WO2009157208A1 - Circuit module, method for manufacturing circuit module, and portable apparatus - Google Patents

Circuit module, method for manufacturing circuit module, and portable apparatus Download PDF

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Publication number
WO2009157208A1
WO2009157208A1 PCT/JP2009/002937 JP2009002937W WO2009157208A1 WO 2009157208 A1 WO2009157208 A1 WO 2009157208A1 JP 2009002937 W JP2009002937 W JP 2009002937W WO 2009157208 A1 WO2009157208 A1 WO 2009157208A1
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WIPO (PCT)
Prior art keywords
electronic component
metal
housing member
semiconductor
metal member
Prior art date
Application number
PCT/JP2009/002937
Other languages
French (fr)
Japanese (ja)
Inventor
坂本健
今岡俊一
大塚健志
澤井徹郎
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008169238A external-priority patent/JP2010010480A/en
Priority claimed from JP2008202432A external-priority patent/JP2010040789A/en
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2009157208A1 publication Critical patent/WO2009157208A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
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    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/321—Disposition
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    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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Definitions

  • the present invention relates to a circuit module, a manufacturing method thereof, and a portable device.
  • LSI chips and electronic components are mounted on one substrate in order to realize advanced or a plurality of functions.
  • a metal cover is provided on the outer surface of an electronic component such as a crystal resonator or a SAW (Surface Acoustic Wave) filter in order to reduce leakage of electromagnetic waves to the outside.
  • a circuit module including a wiring board, a semiconductor element and a crystal unit surrounded by a metal plate arranged in parallel on the wiring board, and an insulating resin material for sealing them is known. (See Patent Document 1).
  • the metal plate functioning as an electromagnetic shield as in the above-described technique has poor adhesion to the insulating resin material that is a sealing material, which is a cause of lowering the reliability of the module.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a technique for improving the reliability of sealing of electronic parts with a sealing resin.
  • a circuit module is a housing member in which at least a part of an upper surface of a circuit board, an electronic component mounted on the circuit board, and a metal member are formed.
  • a housing member that houses the electronic component so that a space is formed between the electronic component, a plate member that is stacked on the housing member so as to cover the metal member, and a housing member and a plate And a sealing resin for sealing the shaped member.
  • the metal member on the upper surface of the housing member is covered with the plate-like member, the interface between the metal member having poor adhesion and the sealing resin is reduced. As a result, the reliability of sealing the electronic component with the sealing resin is improved.
  • the circuit module includes a board, an electronic component mounted on the board, a housing member that houses the electronic component so that a space is formed between the electronic component and the board, and the housing member is sealed. Sealing resin.
  • the housing member is at least one surface made of a metal member, and is mounted on the substrate so that the metal member and the substrate face each other.
  • the surface covered with the metal member of the surface of the housing member is in contact with the wiring board, compared with the case where the metal member is on the upper surface, between the metal member and the sealing resin The interface with poor adhesion is reduced. As a result, highly reliable sealing with respect to the electronic component and the semiconductor element by the sealing resin can be realized.
  • Still another aspect of the present invention is a method for manufacturing a circuit module.
  • This method is an electronic component and an accommodating member in which at least a part of the upper surface is made of a metal member, and accommodates the electronic component so that a space is formed between the electronic component, Including a step of laminating a plate member on a housing member so as to cover the metal member, and a step of sealing the housing member and the plate member with a sealing resin.
  • a circuit module in which the metal member on the upper surface of the housing member is covered with the plate-like member is manufactured.
  • the interface between the metal member having poor adhesion and the sealing resin is reduced, and the interface between the plate member having relatively good adhesion and the sealing resin is increased.
  • the circuit module in which the reliability of sealing the electronic component with the sealing resin is improved can be easily manufactured.
  • Still another aspect of the present invention is a portable device.
  • This portable device includes the circuit module according to any one of the above-described aspects.
  • FIG. 3A to FIG. 3C are schematic cross-sectional views for explaining the steps in the method for manufacturing the semiconductor module 10 according to the first embodiment. It is a top view which shows the structure of the semiconductor module which concerns on 2nd Embodiment. It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 2nd Embodiment. It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 3rd Embodiment. It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 4th Embodiment.
  • FIG. 12 is an X-X ′ cross-sectional view of the semiconductor module shown in FIG. 11.
  • FIG. 12A to FIG. 12C are schematic cross-sectional views showing an example of the first electronic component.
  • FIG. 14 is a top view of the first electronic component shown in FIG. 13.
  • FIG. 16 is a partial cross-sectional view of the mobile phone shown in FIG. 15.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of the semiconductor module according to the first embodiment.
  • FIG. 2 is a top view showing the configuration of the semiconductor module according to the first embodiment.
  • the semiconductor module 10 according to the first embodiment houses an element mounting substrate 12, a crystal resonator 14 mounted on the element mounting substrate 12, and the crystal resonator 14.
  • the housing member 16, the semiconductor element 18 stacked on the housing member 16, and a sealing resin 20 that seals the housing member 16 and the semiconductor element 18 are provided.
  • the housing member 16 has a metal member 16a on the top and side surfaces.
  • the accommodating member 16 accommodates the crystal resonator 14 so that a space is formed between the accommodating member 16 and the metal member 16a functions as an electromagnetic shield.
  • the semiconductor element 18 is stacked on the housing member 16 so as to cover the metal member 16 a on the upper surface of the housing member 16.
  • the metal member 16a include a member whose main component is Kovar whose main component is iron and whose surface is plated with nickel or nickel / gold to prevent oxidation.
  • a plurality of pad electrodes 12 a and 12 b constituting a part of the wiring layer are formed on the upper surface of the element mounting substrate 12.
  • a pad electrode 18 a is also formed on the upper surface of the semiconductor element 18.
  • the pad electrode 18a of the semiconductor element 18 is electrically connected to the pad electrode 12a formed on the element mounting substrate 12 by a bonding wire 22 made of a gold wire or the like.
  • the crystal resonator 14 has a plurality of bumps (projection electrode terminals) 24 formed on the lower surface opposite to the upper surface side on which the semiconductor elements 18 are stacked.
  • the pad electrode 12b of the substrate 12 is electrically connected.
  • the semiconductor element 18 is connected to the pad electrode 12 a via the bonding wire 22, thereby disposing the crystal resonator 14 as an electronic component between the semiconductor element 18 and the element mounting substrate 12. Is possible.
  • the housing member 16 that houses the crystal resonator 14 and the semiconductor element 18 are stacked, the area of the element mounting substrate 12 can be reduced.
  • the crystal resonator 14 is mounted in a state of being stacked with the semiconductor element 18, the crystal resonator 14 is placed around the periphery of the semiconductor module 10 (periphery of the semiconductor element 18) with priority given to the layout of the semiconductor element 18 as in the past. It is possible to arrange the semiconductor module 10 in the central portion as compared with the case where the semiconductor module 10 is arranged. For this reason, the interval (shortest interval portion) between the crystal unit 14 and the outer wall side surface of the sealing resin 20 becomes longer, and therefore leakage of signals (electromagnetic noise) from the crystal unit 14 to the outside of the semiconductor module 10 is reduced.
  • the metal member 16a tends to have poor adhesion to the sealing resin due to the influence of an oxide film or the like generated on the metal surface.
  • the metal member 16a on the upper surface of the housing member 16 is formed by the semiconductor element 18. Therefore, the interface between the metal member 16a having poor adhesion and the sealing resin 20 is reduced, and the interface between the semiconductor element 18 having relatively good adhesion and the sealing resin 20 is increased. As a result, the sealing reliability of the electronic component (the crystal resonator 14 covered with the housing member 16 in the present embodiment) and the semiconductor element 18 stacked thereon is improved by the sealing resin 20.
  • the semiconductor element 18 according to the present embodiment is larger than the area of the upper surface of the housing member 16, it covers the entire upper surface of the housing member 16, in other words, covers the entire upper surface of the metal member 16a. Are stacked. Therefore, the upper surface of the metal member 16a does not contact the sealing resin 20, and the influence of the adhesion between the metal member 16a and the sealing resin 20 is reduced.
  • the semiconductor element 18 is made of a material having a higher adhesiveness with the sealing resin 20 than the adhesiveness between the sealing resin 20 and the metal member 16a, for example, a dielectric protective film made of polyimide resin. It is formed on almost the entire surface excluding 18a.
  • the sealing performance by the sealing resin 20 is improved and the reliability of the semiconductor module 10 is improved as compared with the case where the metal member 16 a on the upper surface of the housing member 16 is directly sealed by the sealing resin 20.
  • the adhesion can be grasped as, for example, the magnitude of adhesive strength or a force necessary to peel the sealing resin from the semiconductor element or the housing member by a predetermined method.
  • a movable component (a component having a movable portion) including the crystal resonator 14 can be employed.
  • a SAW (Surface Acoustic Wave) filter can be used.
  • the semiconductor module 10 including electronic parts such as the crystal resonator 14 and the SAW filter that operate and vibrate at a high frequency, electromagnetic noise from the outside or the outside can be sufficiently suppressed. .
  • one of the pad electrodes 12b in the element mounting substrate 12 is electrically connected to a ground terminal (not shown) so that a fixed potential is inputted, and one of the pad electrodes 12b and the metal member 16a are not shown. Connected by. Thereby, electromagnetic noise is further suppressed.
  • FIG. 3A to FIG. 3C are schematic cross-sectional views for explaining the steps in the method for manufacturing the semiconductor module 10 according to the first embodiment.
  • the crystal resonator 14 and the housing member 16 are mounted on the element mounting substrate 12 on which the pad electrodes 12a and 12b are formed.
  • the accommodating member 16 is mounted on the pad electrode 12b via solder in a state where the crystal resonator 14 is accommodated so that a space is formed between the accommodating member 16 and the crystal resonator 14.
  • the solder becomes the bumps 24, and the crystal resonator 14 and the housing member 16 are fixed to the element mounting substrate 12.
  • the crystal resonator 14 which is one of the electronic components is hermetically sealed and accommodated in the accommodating member 16, and the space inside the accommodating member 16 is maintained in a vacuum state or a state filled with an inert gas. Has been. Thus, the reliability of the electronic component is improved by hermetically sealing the inside of the housing member 16.
  • a semiconductor element 18 is laminated on the housing member 16 via an adhesive (not shown) so as to cover the entire upper surface of the metal member 16a.
  • the adhesive include a film-like semiconductor mounting adhesive member in which conductive particles such as silver and copper are fixed in a resin such as epoxy. By performing the heat treatment in this state, the adhesive is cured, and the semiconductor element 18 is fixed on the housing member 16.
  • the pad electrode 18a of the semiconductor element 18 and the pad electrode 12a of the element mounting substrate 12 are connected by the bonding wire 22, and the housing member 16 and the semiconductor element 18 are sealed by the sealing resin 20. And seal.
  • the semiconductor module 10 in which the metal member 16a on the upper surface of the housing member 16 is covered with the semiconductor element 18 is manufactured by such a manufacturing method.
  • the interface between the metal member 16 a having poor adhesion and the sealing resin 20 is reduced, and the interface between the semiconductor element 18 having relatively good adhesion and the sealing resin 20 is increased.
  • the semiconductor module 10 in which the reliability of sealing the crystal resonator 14 and the semiconductor element 18 with the sealing resin 20 is improved can be easily manufactured.
  • FIG. 4 is a top view showing the configuration of the semiconductor module according to the second embodiment.
  • FIG. 5 is a schematic cross-sectional view showing the configuration of the semiconductor module shown in FIG. 4, and corresponds to a cross section taken along line XX in FIG.
  • the semiconductor module 110 according to the second embodiment includes a housing member 116 that houses a first semiconductor element 126, a second semiconductor element 118, and a crystal resonator 114 as an electronic component on an element mounting substrate 112. It is installed.
  • the housing member 116 has a metal member 116a on the top and side surfaces.
  • the accommodating member 116 accommodates the crystal resonator 114 so that a space is formed between the accommodating member 116 and the metal member 116a functions as an electromagnetic shield.
  • the second semiconductor element 118 and the housing member 116 are stacked in the same manner as in the first embodiment.
  • the semiconductor module 110 is sealed with a sealing resin 120.
  • the semiconductor module 110 has a plurality of electronic components 128 mounted in addition to the crystal resonator. Examples of the electronic component 128 include a capacitor, a resistor, and an inductor.
  • a plurality of pad electrodes 112a and 112b constituting a part of the wiring layer are formed on the upper surface of the element mounting substrate 112.
  • a pad electrode 118 a is also formed on the upper surface of the second semiconductor element 118.
  • the pad electrode 118a of the second semiconductor element 118 is electrically connected to the pad electrode 112a formed on the element mounting substrate 112 by a bonding wire 122 made of a gold wire or the like.
  • a plurality of bumps 124 are formed on the lower surface opposite to the upper surface side on which the second semiconductor element 118 is laminated, and the element mounting substrate 112 is interposed via the bumps 124.
  • the pad electrode 112b is electrically connected.
  • the second semiconductor element 118 is connected to the pad electrode 112a via the bonding wire 122, so that the crystal vibration as an electronic component is provided between the second semiconductor element 118 and the element mounting substrate 112.
  • the child 114 can be arranged.
  • the first semiconductor element 126 has a plurality of bumps 124 arranged in an array on the lower surface, and is electrically connected to the pad electrode 112b formed on the element mounting substrate 112 via the bumps 124. It is connected. Even in such a semiconductor module 110, the same effect as in the first embodiment can be obtained. Furthermore, since electromagnetic noise to the first semiconductor element 126 and the electronic component 128 is suppressed, the reliability of the semiconductor module 110 can be improved.
  • the semiconductor element covers the entire surface of the metal member constituting the upper surface of the housing member.
  • a part of the metal member is a semiconductor element. The case where it is covered with will be described. Note that description of the same configuration as that of the first embodiment is omitted as appropriate.
  • FIG. 6 is a schematic cross-sectional view showing the configuration of the semiconductor module according to the third embodiment.
  • the semiconductor module 210 according to the third embodiment accommodates the element mounting substrate 212, the crystal resonator 214 mounted on the element mounting substrate 212, and the crystal resonator 214.
  • the housing member 216, a semiconductor element 218 stacked on the housing member 216, and a sealing resin 220 that seals the housing member 216 and the semiconductor element 218 are provided.
  • the housing member 216 has a part of the upper surface made of a metal member 216a.
  • the accommodating member 216 accommodates the crystal resonator 214 so that a space is formed between the accommodating member 216 and the metal member 216a functions as an electromagnetic shield.
  • the semiconductor element 218 is stacked on the housing member 216 so as to cover a part of the metal member 216 a of the housing member 216.
  • the housing member 216 for housing the crystal oscillator 214 and the semiconductor element 218 are laminated, the area of the element mounting substrate 212 can be reduced. Further, since the crystal resonator 214 is mounted so as to be stacked with the semiconductor element 218, it can be disposed at the center of the semiconductor module 210. Therefore, signal leakage (electromagnetic noise) from the crystal unit 214 to the outside of the semiconductor module 210 is reduced.
  • the semiconductor module 210 since a part of the metal member 216a on the upper surface of the housing member 216 is covered with the semiconductor element 218, the interface between the metal member 216a having poor adhesion and the sealing resin 220 is reduced. The interface between the semiconductor element 218 having relatively good adhesion and the sealing resin 220 is increasing. As a result, the sealing reliability of the crystal resonator 214 by the sealing resin 220 and the semiconductor element 218 stacked thereon is improved.
  • the semiconductor module according to the present embodiment is characterized in that the adhesion with the sealing resin is improved by using a dummy member instead of the semiconductor element to cover the metal member of the housing member that houses the electronic component.
  • a dummy member instead of the semiconductor element to cover the metal member of the housing member that houses the electronic component.
  • FIG. 7 is a schematic cross-sectional view showing the configuration of the semiconductor module according to the fourth embodiment.
  • a semiconductor module 310 according to the fourth embodiment houses an element mounting substrate 312, a crystal resonator 314 mounted on the element mounting substrate 312, and the crystal resonator 314.
  • the housing member 316 has a metal member 316a on the top and side surfaces.
  • the accommodating member 316 accommodates the crystal resonator 314 so that a space is formed between the accommodating member 316 and the metal member 316a functions as an electromagnetic shield.
  • the dummy member 317 is stacked on the housing member 316 so as to cover the metal member 316a of the housing member 316.
  • the dummy member 317 is made of a dielectric sheet made of a material having high adhesion to the sealing resin 320, for example, a polyimide resin.
  • the semiconductor element 318 has a plurality of bumps (projection electrode terminals) 322 arranged in an array on the lower surface, and is electrically connected to a pad electrode 312 a formed on the element mounting substrate 312 via the bumps 322. It is connected. Even in such a semiconductor module 310, the same effect as in the first embodiment can be obtained.
  • each semiconductor module described above The reliability of the semiconductor module is improved by reducing the interface region with poor adhesion between the housing member that houses the electronic component and the sealing resin.
  • an electronic component having a large size such as a crystal resonator
  • the crystal unit can be disposed near the center of the semiconductor module, and in other words, the leakage of the signal from the crystal unit to the outside of the semiconductor module, in other words Electromagnetic noise is reduced.
  • FIG. 8 is a schematic diagram for explaining the frequency fluctuation of the crystal resonator due to the resin injection pressure.
  • An electronic component 414 illustrated in FIG. 8 includes a crystal resonator 402 serving as an element portion, and a housing member 404 that houses the crystal resonator 402 so that a space is formed between the crystal resonator 402.
  • the housing member 404 includes a container 404a made of a ceramic substrate, and a metal sealing plate 404b as a lid that covers the crystal resonator 402 fixed to the upper part of the container 404a so as to seal it. Further, on the lower surface of the container 404a, a metal terminal 414b that is electrically connected to the crystal unit 402 and a metal terminal 414c that is electrically connected to the metal sealing plate 404b are provided.
  • the circuit module according to the present embodiment has an upper surface of the housing member that covers the metal member in order to prevent the metal member of the housing member that houses the electronic component from being bent by the resin injection pressure at the time of sealing.
  • One of the features is that the plate-like members are laminated on each other.
  • FIG. 9 is a schematic cross-sectional view showing the configuration of the circuit module according to the fifth embodiment.
  • a circuit module 510 according to the fifth embodiment houses an element mounting substrate 512, a crystal resonator 514 mounted on the element mounting substrate 512, and the crystal resonator 514.
  • the housing member 516, a plate member 517 stacked on the housing member 516, and a sealing resin 520 that seals the housing member 516 and the plate member 517 are provided.
  • the housing member 516 has a metal member 516a on the top and side surfaces.
  • the accommodating member 516 accommodates the crystal resonator 514 so that a space is formed between the accommodating member 516 and the metal member 516a functions as an electromagnetic shield.
  • the plate-like member 517 is laminated on the housing member 516 so as to cover the metal member 516 a of the housing member 516.
  • the plate-like member 517 has rigidity enough to prevent the metal member 516a from being bent. Examples of such a plate-like member 517 include a material such as silicon or ceramic having a sufficiently small thermal expansion coefficient and higher rigidity than the sealing resin 520.
  • a plate-like member 517 made of a silicon piece having a thickness of 150 ⁇ m is fixed to the surface of the metal member 516a via an adhesive member DAF (Die attach film).
  • DAF Die attach film
  • the bending of the metal member is suppressed by the action of the plate-like member 517 having higher rigidity than the metal member 516a.
  • the generation of internal stress in the crystal unit is suppressed, and the offset of the oscillation frequency of the crystal unit is reduced.
  • materials such as silicon and ceramic have at least better adhesion to the sealing resin than metal materials, the metal member 516a and the sealing resin 520 as described in each of the above embodiments are used. It is also preferable from the viewpoint of improving the adhesion.
  • the shape and thickness of the plate member 517 are not particularly limited as long as the bending of the metal member 516a can be suppressed to some extent.
  • the plate-like member 517 may have a size that can cover more than half of the surface of the metal member 516a.
  • the size of the accommodating member 516 area occupied on the surface of the element mounting substrate
  • the size of the crystal resonator 514 is about 1 which is about 70% of the accommodating member 516.
  • the plate-like member 517 preferably has an area equal to or larger than that of the crystal resonator 514.
  • the size of the plate-like member 517 may be larger than that of the metal member 516a.
  • the plate-like member is employed in the configuration of the circuit module in which only the electronic component is sealed has been described.
  • the semiconductor element and the electronic component are juxtaposed. It can also be employed in the configuration of a semiconductor module.
  • FIG. 10 is a top view showing the configuration of the semiconductor module according to the sixth embodiment.
  • FIG. 11 is a cross-sectional view of the semiconductor module shown in FIG. 10 taken along the line XX ′.
  • a semiconductor module 1010 according to the sixth embodiment includes a semiconductor element 1012, a first electronic component 1014, a plurality of second electronic components 1016, an element mounting substrate 1018, and a sealing resin 1020.
  • the semiconductor element 1012 is a component that uses a semiconductor material as a main raw material and functions as an active element such as a transistor, a thyristor, or a diode.
  • the first electronic component 1014 is an electronic component in which an element portion is formed in an internal space, and is a component that functions as, for example, a crystal resonator.
  • the lower surface of the first electronic component 1014 is composed of a metal member 1014a, and the metal member 1014a functions as an electromagnetic shield.
  • the second electronic component 1016 is a component other than the crystal unit, and includes, for example, a capacitor, a resistor, an inductor, and the like.
  • the element mounting substrate 1018 is provided with a wiring layer 1022 and a semiconductor element 1012, a first electronic component 1014, and a plurality of second electronic components 1016.
  • the sealing resin 1020 seals the semiconductor element 1012, the first electronic component 1014, and the plurality of second electronic components 1016.
  • the first electronic component 1014 is mounted on the element mounting substrate 1018 with the surface on which the metal member 1014a is formed as the lower surface.
  • a plurality of pad electrodes 1018a constituting a part of the wiring layer are formed on the upper surface of the element mounting substrate 1018.
  • a pad electrode 1012 a is also formed on the upper surface of the semiconductor element 1012.
  • the pad electrode 1012a of the semiconductor element 1012 is electrically connected to the pad electrode 1018a formed on the element mounting substrate 1018 by a bonding wire 1024 made of a gold wire or the like.
  • the first electronic component 1014 has a metal terminal 1014b on the upper surface side opposite to the surface on which the metal member 1014a is formed.
  • a pad electrode 1018b constituting a part of the signal line 1022a of the wiring layer 1022 is formed on the upper surface of the element mounting substrate 1018, and the pad electrode 1018b and the metal terminal 1014b are connected by a bonding wire 1026.
  • the metal member 1014a and the metal terminal 1014b tend to have poor adhesion to the sealing resin due to the influence of an oxide film generated on the metal surface.
  • the metal terminal 1014b provided on the upper surface side in contact with the sealing resin 1020 in the surface of the first electronic component 1014 has a land shape instead of the entire surface. The area is smaller than that of the metal member 1014a on the lower surface side of the first electronic component 1014.
  • the metal member 1014a having a larger area than the metal terminal 1014b in the surface of the first electronic component 1014 is in contact with the element mounting substrate 1018, and thus the adhesion between the metal member 1014a and the sealing resin 1020. The area of the poor interface is reduced.
  • the interface with poor adhesion between the metal member 1014a and the metal terminal 1014b and the sealing resin 1020 is reduced as a whole, and problems such as peeling and cracking occur. By being reduced, the reliability of sealing of electronic components and semiconductor elements by the sealing resin 1020 is improved.
  • the metal member 1014a is fixed to a metal land 1018c formed on the upper surface of the element mounting substrate 1018 by solder or silver paste (not shown). As a result, the first electronic component 1014 can be firmly fixed to the element mounting substrate 1018.
  • the metal land 1018c is electrically connected to a ground terminal (not shown) so that a fixed potential (for example, ground potential) is input in the wiring layer 1022, and is connected to the metal member. 1014a functions as an electromagnetic shield. Therefore, the signal line 1022a that is electrically connected to the semiconductor element 1012 via the lower side of the metal member 1014a is less likely to be affected by electromagnetic noise generated by the first electronic component 1014 due to the metal member 1014a that functions as an electromagnetic shield. The operational reliability of the semiconductor module is improved.
  • the metal member 1014a conductive with the ground terminal, it is possible to reduce the metal terminals of the first electronic component 1014 that are conventionally provided for connection with the ground terminal, and the interface between the metal and the sealing resin. Can be further reduced.
  • the above-described signal line 1022a is not necessarily one that conducts the first electronic component 1014 and the semiconductor element 1012, but an external connection terminal (not shown) provided on the back side of the element mounting substrate 1018 and the semiconductor.
  • the element 1012 may be electrically connected.
  • the metal terminal 1014b of the first electronic component 1014 according to the present embodiment is located above and away from the element mounting substrate 1018. Therefore, there is no generation of unintended capacitance with the metal pattern existing in the wiring layer 1022 of the element mounting substrate 1018.
  • the first electronic component 1014 is a crystal resonator, it is possible to prevent problems in oscillation operation such as oscillation stop and frequency variation due to variation in load capacitance, and the operation reliability of the semiconductor module is improved.
  • FIGS. 12A to 12C are schematic cross-sectional views showing an example of an electronic component corresponding to the first electronic component 1014 described above.
  • the metal member of the electronic component is on the upper side, but when mounted on the element mounting substrate 1018, the surface of the metal member becomes the lower surface.
  • a first electronic component 1114 shown in FIG. 12A has a housing member 1104 for housing the crystal resonator 1102 so that a space is formed between the crystal resonator 1102 as an element portion and the crystal resonator 1102. And having.
  • the housing member 1104 includes a container 1104a made of a ceramic substrate, and a metal sealing plate 1104b as a lid that covers the crystal resonator 1102 fixed to the upper part of the container 1104a so as to seal it. Further, a metal terminal 1114b that is electrically connected to the crystal resonator 1102 and a metal terminal 1114c that is electrically connected to the metal sealing plate 1104b are provided on the lower surface of the container 1104a.
  • the first electronic component 1114 configured as described above is mounted on an element mounting substrate 1018 as shown in FIG. 11 with the metal sealing plate 1104b as the lower surface.
  • the first electronic component 1214 shown in FIG. 12B includes a crystal resonator 1202 so that a space is formed between the crystal resonator 1202 and the semiconductor integrated circuit 1203 as element portions and the crystal resonator 1202.
  • the housing member 1204 includes a container 1204a and a metal sealing plate 1204b that covers the crystal resonator 1202 fixed to the upper part of the container 1204a so as to seal it.
  • a metal terminal 1214c that is electrically connected to the metal sealing plate 1204b and a metal terminal 1214b that is electrically connected to the semiconductor integrated circuit 1203 are provided on the lower surface of the container 1204a.
  • the first electronic component 1214 configured as described above is mounted on an element mounting substrate 1018 as shown in FIG. 11 with the metal sealing plate 1204b as the bottom surface.
  • a first electronic component 1314 shown in FIG. 12C includes a SAW filter 1302 serving as an element portion and a housing member 1304 that houses the SAW filter 1302 so that a space is formed between the SAW filter 1302.
  • the housing member 1304 includes a container 1304a and a metal sealing plate 1304b that covers the SAW filter 1302 fixed to the top of the container 1304a so as to seal the container 1304a. Further, on the lower surface of the container 1304a, a metal terminal 1314c electrically connected to the metal sealing plate 1304b and a metal terminal 1314b electrically connected to the SAW filter 1302 are provided.
  • the first electronic component 1314 thus configured is mounted on an element mounting substrate 1018 as shown in FIG. 11 with the metal sealing plate 1304b as the bottom surface.
  • Each electronic component described above is hermetically sealed with a quartz sealing plate or a SAW filter inside a vacuum or an inert gas by a metal sealing plate.
  • a suitable material for the metal sealing plate for example, Kovar mainly composed of iron is used as a base material, and the surface is subjected to plating treatment of nickel or nickel / gold to prevent corrosion (oxidation). Materials.
  • a movable component such as a crystal resonator or a SAW filter can be used.
  • a semiconductor module including electronic components such as a crystal resonator and a SAW filter that operate and vibrate at a high frequency, electromagnetic noise to the signal line in the wiring layer of the element mounting substrate 1018 is reduced. It can be suppressed sufficiently.
  • the first electronic component is characterized by the shape of the surface on which the metal terminal of the housing member is formed.
  • FIG. 13 is a schematic cross-sectional view of the vicinity of the first electronic component in the semiconductor module according to the seventh embodiment.
  • FIG. 14 is a top view of the first electronic component shown in FIG. Note that, in the semiconductor module according to the present embodiment, the semiconductor element has the same configuration as that of the sixth embodiment, so that the drawing is omitted.
  • the semiconductor module 1410 includes a semiconductor element (not shown), a first electronic component 1414, an element mounting board 1418, and a sealing resin 1420.
  • the first electronic component 1414 is, for example, a component that functions as a crystal resonator.
  • the lower surface of the first electronic component 1414 is composed of a metal member 1414a, and this metal member 1414a functions as an electromagnetic shield.
  • the element mounting substrate 1418 has a wiring layer (not shown) and a semiconductor element and the first electronic component 1414 mounted thereon.
  • the sealing resin 1420 seals the semiconductor element and the first electronic component 1414.
  • the first electronic component 1414 is mounted on the element mounting substrate 1418 with the surface on which the metal member 1414a is formed as the lower surface.
  • the metal member 1414a is fixed to the metal land 1418c formed on the upper surface of the element mounting substrate 1418 by the solder 1424. As a result, the first electronic component 1414 can be firmly fixed to the element mounting substrate 1418.
  • a metal terminal 1414b is provided on the surface of the housing member 1404 constituting the surface opposite to the surface on which the metal member 1414a is formed.
  • a pad electrode 1418b is formed on the upper surface of the element mounting substrate 1418, and the pad electrode 1418b and the metal terminal 1414b are connected by a bonding wire 1426.
  • the housing member 1404 has a substantially rectangular bottom surface, and has a notch 1404b formed so as to obliquely cut out the apexes 1404a of the four corners.
  • the housing member 1404 is made of a dielectric material such as ceramic, the loop shape of the bonding wire 1426 can be made compact by forming the notch 1404b in the peripheral portion of the upper surface of the housing member 1404 in this way. This makes it possible to reduce the height and reduce the mounting area.
  • the metal terminal 1414b has an inclined surface 1414b1 shaped so as to cover the corner of the housing member 1404 along the notch 1404b.
  • the metal terminal 1414b is formed with a slope 1414b1 so as to extend to the notch 1404b. Therefore, when the bonding wire 1426 is brought into contact with the inclined surface 1414b1, the metal terminal 1414b and the bonding wire 1426 are conducted not only on the upper surface of the metal terminal 1414b but also on the inclined surface 1414b1, thereby improving connection reliability. To do.
  • the bonding wire 1426 is normally connected in order from the metal terminal 1414b side to the pad electrode 1418b side so as not to contact the peripheral edge portion of the first electronic component 1414.
  • the bonding wire 1426 since the bonding wire 1426 may be brought into contact with the peripheral edge of the first electronic component 1414, it is possible to connect in order from the pad electrode 1418b side to the metal terminal 1414b side. It becomes. For this reason, it is possible to further reduce the height and reduce the mounting area.
  • an external force for example, resin sealing pressure in the transfer molding method
  • the electronic components are mounted upside down so that the metal sealing plate is in contact with the element mounting substrate.
  • the bending of the sealing plate is suppressed. That is, the deformation of the housing member due to the bending of the metal sealing plate, and hence the generation of internal stress in the crystal resonator housed inside the housing member is suppressed.
  • changes in the performance of the electronic component due to internal stress are suppressed.
  • the electronic component is a crystal resonator, the offset of the oscillation frequency of the crystal resonator is reduced.
  • a portable device including the semiconductor module according to each of the above embodiments will be described.
  • electronic devices such as a personal digital assistant (PDA), a digital video camera (DVC), and a digital still camera (DSC), may be sufficient, for example.
  • PDA personal digital assistant
  • DVC digital video camera
  • DSC digital still camera
  • FIG. 15 is a diagram illustrating a configuration of a mobile phone including the semiconductor module and the circuit module according to each of the above-described embodiments.
  • the mobile phone 600 has a structure in which a first housing 602 and a second housing 604 are connected by a movable portion 606.
  • the first housing 602 and the second housing 604 can rotate around the movable portion 606.
  • the first housing 602 is provided with a display portion 608 and a speaker portion 610 that display information such as characters and images.
  • the second housing 604 is provided with an operation unit 612 such as operation buttons and a microphone unit 614. Note that the semiconductor modules and circuit modules according to the above-described embodiments are mounted inside such a mobile phone 600.
  • FIG. 16 is a partial cross-sectional view (cross-sectional view of the first housing 602) of the mobile phone shown in FIG.
  • the semiconductor module 10 according to each of the above-described embodiments is mounted on the printed circuit board 618 via the solder bumps 616 provided on the back side thereof, and is electrically connected to the display unit 608 and the like via the printed circuit board 618. It is connected to the.
  • a heat radiating substrate 620 such as a metal substrate is provided on the back surface side (the surface opposite to the solder bump 616) of the semiconductor module 10, and for example, heat generated from the semiconductor module is collected inside the first housing 602. It is possible to efficiently dissipate heat to the outside of the first housing 602 without making it.
  • the electronic component includes a metal member that covers a lower surface of the electronic component between the electronic component and the wiring board.
  • the electronic component has a metal terminal on a surface opposite to the metal member, and a portion constituting the signal line in the wiring layer and the metal terminal are connected by a bonding wire.
  • the electronic component has a notch at the peripheral edge of the upper surface thereof, and the metal terminal extends to the notch and the extended portion is in contact with the bonding wire.
  • the semiconductor module according to (2) which is characterized.
  • module. The semiconductor module according to any one of (1) to (5), wherein the metal member is electrically connected to a portion of the wiring layer to which a fixed potential is input.
  • a portable device comprising the semiconductor module according to any one of (1) to (6).
  • the present invention has been described with reference to the above-described embodiments.
  • the present invention is not limited to the above-described embodiments, and the configurations of the embodiments are appropriately combined or replaced. Those are also included in the present invention.
  • the order of the manufacturing method of the semiconductor module in each embodiment is appropriately changed, and various design changes and the like in the element mounting substrate and the semiconductor module are modified with respect to each embodiment. Embodiments to which such modifications are added can also be included in the scope of the present invention.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Oscillators With Electromechanical Resonators (AREA)

