WO2010018767A1 - Semiconductor processing method and adhesive tape - Google Patents

Semiconductor processing method and adhesive tape Download PDF

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Publication number
WO2010018767A1
WO2010018767A1 PCT/JP2009/063806 JP2009063806W WO2010018767A1 WO 2010018767 A1 WO2010018767 A1 WO 2010018767A1 JP 2009063806 W JP2009063806 W JP 2009063806W WO 2010018767 A1 WO2010018767 A1 WO 2010018767A1
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WO
WIPO (PCT)
Prior art keywords
adhesive tape
semiconductor wafer
semiconductor
processing method
adhesive
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PCT/JP2009/063806
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French (fr)
Japanese (ja)
Inventor
太郎 稲田
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電気化学工業株式会社
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Publication date
Priority claimed from JP2008206676A external-priority patent/JP2011222541A/en
Priority claimed from JP2009004347A external-priority patent/JP2011219503A/en
Application filed by 電気化学工業株式会社 filed Critical 電気化学工業株式会社
Publication of WO2010018767A1 publication Critical patent/WO2010018767A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Definitions

  • the present invention relates to a semiconductor processing method including covering an outer peripheral edge of a semiconductor wafer with an adhesive tape and then removing the same during processing, and an adhesive tape used in the semiconductor processing method.
  • the present invention has been made in view of the above circumstances, and even when the outer peripheral edge of the semiconductor wafer is contaminated by processing, the contamination can be removed without cleaning, and the outer peripheral edge of the semiconductor wafer is corroded.
  • Another object of the present invention is to provide a semiconductor processing method that can be protected from impacts from the outside and can be coated by electroless nickel plating, and an adhesive tape for use in this method.
  • the present inventors have intensively studied to solve the above technical problem. As a result, by protecting the outer peripheral edge of the semiconductor wafer with an adhesive tape before processing the semiconductor wafer, the outer peripheral edge of the semiconductor wafer can be easily protected from contamination, impact, etc., and cleaning associated with peeling is required. It has been found that the semiconductor wafer thin film forming process and pattern processing can be performed efficiently without the need for the process. Also, after processing the semiconductor wafer, affixing an adhesive tape to the outer peripheral edge of the semiconductor wafer, and then peeling the adhesive tape from the semiconductor wafer, such as a resist formed on the outer peripheral edge by processing. It has been found that even contamination can be removed from the semiconductor wafer at the same time.
  • the present inventors have found that in order to perform sufficient electroless nickel plating on a semiconductor wafer, it is necessary to form an insulating portion on the semiconductor wafer as shown in the following examples.
  • the adhesive tape forms an insulating portion on the semiconductor wafer by protecting the outer peripheral edge of the semiconductor wafer with the adhesive tape having electrical insulation, the electroless nickel plating is applied to the main surface of the semiconductor wafer. It is particularly suitable for processing.
  • the present invention relates to a semiconductor processing method including a step of attaching an adhesive tape to an outer peripheral edge of a semiconductor wafer and a step of removing the adhesive tape from the semiconductor wafer when processing a semiconductor wafer. .
  • the present inventors can particularly prevent water from entering between the semiconductor wafer and the adhesive tape when the adhesive of the adhesive tape has an acrylic component and a silicone component, and from the semiconductor wafer during processing. It was found that the adhesive tape is difficult to fall off. For this reason, such an adhesive tape can be applied particularly stably in electroless nickel plating that requires a semiconductor wafer to be immersed in a liquid and that requires an insulating portion during processing.
  • the present invention is an adhesive tape used in a semiconductor processing method including a step of attaching an adhesive tape to an outer peripheral edge of a semiconductor wafer and a step of removing the adhesive tape, wherein the adhesive of the adhesive tape is
  • the present invention relates to an adhesive tape having an acrylic component and a silicone component.
  • an adhesive tape As for an adhesive tape, the structure by which the adhesive layer was provided in the single side
  • the width of the adhesive tape is preferably between 2 mm and 10 mm. When the width of the adhesive tape is small, the tape is easily detached from the outer peripheral edge of the semiconductor wafer. If the width of the adhesive tape is large, it becomes difficult to attach the adhesive tape to the outer peripheral edge of the semiconductor wafer without any gap.
  • the resin material constituting the base film is preferably polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate or a copolymer containing these.
  • the thickness of the base film is preferably between 5 ⁇ m and 150 ⁇ m. If the thickness of the base film is thin, when the adhesive tape is peeled off from the semiconductor wafer, the adhesive tape may break and remain on the outer peripheral edge of the semiconductor wafer. Moreover, when the thickness of the base film is thick, it becomes difficult to attach the adhesive tape to the outer peripheral edge of the semiconductor wafer without a gap.
  • the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape preferably contains both an acrylic component and a silicone component, and further contains a component in which both the acrylic component and the silicone component are combined. If an adhesive mainly composed of silicone is used, the siloxane component may become a contamination source of the semiconductor wafer. In addition, when an adhesive mainly composed of acrylic is used, when the adhesive tape comes into contact with water during the processing or cleaning of the main surface of the semiconductor wafer, the water enters between the semiconductor wafer and the adhesive tape. There is a possibility that the adhesive tape may fall off the semiconductor wafer.
  • the adhesive contains both an acrylic component and a silicone component, and further contains a combined component of both the acrylic component and the silicone component, thereby preventing contamination of the semiconductor wafer by the adhesive and at the same time making contact with water. It is possible to suppress detachment of the adhesive tape due to.
  • the water mentioned here includes an aqueous solution containing an acid, an alkali, or an ion, particularly a plating solution used for electroless nickel plating.
  • the pressure-sensitive adhesive containing the acrylic component and the silicone component can be produced by blending the silicone component with the acrylic pressure-sensitive adhesive.
  • a preferable blending ratio is a range in which the silicone component is 0.5 to 5 parts by mass with respect to 100 parts by mass of the acrylic pressure-sensitive adhesive.
  • skeleton can be mentioned, for example.
  • a silicone component the polymer which contains silicone in (meth) acrylic acid ester frame
  • skeleton can be mentioned, for example.
  • it is preferable to add such a silicone component to the acrylic pressure-sensitive adhesive it is more preferable to use a component obtained by combining a silicone component and an acrylic component. This is because when the silicone component is bonded to an acrylic component such as an acrylate ester, the bonding force as an adhesive is strengthened. More specifically, for example, a silicone component having a hydroxyl group bonded to an acrylate copolymer via an isocyanate curing agent can be exemplified.
  • the pressure-sensitive adhesive may contain a tackifier for adjusting the adhesive strength.
  • the pressure-sensitive adhesive may be either a general pressure-sensitive type or an ultraviolet peeling type in which the adhesive strength is reduced by ultraviolet curing. If the peeling force is too high, it is difficult to peel and remove the adhesive tape from the outer peripheral edge of the semiconductor wafer, and breakage of the adhesive tape, residual adhesive or damage to the semiconductor wafer is likely to occur.
