WO2009109065A1 - Waveguide coupled surface plasmon resonance sensor, sensor detecting device and detecting method thereof - Google Patents

Waveguide coupled surface plasmon resonance sensor, sensor detecting device and detecting method thereof Download PDF

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WO2009109065A1
WO2009109065A1 PCT/CN2008/000437 CN2008000437W WO2009109065A1 WO 2009109065 A1 WO2009109065 A1 WO 2009109065A1 CN 2008000437 W CN2008000437 W CN 2008000437W WO 2009109065 A1 WO2009109065 A1 WO 2009109065A1
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layer
sensor
light source
refractive index
dielectric waveguide
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PCT/CN2008/000437
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French (fr)
Chinese (zh)
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郑铮
赵欣
朱劲松
范江峰
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国家纳米科学中心
北京航空航天大学
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Priority to PCT/CN2008/000437 priority Critical patent/WO2009109065A1/en
Publication of WO2009109065A1 publication Critical patent/WO2009109065A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • G01N21/552Attenuated total reflection
    • G01N21/553Attenuated total reflection and using surface plasmons

Definitions

  • the present invention relates to the field of sensors and sensing technologies, and in particular to a surface plasmon resonance sensor having a fast response, a sensing detecting device and a detecting method thereof. Background technique
  • SPR Surface Plasmon Resonance
  • ATR At Tenua ted Tota Ref ect ion
  • the wave vector of the surface plasma matches the wave vector of the SPR evanescent wave, and the reflected light energy becomes smaller than that of the total reflection, and the incident light energy Coupled into the surface plasma waves, resulting in a significant reduction in reflected light energy.
  • This particular angle of incidence is called the surface plasmon resonance angle.
  • surface plasmon resonance angle By angular scanning, surface plasmon resonance peaks (ie, minimum reflection intensity values) can appear on the reflection spectrum.
  • the refractive index of the medium in contact with the metal surface is different, the surface plasmon resonance angle is different. By measuring the position of the surface plasmon resonance angle and the change in its reflected light intensity, some characteristic parameters of the medium near the metal surface and the amount of change thereof can be obtained.
  • Waveguide Coup ed Surface P lasmon Resonance is an SPR resonance mode. And Bioelectronics, 2004, vo l 20, p633-642 ). Compared with the traditional SPR detection method, the WCSPR detection method can achieve higher sensitivity, larger signal-to-noise ratio and wider dynamic measurement range.
  • the sensor structure for realizing WCSPR detection is mainly composed of a first metal layer, a dielectric waveguide layer, a second metal layer and a detected layer. Measurement.
  • the most commonly used SPR scan mode has a kind of ': ⁇
  • Angle scanning method (Angu lar Interroga t ion ): This is the most common scanning method for traditional SPR detection.
  • the method can use a fixed-wavelength light source to rotate the SPR detection structure or the incident light source by a mechanical device to change the incident angle of the incident light at the interface of the SPR detection structure to find the SPR resonance angle.
  • the running speed of the rotating table is limited, so the scanning speed of the system is slow, and it is difficult to achieve fast real-time measurement with high time resolution, and the mechanical scanning device is also disadvantageous for system miniaturization and high-throughput detection.
  • This method can also be used Focus the beam, not the near-plane beam that is typically used, as the incident light.
  • the focused beam is composed of plane waves of different wave vectors, so that it is possible to cover a certain range of incident angles without changing the central incident angle.
  • the method can be performed by using a spatial photodetector array device
  • the detection speed is relatively fast, but the speed of the detected array electronics can only reach a level of tens of kHz.
  • Wavelength Interrogation This method is to change the wavelength of incident light when the angle of incidence is fixed, or to input a wide-spectrum light source to measure the response of light incident at different wavelengths. The corresponding light wavelength of the SPR resonance.
  • the cost of achieving high resolution is very expensive, the volume of the device is difficult to reduce, and the scanning speed is limited.
  • Intensity trajectory method This method detects the change of the characteristics of the substance to be tested by measuring the change of the reflected light intensity when the incident angle is fixed and the incident wavelength and power are fixed. The intensity scanning method is faster, but its resolution is very low.
  • the object of the present invention is to overcome the drawbacks of the slow detection speed of the conventional WCSPR sensing technology, thereby providing a WCSPR sensor device that can be quickly scanned and detected.
  • Another object of the present invention is to provide a detecting device using the above WCSPR sensor.
  • a waveguide coupling surface plasmon resonance sensor comprising a dielectric waveguide layer, wherein the material of the dielectric waveguide layer is a nonlinear optical material.
  • the nonlinear optical material is preferably a third-order nonlinear optical material, such as carbon nanotubes, diarylferrocene, phthalocyanine, porphyrin, polydiacetylene, polyaniline, polythiophene, polypyrrole, polyphenylacetylene, poly A third-order nonlinear optical material composed of one or more of acrylonitrile, a 4, 4'-bipyridine metal complex or an azobenzene polymer.
  • a third-order nonlinear optical material such as carbon nanotubes, diarylferrocene, phthalocyanine, porphyrin, polydiacetylene, polyaniline, polythiophene, polypyrrole, polyphenylacetylene, poly
  • a third-order nonlinear optical material composed of one or more of acrylonitrile, a 4, 4'-bipyridine metal complex or an azobenzene polymer.
  • the thickness of the dielectric waveguide layer is preferably less than 100 ⁇ m, and in particular, the thickness of the dielectric waveguide layer is more preferably in the range of 1 ⁇ m - 10 ⁇ m.
  • at least a cladding layer is disposed on both sides of the dielectric waveguide layer, and a refractive index of the cladding layer should be smaller than a refractive index of the dielectric waveguide layer.
  • the material of the cladding layer may preferably be an optical glass, a polymer, an optical crystal or a metal or the like.
  • the present invention provides a waveguide coupled surface plasmon resonance sensing measuring apparatus comprising the above sensor and a control light source for varying the refractive index of the dielectric waveguide layer.
  • the control light source is preferably a laser light source and/or a pulse light source.
  • the pulsed light source it is particularly preferable that the sum of the rising edge and the falling edge width of the waveform of the output pulse light is larger than fifty percent of the pulse width.
  • the waveform of the pulse light output pulse light is preferably a triangular type, a Gaussian type or a hyperbolic tangent type.
  • the pulse light source preferably outputs a pulse light source whose amplitude of the pulse light is adjustable.
  • the above-mentioned sensor measuring device further includes a light detecting device for detecting the output light of the detecting light source reflected by the sensor, wherein the light detecting device can complete the output detecting light during one pulse period of the pulse light source At least one measurement, such as a photodetector, a light-like oscilloscope, or a CCD.
  • a light detecting device for detecting the output light of the detecting light source reflected by the sensor, wherein the light detecting device can complete the output detecting light during one pulse period of the pulse light source At least one measurement, such as a photodetector, a light-like oscilloscope, or a CCD.
  • the present invention provides a sensing method for the above-described waveguide coupled surface plasmon resonance sensing measuring device, comprising the following steps:
  • step (c) further comprises the step of adjusting the intensity of the control light output by the control light source.
  • the step (d) comprises: firstly, according to the waveform information recorded by the photodetector, combined with the optical nonlinear characteristics of the material used in the sensor dielectric waveguide layer, the dielectric waveguide layer corresponding to the waveguide coupling formant is obtained. Refractive index; Then, the refractive index and/or thickness variation of the detected layer is obtained by the waveguide coupling formant and its corresponding dielectric waveguide layer refractive index.
  • the invention has the following advantages: Ultra-fast all-optical tuning for ultra-high-speed WCSPR scanning with scan speeds that are orders of magnitude higher than existing SPR scanning methods.
  • the invention is based on the third-order nonlinear effect caused by the pulse light source. For short pulses with a certain repetition frequency, each pulse can be subjected to SPR detection, and the scanning time depends on the width of the light pulse.
  • the pulse width generated by the existing pulse light source can reach the order of several tens of femtoseconds or picoseconds, so that the SPR signal can be scanned in a very short time.
  • the present invention can be used to monitor physical, chemical or biological processes in real time, and obtain process information with extremely high time resolution.
  • the time to perform a scan is the time-domain width of a pulse. Since the time-domain width of the pulse can be very narrow and can reach the order of femtoseconds, the scanning speed can be very fast, so that continuous scanning of the ultra-fast reaction process can be realized.
  • the entire reaction process can be monitored on a fine time axis to obtain process information such as accurate kinetic curves.
  • the invention can be used to monitor rapid biochemical reaction processes. SPR sensor components are mostly used for biochemical detection, and dynamic monitoring of biochemical reaction processes to obtain biodynamic information is one of the most significant applications. However, due to the limitation of scanning speed, the existing SPR sensing system is difficult to dynamically monitor the reaction process for some biochemical reactions with short reaction times (on the order of seconds or less). The invention can greatly improve the time resolution on the time axis of the kinetic curve and dynamically monitor the reaction mechanism of the rapid biochemical reaction.
  • FIG. 1 is the basic structure of an ultrafast all-optical tuned WCSPR sensor chip. 1 is the first metal layer, 2 is the dielectric waveguide layer, 3 is the second metal layer, 4 is the detected layer, 5 is the fluid layer, and 6 is the base layer.
  • Figure 2 shows the sensor structure for plasmon resonance of an ultrafast all-optical waveguide coupled surface.
  • Figure 3 is a schematic diagram of an ultrafast all-optical tuned WCSPR sensing system.
