WO2010038372A1 - Surface treatment apparatus - Google Patents
Surface treatment apparatus Download PDFInfo
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- WO2010038372A1 WO2010038372A1 PCT/JP2009/004634 JP2009004634W WO2010038372A1 WO 2010038372 A1 WO2010038372 A1 WO 2010038372A1 JP 2009004634 W JP2009004634 W JP 2009004634W WO 2010038372 A1 WO2010038372 A1 WO 2010038372A1
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- gas
- opening
- processing
- carry
- treatment
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- 238000004381 surface treatment Methods 0.000 title claims description 26
- 238000011282 treatment Methods 0.000 claims abstract description 41
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 113
- 238000006243 chemical reaction Methods 0.000 description 21
- 229910052731 fluorine Inorganic materials 0.000 description 18
- 239000011737 fluorine Substances 0.000 description 18
- 238000000926 separation method Methods 0.000 description 18
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 16
- 238000011084 recovery Methods 0.000 description 14
- 239000002994 raw material Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32376—Scanning across large workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
Definitions
- the present invention relates to an apparatus for treating a surface of an object to be treated by bringing a treatment gas into contact with the surface of the object to be treated, and particularly to a surface treatment apparatus suitable for treatment using a toxic or corrosive treatment gas.
- An apparatus for performing a surface treatment such as etching, cleaning, surface modification, film formation, etc. by spraying a processing gas on an object to be processed such as a glass substrate or a semiconductor wafer is known.
- the processing gas used for this type of surface treatment often contains components that are unsafe or environmentally undesirable when leaked to the outside. Therefore, generally, the processing space is surrounded by a processing tank (chamber) to prevent the processing gas from leaking to the outside.
- the surface treatment apparatuses of Patent Documents 1 and 2 are provided with an inlet for introducing a workpiece into a treatment tank (chamber) and an outlet for leading the workpiece.
- the inlet and outlet are slit-shaped.
- Relaxation chambers are provided at both ends of the treatment tank to alleviate the outflow of plasma generation gas and the inflow of outside air into the treatment tank.
- the gas inside the treatment tank is discharged from the exhaust port.
- the surface treatment apparatus of Patent Document 3 includes an inner tank that surrounds the discharge plasma generation unit and an outer tank that surrounds the inner tank.
- the internal pressure of the space between the outer tub and the inner tub is lower than the inner pressure of the inner tub and lower than the external pressure.
- Japanese Patent No. 4058857 (FIG. 9) Japanese Patent No. 3994596 (FIG. 7) JP 2003-142298 A
- the treatment tank needs an opening for taking in and out the object to be treated.
- the processing gas in the processing tank may leak from this opening.
- the flow of the gas at the opening can be directed from the outside of the processing tank to the inside of the processing tank.
- the inflow gas from the opening tends to be turbulent. If it does so, the gas distribution in a processing tank will become unstable. Further, when the outside air outside the processing tank is disturbed, the disturbance may propagate to the inside of the processing tank through the opening.
- the inventor has confirmed a phenomenon in which when a vortex is formed outside the opening, the gas inside the opening becomes a vortex and exits from the opening.
- This invention is made
- the present invention provides an apparatus for treating a surface by bringing a treatment gas into contact with the surface of an object to be treated.
- a treatment tank having an opening for carrying in or carrying out the object to be treated along the carrying direction and provided with a treatment space for performing the surface treatment inside;
- a supply system for supplying a processing gas to the processing space;
- An exhaust system for discharging gas from the inside of the treatment tank;
- the opening of the processing tank is defined by a pair of rectifying surfaces facing each other in a facing direction orthogonal to the transport direction with a facing distance, and a depth along the transport direction of the opening is the facing It is characterized by being at least twice the distance.
- the gas flow from the outside toward the inside of the treatment tank can be formed at the opening by the exhaust by the exhaust system. Thereby, it can prevent that process gas leaks outside from the said opening.
- the flow of the gas flowing into the processing tank from the opening can be stabilized by the pair of rectifying surfaces, the inflowing gas can be prevented from becoming turbulent, or the inflowing gas can be brought close to a laminar flow. Therefore, the gas distribution in the processing tank and thus in the processing space can be stabilized. Thereby, the stability of the surface treatment can be ensured.
- the inside of the treatment tank can be prevented from being affected by the outside.
- the turbulence when turbulence of gas such as vortex occurs outside the processing tank, the turbulence can be prevented from propagating to the inside of the processing tank through the opening, and the gas inside the processing tank becomes vortex or the like and the opening It is possible to prevent leakage through the outside. As a result, leakage of the processing gas and the processed gas can be prevented more reliably.
- the depth of the opening is 6 to 10 times the opposing distance. As a result, the gas flow at the opening can be more reliably stabilized.
