WO2009134865A2 - Endpoint detection in chemical mechanical polishing using multiple spectra - Google Patents
Endpoint detection in chemical mechanical polishing using multiple spectra Download PDFInfo
- Publication number
- WO2009134865A2 WO2009134865A2 PCT/US2009/042085 US2009042085W WO2009134865A2 WO 2009134865 A2 WO2009134865 A2 WO 2009134865A2 US 2009042085 W US2009042085 W US 2009042085W WO 2009134865 A2 WO2009134865 A2 WO 2009134865A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- spectra
- polishing
- substrate
- spectrum
- differences
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to generally to spectrographic monitoring of a substrate during chemical mechanical polishing.
- An integrated circuit is typically formed on a substrate by the sequential deposition of conductive, semiconductive, or insulative layers on a silicon wafer.
- One fabrication step involves depositing a filler layer over a non-planar surface and planarizing the filler layer.
- the filler layer is planarized until the top surface of a patterned layer is exposed.
- a conductive filler layer for example, can be deposited on a patterned insulative layer to fill the trenches or holes in the insulative layer.
- the portions of the conductive layer remaining between the raised pattern of the insulative layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate.
- the filler layer is planarized until a predetermined thickness is left over the non planar surface.
- planarization of the substrate surface is usually required for photolithography.
- CMP Chemical mechanical polishing
- This planarization method typically requires that the substrate be mounted on a carrier or polishing head.
- the exposed surface of the substrate is typically placed against a rotating polishing disk pad or belt pad.
- the polishing pad can be either a standard pad or a fixed abrasive pad.
- a standard pad has a durable roughened surface, whereas a fixed-abrasive pad has abrasive particles held in a containment media.
- the carrier head provides a controllable load on the substrate to push it against the polishing pad.
- a polishing liquid, such as a slurry with abrasive particles, is typically supplied to the surface of the polishing pad.
- CMP CMP determining whether the polishing process is complete, i.e., whether a substrate layer has been planarized to a desired flatness or thickness, or when a desired amount of material has been removed.
- Overpolishing (removing too much) of a conductive layer or film leads to increased circuit resistance.
- underpolishing (removing too little) of a conductive layer leads to electrical shorting.
- Variations in the initial thickness of the substrate layer, the slurry composition, the polishing pad condition, the relative speed between the polishing pad and the substrate, and the load on the substrate can cause variations in the material removal rate. These variations cause variations in the time needed to reach the polishing endpoint. Therefore, the polishing endpoint cannot be determined merely as a function of polishing time.
- a computer implemented method includes obtaining at least one current spectrum with an in-situ optical monitoring system, comparing the current spectrum to a plurality of different reference spectra, and determining based on the comparing whether a polishing endpoint has been achieved for a substrate having an outermost layer undergoing polishing.
- the current spectrum is a spectrum of light reflected from a substrate having an outermost layer undergoing polishing and at least one underlying layer.
- the plurality of reference spectra represent spectra of light reflected from substrates with outermost layers having the same thickness and underlying layers having different thicknesses. Implementations can include one or more of the following. Determining whether the polishing endpoint has been achieved may include calculating differences between the current spectrum and the reference spectra.
- the endpoint detection algorithm may include determining whether the difference trace has reached a minimum. Determining whether the difference trace has reached a minimum may include calculating a slope of the difference trace or determining whether the difference trace has risen to a threshold value above the minimum.
- the reference spectra may be generated empirically or generated from theory.
- a computer program product encoded on a tangible program carrier, operable to cause data processing apparatus to perform operations comprising the steps of the method above.
- the term substrate can include, for example, a product substrate (e.g., which includes multiple memory or processor dies), a test substrate, a bare substrate, and a gating substrate.
- the substrate can be at various stages of integrated circuit fabrication, e.g., the substrate can be a bare wafer, or it can include one or more deposited and/or patterned layers.
- the term substrate can include circular disks and rectangular sheets. Possible advantages of implementations of the invention can include one or more of the following.
- the endpoint detection system can be less sensitive to variations between substrates in the underlying layers or pattern, and thus reliability of the endpoint system can be improved.
- the use of multiple reference spectra improves accuracy in endpoint determination by providing a difference or endpoint trace that is generally smoother than a trace generated by using a single reference-spectrum technique.
- FIG. 1 shows a substrate.
- FIG. 2 shows a chemical mechanical polishing apparatus.
- FIG. 3 is an overhead view of a polishing pad and shows locations where in-situ measurements are taken.
- FIG. 4 is a flow diagram of determining a polishing endpoint.
- FIG. 5 illustrates a difference trace from a spectrographic monitoring system.
- FIG. 6 is a flow diagram of another implementation of determining a polishing endpoint.
- Like reference numbers and designations in the various drawings indicate like elements.
- a substrate 10 can include a wafer 12, an outermost layer 14 that will undergo polishing, and one or more underlying layers 16, some of which are typically patterned, between the outermost layer 16 and the wafer 12.