Abstract

A semiconductor module (10) is provided with: an element mounting substrate (12); a crystal oscillator (14) mounted on the element mounting substrate (12); a storing member (16) which has at least a part of the upper surface composed of a metal member (16a), and stores a crystal oscillator (14) on the element mounting substrate (12) such that a space is formed between the element mounting substrate and the crystal oscillator (14); a semiconductor element (18) stacked on the storing member (16) such that the metal member (16) is covered; and a sealing resin (20) which seals the storing member (16) and the semiconductor element (18).

Description

回路モジュールおよびその製造方法、ならびに携帯機器Circuit module, method for manufacturing the same, and portable device
　本発明は、回路モジュールおよびその製造方法、ならびに携帯機器に関する。 The present invention relates to a circuit module, a manufacturing method thereof, and a portable device.
　近年、半導体素子を用いた電子機器が様々な分野で開発されており、その用途や機能も多岐にわたっている。そのため、高度な又は複数の機能を実現するために一つの基板上に複数のＬＳＩチップや電子部品を搭載することが行われている。また、水晶振動子やＳＡＷ（Surface Acoustic Wave）フィルタ等の電子部品の外表面には、外部への電磁波の漏洩を低減するために、金属製のカバーが設けられている。 In recent years, electronic devices using semiconductor elements have been developed in various fields, and their uses and functions are diverse. Therefore, a plurality of LSI chips and electronic components are mounted on one substrate in order to realize advanced or a plurality of functions. In addition, a metal cover is provided on the outer surface of an electronic component such as a crystal resonator or a SAW (Surface Acoustic Wave) filter in order to reduce leakage of electromagnetic waves to the outside.
　このようなモジュールとして、配線基板と、配線基板に並設される半導体素子及び金属板で囲われた水晶振動子と、これらを封止する絶縁性樹脂材と、を備えた回路モジュールが知られている（特許文献１参照）。 As such a module, a circuit module including a wiring board, a semiconductor element and a crystal unit surrounded by a metal plate arranged in parallel on the wiring board, and an insulating resin material for sealing them is known. (See Patent Document 1).
　また、電子機器の小型化の要請により、基板サイズの小型化も求められている。このような要請に対して、回路基板の上面にＩＣを搭載するとともに、回路基板の裏面に設けられた空間に水晶振動子チップを収容することで小型化を図った高周波モジュールが知られている（特許文献２参照）。 Also, due to the demand for downsizing of electronic devices, downsizing of the substrate size is also required. In response to such a demand, there is known a high-frequency module that is miniaturized by mounting an IC on the upper surface of a circuit board and accommodating a crystal resonator chip in a space provided on the back surface of the circuit board. (See Patent Document 2).
特開２００７－２９４８２８号公報JP 2007-294828 A 特開２００６－４１９３０号公報JP 2006-41930 A
　ところで、前述の技術のように電磁シールドとして機能する金属板は、封止材である絶縁樹脂材との密着性が悪く、モジュールの信頼性を低下させる一因となっている。 By the way, the metal plate functioning as an electromagnetic shield as in the above-described technique has poor adhesion to the insulating resin material that is a sealing material, which is a cause of lowering the reliability of the module.
　本発明はこうした状況に鑑みてなされたものであり、その目的とするところは、封止樹脂による電子部品の封止の信頼性を向上させる技術を提供することにある。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a technique for improving the reliability of sealing of electronic parts with a sealing resin.
　上記課題を解決するために、本発明のある態様の回路モジュールは、基板と、基板上に搭載された電子部品と、上面の少なくとも一部が金属部材で構成されている収容部材であって、基板上において、電子部品との間に空間が形成されるように該電子部品を収容する収容部材と、金属部材を覆うように収容部材の上に積層された板状部材と、収容部材および板状部材を封止する封止樹脂と、を備える。 In order to solve the above problems, a circuit module according to an aspect of the present invention is a housing member in which at least a part of an upper surface of a circuit board, an electronic component mounted on the circuit board, and a metal member are formed. On the substrate, a housing member that houses the electronic component so that a space is formed between the electronic component, a plate member that is stacked on the housing member so as to cover the metal member, and a housing member and a plate And a sealing resin for sealing the shaped member.
　この態様によると、収容部材の上面にある金属部材が板状部材で覆われているため、密着性の悪い金属部材と封止樹脂との界面が減少する。その結果、封止樹脂による電子部品の封止の信頼性が向上する。 According to this aspect, since the metal member on the upper surface of the housing member is covered with the plate-like member, the interface between the metal member having poor adhesion and the sealing resin is reduced. As a result, the reliability of sealing the electronic component with the sealing resin is improved.
　本発明の別の態様も、回路モジュールである。この回路モジュールは、基板と、基板上に搭載された電子部品と、基板上において、電子部品との間に空間が形成されるように該電子部品を収容する収容部材と、収容部材を封止する封止樹脂と、を備える。収容部材は、少なくとも一面が金属部材で構成され、該金属部材と基板とが対向するように該基板に搭載されている。 Another aspect of the present invention is also a circuit module. The circuit module includes a board, an electronic component mounted on the board, a housing member that houses the electronic component so that a space is formed between the electronic component and the board, and the housing member is sealed. Sealing resin. The housing member is at least one surface made of a metal member, and is mounted on the substrate so that the metal member and the substrate face each other.
　この態様によると、収容部材の表面のうち金属部材で覆われている面が配線基板と接しているため、金属部材が上面にある場合と比較して、金属部材と封止樹脂との間の密着性の悪い界面が減少する。その結果、封止樹脂による電子部品や半導体素子に対する信頼性の高い封止を実現することができる。 According to this aspect, since the surface covered with the metal member of the surface of the housing member is in contact with the wiring board, compared with the case where the metal member is on the upper surface, between the metal member and the sealing resin The interface with poor adhesion is reduced. As a result, highly reliable sealing with respect to the electronic component and the semiconductor element by the sealing resin can be realized.
　本発明のさらに別の態様は、回路モジュールの製造方法である。この方法は、電子部品と、上面の少なくとも一部が金属部材で構成されている収容部材であって、電子部品との間に空間が形成されるように該電子部品を収容する収容部材と、を基板の上に搭載する工程と、金属部材を覆うように収容部材の上に板状部材を積層する工程と、収容部材と板状部材を封止樹脂で封止する工程と、を備える。 Still another aspect of the present invention is a method for manufacturing a circuit module. This method is an electronic component and an accommodating member in which at least a part of the upper surface is made of a metal member, and accommodates the electronic component so that a space is formed between the electronic component, Including a step of laminating a plate member on a housing member so as to cover the metal member, and a step of sealing the housing member and the plate member with a sealing resin.
　この態様によると、収容部材の上面にある金属部材が板状部材で覆われた回路モジュールが製造される。このような回路モジュールは、密着性の悪い金属部材と封止樹脂との界面が減少し、比較的密着性の良い板状部材と封止樹脂との界面が増加している。これにより、封止樹脂による電子部品の封止の信頼性が向上した回路モジュールを簡便に製造することができる。 According to this aspect, a circuit module in which the metal member on the upper surface of the housing member is covered with the plate-like member is manufactured. In such a circuit module, the interface between the metal member having poor adhesion and the sealing resin is reduced, and the interface between the plate member having relatively good adhesion and the sealing resin is increased. Thereby, the circuit module in which the reliability of sealing the electronic component with the sealing resin is improved can be easily manufactured.
　本発明のさらに別の態様は、携帯機器である。この携帯機器は、上述したいずれかの態様の回路モジュールを搭載している。 Still another aspect of the present invention is a portable device. This portable device includes the circuit module according to any one of the above-described aspects.
　本発明によれば、封止樹脂による電子部品や半導体素子の封止の信頼性を向上させることができる。 According to the present invention, it is possible to improve the reliability of sealing of electronic parts and semiconductor elements by a sealing resin.
第１の実施の形態に係る半導体モジュールの構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 1st Embodiment. 第１の実施の形態に係る半導体モジュールの構成を示す上面図である。It is a top view which shows the structure of the semiconductor module which concerns on 1st Embodiment. 図３（ａ）～図３（ｃ）は、第１の実施の形態に係る半導体モジュール１０の製造方法における工程を説明するための概略断面図である。FIG. 3A to FIG. 3C are schematic cross-sectional views for explaining the steps in the method for manufacturing the semiconductor module 10 according to the first embodiment. 第２の実施の形態に係る半導体モジュールの構成を示す上面図である。It is a top view which shows the structure of the semiconductor module which concerns on 2nd Embodiment. 第２の実施の形態に係る半導体モジュールの構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 2nd Embodiment. 第３の実施の形態に係る半導体モジュールの構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 3rd Embodiment. 第４の実施の形態に係る半導体モジュールの構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the semiconductor module which concerns on 4th Embodiment. 樹脂注入圧による水晶振動子の周波数振動を説明するための模式図である。It is a schematic diagram for demonstrating the frequency vibration of the crystal oscillator by resin injection pressure. 第５の実施の形態に係る回路モジュールの構成を示す概略断面図である。It is a schematic sectional drawing which shows the structure of the circuit module which concerns on 5th Embodiment. 第６の実施の形態に係る半導体モジュールの構成を示す上面図である。It is a top view which shows the structure of the semiconductor module which concerns on 6th Embodiment. 図１１に示す半導体モジュールのＸ－Ｘ’断面図である。FIG. 12 is an X-X ′ cross-sectional view of the semiconductor module shown in FIG. 11. 図１２（ａ）～図１２（ｃ）は、第１の電子部品の一例を示す概略断面図である。FIG. 12A to FIG. 12C are schematic cross-sectional views showing an example of the first electronic component. 第７の実施の形態に係る半導体モジュールのうち第１の電子部品近傍の概略断面図である。It is a schematic sectional drawing of the 1st electronic component vicinity among the semiconductor modules which concern on 7th Embodiment. 図１３に示す第１の電子部品の上面図である。FIG. 14 is a top view of the first electronic component shown in FIG. 13. 各実施の形態に係る半導体モジュールを備えた携帯電話の構成を示す図である。It is a figure which shows the structure of the mobile telephone provided with the semiconductor module which concerns on each embodiment. 図１５に示した携帯電話の部分断面図である。FIG. 16 is a partial cross-sectional view of the mobile phone shown in FIG. 15.
　以下、本発明の実施の形態を図面を参照して説明する。なお、図面の説明において同一の要素には同一の符号を付し、重複する説明を適宜省略する。また、以下に述べる構成は例示であり、本発明の範囲を何ら限定するものではない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and repeated descriptions are omitted as appropriate. Moreover, the structure described below is an illustration and does not limit the scope of the present invention at all.
　（第１の実施の形態）
　［半導体モジュールの構造］
　図１は、第１の実施の形態に係る半導体モジュールの構成を示す概略断面図である。図２は、第１の実施の形態に係る半導体モジュールの構成を示す上面図である。図１に示すように、第１の実施の形態に係る半導体モジュール１０は、素子搭載用基板１２と、素子搭載用基板１２上に搭載された水晶振動子１４と、水晶振動子１４を収容する収容部材１６と、収容部材１６の上に積層された半導体素子１８と、収容部材１６および半導体素子１８を封止する封止樹脂２０と、を備える。 (First embodiment)
[Structure of semiconductor module]
FIG. 1 is a schematic cross-sectional view showing the configuration of the semiconductor module according to the first embodiment. FIG. 2 is a top view showing the configuration of the semiconductor module according to the first embodiment. As shown in FIG. 1, the semiconductor module 10 according to the first embodiment houses an element mounting substrate 12, a crystal resonator 14 mounted on the element mounting substrate 12, and the crystal resonator 14. The housing member 16, the semiconductor element 18 stacked on the housing member 16, and a sealing resin 20 that seals the housing member 16 and the semiconductor element 18 are provided.
　収容部材１６は、上面および側面が金属部材１６ａで構成されている。そして、収容部材１６は、水晶振動子１４との間に空間が形成されるように水晶振動子１４を収容し、金属部材１６ａが電磁シールドとして機能する。また、半導体素子１８は、収容部材１６の上面の金属部材１６ａを覆うように収容部材１６の上に積層されている。なお、金属部材１６ａとしては、鉄を主成分とするコバールを母体とし、表面に酸化防止のためにニッケル、あるいはニッケル・金等のメッキ処理がされた部材が挙げられる。 The housing member 16 has a metal member 16a on the top and side surfaces. The accommodating member 16 accommodates the crystal resonator 14 so that a space is formed between the accommodating member 16 and the metal member 16a functions as an electromagnetic shield. The semiconductor element 18 is stacked on the housing member 16 so as to cover the metal member 16 a on the upper surface of the housing member 16. Examples of the metal member 16a include a member whose main component is Kovar whose main component is iron and whose surface is plated with nickel or nickel / gold to prevent oxidation.
　素子搭載用基板１２の上面には配線層の一部を構成する複数のパッド電極１２ａ，１２ｂが形成されている。また、半導体素子１８の上面にもパッド電極１８ａが形成されている。そして、半導体素子１８のパッド電極１８ａは、金線などからなるボンディングワイヤ２２により素子搭載用基板１２に形成されたパッド電極１２ａと電気的に接続されている。また、水晶振動子１４は、半導体素子１８が積層されている上面側とは反対側の下面に、複数のバンプ（突起電極端子）２４が形成されており、このバンプ２４を介して素子搭載用基板１２のパッド電極１２ｂと電気的に接続されている。このように、半導体素子１８は、パッド電極１２ａとボンディングワイヤ２２を介して接続されることで、半導体素子１８と素子搭載用基板１２との間に電子部品としての水晶振動子１４を配置することが可能となる。 A plurality of pad electrodes 12 a and 12 b constituting a part of the wiring layer are formed on the upper surface of the element mounting substrate 12. A pad electrode 18 a is also formed on the upper surface of the semiconductor element 18. The pad electrode 18a of the semiconductor element 18 is electrically connected to the pad electrode 12a formed on the element mounting substrate 12 by a bonding wire 22 made of a gold wire or the like. The crystal resonator 14 has a plurality of bumps (projection electrode terminals) 24 formed on the lower surface opposite to the upper surface side on which the semiconductor elements 18 are stacked. The pad electrode 12b of the substrate 12 is electrically connected. As described above, the semiconductor element 18 is connected to the pad electrode 12 a via the bonding wire 22, thereby disposing the crystal resonator 14 as an electronic component between the semiconductor element 18 and the element mounting substrate 12. Is possible.
　本実施の形態に係る半導体モジュール１０は、水晶振動子１４を収容する収容部材１６と半導体素子１８とが積層されているため、素子搭載用基板１２の面積を小さくすることができる。また、水晶振動子１４は、半導体素子１８と積み重なる状態で搭載されるため、従来のように半導体素子１８のレイアウトを優先して水晶振動子１４を半導体モジュール１０の周縁部（半導体素子１８の周囲）に配置していた場合に比べて、半導体モジュール１０の中央部に配置されることが可能となる。そのため、水晶振動子１４と封止樹脂２０の外壁側面との間隔（最も短い間隔部分）が長くなるので、水晶振動子１４から半導体モジュール１０の外部への信号の漏洩（電磁ノイズ）が低減される。 In the semiconductor module 10 according to the present embodiment, since the housing member 16 that houses the crystal resonator 14 and the semiconductor element 18 are stacked, the area of the element mounting substrate 12 can be reduced. In addition, since the crystal resonator 14 is mounted in a state of being stacked with the semiconductor element 18, the crystal resonator 14 is placed around the periphery of the semiconductor module 10 (periphery of the semiconductor element 18) with priority given to the layout of the semiconductor element 18 as in the past. It is possible to arrange the semiconductor module 10 in the central portion as compared with the case where the semiconductor module 10 is arranged. For this reason, the interval (shortest interval portion) between the crystal unit 14 and the outer wall side surface of the sealing resin 20 becomes longer, and therefore leakage of signals (electromagnetic noise) from the crystal unit 14 to the outside of the semiconductor module 10 is reduced. The
