WO2010081661A3 - Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level - Google Patents

Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level Download PDF

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Publication number
WO2010081661A3
WO2010081661A3 PCT/EP2010/000076 EP2010000076W WO2010081661A3 WO 2010081661 A3 WO2010081661 A3 WO 2010081661A3 EP 2010000076 W EP2010000076 W EP 2010000076W WO 2010081661 A3 WO2010081661 A3 WO 2010081661A3
Authority
WO
WIPO (PCT)
Prior art keywords
solution
photovoltaic cell
power density
sheet resistance
density level
Prior art date
Application number
PCT/EP2010/000076
Other languages
French (fr)
Other versions
WO2010081661A2 (en
Inventor
Joannes T.V. Hoogboom
Johannes A.E. Oosterholt
Sabrina Ritmeijer
Lucas M.H. Groenewoud
Original Assignee
Mallinckrodt Baker Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to MX2011007413A priority Critical patent/MX2011007413A/en
Application filed by Mallinckrodt Baker Bv filed Critical Mallinckrodt Baker Bv
Priority to RU2011134068/28A priority patent/RU2011134068A/en
Priority to JP2011545669A priority patent/JP2012515444A/en
Priority to SG2011050853A priority patent/SG172973A1/en
Priority to EP10716465A priority patent/EP2387801A2/en
Priority to AU2010205945A priority patent/AU2010205945A1/en
Priority to CN201080004496.XA priority patent/CN102282682B/en
Priority to CA2749836A priority patent/CA2749836A1/en
Priority to BRPI1006176A priority patent/BRPI1006176A2/en
Publication of WO2010081661A2 publication Critical patent/WO2010081661A2/en
Publication of WO2010081661A3 publication Critical patent/WO2010081661A3/en
Priority to IL213936A priority patent/IL213936A0/en
Priority to ZA2011/05863A priority patent/ZA201105863B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • C11D2111/22—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least one of (a) the sheet resistance of the wafer and (b) the power density level of the photovoltaic cell made from said wafer. The treatment solution being an acidic treatment solution of a buffered oxide etch (BOE) solution of at least one tetraalkylammonium hydroxide, acetic acid, at least one non-ionic surfactant, at least one metal chelating agent, a metal free source of ammonia, a metal free source of fluoride ions, and water, mixed with an oxidizer solution and optionally water.
PCT/EP2010/000076 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level WO2010081661A2 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
AU2010205945A AU2010205945A1 (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
RU2011134068/28A RU2011134068A (en) 2009-01-14 2010-01-11 METHOD FOR INCREASING SURFACE RESISTANCE OF PLATE AND / OR POWER DENSITY LEVEL OF PHOTOELECTRIC ELEMENT
JP2011545669A JP2012515444A (en) 2009-01-14 2010-01-11 Solution for increasing the sheet resistance of a wafer and / or the output density of a photovoltaic cell
SG2011050853A SG172973A1 (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
EP10716465A EP2387801A2 (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
MX2011007413A MX2011007413A (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level.
CN201080004496.XA CN102282682B (en) 2009-01-14 2010-01-11 Increase the solution of wafer sheet resistance and/or photovoltaic cell power density level
CA2749836A CA2749836A1 (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
BRPI1006176A BRPI1006176A2 (en) 2009-01-14 2010-01-11 solution to increase chip plate resistance and / or photovoltaic cell energy density level
IL213936A IL213936A0 (en) 2009-01-14 2011-07-05 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
ZA2011/05863A ZA201105863B (en) 2009-01-14 2011-08-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14447909P 2009-01-14 2009-01-14
US61/144,479 2009-01-14
US22568509P 2009-07-15 2009-07-15
US61/225,685 2009-07-15

Publications (2)

Publication Number Publication Date
WO2010081661A2 WO2010081661A2 (en) 2010-07-22
WO2010081661A3 true WO2010081661A3 (en) 2010-10-07

Family

ID=42272664

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/000076 WO2010081661A2 (en) 2009-01-14 2010-01-11 Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level

Country Status (14)

