WO2009084536A1 - Semiconductor substrate bonding apparatus and semiconductor substrate bonding method - Google Patents

Semiconductor substrate bonding apparatus and semiconductor substrate bonding method Download PDF

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Publication number
WO2009084536A1
WO2009084536A1 PCT/JP2008/073437 JP2008073437W WO2009084536A1 WO 2009084536 A1 WO2009084536 A1 WO 2009084536A1 JP 2008073437 W JP2008073437 W JP 2008073437W WO 2009084536 A1 WO2009084536 A1 WO 2009084536A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
holding table
substrate
semiconductor
substrate holding
Prior art date
Application number
PCT/JP2008/073437
Other languages
French (fr)
Japanese (ja)
Inventor
Masahiro Yoshihashi
Hidehiro Maeda
Takashi Shibukawa
Kazutoshi Sakaki
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Nikon Corporation
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Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009548043A priority Critical patent/JP5365525B2/en
Publication of WO2009084536A1 publication Critical patent/WO2009084536A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Definitions

  • the present invention relates to a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method for bonding one semiconductor substrate to another semiconductor substrate.
  • the present invention relates to a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method in which the inclination of a substrate holding table that holds at least one semiconductor substrate is adjusted.
  • a semiconductor substrate bonding apparatus is used for bonding substrates such as semiconductor substrates.
  • This semiconductor substrate bonding apparatus includes two substrate holding tables, and the inclination of at least one of the substrate holding tables is adjusted by a stage device.
  • the stage device is generally mounted on an XY stage for positioning in the XY direction in a horizontal plane, and after the semiconductor substrate is positioned in the XY direction by the XY stage, the rotation ( ⁇ ) direction and the vertical (Z) direction Positioning and adjusting the inclination.
  • Patent Document 1 As a technique for obtaining such parallelism between semiconductor substrates, for example, there is one disclosed in Patent Document 1 (Note that the technique disclosed in Patent Document 1 is not related to bonding between semiconductor substrates. , Relating to bonding of semiconductor chip and TAB tape).
  • a chip is mounted by measuring the tilt of the lower surface of the bonding tool through a measuring member 33 using a laser displacement meter, a dial gauge, or the like, and adjusting the tilt of the tilt table (plate 16) based on the measured value.
  • the stage 20 is made to follow the parallelism of the lower surface of the bonding tool. JP-A-9-64094
  • the present invention has been made in view of the above circumstances, and a semiconductor substrate bonding apparatus and a semiconductor capable of bonding both semiconductor substrates by increasing the parallelism of another semiconductor substrate with respect to one semiconductor substrate. It aims at providing the board
  • a semiconductor substrate bonding apparatus is a semiconductor substrate bonding apparatus for bonding a first semiconductor substrate and a second semiconductor substrate to each other, and a driving unit for tilting the second semiconductor substrate, and a driving unit And a controller that controls at least one of the first and second semiconductor substrates when the first and second semiconductor substrates partially contact each other.
  • the load is calculated, and in accordance with the load, operation control of the drive unit is performed so that non-contact parts other than a part of the first and second semiconductor substrates are close to each other, and the first and second semiconductor substrates are mutually connected.
  • the operation control is repeatedly executed until they become parallel.
  • the control unit calculates a load acting on at least one of the semiconductor substrates, and according to the load, The operation of the drive unit is controlled so that non-contact parts other than a part of the first and second semiconductor substrates are close to each other, and the operation control is repeatedly executed until the first and second semiconductor substrates are parallel to each other. I have to. For this reason, the minute inclination of the other semiconductor substrate with respect to one semiconductor substrate is gradually reduced, the two semiconductor substrates become substantially parallel, and the two semiconductor substrates can be bonded together after increasing the parallelism of the two semiconductor substrates. It becomes possible.
  • the part where the first and second semiconductor substrates are in contact with each other is a part of the periphery of at least one of the first and second semiconductor substrates. It is preferable.
  • a semiconductor substrate bonding apparatus includes a first substrate holding table for holding a first semiconductor substrate, and a first substrate for holding a second semiconductor substrate so as to face the first semiconductor substrate.
  • the first substrate holding unit for tilting the second substrate holding table about one of two axes intersecting each other in plan view of the second substrate holding table.
