WO2010010915A1 - フォトマスク用光学部材及びその製造方法 - Google Patents

フォトマスク用光学部材及びその製造方法 Download PDF

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Publication number
WO2010010915A1
WO2010010915A1 PCT/JP2009/063168 JP2009063168W WO2010010915A1 WO 2010010915 A1 WO2010010915 A1 WO 2010010915A1 JP 2009063168 W JP2009063168 W JP 2009063168W WO 2010010915 A1 WO2010010915 A1 WO 2010010915A1
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Prior art keywords
optical member
photomask
quartz glass
tio
transmittance
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PCT/JP2009/063168
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English (en)
French (fr)
Japanese (ja)
Inventor
俊雄 吉成
安住　美菜子
幸泰 木村
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株式会社ニコン
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Priority to CN2009801236042A priority Critical patent/CN102067036B/zh
Priority to JP2010521732A priority patent/JP5561164B2/ja
Publication of WO2010010915A1 publication Critical patent/WO2010010915A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1469—Means for changing or stabilising the shape or form of the shaped article or deposit
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
    • C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/07—Impurity concentration specified
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2201/00—Type of glass produced
    • C03B2201/06—Doped silica-based glasses
    • C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
    • C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/32—Doped silica-based glasses containing metals containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
    • C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/06—Doped silica-based glasses
    • C03C2201/30—Doped silica-based glasses containing metals
    • C03C2201/50—Doped silica-based glasses containing metals containing alkali metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/40—Gas-phase processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/40—Gas-phase processes
    • C03C2203/42—Gas-phase processes using silicon halides as starting materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/50—After-treatment
    • C03C2203/52—Heat-treatment
    • C03C2203/54—Heat-treatment in a dopant containing atmosphere