- the shape of the opening is preferably rectangular.
- the facing distance is defined as an average value.
- the depth of the opening is preferably at least twice the average value of the facing distance, and more preferably the depth of the opening is 6 to 10 times the average value of the facing distance.
- the gas flow at the opening for carrying in or carrying out the object to be processed can be stabilized.
- FIG. 4 is an enlarged cross-sectional view of a carry-in opening of a processing tank, showing a second embodiment of the present invention. It is an expanded sectional view of a loading opening of a processing tub showing a 3rd embodiment of the present invention.
- FIG. 1 shows a first embodiment of the present invention.
- the to-be-processed object 9 of this embodiment is comprised with the glass substrate for flat panel displays, this invention is not limited to this, For example, various things, such as a semiconductor wafer and a continuous sheet-like resin film, etc. It can be applied to any workpiece.
- the surface treatment content of this embodiment is etching of silicon (not shown) coated on the surface of the glass substrate 9, but the present invention is not limited to this, and etching of silicon oxide or silicon nitride is not limited thereto. It is also applicable to various surface treatments such as film formation, cleaning, water repellency, and hydrophilicity.
- the length (dimension in the left-right direction in FIG. 1) of the workpiece 9 made of the glass substrate for flat panel display is, for example, 1500 mm
- the width (dimension in the direction orthogonal to the paper surface in FIG. 1) is, for example, 1100 mm.
- the thickness is about 0.7 mm.
- the surface treatment apparatus 1 includes a treatment tank 10, a transfer means 20, a supply system 30, and an exhaust system 40.
- the processing tank 10 is in the shape of a container that can accommodate the workpiece 9 inside.
- a processing space 19 is formed at a substantially central portion inside the processing tank 10. In other words, the processing tank 10 surrounds the processing space 19.
- the processing space 19 is defined between a supply nozzle 33 which will be described later and a workpiece 9 to be disposed below the supply nozzle 33.
- the thickness (vertical dimension) of the processing space 19 is exaggerated.
- the actual thickness of the processing space 19 is about 0.5 to 5 mm.
- a carry-in opening 13 is formed in the wall 11 on one end side (right side in FIG. 1) of the treatment tank 10.
- a carry-out opening 14 is formed in the wall 12 on the other end side (left side in FIG. 1) of the processing tank 10.
- the carry-in / out openings 13 and 14 extend in a direction perpendicular to the paper surface of FIG.
- the workpiece 9 can enter and exit the processing tank 10 through the loading / unloading openings 13 and 14.
- the carry-in / out openings 13 and 14 are always open.
- the treatment tank 10 is not provided with a door for opening and closing the carry-in / out openings 13 and 14.
- the structure of the carry-in / out openings 13 and 14 will be described in detail later.
- the conveying means 20 is constituted by a roller conveyor.
- a large number of rollers 21 of the roller conveyor are arranged at intervals on the left and right with the axis line oriented in a direction orthogonal to the paper surface of FIG.
- a part of the roller conveyor 20 is disposed inside the processing tank 10.
- the workpiece 9 is placed on the roller 21 and conveyed from right to left (conveying direction) in FIG. 1, carried into the treatment tank 10 through the carry-in opening 13, and placed in the treatment space 19. It is unloaded from the processing tank 10 through the unloading opening 14.
- the conveying means 20 is not limited to a roller conveyor, and may be constituted by a movable stage, a floating stage, a robot arm, or the like.
- the supply system 30 includes a source gas supply unit 31 and a supply nozzle 33.
- a supply path 32 extends from the source gas supply unit 31.
- a supply path 32 is connected to the supply nozzle 33.
- the supply nozzle 33 is disposed on the ceiling of the processing tank 10. Although detailed illustration is omitted, the supply nozzle 33 extends in a direction orthogonal to the paper surface of FIG.
- the supply system 30 supplies the processing space 19 with a processing gas including a reaction component corresponding to the processing content, a raw material component of the reaction component, and the like.
- Process gas components such as the above reaction components and raw material components
- a fluorine-based reaction component and an oxidizing reaction component are used as reaction components.
- the fluorine-based reaction component include HF, COF 2 and fluorine radicals.
- the fluorine-based reaction component can be generated, for example, by humidifying a fluorine-based raw material with water (H 2 O) and then plasmatizing (including decomposition, excitation, activation, ionization, etc.).
- CF 4 is used as the fluorine-based material.
- PFC perfluorocarbon
- C 2 F 6 , C 3 F 8 , C 3 F 8 may be used
- CHF 3 , CH 2 F 2 , CH 3 F may be used HFC (hydrofluorocarbon) etc.
