WO2010025031A2 - Procédé pour correction de proximité optique, concept et fabrication d’un réticule à l’aide de la lithographie par projection de caractères - Google Patents

Procédé pour correction de proximité optique, concept et fabrication d’un réticule à l’aide de la lithographie par projection de caractères Download PDF

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Publication number
WO2010025031A2
WO2010025031A2 PCT/US2009/053327 US2009053327W WO2010025031A2 WO 2010025031 A2 WO2010025031 A2 WO 2010025031A2 US 2009053327 W US2009053327 W US 2009053327W WO 2010025031 A2 WO2010025031 A2 WO 2010025031A2
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WO
WIPO (PCT)
Prior art keywords
characters
patterns
character
glyphs
varying
Prior art date
Application number
PCT/US2009/053327
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English (en)
Other versions
WO2010025031A3 (fr
Inventor
Akira Fujimura
Lance Glasser
Takashi Mitsuhashi
Kazuyuki Hagiwara
Original Assignee
D2S, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/202,366 external-priority patent/US7759027B2/en
Priority claimed from US12/202,364 external-priority patent/US7759026B2/en
Priority claimed from US12/202,365 external-priority patent/US7901845B2/en
Application filed by D2S, Inc. filed Critical D2S, Inc.
Priority to EP09810440A priority Critical patent/EP2321701A2/fr
Priority to JP2011525072A priority patent/JP5676449B2/ja
Priority to CN2009801342427A priority patent/CN102138106A/zh
Publication of WO2010025031A2 publication Critical patent/WO2010025031A2/fr
Publication of WO2010025031A3 publication Critical patent/WO2010025031A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Definitions

  • the present disclosure is related to lithography, and more particularly to the design and manufacture of a surface which may be a reticle, a wafer, or any other surface, using character or cell projection lithography.
  • optical lithography may be used to fabricate the semiconductor devices.
  • Optical lithography is a printing process in which a lithographic mask or reticle is used to transfer patterns to a substrate such as a semiconductor or silicon wafer to create the integrated circuit.
  • substrates could include flat panel displays or even photomasks.
  • EUV extreme ultraviolet
  • X-ray lithography are considered types of optical lithography.
  • the reticle or multiple reticles may contain a circuit pattern corresponding to an individual layer of the integrated circuit and this pattern can be imaged onto a certain area on the substrate that has been coated with a layer of radiation- sensitive material known as photoresist or resist.
  • the layer may undergo various other processes such as etching, ion-implantation (doping), metallization, oxidation, and polishing. These processes are employed to finish an individual layer in the substrate. If several layers are required, then the whole process or variations thereof will be repeated for each new layer. Eventually, a combination of multiples of devices or integrated circuits will be present on the substrate. These integrated circuits may then be separated from one another by dicing or sawing and then may be mounted into individual packages. In the more general case, the patterns on the substrate may be used to define artifacts such as display pixels or magnetic recording heads.
  • maskless direct write may also be used to fabricate the semiconductor devices.
  • Maskless direct write is a printing process in which patterns are transferred to a substrate such as a semiconductor or silicon wafer to create the integrated circuit.
  • Other substrates could include flat panel displays, imprint masks for nano-imprinting, or even photomask. Desired patterns of a layer are written directly on the surface, which in this case is also the substrate.
  • the patterned layer is transferred the layer may undergo various other processes such as etching, ion-implantation (doping), metallization, oxidation, and polishing. These processes are employed to finish an individual layer in the substrate. If several layers are required, then the whole process or variations thereof will be repeated for each new layer.
  • Some of the layers may be written using optical lithography while others may be written using maskless direct write to fabricate the same substrate.
  • a combination of multiples of devices or integrated circuits will be present on the substrate. These integrated circuits are then separated from one another by dicing or sawing and then mounted into individual packages.
  • the patterns on the surface may be used to define artifacts such as display pixels or magnetic recording heads.
  • the lithographic mask or reticle comprises geometric patterns corresponding to the circuit components to be integrated onto a substrate.
  • the patterns used to manufacture the reticle may be generated utilizing CAD (computer-aided design) software or programs.
  • CAD computer-aided design
  • the CAD program may follow a set of predetermined design rules in order to create the reticle.
  • These rules are set by processing, design, and end-use limitations.
  • An example of an end-use limitation is defining the geometry of a transistor in a way in which it cannot sufficiently operate at the required supply voltage.
  • design rules can define the space tolerance between circuit devices or interconnect lines.
  • the design rules are, for example, used to ensure that the circuit devices or lines do not interact with one another in an undesirable manner.
  • the design rules are used so that lines do not get too close to each other in a way that may cause a short circuit.
  • the design rule limitations reflect, among other things, the smallest dimensions that can be reliably fabricated. When referring to these small dimensions, one usually introduces the concept of a critical dimension. These are, for instance, defined as the smallest width of a line or the smallest space between two lines, those dimensions requiring extraordinarily control.
  • One goal in integrated circuit fabrication by optical lithography is to reproduce the original circuit design on the substrate by use of the reticle.
  • Integrated circuit fabricators are always attempting to use the semiconductor wafer real estate as efficiently as possible.
  • Engineers keep shrinking the size of the circuits to allow the integrated circuits to contain more circuit elements and to use less power.
  • the critical dimensions of its corresponding mask pattern approaches the resolution limit of the optical exposure tool used in optical lithography.
  • the critical dimensions of the circuit layout become smaller and approach the resolution value of the exposure tool, the accurate transcription between the mask pattern and the actual circuit pattern developed on the resist layer becomes difficult.
  • OPC optical proximity correction
  • OPC adds sub-resolution lithographic features to mask patterns to reduce differences between the original mask pattern, that is, the design, and the final transferred circuit pattern on the substrate.
  • the sub-lithographic features interact with the original mask pattern and with each other and compensate for proximity effects to improve the final transferred circuit pattern.
