WO2010050501A1 - 半導体発光素子およびその製造方法、発光装置 - Google Patents
半導体発光素子およびその製造方法、発光装置 Download PDFInfo
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- WO2010050501A1 WO2010050501A1 PCT/JP2009/068488 JP2009068488W WO2010050501A1 WO 2010050501 A1 WO2010050501 A1 WO 2010050501A1 JP 2009068488 W JP2009068488 W JP 2009068488W WO 2010050501 A1 WO2010050501 A1 WO 2010050501A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Definitions
- the present invention relates to a semiconductor light emitting element, a method for manufacturing the same, and a light emitting device.
- a white light emitting device for example, a white light emitting device (generally white light emitting device) that obtains white light (white light emission spectrum) by combining a semiconductor light emitting element that emits blue light or ultraviolet light and a phosphor. (Referred to as LED) has been commercialized.
- the n-type GaN film 22 ′ of the semiconductor light emitting device is formed.
- the p type GaN film 24 ′ in the light emitting layer 2 ′ having a laminated structure of the p type GaN film 24 ′, the light emitting film 23 ′, and the n type GaN film 22 ′ is formed on the Si substrate 6 ′.
- the metal film 7 ′ has a role of ensuring ohmic electrical conductivity between the p-type GaN film 24 ′ and the Si substrate 6 ′, and light that has passed through the p-type GaN film 24 ′. It plays a role of “reflecting to the side” and a role of joining the p-type GaN film 24 ′ and the Si substrate 6 ′.
- a fine concavo-convex structure is formed on the entire upper surface of the n-type GaN film 22 ′, and, for example, a Ti film and an Al film are formed on the upper surface of the n-type GaN film 22 ′.
- the island-shaped cathode 4 ′ made of a laminated film with the Au film is formed, the light incident from the n-type GaN film 22 ′ side is easily absorbed, and the light emission efficiency is lowered.
- the spindle-shaped projections are formed by performing crystal anisotropic etching using a KOH solution on the n-type GaN film 22 ′, the size and density of the spindle-shaped projections Greatly depends on the crystallinity of the n-type GaN film 22 ', and the reproducibility of the size and density of the conical protrusions is low, resulting in variations in light extraction efficiency, resulting in variations in light emission efficiency and yield. It was the cause of the cost increase by the fall.
- a fine concavo-convex structure 8a ′ is formed on the upper surface of the sapphire substrate 8 ′, and an n-type GaN film 22 ′, a light emitting film 23 ′, and p are formed on the upper surface of the sapphire substrate 8 ′.
- a semiconductor light emitting device in which a light emitting layer 2 ′ having a laminated structure with a GaN film 24 ′ is also proposed.
- a transparent conductive film 25 ′ made of an ITO film is formed on the entire upper surface of the p-type GaN film 24 ′, and an island-shaped anode is formed on the transparent conductive film 25 ′.
- an island-like cathode 4 ′ is formed on the upper surface of the n-type GaN film 22 ′.
- a predetermined region of the laminated film of the n-type GaN film 22 ′, the light emitting film 23 ′, and the p-type GaN film 24 ′ formed on the upper surface of the sapphire substrate 8 ′ is exposed by etching.
- an island-like cathode 4 ′ is formed on the surface of the n-type GaN layer 22 ′.
- a fine concavo-convex structure 8a ′ is formed at the interface between the sapphire substrate 8 ′ and the n-type GaN film 22 ′, and the traveling direction of light in the semiconductor light emitting device is achieved by the fine concavo-convex structure 8a ′.
- a p-type GaN film 24 ′ includes a p-type GaN film 24 ′, a light-emitting film 23 ′, an n-type GaN film 22 ′, a cathode 4 ′ formed on a flat surface at the center of the upper surface of the n-type GaN film 22 ′, and a p-type GaN film 24 ′.
- Semiconductor light emitting devices have been proposed (see, for example, Japanese Patent Application Laid-Open No. 2008-60331).
- a fine concavo-convex structure is formed by crystal anisotropic etching using a KOH solution except for the portion where the cathode 4 ′ is formed on the upper surface of the n-type GaN film 22 ′.
- the anode 5 ′ of this semiconductor light emitting device includes a contact ZnO film 5a ′, a Schottky ZnO film 5b ′ in contact with the p-type GaN film 24 ′ only in the projection region of the cathode 4 ′, and a current diffusion ZnO film. 5c '.
- the cathode 4 ' is formed on the flat surface of the n-type GaN film 22', light absorption at the cathode 4 'can be suppressed.
- the contact resistance with the p-type GaN film 24 ′ in the projection region of the cathode 4 ′ in the anode 5 ′ is larger than the contact resistance with the p-type GaN film 24 ′ in the region other than the projection region, It is possible to alleviate the concentration of current immediately below the cathode 4 ′, and the ratio of light absorbed or blocked by the cathode 4 ′ is reduced, so that the light extraction efficiency is improved.
- the semiconductor light emitting device disclosed in Non-Patent Document 1 includes a light emitting layer and a base material formed from a hexagonal pyramidal n-type ZnO substrate bonded to the light emitting layer, and is provided on the lower surface of the base material.
- An anode is formed, and a cathode is formed on the lower surface of the n-type GaN film of the light emitting layer, and each of the anode and the cathode is used by bonding with a different wiring pattern (conductor pattern) on the mounting substrate via a bump.