- SF 6, NF 3 XeF fluorine-containing compounds other than PFC and HFC such as 2.
- the fluorine-based raw material may be diluted with a diluent gas.
- a diluent gas for example, a rare gas such as Ar or He or N 2 is used.
- a dilution gas for example, a rare gas such as Ar or He or N 2 is used.
- a OH group-containing compound such as alcohol may be used as an additive to the fluorine-based raw material.
- the oxidizing reaction component examples include O 3 and O radicals.
- O 3 is used as the oxidizing reaction component.
- O 3 can be generated by an ozonizer using oxygen (O 2 ) as a raw material.
- the oxidizing reaction component may be generated by converting oxygen-based raw material such as O 2 into plasma.
- Plasma conversion of the fluorine-based material or oxygen-based material can be performed by introducing a gas containing the material into a plasma space between a pair of electrodes of a plasma generation apparatus.
- the plasmification is preferably performed near atmospheric pressure.
- the vicinity of atmospheric pressure refers to a range of 1.013 ⁇ 10 4 to 50.663 ⁇ 10 4 Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 1.333 ⁇ 10 4 to 10.664 ⁇ 10 4 Pa is preferable, and 9.331 ⁇ 10 4 to 10.9797 ⁇ 10 4 Pa is more preferable.
- the raw material gas supply unit 31, CF 4 fluorine raw material is diluted with Ar, and the addition of H 2 O, to obtain a fluorine-based material gas (CF 4 + Ar + H 2 O).
- This fluorine-based source gas is guided to the supply nozzle 33 through the supply path 32.
- the supply nozzle 33 is provided with a pair of electrodes.
- the fluorine-based source gas is turned into plasma between the electrodes.
- the supply nozzle 33 also serves as a plasma generation device. Thereby, fluorine-type reaction components, such as HF, are generated.
- O 3 is separately generated as an oxidizing reaction component by an ozonizer, introduced into the supply nozzle 33, and mixed with the plasmaized gas.
- the process gas containing a fluorine-based reactive components (HF, etc.) with an oxidizing reactant (O 3 or the like) is generated.
- the processing gas also includes source gas components (CF 4 , H 2 O, Ar, O 2, etc.). This processing gas is blown into the processing space 19 from the outlet of the bottom surface (tip surface) of the supply nozzle 33.
- the supply flow rate of the processing gas is, for example, about 32 slm.
- a processing gas containing a fluorine-based reaction component and an oxidizing reaction component may be generated in the gas supply unit 31, and this processing gas may be sent to the supply nozzle 33 through the supply path 32 and blown out.
- the processing gas blown from the supply nozzle 33 is blown to the object 9 to be processed in the processing space 19, and the object 9 is surface-treated.
- silicon is oxidized by an oxidizing component (such as O 3 ) in the processing gas, the silicon oxide reacts with a fluorine-based reaction component (such as HF) in the processing gas, and the volatile component SiF 4 is changed. Generated. Thereby, the silicon layer on the surface of the workpiece 9 can be removed.
- An exhaust port 43 is provided at, for example, a substantially central portion of the bottom of the processing tank 10.
- An exhaust passage 42 extends from the exhaust port 43.
- a filter unit 45 and an exhaust pump 41 are sequentially provided in the exhaust path 42.
- a local exhaust port is formed on the bottom surface of the supply nozzle 33 adjacent to the processing gas blowing port.
- a suction path connected to the local exhaust port is drawn from the upper part of the supply nozzle 33. This suction path joins the exhaust path 42 on the upstream side (exhaust port 43 side) from the filter portion 45.
- the local exhaust port and the suction path also constitute an element of the exhaust system 40.
- the filter unit 45 is a filter that removes dust and the like in exhaust gas, a scrubber that removes HF and the like in exhaust gas, a mist trap that removes H 2 O in exhaust gas, and O 3 in exhaust gas. Including ozone killer etc.
- the gas in the processing tank 10 is sucked into the exhaust path 42 from the exhaust port 43.
- the processing gas hereinafter referred to as “processed gas”
- the treated gas includes components of the processing gas (HF, O 3 , CF 4 , H 2 O, Ar, etc.) and by-products (SiF 4 etc.) due to the surface treatment reaction. Part of the processed gas may leak from the processing space 19, and such processed gas is sucked from the exhaust port 43.
- the exhaust gas flow rate by the exhaust system 40 is set to a small amount so that the gas in the processing tank 10 does not leak from the carry-in / out openings 13 and 14.
- the exhaust gas flow rate is made larger than the supply flow rate of the processing gas, and the atmospheric gas (air) outside the processing tank 10 passes through the carry-in / out openings 13 and 14. It flows into the inside of the processing tank 10.