  • a driving mechanism and a second driving mechanism for tilting the second substrate holding table around the other axis different from the one axis, and the control unit is held by the first substrate holding table One of the forces acting on the second substrate holding table from the second semiconductor substrate when the first semiconductor substrate contacts a part of the periphery of the second semiconductor substrate held on the second substrate holding table.
  • Force component around the axis and the other axis Of the force component is calculated as a load acting on the second semiconductor substrate, it is preferable to repeatedly perform the operation control for driving the first driving mechanism and the second driving mechanism based on the respective force component.
  • the minute inclination of the second semiconductor substrate with respect to the first semiconductor substrate is used as a force component around one and the other axes of the force acting on the second substrate holding table from the second semiconductor substrate.
  • the first and second drive mechanisms are driven to adjust the inclination of the second substrate holding table, thereby increasing the parallelism of both semiconductor substrates and increasing both of them.
  • the semiconductor substrates can be bonded together.
  • the two axes cross each other at angles other than 0 degrees and 180 degrees centering on the origin through the origin that is the holding center in the plan view of the second substrate holding table. It is preferable.
  • the first and second drive mechanisms for tilting the second substrate holding table about each axis can operate independently, and the second substrate holding table (that is, the second substrate holding table)
  • the semiconductor substrate can be inclined at various inclination angles with respect to the horizontal plane.
  • such a three-dimensional tilt angle adjustment of the second semiconductor substrate can be realized with a simple structure.
  • the two axes pass through the origin, which is the holding center in the plan view of the second substrate holding table, and are orthogonal to each other about the origin.
  • the center of gravity position of the force acting on the second semiconductor substrate from the first semiconductor substrate is calculated, and when the center of gravity position is not on the origin, the center of gravity position is used to calculate the first drive mechanism and It is preferable to calculate the driving amount of the second driving mechanism. In this way, since the driving amount can be calculated based on the position of the center of gravity calculated from each force component that does not require complicated measurement, the second substrate holding table by the first driving mechanism and the second driving mechanism. Can be easily controlled.
  • the holding center means a point on the second substrate holding table and corresponding to the center of gravity of the second semiconductor substrate.
  • the first driving mechanism tilts the second substrate holding table on the other axis
  • the second driving mechanism is the second substrate holding table on the one axis. Is tilted.
  • the controller preferably calculates each reaction force generated in the first drive mechanism and the second drive mechanism as each force component when the first semiconductor substrate and the second semiconductor substrate contact each other. . In this way, each reaction force generated in the mechanisms is applied to the first and second drive mechanisms necessary for tilting the second substrate holding table so that the two semiconductor substrates are parallel to each other. Since it can calculate as a component, it can be set as the semiconductor substrate bonding apparatus of a simple structure.
  • the first drive mechanism and the second drive mechanism are drive mechanisms using fluid pressure
  • the control unit calculates each reaction force based on the change in the fluid pressure. Is preferred. In this way, each reaction force can be calculated based on a change in fluid pressure at which a minute change can be easily detected, and calculation accuracy is improved.
  • the inclination of the second substrate holding table can be adjusted based on the reaction force with high calculation accuracy in this way, minute inclination adjustment can be performed.
  • the semiconductor substrate bonding apparatus preferably further includes a moving mechanism for moving the first substrate holding table and the second substrate holding table in a relatively approaching direction and a separating direction.
  • the control unit calculates a force component generated in the moving mechanism when the first semiconductor substrate and the second semiconductor substrate are in contact with each other, and the force component and each force acting on the second substrate holding table. It is preferable to calculate the position of the center of gravity based on the component and the position at which the second substrate holding table is tilted by the first drive mechanism and the second drive mechanism. In this case, the position of the center of gravity based on the force component generated in the moving mechanism, the force components acting on the second substrate holding table, and the position at which the second substrate holding table is tilted by the first and second drive mechanisms. Can be calculated to calculate the drive amounts of the first and second drive mechanisms, so that the calculation accuracy can be improved and the position of the center of gravity can be easily calculated.
  • the control unit calculates a reaction force generated in the moving mechanism as a force component when the first semiconductor substrate and the second semiconductor substrate are in contact with each other. .
  • the reaction force generated in this mechanism can be calculated as a force component using a moving mechanism that is necessary to move both semiconductor substrates in a relatively approaching direction and a separating direction.