　また、金属部材１６ａは、金属表面に生じる酸化皮膜などの影響によって封止樹脂との密着性が悪い傾向にあるが、半導体モジュール１０は、収容部材１６の上面にある金属部材１６ａが半導体素子１８で覆われているため、密着性の悪い金属部材１６ａと封止樹脂２０との界面が減少し、比較的密着性の良い半導体素子１８と封止樹脂２０との界面が増加している。その結果、封止樹脂２０による電子部品（本実施の形態では収容部材１６で覆われた水晶振動子１４）やその上に積層された半導体素子１８の封止の信頼性が向上する。 Further, the metal member 16a tends to have poor adhesion to the sealing resin due to the influence of an oxide film or the like generated on the metal surface. However, in the semiconductor module 10, the metal member 16a on the upper surface of the housing member 16 is formed by the semiconductor element 18. Therefore, the interface between the metal member 16a having poor adhesion and the sealing resin 20 is reduced, and the interface between the semiconductor element 18 having relatively good adhesion and the sealing resin 20 is increased. As a result, the sealing reliability of the electronic component (the crystal resonator 14 covered with the housing member 16 in the present embodiment) and the semiconductor element 18 stacked thereon is improved by the sealing resin 20.
　特に、金型を用いたトランスファーモールド法による半導体素子の樹脂封止においては、樹脂硬化後の封止樹脂材と金型との脱離を容易にするために、封止樹脂材に微量の離型剤が添加されている。こうした離型剤は、金属板（金属部材）に対しても作用するので、金属部材と封止樹脂との密着性をさらに悪化させる傾向にある。しかしながら、上述の構成とすることにより、金属部材と封止樹脂との界面が減少するため、電子部品やその上に積層された半導体素子の封止信頼性を向上することができる。 In particular, in resin sealing of a semiconductor element using a transfer mold method using a mold, a small amount of separation is required in the sealing resin material in order to facilitate the detachment of the sealing resin material after the resin is cured and the mold. A mold is added. Since such a mold release agent also acts on a metal plate (metal member), it tends to further deteriorate the adhesion between the metal member and the sealing resin. However, with the above-described configuration, the interface between the metal member and the sealing resin is reduced, so that the sealing reliability of the electronic component and the semiconductor element stacked thereon can be improved.
　なお、本実施の形態に係る半導体素子１８は、収容部材１６の上面の面積よりも大きいため、収容部材１６の上面を全て覆うように、換言すれば、金属部材１６ａの上面を全て覆うように積層されている。そのため、金属部材１６ａの上面が封止樹脂２０と接することがなく、金属部材１６ａと封止樹脂２０との密着性の影響が低減される。 Since the semiconductor element 18 according to the present embodiment is larger than the area of the upper surface of the housing member 16, it covers the entire upper surface of the housing member 16, in other words, covers the entire upper surface of the metal member 16a. Are stacked. Therefore, the upper surface of the metal member 16a does not contact the sealing resin 20, and the influence of the adhesion between the metal member 16a and the sealing resin 20 is reduced.
　また、半導体素子１８は、封止樹脂２０と金属部材１６ａとの密着性よりも、封止樹脂２０との密着性の高い材質、例えばポリイミド樹脂からなる誘電体保護膜が半導体素子１８のパッド電極１８ａを除いたほぼ全面に形成されている。これにより、収容部材１６の上面にある金属部材１６ａが封止樹脂２０により直接封止されている場合よりも、封止樹脂２０による封止性能が向上し、半導体モジュール１０の信頼性が向上する。ここで、密着性とは、例えば接着強度の大きさや、所定の方法により封止樹脂を半導体素子や収容部材品から剥離するために必要な力として把握することができる。 In addition, the semiconductor element 18 is made of a material having a higher adhesiveness with the sealing resin 20 than the adhesiveness between the sealing resin 20 and the metal member 16a, for example, a dielectric protective film made of polyimide resin. It is formed on almost the entire surface excluding 18a. Thereby, the sealing performance by the sealing resin 20 is improved and the reliability of the semiconductor module 10 is improved as compared with the case where the metal member 16 a on the upper surface of the housing member 16 is directly sealed by the sealing resin 20. . Here, the adhesion can be grasped as, for example, the magnitude of adhesive strength or a force necessary to peel the sealing resin from the semiconductor element or the housing member by a predetermined method.
　本実施の形態に係る電子部品としては、収容部材１６の内部に空間が形成されているため、水晶振動子１４を始めとする可動部品（可動部を有する部品）を採用することができる。例えば、ＳＡＷ（Surface Acoustic Wave）フィルタを用いることもできる。このように、高周波で動作し振動する水晶振動子１４やＳＡＷフィルタ等を始めとする電子部品を備えた半導体モジュール１０であっても、外部からあるいは外部への電磁ノイズを十分抑制することができる。 As the electronic component according to the present embodiment, since a space is formed in the housing member 16, a movable component (a component having a movable portion) including the crystal resonator 14 can be employed. For example, a SAW (Surface Acoustic Wave) filter can be used. As described above, even in the semiconductor module 10 including electronic parts such as the crystal resonator 14 and the SAW filter that operate and vibrate at a high frequency, electromagnetic noise from the outside or the outside can be sufficiently suppressed. .
　なお、素子搭載用基板１２におけるパッド電極１２ｂの一つは、固定電位が入力されるように不図示のグランド端子と導通しており、パッド電極１２ｂの一つと金属部材１６ａとが不図示の配線により接続されている。これにより、電磁ノイズがより抑制される。 In addition, one of the pad electrodes 12b in the element mounting substrate 12 is electrically connected to a ground terminal (not shown) so that a fixed potential is inputted, and one of the pad electrodes 12b and the metal member 16a are not shown. Connected by. Thereby, electromagnetic noise is further suppressed.
　［製造方法］
　次に、第１の実施の形態に係る半導体モジュールの製造方法について説明する。図３（ａ）～図３（ｃ）は、第１の実施の形態に係る半導体モジュール１０の製造方法における工程を説明するための概略断面図である。 [Production method]
Next, a method for manufacturing the semiconductor module according to the first embodiment will be described. FIG. 3A to FIG. 3C are schematic cross-sectional views for explaining the steps in the method for manufacturing the semiconductor module 10 according to the first embodiment.
　はじめに、図３（ａ）に示すように、パッド電極１２ａ，１２ｂが形成された素子搭載用基板１２の上に、水晶振動子１４と収容部材１６とを搭載する。この際、収容部材１６は、水晶振動子１４との間に空間が形成されるように水晶振動子１４を収容した状態で、はんだを介してパッド電極１２ｂの上に搭載される。この状態でリフロー処理を行うことではんだがバンプ２４になり、素子搭載用基板１２に対して水晶振動子１４および収容部材１６が固定される。 First, as shown in FIG. 3A, the crystal resonator 14 and the housing member 16 are mounted on the element mounting substrate 12 on which the pad electrodes 12a and 12b are formed. At this time, the accommodating member 16 is mounted on the pad electrode 12b via solder in a state where the crystal resonator 14 is accommodated so that a space is formed between the accommodating member 16 and the crystal resonator 14. By performing the reflow process in this state, the solder becomes the bumps 24, and the crystal resonator 14 and the housing member 16 are fixed to the element mounting substrate 12.
　なお、電子部品の一つである水晶振動子１４は、気密封止されて収容部材１６に収容されており、収容部材１６の内部の空間は真空状態あるいは不活性ガスが充填された状態で維持されている。このように収容部材１６内を気密封止することで電子部品の信頼性が向上する。 Note that the crystal resonator 14 which is one of the electronic components is hermetically sealed and accommodated in the accommodating member 16, and the space inside the accommodating member 16 is maintained in a vacuum state or a state filled with an inert gas. Has been. Thus, the reliability of the electronic component is improved by hermetically sealing the inside of the housing member 16.
　次に、図３（ｂ）に示すように、金属部材１６ａの上面を全面覆うように収容部材１６の上に図示しない接着剤を介して半導体素子１８を積層する。接着剤としては、エポキシ等の樹脂中に銀、銅等の導電性粒子を固定したフィルム状の半導体搭載用接着部材が挙げられる。この状態で加熱処理を行うことで接着剤が硬化し、収容部材１６の上に半導体素子１８が固定される。 Next, as shown in FIG. 3B, a semiconductor element 18 is laminated on the housing member 16 via an adhesive (not shown) so as to cover the entire upper surface of the metal member 16a. Examples of the adhesive include a film-like semiconductor mounting adhesive member in which conductive particles such as silver and copper are fixed in a resin such as epoxy. By performing the heat treatment in this state, the adhesive is cured, and the semiconductor element 18 is fixed on the housing member 16.
　そして、図３（ｃ）に示すように、半導体素子１８のパッド電極１８ａと素子搭載用基板１２のパッド電極１２ａとをボンディングワイヤ２２で接続し、封止樹脂２０により収容部材１６と半導体素子１８とを封止する。 Then, as shown in FIG. 3C, the pad electrode 18a of the semiconductor element 18 and the pad electrode 12a of the element mounting substrate 12 are connected by the bonding wire 22, and the housing member 16 and the semiconductor element 18 are sealed by the sealing resin 20. And seal.
　このような製造方法により、収容部材１６の上面にある金属部材１６ａが半導体素子１８で覆われた半導体モジュール１０が製造される。半導体モジュール１０は、密着性の悪い金属部材１６ａと封止樹脂２０との界面が減少し、比較的密着性の良い半導体素子１８と封止樹脂２０との界面が増加している。これにより、封止樹脂２０による水晶振動子１４や半導体素子１８の封止の信頼性が向上した半導体モジュール１０を簡便に製造することができる。 The semiconductor module 10 in which the metal member 16a on the upper surface of the housing member 16 is covered with the semiconductor element 18 is manufactured by such a manufacturing method. In the semiconductor module 10, the interface between the metal member 16 a having poor adhesion and the sealing resin 20 is reduced, and the interface between the semiconductor element 18 having relatively good adhesion and the sealing resin 20 is increased. Thereby, the semiconductor module 10 in which the reliability of sealing the crystal resonator 14 and the semiconductor element 18 with the sealing resin 20 is improved can be easily manufactured.
　（第２の実施の形態）
　第１の実施の形態では、一つの半導体素子と一つの電子部品が積層された半導体モジュール１０について説明した。第２の実施の形態では、複数の半導体素子が搭載された半導体モジュールについて説明する。 (Second Embodiment)
In the first embodiment, the semiconductor module 10 in which one semiconductor element and one electronic component are stacked has been described. In the second embodiment, a semiconductor module on which a plurality of semiconductor elements are mounted will be described.
　図４は、第２の実施の形態に係る半導体モジュールの構成を示す上面図である。図５は、図４に示す半導体モジュールの構成を示す概略断面図であり、図４中のＸ－Ｘ線に沿った断面に相当する。第２の実施の形態に係る半導体モジュール１１０は、素子搭載用基板１１２の上に第１の半導体素子１２６、第２の半導体素子１１８および電子部品としての水晶振動子１１４を収容した収容部材１１６が搭載されている。収容部材１１６は、上面および側面が金属部材１１６ａで構成されている。そして、収容部材１１６は、水晶振動子１１４との間に空間が形成されるように水晶振動子１１４を収容し、金属部材１１６ａが電磁シールドとして機能する。第２の半導体素子１１８および収容部材１１６は、第１の実施の形態と同じように積層されている。半導体モジュール１１０は、封止樹脂１２０により封止されている。また、半導体モジュール１１０は、水晶振動子以外に複数の電子部品１２８が搭載されている。電子部品１２８としては、例えば、コンデンサ、抵抗、インダクタ等がある。 FIG. 4 is a top view showing the configuration of the semiconductor module according to the second embodiment. FIG. 5 is a schematic cross-sectional view showing the configuration of the semiconductor module shown in FIG. 4, and corresponds to a cross section taken along line XX in FIG. The semiconductor module 110 according to the second embodiment includes a housing member 116 that houses a first semiconductor element 126, a second semiconductor element 118, and a crystal resonator 114 as an electronic component on an element mounting substrate 112. It is installed. The housing member 116 has a metal member 116a on the top and side surfaces. The accommodating member 116 accommodates the crystal resonator 114 so that a space is formed between the accommodating member 116 and the metal member 116a functions as an electromagnetic shield. The second semiconductor element 118 and the housing member 116 are stacked in the same manner as in the first embodiment. The semiconductor module 110 is sealed with a sealing resin 120. In addition, the semiconductor module 110 has a plurality of electronic components 128 mounted in addition to the crystal resonator. Examples of the electronic component 128 include a capacitor, a resistor, and an inductor.
　素子搭載用基板１１２の上面には配線層の一部を構成する複数のパッド電極１１２ａ，１１２ｂが形成されている。また、第２の半導体素子１１８の上面にもパッド電極１１８ａが形成されている。そして、第２の半導体素子１１８のパッド電極１１８ａは、金線などからなるボンディングワイヤ１２２により素子搭載用基板１１２に形成されたパッド電極１１２ａと電気的に接続されている。また、水晶振動子１１４は、第２の半導体素子１１８が積層されている上面側とは反対側の下面に、複数のバンプ１２４が形成されており、このバンプ１２４を介して素子搭載用基板１１２のパッド電極１１２ｂと電気的に接続されている。このように、第２の半導体素子１１８は、パッド電極１１２ａとボンディングワイヤ１２２を介して接続されることで、第２の半導体素子１１８と素子搭載用基板１１２との間に電子部品としての水晶振動子１１４を配置することが可能となる。 A plurality of pad electrodes 112a and 112b constituting a part of the wiring layer are formed on the upper surface of the element mounting substrate 112. A pad electrode 118 a is also formed on the upper surface of the second semiconductor element 118. The pad electrode 118a of the second semiconductor element 118 is electrically connected to the pad electrode 112a formed on the element mounting substrate 112 by a bonding wire 122 made of a gold wire or the like. In the crystal resonator 114, a plurality of bumps 124 are formed on the lower surface opposite to the upper surface side on which the second semiconductor element 118 is laminated, and the element mounting substrate 112 is interposed via the bumps 124. The pad electrode 112b is electrically connected. As described above, the second semiconductor element 118 is connected to the pad electrode 112a via the bonding wire 122, so that the crystal vibration as an electronic component is provided between the second semiconductor element 118 and the element mounting substrate 112. The child 114 can be arranged.
　また、第１の半導体素子１２６は、下面にアレイ状に並んだ複数のバンプ１２４が形成されており、このバンプ１２４を介して素子搭載用基板１１２に形成されているパッド電極１１２ｂと電気的に接続されている。このような半導体モジュール１１０においても第１の実施の形態と同様の効果が得られる。さらに、第１の半導体素子１２６や電子部品１２８への電磁ノイズが抑制されるので、半導体モジュール１１０の信頼性を向上することができる。 The first semiconductor element 126 has a plurality of bumps 124 arranged in an array on the lower surface, and is electrically connected to the pad electrode 112b formed on the element mounting substrate 112 via the bumps 124. It is connected. Even in such a semiconductor module 110, the same effect as in the first embodiment can be obtained. Furthermore, since electromagnetic noise to the first semiconductor element 126 and the electronic component 128 is suppressed, the reliability of the semiconductor module 110 can be improved.
　（第３の実施の形態）
　第１の実施の形態に係る半導体モジュール１０においては、収容部材の上面を構成する金属部材の全面を半導体素子が覆っていたが、第３の実施の形態では、金属部材の一部が半導体素子で覆われている場合について説明する。なお、第１の実施の形態と同様の構成については説明を適宜省略する。 (Third embodiment)
In the semiconductor module 10 according to the first embodiment, the semiconductor element covers the entire surface of the metal member constituting the upper surface of the housing member. However, in the third embodiment, a part of the metal member is a semiconductor element. The case where it is covered with will be described. Note that description of the same configuration as that of the first embodiment is omitted as appropriate.
　図６は、第３の実施の形態に係る半導体モジュールの構成を示す概略断面図である。図６に示すように、第３の実施の形態に係る半導体モジュール２１０は、素子搭載用基板２１２と、素子搭載用基板２１２上に搭載された水晶振動子２１４と、水晶振動子２１４を収容する収容部材２１６と、収容部材２１６の上に積層された半導体素子２１８と、収容部材２１６および半導体素子２１８を封止する封止樹脂２２０と、を備える。 FIG. 6 is a schematic cross-sectional view showing the configuration of the semiconductor module according to the third embodiment. As shown in FIG. 6, the semiconductor module 210 according to the third embodiment accommodates the element mounting substrate 212, the crystal resonator 214 mounted on the element mounting substrate 212, and the crystal resonator 214. The housing member 216, a semiconductor element 218 stacked on the housing member 216, and a sealing resin 220 that seals the housing member 216 and the semiconductor element 218 are provided.