  • One feature that is used to improve the transfer of the pattern is a sub-resolution assist feature (SRAF).
  • SRAF sub-resolution assist feature
  • Serifs are small features that can be positioned on a corner of a pattern to sharpen the corner in the final transferred image. As the limits of optical lithography are being extended far into the sub-wavelength regime, the OPC features must be made more and more complex in order to compensate for even more subtle interactions and effects.
  • a line end will have different size serifs depending on what is near it on the reticle. This is even though the objective might be to produce exactly the same shape on the wafer.
  • These slight but critical variations are important and have prevented others from being able to form reticle patterns.
  • OPC-decorated patterns to be written on a reticle in terms of main features, that is features that reflect the design before OPC decoration, and OPC features, where OPC features might include serifs, jogs, and SRAF.
  • main features that is features that reflect the design before OPC decoration
  • OPC features might include serifs, jogs, and SRAF.
  • a typical slight variation in OPC decoration from neighborhood to neighborhood might be 5% to 80% of a main feature size. Note that for clarity, variations in the design of the OPC are what is being referenced.
  • Manufacturing variations such as line-edge roughness and corner rounding, will also be present in the actual surface patterns.
  • these OPC variations produce substantially the same patterns on the wafer what is meant is that the geometry on the wafer is targeted to be the same within a specified error, which depends on the details of the function that that geometry is designed to perform, e.g., a transistor or a wire. Nevertheless, typical specifications are in the 2%-50% of a main feature range. There are numerous manufacturing factors that also cause variations, but the OPC component of that overall error is often in the range just listed.
  • VSD variable shape beam
  • a precise electron beam is shaped and steered onto a resist-coated surface of the reticle.
  • These shapes are simple shapes, usually limited to rectangles of certain minimum and maximum sizes and triangles with their three internal angles being 45 degrees, 45 degrees, and 90 degrees of certain minimum and maximum sizes.
  • doses of electrons are shot into the resist with these simple shapes.
  • the total writing time for this type of system increases with the number of shots.
  • a second type of system is a character projection system.
  • a stencil in the system that has in it a variety of shapes which may be rectilinear, arbitrary-angled linear, circular, annular, part circular, part annular, or arbitrary curvilinear shapes, and may be a connected set of complex shapes or a group of disjointed sets of a connected set of complex shapes.
  • An electron beam can be shot through the stencil to efficiently produce more complex patterns (i.e., characters) on the reticle.
  • complex patterns i.e., characters
  • such a system could be faster than a VSB system because it can shoot more complex shapes with each time-consuming shot.
  • an E shot with a VSB system takes four shots, but could be done with one shot with a character projection system.
  • shaped beam systems can be thought of as a special (simple) case of character projection, where the characters are just simple characters, usually rectangles or 45-45-90 triangles. It is also possible to partially expose a character. This can be done by, for instance, blocking part of the particle beam. For example, the E described above can be partially exposed as an F or an I, where different parts of the beam are cut off by an aperture. For a very complex reticle, one must fracture the pattern into nearly billions and sometimes approaching trillions of elemental shapes. There are, for instance, simple rectangular shapes for a VSB system or a limited number of characters in a character projection system. The more total instances of elemental shapes (characters) in the pattern, the longer and more expensive the write time.
  • a method for manufacturing a surface comprising the steps of writing a surface with a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique.
  • a method for producing a surface comprising the steps of designing a number of patterns to be formed on a surface, the patterns being slightly different, determining a set of characters to be used from the number of patterns, preparing a stencil mask having the set of characters, and reducing shot count or total write time by use of a character varying technique.
  • a system for manufacturing a surface comprising a stencil mask having a set of characters for forming the patterns on the surface and a device for reducing shot count or total write time by use of a character varying technique.
  • a method for optical proximity correction of a design of a pattern on a surface comprising the steps of inputting desired patterns for the substrate and inputting a set of characters some of which are complex characters that may be used for forming the patterns on the surface.
  • a method for optical proximity correction of a design of patterns on a surface comprising the step of inputting possible glyphs, the glyphs being based on predetermined characters, and the glyphs being determined using a calculation of varying a character dose or varying a character position or applying partial exposure of a character.
  • a system for optical proximity correction of a design of a pattern on a surface in which the system comprises desired patterns for the substrate and a set of characters some of which are complex characters for forming some of the patterns on the surface.
  • a method for fracturing or mask data preparation or proximity effect correction comprises the steps of inputting patterns to be formed on a surface, a subset of the patterns being slightly different variations of each other and selecting a set of characters some of which are complex characters to be used to form the number of patterns, and reducing shot count or total write time by use of a character varying technique.
  • a system for fracturing or mask data preparation or proximity effect correction which comprises a device for inputting patterns to be formed on a surface, the patterns being slightly different and a device for selecting a set of characters some of which are complex characters to be used to form the number of patterns, the set of characters fitting on a stencil mask, and reducing shot count and total write time by use of a character varying technique.