Definitions

  • the present invention relates to a photomask substrate used for manufacturing a flat panel display (hereinafter referred to as FPD) such as a liquid crystal panel and a manufacturing method thereof.
  • FPD flat panel display
  • FPD is manufactured through a process of forming FPD elements with high accuracy on the surface of a glass substrate.
  • a photolithography technique is used. That is, a photomask having a mask pattern formed with high precision on the surface of a flat transparent substrate having excellent flatness is illuminated with exposure light, and an image of the mask pattern is displayed on a glass substrate on which a photoresist has been applied in advance. After the image is formed, a resist pattern is formed on the surface of the glass substrate by developing.
  • the size of FPD glass substrates has been increasing year by year, and accordingly, the size of photomasks used for production has also been increasing.
  • the glass substrate will be an extremely large size of 2200 mm ⁇ 2500 mm, and accordingly, the photomask used to expose the mask pattern on the glass substrate has a diagonal length exceeding 1470 mm, for example, 1220 mm ⁇ 1400 mm and the thickness is 13 mm, which is extremely large.
  • the increase in size is not limited to this, and a larger glass substrate and a photomask are required.
  • Quartz glass is known as a material used for such a photomask. Quartz glass has a coefficient of linear thermal expansion of 5 ⁇ 10 ⁇ 7 / ° C., and is a material that undergoes relatively little deformation due to heat. However, when a volume change occurs due to the influence of ultraviolet rays irradiated during exposure, it forms on the FPD substrate. Therefore, it is desirable to use a material that has very little thermal expansion. In addition, for example, ultraviolet rays having a wavelength of about 365 nm may be used at the time of exposure, and it is desired to have a high transmittance at such a short wavelength.
  • An object of the present invention is to provide a photomask substrate having a practically sufficient transmittance even in the vicinity of a wavelength of 365 nm and less likely to thermally expand than quartz glass, and a method for manufacturing the same.
  • an optical member with the addition of TiO 2 in the synthetic quartz glass the TiO 2 is contained 6.5 wt% to 3.0, wavelength 365nm transmittance of 90%
  • the optical member for photomasks as described above is provided.
  • a method for producing a photomask optical member a synthesis step of synthesizing a quartz glass ingot containing TiO 2 by mixing raw material gases, and the quartz glass ingot. Forming a flat plate-like shape by pressurizing in a state maintained at a predetermined temperature, and oxidizing titanium contained in the quartz glass by heating in an oxidizing atmosphere after the forming step. And a method of manufacturing an optical member for a photomask including an oxidation treatment step.
  • a photomask substrate having a practically sufficient transmittance such that a transmittance at a wavelength of 365 nm is 90% or more by adding 3.0 to 6.5% by weight of titania to quartz glass. Material is realized.
  • FIG. 1 Is a diagram illustrating the relationship between the transmittance and the linear thermal expansion coefficient and TiO 2 concentration of the first embodiment. These are the flowcharts which show the manufacturing process of the photomask of Embodiment 2.
  • FIG. 1 Is a diagram illustrating the relationship between the transmittance and the linear thermal expansion coefficient and TiO 2 concentration of the first embodiment.
  • the optical member of this embodiment is an optical member obtained by adding 3.0 to 6.5% by weight of TiO 2 to synthetic quartz glass (SiO 2 ), and can take any shape.
  • the optical member should not contain TiO 2 and SiO 2 substances other than is desirable.
  • elements such as Al, Cu, Fe, Na, and K are included as impurities, for example, Al is 0.1 wt.ppm or less, Cu is 0.05 wt.ppm or less, and Fe is 0.1 wt.
  • ppm or less Na is 0.05 wt ⁇ ppm or less
  • K is 0.05 wt ⁇ ppm or less.
  • a method for creating the optical member of this embodiment will be described.
  • a synthetic furnace deposits intermediate comprising a mixture of SiO 2 particles and Ti0 2 nanoparticle (soot body).
  • the soot body is an aggregate of fine particles, and a method of making the aggregate transparent by heating the aggregate to a vitrification temperature or higher in an electric heating furnace or the like can be used.
  • one synthetic furnace to synthesize fine particles of SiO 2 and Ti0 2 particles simultaneously, it creates a soot body of a mixture by mixing, clearing the soot body Can be synthesized.
  • the one synthetic furnace it is possible to use synthetic furnace having a second burner for synthesizing the first burner and the Ti0 2 particles to synthesize SiO 2 particles.
  • the first burner for synthesizing the SiO 2 fine particles includes a source gas containing a silicon compound such as silicon tetrachloride (SiCl 4 ), silicon tetrafluoride (SiF 4 ), silane (SiH 4 ), and a combustion-supporting gas (a combustion gas such as oxygen gas) and the combustible gas (hydrogen gas), is ejected and an inert gas, to produce a SiO 2 glass particles by the silicon compound to hydrolysis in a flame.
  • a source gas containing a silicon compound such as silicon tetrachloride (SiCl 4 ), silicon tetrafluoride (SiF 4 ), silane (SiH 4 ), and a combustion-supporting gas (a combustion gas such as oxygen gas) and the combustible gas (hydrogen gas)
  • the second burner is composed of a raw material gas containing a titanium compound such as titanium tetrachloride (TiCl 4 ), a combustion gas such as a combustion-supporting gas (oxygen gas) and a combustible gas (hydrogen gas), and an inert gas.
  • a raw material gas containing a titanium compound such as titanium tetrachloride (TiCl 4 )
  • a combustion gas such as a combustion-supporting gas (oxygen gas) and a combustible gas (hydrogen gas)
  • an inert gas is ejected to produce a TiO 2 glass particles by hydrolyzing a titanium compound in the flame.