  • a semiconductor substrate bonding apparatus having a simple structure can be obtained.
  • the moving mechanism is a driving mechanism using fluid pressure
  • the control unit calculates a reaction force generated in the moving mechanism based on a change in fluid pressure.
  • the reaction force can be calculated based on the change in the fluid pressure at which a minute change is easily detected, and the calculation accuracy is improved.
  • the inclination of the second substrate holding table can be adjusted based on the reaction force with high calculation accuracy in this way, minute inclination adjustment can be performed.
  • the control unit when the load acting on the second semiconductor substrate from the first semiconductor substrate exceeds the upper limit value, the control unit includes the first substrate holding table and the second substrate holding table. It is preferable to drive the movement mechanism so that the movement mechanism moves away from each other. This makes it possible to prevent a load from damaging the semiconductor substrates from being applied to both the semiconductor substrates when the two semiconductor substrates are copied and controlled. As a result, damage to the semiconductor substrate can be prevented and yield can be improved.
  • the control unit is a first substrate when the position of the center of gravity is on the origin and the load on the second semiconductor substrate does not exceed the lower limit value. It is preferable to drive the moving mechanism so that the holding table and the second substrate holding table move in a relatively approaching direction. In this way, when the two semiconductor substrates are copied and controlled, a load necessary for bonding the semiconductor substrates can be appropriately applied to both the semiconductor substrates. As a result, bonding failure due to insufficient load can be avoided, and yield can be improved.
  • the semiconductor substrate bonding method according to the present invention is a semiconductor substrate bonding method for bonding the first and second semiconductor substrates to each other, and the first and second semiconductor substrates are partially in contact with each other.
  • a calculation step of calculating a load acting on at least one of the first and second semiconductor substrates, and a portion other than a part of the first and second semiconductor substrates according to the load calculated in the calculation step A tilting step of tilting the second semiconductor substrate so that the non-contact portions of each other are close to each other, and a repeating step of repeatedly executing the calculation step and the tilting step until the first and second semiconductor substrates are parallel to each other It is characterized by including.
  • a load acting on at least one semiconductor substrate is calculated in the calculation step, and in the tilting step, non-contact other than a part of the first and second semiconductor substrates according to the load.
  • the second semiconductor substrate is tilted so that the portions are close to each other, and in the repeating process, the calculation process and the tilting process are repeated until the first and second semiconductor substrates are parallel to each other. For this reason, the minute inclination of the other semiconductor substrate with respect to one semiconductor substrate is gradually reduced, the two semiconductor substrates become substantially parallel, and the two semiconductor substrates can be bonded together after increasing the parallelism of the two semiconductor substrates. It becomes possible.
  • the second semiconductor substrate is tilted so that a non-contact portion other than a part of the peripheral edge of the second semiconductor substrate is close to the non-contact portion of the first semiconductor substrate.
  • the minute inclination of the second semiconductor substrate with respect to the first semiconductor substrate is used as a force component around one and the other axes of the force acting on the second substrate holding table from the second semiconductor substrate. It becomes possible to calculate, and by adjusting based on each of these force components, it becomes possible to increase the parallelism of both semiconductor substrates and bond the two semiconductor substrates together.
  • the present invention it is possible to provide a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method capable of bonding both semiconductor substrates by increasing the parallelism of another semiconductor substrate with respect to one semiconductor substrate.
  • FIG. 5 is a sectional view taken along line VV in FIG. 3.
  • FIG. 6 is a partially enlarged view of the first drive mechanism of FIG. 5. It is a figure which shows the arrangement
  • SYMBOLS 1 Semiconductor substrate bonding apparatus, 24 ... 1st board
  • FIG. 1 is a schematic view schematically showing a configuration of a semiconductor substrate bonding apparatus according to the present embodiment.
  • the semiconductor substrate bonding apparatus 1 includes a vibration isolator 12, a surface plate 14, a body 16, an upper stage 20, a lower stage 30, and a control device (control unit) 90.
  • the vibration isolator 12 removes vibration transmitted to the semiconductor substrate bonding apparatus 1.
  • a surface plate 14 is provided on the vibration isolator 12.
  • the body 16 has a side wall portion and an upper wall portion, and forms a sealed space on the surface plate 14.
  • the upper stage 20 is mounted on the inner surface of the upper wall portion of the body 16.
