーニングする際には電力が供給される、複数のクリーニング電極（３１，３１ａ，３１ｂ，３１ｃ，３２，３３）を備える、請求の範囲第１項から第３項のいずれかに記載のプラズマ処理装置。 When viewed from above, the plurality of main electrodes are arranged so as to be outside the region where the plurality of main electrodes are arranged. When plasma processing is performed on the object to be processed, power is not supplied, and the inner surface of the chamber is cleaned. The plasma processing apparatus according to any one of claims 1 to 3, further comprising a plurality of cleaning electrodes (31, 31a, 31b, 31c, 32, 33) to which electric power is supplied.
  6. 　前記複数のクリーニング電極は、前記側壁の全周に沿うように配列されている、請求の範囲第５項に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 5, wherein the plurality of cleaning electrodes are arranged along the entire circumference of the side wall.
  7. 　前記主電極は上から見てマトリクス状に配列されている、請求の範囲第１項から第６項のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 6, wherein the main electrodes are arranged in a matrix when viewed from above.
  8. 　前記クリーニング電極は、マトリクス状に配列された前記複数の主電極のうちの１つの列の延長上に配置されている、請求の範囲第７項に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 7, wherein the cleaning electrode is disposed on an extension of one row of the plurality of main electrodes arranged in a matrix.
  9. 　前記クリーニング電極と前記複数の主電極とはいずれも横棒部分を有し、前記横棒部分の高さ同士が等しくなっている、請求の範囲第１項から第８項のいずれかに記載のプラズマ処理装置。 The cleaning electrode and the plurality of main electrodes each have a horizontal bar portion, and the heights of the horizontal bar portions are equal to each other, according to any one of claims 1 to 8. Plasma processing equipment.
  10. 　前記複数の主電極と前記クリーニング電極とは別々の制御装置によって制御されている、請求の範囲第１項から第９項のいずれかに記載のプラズマ処理装置。 The plasma processing apparatus according to any one of claims 1 to 9, wherein the plurality of main electrodes and the cleaning electrode are controlled by separate control devices.
  11. 　外周を取囲む側壁（１２）と上側を塞ぐ天板（１１）とを含むチャンバ内に処理対象物（１３）を配置する工程と、
    　前記チャンバ内に反応ガスを供給しつつ、前記天板から下向きに突出して前記処理対象物に対向するように前記天板の中央部に配列されている複数の主電極（１５）に電力を供給し、かつ、上から見たときに前記複数の主電極が配列されている領域の外側に配置されたクリーニング電極には電力を供給しないことによって、前記処理対象物を処理する工程と、
    　前記チャンバ内に前記反応ガスとは異なる種類のクリーニングガスを供給しつつ、前記複数の主電極および前記クリーニング電極の両方に電力を供給することによって、前記チャンバの内面をクリーニングする工程とを含む、プラズマ処理装置の使用方法。     Disposing a processing object (13) in a chamber including a side wall (12) surrounding the outer periphery and a top plate (11) closing the upper side;
    While supplying the reaction gas into the chamber, power is supplied to the plurality of main electrodes (15) arranged in the center of the top plate so as to protrude downward from the top plate and face the object to be processed. And, when viewed from above, the step of processing the object to be processed by not supplying electric power to the cleaning electrode disposed outside the region where the plurality of main electrodes are arranged, and
    Cleaning the inner surface of the chamber by supplying power to both the plurality of main electrodes and the cleaning electrode while supplying a cleaning gas of a type different from the reaction gas into the chamber. How to use a plasma processing apparatus.
  12. 　外周を取囲む側壁（１２）と上側を塞ぐ天板（１１）とを含むチャンバ内にクリーニングガスを供給し始める工程と、
    　前記チャンバ内に配置される処理対象物（１３）を処理するために設けられている主電極（１５）とは別に設けられ前記処理対象物を処理する際には電力が供給されないクリーニング電極に対して、電力を供給する工程とを含む、プラズマ処理装置のクリーニング方法。     Starting to supply cleaning gas into a chamber including a side wall (12) surrounding the outer periphery and a top plate (11) covering the upper side;
    A cleaning electrode that is provided separately from the main electrode (15) provided for processing the processing object (13) disposed in the chamber and is not supplied with power when processing the processing object. And a step of supplying electric power.
  13. 　外周を取囲む側壁（１２）と上側を塞ぐ天板（１１）とを含むチャンバと、
    　前記チャンバ内に処理対象物（１３）を配置するためのステージ（１４）と、
    　前記天板から下向きに突出して前記処理対象物に対向するように前記天板の中央部に配列されている複数の主電極（１５）と、
    　上から見たときに前記複数の主電極が配列されている領域の外側となるように配置されているクリーニング電極とを備える、プラズマ処理装置。     A chamber including a side wall (12) surrounding the outer periphery and a top plate (11) closing the upper side;
    A stage (14) for disposing a processing object (13) in the chamber;
    A plurality of main electrodes (15) arranged in the center of the top plate so as to protrude downward from the top plate and face the object to be processed;
    A plasma processing apparatus, comprising: a cleaning electrode disposed so as to be outside a region where the plurality of main electrodes are arranged when viewed from above.
  14. 　前記クリーニング電極は、前記チャンバの内面をクリーニングする際には電力が供給される、請求の範囲第１３項に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 13, wherein the cleaning electrode is supplied with electric power when cleaning the inner surface of the chamber.
PCT/JP2010/060197 2009-07-28 2010-06-16 Plasma processing apparatus, method for using plasma processing apparatus, and method for cleaning plasma processing apparatus WO2011013458A1 (en)

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