  • the thickness of the pressure-sensitive adhesive layer is preferably between 0.1 ⁇ m and 60 ⁇ m. If the pressure-sensitive adhesive layer is thin, the pressure-sensitive adhesive tape may fall off from the outer peripheral edge of the semiconductor wafer during the application of the pressure-sensitive adhesive tape or the processing of the semiconductor wafer. On the other hand, when the pressure-sensitive adhesive layer is thick, it becomes difficult to peel and remove the pressure-sensitive adhesive tape.
  • the pressure-sensitive adhesive layer can be formed by directly applying a pressure-sensitive adhesive on the base film.
  • the means for applying the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer to the base film is not particularly limited.
  • the base film-like film is formed after applying a solution of the pressure-sensitive adhesive to one side of the release film and drying it. There is a method to transfer to. In any method, it is desirable that the pressure-sensitive adhesive layer side surface of the pressure-sensitive adhesive tape is protected with a peelable film until use.
  • stacked with the peelable film can also be utilized for an adhesive layer.
  • the pressure-sensitive adhesive tape in which the pressure-sensitive adhesive layer is protected by the peelable film by removing one of the peelable films on the front surface or the back surface to expose the pressure-sensitive adhesive and pasting the exposed surface on the base film. Can be obtained.
  • one of the peelable films on the front or back surface is removed to expose the adhesive, and after being attached to the wafer, the remaining peelable film is peeled off and the wafer is processed with the adhesive layer exposed. It is also possible to peel the adhesive tape and the adhesive layer by bringing the adhesive tape into contact with the adhesive layer.
  • ⁇ Semiconductor processing method> One mode of a method for processing a semiconductor wafer using the above adhesive tape will be described with reference to FIG.
  • the outer peripheral edge 3 of the semiconductor wafer 1 is covered with the adhesive tape 4.
  • the adhesive tape 4 is wound around the outer periphery of the semiconductor wafer 1 from the winding start position 5 over one turn and covered so as to reach the winding end position 6.
  • the outer peripheral edge 3 of the semiconductor wafer 1 can be covered without interruption, and the resistance against external impact can be improved uniformly. Further, the outer peripheral edge 3 of the semiconductor wafer 1 can be reliably protected from contamination over the entire periphery.
  • the adhesive tape 4 wound around the semiconductor wafer 1 is a continuous single tape body, the adhesive tape 4 can be easily removed from the semiconductor wafer 1.
  • the method of covering the semiconductor wafer 1 with the adhesive tape 4 is not limited to such a method, and a plurality of fragmented adhesive tapes 4 need to be protected from the outer peripheral edge 3 of the semiconductor wafer 1 or protection. You may affix together on the part to do.
  • various processes for the purpose of so-called circuit formation such as thin film formation and patterning are performed on the main surface 2 of the semiconductor wafer 1 covered with the adhesive tape 4.
  • processing include electrode part plating, photoresist application, and plasma etching.
  • the pressure-sensitive adhesive tape containing an acrylic component and a silicone component is preferable because it does not easily fall off the semiconductor wafer 1 even when it comes into contact with water.
  • the adhesive tape 4 is removed from the semiconductor wafer 1.
  • the method for removing the adhesive tape 4 is not particularly limited, and a known method can be used as appropriate.
  • the adhesive tape 4 may be applied to the outer peripheral edge 3 of the semiconductor wafer 1 after the semiconductor wafer 1 is processed, and the adhesive tape 4 may be peeled off from the semiconductor wafer 1 after a lapse of time. Good.
  • the adhesive tape 4 is peeled from the semiconductor wafer 1 to remove contamination such as a resist formed on the outer peripheral edge 3 by processing, and the semiconductor wafer 1 can be removed without washing. Contamination can be removed.
  • Example 1 The semiconductor wafer 1 is a disk-shaped semiconductor wafer having a diameter of 8 inches, and has a main surface 2 and an outer peripheral edge 3.
  • FIGS. 1B and 1C show a state in which the adhesive tape 4 is stuck on the outer peripheral edge 3 of the semiconductor wafer 1 in FIG.
  • the pressure-sensitive adhesive tape 4 is wound from the winding start position 5 shown in FIG. 1C to the winding end position 6 where the pressure-sensitive adhesive tape 4 is wound clockwise and wound over one turn.
  • the manufacturing method of the used adhesive tape 4 is demonstrated.
  • the composition of the pressure-sensitive adhesive is as follows. 100 parts by mass of acrylic ester copolymer (N-2993 manufactured by Nippon Synthetic Chemical Co., Ltd.), 2 parts by mass of tolylene diisocyanate (Coronate L (registered trademark) manufactured by Nippon Polyurethane Industry Co., Ltd.), urethane acrylate (beam set manufactured by Arakawa Chemical Industries, Ltd.) 575 (registered trademark)) 50 parts by mass, photoreaction initiator (Irgacure 907 (registered trademark) manufactured by Ciba Specialty Chemicals), silicone-containing component (Act Flow UTMM-LS2 (registered trademark) manufactured by Soken Chemical Co., Ltd.) 2 parts by weight.
  • Acrylic ester copolymer N-2993 manufactured by Nippon Synthetic Chemical Co., Ltd.
  • tolylene diisocyanate Core L (registered trademark) manufactured by Nippon Polyurethane Industry
  • the toluene / ethyl acetate solution containing this adhesive was transferred and coated with a thickness of 30 ⁇ m on one side of a corona-treated polyethylene film (thickness 30 ⁇ m, width 300 mm) as a substrate, and a peelable film (silicone) not shown in the figure.
  • a polyethylene terephthalate film coated with a release agent was laminated on the surface of the pressure-sensitive adhesive to produce a pressure-sensitive adhesive sheet.
  • the pressure-sensitive adhesive sheet was allowed to stand at 40 ° C. for 5 days, and then cut into a width of 8 mm to obtain a pressure-sensitive adhesive tape 4.
  • a pressure-sensitive adhesive tape 4 was produced with the same pressure-sensitive adhesive composition as in Example 1 except that it did not contain a silicone-containing component, and was applied to 10 semiconductor wafers 1 to perform a plating test. As a result, the plating solution intruded between the adhesive tape 4 and the semiconductor wafer 1 in two of the ten sheets, and the main surface 2 of the semiconductor wafer 1 was not plated.
  • Example 2 As adhesives, acrylic acid ester copolymer (Negami Kogyo, W-248E), methylene diisocyanate (Nippon Polyurethane Industry, Coronate 2067), urethane acrylate (Arakawa Chemical Industries, Beam Set 575), photoreaction initiator (Ciba Specialty)
  • a pressure-sensitive adhesive tape 4 was prepared in the same manner as in Example 1 except that a toluene / ethyl acetate solution containing Chemicals, Irgacure 907) was used, and a plating test was performed.
  • Example 3 The same operation as in Example 1 was performed except that the base film of the adhesive tape 4 was changed from a polyethylene film to a TPO (thermoplastic polyolefin) film (thickness 80 ⁇ m). As a result, no penetration of the plating solution was observed between the adhesive tape 4 and the semiconductor wafer 1, and plating could be formed on the main surface 2 of the semiconductor wafer 1. Similarly, the tape could be peeled without breakage, and even when the outer peripheral edge 3 (the surface peeled off with the adhesive tape 4 attached) was observed with a 10 ⁇ optical microscope, there was no adhesive residue.