- the supply flow rate of the processing gas is about 32 slm as described above, whereas the exhaust gas flow rate of the first exhaust system 40 is, for example, about 200 to 400 slm.
- the component with the largest proportion in the exhaust gas is nitrogen.
- the exhaust gas further contains components of processed gas (HF, O 3 , CF 4 , H 2 O, Ar, SiF 4, etc.).
- the surface treatment apparatus 1 further includes a reuse unit 50.
- the reuse unit 50 collects the reaction component of the processing gas from the gas exhausted by the exhaust system 40. More specifically, the reuse unit 50 includes a separation and recovery device 51.
- the separation / recovery device 51 is provided with a separation membrane 52.
- the inside of the separation / recovery device 51 is partitioned into a concentration chamber 53 and a dilution chamber 54 by the separation membrane 52.
- As the separation membrane 52 for example, a glassy polymer membrane (see Japanese Patent No. 3151151) is used.
- the speed at which the separation membrane 52 permeates CF 4 (reaction component) is relatively small, and the speed at which nitrogen (impurities) permeate is relatively large.
- An exhaust passage 42 downstream from the exhaust pump 41 is connected to the concentration chamber 53.
- Exhaust gas from the exhaust pump 41 is introduced into the concentrating chamber 53, and is separated by the separation membrane 52 into recovered gas that remains in the concentrating chamber 53 and discharged gas that passes through the separation membrane 52 and enters the dilution chamber 54.
- the reuse unit 50 may have a plurality of separation / recovery devices 51.
- the plurality of separation and recovery devices 51 may be connected in series, may be connected in parallel, or may be connected so that the series and the parallel are combined.
- the collection path 55 extends from the downstream end of the concentration chamber 53.
- the recovery path 55 is connected to the source gas supply unit 31.
- the discharge path 46 extends from the dilution chamber 54.
- the discharge path 46 is connected to the abatement equipment 47.
- an opening 16 is formed in the carry-in side wall 11.
- the opening 16 has a slit shape extending in the width direction of the carry-in side wall 11 (the left-right direction in FIG. 2 and the direction perpendicular to the plane of FIG. 3).
- a pair of rectifying plates 15 and 15 are attached on the carry-in side wall 11.
- the upper rectifying plate 15 is denoted by “A”
- the lower rectifying plate 15 is denoted by “B”.
- the upper rectifying plate 15A is divided into two upper rectifying plate portions 15a and 15a.
- each of the rectifying plate portions 15 a and 15 a has a thin flat plate shape extending in the width direction of the carry-in side wall 11.
- the two upper rectifying plate portions 15a and 15a sandwich the portion above the opening 16 of the carry-in side wall 11 from the outside (right in FIG. 3) and the inside (left in FIG. 3). .
- the lower surfaces of the upper rectifying plate portions 15 a and 15 a are flush with the upper edge of the opening 16.
- the upper rectifying surface 17 is constituted by the lower surfaces of the upper rectifying plate portions 15 a and 15 a that are flush with each other and the upper edge of the opening 16.
- the upper rectifying surface 17 extends horizontally in the width direction of the carry-in side wall 11.
- the lower rectifying plate 15B is divided into two lower rectifying plate portions 15b and 15b. As shown in FIG. 2, each of the rectifying plate portions 15 b and 15 b has a thin flat plate shape extending in the width direction of the carry-in side wall 11. As shown in FIG. 3, the two lower rectifying plate portions 15b and 15b sandwich the portion below the opening 16 of the carry-in side wall 11 from the outside (right in FIG. 3) and the inside (left in FIG. 3). It is out. The upper surfaces of the lower rectifying plate portions 15 b and 15 b are flush with the lower end edge of the opening 16. The lower rectifying surface 18 is configured by the upper surfaces of the lower rectifying plate portions 15 b and 15 b that are flush with each other and the lower end edge of the opening 16. The lower rectifying surface 18 extends horizontally in the width direction of the carry-in side wall 11.
- the upper rectifying surface 17 and the lower rectifying surface 18 are parallel to each other and are opposed to each other in the vertical direction (opposite direction orthogonal to the conveying direction of the workpiece 9 (left-right direction in FIG. 3)).
- a carry-in opening 13 is formed between the pair of rectifying surfaces 17 and 18.
- the upper rectifying surface 17 defines the upper edge of the opening 13.
- the lower rectifying surface 18 defines the lower edge of the opening 13.
- the length L along the conveyance direction (left and right direction in FIG. 3) of the rectifying surfaces 17 and 18 and the depth L along the conveyance direction of the opening 13 are the distance D between the rectifying surfaces 17 and 18 and the opening 13. It is more than twice the upper and lower thickness D (L ⁇ 2 ⁇ D), preferably more than 6 times (L ⁇ 6 ⁇ D).
