WO2009088267A3 - 광학패키지 웨이퍼스케일 어레이 및 그 제작방법 - Google Patents

광학패키지 웨이퍼스케일 어레이 및 그 제작방법 Download PDF

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Publication number
WO2009088267A3
WO2009088267A3 PCT/KR2009/000153 KR2009000153W WO2009088267A3 WO 2009088267 A3 WO2009088267 A3 WO 2009088267A3 KR 2009000153 W KR2009000153 W KR 2009000153W WO 2009088267 A3 WO2009088267 A3 WO 2009088267A3
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WO
WIPO (PCT)
Prior art keywords
wafer scale
scale array
lens
array
fabricating
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PCT/KR2009/000153
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English (en)
French (fr)
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WO2009088267A2 (ko
Inventor
강신일
임지석
최민석
김호관
Original Assignee
연세대학교 산학협력단
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Application filed by 연세대학교 산학협력단 filed Critical 연세대학교 산학협력단
Priority to US12/812,357 priority Critical patent/US8294229B2/en
Publication of WO2009088267A2 publication Critical patent/WO2009088267A2/ko
Publication of WO2009088267A3 publication Critical patent/WO2009088267A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Lens Barrels (AREA)
  • Led Devices (AREA)

Abstract

본 발명은, 렌즈 재료와는 이종 재료로 구성되는 제1 경통구조물 웨이퍼스케일 어레이 상에 렌즈 웨이퍼스케일 어레이가 직접 형성되어, 상기 제1 경통구조물 웨이퍼스케일 어레이와 상기 렌즈 웨이퍼스케일 어레이가 일체화된 적어도 하나의 렌즈구조물 웨이퍼스케일 어레이와, 상기 렌즈구조물 웨이퍼스케일 어레이와 적층 결합되는 적어도 하나의 제2 경통구조물 웨이퍼스케일 어레이를 포함하여 이루어지는 것을 특징으로 하는 광학패키지 웨이퍼스케일 어레이를 제공한다. 바람직하게는, 상기 제1 경통구조물 웨이퍼스케일 어레이는, 액상 렌즈 재료의 유동에 대한 유동 저항이 위치에 따라 상이한 표면 상태를 갖는다. 또한, 본 발명은, 렌즈 재료와는 이종 재료로 구성되는 제1 경통구조물 웨이퍼스케일 어레이 상에 렌즈 웨이퍼스케일 어레이를 형성함으로써, 상기 제1 경통구조물 웨이퍼스케일 어레이와 상기 렌즈 웨이퍼스케일 어레이가 일체화된 렌즈구조물 웨이퍼스케일 어레이를 만드는 제1 단계와, 적어도 하나의 상기 렌즈구조물 웨이퍼스케일 어레이와 적어도 하나의 제2 경통구조물 웨이퍼스케일 어레이를 적층 결합하는 제2 단계를 포함하여 이루어지는 것을 특징으로 하는 광학패키지 웨이퍼스케일 어레이 제작방법을 제공한다.
PCT/KR2009/000153 2008-01-10 2009-01-12 광학패키지 웨이퍼스케일 어레이 및 그 제작방법 WO2009088267A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/812,357 US8294229B2 (en) 2008-01-10 2009-01-12 Wafer-scale array of optical packages and method for fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080003159A KR100969987B1 (ko) 2008-01-10 2008-01-10 광학패키지 웨이퍼스케일 어레이 및 그 제조방법
KR10-2008-0003159 2008-01-10

Publications (2)

Publication Number Publication Date
WO2009088267A2 WO2009088267A2 (ko) 2009-07-16
WO2009088267A3 true WO2009088267A3 (ko) 2009-11-05

Family

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PCT/KR2009/000153 WO2009088267A2 (ko) 2008-01-10 2009-01-12 광학패키지 웨이퍼스케일 어레이 및 그 제작방법

Country Status (3)

Country Link
US (1) US8294229B2 (ko)
KR (1) KR100969987B1 (ko)
WO (1) WO2009088267A2 (ko)

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JP5443589B2 (ja) * 2010-02-25 2014-03-19 アルプス電気株式会社 レンズユニットおよびその製造方法
JP5533339B2 (ja) * 2010-06-28 2014-06-25 ソニー株式会社 光電変換装置とそのパッケージ構造、並びに光電変換装置の製造方法
TW201310102A (zh) * 2011-08-17 2013-03-01 Pixart Imaging Inc 鏡頭模組及其製造方法
KR102107575B1 (ko) 2012-05-17 2020-05-08 헵타곤 마이크로 옵틱스 피티이. 리미티드 웨이퍼 스택 조립
CN106886082B (zh) * 2013-08-20 2020-10-02 株式会社大赛璐 晶片透镜、晶片透镜阵列、晶片透镜叠层体及晶片透镜阵列叠层体
US10425562B2 (en) 2015-06-23 2019-09-24 Intel Corporation Three-dimensional image sensing module with a low z-height
JP6670565B2 (ja) * 2015-07-31 2020-03-25 ソニーセミコンダクタソリューションズ株式会社 積層レンズ構造体の製造方法及び型
TWI741988B (zh) 2015-07-31 2021-10-11 日商新力股份有限公司 堆疊式透鏡結構及其製造方法，以及電子裝置
JP6967830B2 (ja) * 2015-07-31 2021-11-17 ソニーセミコンダクタソリューションズ株式会社 半導体装置、レンズモジュール及びその製造方法、並びに、電子機器
JP2017032797A (ja) * 2015-07-31 2017-02-09 ソニーセミコンダクタソリューションズ株式会社 積層レンズ構造体およびその製造方法、並びに電子機器
TWI781085B (zh) * 2015-11-24 2022-10-21 日商索尼半導體解決方案公司 複眼透鏡模組及複眼相機模組
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
JP2018109716A (ja) * 2017-01-05 2018-07-12 ソニーセミコンダクタソリューションズ株式会社 レンズモジュールおよびレンズモジュールの製造方法、撮像装置、並びに電子機器
WO2018139253A1 (en) * 2017-01-26 2018-08-02 Sony Semiconductor Solutions Corporation Laminated lens structure and method of manufacturing the same, and electronic apparatus
JP6987518B2 (ja) * 2017-01-26 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 積層レンズ構造体およびその製造方法、並びに電子機器
JP6878018B2 (ja) * 2017-01-26 2021-05-26 ソニーセミコンダクタソリューションズ株式会社 Ａｆモジュール、カメラモジュール、および、電子機器
CN110431460B (zh) * 2017-03-23 2022-08-16 索尼半导体解决方案公司 层叠透镜结构、层叠透镜结构的制造方法和电子设备
JP6957271B2 (ja) * 2017-08-31 2021-11-02 ソニーセミコンダクタソリューションズ株式会社 積層レンズ構造体、固体撮像素子、および、電子機器

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Publication number Publication date
KR100969987B1 (ko) 2010-07-15
WO2009088267A2 (ko) 2009-07-16
US8294229B2 (en) 2012-10-23
US20100283113A1 (en) 2010-11-11
KR20090077305A (ko) 2009-07-15

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