WO2010073286A1 - Capteur à infrarouges - Google Patents

Capteur à infrarouges Download PDF

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Publication number
WO2010073286A1
WO2010073286A1 PCT/JP2008/003885 JP2008003885W WO2010073286A1 WO 2010073286 A1 WO2010073286 A1 WO 2010073286A1 JP 2008003885 W JP2008003885 W JP 2008003885W WO 2010073286 A1 WO2010073286 A1 WO 2010073286A1
Authority
WO
WIPO (PCT)
Prior art keywords
infrared sensor
infrared
protruding base
sensor according
base material
Prior art date
Application number
PCT/JP2008/003885
Other languages
English (en)
Japanese (ja)
Inventor
藤本健二郎
前田孝則
河野高博
Original Assignee
パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2008/003885 priority Critical patent/WO2010073286A1/fr
Publication of WO2010073286A1 publication Critical patent/WO2010073286A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0815—Light concentrators, collectors or condensers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials

Definitions

  • the present invention relates to an infrared sensor such as a pyroelectric sensor, a thermopile, and a bolometer in a MEMS (micro-electro-mechanical system) sensor.
  • an infrared sensor such as a pyroelectric sensor, a thermopile, and a bolometer in a MEMS (micro-electro-mechanical system) sensor.
  • each detection element has a light receiving portion disposed so as to float above a concave portion formed in the substrate, and a beam that supports the light receiving portion on the substrate.
  • the light receiving surface is disposed so as to be orthogonal to the optical axis, that is, the light receiving surface faces the direction of the optical axis of infrared rays.
  • the conventional infrared sensor has a membrane structure in which the light receiving portion is floated from the substrate by the beam in order to increase the light receiving area and suppress the heat conduction from the light receiving portion to the substrate. For this reason, when manufacturing an infrared sensor (detection element), it is necessary to provide a sacrificial layer or to dig deeply, and there is a problem that processing is difficult and cumbersome and high in cost.
  • An infrared sensor includes a substrate, a protruding base portion protruding on the substrate and extending in an infrared incident direction, and an infrared detection portion provided on at least the upper side surface of the protruding base portion. It is characterized by that.
  • the protruding base portion provided with the infrared detecting portion extends in the direction of incidence of infrared rays, this portion can be easily formed by etching (deep etching) or the like. Moreover, since the infrared detection part is provided in the at least upper side surface of the protrusion base material part, infrared rays can fully be received. And since the protrusion base material part is the structure protrudingly provided on the board
  • the protruding base material portion is preferably formed in a rib shape with respect to the substrate, or the protruding base material portion is preferably formed in a columnar shape with respect to the substrate.
  • the strength of the protruding base portion itself can be maintained even if the protruding base portion is formed thin.
  • the substrate and the protruding base portion are integrally formed of the same material.
  • the protruding base material portion can be easily formed from the substrate by etching or the like.
  • the tip of the protruding base material portion is formed at an acute angle.
  • the protruding dimension of the protruding base part from the substrate is larger than the thickness dimension of the protruding base part.
  • the thickness of the protruding base material portion is 1 ⁇ m or less.
  • the heat capacity of the protruding substrate portion can be reduced by forming the protruding substrate portion long or thinly, and the heat of the infrared detecting portion escapes to the protruding substrate portion. (Heat conduction) can be suppressed.
  • a heat insulating layer is formed between the protruding base portion and the infrared detecting portion, or that the protruding base portion is formed of a heat insulating material.
  • the protruding base portion is made of silicon oxide or silicon having a silicon oxide film on the surface.
  • a heat insulating film (heat insulating layer) can be easily formed on the protruding base material portion.
  • the protruding base material itself can be easily changed to a heat insulating material. Thereby, it can fully suppress that the heat
  • an infrared absorption layer is formed on the surface of the infrared detection unit.
  • the infrared absorption rate of the infrared detection unit can be increased.
  • the infrared detector is preferably formed by laminating an outer electrode layer, a pyroelectric layer, and an inner electrode layer.
  • the pyroelectric layer and the inner electrode layer are preferably made of the same crystal structure material.
  • a buffer layer is formed between the protruding base portion and the inner electrode layer.
  • the pyroelectric layer is preferably formed such that the upper part is thick and the lower part is thin. Similarly, the pyroelectric layer is preferably formed such that the upper part is thin and the lower part is thick.
  • the pyroelectric layer is formed with C-axis orientation with respect to the surface of the protruding base material portion.
  • the infrared detection unit can efficiently convert the temperature change due to infrared rays into an electrical signal, and the detection sensitivity of the infrared detection unit can be improved.
  • the infrared sensor of the present invention since the protruding base material portion provided with the infrared detection portion is erected on the substrate and extends in the incident direction of infrared light, the infrared light is efficiently transmitted. While being able to absorb, the heat conduction from an infrared detection part can be suppressed. Therefore, the detection sensitivity can be improved and the device can be manufactured easily and with a high yield.
  • This infrared sensor is a so-called pyroelectric infrared sensor, which is a MEMS (micro-electro-mechanical system) sensor manufactured by microfabrication technology using silicon (wafer) or the like as a material. And this infrared sensor comprises the pixel (element) of the infrared detection apparatus commercialized by the array form.
  • MEMS micro-electro-mechanical system