  • the upper stage 20 has an XY ⁇ stage 22 and a first substrate holding table 24.
  • the first substrate holding table 24 holds the first semiconductor substrate Wu to be bonded by electrostatic chucking or vacuum chucking.
  • the XY ⁇ stage 22 performs positioning in the XY ⁇ direction of the first semiconductor substrate Wu held by the first substrate holding table 24 in a horizontal plane.
  • the lower stage 30 is mounted on the surface plate 14.
  • the lower stage 30 has an XY stage 32 and a stage device 34.
  • the stage device 34 includes a second substrate holding table 36, a tilt table 38, a support table 45, a first driving mechanism (driving unit) 46, a second driving mechanism (driving unit) 48, a ⁇ driving mechanism 50, and a moving mechanism 52. It has.
  • the tilt table 38 is driven by the first and second drive mechanisms 46, 48, and the support table 45 is driven by the ⁇ drive mechanism 50, whereby the placement surface 38a (ie, on the placement surface 38a).
  • the inclination angle adjustment and the rotation angle adjustment of the second semiconductor substrate Wd) held by the second substrate holding table 36 mounted on the substrate are performed.
  • the height position is also adjusted by the moving mechanism 52 that is an air cylinder.
  • the X axis and the Y axis are set so as to be 90 degrees in the horizontal plane
  • the Z axis is set in the vertical direction
  • a three-dimensional orthogonal coordinate system is set. The case will be described using the XYZ coordinate system.
  • the second substrate holding table 36 holds the second semiconductor substrate Wd to be bonded.
  • the second substrate holding table 36 includes an electrostatic chuck ESC that sucks a wafer by electrostatic force and a vacuum chuck VAC that vacuum-sucks the electrostatic chuck ESC.
  • the tilt table 38 is a disk-shaped table, and has a flat mounting surface 38 a on the upper surface side for mounting the second substrate holding table 36.
  • a convex spherical bearing surface 38b is provided on the lower surface side.
  • the central axis L in the vertical direction of the bearing surface 38 b coincides with the central axis of the tilt table 38.
  • an operation portion 60 having an L-shaped cross section is provided at a position in the X-axis direction when viewed from the central axis L.
  • the operating unit 60 includes a first operating piece 60 c that protrudes in the X-axis direction at a position lower than the support table 45, and an end on the central axis L side of the first operating piece 60 c.
  • a connecting portion 60d extending in the vertical direction for connecting the portion and the side surface 38c.
  • the side surface 38c is provided with an operation section 62 having an L-shaped cross section at a position in the Y-axis direction when viewed from the central axis L. As shown in FIG.
  • the operating portion 62 includes a second operating piece 62 c that protrudes in the Y-axis direction at a position lower than the support table 45, and an end portion and a side surface on the central axis L side of the second operating piece 62 c. And a connecting portion 62d extending in the vertical direction for connecting 38c.
  • the first and second operating pieces 60c and 62c are rectangular plates that extend on the XY plane.
  • the rectangular support table 45 is formed at the upper end of a rod 53 provided in a moving mechanism 52 that is an air cylinder. As shown in FIG. 5, a bearing surface 45 b having a concave spherical surface is formed at a substantially central portion of the upper surface of the support table 45 to support the bearing surface 38 b of the tilt table 38.
  • the support table 45 is embedded with a porous portion 45c so as to form a bearing surface 45b, and a large number of minute holes are formed in the bearing surface 45b.
  • a pipe P45 is led out from the porous portion 45c and connected to an external air pressure source (not shown).
  • the air pressure source supplies compressed air to the porous portion 45c, and the compressed air is blown against the bearing surface 38b from a large number of holes in the bearing surface 45b.
  • an air film is formed between the bearing surface 38b and the bearing surface 45b, and the bearing surface 38b is supported in a non-contact state without receiving resistance from the bearing surface 45b.
  • an operating portion 64 having an L-shaped cross section is provided on the side surface 45d of the support table at a position opposite to the Y axis when viewed from the central axis L.
  • the operating part 64 has a connecting part 64d that protrudes in the negative direction of the Y-axis, and a third operating piece 64c that protrudes downward from the free end of the connecting part 64d.
  • the third operating piece 64c is a rectangular plate extending on the YZ plane.