  • TPO thermoplastic polyolefin
  • Example 4 A TPO (thermoplastic polyolefin) film is used as a base film using a toluene / ethyl acetate solution containing an acrylic ester copolymer (Nippon Synthetic Chemical Co., N3085) and tolylene diisocyanate (Nippon Polyurethane Industry, Coronate L45E) as an adhesive.
  • An adhesive tape 4 having a width of 4 mm was obtained in the same manner as in Example 1 except that (thickness 80 ⁇ m) was used.
  • An adhesive tape 4 was affixed to the outer peripheral edge 3 of the 8 inch diameter semiconductor wafer 1 covered with the oxide film. After removing the oxide film on the main surface 2 by plasma etching, the adhesive tape 4 was peeled off. As a result, the oxide film on the outer peripheral edge 3 remained. The outer peripheral edge 3 could be protected by the adhesive tape 4.
  • Example 5 In the same manner as in Example 1 except that a toluene / ethyl acetate solution containing an acrylate copolymer (Nippon Synthetic Chemical Co., N3085) and tolylene diisocyanate (Nippon Polyurethane Industry, Coronate L45E) was used as the adhesive. An adhesive tape 4 having a width of 3 mm was obtained. Photoresist was spin-coated on the main surface 2 of the semiconductor wafer 1 having a diameter of 8 inches. At that time, the photoresist spread to the outer peripheral edge 3. The adhesive tape 4 of this example was affixed to the outer peripheral edge 3 where the photoresist was partially laminated.
  • acrylate copolymer Nippon Synthetic Chemical Co., N3085
  • tolylene diisocyanate Nippon Polyurethane Industry, Coronate L45E
  • the photoresist could be removed by the adhesive tape 4.
  • the photoresist that had spread to the outer peripheral edge 3 could be properly removed without requiring cleaning, and the contamination source could be cut off.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Provided is a semiconductor processing method wherein cleaning is not required even when an outer circumferential edge (3) of a semiconductor wafer (1) is contaminated due to processing, the outer circumferential edge (3) of the semiconductor wafer (1) is protected from corrosion and shocks from the external, and furthermore, the semiconductor wafer can be coated with electroless nickel plating.  The semiconductor processing method includes a step of attaching an adhesive tape (4) onto the outer circumferential edge (3) of the semiconductor wafer (1) at the time of processing the semiconductor wafer (1), and a step of removing the adhesive tape (4) from the semiconductor wafer (1).  Furthermore, the adhesive tape (4) to be used in such method is also provided, and an adhesive of the adhesive tape (4) contains an acrylic component and a silicone component.

Description

半導体加工方法及び粘着テープSemiconductor processing method and adhesive tape
本発明は、加工の際に半導体ウエハの外周端縁を粘着テープで被覆し次いでこれを除去することを含む半導体加工方法及びこの半導体加工方法に用いられる粘着テープに関する。 The present invention relates to a semiconductor processing method including covering an outer peripheral edge of a semiconductor wafer with an adhesive tape and then removing the same during processing, and an adhesive tape used in the semiconductor processing method.
半導体ウエハの加工工程では、半導体ウエハの表面に薄膜形成やパターニング等のいわゆる回路形成を目的とした各種加工が行われる。この加工としては、例えば特開２００８－１５３４２５号公報（特許文献１）に示されるように、電極部のめっき、フォトレジストの塗布、プラズマエッチングなどが挙げられる。 In the semiconductor wafer processing step, various processes for the purpose of so-called circuit formation such as thin film formation and patterning are performed on the surface of the semiconductor wafer. Examples of this processing include electrode part plating, photoresist application, plasma etching and the like, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2008-153425 (Patent Document 1).
特開２００８－１５３４２５号公報JP 2008-153425 A
このような加工方法は半導体ウエハの主表面を加工することを目的としているものの、このような加工を必要としていない半導体ウエハの外周端縁部分までも同時に加工してしまうことがあり、半導体ウエハを汚染または腐食してしまう場合があった。半導体ウエハの端縁が汚染した場合には、一般的に、汚染部位を大量の洗浄液で洗浄する必要があるなど、製造効率および環境面で問題とされていた。
さらに、半導体ウエハを取り扱う際に、外部からの衝撃を受けやすい半導体ウエハの外周端縁が破損する場合があった。 Although such a processing method is intended to process the main surface of the semiconductor wafer, there is a case where the outer peripheral edge portion of the semiconductor wafer that does not require such processing is also processed at the same time. There was a case where it was contaminated or corroded. When the edge of a semiconductor wafer is contaminated, it is generally a problem in terms of manufacturing efficiency and environment, such as the need to clean the contaminated portion with a large amount of cleaning liquid.
Furthermore, when handling a semiconductor wafer, the outer peripheral edge of the semiconductor wafer that is susceptible to external impacts may be damaged.
また特に、硬度および耐食性に優れ、均一な厚みのコーティングを形成できる無電解ニッケルめっき加工を半導体ウエハに施そうとしても、単に半導体ウエハをめっき液に浸しただけでは半導体ウエハ表面にニッケル燐合金のめっきを十分に形成できない場合があった。 In particular, even if an electroless nickel plating process that is excellent in hardness and corrosion resistance and can form a coating with a uniform thickness is applied to a semiconductor wafer, the surface of the semiconductor wafer is simply immersed in a plating solution. In some cases, plating could not be formed sufficiently.
本発明は上記事情に鑑みてなされたものであり、加工により半導体ウエハの外周端縁が汚染した場合であっても洗浄することなく当該汚染を取り除くことができ、半導体ウエハの外周端縁を腐食や外部からの衝撃から保護し、しかも無電解ニッケルめっきによるコーティングを可能にすることができる半導体加工方法及びこの方法に用いるための粘着テープを提供することを目的とする。 The present invention has been made in view of the above circumstances, and even when the outer peripheral edge of the semiconductor wafer is contaminated by processing, the contamination can be removed without cleaning, and the outer peripheral edge of the semiconductor wafer is corroded. Another object of the present invention is to provide a semiconductor processing method that can be protected from impacts from the outside and can be coated by electroless nickel plating, and an adhesive tape for use in this method.
本発明者らは、上記技術課題を解決すべく鋭意検討を行ってきた。その結果、半導体ウエハを加工する前に半導体ウエハの外周端縁を粘着テープで保護することにより、半導体ウエハの外周端縁を汚染や衝撃等から簡便に保護でき、しかも剥離に伴う洗浄を必要とすることがなく、効率的に半導体ウエハの薄膜形成処理やパターン処理を行うことができることを見出した。また、半導体ウエハを加工した後に半導体ウエハの外周端縁に粘着テープを貼り付け、次いで当該粘着テープを半導体ウエハから剥離することにより、加工により外周端縁に副次的に形成されたレジスト等の汚染までも同時に半導体ウエハから取り除くことができることを見出した。 The present inventors have intensively studied to solve the above technical problem. As a result, by protecting the outer peripheral edge of the semiconductor wafer with an adhesive tape before processing the semiconductor wafer, the outer peripheral edge of the semiconductor wafer can be easily protected from contamination, impact, etc., and cleaning associated with peeling is required. It has been found that the semiconductor wafer thin film forming process and pattern processing can be performed efficiently without the need for the process. Also, after processing the semiconductor wafer, affixing an adhesive tape to the outer peripheral edge of the semiconductor wafer, and then peeling the adhesive tape from the semiconductor wafer, such as a resist formed on the outer peripheral edge by processing. It has been found that even contamination can be removed from the semiconductor wafer at the same time.