- the semiconductor light emitting device having the configuration shown in FIG. 10 is assumed to extract light mainly from the fine uneven structure of the n-type GaN film 22 ′, and from the light emitting film 23 ′ to the p-type GaN film 24 ′ side. Since the emitted light is absorbed by the bonding layer, or reflected by the bonding layer and incident on the light emitting layer and absorbed, there is a problem that the light emission efficiency is low.
- the refractive index of the base material is smaller than the refractive index of the p-type GaN film, the base material and the p-type GaN film out of the light generated in the light emitting layer. Since light having a low incident angle with respect to the bonding surface is not introduced into ZnO, further improvement in luminous efficiency has been desired.
- the present invention has been made in view of the above reasons, and an object of the present invention is to provide a semiconductor light emitting device capable of improving the light emission efficiency and a method for manufacturing the same.
- a semiconductor light-emitting device includes a light-emitting layer having a stacked structure of a p-type GaN film and an n-type GaN film, a conductive hexagonal pyramid-shaped substrate formed of ZnO and mounting the light-emitting layer on the bottom surface, An anode joined to the bottom surface of the substrate at a position away from the light emitting layer, and a cathode mounted on the light emitting layer are provided.
- the p-type GaN film is bonded to the bottom surface of the base material, and the cathode is bonded to the N-polar surface of the n-type GaN film opposite to the p-type GaN film.
- This semiconductor light emitting device is characterized in that the N-polar surface of the n-type GaN film opposite to the p-type GaN film has a fine concavo-convex structure other than the portion where the cathode is joined.
- the fine concavo-convex structure suppresses the light emitted from the light emitting layer from being absorbed by the cathode, and efficiently guides the light emitted from the light emitting layer to the outside world, thereby improving the light extraction efficiency.
- This fine concavo-convex structure is preferably composed of a plurality of recesses arranged two-dimensionally over the N-polar surface of the n-type GaN film. By arranging the plurality of recesses regularly, the light extraction efficiency can be further improved.
- each of the recesses is formed so that the opening diameter thereof gradually increases as going to the N-polar surface side of the n-type GaN film. Furthermore, it is preferable that each recess is formed in a pyramid shape. As a result, the light extraction efficiency can be further improved.
- Cathode and anode are laminated film of Ti film, Al film and Au film, laminated film of Ti film and Au film, laminated film of Al film and Au film, Ti film, Al film, Ni film and Au film It is preferable that it is comprised by one laminated film selected from the group of these laminated films.
- the outermost surface side is the Au film in both the cathode and the anode.
- the Au film prevents oxidation of the cathode and the anode, and enhances the bonding reliability with the Au bump when flip chip mounting is performed on the mounting substrate using the Au bump.
- both the cathode and the anode can obtain a good ohmic contact while reducing the consumption of the metal material at the time of manufacture. Increases reliability and reliability.
- a transfer layer is formed on the N-polar surface of the n-type GaN film, and a mold die having a predetermined uneven pattern on one surface is pressed against the transfer layer to transfer the uneven pattern to the transfer layer.
- the transfer layer and the n-type GaN layer are dry-etched from the surface side, and a part of the N-polar surface of the transfer layer and the n-type GaN layer is removed by etching to form a fine concavo-convex structure on the N-polar surface of the n-type GaN layer. It is characterized by forming.
- the present invention it is possible to form a concavo-convex pattern with good reproducibility, and it is possible to provide a semiconductor light emitting element capable of improving the light emission efficiency at a low cost.
- a mounting substrate on which one surface of the semiconductor light emitting device is mounted and a phosphor that emits light having a longer wavelength than the semiconductor light emitting device when excited by light emitted from the semiconductor light emitting device
- a dome-shaped color conversion member disposed between the mounting substrate and the semiconductor light emitting device, and the mounting substrate is disposed on the one surface side of the semiconductor light emitting device. It is preferable to provide a plurality of wiring patterns that are bonded to the cathode electrode and the anode electrode respectively through bumps, and a reflective film that reflects light emitted from the semiconductor light emitting element to the mounting substrate side.
- the semiconductor light-emitting device of Embodiment 1 is shown, (a) is a schematic sectional drawing of the state mounted in the mounting board
- the semiconductor light-emitting device of Embodiment 2 is shown, (a) is a schematic sectional drawing of the state mounted in the mounting board
- FIG. 6 is a schematic cross-sectional view of a light emitting device according to Embodiment 4.
- FIG. It is a schematic sectional drawing of the semiconductor light-emitting device which shows a prior art example. It is a schematic sectional drawing of the semiconductor light-emitting device which shows another prior art example. It is a schematic sectional drawing of the semiconductor light-emitting device which shows another prior art example.
- the semiconductor light emitting device 1 of the present embodiment includes a light emitting layer 2 that is a GaN-based blue LED chip that emits blue light, a base material 3 that is formed of n-type ZnO and has conductivity, a cathode 4, and an anode 5. ing.
- the light emitting layer 2 has an n-type GaN film 22 and a p-type GaN film 24.
- the base material 3 is formed in a hexagonal pyramid shape and has a bottom surface 31 to which the light emitting layer 2 is directly joined.
- the cathode 4 is formed so as to be in ohmic contact with the lower surface that is the N-polar surface of the n-type GaN film 22.
- the anode 5 is formed so as to be in ohmic contact with the substrate 3.
- the light emitting layer 2 has a laminated structure of an n-type GaN film 22, a light emitting film 23, and a p-type GaN film 24.