- One potential problem with spectrographic endpoint detection during chemical mechanical polishing is that the thickness(es) of the underlying layer(s) can vary from substrate to substrate. As a result, substrates in which the outermost layer has the same thickness can actually reflect different spectra, depending on the underlying layer(s). Consequently, a target spectrum used to trigger a polishing endpoint for some substrates may not function properly for other substrates, e.g., if the underlying layers have different thicknesses.
- FIG. 2 shows a polishing apparatus 20 operable to polish a substrate 10.
- the polishing apparatus 20 includes a rotatable disk-shaped platen 24, on which a polishing pad 30 is situated.
- the platen is operable to rotate about axis 25.
- a motor can turn a drive shaft 22 to rotate the platen 24.
- Optical access 36 through the polishing pad is provided by including an aperture (i.e., a hole that runs through the pad) or a solid window.
- the solid window can be secured to the polishing pad, although in some implementations the solid window can be supported on the platen 24 and project into an aperture in the polishing pad.
- the polishing pad 30 is usually placed on the platen 24 so that the aperture or window overlies an optical head 53 situated in a recess 26 of the platen 24.
- the optical head 53 consequently has optical access through the aperture or window to a substrate being polished. The optical head is further described below.
- the polishing apparatus 20 includes a combined slurry/rinse arm 39.
- the arm 39 is operable to dispense a polishing liquid 38, such as a slurry.
- the polishing apparatus includes a slurry port operable to dispense slurry onto polishing pad 30.
- the polishing apparatus 20 includes a carrier head 70 operable to hold the substrate 10 against the polishing pad 30.
- the carrier head 70 is suspended from a support structure 72, for example, a carousel, and is connected by a carrier drive shaft 74 to a carrier head rotation motor 76 so that the carrier head can rotate about an axis 71.
- the carrier head 70 can oscillate laterally in a radial slot formed in the support structure 72. In operation, the platen is rotated about its central axis 25, and the carrier head is rotated about its central axis 71 and translated laterally across the top surface of the polishing pad.
- the polishing apparatus also includes an optical monitoring system, which can be used to determine a polishing endpoint as discussed below.
- the optical monitoring system includes a light source 51 and a light detector 52. Light passes from the light source 51, through the optical access 36 in the polishing pad 30, impinges and is reflected from the substrate 10 back through the optical access 36, and travels to the light detector 52.
- a bifurcated optical cable 54 can be used to transmit the light from the light source 51 to the optical access 36 and back from the optical access 36 to the light detector 52.
- the bifurcated optical cable 54 can include a "trunk” 55 and two "branches" 56 and 58.
- the platen 24 includes the recess 26, in which the optical head 53 is situated.
- the optical head 53 holds one end of the trunk 55 of the bifurcated fiber cable 54, which is configured to convey light to and from a substrate surface being polished.
- the optical head 53 can include one or more lenses or a window overlying the end of the bifurcated fiber cable 54.
- the optical head 53 can merely hold the end of the trunk 55 adjacent the solid window in the polishing pad.
- the optical head 53 can hold the above described nozzles of the flushing system.
- the optical head 53 can be removed from the recess 26 as required, for example, to effect preventive or corrective maintenance.
- the platen includes a removable in-situ monitoring module 50.
- the in-situ monitoring module 50 can include one or more of the following: the light source 51, the light detector 52, and circuitry for sending and receiving signals to and from the light source 51 and light detector 52.
- the output of the detector 52 can be a digital electronic signal that passes through a rotary coupler, e.g., a slip ring, in the drive shaft 22 to the controller for the optical monitoring system.
- the light source can be turned on or off in response to control commands in digital electronic signals that pass from the controller through the rotary coupler to the module 50.
- the in-situ monitoring module can also hold the respective ends of the branch portions 56 and 58 of the bifurcated optical fiber 54.
- the light source is operable to transmit light, which is conveyed through the branch 56 and out the end of the trunk 55 located in the optical head 53, and which impinges on a substrate being polished. Light reflected from the substrate is received at the end of the trunk 55 located in the optical head 53 and conveyed through the branch 58 to the light detector 52.
- the bifurcated fiber cable 54 is a bundle of optical fibers.
- the bundle includes a first group of optical fibers and a second group of optical fibers. An optical fiber in the first group is connected to convey light from the light source 51 to a substrate surface being polished.
- An optical fiber in the second group is connected to received light reflecting from the substrate surface being polished and convey the received light to a light detector.
- the optical fibers can be arranged so that the optical fibers in the second group form an X like shape that is centered on the longitudinal axis of the bifurcated optical fiber 54 (as viewed in a cross section of the bifurcated fiber cable 54).
- the optical fibers in the second group can form V like shapes that are mirror images of each other.
- a suitable bifurcated optical fiber is available from Verity Instruments, Inc. of Carrollton, Texas.
- the light source 51 is operable to emit white light.
- the white light emitted includes light having wavelengths of 200 - 800 nanometers.
- a suitable light source is a xenon lamp or a xenon mercury lamp.
- the light detector 52 can be a spectrometer.