また、本発明者らは、半導体ウエハに十分な無電解ニッケルめっきを施すには、以下の実施例に示すように半導体ウエハに絶縁部分を形成する必要があることを見出した。本発明によれば、半導体ウエハの外周端縁を電気絶縁性を有する粘着テープで保護することにより、粘着テープが半導体ウエハ上に絶縁部分を形成するため、半導体ウエハの主表面に無電解ニッケルめっき加工を施すのに特に好適である。 Further, the present inventors have found that in order to perform sufficient electroless nickel plating on a semiconductor wafer, it is necessary to form an insulating portion on the semiconductor wafer as shown in the following examples. According to the present invention, since the adhesive tape forms an insulating portion on the semiconductor wafer by protecting the outer peripheral edge of the semiconductor wafer with the adhesive tape having electrical insulation, the electroless nickel plating is applied to the main surface of the semiconductor wafer. It is particularly suitable for processing.
すなわち、一態様では、本発明は、半導体ウエハの加工の際に粘着テープを半導体ウエハの外周端縁に貼り付ける工程および前記半導体ウエハから前記粘着テープを除去する工程を含んでなる半導体加工方法に関する。 That is, in one aspect, the present invention relates to a semiconductor processing method including a step of attaching an adhesive tape to an outer peripheral edge of a semiconductor wafer and a step of removing the adhesive tape from the semiconductor wafer when processing a semiconductor wafer. .
さらに、本発明者等は、粘着テープの粘着剤がアクリル成分とシリコーン成分を有する場合に、半導体ウエハと粘着テープとの間に水が進入するのを特に抑制でき、加工の際に半導体ウエハから粘着テープが脱落しにくいことを見出した。このため、このような粘着テープは、半導体ウエハを液体に浸す必要がありしかも加工の際に絶縁部分を必要とする無電解ニッケルめっきにおいて、特に安定して適用することができる。 Furthermore, the present inventors can particularly prevent water from entering between the semiconductor wafer and the adhesive tape when the adhesive of the adhesive tape has an acrylic component and a silicone component, and from the semiconductor wafer during processing. It was found that the adhesive tape is difficult to fall off. For this reason, such an adhesive tape can be applied particularly stably in electroless nickel plating that requires a semiconductor wafer to be immersed in a liquid and that requires an insulating portion during processing.
すなわち、他の態様では、本発明は、粘着テープを半導体ウエハの外周端縁に貼り付ける工程及び粘着テープを除去する工程を有する半導体加工方法に用いる粘着テープであって、粘着テープの粘着剤がアクリル成分とシリコーン成分とを有する粘着テープに関する。 That is, in another aspect, the present invention is an adhesive tape used in a semiconductor processing method including a step of attaching an adhesive tape to an outer peripheral edge of a semiconductor wafer and a step of removing the adhesive tape, wherein the adhesive of the adhesive tape is The present invention relates to an adhesive tape having an acrylic component and a silicone component.
本発明の実施例にかかる半導体加工方法およびその方法に使用する粘着テープを示す概略図である。It is the schematic which shows the semiconductor processing method concerning the Example of this invention, and the adhesive tape used for the method.
１　半導体ウエハ
２　主表面
３　外周端縁
４　粘着テープ
５　巻き始め位置
６　巻き終わり位置 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Main surface 3 Perimeter edge 4 Adhesive tape 5 Winding start position 6 Winding end position
以下、本発明の実施の形態について説明する。 Embodiments of the present invention will be described below.
＜粘着テープ＞
粘着テープは基材フィルムの片面に粘着剤層が設けられた構成が望ましい。
粘着テープの幅は２ｍｍから１０ｍｍの間が望ましい。粘着テープの幅が小さいと、半導体ウエハの外周端縁からテープがはずれやすくなる。粘着テープの幅が大きいと、半導体ウエハの外周端縁に粘着テープを隙間無く貼り付けることが困難になる。 <Adhesive tape>
As for an adhesive tape, the structure by which the adhesive layer was provided in the single side | surface of a base film is desirable.
The width of the adhesive tape is preferably between 2 mm and 10 mm. When the width of the adhesive tape is small, the tape is easily detached from the outer peripheral edge of the semiconductor wafer. If the width of the adhesive tape is large, it becomes difficult to attach the adhesive tape to the outer peripheral edge of the semiconductor wafer without any gap.
基材フィルムを構成する樹脂材料は、ポリエチレン、ポリプロピレン、ポリエチレンテレフタレート、ポリエチレンナフタレートまたはこれらを含む共重合体が好ましい。基材フィルムの厚みは５μｍから１５０μｍの間が望ましい。基材フィルムの厚みが薄いと、粘着テープを半導体ウエハから剥離除去する際に、粘着テープが破断して半導体ウエハの外周端縁に残留してしまう可能性がある。また基材フィルムの厚みが厚いと、粘着テープを半導体ウエハの外周端縁に隙間無く貼り付けることが困難になる。 The resin material constituting the base film is preferably polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate or a copolymer containing these. The thickness of the base film is preferably between 5 μm and 150 μm. If the thickness of the base film is thin, when the adhesive tape is peeled off from the semiconductor wafer, the adhesive tape may break and remain on the outer peripheral edge of the semiconductor wafer. Moreover, when the thickness of the base film is thick, it becomes difficult to attach the adhesive tape to the outer peripheral edge of the semiconductor wafer without a gap.
粘着テープの粘着剤層を構成する粘着剤は、アクリル成分とシリコーン成分の両方を含有する、さらには、アクリル成分とシリコーン成分の両者が結合した成分を含有することが好ましい。
シリコーンを主成分とする粘着剤を用いると、シロキサン成分が半導体ウエハの汚染源となる可能性がある。また、アクリルを主成分とする粘着剤を用いると、半導体ウエハの主表面の加工や洗浄の工程において粘着テープが水に触れた際に、水が半導体ウエハと粘着テープとの間に浸入して粘着テープが半導体ウエハから脱落する可能性がある。
粘着剤がアクリル成分とシリコーン成分の両方を含有する、さらには、アクリル成分とシリコーン成分の両者が結合した成分を含有することにより、粘着剤による半導体ウエハの汚染を抑制すると同時に、水との接触による粘着テープの脱離を抑制することができる。
ここで言う水とは、酸、アルカリ、あるいはイオンを含むような水溶液、特に無電解ニッケルめっきに用いられるめっき液も含む。 The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape preferably contains both an acrylic component and a silicone component, and further contains a component in which both the acrylic component and the silicone component are combined.
