WO2010082567A1 - ウエハ分離装置、ウエハ分離搬送装置、ウエハ分離方法、ウエハ分離搬送方法及び太陽電池用ウエハ分離搬送方法 - Google Patents
ウエハ分離装置、ウエハ分離搬送装置、ウエハ分離方法、ウエハ分離搬送方法及び太陽電池用ウエハ分離搬送方法 Download PDFInfo
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- WO2010082567A1 WO2010082567A1 PCT/JP2010/050233 JP2010050233W WO2010082567A1 WO 2010082567 A1 WO2010082567 A1 WO 2010082567A1 JP 2010050233 W JP2010050233 W JP 2010050233W WO 2010082567 A1 WO2010082567 A1 WO 2010082567A1
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- Prior art keywords
- wafer
- cassette
- wafers
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- separating
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- 238000000034 method Methods 0.000 title claims description 41
- 235000012431 wafers Nutrition 0.000 claims abstract description 442
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- 238000000926 separation method Methods 0.000 claims description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- 238000012546 transfer Methods 0.000 claims description 46
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- 238000013404 process transfer Methods 0.000 claims 1
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- 239000004065 semiconductor Substances 0.000 description 5
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
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- 239000000243 solution Substances 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G59/00—De-stacking of articles
- B65G59/02—De-stacking from the top of the stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Definitions
- the present invention relates to a wafer separating apparatus, a wafer separating / conveying apparatus, a wafer separating method, a wafer separating / conveying method, and a solar cell wafer separating / conveying method for separating a single wafer before separation.
- energy problems such as depletion of fossil fuel resources and environmental problems such as global warming.
- silicon having a purity of 99.9999% or more and a specific resistance of 0.5 ⁇ cm or more is required as silicon that can be used as a solar cell.
- High-purity silicon used in the semiconductor industry, IC, LSI, or the like Non-standard products generated when manufacturing the substrate were used as raw materials.
- the amount used is the amount of silicon wafers such as IC and LSI.
- the amount of silicon wafers such as IC and LSI.
- high-purity silicon for semiconductors is expensive, and the amount of non-standard products generated is small, so there is a problem that the supply amount as a silicon material for solar cells is limited. .
- the surface of the silicon wafer for solar cells is more rough, the surface area can be secured. Therefore, a wafer that has been cut into pieces after the silicon ingot has been cut with a wire saw has the same surface as a semiconductor wafer. There is no polishing to the mirror finish.
- an expensive and large separation / conveying device is used to transport a single wafer to a machine for the next process (surface finishing process, etc.).
- an expensive and large-sized separation / conveying device that affects the unit price of the product is not used, and the fact is that each wafer is separated manually.
- a large number of wafers sliced with a wire saw in a state where an ingot formed in a substantially cylindrical shape is stuck to a support plate is for removing slurry, chips, etc. in a columnar aggregate state stuck to the support plate.
- the pre-cleaned wafer is separated from the support plate by the separation device to separate the wafer from the support plate, and then separated by the separation / conveyance device. It is conveyed to the next process.
- Ultrasonic cleaning is effective for cleaning the side surface and both end surfaces of the silicon ingot, but it is difficult for the cleaning liquid sprayed to reach the deep part between the cut wafers. There is a problem that chips and the like cannot be completely removed, and the cleaning effect is reduced.
- the wafer after pre-cleaning is peeled off from the support plate by a peeling device (single wafer), it is immersed in a solution of acetic acid or the like to peel off the wafer from the support plate and at the same time perform secondary cleaning to leave the remaining slurry. And chips are removed.
- each wafer that has been subjected to the secondary cleaning is in close contact with each other in a horizontally stacked state (folded state) at the time of transfer, so that the wafer that is stationary at the top is positioned below (below) the wafer. Since the initial resistance to be separated from the static friction resistance is larger than the dynamic friction resistance, there is a problem that it is difficult to perform a reliable separation operation.
- Patent Document 1 two jet nozzles for jetting water upward are arranged in the lower part inside the shooter in the separation / conveyance device, and the jet nozzle passes through a gap between the shooter and the laminated wafer.
- the separation operation is smoothly performed.
- the wafer may be chipped when the pressure water is sprayed on the thinned wafer, and the wafer of the next layer is transferred more than the uppermost wafer. If it is located on the downstream side in the direction, the next wafer also floats together with the uppermost wafer, and there is a problem that the wafer may be transported together without being separated.
- the present invention can improve the separation performance of the wafer at the time of separation / transport while suppressing the occurrence of breakage of the wafer at the time of separation / transport, while being inexpensive and compact.
- An object is to provide a wafer separation apparatus.
- the wafer separating apparatus of the present invention accommodates a large number of wafers that are separated into one another in a close-contact state, and at least opens up and down, and supports the cassette so that it can be attached and detached and at least opened up and down.
- a body a lifting device that lifts and lowers the cassette support integrally with the cassette, a liquid tank that contains a liquid in which the cassette support is immersed integrally with the cassette when the lifting device is lowered, and the liquid
- a nozzle installed in the tank and ejecting fine bubbles from below the cassette support toward a number of wafers; and a fine bubble generating device for generating fine bubbles ejected from the nozzle. It is characterized by.
- the wafer separation apparatus of the present invention it is possible to improve the wafer separation performance and suppress the occurrence of wafer breakage and the like while being inexpensive and compact.
- the wafer separating / conveying apparatus of the present invention accommodates a plurality of wafers in a vertically placed state, and a cassette that opens at least vertically and a cassette that detachably supports the cassette and opens at least vertically A support, a lifting device that lifts and lowers the cassette support integrally with the cassette, and the cassette support so that a wafer installed in the lifting device and stored in the cassette is switched between a vertically placed state and a horizontally placed state
- a nozzle that ejects microbubbles from below the cassette support toward a number of wafers, and microbubble generation that generates microbubbles ejected from the nozzle
- a take-out body for taking out the horizontally placed wafer raised from the liquid tank from the top, and a carrier for carrying the top wafer taken out
- the wafer separation / conveyance apparatus of the present invention while being inexpensive and compact, it is possible to improve the separation performance of the wafer at the time of separation / conveyance and to suppress the occurrence of breakage of the wafer at the time of separation / conveyance.
- a wafer separation transfer apparatus wherein the transfer body is arranged near the upstream side of the transfer path and determines a defect of the wafer in the transfer process, and more than the defect determination apparatus
- a branching device that is arranged on the downstream side of the transfer path and that is determined to have a defect is branched to a disposal route that is different from the transfer route, and the defect determination unit determines that no defect exists.
- a recovery device for recovering the wafer for recovering the wafer.
