WO2010085949A2 - Substrate carrier for mounting substrates - Google Patents

Substrate carrier for mounting substrates Download PDF

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Publication number
WO2010085949A2
WO2010085949A2 PCT/DE2010/000138 DE2010000138W WO2010085949A2 WO 2010085949 A2 WO2010085949 A2 WO 2010085949A2 DE 2010000138 W DE2010000138 W DE 2010000138W WO 2010085949 A2 WO2010085949 A2 WO 2010085949A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
support frame
substrate holder
substrate carrier
cfc
Prior art date
Application number
PCT/DE2010/000138
Other languages
German (de)
French (fr)
Other versions
WO2010085949A3 (en
Inventor
Mario Prüstel
Stefan Schubert
Hermann Schlemm
Matthias Uhlig
André LUX
Daniel Decker
Silvia Krautwald
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Priority to CN201080006252.5A priority Critical patent/CN102859678A/en
Publication of WO2010085949A2 publication Critical patent/WO2010085949A2/en
Publication of WO2010085949A3 publication Critical patent/WO2010085949A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • H01L21/67336—Trays for chips characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67363—Closed carriers specially adapted for containing substrates other than wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67383—Closed carriers characterised by substrate supports

Definitions

  • Substrate carrier for holding substrates
  • the invention relates to a substrate carrier for holding a substrate or a plurality of substrates, in particular solar cell wafers, during transport and during the course of individual process steps in process chambers with coating and / or etching processes.
  • the respective process in addition to the surfaces of a substrate on which the respective process is intended to act in a concrete manner in a technologically intended manner, generally acts on all surfaces within the process chamber.
  • it is attempted to arrange the substrate and device arrangement within the process chamber such that the respective process acts at least predominantly on the concrete substrate surfaces.
  • a simple means, which is widely used in practice, is the covering of the device components which are not to be coated, eg with aluminum foil. But this is always only a relatively coarse cover, which does not cover the areas in the immediate vicinity of the substrates on the substrate holders.
  • substrate holders are constantly exposed to the often aggressive process parameters, which can lead to rapid wear or unusability.
  • Relatively high temperatures lead to stresses and deformations of the substrate holder and reactive processes lead to undesired changes on the surface of the substrate holders.
  • Due to heat dissipation, the relatively high thermal masses of the substrate holders also often lead to unfavorable temperature profiles of the individual solar cell wafers, which are arranged as substrates on the substrate carrier, which can lead to quality losses.
  • No. 6,227,372 B1 specifies a component carrier for accommodating electrical components, which consists of a support frame with a frame structure in such a way that openings are formed in which inserts for receiving the components can be inserted.
  • the inserts are made of semicrystalline polymer, which is not suitable for high temperature processes.
  • US 2006/0006095 A1 describes a universally usable substrate holder for the storage, treatment and transport of a large number of electronic components.
  • the substrate holder has an adjustable side wall opposite a fixed side wall.
  • the adjustable sidewall defines a predetermined opening of the substrate holder.
  • the substrate carrier consists of a support frame and at least one substrate holder.
  • the support frame consists of a self-supporting and rigid frame structure with angularly arranged to each other longitudinal and transverse webs of a stable up to 800 0 C dimensionally stable material.
  • the substrate receptacle rests on the support frame and is designed in the manner of a plate in such a way that the substrates can be positioned on the upper side of the substrate receptacle. Between the support frame and the substrate holder there are thermal insulation elements.
  • the concrete structure of the longitudinal and transverse webs and other structurally provided elements, eg Outer bars, can vary in a wide range. Decisive is the achievement of sufficient stability and flexural rigidity even at higher process temperatures.
  • the support frame should preferably have a low thermal mass.
  • the individual elements of the support frame, the longitudinal and transverse webs and the other constructively provided elements can be arranged in an advantageous manner by means of pins and associated recesses positioned to each other. To secure the geometric arrangement screwed or technically similar locking the frame structure are also advantageous.
  • the inventively designed as a thin plate substrate receptacle rests on the support frame, i. It is formed so thin to foil-like that it bends between the support points only in a process-technologically permissible range.
  • the substrate or the plurality of substrates can be positioned. This can be done in such a way that in the substrate receiving suitable recesses for receiving the e.g. between 0.1 to 0.6 mm thick solar cell wafer are introduced. Suitable positioning aids or stops such as pins or strips for positioning the substrates or solar cell wafers can also be provided on the substrate holder.
  • thermal insulating elements between the support frame and the substrate receiving known pin-like ceramic elements may be introduced in the support frame, for example, ensure that between the support frame and the Substratauf- would take place as good as possible thermal decoupling.
  • the solution according to the invention enables secure and stable mounting of the substrates during transport and during the course of the individual process steps. Especially in thermal processes, short process times can be guaranteed.