If an adhesive mainly composed of silicone is used, the siloxane component may become a contamination source of the semiconductor wafer. In addition, when an adhesive mainly composed of acrylic is used, when the adhesive tape comes into contact with water during the processing or cleaning of the main surface of the semiconductor wafer, the water enters between the semiconductor wafer and the adhesive tape. There is a possibility that the adhesive tape may fall off the semiconductor wafer.
The adhesive contains both an acrylic component and a silicone component, and further contains a combined component of both the acrylic component and the silicone component, thereby preventing contamination of the semiconductor wafer by the adhesive and at the same time making contact with water. It is possible to suppress detachment of the adhesive tape due to.
The water mentioned here includes an aqueous solution containing an acid, an alkali, or an ion, particularly a plating solution used for electroless nickel plating.
アクリル成分とシリコーン成分とを含有する粘着剤は、アクリル粘着剤にシリコーン成分を配合することによって製造することができる。好ましい配合比は、アクリル粘着剤１００質量部に対してシリコーン成分が０．５質量部から５質量部となる範囲である。 The pressure-sensitive adhesive containing the acrylic component and the silicone component can be produced by blending the silicone component with the acrylic pressure-sensitive adhesive. A preferable blending ratio is a range in which the silicone component is 0.5 to 5 parts by mass with respect to 100 parts by mass of the acrylic pressure-sensitive adhesive.
シリコーン成分としては、例えば（メタ）アクリル酸エステル骨格にシリコーンを含有する重合体を挙げることができる。このようなシリコーン成分をアクリル粘着剤に配合するだけでも好ましいが、さらに好ましくは、シリコーン成分とアクリル成分を結合させた成分を用いることが好ましい。これは、シリコーン成分がアクリル成分、例えばアクリル酸エステルと結合すると、粘着剤としての結合力が強化されるためである。より具体的に説明すると、例えば、水酸基を有するシリコーン成分が、イソシアネート硬化剤を介して、アクリル酸エステル共重合体と結合されたものを挙げることができる。 As a silicone component, the polymer which contains silicone in (meth) acrylic acid ester frame | skeleton can be mentioned, for example. Although it is preferable to add such a silicone component to the acrylic pressure-sensitive adhesive, it is more preferable to use a component obtained by combining a silicone component and an acrylic component. This is because when the silicone component is bonded to an acrylic component such as an acrylate ester, the bonding force as an adhesive is strengthened. More specifically, for example, a silicone component having a hydroxyl group bonded to an acrylate copolymer via an isocyanate curing agent can be exemplified.
粘着剤には、粘着力調整のために粘着付与剤を含んでもよい。粘着剤は、一般感圧型あるいは紫外線硬化により粘着力が低減する紫外線剥離型のいずれでもよいが、被着体材料に対して、２Ｎ／１０ｍｍ以下の剥離力となるものが望ましい。剥離力が高すぎると粘着テープを半導体ウエハの外周端縁から剥離除去し難くなり、粘着テープの破断、粘着剤残留又は半導体ウエハの破損が発生しやすくなる。 The pressure-sensitive adhesive may contain a tackifier for adjusting the adhesive strength. The pressure-sensitive adhesive may be either a general pressure-sensitive type or an ultraviolet peeling type in which the adhesive strength is reduced by ultraviolet curing. If the peeling force is too high, it is difficult to peel and remove the adhesive tape from the outer peripheral edge of the semiconductor wafer, and breakage of the adhesive tape, residual adhesive or damage to the semiconductor wafer is likely to occur.
粘着剤層の厚みは０．１μｍから６０μｍの間が望ましい。粘着剤層が薄いと、粘着テープの貼り付けあるいは半導体ウエハの加工中に、粘着テープが半導体ウエハの外周端縁から脱落する可能性がある。一方、粘着剤層が厚いと、粘着テープを剥離除去しにくくなる。 The thickness of the pressure-sensitive adhesive layer is preferably between 0.1 μm and 60 μm. If the pressure-sensitive adhesive layer is thin, the pressure-sensitive adhesive tape may fall off from the outer peripheral edge of the semiconductor wafer during the application of the pressure-sensitive adhesive tape or the processing of the semiconductor wafer. On the other hand, when the pressure-sensitive adhesive layer is thick, it becomes difficult to peel and remove the pressure-sensitive adhesive tape.
粘着剤層は、基材フィルム上に粘着剤を直接塗工することによって形成することができる。粘着剤層を構成する粘着剤を基材フィルムに塗工する手段は、特に限定されるものではなく、例えば、粘着剤の溶液を剥離フィルムの片面に塗布し、乾燥させた後に基材フィルム状に転写させる方法がある。いずれの方法においても、粘着テープにおける粘着剤層側表面は使用時まで剥離性フィルムで保護されていることが望ましい。
また、粘着剤層は、粘着剤からなる層の表裏がそれぞれ剥離性フィルムでラミネートされた状態で入手できるものを利用することもできる。この場合には、表面または裏面の一方の剥離性フィルムを除去して粘着剤を露出し、この露出面を基材フィルムに貼り付けることにより、粘着剤層が剥離性フィルムで保護された粘着テープを得ることができる。または、表面または裏面の一方の剥離性フィルムを除去して粘着剤を露出し、ウエハに貼り付け後に、残留する剥離性フィルムを剥離して粘着剤層が露出した状態でウエハを加工し、別途粘着テープを前記粘着剤層に接触させて、粘着テープと粘着剤層を剥がすことも可能である。 The pressure-sensitive adhesive layer can be formed by directly applying a pressure-sensitive adhesive on the base film. The means for applying the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer to the base film is not particularly limited. For example, the base film-like film is formed after applying a solution of the pressure-sensitive adhesive to one side of the release film and drying it. There is a method to transfer to. In any method, it is desirable that the pressure-sensitive adhesive layer side surface of the pressure-sensitive adhesive tape is protected with a peelable film until use.
Moreover, what can be obtained in the state by which the front and back of the layer which consists of adhesives were each laminated | stacked with the peelable film can also be utilized for an adhesive layer. In this case, the pressure-sensitive adhesive tape in which the pressure-sensitive adhesive layer is protected by the peelable film by removing one of the peelable films on the front surface or the back surface to expose the pressure-sensitive adhesive and pasting the exposed surface on the base film. Can be obtained. Alternatively, one of the peelable films on the front or back surface is removed to expose the adhesive, and after being attached to the wafer, the remaining peelable film is peeled off and the wafer is processed with the adhesive layer exposed. It is also possible to peel the adhesive tape and the adhesive layer by bringing the adhesive tape into contact with the adhesive layer.
＜半導体加工方法＞
上記の粘着テープを用いて半導体ウエハを加工する方法の一態様について、図１を参照しながら説明する。
まず、半導体ウエハ１を加工する前に、半導体ウエハ１の外周端縁３を粘着テープ４で被覆する。図１では、半導体ウエハ１の外周に沿って、巻き始め位置５から一周以上にわたって粘着テープ４を巻き付け、巻き終わり位置６に到達するように被覆している。このように巻き付けることにより、半導体ウエハ１の外周端縁３を途切れることなく被覆することができ、外部からの衝撃に対する耐性を均一に向上させることができる。また、半導体ウエハ１の外周端縁３をその全周にわたって確実に汚染から保護することができる。さらに、半導体ウエハ１に巻き付けられた粘着テープ４は連続した一本のテープ体であるため、半導体ウエハ１から粘着テープ４を簡便に除去することができる。
もちろん半導体ウエハ１に粘着テープ４を被覆する方法はこのような方法に限定されるものではなく、断片化された複数本の粘着テープ４を、半導体ウエハ１の外周端縁３や保護を必要とする部位に貼り合わせてもよい。 <Semiconductor processing method>
One mode of a method for processing a semiconductor wafer using the above adhesive tape will be described with reference to FIG.