- a spectrometer is basically an optical instrument for measuring intensity of light over a portion of the electromagnetic spectrum.
- a suitable spectrometer is a grating spectrometer. Typical output for a spectrometer is the intensity of the light as a function of wavelength.
- the light source 51 and light detector 52 are connected to a computing device operable to control their operation and to receive their signals.
- the computing device can include a microprocessor situated near the polishing apparatus, e.g., a personal computer.
- the computing device can, for example, synchronize activation of the light source 51 with the rotation of the platen 24.
- the computer can cause the light source 51 to emit a series of flashes starting just before and ending just after the substrate 10 passes over the in-situ monitoring module.
- Each of points 301-311 depicted represents a location where light from the in-situ monitoring module impinged and reflected off.
- the computer can cause the light source 51 to emit light continuously starting just before and ending just after the substrate 10 passes over the in-situ monitoring module.
- the signal from the detector can be integrated over a sampling period to generate spectra measurements at a sampling frequency.
- each time the substrate 10 passes over the monitoring module the alignment of the substrate with the monitoring module can be different than in the previous pass.
- spectra are obtained from different radii on the substrate. That is, some spectra are obtained from locations closer to the center of the substrate and some are closer to the edge.
- a sequence of spectra can be obtained over time.
- the computing device can receive, for example, a signal that carries information describing a spectrum of the light received by the light detector 52 for a particular flash of the light source or time frame of the detector.
- this spectrum is a spectrum measured in-situ during polishing.
- the spectrum of light reflected from the substrate 10 evolves as polishing progresses due to changes in the thickness of the outermost layer, thus yielding a sequence of time-varying spectra. Moreover, particular spectra are exhibited by particular thicknesses of the layer stack.
- the computing device can process the signal to determine an endpoint of a polishing step.
- the computing device can execute logic that determines, based on the measured spectra, when an endpoint has been reached.
- the computing device can compare the measured spectra to multiple reference spectra, and uses the results of the comparison to determine when an endpoint has been reached.
- a reference spectrum is a predefined spectrum generated prior to polishing of the substrate.
- a reference spectrum can have a pre-defined association, i.e., defined prior to the polishing operation, with a value of a substrate property, such as a thickness of the outermost layer.
- a reference spectrum can be generated empirically, e.g., by measuring the spectrum from a test substrate having a known layer thicknesses, or generated from theory.
- a reference spectrum can be a target spectrum, which can be an endpoint-process compensated target spectrum or an uncompensated target spectrum.
- An uncompensated target spectrum refers to a spectrum exhibited by the substrate when the outermost layer has a target thickness.
- a target thickness can be one to three microns.
- the target thickness can be zero, for example, when the film of interest is cleared so that an underlying film is exposed.
- the polishing endpoint can be set at a time prior to achieving the target thickness.
- An endpoint-process compensated target spectrum is a spectrum that when used to trigger a polishing endpoint under a particular endpoint algorithm and polishing control system results in the substrate having substantially the target thickness, e.g., significantly closer to the target thickness than if no compensation for the lag time were made.
- substrates for different integrated chip products will have different patterning of the layers, which also can result in different spectra even if the outermost layer has the same thickness.
- the multiple spectra can include spectra that are different from each other because of differing thicknesses in the underlying layer(s) or differing patterns due to the substrate being intended to provide different products.
- the reference spectra are collected prior to the polishing operation, and the association of each reference spectrum with its associated substrate property is stored. The reference spectra can be determined empirically.
- a property of a "set-up" substrate with the same pattern as the product substrate can be measured pre-polish at a metrology station.
- the substrate property can be the thickness of the outermost layer.
- the set-up substrate is then polished while spectra are collected.
- the set-up substrate can be removed periodically from the polishing system, and its properties measured at a metrology station.
- the substrate can be overpolished, i.e., polished past a desired thickness, so that the spectrum of the light that reflected from the substrate when the target thickness is achieved can be obtained.
- the measured thicknesses and the collected spectra are used to select, from among the collected spectra, one or more spectra determined to be exhibited by the substrate when it had a thickness of interest.
- linear interpolation can be performed using the measured pre polish film thickness and post polish substrate thicknesses to determine the time and corresponding spectrum exhibited when the target thickness was achieved.
- the spectrum or spectra determined to be exhibited when the target thickness was achieved are designated to be the target spectrum or target spectra.
- the resulting collection of reference spectra includes target spectra for the same target thickness but which differ from each other because of differing thicknesses in the underlying layer(s).
- these steps can then be repeated for one or more additional set-up substrates with different patterns from the product substrate to generate additional reference spectra.
- the resulting collection of reference spectra includes target spectra for the same target thickness but which differ from each other because of differing patterns.
- the spectra collected are processed to enhance accuracy and/or precision.
- the spectra can be processed, for example: to normalize them to a common reference, to average them, and/or to filter noise from them.
- reference spectra can be calculated from theory, e.g., using an optical model of the substrate layers.
- FIG. 4 shows a method 200 for using spectra based endpoint determination logic to determine an endpoint of a polishing step.