- the wafer separating / conveying apparatus of the third aspect when any defect occurs in the separated wafer, it can be bounced (removed) in the conveying process.
- the wafer separating apparatus according to claim 4 or the wafer separating / conveying apparatus according to claim 4 includes a moving device that moves the nozzle or the cassette support along the adjacent direction of the wafer.
- fine bubbles can be ejected uniformly between the wafers.
- the wafer separating apparatus or the wafer separating / conveying apparatus according to claim 5 is provided with a cover that covers five surfaces excluding the lower surface of the cassette support while being immersed in the liquid tank. .
- the wafer separating apparatus or the wafer separating / conveying apparatus of the fifth aspect it is possible to promote the entry of fine bubbles between the wafers.
- the wafer separating apparatus or the wafer separating / conveying apparatus according to claim 6 is characterized in that the fine bubble generating device ejects negatively charged fine bubbles from the nozzle.
- the fine bubbles can be caused to enter between the wafers.
- the fine bubble generating device is a fine bubble having a diameter equal to or smaller than a groove width when cut by a wire saw used when a silicon ingot is made into a single wafer. Is ejected from the nozzle.
- the groove width of the groove formed between the wafers is generally equal to or larger than the wire diameter of the wire saw, the bubbles smaller than the groove width are formed. By ejecting the fine bubbles having a diameter, the fine bubbles can be intruded between the wafers.
- the groove width of the groove formed between the wafers is generally equal to or larger than the wire diameter of the wire saw, the wire diameter is used as a reference. By ejecting the fine bubbles having the following bubble diameters, the fine bubbles can be more reliably intruded between the wafers.
- the wafer separating apparatus or the wafer separating / conveying apparatus according to claim 9 is characterized in that the fine bubble generating device ejects fine bubbles having a diameter of 100 ⁇ m or less from the nozzle.
- the wire diameter of the wire held by the wire saw is 100 to 150 ⁇ m, fine bubbles having a bubble diameter based on the minimum diameter are generated. As a result, it is possible to surely allow fine bubbles to enter between the wafers without any special setting change.
- the wafer separating apparatus or the wafer separating / conveying apparatus according to claim 10 is characterized in that the fine bubble generating device ejects fine bubbles having an average diameter of 20 ⁇ m or less from the nozzle.
- the volume of the gas layer can be increased by increasing the number of fine bubbles that have entered between the wafers, thereby realizing more reliable separation. can do.
- the bubble size of the actual microbubbles has a certain size error, the bubble size can be defined by using the average value as the bubble diameter generation standard.
- the wafer separating and conveying apparatus wherein the cassette has the same traveling direction of the wire saw used when the silicon ingot is made into a single wafer and the direction of taking out and carrying the wafer by the takeout body and the transport body. As described above, a large number of wafers are stored in a vertically placed state in close contact with each other.
- the cutting flaw direction formed along the wire traveling direction at the time of cutting using the wire saw and the wafer conveying direction are made the same, thereby intersecting the wire conveying direction at the time of conveying. The occurrence of scratches can be suppressed.
- the wafer separating / conveying apparatus when the cassette support is erected and the wafer is placed horizontally, it is possible to prevent each wafer from moving unexpectedly due to the fine bubbles that enter between the wafers. be able to.
- a large number of wafers are stored in a vertically-attached cassette at least in a vertically opened cassette, and the cassette is placed on a cassette support that is at least vertically opened.
- a fine bubble ejecting step for ejecting fine bubbles generated by the fine bubble generating device toward the vertically placed wafer to infiltrate and stagnate the fine bubbles into each of a plurality of wafers. .
- the wafer separation method of the present invention it is possible to improve the wafer separation performance and suppress the occurrence of breakage of the wafer while being inexpensive and small.
- the wafer separating / conveying method of the present invention includes a storing step of storing a plurality of wafers in a vertically aligned state in a cassette that opens at least vertically, and a cassette support that opens at least vertically.
- a fine bubble ejection step for ejecting microbubbles generated by a microbubble generator toward a vertically placed wafer from each of the wafers to intrude and stagnate the microbubbles between each of the wafers, and using a rotating device Rotating step in which a cassette support body with fine bubbles entering and staying between the wafers is rotated together with the cassette to place a large number of wafers horizontally.
- the wafer separating / conveying method of the present invention while being inexpensive and small, it is possible to improve the separation performance of the wafer at the time of separation / conveyance and to suppress the occurrence of damage to the wafer at the time of separation / conveyance.
- the wafer separating / conveying method of the present invention includes a storing step for storing a plurality of separated wafers in a vertically opened cassette at least vertically, and a cassette support that opens at least vertically.
- a mounting support step for mounting and supporting the cassette, a preliminary cleaning step for preliminarily cleaning the vertically placed wafer by lowering the cassette support body integrally with the cassette using a lifting device, and the cassette after the preliminary cleaning A step of taking out and transporting the cassette, a descending step of immersing the transported cassette in the liquid in the liquid tank, and a microbubble generator generated from the lower side of the cassette support toward the vertically placed wafer.
- a fine bubble ejection step for injecting and stagnating fine bubbles between each of a plurality of wafers by ejecting the fine bubbles, and using a rotating device to A rotating step in which a cassette support with fine bubbles intruded between wafers and staying in the wafer is rotated together with the cassette to place a large number of wafers horizontally, and the wafer is placed horizontally using the lifting device.
- the cassette support is lifted together with the cassette while the uppermost wafer is lifted above at least the liquid level of the liquid tank, and the uppermost position is lifted above the liquid level. It is characterized by comprising a take-out step for taking out the upper wafer, and a carrying step for carrying the taken-out wafer.
- the pre-cleaned wafer be pre-cleaned and then subjected to separation / conveying, but it is also possible to fully automate the work process from pre-cleaning to separation / conveying. be able to.
- the wafer separating and conveying method for solar cells of the present invention includes a cutting step for cutting a silicon ingot into a plurality of pieces integrally with a support plate, a peeling step for peeling the cut silicon ingot from the support plate into a single wafer, and a peeling A storing step for storing a large number of subsequent wafers at least vertically in a cassette that opens vertically, and a mounting support step for mounting and supporting the cassette on a cassette support that opens at least vertically A lowering step in which the cassette support is lowered integrally with the cassette using a lifting device to immerse the vertically placed wafer in the liquid in the liquid tank; and from the lower side of the cassette support to the vertically placed wafer.
- a fine bubble jetting step in which fine bubbles generated by a fine bubble generator are ejected toward each other to intrude and stagnate between the wafers.