First, before processing the semiconductor wafer 1, the outer peripheral edge 3 of the semiconductor wafer 1 is covered with the adhesive tape 4. In FIG. 1, the adhesive tape 4 is wound around the outer periphery of the semiconductor wafer 1 from the winding start position 5 over one turn and covered so as to reach the winding end position 6. By winding in this way, the outer peripheral edge 3 of the semiconductor wafer 1 can be covered without interruption, and the resistance against external impact can be improved uniformly. Further, the outer peripheral edge 3 of the semiconductor wafer 1 can be reliably protected from contamination over the entire periphery. Furthermore, since the adhesive tape 4 wound around the semiconductor wafer 1 is a continuous single tape body, the adhesive tape 4 can be easily removed from the semiconductor wafer 1.
Of course, the method of covering the semiconductor wafer 1 with the adhesive tape 4 is not limited to such a method, and a plurality of fragmented adhesive tapes 4 need to be protected from the outer peripheral edge 3 of the semiconductor wafer 1 or protection. You may affix together on the part to do.
次いで、粘着テープ４で被覆した半導体ウエハ１の主表面２に、薄膜形成やパターニング等のいわゆる回路形成を目的とした各種加工を行う。このような加工としては、例えば電極部のめっき、フォトレジストの塗布、プラズマエッチングなどが挙げられる。
特に、半導体ウエハをめっき液に浸し、めっき処理の間、半導体ウエハ上に絶縁部分を保持する必要のある無電解ニッケルめっきを行うこともできる。この場合には、粘着剤がアクリル成分とシリコーン成分とを含有する粘着テープが、水と接触しても半導体ウエハ１から脱落しにくいため、好適である。 Next, various processes for the purpose of so-called circuit formation such as thin film formation and patterning are performed on the main surface 2 of the semiconductor wafer 1 covered with the adhesive tape 4. Examples of such processing include electrode part plating, photoresist application, and plasma etching.
In particular, it is possible to immerse a semiconductor wafer in a plating solution and perform electroless nickel plating that requires holding an insulating portion on the semiconductor wafer during the plating process. In this case, the pressure-sensitive adhesive tape containing an acrylic component and a silicone component is preferable because it does not easily fall off the semiconductor wafer 1 even when it comes into contact with water.
最後に、加工が終了した後に、半導体ウエハ１から粘着テープ４を除去する。粘着テープ４を除去する方法は、特に制限されず、周知の方法を適宜用いることができる。
また、上記とは別の態様として、半導体ウエハ１を加工した後に半導体ウエハ１の外周端縁３に粘着テープ４を貼り付け、適宜時間経過後に当該粘着テープ４を半導体ウエハ１から剥離してもよい。この場合には、半導体ウエハ１から粘着テープ４を剥離することによって、加工により外周端縁３に副次的に形成されたレジスト等の汚染を取り除くことができ、洗浄することなく半導体ウエハ１から汚染を除去することができる。 Finally, after finishing the processing, the adhesive tape 4 is removed from the semiconductor wafer 1. The method for removing the adhesive tape 4 is not particularly limited, and a known method can be used as appropriate.
As another aspect, the adhesive tape 4 may be applied to the outer peripheral edge 3 of the semiconductor wafer 1 after the semiconductor wafer 1 is processed, and the adhesive tape 4 may be peeled off from the semiconductor wafer 1 after a lapse of time. Good. In this case, the adhesive tape 4 is peeled from the semiconductor wafer 1 to remove contamination such as a resist formed on the outer peripheral edge 3 by processing, and the semiconductor wafer 1 can be removed without washing. Contamination can be removed.
本発明をさらに具体的に説明するために、図１を参照しながら以下に実施例及び比較例を記すが、本発明はこれらにより限定を受けるものではない。 In order to describe the present invention more specifically, examples and comparative examples will be described below with reference to FIG. 1, but the present invention is not limited thereto.
（実施例１）
半導体ウエハ１は、直径８インチの円板状の半導体ウエハであり、主表面２および外周端縁３を有する。図１（Ａ）の半導体ウエハ１の外周端縁３に粘着テープ４を貼った状態を図１（Ｂ）、図１（Ｃ）に示す。粘着テープ４は図１（Ｃ）に示される巻き始め位置５から、時計回りに粘着テープ４を巻き、一周を超えて巻いた巻き終わり位置６まで巻きつけられている。 Example 1
The semiconductor wafer 1 is a disk-shaped semiconductor wafer having a diameter of 8 inches, and has a main surface 2 and an outer peripheral edge 3. FIGS. 1B and 1C show a state in which the adhesive tape 4 is stuck on the outer peripheral edge 3 of the semiconductor wafer 1 in FIG. The pressure-sensitive adhesive tape 4 is wound from the winding start position 5 shown in FIG. 1C to the winding end position 6 where the pressure-sensitive adhesive tape 4 is wound clockwise and wound over one turn.
使用した粘着テープ４の製造方法について説明する。
（粘着シートの製造）
粘着剤の組成は次のものである。アクリル酸エステル共重合体（日本合成化学社製Ｎ－２９９３）１００質量部、トリレンジイソシアネート（日本ポリウレタン工業社製コロネートＬ（登録商標））２質量部、ウレタンアクリレート（荒川化学工業社製ビームセット５７５（登録商標））５０質量部、光反応開始剤（チバスペシャリティーケミカルズ社製イルガキュア９０７（登録商標））３質量部、シリコーン含有成分（綜研化学社製アクトフローＵＴＭＭ－ＬＳ２（登録商標））２質量部。
この粘着剤を含むトルエン・酢酸エチル溶液を、基材としてのコロナ処理されたポリエチレンフィルム（厚み３０μｍ、幅３００ｍｍ）の片面に３０μｍの厚みで転写塗工し、さらに図示外の剥離性フィルム（シリコーン系剥離剤が塗工処理されたポリエチレンテレフタレートフィルム）を粘着剤の表面に積層して粘着シートを製造した。 The manufacturing method of the used adhesive tape 4 is demonstrated.
(Manufacture of adhesive sheet)
The composition of the pressure-sensitive adhesive is as follows. 100 parts by mass of acrylic ester copolymer (N-2993 manufactured by Nippon Synthetic Chemical Co., Ltd.), 2 parts by mass of tolylene diisocyanate (Coronate L (registered trademark) manufactured by Nippon Polyurethane Industry Co., Ltd.), urethane acrylate (beam set manufactured by Arakawa Chemical Industries, Ltd.) 575 (registered trademark)) 50 parts by mass, photoreaction initiator (Irgacure 907 (registered trademark) manufactured by Ciba Specialty Chemicals), silicone-containing component (Act Flow UTMM-LS2 (registered trademark) manufactured by Soken Chemical Co., Ltd.) 2 parts by weight.