  • Figure 4 is a graph showing the change in the intensity of reflected light over time in the case of changing the refractive index of the measured layer.
  • Figure 5 is a graph showing the relationship between the two lowest point spacings of the time and intensity curves of the detected light reflection signal and the refractive index of the measured layer.
  • Figure 6 is a graph showing the change in reflectance of light with the refractive index of the dielectric waveguide layer.
  • the present invention adopts a waveguide-coupled surface plasmon resonance structure as a basic structure of a sensor, and modulates the WCSPR response of the detection light by tuning optical characteristics of the dielectric waveguide layer (such as refractive index) to obtain a sample to be detected. Information to achieve rapid detection of the sample being tested.
  • the WCSPR structure shown in Figure 1 contains a multi-layer structure.
  • the surface plasmon resonance wave vector generated at the interface between the second metal layer 103 and the layer to be detected 104 is affected by the waveguide mode characteristics of the dielectric waveguide layer 102. Since surface plasmon resonance can only be excited by the TM mode of incident light, the TM mode reflection at the interface between dielectric waveguide layer 102 and second metal layer 103 can be expressed as:
  • ⁇ k ⁇ k represents the z-direction component of the wave vector in the i-th layer, represents the z-direction component of the wave vector in the k-th layer, represents the dielectric constant of the material of the k-th layer, and represents the dielectric constant of the material of the i-th layer, theoretically
  • the reflectivity equation can be expressed as:
  • phase of the reflected light can be expressed as:
  • the reflectivity; r x , Struktur indicates the incident light incident from the first waveguide layer, the reflection from the second to n-th waveguide layers, and the reflection coefficient back to the first waveguide layer; indicating the n-1th waveguide
  • the invention adopts a material having a third-order nonlinear optical effect as an optical medium layer material in the WCSPR sensing structure, and the optical physical property parameters such as the refractive index of the material may change with the electromagnetic field intensity of the incident light.
  • materials having a third-order nonlinear optical effect are exemplified.
  • the third-order nonlinear optical effect originates from the third-order polarization rate, and the electromagnetic field of the light can cause the refractive index of the third-order nonlinear optical material to change, that is, the refractive index effect related to the light intensity.
  • the refractive index of a material having a third-order nonlinear optical effect can be expressed as:
  • Re represents the real part
  • is the part of the fourth-order tensor of the third-order polarization rate 3) that contributes to the change in refractive index.
  • Equation (5) shows that there is a linear correspondence between the refractive index change of the third-order nonlinear material and the magnitude of the light intensity and the third-order nonlinear coefficient of the material. Therefore, by changing the intensity of the tuned light, the refractive index of the dielectric waveguide layer can be modulated, thereby changing the WCSPR resonance condition of the detected light in the WCSPR sensor, and realizing WCSPR modulation.
  • a third-order nonlinear optical waveguide material with a third-order nonlinear optical coefficient of 1.87 X l can be obtained using a doped polymer (Proc. SPIE 2693, 523-531, 1996).
  • the already well-developed planar optical waveguide processing method can be fabricated into the waveguide structure required by the invention.
  • the short-light pulse generation technology mainly includes two kinds of Q-switching technology and mode-locking technology.
  • a pulsed laser with pulse width ⁇ 1 ps, peak power > 10 kW, repetition rate >10 GHz and time jitter ⁇ 10 f s can be achieved using mode-locking technology.
  • a precise phase encoding in the frequency domain can be achieved by means of gratings, spatial phase modulators, fiber gratings, etc., to achieve pulse shape control in the time domain (IEEE J. Quantum E. tron., 1992, vol. 28, pp. 908 920) .
  • the sensor structure shown in FIG. 1 is composed of a multilayer film, which is a transparent base layer 106, a first metal layer 101, a dielectric waveguide layer 102, a second metal layer 103, and a detected layer 104, from top to bottom.
  • the material of the dielectric waveguide layer 102 uses a nonlinear optical material, particularly a third-order nonlinear optical material such as carbon nanotubes, diarylferrocene, phthalocyanine, guanidine, polydiacetylene, polyaniline, polythiophene, Polypyrrole, polyphenylacetylene, polyacrylonitrile, 4, 4'-bipyridine metal complex or azobenzene polymer, etc.
  • the thickness of the dielectric waveguide layer 102 should be greater than the wavelength of the detection light, which is less than ⁇ ⁇ ⁇ ⁇ , and particularly preferably, the range is ⁇ ⁇ ⁇ - 10 ⁇ ⁇ .
  • the ligand layer 104 contains a ligand, which can be affected by the solution to be tested. The body reacts to change the properties of the layer to be detected 104 such that its thickness or refractive index changes.
  • both sensors comprise a base layer 206, a first metal layer 201, a dielectric waveguide layer 202, a second metal layer 203 and a detected layer 204, in addition, Figures 2a and 2b A cladding layer 207 is also provided, and the cladding layer 207 may be disposed only on both sides of the dielectric waveguide layer 202 (as shown in FIG.
  • the cladding layer 207 functions to control the pulsed laser light that is coupled into the dielectric waveguide layer 202 by the end face to propagate in the dielectric waveguide layer 202.
  • the material of the cladding layer 207 can be selected, for example, optically. Glass, polymer, optical crystal or metal, etc., but whose refractive index should be less than the refractive index of the dielectric waveguide layer material.
  • Fig. 3 is a schematic structural view of a waveguide coupled surface plasmon resonance sensing measuring device.
  • the chip structure of the sensor is the same as that of FIG. 2b. 761.
  • the refractive index of the 980 nm incident light is 1. 7761.
  • the first metal layer 307 and the second metal layer 309 are made of pure gold and have a thickness of 20 nm.
  • PthPC third-order nonlinear material 2, 9, 16, 23-tetrakis(phenylthio)- 29 ⁇ , 31 ⁇ -phthalocyanine
  • the cladding (not shown in Figure 3) material is also pure gold and is prepared by mask evaporation.
  • the detected layer 313 was covalently attached to the IgG molecule with 16-mercaptohexadecylcarboxylic acid as a biochemical modification to a thickness of about 3 nm.
  • the WCSPR sensing detecting device in this embodiment further includes a control light source 301, a detecting light source 302 and a photodetector 312.
  • the scanning and variation of the control light intensity can modulate the refractive index of the dielectric waveguide layer, thereby realizing the medium.
  • the scanning and tuning of the refractive index of the waveguide layer is within a certain range. Since the frequency of the pulsed light source can reach above 10 GHz in the prior art, high-speed scanning is truly realized.
  • the sum of the rising edge and the falling edge width of the pulsed light source output pulse waveform is preferably greater than 50% of the pulse width, so that the refractive index of the dielectric waveguide layer changes relatively gently during one pulse period, and thus, the photodetector 312 There is sufficient response time to detect a change in intensity of the detection light, and the pulse waveform may preferably be a conventional pulse waveform such as a triangle, a Gaussian type or a hyperbolic tangent type.
  • the amplitude of the pulse light source is adjustable, and the variation range of the refractive index of the dielectric waveguide layer can be adjusted by adjusting the amplitude.
  • a light detecting device having a high detecting speed such as a photodetector, an optical sampling oscilloscope or a CCD, should be used to complete at least one measurement of the outputted detection light in one pulse period.
  • the output wavelength of the control light source 301 is 1550 nm, and the output waveform is a Gaussian pulse having a half-height width of 10 ps, a repetition frequency of 10 GHz, and a peak power of 520 mW.
  • the detection source 302 is a stable narrow-band monochromatic light source. In this example, a 980 nm semiconductor infrared laser source is used, and the average output power is 10 mW.
  • a filter 303 and a polarizing plate 304 for changing the detected light into P polarization are also provided on the output light path of the detecting light source.
  • the photodetector 312 uses a semiconductor ultra-high speed photodetector with a bandwidth of 40 GHz, and the detection area is preferably larger than the reflected spot area, and may be equal to or smaller than the reflected spot area according to actual needs.
  • the coupling optical element for detecting light incidence may be a semi-cylindrical prism or a 45760° right-angle prism.
  • a 45° right-angle prism is selected, and the glass material of the prism material is ZF7, and the refractive index corresponding to the incident light of 980 nm is 1. 7761.
  • the detection cell 31 0 of the WCSPR sensing measuring device shown in Fig. 3 is prepared from a transparent polydithiosilane PDMS material, and is bonded to the detecting chip through silica gel.
  • a) detecting light output from the light source is P-polarized, coupled into the glass substrate layer 306 by the prism 305, and the detected light is reflected by the sensor, and then measured by the photodetector system 311 to adjust the incident angle until the photodetector is used.
  • a waveguide coupling resonance peak can be detected;
  • test solution (mouse ant i-I gG in PBS buffer solution) into the detection cell 310 through a microfluidic syringe pump at a rate of 10 ⁇ ! 7 ⁇ in; when the antibody is detected in the solution ant i- IgG molecule After being combined with the modified human IgG molecule on the detected layer 31 3 , the refractive index of the detected layer 31 3 is changed; the coupling resonance angle of the sensor is changed, and the waveguide coupling resonance peak received by the photodetector moves or disappears;
  • the data processing system can obtain the refractive index of the dielectric waveguide layer when the waveguide coupling resonance occurs according to the time domain waveform and the detected light intensity recorded by the photodetector in the above steps a) to c), and those skilled in the art utilize these Parameters, according to the matching formula or calibration coefficient composed of Fresnel equation, can obtain the refractive index and / or thickness change of the detected layer, combined with the sample conditions and other information, and then can obtain human IgG and mouse ant i-IgG molecules Identify kinetic related data.