　収容部材２１６は、上面の一部が金属部材２１６ａで構成されている。そして、収容部材２１６は、水晶振動子２１４との間に空間が形成されるように水晶振動子２１４を収容し、金属部材２１６ａが電磁シールドとして機能する。また、半導体素子２１８は、収容部材２１６の金属部材２１６ａの一部を覆うように収容部材２１６の上に積層されている。 The housing member 216 has a part of the upper surface made of a metal member 216a. The accommodating member 216 accommodates the crystal resonator 214 so that a space is formed between the accommodating member 216 and the metal member 216a functions as an electromagnetic shield. Further, the semiconductor element 218 is stacked on the housing member 216 so as to cover a part of the metal member 216 a of the housing member 216.
　本実施の形態に係る半導体モジュール２１０は、水晶振動子２１４を収容する収容部材２１６と半導体素子２１８とが積層されているため、素子搭載用基板２１２の面積を小さくすることができる。また、水晶振動子２１４は、半導体素子２１８と積み重なる状態で搭載されるため、半導体モジュール２１０の中央部に配置されることが可能となる。そのため、水晶振動子２１４から半導体モジュール２１０の外部への信号の漏洩（電磁ノイズ）が低減される。 In the semiconductor module 210 according to the present embodiment, since the housing member 216 for housing the crystal oscillator 214 and the semiconductor element 218 are laminated, the area of the element mounting substrate 212 can be reduced. Further, since the crystal resonator 214 is mounted so as to be stacked with the semiconductor element 218, it can be disposed at the center of the semiconductor module 210. Therefore, signal leakage (electromagnetic noise) from the crystal unit 214 to the outside of the semiconductor module 210 is reduced.
　また、半導体モジュール２１０は、収容部材２１６の上面にある金属部材２１６ａの一部が半導体素子２１８で覆われているため、密着性の悪い金属部材２１６ａと封止樹脂２２０との界面が減少し、比較的密着性の良い半導体素子２１８と封止樹脂２２０との界面が増加している。その結果、封止樹脂２２０による水晶振動子２１４やその上に積層された半導体素子２１８の封止の信頼性が向上する。 Further, in the semiconductor module 210, since a part of the metal member 216a on the upper surface of the housing member 216 is covered with the semiconductor element 218, the interface between the metal member 216a having poor adhesion and the sealing resin 220 is reduced. The interface between the semiconductor element 218 having relatively good adhesion and the sealing resin 220 is increasing. As a result, the sealing reliability of the crystal resonator 214 by the sealing resin 220 and the semiconductor element 218 stacked thereon is improved.
　（第４の実施の形態）
　本実施の形態に係る半導体モジュールは、電子部品を収容する収容部材の金属部材を覆うために半導体素子の代わりにダミー部材を用いることで、封止樹脂との密着性を改善する点が特徴の一つである。なお、前述の各実施の形態と同様の構成については説明を適宜省略する。 (Fourth embodiment)
The semiconductor module according to the present embodiment is characterized in that the adhesion with the sealing resin is improved by using a dummy member instead of the semiconductor element to cover the metal member of the housing member that houses the electronic component. One. Note that description of the same configuration as that of each of the above-described embodiments is omitted as appropriate.
　図７は、第４の実施の形態に係る半導体モジュールの構成を示す概略断面図である。図７に示すように、第４の実施の形態に係る半導体モジュール３１０は、素子搭載用基板３１２と、素子搭載用基板３１２上に搭載された水晶振動子３１４と、水晶振動子３１４を収容する収容部材３１６と、収容部材３１６の上に積層されたダミー部材３１７と、収容部材３１６と並んで搭載された半導体素子３１８と、収容部材３１６、ダミー部材３１７および半導体素子３１８を封止する封止樹脂３２０と、を備える。 FIG. 7 is a schematic cross-sectional view showing the configuration of the semiconductor module according to the fourth embodiment. As shown in FIG. 7, a semiconductor module 310 according to the fourth embodiment houses an element mounting substrate 312, a crystal resonator 314 mounted on the element mounting substrate 312, and the crystal resonator 314. Housing member 316, dummy member 317 stacked on housing member 316, semiconductor element 318 mounted side by side with housing member 316, sealing for sealing housing member 316, dummy member 317, and semiconductor element 318 Resin 320.
　収容部材３１６は、上面および側面が金属部材３１６ａで構成されている。そして、収容部材３１６は、水晶振動子３１４との間に空間が形成されるように水晶振動子３１４を収容し、金属部材３１６ａが電磁シールドとして機能する。また、ダミー部材３１７は、収容部材３１６の金属部材３１６ａを覆うように収容部材３１６の上に積層されている。ダミー部材３１７は、封止樹脂３２０と密着性の高い材質、例えば、ポリイミド樹脂からなる誘電体シートで構成されている。 The housing member 316 has a metal member 316a on the top and side surfaces. The accommodating member 316 accommodates the crystal resonator 314 so that a space is formed between the accommodating member 316 and the metal member 316a functions as an electromagnetic shield. Further, the dummy member 317 is stacked on the housing member 316 so as to cover the metal member 316a of the housing member 316. The dummy member 317 is made of a dielectric sheet made of a material having high adhesion to the sealing resin 320, for example, a polyimide resin.
　半導体素子３１８は、下面にアレイ状に並んだ複数のバンプ（突起電極端子）３２２が形成されており、このバンプ３２２を介して素子搭載用基板３１２に形成されているパッド電極３１２ａと電気的に接続されている。このような半導体モジュール３１０においても第１の実施の形態と同様の効果が得られる。 The semiconductor element 318 has a plurality of bumps (projection electrode terminals) 322 arranged in an array on the lower surface, and is electrically connected to a pad electrode 312 a formed on the element mounting substrate 312 via the bumps 322. It is connected. Even in such a semiconductor module 310, the same effect as in the first embodiment can be obtained.
　上述の各半導体モジュールの主な効果をまとめると以下のようになる。（１）電子部品を収容する収容部材と封止樹脂との密着性の悪い界面領域が減少することで、半導体モジュールの信頼性が向上する。（２）水晶振動子等のサイズが大きい電子部品は、単独で基板上に搭載しようとすると半導体モジュール上のレイアウトにおいて外周部近傍に配置せざるを得ないことが多いが、上述の実施の形態によれば、半導体素子を電子部品の上に積層することで水晶振動子を半導体モジュールの中央部近傍に配置することが可能となり、水晶振動子から半導体モジュール外への信号の漏洩、換言すれば電磁ノイズが低減される。 The main effects of each semiconductor module described above are summarized as follows. (1) The reliability of the semiconductor module is improved by reducing the interface region with poor adhesion between the housing member that houses the electronic component and the sealing resin. (2) When an electronic component having a large size, such as a crystal resonator, is inevitably mounted on a substrate, it often has to be arranged near the outer periphery in the layout on the semiconductor module. According to the above, by stacking the semiconductor element on the electronic component, the crystal unit can be disposed near the center of the semiconductor module, and in other words, the leakage of the signal from the crystal unit to the outside of the semiconductor module, in other words Electromagnetic noise is reduced.
　（第５の実施の形態）
　本発明者らは上述の各半導体モジュールを考案する過程において、基板上に搭載された電子部品を収容する収容部材を単独で樹脂により封止する際、電子部品の性能に影響を与える事実に想到した。そこで、本発明者らが鋭意検討した結果、収容部材の金属部材が樹脂注入圧により変形し、その応力が内部の電子部品に伝達されることで性能に影響を与えることがわかった。具体的には、電子部品が水晶振動子の場合、周波数が所望の値からオフセットする。 (Fifth embodiment)
In the process of devising each of the semiconductor modules described above, the present inventors have come up with the fact that when a housing member that houses an electronic component mounted on a substrate is sealed with resin alone, the performance of the electronic component is affected. did. Thus, as a result of intensive studies by the present inventors, it has been found that the metal member of the housing member is deformed by the resin injection pressure, and the stress is transmitted to the internal electronic component, thereby affecting the performance. Specifically, when the electronic component is a crystal resonator, the frequency is offset from a desired value.
　図８は、樹脂注入圧による水晶振動子の周波数変動を説明するための模式図である。図８に示す電子部品４１４は、素子部としての水晶振動子４０２と、水晶振動子４０２との間に空間が形成されるように水晶振動子４０２を収容する収容部材４０４と、を有する。収容部材４０４は、セラミック基板からなる容器４０４ａと、容器４０４ａの上部に固定されている水晶振動子４０２を封止するようにその上方を覆う蓋体としての金属製封止板４０４ｂとを有する。また、容器４０４ａの下面には、水晶振動子４０２と導通している金属端子４１４ｂと、金属製封止板４０４ｂと導通している金属端子４１４ｃが設けられている。 FIG. 8 is a schematic diagram for explaining the frequency fluctuation of the crystal resonator due to the resin injection pressure. An electronic component 414 illustrated in FIG. 8 includes a crystal resonator 402 serving as an element portion, and a housing member 404 that houses the crystal resonator 402 so that a space is formed between the crystal resonator 402. The housing member 404 includes a container 404a made of a ceramic substrate, and a metal sealing plate 404b as a lid that covers the crystal resonator 402 fixed to the upper part of the container 404a so as to seal it. Further, on the lower surface of the container 404a, a metal terminal 414b that is electrically connected to the crystal unit 402 and a metal terminal 414c that is electrically connected to the metal sealing plate 404b are provided.
　このような電子部品４１４を金属端子４１４ｂ，４１４ｃが直接素子搭載用基板に接合するように素子搭載用基板に搭載し、電子部品４１４全体を金型を用いたトランスファーモールド法により封止する際、金属製封止板４０４ｂには、図８に示す矢印Ａの向きに樹脂注入圧がかかる。そのため、樹脂注入圧は、金属製封止板４０４ｂを撓ませ、金属製封止板４０４ｂと一体となっている容器４０４ａを介して水晶振動子４０２に内部応力を発生させる。このような内部応力の発生は水晶振動子４０２を歪ませるため、水晶振動子４０２の発振周波数が既定値からオフセットする。 When such an electronic component 414 is mounted on an element mounting substrate such that the metal terminals 414b and 414c are directly bonded to the element mounting substrate, and the entire electronic component 414 is sealed by a transfer molding method using a mold, Resin injection pressure is applied to the metal sealing plate 404b in the direction of arrow A shown in FIG. Therefore, the resin injection pressure causes the metal sealing plate 404b to bend and generates internal stress in the crystal resonator 402 via the container 404a integrated with the metal sealing plate 404b. Since the generation of such internal stress distorts the crystal unit 402, the oscillation frequency of the crystal unit 402 is offset from the predetermined value.
　そこで、本実施の形態に係る回路モジュールは、電子部品を収容する収容部材の金属部材が封止時における樹脂注入圧により撓むことを抑制するために、金属部材を覆うように収容部材の上に板状部材を積層している点が特徴の１つである。 Therefore, the circuit module according to the present embodiment has an upper surface of the housing member that covers the metal member in order to prevent the metal member of the housing member that houses the electronic component from being bent by the resin injection pressure at the time of sealing. One of the features is that the plate-like members are laminated on each other.
　図９は、第５の実施の形態に係る回路モジュールの構成を示す概略断面図である。図９に示すように、第５の実施の形態に係る回路モジュール５１０は、素子搭載用基板５１２と、素子搭載用基板５１２上に搭載された水晶振動子５１４と、水晶振動子５１４を収容する収容部材５１６と、収容部材５１６の上に積層された板状部材５１７と、収容部材５１６および板状部材５１７を封止する封止樹脂５２０と、を備える。 FIG. 9 is a schematic cross-sectional view showing the configuration of the circuit module according to the fifth embodiment. As shown in FIG. 9, a circuit module 510 according to the fifth embodiment houses an element mounting substrate 512, a crystal resonator 514 mounted on the element mounting substrate 512, and the crystal resonator 514. The housing member 516, a plate member 517 stacked on the housing member 516, and a sealing resin 520 that seals the housing member 516 and the plate member 517 are provided.
　収容部材５１６は、上面および側面が金属部材５１６ａで構成されている。そして、収容部材５１６は、水晶振動子５１４との間に空間が形成されるように水晶振動子５１４を収容し、金属部材５１６ａが電磁シールドとして機能する。また、板状部材５１７は、収容部材５１６の金属部材５１６ａを覆うように収容部材５１６の上に積層されている。板状部材５１７は、金属部材５１６ａが撓むことを抑制する程度の剛性を有するものである。このような板状部材５１７としては、封止樹脂５２０よりも熱膨張係数が十分に小さく高い剛性を有するシリコンまたはセラミック等の材料が例示される。 The housing member 516 has a metal member 516a on the top and side surfaces. The accommodating member 516 accommodates the crystal resonator 514 so that a space is formed between the accommodating member 516 and the metal member 516a functions as an electromagnetic shield. Further, the plate-like member 517 is laminated on the housing member 516 so as to cover the metal member 516 a of the housing member 516. The plate-like member 517 has rigidity enough to prevent the metal member 516a from being bent. Examples of such a plate-like member 517 include a material such as silicon or ceramic having a sufficiently small thermal expansion coefficient and higher rigidity than the sealing resin 520.
　具体的には、金属部材５１６ａの表面に、厚みが１５０μｍのシリコン個片からなる板状部材５１７を接着部材ＤＡＦ（Die attach film）を介して固着する。これにより、金属部材５１６ａより剛性の高い板状部材５１７の働きにより金属部材の撓みが抑制される。その結果、水晶振動子における内部応力の発生が抑制され、水晶振動子の発振周波数のオフセットが低減される。なお、シリコンやセラミックなどの材料は、少なくとも金属材料よりも封止樹脂との密着性が良好であるため、前述の各実施の形態で述べられているような金属部材５１６ａと封止樹脂５２０との密着性の改善という観点からも好ましい。 Specifically, a plate-like member 517 made of a silicon piece having a thickness of 150 μm is fixed to the surface of the metal member 516a via an adhesive member DAF (Die attach film). Thereby, the bending of the metal member is suppressed by the action of the plate-like member 517 having higher rigidity than the metal member 516a. As a result, the generation of internal stress in the crystal unit is suppressed, and the offset of the oscillation frequency of the crystal unit is reduced. Note that since materials such as silicon and ceramic have at least better adhesion to the sealing resin than metal materials, the metal member 516a and the sealing resin 520 as described in each of the above embodiments are used. It is also preferable from the viewpoint of improving the adhesion.
　なお、板状部材５１７の大きさは、金属部材５１６ａの撓みをある程度以上抑制できるものであれば、形状や厚みは特に限定されるものではない。例えば、金属部材５１６ａと封止樹脂５２０との密着性の改善という観点から見れば、板状部材５１７は、金属部材５１６ａの表面を半分以上覆うことができる大きさであるとよい。また、収容部材５１６の大きさ（素子搭載用基板表面に占める面積）が２．０ｍｍ×１．６ｍｍ程度の場合、水晶振動子５１４の大きさは、収容部材５１６の約７０％である約１．４ｍｍ×１．１ｍｍ程度になる。したがって、樹脂封止圧に対する補強材という観点からは、板状部材５１７は、水晶振動子５１４と同等もしくはそれ以上の面積を有することが好ましい。もちろん、板状部材５１７の大きさが金属部材５１６ａより大きくても構わない。 The shape and thickness of the plate member 517 are not particularly limited as long as the bending of the metal member 516a can be suppressed to some extent. For example, from the viewpoint of improving the adhesion between the metal member 516a and the sealing resin 520, the plate-like member 517 may have a size that can cover more than half of the surface of the metal member 516a. Further, when the size of the accommodating member 516 (area occupied on the surface of the element mounting substrate) is about 2.0 mm × 1.6 mm, the size of the crystal resonator 514 is about 1 which is about 70% of the accommodating member 516. About 4mm x 1.1mm. Therefore, from the viewpoint of a reinforcing material against the resin sealing pressure, the plate-like member 517 preferably has an area equal to or larger than that of the crystal resonator 514. Of course, the size of the plate-like member 517 may be larger than that of the metal member 516a.
　以上、第５の実施の形態では、電子部品のみを封止した回路モジュールの構成に板状部材を採用した例についてついて説明したが、図７に示すように、半導体素子と電子部品を並置した半導体モジュールの構成に採用することもできる。 As described above, in the fifth embodiment, the example in which the plate-like member is employed in the configuration of the circuit module in which only the electronic component is sealed has been described. However, as illustrated in FIG. 7, the semiconductor element and the electronic component are juxtaposed. It can also be employed in the configuration of a semiconductor module.
　（第６の実施の形態）
　［半導体モジュールの構造］