  • FIG. 1 is a cell projection system used to manufacture a surface
  • FIG. 2A illustrates a design of a pattern to be placed on a substrate
  • FIG. 2B illustrates a pattern formed in a reticle from the design shown in FIG. 2A;
  • FIG. 2C illustrates a pattern formed in the photoresist of a substrate using the reticle of FIG. 2B, illustrating that without optical proximity correction, the image is not nearly similar to the design shown in FIG. 2A;
  • FIG. 3 A illustrates an optical proximity corrected version of the pattern shown in FIG. 2 A
  • FIG. 3B illustrates an optical proximity corrected version of the pattern shown in FIG. 3A after it is formed in the reticle
  • FIG. 3C illustrates a pattern formed in the photoresist of a silicon wafer using the reticle of FIG. 3B;
  • FIG. 4A illustrates an ideal pattern to be placed on a substrate
  • FIG. 4B illustrates two basic stencil shapes
  • FIG. 4C illustrates the two basic stencil shapes shown in FIG. 4B in an overlapping manner
  • FIG. 4D illustrates a pattern formed on a reticle by use of the overlapping stencil shapes shown in FIG. 4C;
  • FIG. 4E illustrates a pattern formed on a substrate by use of the pattern shown in FIG. 4D;
  • FIG. 5 A illustrates two basic stencil shapes in an overlapping manner where one of the stencil shapes consists of two disjointed squares;
  • FIG. 5B illustrates a pattern formed on a reticle by use of the overlapping stencil shapes shown in FIG. 5A;
  • FIG. 5C illustrates a pattern formed on a substrate by use of the pattern shown in FIG. 5B;
  • FIG. 6A illustrates a stencil shape for forming a pattern on a reticle
  • FIG. 6B illustrates a pattern formed on a reticle by use of the stencil shape shown in FIG. 6A;
  • FIG. 6C illustrates a pattern formed on a substrate by use of the pattern shown in FIG. 6B;
  • FIG. 7A illustrates four stencil shapes used to form a pattern on a surface
  • FIG. 7B illustrates a pattern formed on a surface by use of the stencil shapes shown in FIG. 7A;
  • FIG. 8 A illustrates a set of characters formed on a stencil mask
  • FIG. 8B illustrates a pattern formed on a surface by use of the set of characters shown in FIG. 8A;
  • FIG. 8C illustrates a set of adjustment characters
  • FIG. 8D illustrates, using solid and dotted line shapes, the varying degrees of doses by which each character and adjustment characters are exposed in the resist of a surface by use of the set of characters shown in FIG. 8 A and the adjustment characters shown in FIG. 8C;
  • FIG. 8E illustrates a pattern formed in a surface by use of the set of characters shown in FIG. 8A and the adjustment characters shown in FIG. 8C;
  • FIG. 9 illustrates a conceptual flow diagram of how to prepare a surface for use in fabricating a substrate such as an integrated circuit on a silicon wafer;
  • FIG. 10 illustrates another conceptual flow diagram of how to prepare a surface for use in fabricating a substrate such as an integrated circuit on a silicon wafer;
  • FIG. 11 illustrates a set of characters
  • FIG. 12 illustrates a set of characters and adjustment characters with shape variation
  • FIG. 13 illustrates a set of characters and adjustment characters with positional variation
  • FIG. 14 illustrates a set of patterns created by shape variation of adjustment characters
  • FIG. 15 illustrates a set of patterns created by various dosage amounts of adjustment characters
  • FIG. 16 illustrates a set of patterns created by various dosage amounts of a single character
  • FIG. 17 illustrates a set of patterns created by positional variation of adjustment characters
  • FIG. 18 illustrates a conceptual flow diagram of how to prepare a surface for use in fabricating a substrate such as an integrated circuit on a silicon wafer;
  • FIG. 19 illustrates examples of glyphs
  • FIG. 20 illustrates examples of parameterized glyphs.
  • FIG. 1 number 10 identifies an embodiment of a lithography system, such as a particle beam writer system, in this case an electron beam writer system, that employs character projection to manufacture a surface 12 according to the present disclosure.
  • the electron beam writer system 10 has an electron beam source 14 that projects an electron beam 16 toward an aperture plate 18.
  • the plate 18 has an aperture 20 formed therein which allows the electron beam 16 to pass. Once the electron beam 16 passes through the aperture 20 it is directed or deflected by a system of lenses (not shown) as electron beam 22 toward another rectangular aperture plate or stencil mask 24.
  • the stencil mask 24 has formed therein a number of apertures 26 that define various types of characters 28.
  • Each character 28 formed in the stencil mask 24 may be used to form a pattern in the surface 12.
  • An electron beam 30 emerges from one of the apertures 26 and is directed onto the surface 12 as a pattern 32.
  • the surface 12 is coated with resist (not shown) which reacts with the electron beam 30.
  • the pattern 32 is drawn by using one shot of the electron beam system 10. This reduces the overall writing time to complete the pattern 32 as compared to using a variable shape beam (VSB) projection system or method.
  • the surface 12 may be a reticle.
  • the surface 12 may then be used in another device or machine, such as a scanner, to transfer the pattern 32 onto a silicon wafer to produce an integrated circuit or a chip. More generally, the reticle 12 is used in another device or machine to transfer the pattern 32 on to a substrate.
  • FIG. 2A illustrates an ideal pattern 40, which represents a circuit, to be formed in the resist of a substrate.
  • the reticle is not a perfect representation of the pattern 40.
  • a pattern 42 that may be formed in a reticle that attempts to represent the pattern 40 is shown in FIG. 2B.
  • the pattern 42 has more rounded and shortened features as compared to the pattern 40.
  • a pattern 44 is formed in the photoresist on the substrate as depicted in FIG. 2C.
  • the pattern 44 is not very close to the ideal pattern 40, demonstrating why optical proximity correction is required.
  • FIGS. 3A-3C show how optical proximity correction can be employed to enhance the optical lithography process to develop a better version of the pattern 44.
  • FIG. 3 A illustrates a pattern 50 that is an altered version of the pattern 40.
  • the pattern 50 has a serif element 52 added to various corners of the pattern 50 to provide extra area in an attempt to reduce optical and processing effects that reduce the sharpness of the corner.
  • a reticle of the pattern 50 When a reticle of the pattern 50 is produced it may appear in the reticle as a pattern 54 as shown in FIG. 3B.
  • the optical proximity corrected pattern 54 When the optical proximity corrected pattern 54 is used in an optical lithography device an output pattern 56, as depicted in FIG. 3C, is produced.
  • the pattern 56 more resembles the ideal pattern 40 than the pattern 44 and this is due to optical proximity correction.
  • optical proximity correction may require that every pattern be altered or decorated which increases the time and cost to produce a reticle or photomask.