- an island-like (square shape in this case) cathode 4 is formed on the flat portion 22a, and a fine uneven structure 22c is formed at a portion other than the portion where the cathode 4 is formed.
- the fine concavo-convex structure 22c serves to change the traveling direction of light emitted downward (that is, on the side opposite to the base 3) of the light generated in the light emitting layer 2.
- the light-emitting film 23 of the light-emitting layer 2 of the semiconductor light-emitting element 1 includes the n-type GaN film 22 having the fine uneven structure 22c on one side and the p-type GaN film 24 on the other side.
- the p-type GaN film 24 is directly bonded to the base material 3.
- the bottom surface 31 of the base material 3 is formed in a regular hexagonal shape.
- the planar view shape of the light emitting layer 2 is formed in a pentagonal shape in which four of the five sides are along the four sides of the bottom surface 31 of the substrate 3.
- an island-shaped (here, square-shaped) anode 5 is formed at a position separated from the p-type GaN film 24.
- the n-type GaN film 22, the light emitting film 23, and the p-type GaN film 24 can have the same planar size.
- the shape, size, number and arrangement of the cathode 4 on the n-type GaN layer 22 are not particularly limited.
- the number of cathodes is preferably plural from the viewpoint of improving heat dissipation. It is desirable to design the shape and arrangement of the cathode in consideration of heat dissipation.
- MOVPE method metal-organic vapor phase epitaxy
- the epitaxial growth method of the light emitting layer 2 is not limited to the MOVPE method, and for example, a hydride vapor phase growth method (HVPE method), a molecular beam epitaxy method (MBE method), or the like may be employed.
- HVPE method hydride vapor phase growth method
- MBE method molecular beam epitaxy method
- the light emitting film 23 has a quantum well structure in which a well layer made of an InGaN layer is sandwiched between barrier layers made of a GaN layer.
- the composition of the InGaN layer is set so that the emission peak wavelength of the light emitting film 23 is 450 nm.
- the emission wavelength (emission peak wavelength) is not particularly limited.
- the quantum well structure of the light emitting film 23 is not limited to a single quantum well structure, and may be a multiple quantum well structure.
- the light emitting film 23 does not necessarily have a quantum well structure, and may have a single layer structure.
- the light emitting film 23 may be appropriately adopted from a nitride semiconductor material such as AlInGaN, AlInN, or AlGaN according to a desired light emission wavelength.
- the laminated structure of the light emitting layer 2 includes an n-type GaN film 22 and a p-type GaN film 24.
- This laminated structure may be, for example, a laminated structure including only the n-type GaN film 22 and the p-type GaN film 24, or a laminated structure in which a p-type AlGaN film is interposed between the light-emitting film 23 and the p-type GaN film. .
- GaN and ZnO are polar semiconductors having a wurtzite crystal structure and polarity in the c-axis direction.
- the lower surface of the n-type GaN film 22 is constituted by a (000-1) plane in which the flat portion 22a is an N-polar plane.
- the upper surface of the p-type GaN film 24 is constituted by a (0001) plane that is a Ga polar plane.
- the base material 3 is composed of a (0001) plane whose bottom surface 31 is a Zn polar surface, and a top surface 32 is composed of a (000-1) surface which is an O polar surface.
- the Zn polar face of the substrate 3 and the Ga polar face of the p-type GaN film 24 are directly joined.
- the base material 3 may be formed not by doping but by oxygen vacancies or zinc interstitial defects in order to exhibit an n-type conductivity type.
- the base material 3 is a material whose conductivity type or conductivity is controlled by doping, such as a Ga-doped ZnO substrate (GZO substrate), It is preferably composed of an Al-doped ZnO substrate (AZO substrate).
- GZO substrate Ga-doped ZnO substrate
- AZO substrate Al-doped ZnO substrate
- the n-type ZnO wafer that is the basis of the substrate 3 of the present embodiment is manufactured using a hydrothermal synthesis method, so that the substrate 3 is electrically conductive (electrically conductive). Since it has a very high light transmittance for visible light, light absorption loss can be kept low.
- the cathode 4 and the anode 5 described above are composed of a laminated film of a Ti film, an Al film, and an Au film, and the lowermost surface of the laminated film of the cathode 4 and the anode 5 is an Au film.
- the thickness of the Ti film is set to 10 nm
- the thickness of the Al film is set to 50 nm
- the thickness of the Au film is set to 500 nm.
- the cathode 4 and the anode 5 are formed of the same metal material and have the same electrode structure, the films constituting the laminated film of the cathode 4 and the anode 5 And the adhesion to the n-type GaN film 22 and the substrate 3 can be improved.
- the cathode 4 and the anode 5 are simultaneously formed by the electron beam vapor deposition method (EB vapor deposition method).
- the lift-off method is used for patterning the cathode 4 and the anode 5. That is, after forming a resist layer in which the regions where the cathode 4 and the anode 5 are to be formed are opened, the cathode 4 and the anode 5 are formed by electron beam evaporation, and unnecessary films on the resist layer are removed together with the resist layer. ing.
- the thickness of the n-type GaN film 22 is relatively large, about 4 ⁇ m, and the n-type GaN film 22 has high electrical conductivity. An ohmic contact (ohmic contact) can be obtained.
- the thickness of the n-type GaN film 22 is not particularly limited.