　図１０は、第６の実施の形態に係る半導体モジュールの構成を示す上面図である。図１１は、図１０に示す半導体モジュールのＸ－Ｘ’断面図である。第６の実施の形態に係る半導体モジュール１０１０は、半導体素子１０１２と、第１の電子部品１０１４と、複数の第２の電子部品１０１６と、素子搭載用基板１０１８と、封止樹脂１０２０と、を備える。半導体素子１０１２は、半導体材料を主原料とし、例えば、トランジスタ、サイリスタ、ダイオード等の能動素子として機能する部品である。 (Sixth embodiment)
[Structure of semiconductor module]
FIG. 10 is a top view showing the configuration of the semiconductor module according to the sixth embodiment. FIG. 11 is a cross-sectional view of the semiconductor module shown in FIG. 10 taken along the line XX ′. A semiconductor module 1010 according to the sixth embodiment includes a semiconductor element 1012, a first electronic component 1014, a plurality of second electronic components 1016, an element mounting substrate 1018, and a sealing resin 1020. Prepare. The semiconductor element 1012 is a component that uses a semiconductor material as a main raw material and functions as an active element such as a transistor, a thyristor, or a diode.
　第１の電子部品１０１４は、内部の空間に素子部が形成された電子部品であり、例えば、水晶振動子として機能する部品である。第１の電子部品１０１４は、その下面が金属部材１０１４ａで構成されており、この金属部材１０１４ａが電磁シールドとして機能する。また、第２の電子部品１０１６は、水晶振動子以外の部品であり、例えば、コンデンサ、抵抗、インダクタ等がある。素子搭載用基板１０１８は、配線層１０２２が形成されているとともに半導体素子１０１２、第１の電子部品１０１４および複数の第２の電子部品１０１６を搭載する。封止樹脂１０２０は、半導体素子１０１２、第１の電子部品１０１４および複数の第２の電子部品１０１６を封止する。そして、第１の電子部品１０１４は、金属部材１０１４ａが形成されている面を下面として素子搭載用基板１０１８上に搭載されている。 The first electronic component 1014 is an electronic component in which an element portion is formed in an internal space, and is a component that functions as, for example, a crystal resonator. The lower surface of the first electronic component 1014 is composed of a metal member 1014a, and the metal member 1014a functions as an electromagnetic shield. The second electronic component 1016 is a component other than the crystal unit, and includes, for example, a capacitor, a resistor, an inductor, and the like. The element mounting substrate 1018 is provided with a wiring layer 1022 and a semiconductor element 1012, a first electronic component 1014, and a plurality of second electronic components 1016. The sealing resin 1020 seals the semiconductor element 1012, the first electronic component 1014, and the plurality of second electronic components 1016. The first electronic component 1014 is mounted on the element mounting substrate 1018 with the surface on which the metal member 1014a is formed as the lower surface.
　素子搭載用基板１０１８の上面には配線層の一部を構成する複数のパッド電極１０１８ａが形成されている。また、半導体素子１０１２の上面にもパッド電極１０１２ａが形成されている。そして、半導体素子１０１２のパッド電極１０１２ａは、金線などからなるボンディングワイヤ１０２４により素子搭載用基板１０１８に形成されたパッド電極１０１８ａと電気的に接続されている。 A plurality of pad electrodes 1018a constituting a part of the wiring layer are formed on the upper surface of the element mounting substrate 1018. A pad electrode 1012 a is also formed on the upper surface of the semiconductor element 1012. The pad electrode 1012a of the semiconductor element 1012 is electrically connected to the pad electrode 1018a formed on the element mounting substrate 1018 by a bonding wire 1024 made of a gold wire or the like.
　第１の電子部品１０１４は、金属部材１０１４ａが形成されている面と反対側の上面側に金属端子１０１４ｂを有している。一方、素子搭載用基板１０１８の上面には、配線層１０２２のうち信号線１０２２ａの一部を構成するパッド電極１０１８ｂが形成されており、そのパッド電極１０１８ｂと金属端子１０１４ｂとがボンディングワイヤ１０２６で接続されている。 The first electronic component 1014 has a metal terminal 1014b on the upper surface side opposite to the surface on which the metal member 1014a is formed. On the other hand, a pad electrode 1018b constituting a part of the signal line 1022a of the wiring layer 1022 is formed on the upper surface of the element mounting substrate 1018, and the pad electrode 1018b and the metal terminal 1014b are connected by a bonding wire 1026. Has been.
　金属部材１０１４ａや金属端子１０１４ｂは、金属表面に生じる酸化皮膜などの影響によって封止樹脂との密着性が悪い傾向にある。しかしながら、本実施の形態に係る半導体モジュール１０１０においては、第１の電子部品１０１４の表面のうち封止樹脂１０２０と接する上面側に設けられている金属端子１０１４ｂは全面ではなくランド状であるため、第１の電子部品１０１４の下面側にある金属部材１０１４ａよりも面積は小さい。一方、第１の電子部品１０１４の表面のうち金属端子１０１４ｂよりも面積の大きい金属部材１０１４ａは、素子搭載用基板１０１８と接しているため、金属部材１０１４ａと封止樹脂１０２０との間の密着性の悪い界面の面積が減少する。そのため、金属部材１０１４ａが上面にある場合と比べて、金属部材１０１４ａや金属端子１０１４ｂと封止樹脂１０２０との間の密着性の悪い界面が全体として減少し、剥離やクラック等の不具合の発生が低減されることで、封止樹脂１０２０による電子部品や半導体素子の封止の信頼性が向上する。 The metal member 1014a and the metal terminal 1014b tend to have poor adhesion to the sealing resin due to the influence of an oxide film generated on the metal surface. However, in the semiconductor module 1010 according to the present embodiment, the metal terminal 1014b provided on the upper surface side in contact with the sealing resin 1020 in the surface of the first electronic component 1014 has a land shape instead of the entire surface. The area is smaller than that of the metal member 1014a on the lower surface side of the first electronic component 1014. On the other hand, the metal member 1014a having a larger area than the metal terminal 1014b in the surface of the first electronic component 1014 is in contact with the element mounting substrate 1018, and thus the adhesion between the metal member 1014a and the sealing resin 1020. The area of the poor interface is reduced. Therefore, compared with the case where the metal member 1014a is on the upper surface, the interface with poor adhesion between the metal member 1014a and the metal terminal 1014b and the sealing resin 1020 is reduced as a whole, and problems such as peeling and cracking occur. By being reduced, the reliability of sealing of electronic components and semiconductor elements by the sealing resin 1020 is improved.
　特に、金型を用いたトランスファーモールド法による半導体素子の樹脂封止においては、樹脂硬化後の封止樹脂材と金型との脱離を容易にするために、封止樹脂材に微量の離型剤が添加されている。こうした離型剤は、金属部材（金属端子）に対しても作用するので、金属部材や金属端子と封止樹脂との密着性をさらに悪化させる傾向にある。しかしながら、上述の構成とすることにより、金属部材および金属端子と封止樹脂との界面が減少するため、電子部品や半導体素子の封止信頼性を向上することができる。 In particular, in resin sealing of a semiconductor element using a transfer mold method using a mold, a small amount of separation is required in the sealing resin material in order to facilitate the detachment of the sealing resin material after the resin is cured and the mold. A mold is added. Since such a mold release agent also acts on a metal member (metal terminal), it tends to further deteriorate the adhesion between the metal member or metal terminal and the sealing resin. However, with the above-described configuration, the interface between the metal member and the metal terminal and the sealing resin is reduced, so that the sealing reliability of the electronic component or the semiconductor element can be improved.
　また、金属部材１０１４ａは、素子搭載用基板１０１８の上面に形成されている金属ランド１０１８ｃと不図示のはんだあるいは銀ペーストにより固着されている。これにより、第１の電子部品１０１４を素子搭載用基板１０１８に強固に固定することが可能となる。 Further, the metal member 1014a is fixed to a metal land 1018c formed on the upper surface of the element mounting substrate 1018 by solder or silver paste (not shown). As a result, the first electronic component 1014 can be firmly fixed to the element mounting substrate 1018.
　また、本実施の形態に係る金属ランド１０１８ｃは、配線層１０２２のうち固定電位（例えば接地電位）が入力されるように不図示のグランド端子と導通しており、これと接続されている金属部材１０１４ａは、電磁シールドとして機能する。そのため、金属部材１０１４ａの下方を経由して半導体素子１０１２と導通している信号線１０２２ａは、電磁シールドとして機能する金属部材１０１４ａにより、第１の電子部品１０１４が発する電磁ノイズの影響を受けづらくなり、半導体モジュールの動作信頼性が向上する。 The metal land 1018c according to the present embodiment is electrically connected to a ground terminal (not shown) so that a fixed potential (for example, ground potential) is input in the wiring layer 1022, and is connected to the metal member. 1014a functions as an electromagnetic shield. Therefore, the signal line 1022a that is electrically connected to the semiconductor element 1012 via the lower side of the metal member 1014a is less likely to be affected by electromagnetic noise generated by the first electronic component 1014 due to the metal member 1014a that functions as an electromagnetic shield. The operational reliability of the semiconductor module is improved.
　また、金属部材１０１４ａをグランド端子と導通させることにより、従来グランド端子と接続するために設けられていた第１の電子部品１０１４の金属端子を減らすことが可能となり、金属と封止樹脂との界面を更に減少させることが可能となる。なお、上述の信号線１０２２ａは、必ずしも第１の電子部品１０１４と半導体素子１０１２とを導通するものだけでなく、素子搭載用基板１０１８の裏面側に設けられている不図示の外部接続端子と半導体素子１０１２とを導通するものであってもよい。 Further, by making the metal member 1014a conductive with the ground terminal, it is possible to reduce the metal terminals of the first electronic component 1014 that are conventionally provided for connection with the ground terminal, and the interface between the metal and the sealing resin. Can be further reduced. Note that the above-described signal line 1022a is not necessarily one that conducts the first electronic component 1014 and the semiconductor element 1012, but an external connection terminal (not shown) provided on the back side of the element mounting substrate 1018 and the semiconductor. The element 1012 may be electrically connected.
　また、本実施の形態に係る第１の電子部品１０１４の金属端子１０１４ｂは、素子搭載用基板１０１８から離れて上方に位置している。そのため、素子搭載用基板１０１８の配線層１０２２に存在する金属パターンとの意図しない容量の発生がない。特に、第１の電子部品１０１４が水晶振動子である場合には、負荷容量の変動による発振停止や周波数変動などの発振動作の不具合を防止でき、半導体モジュールの動作信頼性が向上する。 Further, the metal terminal 1014b of the first electronic component 1014 according to the present embodiment is located above and away from the element mounting substrate 1018. Therefore, there is no generation of unintended capacitance with the metal pattern existing in the wiring layer 1022 of the element mounting substrate 1018. In particular, when the first electronic component 1014 is a crystal resonator, it is possible to prevent problems in oscillation operation such as oscillation stop and frequency variation due to variation in load capacitance, and the operation reliability of the semiconductor module is improved.
　［電子部品の構造］
　次に、電子部品の構造についていくつか例示して詳述する。図１２（ａ）～図１２（ｃ）は、前述の第１の電子部品１０１４に対応する電子部品の一例を示す概略断面図である。なお、図１２では、電子部品の金属部材が上になっているが、素子搭載用基板１０１８に搭載する際には、金属部材の面が下面になる。 [Structure of electronic components]
Next, some examples of the structure of the electronic component will be described in detail. FIGS. 12A to 12C are schematic cross-sectional views showing an example of an electronic component corresponding to the first electronic component 1014 described above. In FIG. 12, the metal member of the electronic component is on the upper side, but when mounted on the element mounting substrate 1018, the surface of the metal member becomes the lower surface.
　図１２（ａ）に示す第１の電子部品１１１４は、素子部としての水晶振動子１１０２と、水晶振動子１１０２との間に空間が形成されるように水晶振動子１１０２を収容する収容部材１１０４と、を有する。収容部材１１０４は、セラミック基板からなる容器１１０４ａと、容器１１０４ａの上部に固定されている水晶振動子１１０２を封止するようにその上方を覆う蓋体としての金属製封止板１１０４ｂとを有する。また、容器１１０４ａの下面には、水晶振動子１１０２と導通している金属端子１１１４ｂと、金属製封止板１１０４ｂと導通している金属端子１１１４ｃが設けられている。このように構成されている第１の電子部品１１１４は、金属製封止板１１０４ｂを下面として図１１に示すような素子搭載用基板１０１８に搭載される。 A first electronic component 1114 shown in FIG. 12A has a housing member 1104 for housing the crystal resonator 1102 so that a space is formed between the crystal resonator 1102 as an element portion and the crystal resonator 1102. And having. The housing member 1104 includes a container 1104a made of a ceramic substrate, and a metal sealing plate 1104b as a lid that covers the crystal resonator 1102 fixed to the upper part of the container 1104a so as to seal it. Further, a metal terminal 1114b that is electrically connected to the crystal resonator 1102 and a metal terminal 1114c that is electrically connected to the metal sealing plate 1104b are provided on the lower surface of the container 1104a. The first electronic component 1114 configured as described above is mounted on an element mounting substrate 1018 as shown in FIG. 11 with the metal sealing plate 1104b as the lower surface.
　図１２（ｂ）に示す第１の電子部品１２１４は、素子部としての水晶振動子１２０２および半導体集積回路１２０３と、水晶振動子１２０２との間に空間が形成されるように水晶振動子１２０２を収容する収容部材１２０４と、を有する。収容部材１２０４は、容器１２０４ａと、容器１２０４ａの上部に固定されている水晶振動子１２０２を封止するようにその上方を覆う金属製封止板１２０４ｂとを有する。また、容器１２０４ａの下面には、金属製封止板１２０４ｂと導通している金属端子１２１４ｃと、半導体集積回路１２０３と導通している金属端子１２１４ｂとが設けられている。このように構成されている第１の電子部品１２１４は、金属製封止板１２０４ｂを下面として図１１に示すような素子搭載用基板１０１８に搭載される。 The first electronic component 1214 shown in FIG. 12B includes a crystal resonator 1202 so that a space is formed between the crystal resonator 1202 and the semiconductor integrated circuit 1203 as element portions and the crystal resonator 1202. A housing member 1204 for housing. The housing member 1204 includes a container 1204a and a metal sealing plate 1204b that covers the crystal resonator 1202 fixed to the upper part of the container 1204a so as to seal it. In addition, a metal terminal 1214c that is electrically connected to the metal sealing plate 1204b and a metal terminal 1214b that is electrically connected to the semiconductor integrated circuit 1203 are provided on the lower surface of the container 1204a. The first electronic component 1214 configured as described above is mounted on an element mounting substrate 1018 as shown in FIG. 11 with the metal sealing plate 1204b as the bottom surface.
　図１２（ｃ）に示す第１の電子部品１３１４は、素子部としてのＳＡＷフィルタ１３０２と、ＳＡＷフィルタ１３０２との間に空間が形成されるようにＳＡＷフィルタ１３０２を収容する収容部材１３０４と、を有する。収容部材１３０４は、容器１３０４ａと、容器１３０４ａの上部に固定されているＳＡＷフィルタ１３０２を封止するようにその上方を覆う金属製封止板１３０４ｂとを有する。また、容器１３０４ａの下面には、金属製封止板１３０４ｂと導通している金属端子１３１４ｃと、ＳＡＷフィルタ１３０２と導通している金属端子１３１４ｂとが設けられている。このように構成されている第１の電子部品１３１４は、金属製封止板１３０４ｂを下面として図１１に示すような素子搭載用基板１０１８に搭載される。 A first electronic component 1314 shown in FIG. 12C includes a SAW filter 1302 serving as an element portion and a housing member 1304 that houses the SAW filter 1302 so that a space is formed between the SAW filter 1302. Have. The housing member 1304 includes a container 1304a and a metal sealing plate 1304b that covers the SAW filter 1302 fixed to the top of the container 1304a so as to seal the container 1304a. Further, on the lower surface of the container 1304a, a metal terminal 1314c electrically connected to the metal sealing plate 1304b and a metal terminal 1314b electrically connected to the SAW filter 1302 are provided. The first electronic component 1314 thus configured is mounted on an element mounting substrate 1018 as shown in FIG. 11 with the metal sealing plate 1304b as the bottom surface.
　なお、上述の各電子部品は、内部にある水晶振動子やＳＡＷフィルタを金属製封止板により真空若しくは不活性ガスで気密封止されている。また、金属製封止板に好適な材料としては、例えば、鉄を主成分とするコバールを母体とし、表面に腐食（酸化）防止のためにニッケル、あるいはニッケル・金等のメッキ処理が施された材料が挙げられる。 Each electronic component described above is hermetically sealed with a quartz sealing plate or a SAW filter inside a vacuum or an inert gas by a metal sealing plate. In addition, as a suitable material for the metal sealing plate, for example, Kovar mainly composed of iron is used as a base material, and the surface is subjected to plating treatment of nickel or nickel / gold to prevent corrosion (oxidation). Materials.