  • the various patterns formed on the reticle may properly have slight differences between them when OPC is applied and this adds to the time and expense in preparing a reticle. Further, the large number of slight differences or variations in the patterns may make producing a reticle unmanageable using character projection systems because the number of required characters would be too large.
  • FIG. 4A an ideal pattern 60, such as a contact, that is to be placed on a substrate is shown.
  • the ideal pattern 60 is in the shape of a square.
  • FIG. 4B shows two basic stencil shapes or characters 62 and 64 that can be used to write the ideal pattern 60 onto a reticle.
  • the stencil shape 62 is a square shape 66 having a serif 68 positioned at each corner 70, 72, 74, and 76.
  • the stencil shape 64 is an adjustment character that may be repositioned on the shape 62 to change or alter the shape of the serif 68 at one or more of the corners 70, 72, 74, and 76.
  • FIG. 4C the stencil shape 64 is shown overlapping the corner 74 of the stencil shape 62.
  • a pattern 78 as shown in FIG. 4D will appear.
  • the pattern 78 has a corner 80 that is more elongated or pronounced that any of the other corners. This is due to the use of the stencil shape 64 to alter the corner 74.
  • the pattern 78 which is on a photomask or a reticle, may be used in a conventional lithographic device to transfer the pattern 78 onto a substrate.
  • a pattern 82 as depicted in FIG. 4E, would be the result of the pattern 78 being transferred onto a substrate.
  • the pattern 82 is similar to or an approximation of the ideal pattern 60.
  • Various other patterns may be formed with the use of the stencil shapes 62 and 64.
  • two instances of the shape 64 can be combined together as one character 90 used to overlap the corners 70 and 74 to form a pattern 92, which is shown in FIG. 5A.
  • Stencil shapes 90 and 92 are overlapping shots that may produce pattern 94 in FIG. 5B on the reticle.
  • a pattern 96 as is shown in FIG. 5C appears on the substrate when the pattern 94 on a reticle is used to project the substrate.
  • the pattern 96 is substantially the same as the ideal pattern 60.
  • a set of sixteen characters, 400, 402, 404, 406, 408, 410, 412, 414, 416, 418, 420, 422, 424, 426, 428, and 430 are shown as the characters would appear on a surface after being projected by a character projection system.
  • the "0 ear" pattern on the surface, as shown by the character 400 was projected by a character whose design is shown in FIG. 13 as "center CP" 450 to project a pattern on a design that is a square as shown in FIG. 13 as "square” 452.
  • the "2 ears” pattern, as shown by the character 414, is projected by a character whose design is shown in FIG.
  • the fifteen characters 402, 404, 406, 408, 410, 412, 414, 416, 418, 420, 422, 424, 426, 428, and 430 projected in combination with character 400 may create fifteen patterns 472, 474, 476, 478, 480, 482, 484, 486, 488, 490, 492, 494, 496, 498, and 500, as depicted in FIG. 14 on a surface.
  • a pattern 470 (FIG. 14) is created by projecting character 400 along with a certain dose.
  • the fifteen patterns 472, 474, 476, 478, 480, 482, 484, 486, 488, 490, 492, 494, 496, 498, and 500 of FIG. 14 are glyphs formed by a combination of two character shots that are examples of a large variation of slightly different patterns that may be generated on the surface from a small set of characters.
  • a potential reason for the need for the large variation is optical proximity correction for the eventual projection using optical lithography in the case where the surface is a reticle or a photomask.
  • a large variation of slightly different patterns that are variations of the "O ear" 400 (FIG. 12) need to be generated on the reticle.
  • the present disclosure however is independent of the reason to need the large variation of slightly different patterns.
  • FIG. 15 represents the cases 530, 532, 534, 536, and 538 of the dose being varied by 0%, -30%, -60%, +50%, and +100% generating critical dimension variations from IOnm to 19nm.
  • the dose of the center character represented by "0 ear" 400 can also be varied to create further variation of slightly different patterns.
  • FIG. 16 represents the different shapes 550, 552, 554, 556, and 558 that can be generated on the surface by varying the dose by -40%, -20%, 0%, +25%, and +50%.
  • a shape 560 illustrates the overlapping of the shapes 550, 552, 554, 556, and 558 to further demonstrate that slightly different patterns can be generated by varying the dose.
  • Each of the patterns 550, 552, 554, 556, and 558 may be glyphs, or patterns that are known to be available by combining a small number of character shots.
  • a parameterized glyph may be used as a more compact representation with more generality to describe a number of glyphs in a single description.
  • a pattern 560 demonstrates that a dose amount may be a parameter to represent multiple glyphs with one representation.
  • a parameterized glyph that is a single description describing all of these possible glyphs 550, 552, 554, 556, and 558 is a more compact and a more flexible representation.
  • a pattern 580 and a pattern 582 are composed by placing the same 1 ear character, such as the character 404 shown in FIG. 12, at different locations to the 0 ear character, such as the character 400 in FIG. 12.
  • a very large number of slightly different patterns can be projected on the surface while using only two shots. With three or more shots, the number of available glyph patterns that can be projected on the surface increases geometrically.
  • Other patterns, such as patterns 584, 586, 588, and 590 are also shown in FIG. 17.
  • the pattern 584 is formed by combining character 400 (FIG. 12) with the character for standard distance for 2 ears using an adjustment character 412 shown in FIG. 12.
  • the pattern 586 is formed by combining character 400 with the character for a long distance for 2 ears using the adjustment character 432 of FIG. 12.
  • the pattern 588 is formed by combining character 400 of FIG. 12 with the character for a standard distance for 3 ears using the adjustment character 424 of FIG. 12.
  • the pattern 590 is formed by combining character 400 of FIG. 12 with the character for a long distance for 3 ears using an adjustment character 434 shown in FIG. 12.
  • FIG. 6A another stencil pattern 100 is shown that can be used in an attempt to form a pattern on a substrate, such as a silicon wafer, to resemble the ideal pattern 60 as shown in FIG. 4A.