The toluene / ethyl acetate solution containing this adhesive was transferred and coated with a thickness of 30 μm on one side of a corona-treated polyethylene film (thickness 30 μm, width 300 mm) as a substrate, and a peelable film (silicone) not shown in the figure. A polyethylene terephthalate film coated with a release agent was laminated on the surface of the pressure-sensitive adhesive to produce a pressure-sensitive adhesive sheet.
（粘着テープの製造）
この粘着シートを４０℃で５日間静置したのち、８ｍｍ幅に裁断して粘着テープ４を得た。 (Manufacture of adhesive tape)
The pressure-sensitive adhesive sheet was allowed to stand at 40 ° C. for 5 days, and then cut into a width of 8 mm to obtain a pressure-sensitive adhesive tape 4.
（効果の確認）
粘着テープ４が貼り付けられた半導体ウエハ１（図１（Ｂ）、（Ｃ）参照）を、無電解ニッケルめっき浴に浸漬しても、粘着テープ４の剥がれがなく、粘着テープ４の貼り付け面以外の面にめっきすることができた。めっき後、粘着テープ４に紫外線を照射量１５０ｍＪ／ｃｍ２で照射し、粘着テープ４を剥離した。このときに粘着テープ４に破断は発生しなかった。また粘着テープ４の剥離後、外周端縁３（粘着テープ４を貼り付けて剥がした面）を１０倍の光学顕微鏡で観察しても、糊残りがなかった。このような試験を半導体ウエハ１０枚に対して行ったところ、いずれも同様の結果を得た。 (Confirmation of effect)
Even if the semiconductor wafer 1 with the adhesive tape 4 attached (see FIGS. 1B and 1C) is immersed in an electroless nickel plating bath, the adhesive tape 4 is not peeled off and the adhesive tape 4 is attached. It was possible to plate on surfaces other than the surface. After plating, the adhesive tape 4 was irradiated with ultraviolet rays at an irradiation amount of 150 mJ / cm 2 to peel off the adhesive tape 4. At this time, the adhesive tape 4 did not break. Further, even after the adhesive tape 4 was peeled off, there was no adhesive residue even when the outer peripheral edge 3 (the surface on which the adhesive tape 4 was applied and peeled) was observed with a 10 × optical microscope. When such a test was performed on 10 semiconductor wafers, the same results were obtained in all cases.
（比較例１）
シリコーン含有成分を含まないことを除いては、実施例１と同様の粘着剤組成で粘着テープ４を作製し、１０枚の半導体ウエハ１に対して貼り付けを行い、めっき試験を行った。その結果、１０枚のうち２枚について粘着テープ４と半導体ウエハ１の間にめっき液の侵入がみられ、半導体ウエハ１の主表面２にめっきがされなかった。 (Comparative Example 1)
A pressure-sensitive adhesive tape 4 was produced with the same pressure-sensitive adhesive composition as in Example 1 except that it did not contain a silicone-containing component, and was applied to 10 semiconductor wafers 1 to perform a plating test. As a result, the plating solution intruded between the adhesive tape 4 and the semiconductor wafer 1 in two of the ten sheets, and the main surface 2 of the semiconductor wafer 1 was not plated.
（比較例２）
粘着テープ４を貼り付けずに、実施例１と同様の無電解ニッケルめっきをした結果、めっきはできなかった。無電解めっきには、実施例１のように、絶縁部分が必要であることを確認できた。 (Comparative Example 2)
As a result of electroless nickel plating similar to that of Example 1 without attaching the adhesive tape 4, plating could not be performed. It was confirmed that the electroless plating required an insulating portion as in Example 1.
（実施例２）
粘着剤として、アクリル酸エステル共重合体（根上工業、Ｗ－２４８Ｅ）、メチレンジイソシアネート（日本ポリウレタン工業、コロネート２０６７）、ウレタンアクリレート（荒川化学工業、ビームセット５７５）、光反応開始剤（チバスペシャリティーケミカルズ、イルガキュア９０７）を含むトルエン・酢酸エチル溶液を用いたこと以外は、実施例１と同様に粘着テープ４を作製し、めっき試験を行った。
その結果、粘着テープ４と半導体ウエハ１の間にめっき液の侵入は見られず、半導体ウエハ１の主表面２にめっきを形成することができた。また同様にテープの剥離を破断なく行うことができ、さらに外周端縁３（粘着テープ４を貼り付けて剥がした面）を１０倍の光学顕微鏡で観察しても、糊残りがなかった。 (Example 2)
As adhesives, acrylic acid ester copolymer (Negami Kogyo, W-248E), methylene diisocyanate (Nippon Polyurethane Industry, Coronate 2067), urethane acrylate (Arakawa Chemical Industries, Beam Set 575), photoreaction initiator (Ciba Specialty) A pressure-sensitive adhesive tape 4 was prepared in the same manner as in Example 1 except that a toluene / ethyl acetate solution containing Chemicals, Irgacure 907) was used, and a plating test was performed.
As a result, no penetration of the plating solution was observed between the adhesive tape 4 and the semiconductor wafer 1, and plating could be formed on the main surface 2 of the semiconductor wafer 1. Similarly, the tape could be peeled without breakage, and even when the outer peripheral edge 3 (the surface peeled off with the adhesive tape 4 attached) was observed with a 10 × optical microscope, there was no adhesive residue.
（実施例３）
粘着テープ４の基材フィルムをポリエチレンフィルムからＴＰＯ（熱可塑性ポリオレフィン）フィルム（厚み８０μｍ）に変更したこと以外は実施例１と同様の方法の操作を行った。その結果、粘着テープ４と半導体ウエハ１の間にめっき液の侵入は見られず、半導体ウエハ１の主表面２にめっきを形成することができた。また同様にテープの剥離を破断なく行うことができ、さらに外周端縁３（粘着テープ４を貼り付けて剥がした面）を１０倍の光学顕微鏡で観察しても、糊残りがなかった。 (Example 3)
The same operation as in Example 1 was performed except that the base film of the adhesive tape 4 was changed from a polyethylene film to a TPO (thermoplastic polyolefin) film (thickness 80 μm). As a result, no penetration of the plating solution was observed between the adhesive tape 4 and the semiconductor wafer 1, and plating could be formed on the main surface 2 of the semiconductor wafer 1. Similarly, the tape could be peeled without breakage, and even when the outer peripheral edge 3 (the surface peeled off with the adhesive tape 4 attached) was observed with a 10 × optical microscope, there was no adhesive residue.