  • the solar cell wafers can be heated very quickly to the required process temperatures and the temperature profile of the individual solar cell wafer is very homogeneous, since the thin plate and the support frame with their correspondingly low thermal masses have no or only a very small thermal influence.
  • the thin plate as a substrate receptacle so large that the support frame opposite the heating sources is not exposed to any direct heat radiation.
  • separate additional covers can be provided next to the substrate receptacle and above and / or below the support frame.
  • CFC carbon fiber rein- forced carbon
  • composite materials produced therefrom can be used as the process-stable material for the elements of the support frame and the substrate holder.
  • the material should be resistant and easy to clean to the specific coating and etching processes used, as well as the process temperatures.
  • the substrate carriers are generally formed such that the substrates are subjected to a treatment process only from above. If necessary, also the bottom of the substrate or solar cell wafer one
  • the thin plate have at least one opening in the region of the substrate relative to the underlying support frame. Through the support frame and the opening through the bottom of the substrate can then be at least partially treated.
  • the substrate holder can advantageously be adapted to the specific substrates, while the substrate carrier can be used unchanged for all substrate holders. Due to the specific plate-like and thus thin design of the substrate holder, this adapts very quickly to the given thermal conditions, while the mass-intensive support frame thermally decoupled from the substrate holder is protected under the substrate holder and reacts relatively slowly to temperature changes. On this basis, the thermal influence of the substrates by the support frame and the substrate holder is negligible.
  • the substrate carrier according to the invention can be used concretely both for batch systems and continuous-flow systems for the treatment and / or coating of solar cell wafers as well as for all other flat or suitable flat substrates. Particularly advantageous is the use in the application of relatively high process temperatures and / or reactive atmospheres.
  • FIG. 1 shows a perspective view of a substrate carrier for the enclosure of 25 solar cell wafers.
  • FIG. 2 shows the trachea without substrate receiving.
  • the substrate carrier according to the embodiment is shown in Figure 1 in a perspective view from above.
  • the substrate carrier essentially consists of a lower support frame 1 and a substrate holder 2 resting thereon.
  • 5 ⁇ 5 recesses in the form of openings 3 with lateral supports 4 for holding rectangular 156 ⁇ 156 mm solar cell wafers 5 are included in the substrate receptacle 2 a size of 158 x 158 mm incorporated.
  • a solar cell wafer 5 is inserted only in the lower opening 3.
  • the plate-shaped substrate holder 2 has a thickness of 1.2 mm and the supports 4 are lowered relative to the top of the substrate holder 2 by 0.5 mm, so that the solar cell wafer 5 with a thickness of 0.5 mm is securely positioned in the opening 2 ,
  • the substrate holder 2 covers the support frame 1 in its entirety so that it is shielded from above arranged heating sources. If necessary, the lateral areas of the support frame 1 can still be protected with additional covers from heat radiation.
  • the support frame 1 is shown without substrate receptacle 2, so that the self-supporting and rigid frame structure with angle to each other arranged longitudinal tegen 6 and transverse webs 7 is visible.
  • the support frame 1 to achieve a self-supporting rigid and also low-mass construction further constructive elements. These include in the longitudinal direction as guide rails formed outer webs 8. All elements of the support frame 1 are positioned in a known manner by means not shown sockets, in particular by means of pins and associated recesses to each other and connected. Essential to the invention are evenly distributed over the entire surface of the support frame 1 'thermal insulation provided 9, on which the plate-shaped substrate holder 2 rests. For positioning the substrate Aufnähme 2 on the support frame 1 positioning pins 10 are provided on the support frame 1, which engage in associated holes 11 in the substrate holder 2.
  • the concrete design can be easily adapted to specific and local conditions.
  • the elements of the support frame 1 are made of a CFC composite material and the substrate holder 2 is made of a carbon composite material, which is dimensionally stable at least up to 800 0 C.
  • the thermal insulation elements 9 are made of graphite pins.
  • the carbon composite is made from 100% fiber-reinforced carbon (CFC). Carbon or graphite fibers of only a few microns in diameter are admixed to a matrix of pure carbon. This material has a high mechanical stability, as the matrix out
  • the openings 3 in the substrate receptacle 2 are open by way of example downwards, thereby it is also possible the lower side of the solar cell wafer 5, taking off the surfaces with which the solar cell wafer 5 rest on the lateral supports 4, from below through the support frame 1 therethrough Exposure to coating and etching processes. Insofar as this is not necessary, the openings 3 in the substrate receptacle 2 can also be closed downwards, ie the supports 4 are replaced by a lowered surface.