  • the SiO 2 glass fine particles generated by the first burner and the TiO 2 glass fine particles generated by the second burner are deposited on a deposition target provided obliquely above the two burners. By burning the first burner and the second burner simultaneously, a mixture of SiO 2 glass particles and TiO 2 glass particles is deposited on the target.
  • the amount of TiO 2 in the composition can be changed by changing the amount ratio of SiO 2 produced by the first burner and TiO 2 produced by the second burner. For example, it can be changed by controlling the flow rate of the raw material gas introduced into the burner.
  • the soot body of the mixture thus prepared is opaque, it becomes transparent by heating to 1300 ° C. or higher.
  • a sample for measurement was prepared by cutting the transparent sample into a size of about 16 mm in diameter and 10 mm in thickness, polishing the surface of the sample, and then washing it.
  • the transmittance was measured by using a Varian ultraviolet / visible / near infrared spectrophotometer Cary5 and measuring the transmittance at 365 nm (i-line).
  • FIG. 1 shows the relationship between the concentration of TiO 2 added to the synthetic quartz glass and the linear thermal expansion coefficient, and the relationship between the concentration of TiO 2 and the transmittance at a wavelength of 365 nm.
  • the composition of each sample was investigated using a fluorescent X-ray analyzer, and the TiO 2 concentration of the composition was plotted on the horizontal axis in FIG.
  • the transmittance of the synthetic quartz glass not added with TiO 2 was 92.9%.
  • the transmittance decreased with increasing TiO 2 concentration, and decreased to 89.0% at 7.5% by weight.
  • the transmittance value shown in FIG. 1 is a value including the reflectance of a sample having a thickness of 10 mm.
  • a transmittance of 90% or more is ensured in order to expose a high-definition and high-contrast pattern. desirable.
  • the TiO 2 concentration at which the transmittance is 90% or more and the linear thermal expansion coefficient is 2.5 ⁇ 10 ⁇ 7 / ° C. or less is 3.0 to 6.5% by weight. Even within this range, when TiO 2 is 3.0 to 5.0% by weight, the transmittance is higher, and when TiO 2 is 5.0 to 6.5% by weight, the linear thermal expansion coefficient is further reduced. .
  • quartz glass to which TiO 2 was added was considered to be unusable as an optical member having a wavelength of 365 nm or less and being used for transmission because the transmittance could not be secured.
  • 3.0 to 6 that can be in the TiO 2 concentration range of .5 weight percent suppress thermal expansion less than 1/2 of the conventional quartz glass while ensuring practically sufficient transmittance was found through experimentation.
  • the quartz glass to which TiO 2 is added the larger the content of Ti 3+ in the constituent titanium element, the more the absorption, and even in the composition where the TiO 2 concentration is around 6.5% by weight, It can be expected that the internal absorption is reduced and the transmittance is improved by reducing the content of Ti 3+ .
  • the wavelength of the absorption edge tends to shift to the longer wavelength side as the TiO 2 concentration increases. For example, when used at a wavelength of 300 nm to 400 nm, the TiO 2 concentration and the Ti 3+ There is a risk that the transmittance is rapidly lowered due to variation in the content of. Also for this reason, in order to provide an optical member for a photomask having a stable and sufficient transmittance at a wavelength of 365nm, it is preferable that the TiO 2 concentration to 6.5 wt% or less.
  • the present inventor suppresses thermal expansion while ensuring sufficient transmittance by setting the content of TiO 2 within the range of 3.0 to 6.5% by weight. I was able to.
  • the inventor conducted further research and found a method capable of producing an optical member for a photomask having high transmittance.
  • Quartz glass containing TiO 2 is known to absorb more as the content of Ti 3+ in the constituent titanium elements increases, and absorption is achieved by changing Ti 3+ to Ti 4+ by oxidation. Can be reduced. Such oxidation can be performed by annealing at a temperature of about 1000 ° C. in an oxidizing atmosphere such as air. Further, absorption by Ti 3+ can be obtained with high accuracy by measuring the transmittance in the vicinity of a wavelength of 420 nm.
  • the low-expansion optical member created in Embodiment 1 is likely to exert a low-expansion effect when used for a large photomask having a diagonal dimension exceeding 1470 mm. This is because a larger photomask has a larger expansion / contraction length (expansion amount) due to thermal expansion.
  • a photomask used for projecting a pattern for FPD for example, a large-sized photomask having a size of 1220 mm ⁇ 1400 mm, a thickness of 13 mm, and a weight exceeding several tens of kg has been put into practical use. When used as a substrate, the effect of low expansion is easily exhibited.
  • a photomask substrate having such a size is manufactured by the following process.
  • quartz glass containing TiO 2 is prepared by synthesis.
  • a mixture of SiO 2 fine particles and TiO 2 fine particles is prepared in a synthesis furnace, and the resulting mixture is heated to a temperature equal to or higher than the vitrification temperature in an electric heating furnace to obtain an ingot of a photomask substrate.
  • the ingot obtained in this synthesis step is obtained while being ejected from a burner that ejects a raw material onto a deposition target.
  • the ingot is cut so that the upper surface is flat, accommodated in a carbon mold, and pressurized while heating in an inert gas atmosphere.
  • the flat quartz glass is formed by deforming.
  • the quartz glass thus formed is ground into a predetermined shape after cooling and the surface is polished to obtain a quartz glass substrate for a photomask.
  • a light shielding film made of Cr is further formed on one surface used as a mask, and the light masking film is partially removed to form a pattern to be projected, thereby completing the photomask. To do.