- the laminated film of the Ti film, the Al film, and the Au film is used as the cathode 4 and the anode 5 as described above, so that the n-type GaN film 22 and the base material 3 are respectively formed.
- good ohmic contact ohmic contact with low contact resistance
- the laminated film of the cathode 4 and the anode 5 is not limited to the laminated film of Ti film, Al film and Au film, but is laminated film of Ti film and Au film, laminated film of Al film and Au film, Ti film and Al film You may comprise by one laminated film selected from the group of the laminated film of a film
- the laminated film of the cathode 4 and the anode 5 has an Au film on the bottom surface in any configuration.
- This Au film prevents oxidation of the cathode 4 and the anode 5 and improves the bonding reliability with the bumps 40 and 40 when flip-chip mounting is performed on the mounting substrate 50 using the bumps 40 and 40 made of Au bumps.
- the cathode 4 is formed on the n-type GaN film 22
- the anode 5 is formed on the base material 3
- the cathode 4 and the anode 5 are made of the same metal material. Therefore, the consumption of the metal material at the time of manufacture can be reduced, and both the cathode 4 and the anode 5 can obtain a good ohmic contact, and the adhesion can be improved and the reliability can be improved.
- the cathode 4 and the anode 5 do not necessarily have the same electrode structure.
- the anode 5 may be constituted by a laminated film of a Ti film and an Au film
- the cathode 4 may be constituted by a laminated film of a Ti film, an Al film, a Ni film, and an Au film.
- the semiconductor light emitting device 1 of this embodiment by applying a forward bias voltage between the anode 5 and the cathode 4, holes are injected from the anode 5 into the p-type GaN film 24 by tunnel current injection, and the cathode Electrons are injected from 4 into the n-type GaN film 22. Then, electrons and holes injected into the light emitting film 23 are recombined to emit light, and light is emitted from the side surfaces 33 and the upper surface 32 of the substrate 3.
- the refractive index of ZnO for light having a wavelength of 450 nm is 2.1
- the refractive index of GaN is 2.4
- the refractive index of air is 1.
- the semiconductor light emitting device 1 of the present embodiment has a lower portion (on the opposite side to the base material 3) of the light generated in the light emitting layer 2 except for the formation region of the cathode 4 on the upper surface of the n-type GaN film. ), A fine concavo-convex structure 22c that changes the traveling direction of the emitted light is formed.
- the fine concavo-convex structure 22c is formed by two-dimensionally arranging a large number of concave portions 22b on the lower surface of the n-type GaN film 22 (the concave portions 22b are formed at the respective lattice points of the virtual square lattice). It is a regular fine uneven pattern.
- each concave portion 22b of the fine concavo-convex structure 22c is a square shape having a side of 5 ⁇ m, the distance between adjacent concave portions 22b is 5 ⁇ m, and the inner surface of each concave portion 22b and the cathode 4
- the angle formed with the flat surface including the N-polar surface, which is the flat portion 22a formed with the angle N, is approximately 90 degrees, and the cross-sectional shape of the fine concavo-convex structure 22c is a rectangular wave.
- the light emitting layer 2 is closer to the mounting substrate 50 than the base material 3.
- the cathode 4 and the anode 5 are bonded to wiring patterns (conductor patterns) 54 and 54 formed on the upper surface of the insulating substrate 50a in the mounting substrate 50 via bumps 40 and 40 made of Au bumps, respectively.
- the mounting substrate 50 also serves as a heat transfer plate that transfers heat generated in the semiconductor light emitting element 1.
- an aluminum nitride substrate having a higher thermal conductivity than an organic substrate such as a glass epoxy resin substrate is used as the insulating substrate 50a.
- the insulating substrate 50a is not limited to an aluminum nitride substrate, and may be constituted by, for example, an alumina substrate, a hollow substrate, a silicon substrate having a silicon oxide film formed on the surface, or the like.
- the material of each bump 40, 40 is not limited to Au, but may be solder or the like. However, in order to efficiently dissipate the heat generated in the semiconductor light emitting element 1, Au having a higher thermal conductivity than solder is used. It is preferable to adopt. Further, as the number of bumps 40 is increased, the thermal resistance between the semiconductor light emitting element 1 and the mounting substrate 50 can be reduced, and the heat dissipation can be enhanced.
- a reflective film that reflects light emitted from the semiconductor light emitting element 1 toward the mounting substrate 50 in a desired direction on the upper surface of the insulating substrate 50a to improve the light emission efficiency of the light emitting device.
- a light emitting layer 2 having a laminated structure of an n-type GaN film 22, a light emitting film 23, and a p-type GaN film 24 is grown on the upper surface of the sapphire wafer by a MOVPE method or the like via a buffer layer made of a non-doped GaN layer. (Crystal growth step). Thereafter, the light emitting layer 2 is patterned into a predetermined shape (in this embodiment, the pentagonal shape described above) using a photolithography technique and an etching technique (patterning step). Next, the light emitting layer 2 on the sapphire wafer and the n-type ZnO wafer serving as the base of the substrate 3 are directly bonded (bonding step).
- the sapphire wafer is removed from the light emitting layer 2 (wafer lift-off process).
- the fine concavo-convex structure 22c is formed on the lower surface of the n-type GaN film 22 (fine concavo-convex structure forming step).
- the cathode 4 and the anode 5 are formed (electrode formation step).
- a mask layer patterned in a predetermined shape (the shape of the upper surface 32 of the base material 3) is formed on the upper side of the n-type ZnO wafer (the side opposite to the light emitting layer 2) (mask layer forming step).