Abstract

The invention relates to a substrate carrier for mounting substrates, comprising a carrying frame (1) and at least one substrate receptacle (2). The carrying frame (1) has a self-supporting and flexurally rigid frame structure made of longitudinal ribs (6) and transverse ribs (7), which are disposed at an angle to each other and made of a material that is dimensionally stable up to 800ºC. The substrate receptacle (2) rests on the carrying frame (1) and has a plate-like design such that the solar cell wafers (5) can be positioned on the upper side of the substrate receptacle (2). Thermally insulating elements (9) are present between the carrying frame (1) and the substrate receptacle (2). The elements of the carrying frame (1) and the substrate receptacle (2) are made of steel, titanium, aluminum, ceramic, CFC (CFC = carbon fiber reinforced carbon) or composites made thereof.

Description

Substratträger zur Halterung von SubstratenSubstrate carrier for holding substrates
Beschreibungdescription
Die Erfindung betrifft einen Substratträger zur Halterung eines Substrates oder einer Vielzahl von Substraten, ins- besondere Solarzellenwafern, während des Transportes und während des Ablaufes einzelner Prozessschritte in Prozess- kaπimern mit Beschichtungs- und/oder Ätzprozessen.The invention relates to a substrate carrier for holding a substrate or a plurality of substrates, in particular solar cell wafers, during transport and during the course of individual process steps in process chambers with coating and / or etching processes.
Stand der TechnikState of the art
Bei der Behandlung von Substraten mit Beschichtungs- und/oder Ätzprozessen ist es erforderlich, spezifischeWhen treating substrates with coating and / or etching processes, it is necessary to have specific ones
Temperaturen und Drücke von konkreten Atmosphären einzustellen. Dabei wirkt der jeweilige Prozess, neben den Oberflächen eines Substrates auf denen der jeweilige Prozess in technologisch vorgesehener Weise konkret einwirken soll, in der Regel auf alle Oberflächen innerhalb der Prozesskammer. Nach dem Stand der Technik wird versucht, die Substrat- und Geräteanordnung innerhalb der Prozesskammer derart anzuordnen, dass der jeweilige Prozess zumindest überwiegend auf die konkreten Substratoberflächen ein- wirkt. Ein einfaches Mittel, welches in der Praxis vielfach angewandt wird, ist die Abdeckung der Gerätebauteile, die nicht beschichtet werden sollen, z.B. mit Aluminiumfolie. Das ist aber immer nur eine relativ grobe Abdeckung, welche die Flächen in unmittelbarer Umgebung der Substrate an den Substrathalterungen nicht erfasst. Insbesondere bei Prozessen mit hohen Taktfrequenzen und wiederholter Nutzung der Substrathalterung bei einer Vielzahl von Durchläufen werden die Substrathalterungen ständig den oft aggressiven Prozessparametern ausgesetzt, was zu einem schnellen Verschleiß bzw. zur Unbrauchbarkeit führen kann. Relativ hohe Temperaturen führen zu Verspannungen und Deformierungen der Substrathalter und reaktive Prozesse führen zu unerwünschten Veränderungen an der Oberfläche der Substrathalterungen. Die relativ hohen thermischen Massen der Substrathalter führen auf Grund von Wärmeableitung auch oft zu ungünstigen Temperaturprofilen der einzelnen Solarzellenwafer, die als Substrate auf dem Substratträger angeordnet sind, wodurch es zu Qualitätsverlusten kommen kann.Set temperatures and pressures of specific atmospheres. In this case, the respective process, in addition to the surfaces of a substrate on which the respective process is intended to act in a concrete manner in a technologically intended manner, generally acts on all surfaces within the process chamber. According to the prior art, it is attempted to arrange the substrate and device arrangement within the process chamber such that the respective process acts at least predominantly on the concrete substrate surfaces. A simple means, which is widely used in practice, is the covering of the device components which are not to be coated, eg with aluminum foil. But this is always only a relatively coarse cover, which does not cover the areas in the immediate vicinity of the substrates on the substrate holders. In particular, in processes with high clock frequencies and repeated use of the substrate holder in a variety of runs substrate holders are constantly exposed to the often aggressive process parameters, which can lead to rapid wear or unusability. Relatively high temperatures lead to stresses and deformations of the substrate holder and reactive processes lead to undesired changes on the surface of the substrate holders. Due to heat dissipation, the relatively high thermal masses of the substrate holders also often lead to unfavorable temperature profiles of the individual solar cell wafers, which are arranged as substrates on the substrate carrier, which can lead to quality losses.
Die US 6,227,372 Bl gibt einen Komponententräger zur Aufnahme elektrischer Komponenten an, der aus einem Tragrahmen mit einer Rahmenstruktur besteht, derart dass Öffnungen gebildet werden, in die Einsätze zur Aufnahme der Komponenten eingesetzt werden können. Die Einsätze bestehen aus halbkristallinen Polymer, welches für Hochtemperaturprozesse nicht geeignet ist.No. 6,227,372 B1 specifies a component carrier for accommodating electrical components, which consists of a support frame with a frame structure in such a way that openings are formed in which inserts for receiving the components can be inserted. The inserts are made of semicrystalline polymer, which is not suitable for high temperature processes.