- a product substrate is polished using the above-described polishing apparatus (step 402). At each revolution of the platen, the following steps are performed.
- At least one spectrum of light reflecting off a substrate surface being polished is measured (step 404).
- multiple spectra can be measured, e.g., spectra measured at different radii on the substrate can be obtained from a single rotation of platen, e.g., at points 301-311 (FIG. 3). If multiple spectra are measured, a subset of one or more of the spectra can be selected for use in the endpoint detection algorithm. For example, spectra measured at sample locations near the center of the substrate (for example, at points 305, 306, and 307 shown in FIG. 3) could be selected. The spectra measured during the current platen revolution are optionally processed to enhance accuracy and/or precision.
- a difference between each of the selected measured spectra and each of the reference spectra is calculated (step 406).
- the reference spectra can be a target spectra.
- the difference is a sum of differences in intensities over a range of wavelengths. That is, b
- the difference can be calculated as a mean square error, that is:
- One way to calculate a difference between each of the current spectra and each of the reference spectra is to select each of the current spectra. For each selected current spectra, the difference is calculated against each of the reference spectra. Given current spectra e,f and g, and reference spectra E, F, and G, for example, a difference would be calculated for each of the following combinations of current and reference spectra: e and E, e and F, e and G,f and is, /and F, /and G, g and E, g and F, and g and G.
- the smallest of the calculated differences is appended to a difference trace (step 408).
- the difference trace is usually updated once per platen revolution.
- the difference trace is generally a plot of one of the calculated differences (in this case the smallest of the differences calculated for the current platen revolution).
- another of the differences for example, a median of the differences or the next to smallest difference, can be appended to the trace.
- the difference trace can be processed, for example, smoothing the difference trace by filtering out a calculated difference that deviates beyond a threshold from preceding one or more calculated differences.
- Whether the difference trace is below a threshold value is determined (step 410).
- endpoint logic is initiated and can be applied to detect an endpoint condition, e.g., the minimum of the difference trace (step 412).
- the endpoint can be called when the different trace begins to rise past a particular threshold value of the minimum, or called if the slope of the difference trace falls below a threshold that is near zero, or other window logic can be applied.
- polishing is halted (step 416).
- the particular reference spectrum that provided the closest match e.g., the smallest difference from the measured spectrum, is then used as the only reference spectrum for the remainder of the endpoint determination process. This ensures that endpoint is based on a target spectra that represents a substrate in which the underlying layers are similar to the substrate being polished.
- the endpoint detection system becomes less sensitive to variations in the underlying layers, and thus reliability of the endpoint system can be improved.
- the endpoint detection system becomes less sensitive to variations in the pattern, and thus reliability of the endpoint system can be improved.
- polishing is allowed to continue and steps 404, 406, 408, are repeated as appropriate.
- FIG. 5 is an exemplary graph of a difference trace as a function of time illustrates the thresholds.
- Trace 502 is the difference trace, which can already be filtered and smoothed.
- Endpoint detection 508 is activated when the smoothed difference trace 502 reaches a threshold value 504 above the minimum 506.
- FIG. 6 shows a method 600 for determining an endpoint of a polishing step.
- reference spectra are generated, e.g., collected empirically, such as by polishing a set up substrate and measuring the spectra, or calculated from theory, e.g., using an optical model of the substrate layers.
- the spectra are stored in a library. However, unlike the process of FIG.
- the reference spectra in the library represent substrates with a variety of different thicknesses in the outer layer.
- the measured spectra are then compared to the spectra in the library and one of the spectra in the library is selected as a match.
- the spectra are indexed so that each spectrum from the collection of spectra representing a substrate with a particular underlying layer thickness has a unique index value (spectra representing substrates with different underlying layer thicknesses can be associated with the same index value).
- the indexing is implemented so that the index values are sequenced in an order in which the spectra were measured or are expected to be measured during polishing.
- An index value can be selected to monotonically increase as polishing progresses, e.g., the index values can be proportional, e.g., linearly proportional, to a number of platen rotations.
- each index number can be a whole number, and the index number can represent the expected platen rotation at which the associated spectrum would appear.
- the library can be implemented in memory of the computing device of the polishing apparatus.
- a substrate from the batch of substrates is polished (step 602), and the following steps are performed for each platen revolution.
- One or more spectra are measured to obtain a current spectra for a current platen revolution (step 604).
- the spectra stored in the library which best fits the current spectra is determined (step 606).
- the index of the library spectrum that is the best fit to the current spectrum is determined from the library (step 608), and is appended to an endpoint index trace (step 610).
- the index can be determined prior to the polishing operation and stored, e.g., as database that relates the spectra to the index, for later access. Endpoint is called when the endpoint trace reaches the index of the target spectrum (step 612).
- the indexes that are matched to each obtained spectrum are plotted according to time or platen rotation.
- a line is fit to the plotted index numbers using robust line fitting. Where the line meets the target index defines the endpoint time or rotation.
- the endpoint detection system becomes less sensitive to variations in the underlying layers, and thus reliability of the endpoint system can be improved.