- a hexagonal pyramid shape made of a part of the n-type ZnO wafer is formed.
- the base material 3 is formed (base material processing step).
- the mask layer is removed (mask layer removal step).
- the n-type ZnO wafer As the n-type ZnO wafer, a single crystal ZnO wafer having a dislocation defect density of 103 cm ⁇ 2 or less and excellent crystallinity is used, and is manufactured by using a hydrothermal synthesis method suitable for mass production. Further, in the above-described bonding step, after the bonding surface of the light emitting layer 2 and the n-type ZnO wafer is cleaned, the n-type ZnO wafer is overlaid on the upper side of the light emitting layer 2 (the side opposite to the sapphire wafer), and a predetermined pressure ( For example, the light emitting layer 2 and the n-type ZnO wafer are directly bonded by performing heat treatment while applying 2 MPa).
- the value of the predetermined pressure is not particularly limited, and is appropriately changed according to the wafer size of the n-type ZnO wafer. This heat treatment is performed at 800 ° C. in a nitrogen gas atmosphere, but these conditions are merely examples and are not particularly limited.
- a resist layer (hereinafter, referred to as a first resist layer) in which a region corresponding to each of the concave portions 22b is opened on the lower surface of the n-type GaN film 22 is utilized using a photolithography technique.
- the n-type GaN film is formed by dry etching using a chlorine-based gas (for example, Cl 2 gas, BCl 3 gas, mixed gas of Cl 2 gas and BCl 3 gas) as an etching gas using the first resist layer as a mask.
- a chlorine-based gas for example, Cl 2 gas, BCl 3 gas, mixed gas of Cl 2 gas and BCl 3 gas
- Each recess 22b is formed by anisotropically etching 22 and then the first resist layer is removed.
- the flat portion 22a is covered with the first resist layer.
- a resist layer (hereinafter referred to as a second resist layer) in which the regions to be formed of the cathode 4 and the anode 5 are opened on the lower side of the n-type ZnO wafer is referred to using a photolithography technique.
- the cathode 4 and the anode 5 are simultaneously formed by an electron beam evaporation method or the like.
- the second resist layer and the unnecessary film on the second resist layer are removed (lifted off) using an organic solvent (for example, acetone).
- the height (thickness) of the hexagonal pyramidal base material 3 can be defined by the thickness of the n-type ZnO wafer.
- the height of the equipment 3 is 500 ⁇ m.
- the thickness of the n-type ZnO wafer is not particularly limited.
- the inclination angle of each side surface 33 with respect to the bottom surface 31 of the substrate 3 is defined by the crystal axis direction of the n-type ZnO wafer.
- each side surface 33 of the base material 3 is a ⁇ 10-1-1 ⁇ plane, and the side surface 33 having an inclination angle of 60 ° can be formed with good reproducibility.
- the area of the upper surface 32 of the substrate 3 can be defined by the planar size of the mask layer
- the area of the bottom surface 31 of the substrate 3 can be defined by the planar size of the mask layer and the thickness of the n-type ZnO wafer. Therefore, in order to increase the area of the light emitting film 23 and increase the output, the planar size of the mask layer can be increased while the thickness of the n-type ZnO wafer is kept constant, and the area of the bottom surface 31 of the substrate 3 can be increased. .
- the semiconductor light emitting device 1 of this embodiment includes a light emitting layer 2 having a laminated structure of a p-type GaN film 24 and an n-type GaN film 22, and a conductive hexagonal pyramid formed of ZnO and mounting the light emitting layer on a bottom surface 31.
- a substrate 3 having a shape, an anode 5 bonded to the bottom surface 31 of the substrate 3 at a position away from the light emitting layer 2, and a cathode 4 mounted on the light emitting layer 2 are provided.
- the p-type GaN film 24 is bonded to the bottom surface 31 of the substrate 3, and the cathode 4 is bonded to the N-polar surface of the n-type GaN film 22 opposite to the p-type GaN film 24.
- the N-polar surface of the n-type GaN film 22 opposite to the p-type GaN film 24 has a fine concavo-convex structure 22 c other than the portion where the cathode 4 is joined.
- the light emitting film 23 is provided with the n-type GaN film 22 having the fine concavo-convex structure 22c on one side, and the hexagonal pyramidal n-type ZnO substrate 3 is directly bonded.
- a p-type GaN film 24 is provided on the other surface.
- the semiconductor light emitting device 1 of the present embodiment good ohmic contact can be obtained for each of the cathode 4 and the anode 5 formed in an island shape, so that desired electrical characteristics can be maintained.
- the cathode 4 and the anode 5 formed in this way are reduced in area, thereby reducing light absorption loss at the interface between the cathode 4 and the n-type GaN film 22 and at the interface between the anode 5 and the substrate 3. To do.
- the cathode 4 of the semiconductor light emitting device 1 of the present embodiment is formed on the flat portion 22a as compared with the case where the cathode 4 is formed on the fine concavo-convex structure 22c, so that the contact between the cathode 4 and the n-type GaN film 22 is achieved.
- the area can be reduced, the light from the light emitting film 23 side can be efficiently reflected, and the light absorption loss at the interface between the cathode 4 and the n-type GaN film 22 can be reduced.
- the light emitting layer 2 is bonded to the base material 3. Since ZnO used for this substrate is composed of abundant and non-toxic Zn and O, cost reduction and stable supply can be achieved.