Die US 2006/0006095 Al beschreibt eine universell einsetzbare Substrathalterung zur Lagerung, Behandlung und zum Transport einer Vielzahl von elektronischen Komponenten. Die Substrathalterung weist gegenüber einer festen Seitenwand eine justierbare Seitenwand auf. Die justierbare Seitenwand definiert eine vorbestimmte Öffnung der Substrathalterung. AufgabenstellungUS 2006/0006095 A1 describes a universally usable substrate holder for the storage, treatment and transport of a large number of electronic components. The substrate holder has an adjustable side wall opposite a fixed side wall. The adjustable sidewall defines a predetermined opening of the substrate holder. task
Der Erfindung liegt als Aufgabe zugrunde, einen Substratträger zur Halterung eines Substrates oder einer Vielzahl von Substraten, insbesondere von Solarzellenwafern, an- zugeben, der beim Einsatz zur Behandlung der Substrate in Beschichtungs- und/oder Ätzprozessen mit aggressiven Medien und/oder bei hohen Temperaturen eine hohe Stabilität und Standzeit aufweist. Weiterhin soll der Substratträger gegenüber dem Substrat möglichst keine thermischen Ein- flüsse ausüben.It is an object of the invention to specify a substrate carrier for holding a substrate or a multiplicity of substrates, in particular solar cell wafers, which is used when treating the substrates in coating and / or etching processes with aggressive media and / or at high temperatures has a high stability and durability. Furthermore, the substrate carrier should exert as little thermal influence as possible with respect to the substrate.
Die Erfindung löst die Aufgabe durch die im Anspruch 1 angegebenen Merkmale. Vorteilhafte Weiterbildungen der Erfindung sind in den ünteransprüchen gekennzeichnet und werden nachstehend zusammen mit der Beschreibung der be- vorzugten Ausführung der Erfindung, einschließlich der Zeichnung, näher dargestellt.The invention achieves the object by the features specified in claim 1. Advantageous developments of the invention are characterized in the dependent claims and are described in more detail below together with the description of the preferred embodiment of the invention, including the drawing.
Erfindungsgemäß besteht der Substratträger aus einem Tragrahmen und mindestens einer Substrataufnahme. Der Tragrahmen besteht aus einer selbsttragenden und biegesteifen Rahmenstruktur mit winklig zueinander angeordneten Längsund Querstegen aus einem bis 8000C formstabilen Material. Bei der Anwendung höherer Prozesstemperaturen kann es erforderlich sein, Materialien einzusetzen, die auch bei entsprechend höhere Temperaturen eine ausreichende Forms- tabilität aufweisen. Die Substrataufnahme liegt auf dem Tragrahmen auf und ist plattenartig derart ausgebildet, dass die Substrate auf der Oberseite der Substrataufnahme positioniert werden können. Zwischen dem Tragrahmen und der Substrataufnahme sind thermische Isolierelemente vor- handen. Die konkrete Struktur der Längs- und Querstege sowie weiterer konstruktiv vorgesehener Elemente, z.B. Außenstege, kann in einem weiten Bereich variieren. Ausschlaggebend ist die Erzielung einer ausreichenden Stabilität und Biegesteifigkeit auch bei höheren Prozesstemperaturen. Dabei soll der Tragrahmen möglichst eine geringe thermische Masse aufweisen.According to the invention, the substrate carrier consists of a support frame and at least one substrate holder. The support frame consists of a self-supporting and rigid frame structure with angularly arranged to each other longitudinal and transverse webs of a stable up to 800 0 C dimensionally stable material. When using higher process temperatures, it may be necessary to use materials which have sufficient dimensional stability even at correspondingly higher temperatures. The substrate receptacle rests on the support frame and is designed in the manner of a plate in such a way that the substrates can be positioned on the upper side of the substrate receptacle. Between the support frame and the substrate holder there are thermal insulation elements. The concrete structure of the longitudinal and transverse webs and other structurally provided elements, eg Outer bars, can vary in a wide range. Decisive is the achievement of sufficient stability and flexural rigidity even at higher process temperatures. In this case, the support frame should preferably have a low thermal mass.
Die einzelnen Elemente des Tragrahmens, die Längs- und Querstege sowie die weiteren konstruktiv vorgesehener Elemente können in vorteilhafter Weise mittels Zapfen und zugeordneten Ausnehmungen zueinander positioniert angeord- net sein. Zur Sicherung der geometrischen Anordnung sind zusätzlich Verschraubungen oder technisch ähnliche Arretierungen der Rahmenstruktur vorteilhaft.The individual elements of the support frame, the longitudinal and transverse webs and the other constructively provided elements can be arranged in an advantageous manner by means of pins and associated recesses positioned to each other. To secure the geometric arrangement screwed or technically similar locking the frame structure are also advantageous.