  • quartz glass containing a predetermined concentration of TiO 2 is synthesized (S1: synthesis step). From the result of Embodiment 1, TiO 2 is preferably contained in the quartz glass at 3.0 to 6.5 wt%.
  • a soot method or a direct method can be used.
  • silicon compound source gas, titanium compound source gas, combustion-supporting gas, and gas containing combustion gas are ejected from a multi-tube burner, reaction is performed in a flame, and glass particles are placed on a rotating target. Synthetic methods of depositing and melting can be used. SiCl 4 , SiF 4 , SiH 4, etc.
  • TiCl 4 is used as the raw material gas for the titanium compound
  • oxygen is used as the combustion-supporting gas
  • hydrogen is used as the combustion gas. it can.
  • the TiO 2 concentration can be adjusted by adjusting the mixing ratio of the silicon oxide source gas (SiCl 4 , SiF 4 , SiH 4, etc.) and the titanium compound source gas (TiCl 4, etc.).
  • SiCl 4 , SiF 4 , SiH 4, etc. silicon oxide source gas
  • TiCl 4 titanium compound source gas
  • a quartz glass ingot is obtained by further making it transparent (S2: transparency process), and an amount of quartz glass necessary for producing one photomask substrate from this ingot is obtained. cut.
  • the cut quartz glass is formed into a flat plate shape by heat and pressure molding (S3: molding step).
  • a rectangular carbon-shaped mold is prepared, quartz glass is accommodated in the space in the mold, heated to near 1600 ° C. in a nitrogen gas atmosphere, and given pressure is maintained while maintaining this temperature. Mold into a flat plate shape and cool to room temperature. Since the surface of the quartz glass after molding may have a portion that reacts with the deposits at a high temperature or bubbles, etc., each surface is ground to a size to be used as a photomask after the molding process (S4: grinding process). . In the grinding process, the thickness of the quartz glass is preferably 20 mm or less.
  • the transmittance of the flat quartz glass is measured (S5: transmittance inspection step).
  • the surface of the portion to be measured needs to be a polished surface. For example, only the vicinity of the corner of a flat plate may be polished and the transmittance of this portion measured.
  • a test piece cut out from the same quartz glass lump after molding may be created, and the measurement of the transmittance of this test piece may be used instead.
  • the transmittance can be measured using Cary 5 of Varian.
  • the wavelength to be measured is preferably around 365 nm or 420 nm, which is the wavelength of exposure light when the photomask is used in an exposure apparatus. Since the absorption by Ti 3+ is remarkable in the vicinity of the wavelength of 420 nm, it is possible to expect an accurate measurement reflecting the influence of the absorption by Ti 3+ .
  • the conditions for the next annealing process are selected.
  • the conditions of the transmittance and the annealing step it is possible to obtain the annealing conditions necessary for the oxidation by conducting a preliminary experiment and select the conditions from the measured transmittance.
  • the procedure for determining the conditions of the annealing process after performing the transmittance inspection process is set, but when the prescribed annealing conditions are set and the measured transmittance is within a predetermined range, May be processed under prescribed annealing conditions. Further, when the characteristics of the quartz glass ingot obtained in the synthesis step are stable, the next step annealing can be performed under the prescribed annealing conditions without performing the transmittance inspection.
  • oxidation processing is performed in order to reduce the internal absorption oxidizes Ti 3+ (S6: annealing step).
  • a flat quartz glass is accommodated in a heat-resistant furnace and heated while introducing an oxidizing gas (for example, air).
  • an oxidizing gas for example, air
  • it is preferable that the whole is efficiently oxidized in order to sufficiently oxidize Ti 3+ inside the flat quartz glass.
  • the grinding process for processing into a flat plate having the same thickness as that used as the photomask is performed before the annealing process, the oxidation can be efficiently performed in a short time.
  • the support member supporting the flat quartz glass in the annealing step is not in contact as much as possible.
  • the support member supporting the flat quartz glass in the annealing step it is preferable to set the temperature to 1200 ° C. or lower in order to prevent deformation of the quartz glass. After cooling to room temperature after the annealing step, the transmittance may be measured again to confirm the effect of oxidation.
  • a polishing step is performed using an abrasive such as colloidal silica (S7), and a quartz glass substrate for a photomask is completed.
  • an annealing process for removing strain may be performed between the synthesis process and the grinding process, but the ingot shape has a thickness of several hundred mm or more. Even when oxidized by heating in the inside, in order to sufficiently oxidize even Ti 3+ inside, further oxidation for a longer time is required. If the oxidation is insufficient, sufficient transmittance may not be obtained due to absorption by Ti 3+ .
  • the oxidation annealing process is performed after the molding process, the inside can be efficiently oxidized in a relatively short time. Therefore, the optical member for the photomask having a light transmittance is relatively short. Can be manufactured in time. Further, it is more preferable to perform an annealing process for oxidation treatment after a grinding process for removing unnecessary portions on the surface after the molding process.
  • the present invention is useful for a transmissive photomask optical member that transmits ultraviolet rays having a wavelength of 300 nm or more, particularly for a large photomask optical member having a diagonal dimension exceeding 1470 mm.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Glass Compositions (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
PCT/JP2009/063168 2008-07-23 2009-07-23 フォトマスク用光学部材及びその製造方法 WO2010010915A1 (ja)