  • the stencil pattern 100 includes a stencil shape 102 having a serif 104 at each corner 106, 108, 110, and 112.
  • the stencil pattern 100 also has a sub-resolution assist feature (SRAF) 114 positioned at a diagonal at each of the corners 106, 108, 110, and 112.
  • SRAF sub-resolution assist feature
  • the stencil pattern 100 is used to form a pattern 116 on a reticle, as is shown in FIG. 6B.
  • FIG. 6C the pattern 116 is then used to form a pattern 118 on a substrate.
  • the pattern 118 is similar to the ideal pattern 60.
  • FIG. 7A illustrates four stencil characters 150, 152, 154, and 156 that may be used on a stencil mask to be combined to form a sophisticated shape or pattern 158 on a reticle as shown in FIG. 7B.
  • the first character 150 is shot or projected onto the reticle, then the second character 152 is shot, then the third character 154, and finally the fourth character 156.
  • the characters are curvilinear in shape and not rectilinear in shape.
  • a complex pattern, such as the pattern 158 may be formed on a reticle.
  • the shapes on the stencil mask may be termed "characters" and the pattern formed on the reticle may be termed a "glyph”.
  • a combination of multiple characters may be overlapped with each other with different dose variations to increase the variation of possible shapes or patterns that may be generated.
  • the position of a character may be changed to increase the variation of possible shapes or patterns that may be generated. Since the shapes of the characters 150, 152, 154, and 156 are curvilinear this reduces the number of shots that must be used by a particle beam writer system to shoot or project the characters 150, 152, 154, and 156 onto a reticle to write a glyph pattern, such as the pattern 158.
  • the pattern 158 can be shot by using only the four characters 150, 152, 154, and 156. While if rectilinear shapes were used many more shots or VSB shots would have to be used. As can be seen, being able to use characters instead of VSB shots reduces the time in preparing a reticle. It is also possible to use rectilinear shapes with curvilinear shapes to form a pattern on a reticle. While this feature of character projection is available in character projection systems for projecting surfaces that require a very large variety of shapes, the number of characters that can be made available as single components are not large enough. The present method and system combines multiple characters with dose, position, or partial projection variations with potentially overlapping shots to increase the number of glyph patterns available dramatically.
  • FIG. 8A an example of a set of characters 200 that may be placed on a stencil mask is shown.
  • the set of characters 200 may be used to form a pattern 202 on a reticle, as is illustrated in FIG. 8B.
  • the pattern 202 may be formed from one or more of the characters in the set of characters 200.
  • adjustment characters or shots 204 as seen in FIG. 8C, may be used to further enhance the pattern 202.
  • FIG. 8D depicts an example of the pattern 202 in combination with the adjustment characters 204 that may be formed in the resist of a reticle.
  • FIG. 8E shows a pattern 206 that is formed in a reticle by use of the set of characters 200 and the adjustment characters 204 with varying doses.
  • a limited number of characters, such as the set of characters 200, may be used to form a plurality of different shaped patterns or a plurality of slightly different shaped patterns.
  • FIG. 9 is a conceptual flow diagram 250 of how to prepare a reticle for use in fabricating a surface such as an integrated circuit on a silicon wafer.
  • a physical design such as a physical design of an integrated circuit is designed.
  • optical proximity correction is determined.
  • this can include taking as input a library of pre-calculated glyphs or parameterized glyphs.
  • This can also alternatively, or in addition, include taking as input a library of pre-designed characters including complex characters that are to be available on a stencil 260 in a step 262.
  • an OPC step 254 may also include simultaneous optimization of shot count or write times, and may also include a fracturing operation, a shot placement operation, a dose assignment operation, or may also include a shot sequence optimization operation, or other mask data preparation operations.
  • a mask design is developed in a step 256. Then, in a step 258, a mask data preparation operation which may include a fracturing operation, a shot placement operation, a dose assignment operation, or a shot sequence optimization may take place.
  • Either of the steps of the OPC step 254 or of the MDP step 258, or a separate program independent of these two steps 254 or 258 can include a program for determining a limited number of stencil characters that need to be present on a stencil or a large number of glyphs or parameterized glyphs that can be shot on the surface with a small number of shots by combining characters that need to be present on a stencil with varying dose, position, and degree of partial exposure to write all or a large part of the required patterns on a reticle.
  • the mask data preparation step 258 or mask data preparation does not include OPC. Combining OPC and any or all of the various operations of mask data preparation in one step is contemplated in this disclosure.
  • Mask data preparation step 258 which may include a fracturing operation may also comprise a pattern matching operation to match glyphs to create a mask that matches closely to the mask design.
  • Mask data preparation may also comprise inputting patterns to be formed on a surface with the patterns being slightly different, selecting a set of characters to be used to form the number of patterns, the set of characters fitting on a stencil mask, and the set of characters based on varying character dose or varying character position or applying partial exposure of a character within the set of characters to reduce the shot count or total write time.
  • a set of slightly different patterns on the surface may be designed to produce substantially the same pattern on a substrate.
  • the set of characters may be selected from a predetermined set of characters.
  • a set of characters available on a stencil in a step 270 that may be selected quickly during the mask writing step 262 may be prepared for a specific mask design.
  • a stencil is prepared in a step 260.
  • a stencil is prepared in the step 260 prior to or simultaneous with the MDP step 258 and may be independent of the particular mask design.
  • the characters available in the step 270 and the stencil layout are designed in step 272 to output generically for many potential mask designs 256 to incorporate slightly different patterns that are likely to be output by a particular OPC program 254 or a particular MDP program 258 or particular types of designs that characterizes the physical design 252 such as memories, flash memories, system on chip designs, or particular process technology being designed to in physical design 252, or a particular cell library used in physical design 252, or any other common characteristics that may form different sets of slightly different patterns in mask design 256.