Die erfindungsgemäß als dünne Platte ausgebildete Substrataufnahme liegt auf dem Tragrahmen auf, d.h. sie wird derart dünn bis folienartig ausgebildet, dass sie sich zwischen den Auflagepunkten nur in einem prozesstechnologisch zulässigen Bereich durchbiegt. Auf der Oberseite der dünnen Platte kann das Substrat oder können die Vielzahl von Substraten positioniert werden. Das kann derart erfol- gen, dass in der Substrataufnahme geeignete Ausnehmungen zur Aufnahme der z.B. zwischen 0,1 bis 0,6 mm dicken Solarzellenwafer eingebracht sind. Auf der Substrataufnahme können auch geeignete Positionierhilfen oder Anschläge wie Stifte oder Leisten zur Positionierung der Substrate bzw. Solarzellenwafer vorgesehen sein.The inventively designed as a thin plate substrate receptacle rests on the support frame, i. It is formed so thin to foil-like that it bends between the support points only in a process-technologically permissible range. On top of the thin plate, the substrate or the plurality of substrates can be positioned. This can be done in such a way that in the substrate receiving suitable recesses for receiving the e.g. between 0.1 to 0.6 mm thick solar cell wafer are introduced. Suitable positioning aids or stops such as pins or strips for positioning the substrates or solar cell wafers can also be provided on the substrate holder.
Als thermische Isolierelemente zwischen dem Tragrahmen und der Substrataufnahme können z.B. bekannte stiftartige Keramikelemente im Tragrahmen eingebracht sein, die gewährleisten, dass zwischen dem Tragrahmen und der Substratauf- nähme eine möglichst gute thermische Entkopplung erfolgt. Die erfindungsgemäße Lösung ermöglicht eine sichere und stabile Halterung der Substrate während des Transportes und während des Ablaufes der einzelnen Prozessschritte. Insbesondere bei thermischen Prozessen können kurze Pro- zesszeiten gewährleistet werden. Die Solarzellenwafer können sehr schnell auf die erforderlichen Prozesstemperaturen aufgeheizt werden und das Temperaturprofil des einzelnen Solarzellenwafer ist sehr homogen, da die dünne Platte und der Tragrahmen mit ihren entsprechend geringen thermische Massen keine oder nur einen sehr geringen thermischen Einfluss haben.As a thermal insulating elements between the support frame and the substrate receiving known pin-like ceramic elements may be introduced in the support frame, for example, ensure that between the support frame and the Substratauf- would take place as good as possible thermal decoupling. The solution according to the invention enables secure and stable mounting of the substrates during transport and during the course of the individual process steps. Especially in thermal processes, short process times can be guaranteed. The solar cell wafers can be heated very quickly to the required process temperatures and the temperature profile of the individual solar cell wafer is very homogeneous, since the thin plate and the support frame with their correspondingly low thermal masses have no or only a very small thermal influence.
Vorteilhaft ist es, die dünne Platte als Substrataufnahme derart groß auszubilden, dass der gegenüber den Heizquellen darunter liegende Tragrahmen keiner direkten Wärme- Strahlung ausgesetzt ist. Zu diesem Zweck können auch gesonderte zusätzliche Abdeckungen neben der Substrataufnahme sowie über und/oder unter dem Tragrahmen vorgesehen sein.It is advantageous to design the thin plate as a substrate receptacle so large that the support frame opposite the heating sources is not exposed to any direct heat radiation. For this purpose, separate additional covers can be provided next to the substrate receptacle and above and / or below the support frame.
Als prozessstabiles Material für die Elemente des Tragrah- mens sowie die Substrataufnahme kann Stahl, Titan, gegebenenfalls Aluminium, Keramik, CFC (CFC = Carbon Fiber rein- forced Carbon) oder daraus hergestellte Verbundwerkstoffe eingesetzt werden. Das Material sollte gegenüber den spezifisch angewandten Beschichtungs- und Ätzprozessen sowie den prozesstechnischen Temperaturen widerstandsfähig und leicht zu reinigen sein.Steel, titanium, optionally aluminum, ceramic, CFC (CFC = carbon fiber rein- forced carbon) or composite materials produced therefrom can be used as the process-stable material for the elements of the support frame and the substrate holder. The material should be resistant and easy to clean to the specific coating and etching processes used, as well as the process temperatures.