　本実施の形態に係る電子部品としては、収容部材の内部に空間が形成されているため、水晶振動子を始めとする可動部品（可動部を有する部品）やＳＡＷフィルタを用いることもできる。このように、高周波で動作し振動する水晶振動子やＳＡＷフィルタ等を始めとする電子部品を備えた半導体モジュールであっても、素子搭載用基板１０１８の配線層のうち信号線への電磁ノイズを十分抑制することができる。 As the electronic component according to the present embodiment, since a space is formed inside the housing member, a movable component (a component having a movable portion) such as a crystal resonator or a SAW filter can be used. Thus, even in a semiconductor module including electronic components such as a crystal resonator and a SAW filter that operate and vibrate at a high frequency, electromagnetic noise to the signal line in the wiring layer of the element mounting substrate 1018 is reduced. It can be suppressed sufficiently.
　（第７の実施の形態）
　本実施の形態では、第１の電子部品において、前述の収容部材の金属端子が形成されている面の形状に特徴がある。図１３は、第７の実施の形態に係る半導体モジュールのうち第１の電子部品近傍の概略断面図である。図１４は、図１３に示す第１の電子部品の上面図である。なお、本実施の形態に係る半導体モジュールのうち半導体素子については第６の実施の形態と同様の構成のため、図を省略する。 (Seventh embodiment)
In the present embodiment, the first electronic component is characterized by the shape of the surface on which the metal terminal of the housing member is formed. FIG. 13 is a schematic cross-sectional view of the vicinity of the first electronic component in the semiconductor module according to the seventh embodiment. FIG. 14 is a top view of the first electronic component shown in FIG. Note that, in the semiconductor module according to the present embodiment, the semiconductor element has the same configuration as that of the sixth embodiment, so that the drawing is omitted.
　半導体モジュール１４１０は、半導体素子（不図示）と、第１の電子部品１４１４と、素子搭載用基板１４１８と、封止樹脂１４２０と、を備える。第１の電子部品１４１４は、例えば、水晶振動子として機能する部品である。第１の電子部品１４１４は、その下面が金属部材１４１４ａで構成されており、この金属部材１４１４ａが電磁シールドとして機能する。素子搭載用基板１４１８は、不図示の配線層が形成されているとともに半導体素子および第１の電子部品１４１４を搭載する。封止樹脂１４２０は、半導体素子および第１の電子部品１４１４を封止する。 The semiconductor module 1410 includes a semiconductor element (not shown), a first electronic component 1414, an element mounting board 1418, and a sealing resin 1420. The first electronic component 1414 is, for example, a component that functions as a crystal resonator. The lower surface of the first electronic component 1414 is composed of a metal member 1414a, and this metal member 1414a functions as an electromagnetic shield. The element mounting substrate 1418 has a wiring layer (not shown) and a semiconductor element and the first electronic component 1414 mounted thereon. The sealing resin 1420 seals the semiconductor element and the first electronic component 1414.
　そして、第１の電子部品１４１４は、金属部材１４１４ａが形成されている面を下面として素子搭載用基板１４１８上に搭載されている。また、金属部材１４１４ａは、はんだ１４２４により、素子搭載用基板１４１８の上面に形成されている金属ランド１４１８ｃと固着されている。これにより、第１の電子部品１４１４を素子搭載用基板１４１８に強固に固定することが可能となる。 The first electronic component 1414 is mounted on the element mounting substrate 1418 with the surface on which the metal member 1414a is formed as the lower surface. The metal member 1414a is fixed to the metal land 1418c formed on the upper surface of the element mounting substrate 1418 by the solder 1424. As a result, the first electronic component 1414 can be firmly fixed to the element mounting substrate 1418.
　第１の電子部品１４１４は、金属部材１４１４ａが形成されている面と反対側の面を構成する収容部材１４０４の表面に金属端子１４１４ｂが設けられている。一方、素子搭載用基板１４１８の上面には、パッド電極１４１８ｂが形成されており、そのパッド電極１４１８ｂと金属端子１４１４ｂとがボンディングワイヤ１４２６で接続されている。 In the first electronic component 1414, a metal terminal 1414b is provided on the surface of the housing member 1404 constituting the surface opposite to the surface on which the metal member 1414a is formed. On the other hand, a pad electrode 1418b is formed on the upper surface of the element mounting substrate 1418, and the pad electrode 1418b and the metal terminal 1414b are connected by a bonding wire 1426.
　収容部材１４０４は、その底面がおおよそ方形であり、４つの角部の頂点１４０４ａを斜めに切り取るように形成された切り欠き部１４０４ｂを有する。収容部材１４０４がセラミック等の誘電体で構成されている場合、このように、収容部材１４０４の上面の周縁部に切り欠き部１４０４ｂを形成することで、ボンディングワイヤ１４２６のループ形状をコンパクトにすることが可能となり、低背化および搭載面積の狭小化が可能となる。 The housing member 1404 has a substantially rectangular bottom surface, and has a notch 1404b formed so as to obliquely cut out the apexes 1404a of the four corners. When the housing member 1404 is made of a dielectric material such as ceramic, the loop shape of the bonding wire 1426 can be made compact by forming the notch 1404b in the peripheral portion of the upper surface of the housing member 1404 in this way. This makes it possible to reduce the height and reduce the mounting area.
　また、金属端子１４１４ｂは、切り欠き部１４０４ｂに沿って収容部材１４０４の角部を覆うような形状の斜面１４１４ｂ１を有する。換言すると、金属端子１４１４ｂは、切り欠き部１４０４ｂまで延在するように斜面１４１４ｂ１が形成されている。そのため、ボンディングワイヤ１４２６を斜面１４１４ｂ１と接触させるようにすることで、金属端子１４１４ｂとボンディングワイヤ１４２６とは、金属端子１４１４ｂの上面だけでなく斜面１４１４ｂ１においても導通することになり、接続信頼性が向上する。 Further, the metal terminal 1414b has an inclined surface 1414b1 shaped so as to cover the corner of the housing member 1404 along the notch 1404b. In other words, the metal terminal 1414b is formed with a slope 1414b1 so as to extend to the notch 1404b. Therefore, when the bonding wire 1426 is brought into contact with the inclined surface 1414b1, the metal terminal 1414b and the bonding wire 1426 are conducted not only on the upper surface of the metal terminal 1414b but also on the inclined surface 1414b1, thereby improving connection reliability. To do.
　また、ボンディングワイヤ１４２６は、通常は第１の電子部品１４１４の周縁部に接触しないように、金属端子１４１４ｂ側からパッド電極１４１８ｂ側への順で接続する。これに対して、本実施の形態では、ボンディングワイヤ１４２６を第１の電子部品１４１４の周縁部に接触させてもよいので、パッド電極１４１８ｂ側から金属端子１４１４ｂ側への順で接続することが可能となる。このため、さらなる低背化および搭載面積の狭小化を図ることができる。 Also, the bonding wire 1426 is normally connected in order from the metal terminal 1414b side to the pad electrode 1418b side so as not to contact the peripheral edge portion of the first electronic component 1414. In contrast, in the present embodiment, since the bonding wire 1426 may be brought into contact with the peripheral edge of the first electronic component 1414, it is possible to connect in order from the pad electrode 1418b side to the metal terminal 1414b side. It becomes. For this reason, it is possible to further reduce the height and reduce the mounting area.
　なお、図１２（ａ）～図１２（ｃ）に例示される電子部品のように、収容部材の内部に空間が形成されている場合、外部からの力（例えば、トランスファーモールド法における樹脂封入圧）により金属製封止板が撓む可能性がある。しかしながら、第６の実施の形態や第７の実施の形態に係る半導体モジュールでは、金属製封止板が素子搭載用基板と接触するように上下逆に電子部品が搭載されているため、金属製封止板の撓みが抑制される。つまり、金属製封止板の撓みに起因する収容部材の変形、ひいては収容部材の内部に収容されている水晶振動子における内部応力の発生が抑制される。その結果、内部応力による電子部品の性能の変化が抑制される。具体的には、電子部品が水晶振動子の場合、水晶振動子の発振周波数のオフセットが低減される。 When a space is formed inside the housing member as in the electronic parts illustrated in FIGS. 12A to 12C, an external force (for example, resin sealing pressure in the transfer molding method) ) May cause the metal sealing plate to bend. However, in the semiconductor modules according to the sixth embodiment and the seventh embodiment, the electronic components are mounted upside down so that the metal sealing plate is in contact with the element mounting substrate. The bending of the sealing plate is suppressed. That is, the deformation of the housing member due to the bending of the metal sealing plate, and hence the generation of internal stress in the crystal resonator housed inside the housing member is suppressed. As a result, changes in the performance of the electronic component due to internal stress are suppressed. Specifically, when the electronic component is a crystal resonator, the offset of the oscillation frequency of the crystal resonator is reduced.
　（第８の実施の形態）
　次に、上述の各実施の形態に係る半導体モジュールを備えた携帯機器について説明する。なお、携帯機器として携帯電話に搭載する例を示すが、例えば、個人用携帯情報端末（ＰＤＡ）、デジタルビデオカメラ（ＤＶＣ）、及びデジタルスチルカメラ（ＤＳＣ）といった電子機器であってもよい。 (Eighth embodiment)
Next, a portable device including the semiconductor module according to each of the above embodiments will be described. In addition, although the example mounted in a mobile telephone is shown as a portable apparatus, electronic devices, such as a personal digital assistant (PDA), a digital video camera (DVC), and a digital still camera (DSC), may be sufficient, for example.
　図１５は、上述の各実施の形態に係る半導体モジュールや回路モジュールを備えた携帯電話の構成を示す図である。携帯電話６００は、第１の筐体６０２と第２の筐体６０４が可動部６０６によって連結される構造になっている。第１の筐体６０２と第２の筐体６０４は可動部６０６を軸として回動可能である。第１の筐体６０２には文字や画像等の情報を表示する表示部６０８やスピーカ部６１０が設けられている。第２の筐体６０４には操作用ボタンなどの操作部６１２やマイク部６１４が設けられている。なお、前述の各実施の形態に係る半導体モジュールや回路モジュールはこうした携帯電話６００の内部に搭載されている。 FIG. 15 is a diagram illustrating a configuration of a mobile phone including the semiconductor module and the circuit module according to each of the above-described embodiments. The mobile phone 600 has a structure in which a first housing 602 and a second housing 604 are connected by a movable portion 606. The first housing 602 and the second housing 604 can rotate around the movable portion 606. The first housing 602 is provided with a display portion 608 and a speaker portion 610 that display information such as characters and images. The second housing 604 is provided with an operation unit 612 such as operation buttons and a microphone unit 614. Note that the semiconductor modules and circuit modules according to the above-described embodiments are mounted inside such a mobile phone 600.
　図１６は、図１５に示した携帯電話の部分断面図（第１の筐体６０２の断面図）である。上述の各実施の形態に係る、例えば、半導体モジュール１０は、その裏面側に設けられたはんだバンプ６１６を介してプリント基板６１８に搭載され、こうしたプリント基板６１８を介して表示部６０８などと電気的に接続されている。また、半導体モジュール１０の裏面側（はんだバンプ６１６とは反対側の面）には金属基板などの放熱基板６２０が設けられ、例えば、半導体モジュールから発生する熱を第１の筐体６０２内部にこもらせることなく、効率的に第１の筐体６０２の外部に放熱することができるようになっている。 FIG. 16 is a partial cross-sectional view (cross-sectional view of the first housing 602) of the mobile phone shown in FIG. For example, the semiconductor module 10 according to each of the above-described embodiments is mounted on the printed circuit board 618 via the solder bumps 616 provided on the back side thereof, and is electrically connected to the display unit 608 and the like via the printed circuit board 618. It is connected to the. Further, a heat radiating substrate 620 such as a metal substrate is provided on the back surface side (the surface opposite to the solder bump 616) of the semiconductor module 10, and for example, heat generated from the semiconductor module is collected inside the first housing 602. It is possible to efficiently dissipate heat to the outside of the first housing 602 without making it.
　上述の第６～第８の実施の形態では、半導体素子と電子部品が搭載された半導体モジュールの構成を前提に説明したが、半導体素子を搭載せずに電子部品が搭載された回路モジュールの構成であってもよい。以上、第６～第８の実施の形態に係る半導体モジュールや携帯機器に例示される発明をまとめると以下のように表すことができる。 In the above sixth to eighth embodiments, the description has been made on the premise of the configuration of the semiconductor module in which the semiconductor element and the electronic component are mounted. However, the configuration of the circuit module in which the electronic component is mounted without mounting the semiconductor element. It may be. The inventions exemplified in the semiconductor modules and portable devices according to the sixth to eighth embodiments can be summarized as follows.
　（１）配線層を有する配線基板と、
　前記配線基板上に搭載された半導体素子と、
　前記配線基板上に搭載され、内部の空間に素子部が設けられた電子部品と、
　前記半導体素子および前記電子部品を封止する封止樹脂と、を備え、
　前記電子部品は、前記配線基板との間に前記電子部品の下面を覆う金属部材を有していることを特徴とする半導体モジュール。
（２）前記電子部品は、前記金属部材と反対側の面に金属端子を有しており、前記配線層のうち信号線を構成する部分と前記金属端子とがボンディングワイヤで接続されていることを特徴とする（１）に記載の半導体モジュール。
（３）前記ボンディングワイヤは、前記電子部品の周縁部と接触していることを特徴とする（２）に記載の半導体モジュール。
（４）前記電子部品は、その上面の周縁部に切り欠き部を有し、前記金属端子は、前記切り欠き部まで延在するとともに延在した部分が前記ボンディングワイヤと接触していることを特徴とする（２）に記載の半導体モジュール。
（５）前記配線層は、前記半導体素子と導通する信号線が前記金属部材の下方を経由するように構成されていることを特徴とする（１）乃至（４）のいずれかに記載の半導体モジュール。
（６）前記金属部材は、前記配線層のうち固定電位が入力される部分と導通していることを特徴とする（１）乃至（５）のいずれかに記載の半導体モジュール。
（７）（１）乃至（６）のいずれかに記載の半導体モジュールを搭載したことを特徴とする携帯機器。 (1) a wiring board having a wiring layer;
A semiconductor element mounted on the wiring board;
An electronic component mounted on the wiring board and provided with an element portion in an internal space;
Sealing resin for sealing the semiconductor element and the electronic component,
The electronic component includes a metal member that covers a lower surface of the electronic component between the electronic component and the wiring board.
(2) The electronic component has a metal terminal on a surface opposite to the metal member, and a portion constituting the signal line in the wiring layer and the metal terminal are connected by a bonding wire. (1) The semiconductor module according to (1).
(3) The semiconductor module according to (2), wherein the bonding wire is in contact with a peripheral portion of the electronic component.
(4) The electronic component has a notch at the peripheral edge of the upper surface thereof, and the metal terminal extends to the notch and the extended portion is in contact with the bonding wire. The semiconductor module according to (2), which is characterized.
(5) The semiconductor according to any one of (1) to (4), wherein the wiring layer is configured such that a signal line that is electrically connected to the semiconductor element passes below the metal member. module.
(6) The semiconductor module according to any one of (1) to (5), wherein the metal member is electrically connected to a portion of the wiring layer to which a fixed potential is input.
(7) A portable device comprising the semiconductor module according to any one of (1) to (6).
　以上、本発明を上述の各実施の形態を参照して説明したが、本発明は上述の各実施の形態に限定されるものではなく、各実施の形態の構成を適宜組み合わせたものや置換したものについても本発明に含まれるものである。また、当業者の知識に基づいて各実施の形態における半導体モジュールの製造方法の順番を適宜組み替えることや、素子搭載用基板や半導体モジュールにおいて各種の設計変更等の変形を各実施の形態に対して加えることも可能であり、そのような変形が加えられた実施の形態も本発明の範囲に含まれうる。 As described above, the present invention has been described with reference to the above-described embodiments. However, the present invention is not limited to the above-described embodiments, and the configurations of the embodiments are appropriately combined or replaced. Those are also included in the present invention. Further, based on the knowledge of those skilled in the art, the order of the manufacturing method of the semiconductor module in each embodiment is appropriately changed, and various design changes and the like in the element mounting substrate and the semiconductor module are modified with respect to each embodiment. Embodiments to which such modifications are added can also be included in the scope of the present invention.
　１０　半導体モジュール、　１２　素子搭載用基板、　１２ａ　パッド電極、　１２ｂ　パッド電極、　１４　水晶振動子、　１６　収容部材、　１６ａ　金属部材、　１８　半導体素子、　１８ａ　パッド電極、　２０　封止樹脂、　２２　ボンディングワイヤ、　２４　バンプ、　６００　携帯電話。 10 semiconductor module, 12 element mounting substrate, 12a pad electrode, 12b pad electrode, 14 crystal resonator, 16 housing member, 16a metal member, 18 semiconductor element, 18a pad electrode, 20 sealing resin, 22 bonding wire, 24 bump 600 mobile phones.