- a method that can be applied during the endpointing process is to limit the portion of the library that is searched for matching spectra.
- the library typically includes a wider range of spectra than will be obtained while polishing a substrate. The wider range accounts for spectra obtained from a thicker starting outermost layer and spectra obtained after overpolishing.
- the library searching is limited to a predetermined range of library spectra.
- the current rotational index N of a substrate being polished is determined. N can be determined by searching all of the library spectra. For the spectra obtained during a subsequent rotation, the library is searched within a range of freedom of N.
- the index number is found to be N
- the matching index is found to be 8 and the freedom is selected to be 5, for spectra obtained during the second rotation, only spectra corresponding to index numbers 9 ⁇ 5 are examined for a match.
- Embodiments of the invention and all of the functional operations described in this specification can be implemented in digital electronic circuitry, or in computer software, firmware, or hardware, including the structural means disclosed in this specification and structural equivalents thereof, or in combinations of them.
- Embodiments of the invention can be implemented as one or more computer program products, i.e., one or more computer programs tangibly embodied in an information carrier, e.g., in a machine-readable storage device or in a propagated signal, for execution by, or to control the operation of, data processing apparatus, e.g., a programmable processor, a computer, or multiple processors or computers.
- a computer program (also known as a program, software, software application, or code) can be written in any form of programming language, including compiled or interpreted languages, and it can be deployed in any form, including as a stand-alone program or as a module, component, subroutine, or other unit suitable for use in a computing environment.
- a computer program does not necessarily correspond to a file.
- a program can be stored in a portion of a file that holds other programs or data, in a single file dedicated to the program in question, or in multiple coordinated files (e.g., files that store one or more modules, sub-programs, or portions of code).
- a computer program can be deployed to be executed on one computer or on multiple computers at one site or distributed across multiple sites and interconnected by a communication network.
- the processes and logic flows described in this specification can be performed by one or more programmable processors executing one or more computer programs to perform functions by operating on input data and generating output.
- the processes and logic flows can also be performed by, and apparatus can also be implemented as, special purpose logic circuitry, e.g., an FPGA (field programmable gate array) or an ASIC (application-specific integrated circuit).
- polishing apparatus and methods can be applied in a variety of polishing systems.
- Either the polishing pad, or the carrier head, or both can move to provide relative motion between the polishing surface and the substrate.
- the platen may orbit rather than rotate.
- the polishing pad can be a circular (or some other shape) pad secured to the platen.
- Some aspects of the endpoint detection system may be applicable to linear polishing systems, e.g., where the polishing pad is a continuous or a reel-to-reel belt that moves linearly.
- the polishing layer can be a standard (for example, polyurethane with or without fillers) polishing material, a soft material, or a fixed-abrasive material. Terms of relative positioning are used; it should be understood that the polishing surface and substrate can be held in a vertical orientation or some other orientation.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020167010766A KR20160052769A (en) | 2008-05-02 | 2009-04-29 | Endpoint detection in chemical mechanical polishing using multiple spectra |
JP2011507606A JP5542802B2 (en) | 2008-05-02 | 2009-04-29 | Endpoint detection in chemical mechanical polishing using multiple spectra |
CN2009801165583A CN102017094B (en) | 2008-05-02 | 2009-04-29 | Endpoint detection in chemical mechanical polishing using multiple spectra |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4996508P | 2008-05-02 | 2008-05-02 | |
US61/049,965 | 2008-05-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009134865A2 true WO2009134865A2 (en) | 2009-11-05 |
WO2009134865A3 WO2009134865A3 (en) | 2010-02-18 |
Family
ID=41255749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/042085 WO2009134865A2 (en) | 2008-05-02 | 2009-04-29 | Endpoint detection in chemical mechanical polishing using multiple spectra |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090275265A1 (en) |
JP (1) | JP5542802B2 (en) |
KR (2) | KR20160052769A (en) |
CN (2) | CN102017094B (en) |
WO (1) | WO2009134865A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014504041A (en) * | 2011-01-28 | 2014-02-13 | アプライド マテリアルズ インコーポレイテッド | Spectrum collection from multiple optical heads |
JP2014512704A (en) * | 2011-04-28 | 2014-05-22 | アプライド マテリアルズ インコーポレイテッド | Variations in coefficients and functions for polishing control |