- a rotating step in which a cassette support body in which fine bubbles are invaded and stagnated between each of a plurality of wafers using a rotating device is rotated integrally with the cassette to horizontally place the plurality of wafers;
- a take-out step for taking out the uppermost wafer pulled up above the liquid level, a carrying step for carrying the taken-out wafer, and a transfer step for carrying the carried wafer to the solar cell manufacturing apparatus. It is characterized by being.
- the solar cell wafer separation and transport method of the present invention while being inexpensive and compact, the wafer separation performance during the separation and transport of the solar cell wafer is improved, and the wafer breakage during the separation and transport, etc. Occurrence can be suppressed. It is also possible to automatically collect the wafers transferred in the transfer step in a wafer recovery box, and then automatically transfer the recovered wafer recovery box to the next process using a multi-axis robot arm.
- the wafer separation apparatus of the present invention is inexpensive and compact, it can improve the separation performance of the wafer at the time of separation / transfer, and can suppress the occurrence of breakage of the wafer at the time of separation / transfer.
- FIG. 1A is an enlarged cross-sectional view of a main part showing the relationship between a wafer and bubbles, and FIG.
- a single crystal silicon wafer is first manufactured by a CZ method (pull-up method) or the like, and is substantially provided with a substantially conical silicon end material integrally on the left and right ends (up and down during growth).
- a cylindrical silicon ingot 1 (see the upper part of FIG. 11) is cut out into the appropriate dimensions (lengths) as necessary after cutting the silicon end materials 1a and 1b (see the middle part of FIG. 11), and then a band saw. Or the like is used to obtain a silicon block 2 having a substantially quadrangular prismatic shape (in some cases, chamfering each corner) (see the lower part of FIG. 11).
- the cross-sectional shape of the silicon block 2 is preferably rectangular or substantially rectangular, and is preferably cut out from the silicon ingot 1.
- the wire block 3 is used to cut the silicon block 2 into a large number of pieces.
- the slurry which is a liquid, is discharged from a slurry nozzle (not shown), and in that state, a cutting feed is applied between the wire 4 and the silicon block 2 to cut the silicon block 2 into multiple pieces.
- 6 is a wire feeding pulley
- 7 is a wire winding pulley
- 8 is a wire winding device.
- a support plate 10 made of glass or the like is attached to a mounting body 9 such as stainless steel provided in a block lifting / lowering support device (not shown).
- the upper surface of the silicon block 2 is bonded and fixed to the lower surface of 10 via an adhesive (not shown).
- a kerf is formed to a part of the lower side of the support plate 10 so that each wafer after cutting is easily separated.
- the silicon block 2 is preliminarily cleaned by a precleaning device (not shown) in order to remove slurry, chips and the like while being in the columnar aggregate state adhered to the support plate 10, and then the silicon block 2 is removed from the silicon block 2 by secondary cleaning.
- the support plate 10 is peeled to form a single sheet.
- FIG. 1 is a front sectional view of a wafer separating / conveying apparatus in a wafer set state equipped with a wafer separating apparatus according to an embodiment of the present invention
- FIG. 2 is a bubble equipped with a wafer separating apparatus according to an embodiment of the present invention
- FIG. 3 shows a wafer separation apparatus according to an embodiment of the present invention
- FIG. 3 (A) shows the relationship between wafers and bubbles.
- FIG. 3B is an explanatory view of bubbles
- FIG. 4 is a side sectional view of a wafer separating / conveying apparatus in a vertically mounted wafer state equipped with a wafer separating apparatus according to an embodiment of the present invention.
- FIG. 1 is a front sectional view of a wafer separating / conveying apparatus in a wafer set state equipped with a wafer separating apparatus according to an embodiment of the present invention
- FIG. 2 is a bubble equipped with a wafer separating apparatus according to an embodiment of the present invention.
- FIG. 5 is an explanatory view of a wafer separating / conveying apparatus in a horizontal state provided with a wafer separating apparatus according to an embodiment of the present invention
- FIG. 7 is an explanatory view of a wafer separating and conveying apparatus according to an embodiment of the present invention.
- FIG. 8 is a flowchart showing a wafer separating apparatus according to an embodiment of the present invention and showing a work routine from wafer cutting to separating and conveying. It is.
- a wafer separation / conveyance apparatus 11 including a wafer separation apparatus stores a large number of wafers W in a vertically placed state in close contact with each other.
- a cassette 12 that opens at least up and down
- a cassette support 13 that detachably supports the cassette 12 and opens at least up and down
- a lifting device 14 that lifts and lowers the cassette support 13 integrally with the cassette 12, and a lifting device 14
- the rotating device 15 that rotates the cassette support 13 integrally with the cassette 12 and the elevating device 14 are lowered so that the wafer W that is installed and stored in the cassette 12 is switched between the vertically placed state and the horizontally placed state.
- the separation performance of the wafer W at the time of separation / conveyance is improved and the occurrence of breakage of the wafer W at the time of separation / conveyance is suppressed. can do.
- the wafer separating / conveying device 11 irradiates fine bubbles uniformly between the wafers W by providing the moving device 21 that moves the nozzle 17 or the cassette support 13 along the adjacent direction of the wafer W. can do.
- the fine bubble generating device 18 ejects finely charged fine bubbles from the nozzle 17, so that when the space between the wafers W after being cut by the wire saw 3 is positively charged, the fine bubbles are introduced between the wafers W. Can be made to invade.
- the fine bubble generating device 18 preferably ejects fine bubbles having a diameter equal to or smaller than the groove width when cut by the wire saw 3 from the nozzle 17, and the wire saw 3 used when the silicon ingot 1 is made into a single wafer. More preferably, fine bubbles having a diameter equal to or smaller than the wire diameter of the wire 4 used in the above are ejected from the nozzle 17, more preferably, fine bubbles having a diameter of 100 ⁇ m or less are ejected from the nozzle 17, and the average is 20 ⁇ m or less. It is best to eject fine bubbles of diameter from the nozzle 17.
- the cassette 12 has a single wafer so that the traveling direction of the wire saw 3 used when the silicon ingot 1 is made into a single sheet and the wafer W extraction / conveyance direction by the extraction body 19 and the conveyance body 20 are the same. It is preferable that a large number of wafers W are stored in a vertically placed state in close contact.
- the cassette 12 can store a large number of wafers W and has a lower opening 12a for allowing fine bubbles ejected from the nozzle 17 to pass therethrough. Etc. are not limited.
- the wafer W is also opened upward so that the wafer W can be accommodated, and the take-out body 19 is placed horizontally at the top when the wafer W is to be described later. It is set lower than the height of the wafer W (when placed vertically) so that it can come into contact.
- the cassette support 13 can be attached / detached and supported by the cassette 12 and has a shape with a sufficient strength provided that a lower opening 13a for allowing the fine bubbles ejected from the nozzle 17 to pass therethrough is formed.