- the cathode 4 and the anode 5 are formed on the bottom surface 31 side of the base material 3, and the inclination angle of each side surface 33 with respect to the bottom surface 31 of the base material 3 is 60 °. Therefore, the spread angle of the emitted light can be increased.
- the angle range in which the emitted light intensity per unit solid angle is 50% or more with respect to the maximum value is defined as the light emission angle (the spread angle of the emitted light), the light emission of the semiconductor light emitting device 1 of the present embodiment.
- the angle is 120 ° or more.
- Embodiment 2 The basic configurations of the semiconductor light emitting element 1 and the light emitting device of the present embodiment shown in FIGS. 2 and 3 are substantially the same as those of the first embodiment, and only the shape of the fine uneven structure 22c is different.
- symbol is attached
- the lower surface of the n-type GaN film 22 in the present embodiment is an N-polar surface, and has a flat portion 22a on which the cathode electrode 4 is formed and a fine concavo-convex structure 22c.
- the inner surface of the concave portion 22b constituting the fine concavo-convex structure 22c is an inclined surface having an inclination angle ⁇ of less than 90 degrees with respect to the plane including the N-polar surface. That is, the recess 22 is formed such that the opening diameter gradually increases as it goes to the N-polar plane side of the n-type GaN film 22. With this design, the semiconductor light emitting device 1 of the present embodiment improves the light extraction efficiency.
- Each recess 22b in the present embodiment is formed in a pyramid shape (here, a quadrangular pyramid shape) in which the inclination angle ⁇ of each of the four inner surfaces of the recess 22b is 60 degrees. Note that the inclination angle ⁇ is not limited to 60 degrees.
- the manufacturing method of the semiconductor light emitting device 1 of the present embodiment is substantially the same as the manufacturing method described in the first embodiment, and only the fine uneven structure forming process for forming the fine uneven structure 22c is different.
- the fine concavo-convex structure forming step will be described with reference to FIG.
- the structure shown in FIG. 4A is obtained by forming the transfer layer 60 below the n-type GaN film 22 (upper side in FIG. 4) (transfer layer forming step).
- the concavo-convex pattern 71 is transferred to the transfer layer 60 by pressing the mold 70 on which the concavo-convex pattern 71 designed according to the fine concavo-convex structure 22c is pressed against the transfer layer 60 (transfer process).
- the transfer layer forming step the transfer layer 60 is formed by applying a resist such as PMMA by spin coating.
- a resist such as PMMA
- the mold 70 is opposed to the transfer layer 60 for alignment, and then the mold 70 is brought into contact with the transfer layer 60 in a state where the transfer layer 60 is heated and softened.
- the transfer layer 60 is deformed by pressurizing the mold 70 with a predetermined pressure, the transfer layer 60 is cooled, and then the mold 70 is separated from the transfer layer 60, so that FIG. ) Is obtained.
- the concave / convex pattern 71 of the mold 70 is formed by two-dimensionally arranging square pyramidal convex portions 71a.
- the transfer layer 60 is patterned into a shape in which square pyramidal concave portions 61a are two-dimensionally arranged.
- the mold 70 is designed so that the concave portion 61 a is not formed in the portion 61 b corresponding to the flat portion 22 a of the n-type GaN film 22 in the transfer layer 60.
- the transfer layer 60 is heated and cooled, but the mold 70 may be heated and cooled instead of the transfer layer 60.
- the material of the transfer layer 60 is not limited to a resist.
- the transfer layer 60 and the n-type GaN film 22 are dry-etched to form a fine concavo-convex structure 22c having an inclination angle ⁇ on the lower surface of the n-type GaN layer 22, thereby the structure shown in FIG. Get.
- a chlorine-based gas for example, Cl2, BCl3, a mixture of Cl2 and BCl3, or the like.
- the manufacturing method of the semiconductor light emitting device 1 of this embodiment forms the fine concavo-convex structure 22c with good reproducibility at low cost and improves the light emission efficiency.
- Embodiment 3 The basic configuration of the semiconductor light emitting element 1 and the light emitting device of the present embodiment shown in FIG. 5 is substantially the same as that of the second embodiment.
- the shape of the fine concavo-convex structure 22c (inclination angle ⁇ in FIG. 3) and the n-type GaN film 22 The numbers of the flat portions 22a, the cathodes 4 and the anodes 5 are different (two in this embodiment).
- symbol is attached
- the cathode 4 and the anode 5 are configured by a laminated film of an Al film and an Au film, and the thickness of the Al film is set to 100 nm and the thickness of the Au film is set to 500 nm. . These thicknesses are not particularly limited.
- the laminated film of the cathode 4 and the anode 5 is not limited to a laminated film of an Al film and an Au film, and for example, a laminated film of a Ti film, an Al film, and an Au film, a laminated film of a Ti film and an Au film, and a Ti film.
- a laminated film of Al film, Ni film, and Au film may be used.
- FIG. 6 shows a simulation result of the light extraction efficiency when the reflectance is changed.
- I represents various changes in the reflectance (light reflectance) of the cathode 4 and anode 5 of the semiconductor light emitting device 1 of FIG. 5, and II represents the cathode 4 ′ and metal film of the conventional semiconductor light emitting device shown in FIG.
- the case where the reflectance of 7 ′ is variously changed is shown.