US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
US8392012B2 (en) * | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
US9579767B2 (en) | 2010-04-28 | 2017-02-28 | Applied Materials, Inc. | Automatic generation of reference spectra for optical monitoring of substrates |
TWI496661B (en) * | 2010-04-28 | 2015-08-21 | Applied Materials Inc | Automatic generation of reference spectra for optical monitoring |
JP6039545B2 (en) * | 2010-05-05 | 2016-12-07 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Dynamic or adaptive tracking of spectral features for endpoint detection |
US8666665B2 (en) | 2010-06-07 | 2014-03-04 | Applied Materials, Inc. | Automatic initiation of reference spectra library generation for optical monitoring |
US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
TW201223702A (en) * | 2010-08-06 | 2012-06-16 | Applied Materials Inc | Techniques for matching measured spectra to reference spectra for in-situ optical monitoring |
US8547538B2 (en) * | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
US8755928B2 (en) | 2011-04-27 | 2014-06-17 | Applied Materials, Inc. | Automatic selection of reference spectra library |
US20140024293A1 (en) * | 2012-07-19 | 2014-01-23 | Jimin Zhang | Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing |
US8808059B1 (en) | 2013-02-27 | 2014-08-19 | Applied Materials, Inc. | Spectraphic monitoring based on pre-screening of theoretical library |
CN103887206B (en) * | 2014-04-02 | 2017-05-31 | 中国电子科技集团公司第四十五研究所 | Method for detecting chemical and mechanical flattening endpoint and device |
US20160033958A1 (en) * | 2014-08-01 | 2016-02-04 | Globalfoundries Inc. | Endpoint determination using individually measured target spectra |
JP6399873B2 (en) * | 2014-09-17 | 2018-10-03 | 株式会社荏原製作所 | Film thickness signal processing apparatus, polishing apparatus, film thickness signal processing method, and polishing method |
CN105057712B (en) * | 2015-08-24 | 2019-04-23 | 佛山新成洪鼎机械技术有限公司 | Axis is automatically positioned deep hole blind hole machining lathe |
TWI755448B (en) * | 2016-11-30 | 2022-02-21 | 美商應用材料股份有限公司 | Spectrographic monitoring using a neural network |
US11507824B2 (en) | 2018-06-28 | 2022-11-22 | Applied Materials, Inc. | Training spectrum generation for machine learning system for spectrographic monitoring |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
US6670200B2 (en) * | 1998-05-21 | 2003-12-30 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US20080099443A1 (en) * | 2006-10-31 | 2008-05-01 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
Family Cites Families (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5747380A (en) * | 1996-02-26 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Robust end-point detection for contact and via etching |
US5770948A (en) * | 1996-03-19 | 1998-06-23 | International Business Machines Corporation | Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool |
US6489624B1 (en) * | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
JP4460659B2 (en) * | 1997-10-22 | 2010-05-12 | 株式会社ルネサステクノロジ | Thin film thickness measuring method and apparatus, thin film device manufacturing method and apparatus using the same |
TW374050B (en) * | 1997-10-31 | 1999-11-11 | Applied Materials Inc | Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing |
JPH11325840A (en) * | 1998-05-19 | 1999-11-26 | Dainippon Screen Mfg Co Ltd | Method and apparatus for judging whether or not remaining metal film exists |
US6106662A (en) | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
TW398036B (en) * | 1998-08-18 | 2000-07-11 | Promos Technologies Inc | Method of monitoring of chemical mechanical polishing end point and uniformity |
IL125964A (en) * | 1998-08-27 | 2003-10-31 | Tevet Process Control Technolo | Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate |
JP4484370B2 (en) * | 1998-11-02 | 2010-06-16 | アプライド マテリアルズ インコーポレイテッド | Method for determining an end point for chemical mechanical polishing of a metal layer on a substrate and apparatus for polishing a metal layer of a substrate |
US6159073A (en) * | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
US6908374B2 (en) * | 1998-12-01 | 2005-06-21 | Nutool, Inc. | Chemical mechanical polishing endpoint detection |
US6172756B1 (en) * | 1998-12-11 | 2001-01-09 | Filmetrics, Inc. | Rapid and accurate end point detection in a noisy environment |
US6204922B1 (en) * | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
US6184985B1 (en) * | 1998-12-11 | 2001-02-06 | Filmetrics, Inc. | Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources |
US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
US6334807B1 (en) * | 1999-04-30 | 2002-01-01 | International Business Machines Corporation | Chemical mechanical polishing in-situ end point system |
JP3327289B2 (en) * | 2000-03-29 | 2002-09-24 | 株式会社ニコン | Process end point measuring device, measuring method, polishing device, semiconductor device manufacturing method, and recording medium recording signal processing program |
WO2000071971A1 (en) * | 1999-05-24 | 2000-11-30 | Luxtron Corporation | Optical techniques for measuring layer thicknesses |
US6358327B1 (en) * | 1999-06-29 | 2002-03-19 | Applied Materials, Inc. | Method for endpoint detection using throttle valve position |