  • the stencil can include a set of characters, such as a limited number of characters that was determined in the step 258, including a set of adjustment characters.
  • the stencil is used to generate a surface in a mask writer machine, such as an electron beam writer system.
  • a mask writer machine such as an electron beam writer system.
  • This particular step is identified as a step 262.
  • the electron beam writer system projects a beam of electrons through the stencil onto a surface to form patterns in a surface, as shown in a step 264.
  • the completed surface may then be used in an optical lithography machine, which is shown in a step 266.
  • a substrate such as a silicon wafer is produced.
  • characters may be provided to the OPC step 254 or the MDP step 258.
  • the step 270 also provides characters to a character and stencil design step 272 or a glyph generation step 274.
  • the character and stencil design step 272 provides input to the stencil step 260 and to the characters step 270.
  • the glyph generation step 274 provides information to a glyphs or parameterized glyphs step 276. Also, as has been discussed, the glyphs or parameterized glyphs step 276 provides information to the OPC step 254 or the MDP step 258.
  • a physical design such as a physical design of an integrated circuit is designed. This may be the ideal pattern that the designer wants transferred onto a substrate.
  • optical proximity correction of the ideal pattern generated in the step 302 is determined. This can include selecting glyphs that need to be prepared. Optical proximity correction may also comprise inputting possible glyphs, the glyphs being based on predetermined characters, and the glyphs being determined using a calculation of varying a character dose or varying a character position or applying partial exposure of a character.
  • optical proximity correction may comprise selecting a glyph from the possible glyphs, computing the patterns on the substrate based on the selected glyph, and selecting another glyph if an error from the computation exceeds a predetermined threshold.
  • the predetermined characters may be from a list of geometric patterns.
  • Mask data preparation may also comprise pattern matching to match glyphs to create a mask that matches closely to the mask design. Iterations, potentially including only one iteration where a correct-by-construction "deterministic" calculation is performed, of pattern matching, dose assignment, and equivalence checking may also be performed. These steps will assist in preparing an enhanced equivalent mask design. Once the mask is enhanced an equivalent mask design is generated in a step 310. There are two motivations for tests that can be used to determine whether the equivalent mask design is really equivalent to the mask design. One motivation is to pass mask inspection. Another motivation is to confirm that the chip or integrated circuit will function properly once it has been fabricated. The closeness to which a pattern matching operation declares a match may be determined by a set of equivalence criteria.
  • An equivalence criteria may be driven at least partially by litho-equivalence.
  • Litho-equivalence may be determined by a set of predetermined geometric rules, a set of mathematical equations that declare a match, a partial match, or a no match, or by running a lithography simulation of the pattern on the surface design and a lithography simulation of a glyph and by comparing the two results using a set of predetermined geometric rules, or by a set of mathematical equations that declare a match, a partial match, or no match.
  • the MDP step 308 may use a predetermined set of available characters, glyphs, or parameterized glyphs to optimize for shot count or write time while insuring that a resulting equivalent mask design 310 is acceptable to the equivalence criteria.
  • OPC and MDP may be combined in a correct by construction method, in which case there may not be the mask design 306 generated separately from the equivalent mask design 310.
  • the equivalent mask design may be used to prepare a stencil as is shown in a step 312. Once the stencil is completed the stencil is used to prepare a reticle in a mask writer machine, such as an electron beam writer system. This step is identified as a step 314.
  • the electron beam writer system projects a beam of electrons through the stencil onto a surface to form patterns in a surface.
  • a substrate such as a semiconductor wafer is produced.
  • characters may be provided to the OPC step 304 or the MDP step 308.
  • the step 322 also provides characters to a glyph generation step 326.
  • the character and stencil design step 324 provides input to the stencil step 312 or to a character step 322.
  • the character step 322 may provide input to the character and stencil design step 324.
  • the glyph generation step 326 provides information to a glyphs or parameterized glyphs step 328. Also, as has been discussed, the glyphs or parameterized glyphs step 328 provides information to either the OPC step 308 or the MDP step 308.
  • a physical design such as a physical design of an integrated circuit is designed. This may be an ideal pattern that the designer wants transferred onto a substrate.
  • PEC proximity effect correction
  • DP data preparation
  • the step 704 may also comprise inputting possible glyphs or parameterized glyphs from step 724, the glyphs being based on predetermined characters from step 718, and the glyphs being determined using a calculation of varying a character dose or varying a character position or applying partial exposure of a character in glyph generation step 722.
  • the step 704 may also comprise pattern matching to match glyphs to create a wafer image that matches closely to the physical design created in the step 702. Iterations, potentially including only one iteration where a correct-by-construction "deterministic" calculation is performed, of pattern matching, dose assignment, and equivalence checking may also be performed.
  • a stencil is prepared in a step 708 and is then provided to a wafer writer in a step 710.
  • the stencil is used to prepare a wafer in a wafer writer machine, such as an electron beam writer system.
  • This step is identified as the step 710.
  • the electron beam writer system projects a beam of electrons through the stencil onto a surface to form patterns in a surface.
  • the surface is completed in a step 712.
  • characters may be provided to the PEC and Data Prep step 704.
  • the step 718 also provides characters to a glyph generation step 722.
  • the character and stencil design step 720 provides input to the stencil step 708 or to a character step 718.
  • the character step 718 may provide input to the character and stencil design step 720.
  • the glyph generation step 722 provides information to a glyphs or parameterized glyphs step 724.
  • the glyphs or parameterized glyphs step 724 provides information to the PEC and Data Prep step 704.
  • the step 710 may include repeated application as required for each layer of processing, potentially with some processed using the methods described in association with FIGS. 9 and 10, and others processed using the methods outlined above with respect to FIG. 18, or others produced using any other wafer writing method to produce integrated circuits on the silicon wafer.