Die Substratträger werden allgemein derart ausgebildet, dass die Substrate nur von oben einem Behandlungsprozess unterzogen werden. Soweit es erforderlich ist, auch die Unterseite des Substrates bzw. Solarzellenwafers einemThe substrate carriers are generally formed such that the substrates are subjected to a treatment process only from above. If necessary, also the bottom of the substrate or solar cell wafer one
Behandlungsprozess zu unterziehen, kann die dünne Platte im Bereich des Substrates gegenüber dem darunter liegende Tragrahmen mindestens eine Öffnung aufweisen. Durch den Tragrahmen und die Öffnung hindurch kann dann auch die Unterseite des Substrates mindestens teilweise behandelt werden kann.Undergo treatment process, the thin plate have at least one opening in the region of the substrate relative to the underlying support frame. Through the support frame and the opening through the bottom of the substrate can then be at least partially treated.
Die Substrataufnahme kann in vorteilhafter Weise an die spezifischen Substrate angepasst werden, während der Substratträger unverändert für alle Substrataufnahmen verwendet werden kann. Wegen der spezifisch plattenartig und damit dünnen Ausführung der Substrataufnahme passt sich diese sehr schnell an die gegebenen thermischen Bedingungen an, während sich der thermisch von der Substrataufnahme entkoppelte masseintensivere Tragrahmen geschützt unter der Substrataufnahme befindet und relativ träge auf Temperaturwechsel reagiert. Auf dieser Grundlage ist die thermische Beeinflussung der Substrate durch den Tragrahmen und die Substrataufnahme vernachlässigbar gering.The substrate holder can advantageously be adapted to the specific substrates, while the substrate carrier can be used unchanged for all substrate holders. Due to the specific plate-like and thus thin design of the substrate holder, this adapts very quickly to the given thermal conditions, while the mass-intensive support frame thermally decoupled from the substrate holder is protected under the substrate holder and reacts relatively slowly to temperature changes. On this basis, the thermal influence of the substrates by the support frame and the substrate holder is negligible.
Der erfindungsgemäße Substratträger kann sowohl bei Chargenanlagen wie bei Durchlaufanlagen konkret für die Be- handlung und/oder Beschichtung von Solarzellenwafern als auch für alle anderen flächigen oder geeigneten flachen Substrate angewandt werden. Besonders vorteilhaft ist der Einsatz bei der Anwendung relativ hoher Prozesstemperaturen und/oder reaktiven Atmosphären.The substrate carrier according to the invention can be used concretely both for batch systems and continuous-flow systems for the treatment and / or coating of solar cell wafers as well as for all other flat or suitable flat substrates. Particularly advantageous is the use in the application of relatively high process temperatures and / or reactive atmospheres.
Ausführungsbeispielembodiment
Die Erfindung wird nachstehend an einem Ausführungsbeispiel näher erläutert. Zugehörig zeigt Figur 1 eine perspektivische Ansicht auf einen Substratträger für die HaI- terung von 25 Solarzellenwafern. Figur 2 zeigt den Tra- grahmen ohne Substrataufnahme. Der Substratträger gemäß Ausführungsbeispiel ist in Figur 1 in einer perspektivischen Ansicht von oben dargestellt. Der Substratträger besteht im Wesentlichen aus einem unteren Tragrahmen 1 und einer darauf aufliegenden Substrat- aufnähme 2. In die Substrataufnahme 2 sind beispielhaft 5 x 5 Ausnehmungen in Form von Öffnungen 3 mit seitlichen Auflagen 4 zur Halterung von rechteckigen 156 x 156 mm großen Solarzellenwafern 5 mit einer Größe von 158 x 158 mm eingearbeitet. In Figur 1 ist nur in der un- teren Öffnung 3 ein Solarzellenwafer 5 eingelegt. Die plattenförmige Substrataufnahme 2 hat eine Dicke von 1,2 mm und die Auflagen 4 sind gegenüber der Oberseite der Substrataufnahme 2 um 0,5 mm abgesenkt, so dass der Solarzellenwafer 5 mit einer Dicke von 0,5 mm sicher in der Öffnung 2 positioniert ist.The invention will be explained in more detail using an exemplary embodiment. In addition, FIG. 1 shows a perspective view of a substrate carrier for the enclosure of 25 solar cell wafers. FIG. 2 shows the trachea without substrate receiving. The substrate carrier according to the embodiment is shown in Figure 1 in a perspective view from above. The substrate carrier essentially consists of a lower support frame 1 and a substrate holder 2 resting thereon. By way of example, 5 × 5 recesses in the form of openings 3 with lateral supports 4 for holding rectangular 156 × 156 mm solar cell wafers 5 are included in the substrate receptacle 2 a size of 158 x 158 mm incorporated. In FIG. 1, a solar cell wafer 5 is inserted only in the lower opening 3. The plate-shaped substrate holder 2 has a thickness of 1.2 mm and the supports 4 are lowered relative to the top of the substrate holder 2 by 0.5 mm, so that the solar cell wafer 5 with a thickness of 0.5 mm is securely positioned in the opening 2 ,
Die Substrataufnahme 2 überdeckt den Tragrahmen 1 in seiner Gesamtheit, so dass dieser gegenüber oberhalb angeordneten Heizquellen abgeschirmt ist. Erforderlichenfalls können die seitlichen Bereiche des Tragrahmens 1 noch mit zusätzlichen Abdeckungen vor Wärmestrahlung geschützt werden.The substrate holder 2 covers the support frame 1 in its entirety so that it is shielded from above arranged heating sources. If necessary, the lateral areas of the support frame 1 can still be protected with additional covers from heat radiation.