US6340602B1 (en) * | 1999-12-10 | 2002-01-22 | Sensys Instruments | Method of measuring meso-scale structures on wafers |
JP3259225B2 (en) * | 1999-12-27 | 2002-02-25 | 株式会社ニコン | Polishing status monitoring method and apparatus, polishing apparatus, process wafer, semiconductor device manufacturing method, and semiconductor device |
JP3506114B2 (en) * | 2000-01-25 | 2004-03-15 | 株式会社ニコン | MONITOR DEVICE, POLISHING APPARATUS HAVING THE MONITOR DEVICE, AND POLISHING METHOD |
EP1322940A4 (en) * | 2000-07-31 | 2006-03-15 | Asml Us Inc | In-situ method and apparatus for end point detection in chemical mechanical polishing |
AU2001279247A1 (en) * | 2000-08-10 | 2002-02-25 | Sensys Instruments Corporation | Database interpolation method for optical measurement of diffractive microstructures |
US6511363B2 (en) * | 2000-12-27 | 2003-01-28 | Tokyo Seimitsu Co., Ltd. | Polishing end point detecting device for wafer polishing apparatus |
US6819426B2 (en) * | 2001-02-12 | 2004-11-16 | Therma-Wave, Inc. | Overlay alignment metrology using diffraction gratings |
JP3946470B2 (en) * | 2001-03-12 | 2007-07-18 | 株式会社デンソー | Method for measuring thickness of semiconductor layer and method for manufacturing semiconductor substrate |
US6812478B2 (en) * | 2001-03-19 | 2004-11-02 | Lam Research Corporation | In-situ detection of thin-metal interface using optical interference via a dynamically updated reference |
US6676482B2 (en) * | 2001-04-20 | 2004-01-13 | Speedfam-Ipec Corporation | Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6762838B2 (en) * | 2001-07-02 | 2004-07-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for production line screening |
JP3932836B2 (en) * | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | Thin film thickness measuring method and apparatus, and device manufacturing method using the same |
US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
US6898596B2 (en) * | 2001-10-23 | 2005-05-24 | Therma-Wave, Inc. | Evolution of library data sets |
US6678055B2 (en) * | 2001-11-26 | 2004-01-13 | Tevet Process Control Technologies Ltd. | Method and apparatus for measuring stress in semiconductor wafers |
US6939198B1 (en) * | 2001-12-28 | 2005-09-06 | Applied Materials, Inc. | Polishing system with in-line and in-situ metrology |
US6942546B2 (en) * | 2002-01-17 | 2005-09-13 | Asm Nutool, Inc. | Endpoint detection for non-transparent polishing member |
US6813034B2 (en) * | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
US6806948B2 (en) * | 2002-03-29 | 2004-10-19 | Lam Research Corporation | System and method of broad band optical end point detection for film change indication |
US20040007325A1 (en) * | 2002-06-11 | 2004-01-15 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
US6947135B2 (en) * | 2002-07-01 | 2005-09-20 | Therma-Wave, Inc. | Reduced multicubic database interpolation method for optical measurement of diffractive microstructures |
US20040018647A1 (en) * | 2002-07-02 | 2004-01-29 | Applied Materials, Inc. | Method for controlling the extent of notch or undercut in an etched profile using optical reflectometry |
US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
JP4542324B2 (en) * | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | Polishing state monitoring device and polishing device |
US6885467B2 (en) * | 2002-10-28 | 2005-04-26 | Tevet Process Control Technologies Ltd. | Method and apparatus for thickness decomposition of complicated layer structures |
US7265382B2 (en) * | 2002-11-12 | 2007-09-04 | Applied Materials, Inc. | Method and apparatus employing integrated metrology for improved dielectric etch efficiency |
CN100349267C (en) * | 2002-11-27 | 2007-11-14 | 东洋橡胶工业株式会社 | Polishing pad and method for manufacturing semiconductor device |
IL153894A (en) * | 2003-01-12 | 2010-05-31 | Nova Measuring Instr Ltd | Method and system for thickness measurements of thin conductive layers |
US7049156B2 (en) * | 2003-03-19 | 2006-05-23 | Verity Instruments, Inc. | System and method for in-situ monitor and control of film thickness and trench depth |
JP2004363201A (en) * | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | Method and equipment for polishing wafer |
US7008296B2 (en) * | 2003-06-18 | 2006-03-07 | Applied Materials, Inc. | Data processing for monitoring chemical mechanical polishing |
US20050026542A1 (en) * | 2003-07-31 | 2005-02-03 | Tezer Battal | Detection system for chemical-mechanical planarization tool |
US7097537B1 (en) * | 2003-08-18 | 2006-08-29 | Applied Materials, Inc. | Determination of position of sensor measurements during polishing |
JP4464642B2 (en) * | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | Polishing state monitoring apparatus, polishing state monitoring method, polishing apparatus, and polishing method |
DE602005013356D1 (en) * | 2004-01-26 | 2009-04-30 | Tbw Ind Inc | CHEMICAL-MECHANICAL PLANARIZATION PROCESS CONTROL WITH AN IN-SITU PROCESSING PROCESS |
US7255771B2 (en) * | 2004-03-26 | 2007-08-14 | Applied Materials, Inc. | Multiple zone carrier head with flexible membrane |
JP5017765B2 (en) * | 2004-03-30 | 2012-09-05 | 日本電気株式会社 | OPTICAL MODULATOR, MANUFACTURING METHOD THEREOF, MODULATION OPTICAL SYSTEM, OPTICAL INTERCONNECT DEVICE USING SAME, AND OPTICAL COMMUNICATION DEVICE |