（実施例４）
粘着剤として、アクリル酸エステル共重合体（日本合成化学、Ｎ３０８５）およびトリレンジイソシアネート（日本ポリウレタン工業、コロネートＬ４５Ｅ）を含むトルエン・酢酸エチル溶液を用い、基材フィルムとしてＴＰＯ（熱可塑性ポリオレフィン）フィルム（厚み８０μｍ）を用いたこと以外は実施例１と同様の方法で幅４ｍｍの粘着テープ４を得た。
酸化膜で被覆された直径８インチの半導体ウエハ１の外周端縁３に粘着テープ４を貼り付けた。プラズマエッチングにより主表面２の酸化膜を除去したのち、粘着テープ４を剥がしたところ、外周端縁３の酸化膜は残留していた。粘着テープ４によって外周端縁３を保護できた。 Example 4
A TPO (thermoplastic polyolefin) film is used as a base film using a toluene / ethyl acetate solution containing an acrylic ester copolymer (Nippon Synthetic Chemical Co., N3085) and tolylene diisocyanate (Nippon Polyurethane Industry, Coronate L45E) as an adhesive. An adhesive tape 4 having a width of 4 mm was obtained in the same manner as in Example 1 except that (thickness 80 μm) was used.
An adhesive tape 4 was affixed to the outer peripheral edge 3 of the 8 inch diameter semiconductor wafer 1 covered with the oxide film. After removing the oxide film on the main surface 2 by plasma etching, the adhesive tape 4 was peeled off. As a result, the oxide film on the outer peripheral edge 3 remained. The outer peripheral edge 3 could be protected by the adhesive tape 4.
（実施例５）
粘着剤として、アクリル酸エステル共重合体（日本合成化学、Ｎ３０８５）およびトリレンジイソシアネート（日本ポリウレタン工業、コロネートＬ４５Ｅ）を含むトルエン・酢酸エチル溶液を用いたこと以外は実施例１と同様の方法で幅３ｍｍの粘着テープ４を得た。
直径８インチの半導体ウエハ１の主表面２にフォトレジストをスピンコーティングした。その際に、外周端縁３にまでフォトレジストが広がった。フォトレジストを部分的に積層した外周端縁３に本実施例の粘着テープ４を貼り付けた。貼り付けてから２０分経過した後に粘着テープ４を剥がしたところ、粘着テープ４によってフォトレジストを除去することができた。外周端縁３にまで広がってしまったフォトレジストを洗浄を要することなく適切に除去でき、汚染源を絶つことができた。 (Example 5)
In the same manner as in Example 1 except that a toluene / ethyl acetate solution containing an acrylate copolymer (Nippon Synthetic Chemical Co., N3085) and tolylene diisocyanate (Nippon Polyurethane Industry, Coronate L45E) was used as the adhesive. An adhesive tape 4 having a width of 3 mm was obtained.
Photoresist was spin-coated on the main surface 2 of the semiconductor wafer 1 having a diameter of 8 inches. At that time, the photoresist spread to the outer peripheral edge 3. The adhesive tape 4 of this example was affixed to the outer peripheral edge 3 where the photoresist was partially laminated. When the adhesive tape 4 was peeled off after 20 minutes had passed since the attachment, the photoresist could be removed by the adhesive tape 4. The photoresist that had spread to the outer peripheral edge 3 could be properly removed without requiring cleaning, and the contamination source could be cut off.
以上、本発明を実施例に基づいて説明した。この実施例はあくまで例示であり、種々の変形例が可能なこと、またそうした変形例も本発明の範囲にあることは当業者に理解されるところである。 In the above, this invention was demonstrated based on the Example. It is to be understood by those skilled in the art that this embodiment is merely an example, and that various modifications are possible and that such modifications are within the scope of the present invention.

Claims (10)

  1. 半導体ウエハの加工の際に粘着テープを半導体ウエハの外周端縁に貼り付ける工程および前記半導体ウエハから前記粘着テープを除去する工程を含んでなる半導体加工方法。 A semiconductor processing method comprising a step of attaching an adhesive tape to an outer peripheral edge of a semiconductor wafer during processing of the semiconductor wafer and a step of removing the adhesive tape from the semiconductor wafer.
  2. 粘着テープを半導体ウエハの外周端縁に貼り付ける工程が半導体ウエハの加工前に行われ、かつ、前記半導体ウエハから前記粘着テープを除去する工程が半導体ウエハの加工後に行われる、請求項１記載の半導体加工方法。 The process of affixing an adhesive tape to the outer periphery edge of a semiconductor wafer is performed before the processing of the semiconductor wafer, and the process of removing the adhesive tape from the semiconductor wafer is performed after the processing of the semiconductor wafer. Semiconductor processing method.
  3. 半導体ウエハの加工が無電解ニッケルめっきである、請求項１または２に記載の半導体加工方法。 The semiconductor processing method according to claim 1, wherein the processing of the semiconductor wafer is electroless nickel plating.
  4. 粘着テープが電気絶縁性を有する、請求項１ないし３のいずれか一項に記載の半導体加工方法。 The semiconductor processing method as described in any one of Claim 1 thru | or 3 with which an adhesive tape has electrical insulation.
  5. 粘着テープの粘着剤がアクリル成分とシリコーン成分を有する、請求項１ないし４のいずれか一項に記載の半導体加工方法。 The semiconductor processing method as described in any one of Claims 1 thru | or 4 with which the adhesive of an adhesive tape has an acrylic component and a silicone component.
  6. 粘着テープの粘着剤がアクリル成分とシリコーン成分の両者が結合した成分を含有する、請求項１ないし５のいずれか一項に記載の半導体加工方法。 The semiconductor processing method according to claim 1, wherein the adhesive of the adhesive tape contains a component in which both an acrylic component and a silicone component are bonded.
  7. 半導体ウエハの外周端縁を半導体ウエハの加工による汚染から保護する、請求項１ないし６のいずれか一項に記載の半導体加工方法。 The semiconductor processing method according to claim 1, wherein an outer peripheral edge of the semiconductor wafer is protected from contamination due to processing of the semiconductor wafer.
  8. 半導体ウエハの外周端縁を半導体ウエハの加工による外部からの衝撃から保護する、請求項１ないし６のいずれか一項に記載の半導体加工方法。 The semiconductor processing method according to claim 1, wherein an outer peripheral edge of the semiconductor wafer is protected from an external impact caused by the processing of the semiconductor wafer.
  9. 粘着テープを半導体ウエハの外周端縁に貼り付ける工程及び粘着テープを除去する工程を有する半導体加工方法に用いる粘着テープであって、粘着テープの粘着剤がアクリル成分とシリコーン成分とを有する粘着テープ。 An adhesive tape used in a semiconductor processing method including a step of attaching an adhesive tape to an outer peripheral edge of a semiconductor wafer and a step of removing the adhesive tape, wherein the adhesive of the adhesive tape has an acrylic component and a silicone component.
  10. 粘着剤にアクリル成分とシリコーン成分の両者が結合された成分が配合された、請求項９記載の粘着テープ。 The pressure-sensitive adhesive tape according to claim 9, wherein a component in which both an acrylic component and a silicone component are bonded to the pressure-sensitive adhesive is blended.
PCT/JP2009/063806 2008-08-11 2009-08-04 Semiconductor processing method and adhesive tape WO2010018767A1 (en)

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JP2008206676A JP2011222541A (en) 2008-08-11 2008-08-11 Semiconductor processing method and adhesive tape
JP2009004347A JP2011219503A (en) 2009-01-13 2009-01-13 Adhesive tape
JP2009-004347 2009-01-13

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