In Figur 2 ist der Tragrahmen 1 ohne Substrataufnahme 2 dargestellt, so dass die selbsttragende und biegesteife Rahmenstruktur mit winklig zueinander angeordneten Längs- tegen 6 und Querstegen 7 sichtbar ist. Im Ausführungsbeispiel weist der Tragrahmen 1 zur Erreichung einer selbsttragenden biegesteifen und auch massearmen Konstruktion weitere konstruktive Elemente auf. Dazu gehören in der Längsrichtung als Führungsschienen ausgebildete Außenstege 8. Alle Elemente des Tragrahmens 1 sind in bekannter Weise mittels nicht näher dargestellter Steckelemente, insbesondere mittels Zapfen und zugeordneten Ausnehmungen zueinander positioniert und miteinander verbunden. Erfindungswesentlich sind gleichmäßig über die gesamte Oberfläche des Tragrahmens 1 verteilt' thermische Isolierelemente 9 vorgesehen, auf denen die plattenförmige Substrataufnahme 2 aufliegt. Zur Positionierung der Substrat- aufnähme 2 auf dem Tragrahmen 1 sind am Tragrahmen 1 • Positionierstifte 10 vorgesehen, die in zugeordnete Löcher 11 in der Substrataufnahme 2 eingreifen. Die konkrete Ausführung kann leicht an spezifische und örtliche Bedingungen abgepasst werden.In Figure 2, the support frame 1 is shown without substrate receptacle 2, so that the self-supporting and rigid frame structure with angle to each other arranged longitudinal tegen 6 and transverse webs 7 is visible. In the exemplary embodiment, the support frame 1 to achieve a self-supporting rigid and also low-mass construction further constructive elements. These include in the longitudinal direction as guide rails formed outer webs 8. All elements of the support frame 1 are positioned in a known manner by means not shown sockets, in particular by means of pins and associated recesses to each other and connected. Essential to the invention are evenly distributed over the entire surface of the support frame 1 'thermal insulation provided 9, on which the plate-shaped substrate holder 2 rests. For positioning the substrate Aufnähme 2 on the support frame 1 positioning pins 10 are provided on the support frame 1, which engage in associated holes 11 in the substrate holder 2. The concrete design can be easily adapted to specific and local conditions.
Die Elemente des Tragrahmens 1 sind aus einem CFC-Verbund- werkstoff hergestellt und die Substrataufnahme 2 besteht aus einem Kohlenstoff-Verbundmaterial, das mindestens bis 800 0C formstabil ist. Die thermischen Isolierelemente 9 bestehen aus Graphitstiften.The elements of the support frame 1 are made of a CFC composite material and the substrate holder 2 is made of a carbon composite material, which is dimensionally stable at least up to 800 0 C. The thermal insulation elements 9 are made of graphite pins.
Das Kohlenstoff-Verbundmaterial besteht zu 100 % aus faserverstärkten Kohlenstoffen (CFC) . Einer Matrix reinen Kohlenstoffs sind Kohlenstoff- oder Graphitfasern von nur wenigen μm Durchmesser beigemischt. Dieses Material weist eine hohe mechanische Stabilität auf, da die Matrix ausThe carbon composite is made from 100% fiber-reinforced carbon (CFC). Carbon or graphite fibers of only a few microns in diameter are admixed to a matrix of pure carbon. This material has a high mechanical stability, as the matrix out
Kohlenstoff von außen wirkende Kräfte aufnimmt und im Gefüge verteilt.Absorbs carbon from outside forces and distributes it in the structure.