US7120553B2 (en) * | 2004-07-22 | 2006-10-10 | Applied Materials, Inc. | Iso-reflectance wavelengths |
US7393459B2 (en) * | 2004-08-06 | 2008-07-01 | Applied Materials, Inc. | Method for automatic determination of substrates states in plasma processing chambers |
JP5534672B2 (en) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for spectrum-based monitoring of chemical mechanical polishing |
US7406394B2 (en) * | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
US7409260B2 (en) * | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
US7306507B2 (en) * | 2005-08-22 | 2007-12-11 | Applied Materials, Inc. | Polishing pad assembly with glass or crystalline window |
US20070077671A1 (en) * | 2005-10-03 | 2007-04-05 | Applied Materials | In-situ substrate imaging |
US7277819B2 (en) * | 2005-10-31 | 2007-10-02 | Eastman Kodak Company | Measuring layer thickness or composition changes |
KR101381341B1 (en) * | 2006-10-06 | 2014-04-04 | 가부시끼가이샤 도시바 | Processing end point detection method, polishing method, and polishing apparatus |
US7612873B2 (en) * | 2006-11-13 | 2009-11-03 | Dainippon Screen Mfg. Co., Ltd. | Surface form measuring apparatus and stress measuring apparatus and surface form measuring method and stress measuring method |
US7444198B2 (en) * | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
TWI445098B (en) * | 2007-02-23 | 2014-07-11 | Applied Materials Inc | Using spectra to determine polishing endpoints |
US7663766B2 (en) * | 2007-09-05 | 2010-02-16 | Advanced Micro Devices, Inc. | Incorporating film optical property measurements into scatterometry metrology |
US20100114532A1 (en) * | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Weighted spectrographic monitoring of a substrate during processing |
CN101509741A (en) | 2009-03-19 | 2009-08-19 | 上海交通大学 | Heat exchanger fin and fin tube type heat exchanger |
-
2009
- 2009-04-28 US US12/431,532 patent/US20090275265A1/en not_active Abandoned
- 2009-04-29 CN CN2009801165583A patent/CN102017094B/en active Active
- 2009-04-29 JP JP2011507606A patent/JP5542802B2/en active Active
- 2009-04-29 WO PCT/US2009/042085 patent/WO2009134865A2/en active Application Filing
- 2009-04-29 CN CN201310496357.9A patent/CN103537975A/en active Pending
- 2009-04-29 KR KR1020167010766A patent/KR20160052769A/en not_active Application Discontinuation
- 2009-04-29 KR KR1020107027159A patent/KR101619374B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6670200B2 (en) * | 1998-05-21 | 2003-12-30 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
US20080099443A1 (en) * | 2006-10-31 | 2008-05-01 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
JP2014504041A (en) * | 2011-01-28 | 2014-02-13 | アプライド マテリアルズ インコーポレイテッド | Spectrum collection from multiple optical heads |
JP2014512704A (en) * | 2011-04-28 | 2014-05-22 | アプライド マテリアルズ インコーポレイテッド | Variations in coefficients and functions for polishing control |
Also Published As
Publication number | Publication date |
---|---|
CN102017094B (en) | 2013-11-20 |
CN103537975A (en) | 2014-01-29 |
KR101619374B1 (en) | 2016-05-10 |
US20090275265A1 (en) | 2009-11-05 |
JP5542802B2 (en) | 2014-07-09 |
KR20110021842A (en) | 2011-03-04 |
JP2011520264A (en) | 2011-07-14 |
WO2009134865A3 (en) | 2010-02-18 |
CN102017094A (en) | 2011-04-13 |
KR20160052769A (en) | 2016-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20090275265A1 (en) | Endpoint detection in chemical mechanical polishing using multiple spectra | |
US8874250B2 (en) | Spectrographic monitoring of a substrate during processing using index values | |
US8369978B2 (en) | Adjusting polishing rates by using spectrographic monitoring of a substrate during processing | |
US10589397B2 (en) | Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing | |
US10766119B2 (en) | Spectra based endpointing for chemical mechanical polishing | |
US9142466B2 (en) | Using spectra to determine polishing endpoints | |
US10651098B2 (en) | Polishing with measurement prior to deposition of outer layer | |
US9117751B2 (en) | Endpointing detection for chemical mechanical polishing based on spectrometry | |
US8392012B2 (en) | Multiple libraries for spectrographic monitoring of zones of a substrate during processing | |
US20100114532A1 (en) | Weighted spectrographic monitoring of a substrate during processing | |
US20100103422A1 (en) | Goodness of fit in spectrographic monitoring of a substrate during processing | |
KR101616024B1 (en) | Goodness of fit in spectrographic monitoring of a substrate during processing | |
US20110282477A1 (en) | Endpoint control of multiple substrates with multiple zones on the same platen in chemical mechanical polishing | |
KR102534756B1 (en) | Polishing with measurement prior to deposition | |
US9811077B2 (en) | Polishing with pre deposition spectrum |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980116558.3 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09739667 Country of ref document: EP Kind code of ref document: A2 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011507606 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20107027159 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09739667 Country of ref document: EP Kind code of ref document: A2 |