  • the refractive index of the dielectric waveguide layer varies with the instantaneous intensity of the control light pulse.
  • the range of the refractive index scan of the dielectric waveguide layer can be controlled according to actual needs. If the detected layer is combined with the acceptor in the sample to be tested, the refractive index of the detected layer changes too much. Large, so that the detector can not receive the waveguide coupling formant, you can try to increase the amplitude of the control source output pulse, and expand the refractive index scanning range of the dielectric waveguide layer.
  • the control light source of the embodiment uses a pulse light source
  • the light pulse is equivalent to repeatedly adjusting the intensity of the output light of the control light source in the amplitude range during the ascending and descending process
  • the refractive index of the dielectric waveguide layer is repeatedly changed to ensure
  • the photodetector can still detect the waveguide coupling formant
  • the data processing system can obtain the change of the refractive index of the dielectric waveguide layer according to the control light intensity corresponding to the re-detection of the waveguide coupling formant, thereby knowing the refraction of the detected layer.
  • Changes in the rate and/or thickness and those skilled in the art, in conjunction with information such as sample conditions, can provide data on the molecular recognition kinetics of human IgG and mouse ant i-IgG.
  • Fig. 4 is a graph showing the relative reflectance of the detection light under control light tuning as a function of time when the refractive indices of the detected layers are 1.459, 1.464 and 1.469, respectively. It can be seen from the figure that as the refractive index of the detected layer changes, the position of the resonance absorption peak also changes, and the larger the refractive index of the detected layer, the larger the time interval between the plasmon resonance peaks of the two surfaces.
  • Figure 5 shows the time interval between the refractive index of the detected layer and the surface plasmon resonance peak. It can be seen from the figure that as the refractive index of the detected layer increases, the time interval of the surface plasmon resonance absorption peak increases.
  • Fig. 6 is a graph showing the relationship between the reflectance (intensity) of the detected light and the refractive index of the dielectric waveguide layer measured by the apparatus shown in Fig. 3 when the refractive index of the detected layer is 1.464. From this curve, it was found that the refractive index of the dielectric waveguide layer corresponding to the plasmon resonance peak of the waveguide coupling surface under the structural condition of the present embodiment was 1.716.
  • each of FIG. 4 The pulse laser intensity corresponding to each moment is known, and according to formula (5), the time axis of the abscissa can be converted into the corresponding dielectric waveguide layer refractive index, which is actually FIG.

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Abstract

A waveguide coupled surface plasmon resonance sensor that can scan and detect quickly, a sensor measuring device and detecting method thereof are disclosed. A dielectric waveguide layer (102) of the sensor is made of nonlinear optical material.

Description

波导耦合表面等离子共振传感器及其检测装置和检测方法 技术领域  Waveguide coupling surface plasmon resonance sensor and detection device and detection method thereof
本发明涉及传感器及传感技术领域,具体涉及具有快速响应的表 面等离子共振传感器及其传感检测装置和检测方法。 背景技术  The present invention relates to the field of sensors and sensing technologies, and in particular to a surface plasmon resonance sensor having a fast response, a sensing detecting device and a detecting method thereof. Background technique
表面等离子共振(Surface Pl asmon Resonance , 简称为 SPR)是 一种物理光学现象, 是光波在两种介电常数符号相反的介质界面(例 如金属和玻璃界面) 产生的等离子振荡现象。 利用衰减全反射 ( At tenua ted Tota l Ref l ect ion, 简称为 ATR ) 方法, 可以将入射光 波的能量耦合进等离子波,引发金属表面的自由电子产生表面等离子 振荡。当电场分量平行入射平面的线偏振平面光波以特定角度入射在 界面上时, 表面等离子的波矢与 SPR倏逝波的波矢匹配, 其反射光能 量相比全反射时变小, 入射光能量耦合入表面等离子波, 从而导致反 射光能量显著减少。 这一特定的入射角度称为表面等离子共振角。通 过角度扫描, 可以在反射光谱上出现表面等离子共振峰(即反射强度 极小值)。 当与金属表面接触的介质折射率不同时, 表面等离子共振 角不同。通过测量表面等离子共振角的位置及其反射光强的变化, 就 可以得到金属表面附近介质的某些特性参数及其变化量。  Surface Plasmon Resonance (SPR) is a physical optical phenomenon that is a phenomenon of plasma oscillation caused by light waves at the interface of two dielectric constants (such as metal and glass interfaces). Using the At Tenua ted Tota Ref ect ion (ATR) method, the energy of the incident light wave can be coupled into the plasma wave to induce surface plasmon oscillation of the free electrons on the metal surface. When the linearly polarized plane light wave of the electric field component parallel to the incident plane is incident on the interface at a specific angle, the wave vector of the surface plasma matches the wave vector of the SPR evanescent wave, and the reflected light energy becomes smaller than that of the total reflection, and the incident light energy Coupled into the surface plasma waves, resulting in a significant reduction in reflected light energy. This particular angle of incidence is called the surface plasmon resonance angle. By angular scanning, surface plasmon resonance peaks (ie, minimum reflection intensity values) can appear on the reflection spectrum. When the refractive index of the medium in contact with the metal surface is different, the surface plasmon resonance angle is different. By measuring the position of the surface plasmon resonance angle and the change in its reflected light intensity, some characteristic parameters of the medium near the metal surface and the amount of change thereof can be obtained.
波导耦合表面等离子共振 ( Waveguide Coup l ed Surface P lasmon Resonance , 简称为 WCSPR )是一种 SPR共振模式
Figure imgf000003_0001
and Bioelectronics, 2004, vo l 20, p633-642 )。相比传统的 SPR检测方法, WCSPR检测方法可实现更高的灵敏度, 更大的信噪比和更宽的动态测 量范围。 实现 WCSPR检测的传感器结构, 主要由第一金属层, 介质波 导层, 第二金属层和被检测层组成。 测。 最常用的 SPR扫描模式有 种 ': 乡 ^
Waveguide Coup ed Surface P lasmon Resonance (WCSPR) is an SPR resonance mode.
Figure imgf000003_0001
And Bioelectronics, 2004, vo l 20, p633-642 ). Compared with the traditional SPR detection method, the WCSPR detection method can achieve higher sensitivity, larger signal-to-noise ratio and wider dynamic measurement range. The sensor structure for realizing WCSPR detection is mainly composed of a first metal layer, a dielectric waveguide layer, a second metal layer and a detected layer. Measurement. The most commonly used SPR scan mode has a kind of ': 乡^
1. 角度扫描方法(Angu lar Interroga t ion ): 这是传统 SPR检测 最常用的扫描方式。 该方法可以使用固定波长的光源, 通过机械装置 旋转 SPR检测结构或入射光源,从而改变入射光在 SPR检测结构界面上 的入射角度, 来寻找 SPR共振角。 角度扫描中旋转台的运行速度有限, 因此***扫描速度 4艮慢, 难以实现高时间分辨率的快速实时测量, 且 机械扫描装置也不利于***的小型化和高通量检测。该方法也可采用 聚焦光束, 而不是通常所用的***面光束, 作为入射光。 聚焦光束由 不同波矢量的平面波构成的, 因此不需要改变中心入射角, 就可以覆 盖一定的入射角度范围。该方法可以通过使用空间光检测器阵列器件1. Angle scanning method (Angu lar Interroga t ion ): This is the most common scanning method for traditional SPR detection. The method can use a fixed-wavelength light source to rotate the SPR detection structure or the incident light source by a mechanical device to change the incident angle of the incident light at the interface of the SPR detection structure to find the SPR resonance angle. In the angular scanning, the running speed of the rotating table is limited, so the scanning speed of the system is slow, and it is difficult to achieve fast real-time measurement with high time resolution, and the mechanical scanning device is also disadvantageous for system miniaturization and high-throughput detection. This method can also be used Focus the beam, not the near-plane beam that is typically used, as the incident light. The focused beam is composed of plane waves of different wave vectors, so that it is possible to cover a certain range of incident angles without changing the central incident angle. The method can be performed by using a spatial photodetector array device
(如 CCD等) 实现, 因此检测速度相对较快, 但受检测阵列电子器件 速度的限制最多只能达到几十 kHz的水平。 (such as CCD, etc.) is implemented, so the detection speed is relatively fast, but the speed of the detected array electronics can only reach a level of tens of kHz.
2、 波长扫描方法 ( Wavelength Interrogat ion ): 该方法是在入 射角度固定的情况下, 改变入射光的波长, 或以宽谱光源入射, 测量 在不同波长的光入射下的响应,来寻找能产生 SPR共振的对应光波长。 该方法要实现高分辨率的成本非常昂贵, 有关设备的体积也难以减 小, 扫描速度有限。  2. Wavelength Interrogation: This method is to change the wavelength of incident light when the angle of incidence is fixed, or to input a wide-spectrum light source to measure the response of light incident at different wavelengths. The corresponding light wavelength of the SPR resonance. The cost of achieving high resolution is very expensive, the volume of the device is difficult to reduce, and the scanning speed is limited.
3、 强度扫描方法(Intens i ty Interrogat ion): 该方法是在入射 角度固定, 入射波长和功率均固定的情况下, 通过测量反射光强的变 化, 来检测待测物质特性的变化。 强度扫描方法的检测速度较快, 但 其分辨率很低。  3. Intensity trajectory method: This method detects the change of the characteristics of the substance to be tested by measuring the change of the reflected light intensity when the incident angle is fixed and the incident wavelength and power are fixed. The intensity scanning method is faster, but its resolution is very low.