- the material and the like are not limited.
- the cassette 12 is also opened upward so that the cassette 12 can be accommodated, and the take-out body 19 is in contact with the wafer W positioned on the uppermost side when taking out, which will be described later. Is set lower than the height of the wafer W (when placed vertically).
- the elevating device 14 includes a shaft 23 that is extended by driving an elevating drive device (for example, a solenoid) (not shown), an intermediate support 24 fixed to the upper end of the shaft 23, and a side wall of the liquid tank 16 along the vertical direction.
- a fixed substrate 28 fixed, a crank-shaped support substrate 29 fixed to the fixed substrate 28, and a shaft support portion 30 fixed to a lower plate 29 a of the support substrate 29 are provided.
- the guide rail 25 and the guide plate 26 support the rotating device 15 and the cassette 12 in a cantilever state by a fixed shaft 27, the guide rail 25 and the guide plate 26 are slid in a position considering the weight balance (left and right direction in FIG. 1). It is set to be.
- the support substrate 29 is fixed to the upper surface of the fixed substrate 28, and an upper plate 29b whose tip protrudes inside the liquid tank 16, a vertical plate 29c that extends downward from the tip of the upper plate 29b, and a lower end of the vertical plate 29c. And a horizontal lower plate 29a that is bent at right angles toward the inner side of the liquid tank 16, and is formed into a substantially crank shape in cross section by these plates 29a, 29b, and 29c.
- the rotation device 15 is fixed to the upper plate 29 b and has a drive motor 31 whose output shaft protrudes toward the inside of the liquid tank 16, a drive pulley 32 provided in the drive motor 31, and a shaft support portion 30.
- the cassette support 13 is fixed to the rotating arm 35. Further, when the drive motor 31 is driven to rotate the rotating arm 35, the cassette 12 rotates integrally with the cassette support 13 and is in its lying down state (horizontal state) as shown in FIG. Each wafer W housed in the cassette 12 is placed vertically, and as shown in FIG. 4, the wafer W housed in the cassette 12 is placed horizontally when in its upright state (vertical state).
- the rotating arm 35 when the rotating arm 35 is in its upright state, the rotating arm 35 can approach the position where the upper edge portion (when placed vertically) of the wafer W accommodated in the cassette 12 is substantially in close contact with the inner wall surface of the liquid tank 16. Is set. When the wafer W is brought up to a position where the upper edge of the wafer W (vertically placed) is in close contact with the inner wall surface of the liquid tank 16, each wafer W is caused by fine bubbles B that have entered between the wafers W described later. Unintentional movement can be suppressed.
- the liquid tank 16 has a depth in which a liquid such as pure water is stored therein, and the wafer W stored in the cassette 12 is completely immersed when the lifting device 14 is lowered.
- the depth of the liquid tank 16 is such that the wafer W is completely immersed even when the cassette support 13 is erected with the lifting device 14 positioned at the bottom dead center. (At least at the liquid level).
- the liquid stored in the liquid tank 16 can be appropriately selected except for volatility in consideration of the fact that minute bubbles to be described later need to stay between the wafers W for a certain period of time.
- a secondary cleaning solution or the like can be used.
- the number of nozzles 17 is not particularly limited as long as the nozzles 17 are installed in the vicinity of the deepest part of the liquid tank 16 and can eject fine bubbles generated by the fine crime bubble generator 18.
- the fine bubble generating device 18 includes, for example, a pump, a mixer (both not shown), etc., and a known device that can change and adjust the bubble diameter of the fine bubbles generated by setting the pressure is used. Yes. In the present embodiment, it is set to 100 ⁇ m or less. Strictly speaking, as shown in FIG. 6A, the average bubble diameter of the fine bubbles B that have entered between the wafers W is around 20 ⁇ m, so-called nanobubbles. If it can generate
- the microbubble generator 18 is charged negatively ( ⁇ ) around the inside of the bubble.
- the slurry removed during the pre-cleaning or the secondary cleaning is positively charged, the slurry remains between the wafers W even after the secondary cleaning. And the like are often positively charged, so that the finely charged fine bubbles can efficiently enter between the wafers W by the attracting effect.
- the take-out body 19 is a roller body that rotates (counterclockwise in FIG. 1) when driven by a drive motor (not shown).
- the material is elastic and has a relatively low frictional resistance. Higher ones are used (eg urethane).
- the take-out body 19 is composed of a single roller body, but can be set to a position and number in consideration of the transfer width of the wafer W.
- the transport body 20 includes a pair of upper and lower roller bodies 37 that nip transport the wafer W by rotating in the opposite directions by using a drive motor that rotationally drives the take-out body 19 or separately installed, A transport support plate 38 disposed adjacent to the downstream side of the roller body 37 in the transport direction, a defect determination device 39 disposed above the transport support plate 38, and a plurality of disposed adjacent to the transport support plate 38 downstream of the transport direction.
- a recovery device 42 for recovering a non-wafer W.
- the conveyance support plate 38 and the conveyance belt conveyor 40 are provided with elasticity and have a relatively high frictional resistance (for example, urethane).
- the branching device 41 tilts a part of the transport belt conveyor 40 downward (two-dot chain line state in FIG. 8) to temporarily cut the transport path and discard it at the path cutting site on the downstream side in the transport direction. to recover. At this time, the discarded wafer W is used for reuse.
- the defect determination device 39 determines whether cracks (cracks, cracks, etc.) or chipping have occurred by image processing using a CCD camera.
- the recovery device 42 includes a housing 43, a servo motor 44 provided on the housing 43, a drive pulley 45 provided on an output shaft of the servo motor 44, a driven pulley 46 rotatably supported by the housing 43, A belt 47 provided rotatably on the pulleys 45, 46, a ball screw 48 that passes through the driven pulley 46 and is displaced in the vertical direction by the rotation of the driven pulley 46, and an elevation that connects one end of the ball screw 48.
- a body 49 and a wafer collection box 50 detachably mounted on the elevating body 49.
- the front surface of the wafer collection box 50 is open, and a partition (not shown) such as a slit is provided so that the cleaned wafers W can be stored in a separated state.
- a guide protrusion 52 that engages with a guide rail 51 provided on the housing 43 is provided on the back surface of the elevating body 49.
- a connecting portion 53 to which one end of the ball screw 48 is rotatably connected.
- the wafers W transferred by the transfer belt conveyor 40 are sequentially collected and stored in a separated state from the upper side of the wafer recovery box 50, and the wafer recovery box 50 is sequentially displaced upward by the inching drive of the servo motor 44.
- the wafer W is collected and stored for each partition.