Claims (10)

  1. 　基板と、
    　前記基板上に搭載された電子部品と、
    　上面の少なくとも一部が金属部材で構成されている収容部材であって、前記基板上において、前記電子部品との間に空間が形成されるように該電子部品を収容する収容部材と、
    　前記金属部材を覆うように前記収容部材の上に積層された板状部材と、
    　前記収容部材および前記板状部材を封止する封止樹脂と、
    　を備えることを特徴とする回路モジュール。     A substrate,
    Electronic components mounted on the substrate;
    A housing member having at least a part of an upper surface made of a metal member, and housing the electronic component on the substrate so that a space is formed between the electronic component; and
    A plate-like member laminated on the housing member so as to cover the metal member;
    Sealing resin for sealing the housing member and the plate-like member;
    A circuit module comprising:
  2. 　前記板状部材は、前記封止樹脂と前記金属部材との密着性よりも、前記封止樹脂との密着性が高い材料で表面が構成されていることを特徴とする請求項１に記載の回路モジュール。 2. The surface of the plate-like member is made of a material having higher adhesiveness with the sealing resin than adhesiveness between the sealing resin and the metal member. Circuit module.
  3. 　前記板状部材は、前記金属部材の撓みを抑制する剛性を有することを特徴とする請求項１または２に記載の回路モジュール。 3. The circuit module according to claim 1, wherein the plate-like member has rigidity for suppressing bending of the metal member.
  4. 　前記板状部材は、半導体素子であることを特徴とする請求項１乃至３のいずれかに記載の回路モジュール。 4. The circuit module according to claim 1, wherein the plate-like member is a semiconductor element.
  5. 　前記電子部品は、水晶振動子であることを特徴とする請求項１乃至４のいずれかに記載の回路モジュール。 5. The circuit module according to claim 1, wherein the electronic component is a crystal resonator.
  6. 　前記基板に形成された配線層を更に備え、
    　前記金属部材は、前記配線層のうち固定電位が入力される部分と導通していることを特徴とする請求項１乃至５のいずれか１項に記載の回路モジュール。     A wiring layer formed on the substrate;
    The circuit module according to claim 1, wherein the metal member is electrically connected to a portion of the wiring layer to which a fixed potential is input.
  7. 　前記板状部材は、前記収容部材の上面を全て覆うように積層されていることを特徴とする請求項１乃至６のいずれか１項に記載の回路モジュール。 The circuit module according to any one of claims 1 to 6, wherein the plate-like member is laminated so as to cover the entire upper surface of the housing member.
  8. 　基板と、
    　前記基板上に搭載された電子部品と、
    　前記基板上において、前記電子部品との間に空間が形成されるように該電子部品を収容する収容部材と、
    　前記収容部材を封止する封止樹脂と、を備え、
    　前記収容部材は、少なくとも一面が金属部材で構成され、該金属部材と前記基板とが対向するように該基板に搭載されていることを特徴とする回路モジュール。     A substrate,
    Electronic components mounted on the substrate;
    A housing member that houses the electronic component such that a space is formed between the electronic component and the substrate;
    A sealing resin for sealing the housing member,
    The circuit module is characterized in that at least one surface of the housing member is made of a metal member and is mounted on the substrate so that the metal member and the substrate face each other.
  9. 　電子部品と、上面の少なくとも一部が金属部材で構成されている収容部材であって、前記電子部品との間に空間が形成されるように該電子部品を収容する収容部材と、を基板の上に搭載する工程と、
    　前記金属部材を覆うように前記収容部材の上に板状部材を積層する工程と、
    　前記収容部材と前記板状部材を封止樹脂で封止する工程と、
    　を備えることを特徴とする回路モジュールの製造方法。     An electronic component and a housing member in which at least a part of the upper surface is made of a metal member, and the housing member that houses the electronic component so that a space is formed between the electronic component and the electronic component. The process of mounting on top,
    Laminating a plate-like member on the housing member so as to cover the metal member;
    Sealing the housing member and the plate-shaped member with a sealing resin;
    A method for manufacturing a circuit module, comprising:
  10. 　請求項１乃至８のいずれか１項に記載の半導体モジュールを搭載したことを特徴とする携帯機器。 A portable device comprising the semiconductor module according to any one of claims 1 to 8.
PCT/JP2009/002937 2008-06-27 2009-06-26 Circuit module, method for manufacturing circuit module, and portable apparatus WO2009157208A1 (en)