Diese eingesetzten Materialien sind für die vorliegende Aufgabe kostengünstig und erfüllen die Anforderungen an die Formstabilität des Substratträgers. Insbesondere ist die Wärmedehnung für den im Ausführungsbeispiel angegebenen Tragrahmen 1 beherrschbar. Weiterhin sind die Materialien widerstandsfähig gegenüber den spezifisch angewandten Beschichtungs- und Ätzprozessen und sind relativ leicht zu reinigen. Die Öffnungen 3 in der Substrataufnahme 2 sind beispielhaft nach unten offen, dadurch ist es möglich auch die untere Seite der Solarzellenwafer 5, unter Abzug der Flächen mit denen die Solarzellenwafer 5 auf den seitlichen Auflagen 4 aufliegen, von unten durch den Tragrahmen 1 hindurch den erforderlichen Beschichtungs- und Ätzprozessen auszusetzen. Soweit das nicht erforderlich ist, können die Öffnungen 3 in der Substrataufnahme 2 nach unten auch geschlossen sein, d.h. die Auflagen 4 sind durch eine ab- gesenkte Fläche ersetzt. These materials used are cost effective for the present task and meet the requirements of the dimensional stability of the substrate carrier. In particular, the thermal expansion for the support frame 1 indicated in the exemplary embodiment is manageable. Furthermore, the materials are resistant to the specific coating and etching processes used and are relatively easy to clean. The openings 3 in the substrate receptacle 2 are open by way of example downwards, thereby it is also possible the lower side of the solar cell wafer 5, taking off the surfaces with which the solar cell wafer 5 rest on the lateral supports 4, from below through the support frame 1 therethrough Exposure to coating and etching processes. Insofar as this is not necessary, the openings 3 in the substrate receptacle 2 can also be closed downwards, ie the supports 4 are replaced by a lowered surface.

Claims

Patentansprüche claims
1. Substratträger zur Halterung von Substraten, bestehend aus einem Tragrahmen (1) und mindestens einer Substrataufnahme (2), dadurch gekennzeichnet, dass der Tragrahmen (1) eine selbsttragende und biegesteife Rahmenstruktur aus winklig zueinander angeordneten Längsstegen (6) und Querstegen (7) aus einem bis 800 0C formstabilen Material aufweist, dass die Substrataufnahme (2) auf dem Tragrahmen (1) aufliegt und plattenartig derart ausgebildet ist, dass die Solar- zellenwafer (5) auf der Oberseite der Substrataufnahme (2) positioniert werden können, und dass zwischen dem Tragrahmen (1) und der Substrataufnahme (2) thermische Isolierelemente (9) vorhanden sind.1. substrate carrier for mounting substrates, consisting of a support frame (1) and at least one substrate holder (2), characterized in that the support frame (1) has a self-supporting and rigid frame structure of angularly arranged mutually longitudinal webs (6) and transverse webs (7) comprising a dimensionally stable up to 800 0 C material that the substrate holder (2) on the support frame (1) rests and plate-like is formed such that the solar cell wafer (5) on the top of the substrate holder (2) can be positioned, and in that thermal insulation elements (9) are present between the support frame (1) and the substrate receptacle (2).
2. Substratträger nach Anspruch 1, dadurch gekennzeichnet, dass die Substrataufnahme (2) derart ausgebildet ist, dass die Substrate in Ausnehmungen aufliegen oder mit Positionierhilfen in Form von Anschlägen positioniert werden.2. Substrate carrier according to claim 1, characterized in that the substrate holder (2) is designed such that the substrates rest in recesses or positioned with positioning aids in the form of attacks.
3. Substratträger nach Anspruch 1, dadurch gekennzeichnet, dass die Substrataufnahme (2) derart ausgebildet ist und/oder gesonderte zusätzliche Abdeckungen neben der Substrataufnahme und über dem Tragrahmen vorhanden sind, dass der gegenüber den Heizquellen darunter liegende Tragrahmen (1) keiner direkten Wärmestrahlung ausgesetzt ist. 3. substrate carrier according to claim 1, characterized in that the substrate holder (2) is designed and / or separate additional covers next to the substrate holder and on the support frame are present, that of the heat sources underlying support frame (1) exposed to any direct heat radiation is.
4. Substratträger nach Anspruch 1, dadurch gekennzeichnet, dass die Elemente des Tragrahmens (1) und die Substrataufnahme (2) aus Stahl, Titan, Aluminium, Keramik, CFC (CFC = Carbon Fiber reinforced Carbon) oder daraus hergestellten Verbundwerkstoffen bestehen.4. substrate carrier according to claim 1, characterized in that the elements of the support frame (1) and the substrate holder (2) made of steel, titanium, aluminum, ceramic, CFC (CFC = Carbon Fiber Reinforced Carbon) or composite materials made thereof.
5. Substratträger nach Anspruch 1, dadurch gekennzeichnet, dass die Substrataufnahme (2) im Bereich des Substrates gegenüber dem darunter liegende Tragrahmen (1) mindestens eine Öffnung aufweist, durch die hindurch die Unterseite des Substrates mindestens teilweise behandelt werden kann. 5. substrate carrier according to claim 1, characterized in that the substrate holder (2) in the region of the substrate relative to the underlying support frame (1) has at least one opening through which the underside of the substrate can be treated at least partially.
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WO2010085949A3 (en) 2013-03-21

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