- downstream end of the conveyor belt conveyor 40 disposed on the most downstream side in the wafer conveyance direction faces the inside of the wafer collection box 50.
- the drive pulley 45 and the driven pulley 46 are adjusted in the same manner as the gear ratio by changing their diameters. Further, a solenoid or the like may be used for the servo motor 44, the driven pulley 46, the belt 47, and the ball screw 48.
- the moving device 21 moves the nozzle 17 horizontally along the adjacent direction of the wafer W, and moves it at a speed of, for example, 5.0 mm / sec.
- the moving device 21 may move the cassette 12 horizontally along the adjacent direction of the wafer W instead of moving the nozzle 17.
- the cover 22 covers the five surfaces except for the lower side of the cassette support 13 with almost no gap.
- the fine bubbles ejected from the nozzle 17 are confined in the cover 22 to prevent the fine bubbles from entering between the wafers W.
- the material and shape of the cover 22 are not particularly limited. Further, the cassette 12 is removed while the cassette 12 is moved up and down by the lifting device 14 or when the cassette support 13 is turned upright.
- the wafer W is cut into multiple pieces integrally with the support plate 10 (step S1), and the cut silicon ingot 1 is peeled off from the support plate 10 into a single wafer.
- a mounting support step (step S4) for mounting and supporting the cassette 12 on the cassette support 13 to be opened, and the cassette support 13 is lowered integrally with the cassette 12 by using the elevating device 14, and the vertically placed wafer W is placed in the liquid tank.
- a rotating step (step S7) in which the cassette support 13 with the fine bubbles intruded between the wafers W is rotated integrally with the cassette 12 to place a large number of wafers W horizontally step S7); 14 is used to raise the cassette support 13 integrally with the cassette 12 while keeping the wafer W in the horizontal position, and to lift the wafer W positioned at the uppermost position above at least the liquid surface of the liquid tank 16 ( Step S8), a take-out step (Step S9) for taking out the uppermost wafer W pulled up above the liquid level, and a transfer step for carrying the wafer W after take-out.
- the wafer W can be transferred to a manufacturing process as a wafer for a solar cell, such as transferring the wafer W toward a chemical etching apparatus for performing texture processing.
- step S2 After the silicon ingot 1 is cut using the wire saw 3 in step S1, the cut silicon ingot 1 that is supported by the support 10 from the wire saw 3 passes through the known preliminary cleaning device and the secondary cleaning device. As a result, the slurry and the like are removed, and the support 10 is removed, whereby the wafer W is turned into a single wafer (step S2).
- Each single wafer W is kept in close contact with the cassette 12 using the cassette 12 or the like that has been used in the past when manual cleaning, peeling, and separation operations have been performed.
- a large number of wafers W are stored (step S3) and brought into the wafer separating / conveying apparatus 11 according to the factory or the like, and then the cassette 12 is mounted and supported on the cassette support 13 (step S4).
- step S5 the solenoid or the like is driven to lower the cassette support 13 and lower to the bottom dead center where the wafer W is completely immersed in the liquid tank 16 in which the liquid is previously stored.
- the fine bubble generating device 18 is driven to eject fine bubbles having an average bubble diameter of 20 ⁇ m from the nozzle 17, and the average bubble diameter of 20 ⁇ m between the wafers W while moving the nozzle 17 at a predetermined speed.
- Microbubbles (nanobubbles) B are allowed to enter (step S6).
- step S7 if the fine bubbles B enter between all the wafers W, the driving motor 31 is driven to rotate the rotating shaft 33 by the rotational movement of the endless belt 35, and the cassette is supported in conjunction with the rotation of the rotating arm 36.
- the body 13 is raised (step S7).
- the cassette W 13 is raised to a predetermined take-out position where the wafer W located at the uppermost position is located above the upper edge of the liquid tank 16, and stopped at the predetermined take-out position (step S8).
- Step S9 the take-out body 19 comes into contact with the wafer W located at the uppermost position, and the wafer W located at the uppermost position is taken out by the rotation of the take-out body 19 (Step S9), and is nip-conveyed by the transport body 20 (Step S10) It is transferred to the collection device 42 (step S11).
- steps S9 to S11 are also performed on the wafer W positioned at the top of the next and subsequent stages. If necessary (for example, every three wafers), the elevating device 14 moves the lower set support 13 over. Raise.
- the defect determination device 39 determines the defect of the wafer W (step S12), and if a defect has occurred, the defect wafer W is branched (bounced) by the branch device 41 ( In step S13), the wafers W in which no defect has occurred are sequentially recovered in the wafer recovery box 50 by the recovery device 42 (step S14).
- the wafer W cut into a large number by the wire saw 3 is directly separated and transported, but as shown in FIG. 10, it is equivalent to the fine bubble generator 18 shown in the present invention.
- a pre-cleaning tank (pre-cleaning device) 61 Used as a pre-cleaning tank (pre-cleaning device) 61, the wafer W stored in the cassette 12 through steps S1 to S3 is pre-cleaned and then separated and transferred via one or more transfer devices 62. It is also possible to configure as described above.
- the wafer W after being collected in the wafer collection box 50 may be automatically transferred by the multi-axis robot arm (not shown) together with the wafer collection box 50 and taken over to the apparatus for the next process (finish cleaning or mirror finishing). Is possible.
- the fine bubbles B are allowed to enter between the wafers W after being peeled from the support 10, thereby suppressing the sticking between the wafers W.
- the separation work can be performed efficiently.
- microbubbles B are in the separated state only by entering between the wafers W, it is possible to suppress the occurrence of breakage due to forcible separation (for example, pressure water injection).
- the wafer separation apparatus according to the present invention has been applied to a single crystal silicon wafer.
- the present invention can also be applied to a polycrystalline silicon wafer.
- the polycrystalline silicon wafer is cut into a rectangular polycrystalline silicon block using, for example, a band saw or the like, and then subjected to a finishing process such as dimensioning or etching. It is cut by the wire saw described above.
- a separation device can be provided.