- the upper limit of the depth L of the opening 13 is appropriately set in consideration of the attachment property of the current plate 15 and the interference with the roller 21.
- the upper limit of the depth L of the opening 13 is preferably about 15 times the facing distance D, and more preferably about 10 times.
- the carry-out opening 14 has the same structure as the carry-in opening 13. That is, an opening 16 is formed in the carry-out side wall 12, a rectifying plate 15 is attached to the opening 16, and a pair of rectifying surfaces 17 and 18 that are vertically opposed to each other are formed, and between the rectifying surfaces 17 and 18.
- a carry-out opening 14 is defined.
- the depth L of the carry-out opening 14 is 2 times or more, preferably 6 times or more the thickness D.
- the workpiece 9 is carried into the treatment tank 10 from the carry-in opening 13 by the carrying means 20 and introduced into the treatment space 19. Further, the processing gas is supplied to the processing space 19 by the supply system 30. This processing gas comes into contact with the workpiece 9 and surface processing such as etching is performed.
- the processed object 9 after processing is carried out from the processing tank 10 through the carry-out opening 14.
- a plurality of objects 9 to be processed are arranged in a line on the roller conveyor 20 at intervals, and sequentially carried into the treatment tank 10 and subjected to surface treatment, and then carried out of the treatment tank 10.
- the exhaust system 40 discharges the gas in the processing tank 10 (including the processed gas in the processing space 19).
- the gas outside the processing tank 10 flows into the processing tank 10 through the loading / unloading openings 13 and 14. Therefore, the gas flow in the carry-in / out openings 13 and 14 can be directed from the outside to the inside (inside the treatment tank 10). Thereby, it is possible to prevent the processing gas in the processing tank 10 or the processed gas from leaking out from the loading / unloading openings 13 and 14.
- the depth L of the carry-in / out openings 13 and 14 is at least twice the thickness D (L ⁇ 2 ⁇ D), and preferably at least six times (L ⁇ 6 ⁇ D).
- the flow of gas flowing in from 14 can be stabilized, and the inflowing gas can be prevented from becoming turbulent.
- the state of the inflowing gas can be brought close to laminar flow. Therefore, the gas distribution in the processing tank 10 can be stabilized.
- the flow of the processing gas in the processing space 19 can be stabilized. Therefore, the stability of the surface treatment can be ensured.
- the inside of the processing tank 10 can be prevented from being affected by the outside.
- the turbulence when turbulence of gas such as vortex occurs outside the processing tank 10, the turbulence can be prevented from propagating into the processing tank 10 through the openings 13 and 14, and the gas inside the processing tank 10 can be prevented. It is possible to prevent leakage from the openings 13 and 14 due to a vortex or the like. As a result, leakage of the processing gas and the processed gas can be prevented more reliably.
- the gas discharged from the processing tank 10 by the exhaust system 40 is filtered by the filter unit 45, compressed by the exhaust pump 41, and introduced into the separation / collector 51.
- the separation / collector 51 the exhaust gas is separated into a high CF 4 concentration recovery gas and a low CF 4 concentration discharge gas.
- the recovered gas is sent to the raw material gas supply unit 31 through the recovery path 55.
- the reaction component (CF 4 ) recovered by the separation / recovery device 51 can be returned to the recovery path 55 and reused. Therefore, the total amount of CF 4 used in the surface treatment apparatus 1 can be reduced, and the running cost can be suppressed.
- the released gas is sent to the removal equipment 47 through the release passage 46 and subjected to the removal treatment, and then released to the atmosphere.
- the exhaust flow rate of the exhaust system 40 is so small that the treated gas does not leak from the carry-in / out openings 13 and 14. Therefore, the load on the separation / recovery device 51 can be reduced. In addition, the load on the abatement equipment 47 can be reduced. Thereby, the separation recovery device 51 and the abatement equipment 47 can be reduced in size.
- FIG. 4 shows a modification of the carry-in / out opening.
- the upper and lower rectifying plates 15 are not divided into the rectifying plate portions 15a and 15b, but are formed as an integral flat plate.
- the upper rectifying plate 15 ⁇ / b> A is attached to the outer side surface of the upper side portion of the opening 16 of the carry-in side wall 11.
- the lower surface of the upper rectifying plate 15A and the upper edge of the opening 16 are flush with each other.
- the upper rectifying surface 17 is constituted by the lower surface of the upper rectifying plate 15A and the upper edge of the opening 16 that are flush with each other.
- a lower rectifying plate 15B is attached to the outer side surface of the lower portion than the opening 16 of the carry-in side wall 11.
- the upper surface of the lower rectifying plate 15B and the lower end edge of the opening 16 are flush with each other.