由于 SPR效应本身具有非常高的响应速度, 其响应时间在飞秒量 级, 但传统扫描方式的扫描速度较慢, 因此极大地制约了 SPR传感技 术在超快检测中的应用。 发明内容 本发明的目的是克服传统 WCSPR传感技术检测速度慢的缺陷, 从 而提供一种可以快速扫描和检测的 WCSPR传感器件。  Since the SPR effect itself has a very high response speed, its response time is on the order of femtoseconds, but the scanning speed of the conventional scanning method is slow, which greatly restricts the application of SPR sensing technology in ultrafast detection. SUMMARY OF THE INVENTION The object of the present invention is to overcome the drawbacks of the slow detection speed of the conventional WCSPR sensing technology, thereby providing a WCSPR sensor device that can be quickly scanned and detected.
本发明的另一目的是提供一种使用上述 WCSPR传感器的检测装 置。  Another object of the present invention is to provide a detecting device using the above WCSPR sensor.
本发明的又一目的是提供一种上述检测装置的检测方法。  It is still another object of the present invention to provide a detecting method of the above detecting device.
根据本发明的一个方面, 提供了波导耦合表面等离子共振传感 器, 包括介质波导层, 其中, 所述介质波导层的材料为非线性光学材 料。  According to an aspect of the invention, a waveguide coupling surface plasmon resonance sensor is provided, comprising a dielectric waveguide layer, wherein the material of the dielectric waveguide layer is a nonlinear optical material.
所述非线性光学材料优选三阶非线性光学材料, 例如由碳纳米 管、 二芳基茂铁、 酞菁、 卟啉、 聚二乙炔、 聚苯胺、 聚噻吩、 聚吡咯、 聚苯乙炔、 聚丙烯腈、 4, 4' -二吡啶金属配合物或偶氮苯类聚合物中 的一种或多种组成的三阶非线性光学材料。  The nonlinear optical material is preferably a third-order nonlinear optical material, such as carbon nanotubes, diarylferrocene, phthalocyanine, porphyrin, polydiacetylene, polyaniline, polythiophene, polypyrrole, polyphenylacetylene, poly A third-order nonlinear optical material composed of one or more of acrylonitrile, a 4, 4'-bipyridine metal complex or an azobenzene polymer.
所述介质波导层的厚度优选小于 100 μ ηι, 特别地, 所述介质波导 层的厚度更优选的范围为 1 μ m - 10 μ m。 所述传感器中, 优选至少在所述介质波导层两侧设置有包层, 且 所述包层的折射率应当小于所述介质波导层的折射率。所述包层的材 料可以优选光学玻璃、 聚合物、 光学晶体或金属等。 The thickness of the dielectric waveguide layer is preferably less than 100 μm, and in particular, the thickness of the dielectric waveguide layer is more preferably in the range of 1 μm - 10 μm. Preferably, in the sensor, at least a cladding layer is disposed on both sides of the dielectric waveguide layer, and a refractive index of the cladding layer should be smaller than a refractive index of the dielectric waveguide layer. The material of the cladding layer may preferably be an optical glass, a polymer, an optical crystal or a metal or the like.
另一方面,本发明提供了一种波导耦合表面等离子共振传感测量 装置, 包括上述传感器和用于改变所述介质波导层折射率的控制光 源。  In another aspect, the present invention provides a waveguide coupled surface plasmon resonance sensing measuring apparatus comprising the above sensor and a control light source for varying the refractive index of the dielectric waveguide layer.
上述传感测量装置中, 所述控制光源优选激光光源和 /或脉冲光 源。对于脉冲光源, 特别优选输出脉冲光的波形的上升沿和下降沿宽 度之和大于脉冲宽度的百分之五十。所述脉沖光源输出脉冲光的波形 优选三角型、 高斯型或双曲正切型。 另外, 所述脉沖光源优选输出脉 沖光的振幅可调的脉沖光源。  In the above sensing measuring device, the control light source is preferably a laser light source and/or a pulse light source. For the pulsed light source, it is particularly preferable that the sum of the rising edge and the falling edge width of the waveform of the output pulse light is larger than fifty percent of the pulse width. The waveform of the pulse light output pulse light is preferably a triangular type, a Gaussian type or a hyperbolic tangent type. Further, the pulse light source preferably outputs a pulse light source whose amplitude of the pulse light is adjustable.
上述传感测量装置中,还包括用于检测经过所述传感器反射的检 测光源输出光的光检测器件,在所述脉冲光源的一个脉沖周期内, 所 述光检测器件可以完成对输出检测光的至少一次测量,例如光电检测 器、 光釆样示波器或 CCD等。  The above-mentioned sensor measuring device further includes a light detecting device for detecting the output light of the detecting light source reflected by the sensor, wherein the light detecting device can complete the output detecting light during one pulse period of the pulse light source At least one measurement, such as a photodetector, a light-like oscilloscope, or a CCD.
又一方面,本发明还提供了上述波导耦合表面等离子共振传感测 量装置的传感检测方法, 包括以下步骤:  In still another aspect, the present invention provides a sensing method for the above-described waveguide coupled surface plasmon resonance sensing measuring device, comprising the following steps:
a )使检测光源输出的光入射到所述传感器的基底上, 并接收到 波导耦合共振峰;  a) causing the light output from the detecting light source to be incident on the substrate of the sensor and receiving the waveguide coupling formant;
b )将所述传感器的被检测层与待测物质发生反应, 使所述波导 耦合共振峰发生移动;  b) reacting the detected layer of the sensor with the substance to be tested to cause the waveguide coupling resonance peak to move;
c )将控制光源输出的控制光耦合入所述传感器的介质波导层, 使所述光检测器重新接收到所述波导耦合共振峰;  c) coupling control light that controls the output of the light source into the dielectric waveguide layer of the sensor, causing the photodetector to re-receive the waveguide coupling formant;
d )根据光检测器在上述步骤 a )至 c )过程中记录的波形信息, 得到被检测层的折射率和 /或厚度变化。  d) obtaining a change in refractive index and/or thickness of the detected layer based on the waveform information recorded by the photodetector during the above steps a) to c).
上述方法中, 所述步骤(c )还包括对所述控制光源输出的控制 光强度进行调节的步骤。  In the above method, the step (c) further comprises the step of adjusting the intensity of the control light output by the control light source.
上述方法中, 所述步骤(d ) 包括: 首先, 才艮据光检测器记录的 波形信息, 结合传感器介质波导层所使用材料的光学非线性特性,得 到波导耦合共振峰所对应的介质波导层折射率; 然后, 再由波导耦合 共振峰及其所对应的介质波导层折射率得到被检测层的折射率和 /或 厚度变化。  In the above method, the step (d) comprises: firstly, according to the waveform information recorded by the photodetector, combined with the optical nonlinear characteristics of the material used in the sensor dielectric waveguide layer, the dielectric waveguide layer corresponding to the waveguide coupling formant is obtained. Refractive index; Then, the refractive index and/or thickness variation of the detected layer is obtained by the waveguide coupling formant and its corresponding dielectric waveguide layer refractive index.
本发明具有以下优点: 超快全光调谐, 从而实现超高速 WCSPR扫描, 其扫描速度比现有 SPR 扫描方式可提高几个数量级。本发明基于脉沖光源所致三阶非线性效 应, 对于具有一定重复频率的短脉冲,每个脉冲可进行一次 SPR检测, 扫描时间取决于光脉冲的宽度。现有脉冲光源产生的脉沖宽度可以达 到几十飞秒或皮秒量级, 因此可以在极短的时间内进行 SPR信号的扫 描。 The invention has the following advantages: Ultra-fast all-optical tuning for ultra-high-speed WCSPR scanning with scan speeds that are orders of magnitude higher than existing SPR scanning methods. The invention is based on the third-order nonlinear effect caused by the pulse light source. For short pulses with a certain repetition frequency, each pulse can be subjected to SPR detection, and the scanning time depends on the width of the light pulse. The pulse width generated by the existing pulse light source can reach the order of several tens of femtoseconds or picoseconds, so that the SPR signal can be scanned in a very short time.
2. 本发明可用于实时监测物理、 化学或生物等过程, 得到时间 分辨率极高的过程信息。进行一次扫描的时间就是一个脉沖的时域宽 度, 由于脉沖的时域宽度可以非常窄, 可以到飞秒量级, 因此扫描速 度可以非常快,从而可实现对超快反应过程的连续扫描, 即可在精细 的时间轴上监测整个反应过程, 得到精确的动力学曲线等过程信息。  2. The present invention can be used to monitor physical, chemical or biological processes in real time, and obtain process information with extremely high time resolution. The time to perform a scan is the time-domain width of a pulse. Since the time-domain width of the pulse can be very narrow and can reach the order of femtoseconds, the scanning speed can be very fast, so that continuous scanning of the ultra-fast reaction process can be realized. The entire reaction process can be monitored on a fine time axis to obtain process information such as accurate kinetic curves.