Country Link
EP (1) EP2387801A2 (en)
JP (1) JP2012515444A (en)
KR (1) KR20110105396A (en)
CN (1) CN102282682B (en)
AU (1) AU2010205945A1 (en)
BR (1) BRPI1006176A2 (en)
CA (1) CA2749836A1 (en)
IL (1) IL213936A0 (en)
MX (1) MX2011007413A (en)
RU (1) RU2011134068A (en)
SG (1) SG172973A1 (en)
TW (1) TW201036058A (en)
WO (1) WO2010081661A2 (en)
ZA (1) ZA201105863B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011050136A1 (en) 2010-09-03 2012-03-08 Schott Solar Ag Process for the wet-chemical etching of a silicon layer
EP2514799A1 (en) 2011-04-21 2012-10-24 Rohm and Haas Electronic Materials LLC Improved polycrystalline texturing composition and method
DE102011103538A1 (en) 2011-06-07 2012-12-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for doping e.g. p-type semiconductor substrate while manufacturing crystalline silicon solar cell, involves utilizing doped silicon as sources, where doped silicon is provided with part of silicon-, hydrogen-atoms of specified range
CN113980580B (en) * 2021-12-24 2022-04-08 绍兴拓邦新能源股份有限公司 Alkali etching polishing method for monocrystalline silicon wafer

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4113551A (en) * 1976-11-19 1978-09-12 International Business Machines Corporation Polycrystalline silicon etching with tetramethylammonium hydroxide
US5705089A (en) * 1992-03-11 1998-01-06 Mitsubishi Gas Chemical Company, Inc. Cleaning fluid for semiconductor substrate
US20010056052A1 (en) * 1999-04-20 2001-12-27 Nec Corporation Cleaning liquid
US20030153170A1 (en) * 2001-11-14 2003-08-14 Matsushita Electric Industrial Co., Ltd. Method for cleaning semiconductor device and method for fabricating the same
WO2003104901A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning and arc remover compositions
JP2005129714A (en) * 2003-10-23 2005-05-19 Sharp Corp Manufacturing method of solar cell
JP2005217260A (en) * 2004-01-30 2005-08-11 Sharp Corp Method for manufacturing silicon substrate and solar cell
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
WO2008157345A2 (en) * 2007-06-13 2008-12-24 Advanced Technology Materials, Inc. Wafer reclamation compositions and methods

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4113551A (en) * 1976-11-19 1978-09-12 International Business Machines Corporation Polycrystalline silicon etching with tetramethylammonium hydroxide
US5705089A (en) * 1992-03-11 1998-01-06 Mitsubishi Gas Chemical Company, Inc. Cleaning fluid for semiconductor substrate
US20010056052A1 (en) * 1999-04-20 2001-12-27 Nec Corporation Cleaning liquid
US20030153170A1 (en) * 2001-11-14 2003-08-14 Matsushita Electric Industrial Co., Ltd. Method for cleaning semiconductor device and method for fabricating the same
WO2003104901A2 (en) * 2002-06-07 2003-12-18 Mallinckrodt Baker Inc. Microelectronic cleaning and arc remover compositions
JP2005129714A (en) * 2003-10-23 2005-05-19 Sharp Corp Manufacturing method of solar cell
JP2005217260A (en) * 2004-01-30 2005-08-11 Sharp Corp Method for manufacturing silicon substrate and solar cell
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
WO2008157345A2 (en) * 2007-06-13 2008-12-24 Advanced Technology Materials, Inc. Wafer reclamation compositions and methods

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JEON M S ET AL: "Performance improvement in simplified processing for screen-printed mc-Si solar cells", CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALIST CONFERENCE (IEEE CAT. NO. 05CH37608) IEEE PISCATAWAY, NJ, USA,, 3 January 2005 (2005-01-03), pages 1096 - 1099, XP010822959, ISBN: 978-0-7803-8707-2 *

Also Published As

Publication number Publication date
EP2387801A2 (en) 2011-11-23
AU2010205945A1 (en) 2011-09-01
MX2011007413A (en) 2011-07-21
TW201036058A (en) 2010-10-01
CN102282682A (en) 2011-12-14
BRPI1006176A2 (en) 2019-09-24
CN102282682B (en) 2016-07-06
JP2012515444A (en) 2012-07-05
SG172973A1 (en) 2011-08-29
ZA201105863B (en) 2012-04-25
IL213936A0 (en) 2011-07-31
RU2011134068A (en) 2013-02-20
WO2010081661A2 (en) 2010-07-22
CA2749836A1 (en) 2010-07-22
KR20110105396A (en) 2011-09-26

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