- the lower rectifying surface 18 is configured by the upper surface of the lower rectifying plate 15B and the lower end edge of the opening 16 that are flush with each other.
- the current plate 15 on the carry-out side wall 12 is the same as the current plate 15 on the carry-in side wall 11 shown in FIG.
- the depth L of the carry-in / out openings 13 and 14 is not less than twice the thickness D (L ⁇ 2 ⁇ D), preferably not less than 6 times (L ⁇ 6 ⁇ D). The same.
- FIG. 5 shows another modification of the carry-in / out opening.
- the opening 16 of the carry-in side wall 11 is opened up and down larger than the above-described embodiment (FIGS. 3 and 4).
- Each of the upper and lower rectifying plates 15 has an integral flat plate shape.
- the central portion of the upper rectifying plate 15 ⁇ / b> A is attached to the upper end edge of the opening 16.
- the upper rectifying surface 17 is constituted only by the lower surface of the upper rectifying plate 15A.
- a central portion of the lower rectifying plate 15 ⁇ / b> B is attached to the lower end edge of the opening 16.
- the lower rectifying surface 18 is constituted only by the upper surface of the lower rectifying plate 15B.
- a carry-in opening 13 is defined between the upper and lower rectifying plates 15 and 15.
- the carry-out opening 14 is also defined in the same manner as the carry-in opening 13 shown in FIG.
- the length of the current plate 15 along the conveyance direction of the workpiece 9 is equal to the depth L of the carry-in / out openings 13 and 14.
- the depth L of the carry-in / out openings 13 and 14 is at least twice the thickness D (L ⁇ 2 ⁇ D), preferably at least six times (L ⁇ 6 ⁇ D). Is the same.
- the carry-in opening 13 and the carry-out opening 14 may be configured by one common opening.
- the conveyance means 20 carries the workpiece 9 into the treatment tank 10 from the common opening and arranges it in the treatment space 19, and after the surface treatment, carries the workpiece 9 out of the common opening to the outside. It may be.
- the worker 9 may carry the workpiece 9 into and out of the processing tank 10 in addition to using the conveying means 20.
- the positions of the outer end portions of the upper and lower rectifying plates 15A and 15B or the positions of the inner end portions do not have to be aligned in the conveying direction of the workpiece 9.
- Either one of the upper and lower rectifying plates 15A and 15B may protrude outside the processing tank 10 or inside the processing tank 10 from the other.
- the depth (L) along the transport direction of the space (opening 13 or 14) between the portions where the both rectifying plates 15 and 15 overlap each other in the opposing direction is the opposing distance between the rectifying plates 15 and 15. It may be 2 times or more, preferably 6 times or more of (D).
- the present invention is applicable, for example, to the manufacture of flat panel displays (FPD) and semiconductor wafers.
- FPD flat panel displays
- semiconductor wafers semiconductor wafers
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Abstract
Description
特許文献3の表面処理装置は、放電プラズマ発生部を囲む内槽と、この内槽を囲む外槽とを備えている。外槽と内槽との間の空間の内圧は、内槽の内圧より低く、かつ外気圧より低くなっている。この結果、処理ガスが内槽から外槽と内槽との間の空間に流出し、かつ外気が外槽に流入するようになっている。 The surface treatment apparatuses of Patent Documents 1 and 2 are provided with an inlet for introducing a workpiece into a treatment tank (chamber) and an outlet for leading the workpiece. The inlet and outlet are slit-shaped. Relaxation chambers are provided at both ends of the treatment tank to alleviate the outflow of plasma generation gas and the inflow of outside air into the treatment tank. The gas inside the treatment tank is discharged from the exhaust port.
The surface treatment apparatus of Patent Document 3 includes an inner tank that surrounds the discharge plasma generation unit and an outer tank that surrounds the inner tank. The internal pressure of the space between the outer tub and the inner tub is lower than the inner pressure of the inner tub and lower than the external pressure. As a result, the processing gas flows out from the inner tank to the space between the outer tank and the inner tank, and the outside air flows into the outer tank.
本発明は、上記事情に鑑みてなされたものであり、その目的とするところは、表面処理用の処理槽に設けた、被処理物の出し入れ用の開口でのガスの流れを安定させることにある。 The treatment tank needs an opening for taking in and out the object to be treated. The processing gas in the processing tank may leak from this opening. In order to prevent such leakage, it is conceivable to connect an exhaust system to the treatment tank and exhaust the gas from the treatment tank. Thereby, the flow of the gas at the opening can be directed from the outside of the processing tank to the inside of the processing tank. However, the inflow gas from the opening tends to be turbulent. If it does so, the gas distribution in a processing tank will become unstable. Further, when the outside air outside the processing tank is disturbed, the disturbance may propagate to the inside of the processing tank through the opening. The inventor has confirmed a phenomenon in which when a vortex is formed outside the opening, the gas inside the opening becomes a vortex and exits from the opening.