3. 本发明可用于监测快速生化反应过程。 SPR传感器件多用于生 化检测, 对生化反应过程进行动态监测, 进而获得生物动力学信息是 其中一项很有意义的应用。而现有 SPR传感***由于扫描速度的限制 , 对于一些反应时间较短(在秒或以下量级)的生化反应, 很难动态监 测其反应过程。本发明可在动力学曲线的时间轴上大大提高时间分辨 率, 对快速生化反应的反应机理进行动力学监测。  3. The invention can be used to monitor rapid biochemical reaction processes. SPR sensor components are mostly used for biochemical detection, and dynamic monitoring of biochemical reaction processes to obtain biodynamic information is one of the most significant applications. However, due to the limitation of scanning speed, the existing SPR sensing system is difficult to dynamically monitor the reaction process for some biochemical reactions with short reaction times (on the order of seconds or less). The invention can greatly improve the time resolution on the time axis of the kinetic curve and dynamically monitor the reaction mechanism of the rapid biochemical reaction.
4. 按本发明的方法实现的传感***中的光电***部分的光源、 检测结构、 光检测器等都可以集成化, 便于实现***的小型化和便携 化。 附图说明 图 1 是超快全光调谐 WCSPR传感芯片的基本结构。 其中 1为第一 金属层, 2为介质波导层, 3为第二金属层, 4为被检测层, 5为流体层, 6为基底层。  4. The light source, detection structure, photodetector, etc. of the optoelectronic system portion of the sensing system implemented by the method of the present invention can be integrated to facilitate miniaturization and portability of the system. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is the basic structure of an ultrafast all-optical tuned WCSPR sensor chip. 1 is the first metal layer, 2 is the dielectric waveguide layer, 3 is the second metal layer, 4 is the detected layer, 5 is the fluid layer, and 6 is the base layer.
图 2 是可实现超快全光波导耦合表面等离子共振的传感器结 构。  Figure 2 shows the sensor structure for plasmon resonance of an ultrafast all-optical waveguide coupled surface.
图 3 是一个超快全光调谐的 WCSPR传感检测***示意图。  Figure 3 is a schematic diagram of an ultrafast all-optical tuned WCSPR sensing system.
图 4 是改变被测层折射率条件下, 检测光反射强度随时间变化 的曲线。  Figure 4 is a graph showing the change in the intensity of reflected light over time in the case of changing the refractive index of the measured layer.
图 5 是检测光反射信号的时间与强度曲线的两个最低点间距与 被测层折射率之间的关系曲线。 图 6 是检测光反射率随介质波导层折射率的变化曲线。 具体实施方式: 本发明采用波导耦合表面等离子共振结构作为传感器的基本结 构, 通过调谐光改变介质波导层的光学特性参数 (如折射率)对检测 光的 WCSPR响应进行调制, 来获取被检测样品的信息, 实现对被检测 样品的快速检测。 Figure 5 is a graph showing the relationship between the two lowest point spacings of the time and intensity curves of the detected light reflection signal and the refractive index of the measured layer. Figure 6 is a graph showing the change in reflectance of light with the refractive index of the dielectric waveguide layer. DETAILED DESCRIPTION OF THE INVENTION The present invention adopts a waveguide-coupled surface plasmon resonance structure as a basic structure of a sensor, and modulates the WCSPR response of the detection light by tuning optical characteristics of the dielectric waveguide layer (such as refractive index) to obtain a sample to be detected. Information to achieve rapid detection of the sample being tested.
图 1所显示的 WCSPR结构中包含多层结构。在第二金属层 103与被检 测层 104界面上产生的表面等离子共振波矢受介质波导层 102的波导 模式特性的影响。 因为表面等离子共振只能由入射光的 TM模式所激 发,在介质波导层 102和第二金属层 103之间界面的 TM模式的反射可表 示为:  The WCSPR structure shown in Figure 1 contains a multi-layer structure. The surface plasmon resonance wave vector generated at the interface between the second metal layer 103 and the layer to be detected 104 is affected by the waveguide mode characteristics of the dielectric waveguide layer 102. Since surface plasmon resonance can only be excited by the TM mode of incident light, the TM mode reflection at the interface between dielectric waveguide layer 102 and second metal layer 103 can be expressed as:
r k = K^ -Kke, (1) 其中 表示在第 i, k层界面上光波的反射率, i,k = Q, l, 2 - - - ,r k = K^ -K k e, (1) where is the reflectivity of the light wave at the i-th, k-layer interface, i, k = Q, l, 2 - - - ,
= ~k 表示第 i层中波矢的 z方向分量, 表示第 k层中波矢的 z 方向分量, 表示第 k层材料的介电常数, 表示第 i层材料的介电常 数, 理论上的反射率方程可表示为: = ~ k represents the z-direction component of the wave vector in the i-th layer, represents the z-direction component of the wave vector in the k-th layer, represents the dielectric constant of the material of the k-th layer, and represents the dielectric constant of the material of the i-th layer, theoretically The reflectivity equation can be expressed as:
其中. ( among them. (
、 ' ',2' '" 1
Figure imgf000007_0001
, '' , 2 ''" 1
Figure imgf000007_0001
对光波导共振模式, 反射光的相位可表示为:  For the optical waveguide resonance mode, the phase of the reflected light can be expressed as:
2kzid = 2mn - (Φ,_, , + Φ, ,+1 ), w = 0,1,2··· (4) 其中, 是波导层的总厚度; d„是第 η层波导层的厚度; _为虚部 符号; η表示波导层数, 0, 1…等为对应波导层标号; R表示从第 0层 波导层入射、 经过层层波导反射、 回到第 0层波导层中的反射率; rx ,„表示入射光从第 1层波导层入射, 经过第 2至第 n层波导层的反 射, 回到第 1层波导层的反射系数; 表示在第 n-1层波导层中光波 沿 z方向的传播系数; 中的 对应波导层的标号, «是波导内的模式 号, Φ, ,+1表示相邻两层之间界面上光波反射引起的相移。 2k zi d = 2mn - (Φ, _, , + Φ, , +1 ), w = 0,1,2··· (4) where is the total thickness of the waveguide layer; d„ is the n-th waveguide layer Thickness; _ is the imaginary part symbol; η represents the number of waveguide layers, 0, 1...etc. is the corresponding waveguide layer label; R represents the incident from the 0th layer waveguide layer, the layered waveguide reflection, and the return to the 0th layer waveguide layer. The reflectivity; r x , „ indicates the incident light incident from the first waveguide layer, the reflection from the second to n-th waveguide layers, and the reflection coefficient back to the first waveguide layer; indicating the n-1th waveguide The propagation coefficient of the light wave in the layer along the z direction; the number of the corresponding waveguide layer in the layer, « is the mode number in the waveguide, Φ, , +1 represents the phase shift caused by the reflection of light waves at the interface between two adjacent layers.
本发明采用具有三阶非线性光学效应的材料作为 WCSPR传感结构 中的光学介质层材料,该材料的折射率等光学物性参数可随入射光的 电磁场强度发生改变。 下面的具体实施方式中均以具有三阶非线性光学效应的材料为 例。三阶非线性光学效应起源于三阶电极化率, 光的电磁场可以导致 三阶非线性光学材料的折射率发生变化, 即光强相关的折射率效应。 具有三阶非线性光学效应的材料的折射率 可表示成: The invention adopts a material having a third-order nonlinear optical effect as an optical medium layer material in the WCSPR sensing structure, and the optical physical property parameters such as the refractive index of the material may change with the electromagnetic field intensity of the incident light. In the following specific embodiments, materials having a third-order nonlinear optical effect are exemplified. The third-order nonlinear optical effect originates from the third-order polarization rate, and the electromagnetic field of the light can cause the refractive index of the third-order nonlinear optical material to change, that is, the refractive index effect related to the light intensity. The refractive index of a material having a third-order nonlinear optical effect can be expressed as:
fi = nQ Λ- ril (5) Fi = n Q Λ- ril (5)
其中 是与光强无关的线性折射率, I 为光强, "'是与三阶电 极化率有关的非线性折射率系数:
Figure imgf000008_0001
Where is the linear refractive index independent of the light intensity, I is the light intensity, "' is the nonlinear refractive index coefficient related to the third-order polarization rate:
Figure imgf000008_0001
式中, Re表示实数部分, ^,为三阶电极化率 3)的四阶张量中 对折射率变化有贡献的部分。 Where Re represents the real part, and ^ is the part of the fourth-order tensor of the third-order polarization rate 3) that contributes to the change in refractive index.
方程(5)表明三阶非线性材料的折射率变化与光强和材料三阶非 线性系数的大小存在线性的对应关系。因此通过改变调谐光的光强可 以对介质波导层的折射率进行调制, 从而改变 WCSPR传感器中检测光 的 WCSPR共振条件, 实现 WCSPR调制。  Equation (5) shows that there is a linear correspondence between the refractive index change of the third-order nonlinear material and the magnitude of the light intensity and the third-order nonlinear coefficient of the material. Therefore, by changing the intensity of the tuned light, the refractive index of the dielectric waveguide layer can be modulated, thereby changing the WCSPR resonance condition of the detected light in the WCSPR sensor, and realizing WCSPR modulation.
目前使用掺杂聚合物已经可以获得三阶非线性光学系数高达 1. 87 X l (T6m2/W的三阶非线性波导材料(Proc. SPIE 2693, 523-531 , 1996 )。 通过光刻等已经非常成熟的平面光波导加工方法可将其制备 成本发明所要求的波导结构。 At present, a third-order nonlinear optical waveguide material with a third-order nonlinear optical coefficient of 1.87 X l (T 6 m 2 /W) can be obtained using a doped polymer (Proc. SPIE 2693, 523-531, 1996). The already well-developed planar optical waveguide processing method can be fabricated into the waveguide structure required by the invention.