- the reflectance of Al about 92%) with respect to light having a wavelength of 460 nm
- the light extraction efficiency of the present embodiment about 97%) is much higher than that of the conventional example (about 63%).
- a flat metal film 7 ′ is formed on the entire upper surface of the Si substrate 6 ′, and the reduction in light extraction efficiency due to light absorption loss is caused by the reflectance of the metal film 7 ′. Strongly depends on.
- the area of the interface between the cathode electrode 4 and the n-type GaN layer 22 that causes light absorption loss can be reduced, and fine unevenness is formed on one side of the light emitting film 23 in the thickness direction.
- n-type GaN layer 22 having a structure 22c is provided, and a hexagonal pyramid-shaped n-type ZnO substrate 3 directly bonded to the p-type GaN layer 24 is provided on the other side. Therefore, in the semiconductor light emitting device 1 of the present embodiment, light is emitted to the outside more efficiently than in the conventional example. Therefore, it is considered that the light extraction efficiency is much higher than that in the conventional example.
- the light extraction efficiency is 97 even though the cathode 4 is made of Al which has a low reflectance as a metal material in contact with the n-type GaN film 22. % Is a very high value. Moreover, in this embodiment, the choice of the electrode material of the cathode 4 increases, an electrode formation process becomes easy, and productivity of the semiconductor light emitting element 1 with high luminous efficiency can be improved.
- the basic configuration of the light emitting device of the present embodiment shown in FIG. 7 is substantially the same as that of the third embodiment, and is different in that a dome-shaped color conversion member 80 is provided on the mounting substrate 50 so as to surround the semiconductor light emitting element 1. .
- the color conversion member 80 is formed of a translucent material containing a phosphor that is a wavelength conversion material that is excited by light emitted from the semiconductor light emitting element 1 and emits light having a longer wavelength than the semiconductor light emitting element 1. ing.
- symbol is attached
- the light emitting device of this embodiment includes a reflective film (not shown) that reflects light emitted from the semiconductor light emitting element 1 toward the mounting substrate 50 on the mounting substrate 50.
- a reflective film As a material for the reflective film, a white resist having a high reflectivity with respect to the light emitted from the semiconductor light emitting element 1 and an insulating property is adopted. Since the reflective film formed of the insulating material and the wiring pattern 54 do not short-circuit, the light emitting device of this embodiment can be configured such that the upper surface of the insulating substrate 50a of the mounting substrate 50 is not exposed.
- the reflective film is formed of a conductive material such as metal, it is necessary to provide a gap with the wiring pattern 54 in order to prevent a short circuit with the wiring pattern 54. Some will be exposed.
- the insulating substrate 50a is made of a material having a reflectance lower than that of AlN, AlN may be adopted as the material of the reflective film.
- the color conversion member 80 has an end edge (periphery of the opening) on the mounting substrate 50 side fixed to the mounting substrate 50 using an adhesive (for example, a silicone resin, an epoxy resin, or the like).
- an adhesive for example, a silicone resin, an epoxy resin, or the like.
- phosphors are dispersed in a light-transmitting material (for example, a silicone resin) having a refractive index smaller than that of the phosphors.
- a light-transmitting material for example, a silicone resin
- red phosphor particles and green phosphor particles are employed. Therefore, in the light emitting device of the present embodiment, the blue light emitted from the semiconductor light emitting element 1 and the light emitted from the red phosphor particles and the green phosphor particles of the color conversion member 80 are emitted from the color conversion member 80.
- White light can be obtained by being emitted through the surface (outer surface) 70b.
- the phosphor dispersed in the color conversion member 80 is not limited to the combination of red phosphor particles and green phosphor particles, for example, yellow phosphor particles, a combination of green phosphor particles and orange phosphor particles, A combination of yellow-green phosphor particles and orange phosphor particles may be used. Moreover, you may make it obtain white light by using the semiconductor light-emitting device 1 which radiates
- the translucent material of the color conversion member 80 is not limited to a silicone resin, but may be glass, for example, and when blue light or ultraviolet light is used as excitation light by employing silicone resin or glass In addition, it is possible to suppress deterioration of the translucent material due to excitation light.
- the translucent material of the color conversion member 80 is not limited to silicone resin and glass.
- the light extraction efficiency of the semiconductor light emitting element 1 is higher than that of the conventional example, and the mounting substrate 50 has bumps separately from the cathode 4 and the anode 5 of the semiconductor light emitting element 1.
- a reflective film that reflects light emitted from the semiconductor light emitting element 1 to the mounting substrate 50 side is provided. The luminous efficiency of the mixed color light of the light emitted from the phosphor and the light emitted from the phosphor can be improved.
- a gas layer (for example, an air layer) 90 is interposed between the color conversion member 80 and the semiconductor light emitting element 1, and the color conversion member 80 is emitted from the semiconductor light emitting element 1.
- the amount of light returning to the semiconductor light emitting element 1 side can be reduced.
- the extraction efficiency of the mixed color light of the light emitted from the semiconductor light emitting element 1 and the light emitted from the phosphor of the color conversion member 80 can be increased, the light output can be improved, and the outside atmosphere can be improved.
- the gas in the gas layer 90 is not limited to air, and may be nitrogen gas, for example.
- a cover member that does not include a phosphor and is formed of only a translucent material may be used instead of the color conversion member 80.
- the semiconductor light emitting element 1 and A light-emitting device with high emission efficiency can be realized for light of the same emission color.