  • FIG 11 shows various other basic template shapes or characters 350, 352, 354, 356, 358, 360, and 362 that can be used as a set of characters on a stencil to form various patterns on a reticle.
  • the stencil characters can be modified slightly by three methods when using character projection. The first way is to modify the shape and the size of the character. For example, variable character projection may be used where a single character can be varied by partially exposing a portion of the character. The second way is to modify the dose amount slightly when shooting a given shape and size of a character.
  • a "dose" of a particle projection shot is the shutter speed, the length of time for which a given shot is being projected on the surface of a reticle.
  • Dose correction is a process step in which the dose amount for any given character projection shot is modified slightly, for example, for proximity effect correction (PEC).
  • the dose is altered purposefully to slightly modify the size and shape of the characters projected onto the surface of a reticle to form patterns or glyphs on the reticle. It is also possible to modify the patterns shot onto a reticle by using multiple overlapping shots of the characters 350, 352, 354, and 356, to produce a large variety of patterns or glyphs.
  • the patterns or glyphs may be rectilinear, near-rectilinear, linear, or curvilinear in shape.
  • a set of stencil characters may be used with VSB shots, which are an example of a simple character, to form even more patterns or glyphs on a surface.
  • VSB shots and characters may be combined with assigned dose amounts to generate a large variety of patterns or glyphs.
  • the third method to modify the stencil characters slightly is with positional variation.
  • the characters 358, 360, and 362 show three variations of positions of the same character.
  • a set of character projection characters are designed and are included in the stencil installed in a particle beam projection system that writes a reticle.
  • An optical proximity correction system may be used to select a combination of character projection characters including potentially VSB shots with potential varying dose amounts and degrees of partial projection to generate a large number of patterns.
  • a set of characters can be predesigned either specifically for a particular design or more generally for a set of designs and potential future designs with certain commonalties such as a particular semiconductor fabrication technology node.
  • the optical proximity correction system may fracture overlapping characters each with variable dose amounts. This allows for complex shapes to be created on the reticle.
  • the optical proximity correction system can start with a large library of pre-computed or pre-calculated glyphs. The optical proximity correction system can then attempt to use the available glyphs as much as possible in performing optical proximity correction transformation of the original physical design of the integrated circuit to the reticle design. Glyphs may be each marked with an associated shot count and write time optimization value or values and an optical proximity correction system, a mask data preparation system, or some independent program may optimize for shot count or write time by selecting the lower shot count or write time.
  • This optimization may be performed in a greedy manner where each glyph is chosen to optimize what is the best glyph to choose for shot count or write time with a certain order in which to choose glyphs to match a pattern, or in an iterative optimization manner such as with simulated annealing where exchanges of glyph selection optimizes the overall shot count or write time. It is possible that some desired patterns to be formed on a reticle may still remain unmatched by any available glyphs and such patterns may need to be formed by use of VSB shots.
  • glyphs 1000, 1002, 1004, and 1006 that may be used by optical proximity correction, fracturing, proximity effect correction, or any other steps of mask data preparation are shown.
  • These glyphs 1000, 1002, 1004, and 1006 may or may not be generated by a combination of the same characters or they may also be glyphs generated from four different characters. Regardless of the method of creating the glyphs, the glyphs represent possible patterns that are known to be possible patterns on the surface that can be generated with a small number of shots or write times.
  • Each glyph may have associated with it the specification for characters required to generate the glyph, the partial exposure instructions for each of the characters, projected required dose of each character, and relative positions of the characters.
  • FIG. 20 shows examples of parameterized glyphs 1010 and 1012.
  • the glyph 1010 demonstrates a general shape described with a specification of a dimension that can be varied, in this case the length X being varied from length unit values between 10 and 25.
  • the glyph 1012 demonstrates the same general shape in a more restrictive way where the length X can only be one of the specific values, for example, 10, 15, 20, or 25.
  • the parameterized glyph 1010 demonstrates that these descriptions allow for a large variety of possible glyphs that is not practical with the enumeration method of glyphs that are not parameterized.

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Abstract

La présente invention concerne un procédé et un système permettant de fabriquer une surface comportant une diversité de motifs légèrement différents. Le procédé comprend l’utilisation d’un masque pochoir comportant un jeu de caractères pour former les motifs sur la surface et la réduction du nombre de passages ou du temps total d’écriture par l’utilisation d’une technique à variation de caractères. L’application d’un tel procédé à un fractionnement, une préparation de données de masque ou une correction d’effet de proximité est également décrite. L’invention concerne également un procédé pour une correction de proximité optique d’un concept d’un motif sur une surface, comprenant l’entrée de motifs souhaités pour le substrat et l’entrée d’un jeu de caractères, dont certains sont des caractères complexes, pouvant être utilisés pour former le motif sur la surface. Elle concerne également la création de glyphes.