  • the infrared sensor 1 includes a substrate 2, a protruding base material portion 3 that protrudes from the substrate 2 and has a plurality of rib-shaped element base materials 4 assembled in a lattice shape, And an infrared detecting unit 5 provided on the surface of the protruding base member 3.
  • substrate 2 and the protrusion base material part 3 are formed by etching a silicon substrate, and the some vertical base material part 4a and the some horizontal base material part 4b which comprise the some element base material part 4 are the same. And have the same thickness. In the etching, a portion of the substrate 2 may be left so as to surround the protruding base material portion 3.
  • Each element base material part (projection base material part 3) 4 extends long in the incident direction of infrared rays and is formed as thin as possible. That is, it is preferable that the thickness of the element base material portion (projecting base material portion 3) 4 is 1 ⁇ m or less. At least the projecting dimension of the element substrate part (projecting substrate part 3) 4 is made larger than the thickness dimension.
  • a heat insulating layer 11 (thermal insulating layer) is formed on the surface of the protruding base material portion 3. This heat insulation layer 11 is formed by thermally oxidizing (SiO 2 ) the protruding base material portion 3.
  • a low thermal conductive layer may be formed on the surface of the protruding base material portion 3 by forming a film with a material having low thermal conductivity.
  • the protruding base material portion 3 in the embodiment is configured by assembling four vertical base material portions 4a and three horizontal base material portions 4b in a lattice shape
  • the base material portions 4a and 4b The number of sheets is arbitrary.
  • the mutual separation dimension and the protruding dimension of the plurality of element base parts 4 are also arbitrary.
  • the projecting base material portion 3 may be formed by arranging the element base material portions 4 in a honeycomb shape in addition to the lattice shape. That is, in consideration of the strength of the protruding base material portion 3, it is preferable to assemble a plurality of element base material portions 4 in a mesh shape.
  • each element base material part projection base material part 3 4 at an acute angle (in a cross-sectional direction) (refer FIG. 3). If it does in this way, the reflection of the infrared rays from the front end surface of the protrusion base material part 3, ie, the front end surface of the infrared detection part 5, can be prevented, and the infrared absorption factor of the infrared detection part 5 can be raised.
  • the infrared detection unit 5 is configured by laminating an inner electrode layer 13, a pyroelectric layer 14, and an outer electrode layer 15 in this order on the protruding base part (element base part 4) 3. .
  • the infrared detecting unit 5 is preferably formed only on the upper side surface of the protruding base part 3 with respect to the protruding base part 3. However, from the relationship of the film forming process, the surface of the protruding base part 3 and the surface of the substrate 2 ( It is formed over the gap groove 17).
  • the pyroelectric layer 14 is formed of, for example, PZT (Pb (Zr, Ti) O 3 ), SBT (SrBi 2 Ta 2 O 9 ), BIT (Bi 4 Ti 3 O 12 ), LT (LiTaO 3 ), LN (LiNbO 3 ). ), BTO (BaTiO 3 ), BST (BaSrTiO 3 ) and the like.
  • the pyroelectric layer 14 is preferably made of a material having a low dielectric constant in consideration of detection sensitivity.
  • the upper part of the infrared detection unit 5 is highly crystallized by post-annealing, and further, the polarization orientation is changed. The C-axis orientation is preferable with respect to the surface of the protruding base material portion 3. By comprising in this way, the detection sensitivity of the pyroelectric layer 14 can be raised.
  • the inner electrode layer 13 is made of, for example, SRO, Nb-STO, LNO (LaNiO 3 ), or the like. In this case, considering the formation of the pyroelectric layer 14 on the inner electrode layer 13, the inner electrode layer 13 is preferably made of the same material as that of the pyroelectric layer 14.
  • the inner electrode layer 13 may be made of general Pt, Ir, Ti or the like.
  • An infrared absorption layer (not shown) may be provided on the surface of the outer electrode layer 15 to increase the infrared absorption rate. In this case, the infrared absorption layer is made of Au-Black or the like.
  • the infrared detection unit 5 may be formed only on the upper portion of the protruding base material portion (element base material portion 4) 5 (see FIG. 4). For example, while the substrate 2 is rotated, the inner electrode layer 13 and the outer electrode layer 15 are formed obliquely, so that the infrared detection unit 5 is formed only on the upper portion of the protruding base member 3.
  • each gap groove (trench) 17 has a concave mirror shape for irregularly reflecting incident infrared rays. (FIG. 5 (a)) and an uneven shape (FIG. 5 (b)).
  • infrared rays that reach the groove bottom of the gap groove 17 without being absorbed by the infrared detection unit 5 can be diffusely reflected by the groove bottom and absorbed by the infrared detection unit 5, thereby increasing the infrared absorption rate. it can.
  • a reflective layer that reflects incident infrared rays may be formed on the bottom of the gap groove 17.
  • the infrared sensor 1 of the embodiment is manufactured by a semiconductor microfabrication technique using a silicon substrate (wafer).
  • etching deep etching: DeepRIE
  • a thermal oxidation process is performed to form an oxide film, that is, a heat insulating layer 11 on the surfaces of the protruding base material portion 3 and the substrate 2 (thermal oxidation step: FIG. 6B).
  • the infrared detection unit 5 is formed on the surfaces of the protruding base member 2 and the substrate 3 in the order of the inner electrode layer 13, the pyroelectric layer 14, and the outer electrode layer 15 by, for example, epitaxial growth (CVD) (composition). Film process: FIG. 6 (c)).
  • CVD epitaxial growth
  • Film process: FIG. 6 (c) it is preferable to provide a buffer layer (not shown) between the protruding base portion 3 and the inner electrode layer 13 in order to perform high-quality film formation.
  • the buffer layer for example YSZ, CeO 2, Al 2 O 3, STO is preferred.