- the light emitting film 23 is designed so that the light radiated
- emitted from the semiconductor light-emitting device 1 is not restricted to blue light, For example, red light, green light, purple light, ultraviolet light, or the like may be used.
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Abstract
Description
以下、図1に基づいて本実施形態の半導体発光素子1について説明する。
図2および図3に示す本実施形態の半導体発光素子1および発光装置の基本構成は、実施形態1と略同じで、微細凹凸構造22cの形状のみが相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を適宜省略する。
図5に示す本実施形態の半導体発光素子1および発光装置の基本構成は、実施形態2と略同じであり、微細凹凸構造22cの形状(図3の傾斜角θ)と、n型GaN膜22の平坦部22a、カソード4、アノード5の数(本実施形態では2つずつ)が相違する。なお、実施形態2と同様の構成要素には同一の符号を付して説明を適宜省略する。
図7に示す本実施形態の発光装置の基本構成は実施形態3と略同じであり、ドーム状の色変換部材80が半導体発光素子1を囲むようにして実装基板50に備えられている点で相違する。この色変換部材80は、半導体発光素子1から放射される光によって励起されて半導体発光素子1よりも長波長の光を放射する波長変換材料である蛍光体を含有した透光性材料により形成されている。なお、実施形態3と同様の構成要素には同一の符号を付して説明を省略する。
Claims (7)
- p型GaN膜とn型GaN膜との積層構造を有する発光層と、
ZnOで形成されて上記発光層を底面に搭載する導電性の六角錐形状の基材と、
上記発光層と離れた位置で上記基材の底面に接合するアノードと、
上記発光層上に搭載されたカソードとを備えた半導体発光素子であって、
上記p型GaN膜が上記基材の底面へ接合され、
上記n型GaN膜における上記p型GaN膜と反対側となるN極性面上に、上記カソードが接合され、
上記n型GaN膜における上記p型GaN膜と反対側となるN極性面が、上記カソードが接合される部分以外で、微細な凹凸構造を有することを特徴とする半導体発光素子。
- 上記微細凹凸構造は、上記n型GaN膜のN極性面に亘って2次元配列された複数の凹所で構成されることを特徴とする請求項1記載の半導体発光素子。
- 上記の各凹所は上記n型GaN膜のN極性面側に行くにつれてその開口径が次第に大きくなったことを特徴とする請求項2記載の半導体発光素子。
- 上記の各凹所は角錐形状とされたことを特徴とする請求項3記載の半導体発光素子。
- 上記カソードおよび上記アノードは、Ti膜とAl膜とAu膜との積層膜、Ti膜とAu膜との積層膜、Al膜とAu膜との積層膜、Ti膜とAl膜とNi膜とAu膜との積層膜の群から選択される1つの積層膜により構成されることを特徴とする請求項1ないし請求項4のいずれか1項に記載の半導体発光素子。
- p型GaN膜とn型GaN膜との積層構造を有する発光層を形成し、
ZnOで形成された六角錐形状の基材の底面に上記発光層の上記p型GaN膜を接合し、
上記発光層と離れた位置で上記基材の底面にアノードを接合し、
上記n型GaN膜における上記p型GaN膜と反対側となるN極性面上に、上記カソードを接合し、
上記n型GaN膜における上記p型GaN膜と反対側となるN極性面に、上記カソードが接合される部分以外で、微細凹凸構造を形成する半導体発光素子の製造方法であって、
上記n型GaN膜のN極性面上に転写層を形成し、
所定の凹凸パターンを一面に有するモールドダイを転写層に押しつけて上記凹凸パターンを転写層に転写し、
上記転写層及びn型GaN層を上記表面側からドライエッチングして、上記転写層と上記n型GaN層のN極性表面の一部をエッチング除去して、上記n型GaN層のN極性面に上記微細凹凸構造を形成することを特徴とする半導体発光素子の製造方法。
- 請求項1ないし請求項4のいずれか1項に記載の半導体発光素子と、
半導体発光素子が一表面側に実装された実装基板と、
半導体発光素子から放射される光によって励起されて半導体発光素子よりも長波長の光を放射する蛍光体を含有した透光性材料により形成され実装基板との間で半導体発光素子を囲む形で配設されたドーム状の色変換部材とを備え、
実装基板は、前記一表面側に、半導体発光素子のカソードおよびアノードそれぞれと各別にバンプを介して接合される複数の配線パターンと、半導体発光素子から実装基板側へ放射された光を反射する反射膜とが設けられてなることを特徴とする発光装置。
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CN106098877A (zh) * | 2016-08-26 | 2016-11-09 | 广东德力光电有限公司 | 一种ZnO基倒装LED芯片及其制作方法 |
JP7046834B2 (ja) * | 2016-12-20 | 2022-04-04 | スタンレー電気株式会社 | Iii族窒化物発光素子及び該発光素子の製造方法 |
CN112786643B (zh) * | 2018-03-20 | 2023-06-13 | 厦门市三安光电科技有限公司 | 微发光元件、微发光二极管及其转印方法 |
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EP2346096A4 (en) | 2014-05-21 |
EP2346096A1 (en) | 2011-07-20 |
US8395173B2 (en) | 2013-03-12 |
US20110215296A1 (en) | 2011-09-08 |
KR20110069157A (ko) | 2011-06-22 |
JP2010135746A (ja) | 2010-06-17 |
KR101228130B1 (ko) | 2013-01-31 |
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