WO2011008015A3 - Wafer-dicing method - Google Patents

Wafer-dicing method Download PDF

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Publication number
WO2011008015A3
WO2011008015A3 PCT/KR2010/004562 KR2010004562W WO2011008015A3 WO 2011008015 A3 WO2011008015 A3 WO 2011008015A3 KR 2010004562 W KR2010004562 W KR 2010004562W WO 2011008015 A3 WO2011008015 A3 WO 2011008015A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
cutting guide
dicing tape
cracking
semiconductor dies
Prior art date
Application number
PCT/KR2010/004562
Other languages
French (fr)
Korean (ko)
Other versions
WO2011008015A2 (en
Inventor
신동혁
이길영
Original Assignee
주식회사 인아텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 인아텍 filed Critical 주식회사 인아텍
Publication of WO2011008015A2 publication Critical patent/WO2011008015A2/en
Publication of WO2011008015A3 publication Critical patent/WO2011008015A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

The present invention relates to a wafer-dicing method for separating a wafer into a plurality of semiconductor dies, comprising: a step of forming a cutting guide groove, involving irradiating femtosecond pulse laser beams, having a pulse duration of 1 picosecond or less, onto the wafer attached to a stretchable dicing tape to form cutting guide grooves into a predetermined pattern on one surface of the wafer; a cracking step of cracking the wafer from ends of the cutting guide grooves toward the other surface of the wafer; and a dicing tape stretching step of stretching the dicing tape to separate the plurality of semiconductor dies from each other.
PCT/KR2010/004562 2009-07-15 2010-07-14 Wafer-dicing method WO2011008015A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0064280 2009-07-15
KR1020090064280A KR100934012B1 (en) 2009-07-15 2009-07-15 Wafer dicing method

Publications (2)

Publication Number Publication Date
WO2011008015A2 WO2011008015A2 (en) 2011-01-20
WO2011008015A3 true WO2011008015A3 (en) 2011-04-21

Family

ID=41684764

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004562 WO2011008015A2 (en) 2009-07-15 2010-07-14 Wafer-dicing method

Country Status (2)

Country Link
KR (1) KR100934012B1 (en)
WO (1) WO2011008015A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101207583B1 (en) * 2010-10-15 2012-12-04 한국과학기술원 Laser processing method and apparatus using ultrasonic wave
CN103341692A (en) * 2013-06-26 2013-10-09 京东方科技集团股份有限公司 Method for cutting irregular figure substrate and display device
JP6223804B2 (en) * 2013-12-09 2017-11-01 株式会社ディスコ Wafer processing equipment
KR102176416B1 (en) 2019-04-24 2020-11-10 스카이다이아몬드 주식회사 Method for dicing of phosphor thin sheet

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304066A (en) * 2003-03-31 2004-10-28 Renesas Technology Corp Method of manufacturing semiconductor device
JP2005243977A (en) * 2004-02-27 2005-09-08 Canon Inc Substrate dividing method
JP2005268752A (en) * 2004-02-19 2005-09-29 Canon Inc Method of laser cutting, workpiece and semiconductor-element chip
JP2008006492A (en) * 2006-06-30 2008-01-17 Disco Abrasive Syst Ltd Processing method of sapphire substrate
JP2008098465A (en) * 2006-10-13 2008-04-24 Aisin Seiki Co Ltd Method for separating semiconductor light-emitting element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4508217B2 (en) * 2007-06-27 2010-07-21 株式会社ナビタイムジャパン Navigation system, route search server, route search method, and terminal device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304066A (en) * 2003-03-31 2004-10-28 Renesas Technology Corp Method of manufacturing semiconductor device
JP2005268752A (en) * 2004-02-19 2005-09-29 Canon Inc Method of laser cutting, workpiece and semiconductor-element chip
JP2005243977A (en) * 2004-02-27 2005-09-08 Canon Inc Substrate dividing method
JP2008006492A (en) * 2006-06-30 2008-01-17 Disco Abrasive Syst Ltd Processing method of sapphire substrate
JP2008098465A (en) * 2006-10-13 2008-04-24 Aisin Seiki Co Ltd Method for separating semiconductor light-emitting element

Also Published As

Publication number Publication date
KR100934012B1 (en) 2009-12-28
WO2011008015A2 (en) 2011-01-20

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