目前, 短光脉冲的产生技术主要有 Q开关技术和锁模技术两种。 使用锁模技术可以实现脉宽 <1 ps、 峰值功率〉 10 kW、 重复频率 >10 GHz , 时间抖动 <10 f s的脉冲激光器。 目前已经有成熟的脉沖激光器 用作商用。 采用光栅、 空间相位调制器、 光纤光栅等器件可以实现频 域的精确相位编码, 从而在时域实现脉冲形状控制( IEEE J. Quantum E lec tron. , 1992 , vol. 28, pp. 908 920 )。  At present, the short-light pulse generation technology mainly includes two kinds of Q-switching technology and mode-locking technology. A pulsed laser with pulse width <1 ps, peak power > 10 kW, repetition rate >10 GHz and time jitter <10 f s can be achieved using mode-locking technology. There are already mature pulsed lasers for commercial use. A precise phase encoding in the frequency domain can be achieved by means of gratings, spatial phase modulators, fiber gratings, etc., to achieve pulse shape control in the time domain (IEEE J. Quantum E. tron., 1992, vol. 28, pp. 908 920) .
如图 1所示的传感器结构, 该传感器由多层膜构成, 由上至下依 次为透明基底层 106、 第一金属层 101、 介质波导层 102、 第二金属层 103和被检测层 104 ,所述介质波导层 102的材料使用非线性光学材料, 特别是三阶非线性光学材料,如碳纳米管、二芳基茂铁、酞菁、卟淋、 聚二乙炔、 聚苯胺、 聚噻吩、 聚吡咯、 聚苯乙炔、 聚丙烯腈、 4, 4' -二吡啶金属配合物或偶氮苯类聚合物等, 实际应用中, 既可以单独 使用一种上述三阶非线性光学材料,也可以使用由两种或多种上述三 阶非线性光学材料形成的复合光学材料。 一般来说, 这种介质波导层 102的厚度应当大于检测光的波长, 小于 Ι ΟΟ μ ιη, 特别地, 优选范围 是 Ι μ πι- 10 μ πι。 而被检测层 104上包含配体, 可以与待测溶液中的受 体发生反应, 从而改变被检测层 104的性质, 使得其厚度或折射率等 发生变化。 The sensor structure shown in FIG. 1 is composed of a multilayer film, which is a transparent base layer 106, a first metal layer 101, a dielectric waveguide layer 102, a second metal layer 103, and a detected layer 104, from top to bottom. The material of the dielectric waveguide layer 102 uses a nonlinear optical material, particularly a third-order nonlinear optical material such as carbon nanotubes, diarylferrocene, phthalocyanine, guanidine, polydiacetylene, polyaniline, polythiophene, Polypyrrole, polyphenylacetylene, polyacrylonitrile, 4, 4'-bipyridine metal complex or azobenzene polymer, etc. In practical applications, one of the above third-order nonlinear optical materials may be used alone or A composite optical material formed of two or more of the above third-order nonlinear optical materials is used. In general, the thickness of the dielectric waveguide layer 102 should be greater than the wavelength of the detection light, which is less than Ι ΟΟ μ η, and particularly preferably, the range is Ι μ πι - 10 μ πι. The ligand layer 104 contains a ligand, which can be affected by the solution to be tested. The body reacts to change the properties of the layer to be detected 104 such that its thickness or refractive index changes.
图 2a和图 2b为本发明的波导耦合表面等离子共振传感器的另外 两种结构, 由于两种结构非常近似, 所以在图 2a和图 2b中使用了相 同的附图标记表示功能相同的部分。从图 2a和图 2b中可以看到, 这 两种传感器都包括基底层 206、 第一金属层 201、 介质波导层 202、 第二金属层 203和被检测层 204, 另外, 图 2a和图 2b中还设有包层 207 ,包层 207既可以仅设置在介质波导层 202的两侧(如图 2b所示), 也可以同时设置在第一金属层 201、介质波导层 202和第二金属层 203 的两侧(如图 2a所示), 所述包层 207的作用是将由端面耦合进入介 质波导层 202的脉沖激光控制在介质波导层 202内传播,包层 207的 材料可以选择例如光学玻璃、 聚合物、 光学晶体或金属等, 但其折射 率应当小于所述介质波导层材料的折射率。  2a and 2b show two other structures of the waveguide coupled surface plasmon resonance sensor of the present invention. Since the two structures are very similar, the same reference numerals are used in Figs. 2a and 2b to indicate the functionally equivalent portions. As can be seen from Figures 2a and 2b, both sensors comprise a base layer 206, a first metal layer 201, a dielectric waveguide layer 202, a second metal layer 203 and a detected layer 204, in addition, Figures 2a and 2b A cladding layer 207 is also provided, and the cladding layer 207 may be disposed only on both sides of the dielectric waveguide layer 202 (as shown in FIG. 2b), or may be disposed on the first metal layer 201, the dielectric waveguide layer 202, and the second metal at the same time. On both sides of the layer 203 (as shown in FIG. 2a), the cladding layer 207 functions to control the pulsed laser light that is coupled into the dielectric waveguide layer 202 by the end face to propagate in the dielectric waveguide layer 202. The material of the cladding layer 207 can be selected, for example, optically. Glass, polymer, optical crystal or metal, etc., but whose refractive index should be less than the refractive index of the dielectric waveguide layer material.
图 3 是一种波导耦合表面等离子共振传感测量装置的结构示意 图。 其中, 传感器的芯片结构与图 2b相同。 基底层 306材料采用的 玻璃牌号为 ZF7 , 其对应 980nm入射光的折射率为 1. 7761。 第一金属 层 307和第二金属层 309材料为纯金,厚度为 20 nm。介质波导层 308 的横截面积为 2pm x 2μπι, 厚度为 2 μιη, 其材料选用三阶非线性材料 2, 9, 16, 23-四(苯硫基) - 29Η, 31Η-酞菁(以下简称 PthPC ), 其线性 折射率为 = 1. 618, 三阶非线性系数为《' =10— 12 m2/W, 将 PthPc掺 杂到聚碳酸酯(简称 PC ) 中, 掺杂浓度为 20 wt%, 通过旋转涂布的 方法在第一金属层 307上制备成厚度均匀的介质波导层 308薄膜。包 层(图 3中未示出)材料也为纯金, 通过掩膜蒸镀的方法制备。 被检 测层 313用 16-巯基十六烷基羧酸共价连接 IgG分子作为生化修饰, 厚度约为 3 nm。 Fig. 3 is a schematic structural view of a waveguide coupled surface plasmon resonance sensing measuring device. The chip structure of the sensor is the same as that of FIG. 2b. 761. The refractive index of the 980 nm incident light is 1. 7761. The first metal layer 307 and the second metal layer 309 are made of pure gold and have a thickness of 20 nm. The dielectric waveguide layer 308 has a cross-sectional area of 2 pm x 2 μm and a thickness of 2 μm, and the material is selected from a third-order nonlinear material 2, 9, 16, 23-tetrakis(phenylthio)- 29 Η, 31 Η-phthalocyanine (hereinafter referred to as PthPC ), whose linear refractive index is = 1. 618, the third-order nonlinear coefficient is '= 10-12 m 2 /W, PthPc is doped into polycarbonate (referred to as PC), and the doping concentration is 20 wt %, a thin film of the dielectric waveguide layer 308 having a uniform thickness is prepared on the first metal layer 307 by a spin coating method. The cladding (not shown in Figure 3) material is also pure gold and is prepared by mask evaporation. The detected layer 313 was covalently attached to the IgG molecule with 16-mercaptohexadecylcarboxylic acid as a biochemical modification to a thickness of about 3 nm.
本实施例中的 WCSPR传感检测装置还包括控制光源 301,检测光光 源 302和光检测器 312。  The WCSPR sensing detecting device in this embodiment further includes a control light source 301, a detecting light source 302 and a photodetector 312.
其中, 如果使用普通的控制光源, 随着被检测层 313折射率的变 化, 需要反复不断的调谐控制光源输出控制光的强度,很难实现更高 速度的检测, 而如果将超快脉冲激光作为控制光源, 则每个脉冲的上 升和下降沿都可以视作对控制光强度的一次扫描, 根据公式(5 ), 控 制光强度的扫描和变化可以调谐介质波导层的折射率,从而实现对介 质波导层折射率在一定范围内的扫描和调谐, 由于现有技术中, 脉沖 光源的频率可以达到 10GHz以上, 从而真正实现了高速扫描。 进一步地,所述脉冲光源输出脉冲波形的上升沿和下降沿宽度之 和优选大于脉沖宽度的 50%, 从而使得介质波导层折射率在一个脉沖 的周期内变化比较平緩, 这样, 光检测器 312有充足的响应时间, 可 以检测到检测光的强度变化, 所述的脉沖波形可以优选例如三角形、 高斯型或双曲正切型等常规脉冲波形。 Wherein, if an ordinary control light source is used, as the refractive index of the detected layer 313 changes, it is necessary to repeatedly and tune the intensity of the control light output control light, and it is difficult to achieve higher speed detection, and if the ultrafast pulse laser is used To control the light source, the rising and falling edges of each pulse can be regarded as one scan of the control light intensity. According to formula (5), the scanning and variation of the control light intensity can modulate the refractive index of the dielectric waveguide layer, thereby realizing the medium. The scanning and tuning of the refractive index of the waveguide layer is within a certain range. Since the frequency of the pulsed light source can reach above 10 GHz in the prior art, high-speed scanning is truly realized. Further, the sum of the rising edge and the falling edge width of the pulsed light source output pulse waveform is preferably greater than 50% of the pulse width, so that the refractive index of the dielectric waveguide layer changes relatively gently during one pulse period, and thus, the photodetector 312 There is sufficient response time to detect a change in intensity of the detection light, and the pulse waveform may preferably be a conventional pulse waveform such as a triangle, a Gaussian type or a hyperbolic tangent type.