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CN2009801236042A CN102067036B (zh) 2008-07-23 2009-07-23 光掩模用光学构件及其制造方法
JP2010521732A JP5561164B2 (ja) 2008-07-23 2009-07-23 フォトマスク用光学部材及びその製造方法

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US11591260B2 (en) * 2017-05-08 2023-02-28 Shin-Etsu Chemical Co., Ltd. Large-size synthetic quartz glass substrate, evaluation method, and manufacturing method

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WO2010010915A1 (ja) * 2008-07-23 2010-01-28 株式会社ニコン フォトマスク用光学部材及びその製造方法
CN102320724A (zh) * 2011-09-08 2012-01-18 北京金格兰石英玻璃有限公司 光掩膜版用方形石英玻璃基片的制备方法
KR102568807B1 (ko) * 2017-03-28 2023-08-21 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 그것을 사용한 위상 시프트 마스크의 제조 방법, 그리고 패턴 전사 방법
JP7126836B2 (ja) * 2017-03-28 2022-08-29 Hoya株式会社 位相シフトマスクブランク及びそれを用いた位相シフトマスクの製造方法、並びにパターン転写方法

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KR101606225B1 (ko) 2016-03-24
JP2014221712A (ja) 2014-11-27
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CN102067036A (zh) 2011-05-18
CN102067036B (zh) 2013-05-01

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