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Abstract
Description
1a…シリコン端材
1b…シリコン端材
2…シリコンブロック
3…ワイヤソー
4…ワイヤ
5…ワイヤガイド
6…ワイヤ繰出しプーリ
7…ワイヤ巻取りプーリ
8…ワイヤ巻取り装置
9…取付体
10…支持板
11…ウエハ分離搬送装置
12…カセット
12a…下方開口
13…カセット支持体
13a…下方開口
14…昇降装置
15…回動装置
16…液槽
17…ノズル
18…微細気泡発生装置
19…取出体
20…搬送体
21…移動装置
22…カバー
23…シャフト
24…中間支持体
25…ガイドレール
26…ガイド板
27…固定シャフト
28…固定基板
29…支持基板
29a…下板
29b…上板
29c…縦板
30…軸支持部
31…駆動モータ
32…駆動プーリ
33…回転軸
34…従動プーリ
35…無端ベルト
36…回動アーム
37…ローラ体
38…搬送支持プレート
39…欠陥判定装置
40…搬送ベルトコンベア
41…分岐装置
42…回収装置
43…筺体
44…サーボモータ
45…駆動プーリ
46…従動プーリ
47…ベルト
48…ボールねじ
49…昇降体
50…ウエハ回収箱
51…ガイドレール
52…ガイド突起
53…連結部
61…予備洗浄槽(予備洗浄装置)
62…搬送装置
Claims (20)
- 枚葉化された多数枚のウエハを密着状態の縦置きで収納すると共に少なくとも上下に開放するカセットと、該カセットを着脱可能支持し且つ少なくとも上下に開放するカセット支持体と、該カセット支持体を前記カセットと一体に昇降させる昇降装置と、該昇降装置が下降した際に前記カセット支持体が前記カセットと一体に浸される液体を収容した液槽と、該液槽内に設置されて前記カセット支持体の下方から多数枚のウエハに向って微細気泡を噴出するノズルと、該ノズルから噴出される微細気泡を発生させる微細気泡発生装置と、を備えていることを特徴とするウエハ分離装置。
- 枚葉化された多数枚のウエハを密着状態の縦置きで収納すると共に少なくとも上下に開放するカセットと、該カセットを着脱可能支持し且つ少なくとも上下に開放するカセット支持体と、該カセット支持体を前記カセットと一体に昇降させる昇降装置と、該昇降装置に設置されて前記カセットに収納されたウエハを縦置き状態と横置き状態とに切り換えるように前記カセット支持体を前記カセットと一体に回動させる回動装置と、前記昇降装置が下降した際に前記カセット支持体が前記カセットと一体に浸される液体を収容した液槽と、該液槽内に設置されて前記カセット支持体の下方から多数枚のウエハに向って微細気泡を噴出するノズルと、該ノズルから噴出される微細気泡を発生させる微細気泡発生装置と、前記液槽内から上昇された横置き状態のウエハを最上位から取り出す取出体と、該取出体で取り出した最上位のウエハを搬送する搬送体と、を備えていることを特徴とするウエハ分離搬送装置。
- 前記搬送体は、その搬送経路上流側付近に配置されて搬送過程にあるウエハの欠陥を判定する欠陥判定装置と、該欠陥判定装置よりも搬送経路下流側に配置されて欠陥が存在していると判定されたウエハを搬送ルートとは別の廃棄ルートへと分岐させる分岐装置と、前記欠陥判定装置によって欠陥が存在していないと判定されたウエハを回収する回収装置と、を備えていることを特徴とする請求項2に記載のウエハ分離搬送装置。
- 前記ノズル又は前記カセット支持体をウエハの隣接方向に沿って移動させる移動装置を備えていることを特徴とする請求項1に記載のウエハ分離装置又は請求項2から請求項3に記載のウエハ分離搬送装置。
- 前記液槽内に浸っている状態で前記カセット支持体の下面を除く五面を覆うカバーを備えていることを特徴とする請求項1乃至請求項4の何れかに記載のウエハ分離装置又はウエハ分離搬送装置。
- 前記微細気泡発生装置は、マイナスに帯電された微細気泡を前記ノズルから噴出させることを特徴とする請求項1乃至請求項5の何れかに記載のウエハ分離装置又はウエハ分離搬送装置。
- 前記微細気泡発生装置は、シリコンインゴットを枚葉化する際に用いられたワイヤソーによって切断された際の溝幅以下の直径の微細気泡を前記ノズルから噴出させることを特徴とする請求項1乃至請求項6の何れかに記載のウエハ分離装置又はウエハ分離搬送装置。
- 前記微細気泡発生装置は、シリコンインゴットを枚葉化する際に用いられたワイヤソーのワイヤ径以下の直径の微細気泡を前記ノズルから噴出させることを特徴とする請求項1乃至請求項6の何れかに記載のウエハ分離装置又はウエハ分離搬送装置。
- 前記微細気泡発生装置は、100μm以下の直径の微細気泡を前記ノズルから噴出させることを特徴とする請求項1乃至請求項6の何れかに記載のウエハ分離装置又はウエハ分離搬送装置。
- 前記微細気泡発生装置は、平均20μm以下の直径の微細気泡を前記ノズルから噴出させることを特徴とする請求項1乃至請求項6の何れかに記載のウエハ分離装置又はウエハ分離搬送装置。
- 前記カセットには、シリコンインゴットを枚葉化する際に用いられたワイヤソーの走行方向と前記取出体及び前記搬送体によるウエハ取出・搬送方向とが同じとなるように、枚葉化された多数枚のウエハが密着状態の縦置きで収納されることを特徴とする請求項2乃至請求項10の何れかに記載のウエハ分離搬送装置。
- 前記回動装置は、前記カセット支持体を起立された際に、前記カセットに収納した縦置き状態でのウエハ上縁部が前記液槽の縦内壁面に近接するように前記カセット支持体を支持していることを特徴とする請求項2乃至請求項11の何れかに記載のウエハ分離搬送装置。
- 枚葉化された多数枚のウエハを少なくとも上下に開放するカセット内に密着状態の縦置きで収納する収納ステップと、少なくとも上下に開放するカセット支持体に前記カセットを装着支持させる装着支持ステップと、昇降装置を用いて前記カセット支持体を前記カセットと一体に下降させて縦置き状態のウエハを液槽内の液体に浸す下降ステップと、前記カセット支持体の下方から縦置き状態のウエハに向けて微細気泡発生装置で発生させた微細気泡を噴出して多数枚の各ウエハ内に微細気泡を侵入停滞させる微細気泡噴出ステップと、を備えていることを特徴とするウエハ分離方法。
- 枚葉化された多数枚のウエハを少なくとも上下に開放するカセット内に密着状態の縦置きで収納する収納ステップと、少なくとも上下に開放するカセット支持体に前記カセットを装着支持させる装着支持ステップと、昇降装置を用いて前記カセット支持体を前記カセットと一体に下降させて縦置き状態のウエハを液槽内の液体に浸す下降ステップと、前記カセット支持体の下方から縦置き状態のウエハに向けて微細気泡発生装置で発生させた微細気泡を噴出して多数枚の各ウエハ間に微細気泡を侵入停滞させる微細気泡噴出ステップと、回動装置を用いて多数枚の各ウエハ間に微細気泡を侵入停滞させたままのカセット支持体を前記カセットと一体に回動させて多数枚のウエハを横置きとする回動ステップと、前記昇降装置を用いてウエハを横置き状態としたまま前記カセット支持体を前記カセットと一体に上昇させて最上位に位置するウエハを前記液槽の少なくとも液面よりも上方へと引き上げる上昇ステップと、液面よりも上方に引き上げられた最上位のウエハを取り出す取り出しステップと、取り出し後のウエハを搬送する搬送ステップと、を備えていることを特徴とするウエハ分離搬送方法。
- 剥離後の枚葉化された多数枚のウエハを少なくとも上下に開放するカセット内に密着状態の縦置きで収納する収納ステップと、少なくとも上下に開放するカセット支持体に前記カセットを装着支持させる装着支持ステップと、昇降装置を用いて前記カセット支持体を前記カセットと一体に下降させて縦置き状態のウエハを予備洗浄する予備洗浄ステップと、予備洗浄後の前記カセットを取り出して搬送する取出・搬送ステップと、搬送した前記カセットを液槽内の液体に浸す下降ステップと、前記カセット支持体の下方から縦置き状態のウエハに向けて微細気泡発生装置で発生させた微細気泡を噴出して多数枚の各ウエハ間に微細気泡を侵入停滞させる微細気泡噴出ステップと、回動装置を用いて多数枚の各ウエハ間に微細気泡を侵入停滞させたままのカセット支持体を前記カセットと一体に回動させて多数枚のウエハを横置きとする回動ステップと、前記昇降装置を用いてウエハを横置き状態としたまま前記カセット支持体を前記カセットと一体に上昇させて最上位に位置するウエハを前記液槽の少なくとも液面よりも上方へと引き上げる上昇ステップと、液面よりも上方に引き上げられた最上位のウエハを取り出す取り出しステップと、取り出し後のウエハを搬送する搬送ステップと、を備えていることを特徴とするウエハ分離搬送方法。