另夕卜, 优选脉冲光源的振幅是可以调节的, 通过调节振幅可以调 节介质波导层折射率的变化范围。  Further, it is preferable that the amplitude of the pulse light source is adjustable, and the variation range of the refractive index of the dielectric waveguide layer can be adjusted by adjusting the amplitude.
相应于优选的高频率脉沖光源,应当使用具有高检测速度的光检 测器件, 例如光电检测器、 光采样示波器或 CCD等, 以在一个脉沖周 期内至少完成对输出的检测光的一次测量。  Corresponding to the preferred high frequency pulsed light source, a light detecting device having a high detecting speed, such as a photodetector, an optical sampling oscilloscope or a CCD, should be used to complete at least one measurement of the outputted detection light in one pulse period.
在本实施例中, 控制光源 301的输出波长为 1550 nm, 输出波形为 半高宽 10 ps的高斯型脉沖, 重复频率 10 GHz , 峰值功率为 520 mW。 检测光源 302为稳定窄带单色光光源, 在本例中选用波长 980 nm半导 体红外激光光源, 平均输出功率为 10 mW。 检测光源的输出光路上还 设置有用于将检测光变成 P偏振的滤波片 303和偏振片 304。 所述光检 测器 312采用半导体超高速光电检测器, 带宽为 40 GHz , 检测面积优 选大于反射光斑面积,根据实际需要, 也可以等于或小于反射光斑面 积。  In the present embodiment, the output wavelength of the control light source 301 is 1550 nm, and the output waveform is a Gaussian pulse having a half-height width of 10 ps, a repetition frequency of 10 GHz, and a peak power of 520 mW. The detection source 302 is a stable narrow-band monochromatic light source. In this example, a 980 nm semiconductor infrared laser source is used, and the average output power is 10 mW. A filter 303 and a polarizing plate 304 for changing the detected light into P polarization are also provided on the output light path of the detecting light source. The photodetector 312 uses a semiconductor ultra-high speed photodetector with a bandwidth of 40 GHz, and the detection area is preferably larger than the reflected spot area, and may be equal to or smaller than the reflected spot area according to actual needs.
其中检测光入射的耦合光学元件可采用半圓柱形棱镜或 45760° 直角棱镜, 本实例中选用的是 45°直角棱镜, 棱镜材料的玻璃牌号为 ZF7 , 相应于 980nm入射光的折射率为 1. 7761。  The coupling optical element for detecting light incidence may be a semi-cylindrical prism or a 45760° right-angle prism. In this example, a 45° right-angle prism is selected, and the glass material of the prism material is ZF7, and the refractive index corresponding to the incident light of 980 nm is 1. 7761.
图 3中所示 WCSPR传感测量装置的检测池 31 0用透明的聚二曱基硅 烷 PDMS材料制备, 与检测芯片通过硅胶密合。  The detection cell 31 0 of the WCSPR sensing measuring device shown in Fig. 3 is prepared from a transparent polydithiosilane PDMS material, and is bonded to the detecting chip through silica gel.
在检测过程中, 具体步骤如下:  In the detection process, the specific steps are as follows:
a )检测光源输出的检测光经过 P偏振后, 由棱镜 305耦合进入玻 璃基底层 306中,检测光经过传感器反射后由光电检测器*** 311对其 进行测量,调节入射角度, 直至使用光检测器可以探测到波导耦合共 振峰;  a) detecting light output from the light source is P-polarized, coupled into the glass substrate layer 306 by the prism 305, and the detected light is reflected by the sensor, and then measured by the photodetector system 311 to adjust the incident angle until the photodetector is used. A waveguide coupling resonance peak can be detected;
b )然后将被检测溶液(小鼠 ant i- I gG的 PBS緩沖溶液)通过微流 注射泵以 10 μ!7ιη i n的速度注入检测池 310; 当被检测溶液中的抗体 ant i- IgG分子与被检测层 31 3上修饰的人 IgG分子复合后, 被检测层 31 3的折射率发生改变; 使得传感器的耦合共振角度发生改变, 光检 测器接收到的波导耦合共振峰发生移动或消失;  b) then injecting the test solution (mouse ant i-I gG in PBS buffer solution) into the detection cell 310 through a microfluidic syringe pump at a rate of 10 μ! 7 ηη in; when the antibody is detected in the solution ant i- IgG molecule After being combined with the modified human IgG molecule on the detected layer 31 3 , the refractive index of the detected layer 31 3 is changed; the coupling resonance angle of the sensor is changed, and the waveguide coupling resonance peak received by the photodetector moves or disappears;
c )将控制光源输出的控制光直接耦合入传感器的介质波导层, 调节控制光源输出控制光的强度,从而使介质波导层的折射率发生变 化, 直至所述光检测器重新接收到所述波导耦合共振峰为止; c) directly coupling the control light that controls the output of the light source into the dielectric waveguide layer of the sensor, Adjusting the intensity of the control light source output control light to change the refractive index of the dielectric waveguide layer until the photodetector receives the waveguide coupling resonance peak again;
d )数据处理***根据光检测器在上述步骤 a ) 至 c ) 过程中记录 的时域波形和检测光强度,就可以得到发生波导耦合共振时介质波导 层的折射率, 本领域技术人员利用这些参数, 再根据 Fresnel方程组 成的匹配公式或标定系数, 就可以得到被检测层的折射率和 /或厚度 变化, 再结合样品条件等信息, 进而可以得到人 IgG与小鼠 ant i-IgG 的分子识别动力学相关数据。  d) The data processing system can obtain the refractive index of the dielectric waveguide layer when the waveguide coupling resonance occurs according to the time domain waveform and the detected light intensity recorded by the photodetector in the above steps a) to c), and those skilled in the art utilize these Parameters, according to the matching formula or calibration coefficient composed of Fresnel equation, can obtain the refractive index and / or thickness change of the detected layer, combined with the sample conditions and other information, and then can obtain human IgG and mouse ant i-IgG molecules Identify kinetic related data.
本实施例中,介质波导层的折射率随着控制光脉沖瞬时强度而变 化。通过调节控制光的光脉沖振幅, 就可以根据实际需要控制对介质 波导层折射率扫描的范围,如果被检测层与待测样品中的受体相结合 后, 导致被检测层折射率的变化太大,使得检测器接收不到波导耦合 共振峰, 可以尝试增大控制光源输出脉冲的振幅, 扩大介质波导层折 射率扫描范围。  In this embodiment, the refractive index of the dielectric waveguide layer varies with the instantaneous intensity of the control light pulse. By adjusting the amplitude of the light pulse of the control light, the range of the refractive index scan of the dielectric waveguide layer can be controlled according to actual needs. If the detected layer is combined with the acceptor in the sample to be tested, the refractive index of the detected layer changes too much. Large, so that the detector can not receive the waveguide coupling formant, you can try to increase the amplitude of the control source output pulse, and expand the refractive index scanning range of the dielectric waveguide layer.
由于本实施例的控制光源使用了脉沖光源,光脉沖在上升和下降 过程中就相当于在振幅范围内反复调节控制光源输出控制光的强度, 介质波导层的折射率也随之反复变化,保证了光检测器仍然可以检测 到波导耦合共振峰,数据处理***根据重新检测到波导耦合共振峰时 所对应的控制光强度, 就可以得到介质波导层折射率的变化, 从而得 知被检测层折射率和 /或厚度的变化, 本领域技术人员再结合样品条 件等信息, 就可以得到人 IgG与小鼠 ant i- IgG的分子识别动力学相关 数据。  Since the control light source of the embodiment uses a pulse light source, the light pulse is equivalent to repeatedly adjusting the intensity of the output light of the control light source in the amplitude range during the ascending and descending process, and the refractive index of the dielectric waveguide layer is repeatedly changed to ensure The photodetector can still detect the waveguide coupling formant, and the data processing system can obtain the change of the refractive index of the dielectric waveguide layer according to the control light intensity corresponding to the re-detection of the waveguide coupling formant, thereby knowing the refraction of the detected layer. Changes in the rate and/or thickness, and those skilled in the art, in conjunction with information such as sample conditions, can provide data on the molecular recognition kinetics of human IgG and mouse ant i-IgG.
图 4是所述被检测层折射率分别为 1. 459、 1. 464和 1. 469时, 检测 光在控制光调谐下的相对反射率随时间变化的曲线。 从图中可以看 出, 随着被检测层折射率的改变, 共振吸收峰的位置也随之变化, 且 被检测层折射率越大 , 两个表面等离子共振峰之间的时间间距越大。  Fig. 4 is a graph showing the relative reflectance of the detection light under control light tuning as a function of time when the refractive indices of the detected layers are 1.459, 1.464 and 1.469, respectively. It can be seen from the figure that as the refractive index of the detected layer changes, the position of the resonance absorption peak also changes, and the larger the refractive index of the detected layer, the larger the time interval between the plasmon resonance peaks of the two surfaces.