  • the substrate 2 may be heated from below to form a thick pyroelectric layer 14 on the bottom side of the gap groove 17. Thereby, the electrostatic capacitance by the side of the board
  • a polarization process is performed in which a high voltage is applied between the inner electrode layer 13 and the outer electrode layer 15 so that the crystals of the pyroelectric layer 14 are perpendicular to the surface of the protruding base material portion 3. May be performed.
  • post-annealing may be performed on the upper portion of the infrared detector 5 to promote crystallization of the pyroelectric layer 14. Thereby, the detection sensitivity of the infrared detection part 5 can be improved.
  • the protruding base part 3 provided with the infrared detection part 5 extends in the direction of incidence of infrared rays, this part can be easily formed by etching (deep etching). . Moreover, since the infrared detection part 5 is provided in the whole region of the protrusion base material part 3, it can fully receive infrared rays. Furthermore, since the protruding base part 3 is configured to protrude on the substrate 2, the heat transfer path of the protruding base part 3 can be suppressed, and the heat conduction from the infrared detecting part 5 can be suppressed. it can.
  • the protruding base material portion 3 is configured by assembling a plurality of rib-shaped element base material portions 4 in a mesh shape (lattice shape), even if the element base material portion 4 is thin, the protruding base material portion The whole part 3 can be given strength. Therefore, according to the infrared sensor 1 of the present embodiment, the detection sensitivity can be improved, and it can be easily manufactured with a high yield.
  • the infrared sensor 1A of the second embodiment includes a substrate 2, a plurality of rib-shaped protruding base portions 3A protruding on the substrate 2, and a plurality of infrared detections provided on the surface of each protruding base portion 3A. Part 5A.
  • the plurality of rib-shaped protruding base portions 3A are arranged in a stripe shape. Also in this case, the substrate 2 and the protruding base portion 3A are formed by etching a silicon substrate, and the plurality of protruding base portions 3A have the same protruding dimensions and the same thickness.
  • the number of protruding base material portions 3A in this embodiment is arbitrary.
  • the mutually spaced dimension and the protruding dimension of the plurality of protruding base material portions 3A are also arbitrary.
  • the stripe may be curved (waveform).
  • each protruding base part 3A and the cross-sectional structure of each infrared detection part 5A are also the same as those of the first embodiment (see FIG. 2), and the description thereof is omitted here.
  • the groove bottom of each gap groove (trench) 17A has a concave mirror shape (see FIG. 5A) that irregularly reflects incident infrared rays, as in the first embodiment. )) Or a concavo-convex shape (see FIG. 5B).
  • the etching process see FIG.
  • the infrared sensor 1A is created.
  • the infrared detector 5A can be easily formed in the film formation process.
  • the protruding base portion 3A provided with the infrared detecting portion 5A extends in the direction of incidence of infrared rays, so that this portion can be easily formed by etching (deep etching). .
  • the infrared detection part 5A is provided in the whole area
  • the protruding base portion 3A is configured to protrude on the substrate 2, the heat transfer path of the protruding base portion 3A can be suppressed, and the heat conduction from the infrared detecting portion 5A can be suppressed. it can. Therefore, it is possible to improve the detection sensitivity and to easily manufacture with good yield.
  • the infrared sensor 1B according to the third embodiment includes a substrate 2, a plurality of columnar protruding base portions 3B protruding on the substrate 2, and a plurality of infrared detections provided on the surface of each protruding base portion 3B. Part 5B.
  • the plurality of columnar protruding base portions 3B are arranged in a dot matrix shape.
  • the substrate 2 and the protruding base part 3B are formed by etching a silicon substrate, and the plurality of protruding base parts 3B are arranged in a staggered manner in addition to a matrix shape, etc. It is preferable to arrange in an archipelago shape. Further, each protruding base material portion 3B may be cylindrical.
  • each projecting base material portion 3B and the cross-sectional structure of each infrared detection portion 5B are also the same as those in the first embodiment (see FIG. 2), and description thereof is omitted here.
  • the groove bottom of the gap region groove 18 has a concave mirror shape for irregularly reflecting incident infrared rays (see FIG. 5A), as in the first embodiment. ) Or an uneven shape (see FIG. 5B).
  • the etching process see FIG. 6A
  • the thermal oxidation process see FIG.
  • the infrared sensor 1B is created.
  • the plurality of protruding base material portions 3B are in the form of standing, it is possible to easily form the infrared detecting portion 5B in the film forming process.
  • the protruding base material portion 3B provided with the infrared detecting portion 5B extends in the direction of incidence of infrared rays, this portion can be easily formed by etching (deep etching). . Moreover, since the infrared detection part 5B is provided in the whole area
  • This embodiment is a so-called bolometer, which has a pair of beam-like connecting portions 21 and 21 on both sides of a lattice frame-like protruding base material portion 3C, and the pair of connecting portions 21 and 21 are connected to the substrate 2.
  • the protruding base material portion 3C is formed by assembling a plurality of element base material portions 4 including a plurality of rib-like vertical base material portions 4a and a plurality of rib-like horizontal base material portions 4b in a lattice frame shape.
  • the infrared detection part 5C is formed in the upper half part of 3 C of protrusion base material parts (element base material part 4), and is extended to the part of both the connection parts 21 and 21.
  • FIG. The infrared detector 5C is made of polysilicon or vanadium oxide. Also in this embodiment, the detection sensitivity can be improved and the manufacturing can be easily performed with a high yield.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

