WO2009116744A3 - 발광다이오드 리드프레임과 그 리드프레임을 이용한 발광다이오드 패키지 및 그 제조방법 - Google Patents

발광다이오드 리드프레임과 그 리드프레임을 이용한 발광다이오드 패키지 및 그 제조방법 Download PDF

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Publication number
WO2009116744A3
WO2009116744A3 PCT/KR2009/001191 KR2009001191W WO2009116744A3 WO 2009116744 A3 WO2009116744 A3 WO 2009116744A3 KR 2009001191 W KR2009001191 W KR 2009001191W WO 2009116744 A3 WO2009116744 A3 WO 2009116744A3
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WIPO (PCT)
Prior art keywords
led
medium
led package
led chip
manufacturing
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PCT/KR2009/001191
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English (en)
French (fr)
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WO2009116744A2 (ko
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이경재
오승현
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(주)루멘스
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Publication of WO2009116744A2 publication Critical patent/WO2009116744A2/ko
Publication of WO2009116744A3 publication Critical patent/WO2009116744A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

본 발명은 제조원가를 절감할 수 있으면서 생산성 저하를 방지하고 대량 양산시 수율을 극도로 개선시킬 수 있는 발광 다이오드 패키지를 제공하기 위한 것이다. 이를 위하여 본 발명은 플레이트와, 상기 플레이트에 접합되는 발광 칩과, 상기 발광 칩을 덮도록 상기 플레이트 상에 형성되고 상기 발광 칩의 발광 파장에 의해 독립된 파장의 빛을 발산하는 제1매질과, 상기 제1매질 상에 형성되고 상기 발광 칩과 제1매질로부터 나오는 빛이 투과되는 제2매질과, 상기 플레이트에 형성되어 상기 제1매질의 범위를 설정하는 규제부를 포함하는 발광다이오드 패키지를 제공한다.
PCT/KR2009/001191 2008-03-21 2009-03-10 발광다이오드 리드프레임과 그 리드프레임을 이용한 발광다이오드 패키지 및 그 제조방법 WO2009116744A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0026516 2008-03-21
KR1020080026516A KR101007062B1 (ko) 2008-03-21 2008-03-21 발광다이오드 리드프레임과 그 리드프레임을 이용한발광다이오드 패키지 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2009116744A2 WO2009116744A2 (ko) 2009-09-24
WO2009116744A3 true WO2009116744A3 (ko) 2009-11-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001191 WO2009116744A2 (ko) 2008-03-21 2009-03-10 발광다이오드 리드프레임과 그 리드프레임을 이용한 발광다이오드 패키지 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR101007062B1 (ko)
WO (1) WO2009116744A2 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101852876B1 (ko) * 2011-08-22 2018-06-20 엘지이노텍 주식회사 발광소자
KR101880454B1 (ko) * 2011-08-24 2018-07-23 엘지이노텍 주식회사 발광소자 패키지
KR101896659B1 (ko) * 2011-09-02 2018-09-07 엘지이노텍 주식회사 발광소자 패키지, 백라이트 유닛 및 영상표시장치
KR101896661B1 (ko) * 2011-10-28 2018-09-07 엘지이노텍 주식회사 발광소자 패키지, 백라이트 유닛 및 영상표시장치
KR101896662B1 (ko) * 2011-11-07 2018-09-07 엘지이노텍 주식회사 발광소자 패키지, 백라이트 유닛 및 영상표시장치
KR101888444B1 (ko) * 2012-02-28 2018-08-16 엘지디스플레이 주식회사 발광 다이오드 패키지 및 그 제조 방법
DE102012215705B4 (de) * 2012-09-05 2021-09-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse für ein optisches bauelement, baugruppe, verfahren zum herstellen eines gehäuses und verfahren zum herstellen einer baugruppe
KR102075730B1 (ko) * 2013-08-07 2020-02-10 엘지이노텍 주식회사 발광 소자 및 조명 시스템
DE102013221429A1 (de) * 2013-10-22 2015-05-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
JP2016100385A (ja) * 2014-11-19 2016-05-30 パイオニア株式会社 光半導体デバイスおよび光半導体デバイスの製造方法
JP6213582B2 (ja) * 2016-01-22 2017-10-18 日亜化学工業株式会社 発光装置
JP2019087763A (ja) * 2019-03-01 2019-06-06 パイオニア株式会社 光半導体デバイスおよび光半導体デバイスの製造方法

Citations (4)

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KR20050031143A (ko) * 2003-09-29 2005-04-06 바이오닉스(주) 고출력 엘이디패키지 제작방법 및 이를 이용한 고출력엘이디패키지
JP2005136101A (ja) * 2003-10-29 2005-05-26 Stanley Electric Co Ltd 半導体発光装置
JP2007116146A (ja) * 2005-10-20 2007-05-10 Samsung Electro Mech Co Ltd 発光ダイオードパッケージ
KR100756617B1 (ko) * 2006-09-29 2007-09-07 서울반도체 주식회사 발광소자

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3986327B2 (ja) * 2002-03-01 2007-10-03 シチズン電子株式会社 発光装置の製造方法
JP3969660B2 (ja) * 2003-08-05 2007-09-05 スタンレー電気株式会社 白色ｌｅｄランプ
JP2006114854A (ja) * 2004-10-18 2006-04-27 Sharp Corp 半導体発光装置、液晶表示装置用のバックライト装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050031143A (ko) * 2003-09-29 2005-04-06 바이오닉스(주) 고출력 엘이디패키지 제작방법 및 이를 이용한 고출력엘이디패키지
JP2005136101A (ja) * 2003-10-29 2005-05-26 Stanley Electric Co Ltd 半導体発光装置
JP2007116146A (ja) * 2005-10-20 2007-05-10 Samsung Electro Mech Co Ltd 発光ダイオードパッケージ
KR100756617B1 (ko) * 2006-09-29 2007-09-07 서울반도체 주식회사 발광소자

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WO2009116744A2 (ko) 2009-09-24
KR20090100968A (ko) 2009-09-24
KR101007062B1 (ko) 2011-01-12

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