图 5给出了被检测层折射率与表面等离子共振峰时间间距的曲 线, 从图中可以看出, 随着被检测层折射率的增大, 表面等离子共振 吸收峰的时间间距不断增加。  Figure 5 shows the time interval between the refractive index of the detected layer and the surface plasmon resonance peak. It can be seen from the figure that as the refractive index of the detected layer increases, the time interval of the surface plasmon resonance absorption peak increases.
图 6是在被检测层折射率为 1. 464时, 由图 3所示装置测量得到的 检测光反射率(强度)与介质波导层折射率的关系曲线。 从该曲线中 可以得到在本实施例的结构条件下波导耦合表面等离子共振峰所对 应的介质波导层的折射率为 1. 716。  Fig. 6 is a graph showing the relationship between the reflectance (intensity) of the detected light and the refractive index of the dielectric waveguide layer measured by the apparatus shown in Fig. 3 when the refractive index of the detected layer is 1.464. From this curve, it was found that the refractive index of the dielectric waveguide layer corresponding to the plasmon resonance peak of the waveguide coupling surface under the structural condition of the present embodiment was 1.716.
由于本实施例中采用的是脉冲激光作为控制光源, 所以图 4中每 个时刻对应的脉沖激光强度都是已知的, 再根据公式(5 ), 就可以将 横坐标的时间轴转换成相应的介质波导层折射率,这实际上就是图 6。 Since the pulse laser is used as the control light source in this embodiment, each of FIG. 4 The pulse laser intensity corresponding to each moment is known, and according to formula (5), the time axis of the abscissa can be converted into the corresponding dielectric waveguide layer refractive index, which is actually FIG.
最后应说明的是, 以上各附图中的实施例仅用以说明本发明的 表面等离子共振传感器的结构及其检测方法, 但非限制。 尽管参照 实施例对本发明进行了详细说明, 本领域的普通技术人员应当理 解, 对本发明的技术方案进行修改或者等同替换, 都不脱离本发明 技术方案的精神和范围, 其均应涵盖在本发明的权利要求范围当 中。  Finally, it should be noted that the embodiments in the above drawings are only for explaining the structure of the surface plasmon resonance sensor of the present invention and the detection method thereof, but are not limited. While the invention has been described in detail herein with reference to the embodiments of the embodiments of the present invention Within the scope of the claims.

Claims

权 利 要 求 Rights request
1. 一种波导耦合表面等离子共振传感器, 包括介质波导层, 其中, 所述介质波导层的材料为非线性光学材料。  A waveguide coupled surface plasmon resonance sensor comprising a dielectric waveguide layer, wherein a material of the dielectric waveguide layer is a nonlinear optical material.
2. 根据权利要求 1所述的传感器, 其特征在于, 所述非线性光学材料 为三阶非线性光学材料。  2. The sensor of claim 1 wherein the nonlinear optical material is a third order nonlinear optical material.
3. 根据权利要求 2所述的传感器, 其特征在于, 所述三阶非线性光学 材料由碳纳米管、 二芳基茂铁、 酞菁、 卟啉、 聚二乙炔、 聚苯胺、 聚噻吩、 聚吡咯、 聚苯乙炔、 聚丙烯腈、 4, 4' -二吡啶金属配合 物或偶氮苯类聚合物中的一种或多种组成。  The sensor according to claim 2, wherein the third-order nonlinear optical material is composed of carbon nanotubes, diarylferrocene, phthalocyanine, porphyrin, polydiacetylene, polyaniline, polythiophene, One or more of polypyrrole, polyphenylacetylene, polyacrylonitrile, 4,4'-bipyridine metal complex or azobenzene polymer.
4. 根据权利要求 2所述的传感器, 其特征在于, 所述介质波导层的厚 度小于 100 μ ιη。  The sensor according to claim 2, wherein the dielectric waveguide layer has a thickness of less than 100 μm.
5. 根据权利要求 4所述的传感器, 其特征在于, 所述介质波导层的厚 度范围为 Ι μ πι - 10 μ πι。  The sensor according to claim 4, wherein the dielectric waveguide layer has a thickness ranging from Ι μ πι - 10 μ πι.
6. 根据权利要求 2所述的传感器, 其特征在于, 至少在所述介质波导 层两侧设置有包层, 且所述包层的折射率小于所述介质波导层的 折射率。  The sensor according to claim 2, wherein a cladding layer is disposed at least on both sides of the dielectric waveguide layer, and a refractive index of the cladding layer is smaller than a refractive index of the dielectric waveguide layer.
7. 根据权利要求 6所述的传感器, 其特征在于, 所述包层的材料为光 学玻璃、 聚合物、 光学晶体或金属。  7. The sensor according to claim 6, wherein the cladding material is an optical glass, a polymer, an optical crystal or a metal.
8. 一种波导耦合表面等离子共振传感测量装置, 包括权利要求 1 - 7 任一项所述的传感器和用于改变所述介质波导层折射率的控制光 源。  A waveguide coupling surface plasmon resonance sensing measuring apparatus comprising the sensor according to any one of claims 1 to 7 and a control light source for changing a refractive index of the dielectric waveguide layer.
9. 根据权利要求 8所述的测量装置, 其特征在于, 所述控制光源为激 光光源。  9. The measuring device according to claim 8, wherein the control light source is a laser light source.
10. 根据权利要求 8或 9所述的测量装置, 其特征在于, 所述控制光 源为脉沖光源。  10. Measuring device according to claim 8 or 9, characterized in that the control light source is a pulsed light source.
11. 根据权利要求 10所述的测量装置, 其特征在于, 所述脉冲光源 输出脉沖光的波形的上升沿和下降沿宽度之和大于脉冲宽度的百 分之五十。  The measuring apparatus according to claim 10, wherein a sum of a rising edge and a falling edge width of a waveform of the pulse light output pulse light is larger than a half of a pulse width.
12. 根据权利要求 10所述的测量装置, 其特征在于, 所述脉冲光源 输出脉沖光的波形为三角型、 高斯型或 曲正切型。  The measuring device according to claim 10, wherein the pulse light source outputs a pulse light having a triangular shape, a Gaussian shape or a curved shape.
13. 根据权利要求 10所述的测量装置, 其特征在于, 所述脉沖光 源为输出脉沖光的振幅可调的脉冲光源。 The measuring device according to claim 10, wherein the pulse light source is a pulse light source whose output pulse light has an adjustable amplitude.
14. 根据权利要求 10-1 3任一项所述的测量装置, 其特征在于,还 件, 在所述脉沖光源的一 沖周期内, 所 光检测器件可以 成对输出检测光的至少一次测量。 The measuring device according to any one of claims 10 to 13, wherein, in a cycle of the pulse light source, the light detecting device can output at least one measurement of the detected light in pairs. .
15. 根据权利要求 14所述的测量装置, 其特征在于, 所述光检测器 件为光电检测器、 光采样示波器或 CCD。  The measuring device according to claim 14, wherein the photodetecting device is a photodetector, an optical sampling oscilloscope or a CCD.
16. 权利要求 8- 15所述的波导耦合表面等离子共振传感测量装置 的传感检测方法, 包括以下步骤:  16. The method of sensing a waveguide coupled surface plasmon resonance sensing device according to claim 8-15, comprising the steps of:
a )使检测光源输出的光入射到所述传感器的基底上, 并接收到波 导耦合共振峰;  a) causing the light output from the detection light source to be incident on the substrate of the sensor and receiving a waveguide coupling resonance peak;
b )将所述传感器的被检测层与待测物质发生反应, 使所述波导耦 合共振峰发生移动;  b) reacting the detected layer of the sensor with the substance to be tested to cause the waveguide coupling resonance peak to move;
c )将控制光源输出的控制光耦合入所述传感器的介质波导层,使 所述光检测器重新接收到所述波导耦合共振峰;  c) coupling control light that controls the output of the light source into the dielectric waveguide layer of the sensor, such that the photodetector re-receives the waveguide coupling formant;
d )根据光检测器在上述步骤 a )至 c )过程中记录的波形信息, 得 到被检测层的折射率和 /或厚度变化。  d) According to the waveform information recorded by the photodetector during the above steps a) to c), the refractive index and/or thickness variation of the detected layer is obtained.
17. 根据权利要求 16所述的传感检测方法, 其特征在于, 所述步骤 ( c )还包括对所述控制光源输出的控制光强度进行调节的步骤。 17. The sensing detection method according to claim 16, wherein the step (c) further comprises the step of adjusting the intensity of the control light output by the control light source.
18. 根据权利要求 16所述的传感检测方法, 其特征在于, 所述步骤 ( d )包括, 首先, 根据光检测器记录的波形信息, 结合传感器介 质波导层所使用材料的光学非线性特性, 得到波导耦合共振峰所 对应的介质波导层折射率; 然后, 再由波导耦合共振峰及其所对 应的介质波导层折射率得到被检测层的折射率和 /或厚度变化。 18. The sensing detection method according to claim 16, wherein the step (d) comprises, firstly, combining optical characteristics of a material used in the sensor dielectric waveguide layer according to waveform information recorded by the photodetector. Obtaining a refractive index of the dielectric waveguide layer corresponding to the waveguide coupling formant; and then obtaining a refractive index and/or a thickness change of the detected layer by the waveguide coupling formant and its corresponding dielectric waveguide layer refractive index.
PCT/CN2008/000437 2008-03-05 2008-03-05 Waveguide coupled surface plasmon resonance sensor, sensor detecting device and detecting method thereof WO2009109065A1 (en)

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