L'invention concerne un capteur à infrarouges capable d'atteindre une sensibilité de détection améliorée, et facile à fabriquer en grande série. Le capteur à infrarouges est doté d'un substrat (2), d'une section saillante (3) en matériau de base aménagée de manière saillante sur le substrat (2) et s'étendant dans la direction d'incidence d'une lumière infrarouge, et d'une section (5) de détection d'infrarouges aménagée sur la surface latérale de la partie supérieure au moins de la section saillante (3) en matériau de base. La section (5) de détection d'infrarouges est constituée en superposant une couche (15) d'électrode extérieure, une couche pyroélectrique (14) et une couche (13) d'électrode intérieure.
PCT/JP2008/003885 2008-12-22 2008-12-22 Capteur à infrarouges WO2010073286A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/003885 WO2010073286A1 (fr) 2008-12-22 2008-12-22 Capteur à infrarouges

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/003885 WO2010073286A1 (fr) 2008-12-22 2008-12-22 Capteur à infrarouges

Publications (1)

Publication Number Publication Date
WO2010073286A1 true WO2010073286A1 (fr) 2010-07-01

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ID=42286960

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Application Number Title Priority Date Filing Date
PCT/JP2008/003885 WO2010073286A1 (fr) 2008-12-22 2008-12-22 Capteur à infrarouges

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WO (1) WO2010073286A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6296536U (fr) * 1985-12-06 1987-06-19
JPH01100426A (ja) * 1987-10-14 1989-04-18 Matsushita Electric Ind Co Ltd アレイ伏焦電形赤外検出器
JPH07190854A (ja) * 1993-12-25 1995-07-28 Nippondenso Co Ltd 赤外線センサ
JPH0829262A (ja) * 1994-05-13 1996-02-02 Matsushita Electric Ind Co Ltd 放射検出器
JP2001356046A (ja) * 2000-06-13 2001-12-26 Denso Corp 赤外線検出装置
JP2003004527A (ja) * 2001-06-22 2003-01-08 Horiba Ltd 多素子赤外線センサ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6296536U (fr) * 1985-12-06 1987-06-19
JPH01100426A (ja) * 1987-10-14 1989-04-18 Matsushita Electric Ind Co Ltd アレイ伏焦電形赤外検出器
JPH07190854A (ja) * 1993-12-25 1995-07-28 Nippondenso Co Ltd 赤外線センサ
JPH0829262A (ja) * 1994-05-13 1996-02-02 Matsushita Electric Ind Co Ltd 放射検出器
JP2001356046A (ja) * 2000-06-13 2001-12-26 Denso Corp 赤外線検出装置
JP2003004527A (ja) * 2001-06-22 2003-01-08 Horiba Ltd 多素子赤外線センサ

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