PCT/US2009/053327 2008-09-01 2009-08-10 Procédé pour correction de proximité optique, concept et fabrication d’un réticule à l’aide de la lithographie par projection de caractères WO2010025031A2 (fr)

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EP09810440A EP2321701A2 (fr) 2008-09-01 2009-08-10 Procede pour correction de proximite optique, concept et fabrication d' un reticule a l' aide de la lithographie par projection de caracteres
JP2011525072A JP5676449B2 (ja) 2008-09-01 2009-08-10 光近接効果補正、設計およびキャラクタプロジェクションリソグラフィを用いたレチクルの製造のための方法
CN2009801342427A CN102138106A (zh) 2008-09-01 2009-08-10 用于光学邻近校正的方法、使用字符投影光刻的光罩的设计和制造

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US12/202,366 US7759027B2 (en) 2008-09-01 2008-09-01 Method and system for design of a reticle to be manufactured using character projection lithography
US12/202,365 2008-09-01
US12/202,366 2008-09-01
US12/202,364 US7759026B2 (en) 2008-09-01 2008-09-01 Method and system for manufacturing a reticle using character projection particle beam lithography
US12/202,365 US7901845B2 (en) 2008-09-01 2008-09-01 Method for optical proximity correction of a reticle to be manufactured using character projection lithography
US12/202,364 2008-09-01
US12/269,777 US7745078B2 (en) 2008-09-01 2008-11-12 Method and system for manufacturing a reticle using character projection lithography
US12/269,777 2008-11-12

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2302659A3 (fr) * 2009-08-26 2011-05-25 D2S, Inc. Procédé de fractionnement et de formation d'un motif utilisant des caractères curvilinéaires avec la lithographie par faisceau de particules chargées
US7985514B2 (en) 2009-10-21 2011-07-26 D2S, Inc. Method for fracturing a pattern for writing with a shaped charged particle beam writing system using dragged shots
WO2013043406A1 (fr) * 2011-09-19 2013-03-28 D2S, Inc. Procédé et système d'optimisation d'une image sur un substrat à fabriquer à l'aide de lithographie optique
US8431914B2 (en) 2009-08-26 2013-04-30 D2S, Inc. Method and system for manufacturing a surface using charged particle beam lithography with variable beam blur
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US8669023B2 (en) 2008-09-01 2014-03-11 D2S, Inc. Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
US8703389B2 (en) 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US8719739B2 (en) 2011-09-19 2014-05-06 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9038003B2 (en) 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
EP2321840A4 (fr) * 2008-09-01 2015-12-16 D2S Inc Procede pour correction de proximite optique, concept et fabrication d' un reticule a l' aide d' une lithographie a faisceau de forme variable
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US9372391B2 (en) 2008-09-01 2016-06-21 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9354502B2 (en) 2012-01-12 2016-05-31 Asml Netherlands B.V. Lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method for providing setpoint data and a computer program
CN108268688B (zh) * 2017-01-04 2021-11-02 复旦大学 一种基于字符投影电子束光刻技术的字符盘优化设计方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070196768A1 (en) * 2006-02-22 2007-08-23 Fujitsu Limited Charged particle beam projection method and program used therefor
US20080116397A1 (en) * 2006-11-21 2008-05-22 Cadence Design Systems, Inc. Stencil design and method for cell projection particle beam lithography
US20080116399A1 (en) * 2006-11-21 2008-05-22 Cadence Design Systems, Inc. Method and system for improving particle beam lithography
US20080128637A1 (en) * 2006-12-01 2008-06-05 Cadence Design Systems, Inc. Method and system for logic design for cell projection particle beam lithography

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05114549A (ja) * 1991-10-23 1993-05-07 Matsushita Electric Ind Co Ltd 電子ビーム露光方法
JPH06252036A (ja) * 1993-02-24 1994-09-09 Hitachi Ltd 露光方法それに用いるパターンデータの作成方法および露光装置
JP2002075830A (ja) * 2000-08-29 2002-03-15 Nikon Corp 荷電粒子線露光方法、レチクル及びデバイス製造方法
US7902528B2 (en) * 2006-11-21 2011-03-08 Cadence Design Systems, Inc. Method and system for proximity effect and dose correction for a particle beam writing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070196768A1 (en) * 2006-02-22 2007-08-23 Fujitsu Limited Charged particle beam projection method and program used therefor
US20080116397A1 (en) * 2006-11-21 2008-05-22 Cadence Design Systems, Inc. Stencil design and method for cell projection particle beam lithography
US20080116399A1 (en) * 2006-11-21 2008-05-22 Cadence Design Systems, Inc. Method and system for improving particle beam lithography
US20080128637A1 (en) * 2006-12-01 2008-06-05 Cadence Design Systems, Inc. Method and system for logic design for cell projection particle beam lithography

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9625809B2 (en) 2008-09-01 2017-04-18 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9043734B2 (en) 2008-09-01 2015-05-26 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US10101648B2 (en) 2008-09-01 2018-10-16 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8669023B2 (en) 2008-09-01 2014-03-11 D2S, Inc. Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
US9715169B2 (en) 2008-09-01 2017-07-25 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
EP2321840A4 (fr) * 2008-09-01 2015-12-16 D2S Inc Procede pour correction de proximite optique, concept et fabrication d' un reticule a l' aide d' une lithographie a faisceau de forme variable
US9372391B2 (en) 2008-09-01 2016-06-21 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
US8431914B2 (en) 2009-08-26 2013-04-30 D2S, Inc. Method and system for manufacturing a surface using charged particle beam lithography with variable beam blur
US8916315B2 (en) 2009-08-26 2014-12-23 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
EP2302659A3 (fr) * 2009-08-26 2011-05-25 D2S, Inc. Procédé de fractionnement et de formation d'un motif utilisant des caractères curvilinéaires avec la lithographie par faisceau de particules chargées
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
US7985514B2 (en) 2009-10-21 2011-07-26 D2S, Inc. Method for fracturing a pattern for writing with a shaped charged particle beam writing system using dragged shots
US8637211B2 (en) 2010-10-13 2014-01-28 D2S, Inc. Method for integrated circuit manufacturing and mask data preparation using curvilinear patterns
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
US8612901B2 (en) 2010-10-13 2013-12-17 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with multiple exposure passes
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
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US8703389B2 (en) 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9400857B2 (en) 2011-09-19 2016-07-26 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US8719739B2 (en) 2011-09-19 2014-05-06 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
US10031413B2 (en) 2011-09-19 2018-07-24 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
WO2013043406A1 (fr) * 2011-09-19 2013-03-28 D2S, Inc. Procédé et système d'optimisation d'une image sur un substrat à fabriquer à l'aide de lithographie optique
US9038003B2 (en) 2012-04-18 2015-05-19 D2S, Inc. Method and system for critical dimension uniformity using charged particle beam lithography
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US9859100B2 (en) 2012-04-18 2018-01-02 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
US10431422B2 (en) 2012-04-18 2019-10-01 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography

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