This invention is made | formed in view of the said situation, The place made into the objective is to stabilize the flow of the gas in the opening for taking in / out of to-be-processed object provided in the processing tank for surface treatment. is there.
被処理物を搬送方向に沿って搬入し又は搬出する開口を有し、かつ内部に前記表面処理を行なう処理空間が設けられた処理槽と、
前記処理空間に処理ガスを供給する供給系と、
前記処理槽の内部からガスを排出する排気系と、
を備え、前記処理槽の前記開口が、互いに前記搬送方向と直交する対向方向に対向距離を隔てて対向する一対の整流面によって画成され、前記開口の前記搬送方向に沿う奥行きが、前記対向距離の2倍以上であることを特徴とする。 In order to solve the above problems, the present invention provides an apparatus for treating a surface by bringing a treatment gas into contact with the surface of an object to be treated.
A treatment tank having an opening for carrying in or carrying out the object to be treated along the carrying direction and provided with a treatment space for performing the surface treatment inside;
A supply system for supplying a processing gas to the processing space;
An exhaust system for discharging gas from the inside of the treatment tank;
The opening of the processing tank is defined by a pair of rectifying surfaces facing each other in a facing direction orthogonal to the transport direction with a facing distance, and a depth along the transport direction of the opening is the facing It is characterized by being at least twice the distance.
前記開口の形状は、長方形が好ましい。
前記対向距離が、場所によって異なる場合、対向距離は平均した値と定義する。前記開口の奥行きが、前記対向距離の平均値の2倍以上であることが好ましく、前記開口の奥行きが、前記対向距離の平均値の6~10倍であることが一層好ましい。 More preferably, the depth of the opening is 6 to 10 times the opposing distance. As a result, the gas flow at the opening can be more reliably stabilized.
The shape of the opening is preferably rectangular.
When the facing distance varies depending on the location, the facing distance is defined as an average value. The depth of the opening is preferably at least twice the average value of the facing distance, and more preferably the depth of the opening is 6 to 10 times the average value of the facing distance.
図1は、本発明の第1実施形態を示したものである。この実施形態の被処理物9は、フラットパネルディスプレイ用のガラス基板で構成されているが、本発明は、これに限定されるものではなく、例えば半導体ウェハ、連続シート状の樹脂フィルム等、種々の被処理物に適用できる。この実施形態の表面処理内容は、ガラス基板9の表面に被膜されたシリコン(図示省略)のエッチングであるが、本発明は、これに限定されるものではなく、酸化シリコンや窒化シリコンのエッチングにも適用でき、エッチングに限られず、成膜、洗浄、撥水化、親水化等、種々の表面処理に適用できる。 Embodiments of the present invention will be described below.
FIG. 1 shows a first embodiment of the present invention. Although the to-be-processed
搬送手段20は、ローラーコンベアに限られず、移動式ステージ、浮上ステージ、ロボットアーム等で構成されていてもよい。 The conveying means 20 is constituted by a roller conveyor. A large number of
The conveying means 20 is not limited to a roller conveyor, and may be constituted by a movable stage, a floating stage, a robot arm, or the like.
を除去するスクラバー、排出ガス中のH2Oを除去するミストトラップ、排ガス中のO3
を除去するオゾンキラー等を含む。 The
Including ozone killer etc.
図2及び図3に示すように、搬入側壁11には開口部16が形成されている。開口部16は、搬入側壁11の幅方向(図2の左右方向、図3の紙面直交方向)に延びるスリット状になっている。 The structure of the carry-in / out
As shown in FIGS. 2 and 3, an
図4は、搬入出開口の変形例を示したものである。この変形例では、上下の各整流板15が、整流板部15a,15bに分割されておらず、一体の平板状になっている。上側の整流板15Aが、搬入側壁11の開口部16より上側部分の外側面に取り付けられている。上側整流板15Aの下面と開口部16の上端縁とが面一になっている。互いに面一をなす上側整流板15Aの下面及び開口部16の上端縁によって、上側整流面17が構成されている。 Next, another embodiment of the present invention will be described. In the following embodiments, the same reference numerals are given to the drawings for the same configurations as those already described, and the description thereof is omitted.
