WO2009136718A3 - 반도체 소자 및 그 제조방법 - Google Patents
반도체 소자 및 그 제조방법 Download PDFInfo
- Publication number
- WO2009136718A3 WO2009136718A3 PCT/KR2009/002353 KR2009002353W WO2009136718A3 WO 2009136718 A3 WO2009136718 A3 WO 2009136718A3 KR 2009002353 W KR2009002353 W KR 2009002353W WO 2009136718 A3 WO2009136718 A3 WO 2009136718A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor element
- production method
- method therefor
- composition
- growth substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/990,943 US8633508B2 (en) | 2008-05-04 | 2009-05-04 | Semiconductor element and a production method therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0041605 | 2008-05-04 | ||
KR1020080041605A KR20090115826A (ko) | 2008-05-04 | 2008-05-04 | 그룹 3족 질화물계 반도체 소자용 버퍼층 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009136718A2 WO2009136718A2 (ko) | 2009-11-12 |
WO2009136718A3 true WO2009136718A3 (ko) | 2010-01-14 |
Family
ID=41265144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/002353 WO2009136718A2 (ko) | 2008-05-04 | 2009-05-04 | 반도체 소자 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8633508B2 (ko) |
KR (1) | KR20090115826A (ko) |
WO (1) | WO2009136718A2 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5966289B2 (ja) * | 2011-09-16 | 2016-08-10 | 富士通株式会社 | 半導体基板の製造方法及び半導体装置の製造方法 |
KR102002898B1 (ko) | 2012-09-04 | 2019-07-23 | 삼성전자 주식회사 | 반도체 버퍼 구조체 및 이를 포함하는 반도체 소자 |
KR102301861B1 (ko) * | 2019-02-28 | 2021-09-14 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치 |
WO2020175971A1 (ko) * | 2019-02-28 | 2020-09-03 | 안상정 | 고순도 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
KR102227213B1 (ko) * | 2019-04-19 | 2021-03-12 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
KR102315908B1 (ko) * | 2019-03-25 | 2021-10-21 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치 |
KR102480141B1 (ko) * | 2020-09-04 | 2022-12-22 | 웨이브로드 주식회사 | 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자 |
KR20210005989A (ko) * | 2021-01-08 | 2021-01-15 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0746670B2 (ja) * | 1991-06-07 | 1995-05-17 | 日本電気株式会社 | 薄膜キャパシタ |
JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4978052A (en) * | 1986-11-07 | 1990-12-18 | Olin Corporation | Semiconductor die attach system |
US5262920A (en) * | 1991-05-16 | 1993-11-16 | Nec Corporation | Thin film capacitor |
-
2008
- 2008-05-04 KR KR1020080041605A patent/KR20090115826A/ko not_active Application Discontinuation
-
2009
- 2009-05-04 WO PCT/KR2009/002353 patent/WO2009136718A2/ko active Application Filing
- 2009-05-04 US US12/990,943 patent/US8633508B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0746670B2 (ja) * | 1991-06-07 | 1995-05-17 | 日本電気株式会社 | 薄膜キャパシタ |
JP3813740B2 (ja) * | 1997-07-11 | 2006-08-23 | Tdk株式会社 | 電子デバイス用基板 |
Non-Patent Citations (1)
Title |
---|
ALI, I ET AL.: "Properties of semiconducting rhenium silicide thin film grown epitaxially on silicon (111)", APPLIED SURFACE SCIENCE, vol. 102, August 1996 (1996-08-01), pages 147 - 150 * |
Also Published As
Publication number | Publication date |
---|---|
KR20090115826A (ko) | 2009-11-09 |
WO2009136718A2 (ko) | 2009-11-12 |
US20110140102A1 (en) | 2011-06-16 |
US8633508B2 (en) | 2014-01-21 |
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