- シリコンインゴットを支持板と一体に多数枚に切断する切断ステップと、切断後のシリコンインゴットを支持板から剥離して枚葉化する剥離ステップと、剥離後の枚葉化された多数枚のウエハを少なくとも上下に開放するカセット内に密着状態の縦置きで収納する収納ステップと、少なくとも上下に開放するカセット支持体に前記カセットを装着支持させる装着支持ステップと、昇降装置を用いて前記カセット支持体を前記カセットと一体に下降させて縦置き状態のウエハを液槽内の液体に浸す下降ステップと、前記カセット支持体の下方から縦置き状態のウエハに向けて微細気泡発生装置で発生させた微細気泡を噴出して多数枚の各ウエハ間に微細気泡を侵入停滞させる微細気泡噴出ステップと、回動装置を用いて多数枚の各ウエハ間に微細気泡を侵入停滞させたままのカセット支持体を前記カセットと一体に回動させて多数枚のウエハを横置きとする回動ステップと、前記昇降装置を用いてウエハを横置き状態としたまま前記カセット支持体を前記カセットと一体に上昇させて最上位に位置するウエハを前記液槽の少なくとも液面よりも上方へと引き上げる上昇ステップと、液面よりも上方に引き上げられた最上位のウエハを取り出す取り出しステップと、取り出し後のウエハを搬送する搬送ステップと、搬送されたウエハを太陽電池製造装置に移送する移送ステップと、を備えていることを特徴とする太陽電池用ウエハ分離搬送方法。
- 前記搬送ステップで搬送されたウエハをウエハ回収箱に回収自動回収する回収ステップと、回収後のウエハ回収箱を多軸ロボットアームを用いて次工程へと自動搬送する次工程搬送ステップと、を備えていることを特徴とする請求項14又は請求項15に記載のウエハ分離搬送方法又は請求項16に記載の太陽電池用ウエハ分離搬送方法。
- 前記移送ステップは、P型ウエハ又はN型ウエハを製造するためのテクスチャ処理を施すための化学エッチング装置に向けてウエハを移送することを特徴とする請求項16に記載の太陽電池用ウエハ分離搬送方法。
- 前記微細気泡噴出ステップでは、前記ノズル又は前記カセット支持体をウエハの隣接方向に沿って移動させることを特徴とする請求項12に記載のウエハ分離方法又は請求項13に記載のウエハ分離搬送方法又は請求項16又は請求項17に記載の太陽電池用ウエハ分離搬送方法。
- 前記微細気泡噴出ステップの開始前に、前記液槽内に浸っている状態の前記カセット支持体の下面を除く五面をカバーで覆うことを特徴とする請求項13乃至請求項18の何れかに記載のウエハ分離方法又はウエハ分離搬送方法又は太陽電池用ウエハ分離搬送方法。
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SG2011049798A SG172907A1 (en) | 2009-01-13 | 2010-01-12 | Wafer separating apparatus, wafer separating/transferring apparatus, wafer separating method, wafer separating/transferring method and solar cell wafer separating/transferring method |
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BRPI1007266A BRPI1007266A2 (pt) | 2009-01-13 | 2010-01-12 | aparelhos e métodos para separação, e para separação e transferência de pastilha. |
AU2010205243A AU2010205243A1 (en) | 2009-01-13 | 2010-01-12 | Wafer separating apparatus, wafer separating/transferring apparatus, wafer separating method, wafer separating/transferring method and solar cell wafer separating/transferring method |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012028438A (ja) * | 2010-07-21 | 2012-02-09 | Air Water Inc | ウエハの枚葉化方法および装置 |
WO2013024741A1 (ja) * | 2011-08-12 | 2013-02-21 | 株式会社 安永 | ウェハ分離装置及びこれを用いたウェハの製造方法 |
KR101271917B1 (ko) * | 2011-06-28 | 2013-06-05 | 주식회사 포스코 | 오존 마이크로 버블을 이용한 세척방법 |
JP2013149703A (ja) * | 2012-01-18 | 2013-08-01 | Nippon Steel & Sumikin Fine Technology Co Ltd | ウエハ搬送装置 |
JP2013161811A (ja) * | 2012-02-01 | 2013-08-19 | Shin Etsu Chem Co Ltd | 基板洗浄方法及び基板洗浄装置 |
CN103811374A (zh) * | 2012-11-06 | 2014-05-21 | 沈阳芯源微电子设备有限公司 | 一种晶圆浸泡装置 |
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7651666B2 (en) | 2006-04-20 | 2010-01-26 | S.C. Johnson & Son, Inc. | Air treatment device with reservoir refill |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139159A (ja) * | 1994-11-11 | 1996-05-31 | Kaijo Corp | 基板自動処理装置 |
JPH09237770A (ja) | 1995-12-25 | 1997-09-09 | Nippei Toyama Corp | ウエハの処理システム |
JPH11214336A (ja) | 1998-01-21 | 1999-08-06 | Sugino Mach Ltd | 半導体ウエハ洗浄方法及び装置 |
JPH11233461A (ja) | 1998-02-12 | 1999-08-27 | Sugino Mach Ltd | 半導体ウエハ洗浄装置 |
JP2000311877A (ja) * | 1999-04-26 | 2000-11-07 | Nippon Electric Glass Co Ltd | 板状体の洗浄方法及び洗浄装置 |
JP2003100703A (ja) * | 2001-09-26 | 2003-04-04 | Seiko Epson Corp | 液体処理方法、液体処理装置、及び、フラットパネル表示装置の製造方法 |
JP2006310456A (ja) * | 2005-04-27 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | パーティクル除去方法および基板処理装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5950643A (en) | 1995-09-06 | 1999-09-14 | Miyazaki; Takeshiro | Wafer processing system |
US5983907A (en) * | 1997-08-05 | 1999-11-16 | Seh America, Inc. | Method of drying semiconductor wafers using hot deionized water and infrared drying |
DE19904834A1 (de) * | 1999-02-07 | 2000-08-10 | Acr Automation In Cleanroom | Vorrichtung zum Ablösen, Vereinzeln und Einlagern von dünnen, bruchempfindlichen scheibenförmigen Substraten |