Applications Claiming Priority (4)

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JP2008-169238 2008-06-27
JP2008169238A JP2010010480A (en) 2008-06-27 2008-06-27 Semiconductor module and method of manufacturing the same, and portable apparatus
JP2008-202432 2008-08-05
JP2008202432A JP2010040789A (en) 2008-08-05 2008-08-05 Semiconductor module and portable apparatus

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018105201A1 (en) * 2016-12-08 2018-06-14 株式会社村田製作所 Composite component and structure for mounting same
US10742169B2 (en) 2017-11-27 2020-08-11 Seiko Epson Corporation Oscillator, electronic apparatus, and vehicle
JP2020137023A (en) * 2019-02-22 2020-08-31 セイコーエプソン株式会社 Oscillator, electronic equipment and mobile object
JP2020137024A (en) * 2019-02-22 2020-08-31 セイコーエプソン株式会社 Oscillator, electronic equipment and mobile object
US10784817B2 (en) 2018-10-29 2020-09-22 Seiko Epson Corporation Oscillator, electronic apparatus and vehicle
JPWO2021009970A1 (en) * 2019-07-17 2021-01-21
JP7424941B2 (en) 2020-08-19 2024-01-30 日本電波工業株式会社 Crystal oscillator with constant temperature oven

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006050529A (en) * 2004-02-17 2006-02-16 Seiko Epson Corp Piezoelectric oscillator and its manufacturing method
JP2006054784A (en) * 2004-08-16 2006-02-23 Seiko Epson Corp Piezoelectric oscillator and method of manufacturing the same
JP2009027451A (en) * 2007-07-19 2009-02-05 Nippon Dempa Kogyo Co Ltd Surface-mounting type crystal oscillator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006050529A (en) * 2004-02-17 2006-02-16 Seiko Epson Corp Piezoelectric oscillator and its manufacturing method
JP2006054784A (en) * 2004-08-16 2006-02-23 Seiko Epson Corp Piezoelectric oscillator and method of manufacturing the same
JP2009027451A (en) * 2007-07-19 2009-02-05 Nippon Dempa Kogyo Co Ltd Surface-mounting type crystal oscillator

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018105201A1 (en) * 2016-12-08 2018-06-14 株式会社村田製作所 Composite component and structure for mounting same
CN110036565A (en) * 2016-12-08 2019-07-19 株式会社村田制作所 Composite component and its mounting structure
JPWO2018105201A1 (en) * 2016-12-08 2019-08-08 株式会社村田製作所 Composite parts and their mounting structures
US11509289B2 (en) 2016-12-08 2022-11-22 Murata Manufacturing Co., Ltd. Composite component and mounting structure therefor
US10742169B2 (en) 2017-11-27 2020-08-11 Seiko Epson Corporation Oscillator, electronic apparatus, and vehicle
US10784817B2 (en) 2018-10-29 2020-09-22 Seiko Epson Corporation Oscillator, electronic apparatus and vehicle
JP2020137023A (en) * 2019-02-22 2020-08-31 セイコーエプソン株式会社 Oscillator, electronic equipment and mobile object
JP2020137024A (en) * 2019-02-22 2020-08-31 セイコーエプソン株式会社 Oscillator, electronic equipment and mobile object
JPWO2021009970A1 (en) * 2019-07-17 2021-01-21
WO2021009970A1 (en) * 2019-07-17 2021-01-21 株式会社村田製作所 Semiconductor module
JP7143951B2 (en) 2019-07-17 2022-09-29 株式会社村田製作所 semiconductor module
JP7424941B2 (en) 2020-08-19 2024-01-30 日本電波工業株式会社 Crystal oscillator with constant temperature oven

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