WO2009092426A3 - Solar cell and method for the production of a solar cell - Google Patents
Solar cell and method for the production of a solar cell Download PDFInfo
- Publication number
- WO2009092426A3 WO2009092426A3 PCT/EP2008/010713 EP2008010713W WO2009092426A3 WO 2009092426 A3 WO2009092426 A3 WO 2009092426A3 EP 2008010713 W EP2008010713 W EP 2008010713W WO 2009092426 A3 WO2009092426 A3 WO 2009092426A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metallization
- solar cell
- base
- emitter
- region
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000001465 metallisation Methods 0.000 abstract 12
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a solar cell having a front side for coupling electromagnetic radiation, and a rear side, comprising at least one base metallization (3) and at least one emitter metallization (6), and a semi-conductor structure, which has at least one base region (1) of a first doping type, and at least one emitter region (2) of a second doping type opposite the first doping type, for forming a p-n junction between the base and the emitter, wherein the base metallization (3) is connected to the base region (1) and the emitter metallization (6) is connected to the emitter region (2) in an electrically conductive manner. The base metallization (3) and the emitter metallization (6) are both disposed on a metallization side of the solar cell, which is either the front side or the rear side of the solar cell, and the emitter region (2) extends at least partially along the metallization side of the solar cell. It is essential to the invention that the emitter region (2) extends at least partially into the region of the metallization side covered by the base metallization (3), and that the semi-conductor structure further has an insulating region (4) of the first doping type, which extends along the metallization side of the solar cell at least partially between the base metallization (3) and the emitter region (2). The invention further relates to a method for the production of a solar cell.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08871544A EP2232573A2 (en) | 2008-01-21 | 2008-12-16 | Solar cell and method for the production of a solar cell |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008005396.1 | 2008-01-21 | ||
DE102008005396A DE102008005396A1 (en) | 2008-01-21 | 2008-01-21 | Solar cell and process for producing a solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009092426A2 WO2009092426A2 (en) | 2009-07-30 |
WO2009092426A3 true WO2009092426A3 (en) | 2009-09-24 |
Family
ID=40794259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/010713 WO2009092426A2 (en) | 2008-01-21 | 2008-12-16 | Solar cell and method for the production of a solar cell |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP2232573A2 (en) |
DE (1) | DE102008005396A1 (en) |
WO (1) | WO2009092426A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2006966C2 (en) | 2011-06-17 | 2012-12-18 | Stichting Energie | Photovoltaic system and connector for a photovoltaic cell with interdigitated contacts. |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
DE102005025125A1 (en) * | 2005-05-29 | 2006-12-14 | Hahn-Meitner-Institut Berlin Gmbh | Process for producing a solar cell contacted on one side and solar cell contacted on one side |
US20070256728A1 (en) * | 2006-05-04 | 2007-11-08 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
DE102004050269A1 (en) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Process for the contact separation of electrically conductive layers on back-contacted solar cells and solar cell |
-
2008
- 2008-01-21 DE DE102008005396A patent/DE102008005396A1/en not_active Withdrawn
- 2008-12-16 EP EP08871544A patent/EP2232573A2/en not_active Withdrawn
- 2008-12-16 WO PCT/EP2008/010713 patent/WO2009092426A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
DE102005025125A1 (en) * | 2005-05-29 | 2006-12-14 | Hahn-Meitner-Institut Berlin Gmbh | Process for producing a solar cell contacted on one side and solar cell contacted on one side |
US20070256728A1 (en) * | 2006-05-04 | 2007-11-08 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
Also Published As
Publication number | Publication date |
---|---|
EP2232573A2 (en) | 2010-09-29 |
DE102008005396A1 (en) | 2009-07-30 |
WO2009092426A2 (en) | 2009-07-30 |
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