FIG. 4 shows a modification of the carry-in / out opening. In this modification, the upper and
搬入出開口13,14の奥行きLが、厚さDの2倍以上であり(L≧2×D)、好ましくは6倍以上(L≧6×D)である点は、第1実施形態と同じである。なお、整流板15を、壁11,12の外側面にではなく、壁11,12の内側面から処理槽10の内部に突出するように取り付けてもよい。 Although illustration is omitted, the
The depth L of the carry-in / out
この形態では、整流板15の被処理物9の搬送方向に沿う長さが、搬入出開口13,14の奥行きLと一致している。搬入出開口13,14の奥行きLが、厚さDの2倍以上であり(L≧2×D)、好ましくは6倍以上(L≧6×D)である点は、既述の実施形態と同じである。 Although illustration is omitted, the carry-out
In this embodiment, the length of the
例えば、搬入開口13と搬出開口14が、1つの共通の開口で構成されていてもよい。搬送手段20が、被処理物9を上記共通の開口から処理槽10の内部に搬入して処理空間19に配置し、表面処理後、被処理物9を上記共通の開口から外部へ搬出することにしてもよい。被処理物9の処理槽10への搬入及び処理槽10からの搬出は、搬送手段20を用いる他、作業者が行なってもよい。 The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, the carry-in
9 被処理物
10 処理槽
11 搬入側壁
12 搬出側壁
13 搬入開口
14 搬出開口
15 整流板
15a 上側整流板部
15b 下側整流板部
16 開口部
17 上側整流面
18 下側整流面
19 処理空間
20 搬送手段
30 供給系
33 供給ノズル
40 排気系
50 再利用部
51 分離回収器
D 整流面の対向距離
L 開口の奥行き DESCRIPTION OF SYMBOLS 1
Claims (2)
- 被処理物の表面に処理ガスを接触させ、前記表面を処理する装置において、
被処理物を搬送方向に沿って搬入し又は搬出する開口を有し、かつ内部に前記表面処理を行なう処理空間が設けられた処理槽と、
前記処理空間に処理ガスを供給する供給系と、
前記処理槽の内部からガスを排出する排気系と、
を備え、前記処理槽の前記開口が、互いに前記搬送方向と直交する対向方向に対向距離を隔てて対向する一対の整流面によって画成され、前記開口の前記搬送方向に沿う奥行きが、前記対向距離の2倍以上であることを特徴とする表面処理装置。 In an apparatus for treating the surface by bringing a treatment gas into contact with the surface of the workpiece,
A treatment tank having an opening for carrying in or carrying out the object to be treated along the carrying direction and provided with a treatment space for performing the surface treatment inside;
A supply system for supplying a processing gas to the processing space;
An exhaust system for discharging gas from the inside of the treatment tank;
The opening of the processing tank is defined by a pair of rectifying surfaces facing each other in a facing direction orthogonal to the transport direction with a facing distance, and a depth along the transport direction of the opening is the facing A surface treatment apparatus characterized by being at least twice the distance. - 前記開口の奥行きが、前記対向距離の6倍以上であることを特徴とする請求項1に記載の表面処理装置。 The surface treatment apparatus according to claim 1, wherein a depth of the opening is 6 times or more of the facing distance.
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KR101452316B1 (en) * | 2012-03-30 | 2014-10-22 | 세메스 주식회사 | Apparatus and method for treating a substrate |
KR101654293B1 (en) * | 2013-01-16 | 2016-09-06 | 주식회사 잉크테크 | Wet process chamber and wet process apparatus having the same |
JP6020483B2 (en) * | 2014-02-14 | 2016-11-02 | トヨタ自動車株式会社 | Surface treatment apparatus and surface treatment method |
JP6700605B2 (en) * | 2016-11-16 | 2020-05-27 | 日本電気硝子株式会社 | Glass substrate manufacturing method |
CN107833830B (en) * | 2017-11-22 | 2021-03-12 | 上海华力微电子有限公司 | Method for improving integrated etching aggregation residual defect |
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JPH05235520A (en) * | 1992-02-20 | 1993-09-10 | Matsushita Electric Works Ltd | Treatment of circuit board by use of plasma |
JP2005005579A (en) * | 2003-06-13 | 2005-01-06 | Sharp Corp | Plasma processing apparatus |
JP2006164683A (en) * | 2004-12-06 | 2006-06-22 | Sharp Corp | Inline type plasma processing device |
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WO2006053218A2 (en) * | 2004-11-10 | 2006-05-18 | Daystar Technologies, Inc. | Pressure control system in a photovoltaic substrate deposition |
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JPH05235520A (en) * | 1992-02-20 | 1993-09-10 | Matsushita Electric Works Ltd | Treatment of circuit board by use of plasma |
JP2005005579A (en) * | 2003-06-13 | 2005-01-06 | Sharp Corp | Plasma processing apparatus |
JP2006164683A (en) * | 2004-12-06 | 2006-06-22 | Sharp Corp | Inline type plasma processing device |
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