WO2009141595A3 - Photovoltaic cell - Google Patents

Photovoltaic cell Download PDF

Info

Publication number
WO2009141595A3
WO2009141595A3 PCT/GB2009/001242 GB2009001242W WO2009141595A3 WO 2009141595 A3 WO2009141595 A3 WO 2009141595A3 GB 2009001242 W GB2009001242 W GB 2009001242W WO 2009141595 A3 WO2009141595 A3 WO 2009141595A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanotubes
efficiencies
charge
silicon
cells
Prior art date
Application number
PCT/GB2009/001242
Other languages
French (fr)
Other versions
WO2009141595A2 (en
Inventor
Yanqiu Zhu
Yimin Zhau
Yi Jia
Jinquan Wei
Qinke Shu
Kunlin Wang
Hongwei Zhu
Dehai Wu
Original Assignee
The University Of Nottingham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The University Of Nottingham filed Critical The University Of Nottingham
Priority to EP09750073A priority Critical patent/EP2294639A2/en
Publication of WO2009141595A2 publication Critical patent/WO2009141595A2/en
Publication of WO2009141595A3 publication Critical patent/WO2009141595A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

We developed carbon nanotube-on-silicon heterojunction solar (photovoltaic) cells are provided with moderate efficiencies (>7%) and excellent air stability by integrating nanotechnology with silicon technology. The manufacturing process is simple and scalable, involving solution transfer of a uniform, single-layer or multilayer film of carbon nanotubes onto silicon surface to form heterojunctions (p-n) with high density, and does not require separation of metallic and semiconducting nanotubes. The nanotubes in the cells contribute to several processes that are critical for improving the efficiency, as a heterojunction component for charge separation, as a highly- conductive percolated network for charge transport, and as a transparent electrode for light illumination and charge collection. Control experiments indicate that the presence of semiconducting nanotubes is important in boosting the current densities and efficiencies.
PCT/GB2009/001242 2008-05-19 2009-05-19 Photovoltaic cell WO2009141595A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09750073A EP2294639A2 (en) 2008-05-19 2009-05-19 Photovoltaic cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0809034.2 2008-05-19
GBGB0809034.2A GB0809034D0 (en) 2008-05-19 2008-05-19 Solar cells

Publications (2)

Publication Number Publication Date
WO2009141595A2 WO2009141595A2 (en) 2009-11-26
WO2009141595A3 true WO2009141595A3 (en) 2010-01-28

Family

ID=39596103

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2009/001242 WO2009141595A2 (en) 2008-05-19 2009-05-19 Photovoltaic cell

Country Status (3)

Country Link
EP (1) EP2294639A2 (en)
GB (1) GB0809034D0 (en)
WO (1) WO2009141595A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10177314B2 (en) 2009-12-03 2019-01-08 Nokia Technologies Oy Apparatus, methods and devices
WO2011139754A2 (en) 2010-04-27 2011-11-10 University Of Florida Research Foundation, Inc. Electronic gate enhancement of schottky junction solar cells
RU2577174C1 (en) * 2014-12-18 2016-03-10 Общество с ограниченной ответственностью "Энергоэкотех" Coating for photovoltaic cell and method of making same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060186502A1 (en) * 2005-02-24 2006-08-24 Fuji Xerox Co., Ltd. Solar cell using carbon nanotubes and process for producing the same
WO2006093720A2 (en) * 2005-03-02 2006-09-08 Wisconsin Alumni Research Foundation Carbon nanotube schottky barrier photovoltaic cell
WO2007037343A1 (en) * 2005-09-29 2007-04-05 Nu Eco Engineering Co., Ltd. Diode and photovoltaic element using carbon nanostructure
WO2008001998A1 (en) * 2006-06-29 2008-01-03 Korea Advanced Institute Of Science And Technology Method for manufacturing a transparent conductive electrode using carbon nanotube films
WO2008051205A2 (en) * 2005-10-14 2008-05-02 Eikos, Inc. Carbon nanotube use in solar cell applications

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2099075B1 (en) * 2008-03-07 2015-09-09 Tsing Hua University Photovoltaic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060186502A1 (en) * 2005-02-24 2006-08-24 Fuji Xerox Co., Ltd. Solar cell using carbon nanotubes and process for producing the same
WO2006093720A2 (en) * 2005-03-02 2006-09-08 Wisconsin Alumni Research Foundation Carbon nanotube schottky barrier photovoltaic cell
WO2007037343A1 (en) * 2005-09-29 2007-04-05 Nu Eco Engineering Co., Ltd. Diode and photovoltaic element using carbon nanostructure
WO2008051205A2 (en) * 2005-10-14 2008-05-02 Eikos, Inc. Carbon nanotube use in solar cell applications
WO2008001998A1 (en) * 2006-06-29 2008-01-03 Korea Advanced Institute Of Science And Technology Method for manufacturing a transparent conductive electrode using carbon nanotube films

Also Published As

Publication number Publication date
EP2294639A2 (en) 2011-03-16
WO2009141595A2 (en) 2009-11-26
GB0809034D0 (en) 2008-06-25

Similar Documents

Publication Publication Date Title
Cao et al. Towards high efficiency inverted Sb2Se3 thin film solar cells
Lin et al. Flexible photovoltaic technologies
Yoon et al. High-performance hybrid cell based on an organic photovoltaic device and a direct current piezoelectric nanogenerator
WO2012106002A8 (en) Multijunction hybrid solar cell with parallel connection and nanomaterial charge collecting interlayers
WO2009067526A3 (en) High-efficiency, high current solar cell and solar module
CN103296123B (en) P-type carbon quantum dot/N-type silicon nanowire array heterojunction solar battery and preparation method thereof
WO2009027977A3 (en) Photovoltaic dye cell having an improved counter-electrode
CN101127371A (en) A nano structure thin film solar battery and its making method
CN102437226B (en) Carbon nanotube-silicon film laminated solar battery and preparation method thereof
CN112898610A (en) Flexible metal-organic framework/gelatin composite film and preparation method and application thereof
US20130298976A1 (en) Solar cell and manufacturing method thereof
He et al. Graphene sheets anchored with high density TiO 2 nanocrystals and their application in quantum dot-sensitized solar cells
WO2009141595A3 (en) Photovoltaic cell
CN208368522U (en) A kind of small-power solar battery group
CN101820012A (en) Silicon solar cell with surface assembled with carbon nano tube
Zhang et al. High weight-specific power density of thin-film amorphous silicon solar cells on graphene papers
CN206364023U (en) A kind of grid line structure of IBC batteries
CN203277404U (en) Solar cell with hexagonal frame
Dai et al. Nanoparticle-based screen printing of copper zinc tin sulfide thin film as photocathode for quantum dot sensitized solar cell
CN206619600U (en) A kind of solar battery sheet component
CN104377254A (en) Large-current concentrating solar cell chip
CN209544363U (en) A kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element
CN206259387U (en) A kind of stacked solar cell, cascade solar cell
CN208157422U (en) A kind of solar battery sheet and photovoltaic module
CN207303141U (en) One kind is used for the recoverable thermo-electric converting material of low-grade heat

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009750073

Country of ref document: EP