TW200303581A (en) * | 2002-02-28 | 2003-09-01 | Tech Ltd A | Method and apparatus for cleaning and drying semiconductor wafer |
US6875289B2 (en) * | 2002-09-13 | 2005-04-05 | Fsi International, Inc. | Semiconductor wafer cleaning systems and methods |
US20040050408A1 (en) * | 2002-09-13 | 2004-03-18 | Christenson Kurt K. | Treatment systems and methods |
ATE461799T1 (de) * | 2005-07-01 | 2010-04-15 | Rec Scanwafer As | Verringerung von anziehungskräften zwischen siliziumscheiben |
DE102006011870B4 (de) * | 2006-03-15 | 2010-06-10 | Rena Gmbh | Vereinzelungsvorrichtung und Verfahren zur stückweisen Bereitstellung plattenförmiger Gegenstände |
JP2007258512A (ja) * | 2006-03-24 | 2007-10-04 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
EP2122676B1 (en) | 2006-12-19 | 2013-02-27 | REC Wafer Pte. Ltd. | Method and device for separation of silicon wafers |
-
2010
- 2010-01-12 US US13/144,198 patent/US8863957B2/en not_active Expired - Fee Related
- 2010-01-12 AU AU2010205243A patent/AU2010205243A1/en not_active Abandoned
- 2010-01-12 BR BRPI1007266A patent/BRPI1007266A2/pt not_active IP Right Cessation
- 2010-01-12 CN CN201080004280.3A patent/CN102272913A/zh active Pending
- 2010-01-12 JP JP2010546622A patent/JP5498398B2/ja not_active Expired - Fee Related
- 2010-01-12 NZ NZ593758A patent/NZ593758A/xx not_active IP Right Cessation
- 2010-01-12 KR KR1020117018739A patent/KR101616765B1/ko not_active IP Right Cessation
- 2010-01-12 WO PCT/JP2010/050233 patent/WO2010082567A1/ja active Application Filing
- 2010-01-12 EP EP20100731236 patent/EP2388809A4/en not_active Withdrawn
- 2010-01-12 SG SG2011049798A patent/SG172907A1/en unknown
-
2014
- 2014-09-16 US US14/487,398 patent/US20150004741A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139159A (ja) * | 1994-11-11 | 1996-05-31 | Kaijo Corp | 基板自動処理装置 |
JPH09237770A (ja) | 1995-12-25 | 1997-09-09 | Nippei Toyama Corp | ウエハの処理システム |
JPH11214336A (ja) | 1998-01-21 | 1999-08-06 | Sugino Mach Ltd | 半導体ウエハ洗浄方法及び装置 |
JPH11233461A (ja) | 1998-02-12 | 1999-08-27 | Sugino Mach Ltd | 半導体ウエハ洗浄装置 |
JP2000311877A (ja) * | 1999-04-26 | 2000-11-07 | Nippon Electric Glass Co Ltd | 板状体の洗浄方法及び洗浄装置 |
JP2003100703A (ja) * | 2001-09-26 | 2003-04-04 | Seiko Epson Corp | 液体処理方法、液体処理装置、及び、フラットパネル表示装置の製造方法 |
JP2006310456A (ja) * | 2005-04-27 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | パーティクル除去方法および基板処理装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2388809A4 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012028438A (ja) * | 2010-07-21 | 2012-02-09 | Air Water Inc | ウエハの枚葉化方法および装置 |
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JP2013149703A (ja) * | 2012-01-18 | 2013-08-01 | Nippon Steel & Sumikin Fine Technology Co Ltd | ウエハ搬送装置 |
JP2013161811A (ja) * | 2012-02-01 | 2013-08-19 | Shin Etsu Chem Co Ltd | 基板洗浄方法及び基板洗浄装置 |
CN103811374A (zh) * | 2012-11-06 | 2014-05-21 | 沈阳芯源微电子设备有限公司 | 一种晶圆浸泡装置 |
TWI564951B (zh) * | 2014-10-30 | 2017-01-01 | 台灣茂矽電子股份有限公司 | 蝕刻裝置及蝕刻方法 |
CN106784138A (zh) * | 2016-12-05 | 2017-05-31 | 浙江尚越新能源开发有限公司 | 一种太阳能电池切割***的切割装置 |
JP2022087065A (ja) * | 2020-11-30 | 2022-06-09 | セメス カンパニー,リミテッド | 基板処理装置 |
JP7339317B2 (ja) | 2020-11-30 | 2023-09-05 | セメス カンパニー,リミテッド | 基板処理装置 |
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JPWO2010082567A1 (ja) | 2012-07-05 |
US8863957B2 (en) | 2014-10-21 |
JP5498398B2 (ja) | 2014-05-21 |
EP2388809A4 (en) | 2014-07-09 |
BRPI1007266A2 (pt) | 2016-02-10 |
EP2388809A1 (en) | 2011-11-23 |
KR20110104994A (ko) | 2011-09-23 |
AU2010205243A1 (en) | 2011-07-21 |
SG172907A1 (en) | 2011-08-29 |
NZ593758A (en) | 2012-11-30 |
US20120006726A1 (en) | 2012-01-12 |
KR101616765B1 (ko) | 2016-05-02 |
US20150004741A1 (en) | 2015-01-01 |
CN102272913A (zh) | 2011-12-07 |
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