  • the first drive mechanism 46 includes a support member 66 having a support piece 66 a disposed above the first operating piece 60 c and a support piece 66 b disposed below, and a support member 66. It consists of a bellows actuator 68 extending between the piece 66a and the first operating piece 60c, and a bellows actuator 70 extending between the support piece 66b and the first operating piece 60c. The first operating piece 60 c is sandwiched between the tip of the bellows actuator 68 and the tip of the bellows actuator 70. Further, the support member 66 has a rectangular plate-like connection portion 66c for connecting the support pieces 66a and 66b, and the side surface of the connection portion 66c on the support table 45 side is fixed to the support table 45.
  • the bellows actuator 68 includes a bellows 68 a that can be expanded and contracted in the vertical direction, and a disk-shaped operation plate 68 b that seals the opening on the lower end side of the bellows 68 a.
  • the opening on the upper end side of the bellows 68a is sealed by being fixed to the support piece 66a.
  • the internal space 68c of the bellows actuator 68 is sealed by the bellows 68a, the support piece 66a, and the operation plate 68b, and the airtightness thereof is maintained.
  • a shaft 68d extending upward is formed at the central portion of the operating plate 68b.
  • the shaft 68d is movable in the vertical direction by being inserted into a guide hole of a boss 66d provided in the support piece 66a.
  • a hemispherical pressing portion 68e that protrudes toward the first operating piece 60c is formed at the center of the operating plate 68b, and the pressing portion 68e contacts the upper surface 60a of the first operating piece 60c. By contacting, the force generated when the bellows actuator 68 is driven in the vertical direction can be transmitted to the first operating piece 60c. Since the pressing portion 68e of the bellows actuator 68 is spherical, the pressing portion 68e makes point contact with the first operating piece 60c of the operating portion 60.
  • a pipe P68 is led out from the internal space 68c of the bellows actuator 68 and is connected to a servo valve 68f provided outside. Then, by controlling the servo valve 68f, the air in the internal space 68c can be supplied and discharged, and the amount of movement of the operating plate 68b in the vertical direction can be arbitrarily controlled in accordance with the change in the atmospheric pressure in the internal space 68c. can do.
  • the bellows actuator 68 is provided with a pressure gauge 68g that continuously measures the atmospheric pressure in the internal space 68c.
  • the measured atmospheric pressure information is sent to the control device 90. Accordingly, a change in atmospheric pressure in the internal space 68c when the first operating piece 60c is raised by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd described later are bonded to each other. It can be calculated by the control device 90.
  • the pressure gauge 68g functions as a detection unit that detects an external force that is a source of a load, and the control device 90 can calculate a reaction force generated in the bellows actuator 68 based on the change in atmospheric pressure.
  • Various pressure gauges described later also function as a detection unit.
  • the bellows actuator 70 has the same configuration as the bellows actuator 68 described above, and the amount of movement of the operation plate 70b in the vertical direction can be arbitrarily controlled by controlling the servo valve 70f.
  • the pressing portion 70e has a hemispherical shape like the pressing portion 68e, and makes point contact with the lower surface 60b of the operating portion 60. When the pressing portion 70e comes into contact with the lower surface 60b of the first operating piece 60c, the force generated when the bellows actuator 70 is driven in the vertical direction can be transmitted to the first operating piece 60c.
  • the bellows actuator 70 includes a bellows 70a, an internal space 70c, and a shaft 70d, and the internal space 70c and the servo valve 70f are connected by a pipe P70.
  • the bellows actuator 70 is provided with a pressure gauge 70g that continuously measures the atmospheric pressure in the internal space 70c.
  • the measured atmospheric pressure information is sent to the control device 90. Accordingly, a change in atmospheric pressure in the internal space 70c when the first operating piece 60c is lowered by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd, which will be described later, are bonded together. It can be calculated by the control device 90. Further, based on this change in atmospheric pressure, the reaction force generated in the bellows actuator 70 can be calculated by the control device 90.
  • the second drive mechanism 48 has a U-shaped support member 72 having a support piece 72 a disposed above the second operating piece 62 c and a support piece 72 b disposed below.
  • the bellows actuator 74 extends between the support piece 72a and the second operation piece 62c, and the bellows actuator 76 extends between the support piece 72b and the second operation piece 62c.
  • the second operating piece 62 c is sandwiched between the tip of the bellows actuator 74 and the tip of the bellows actuator 76.
  • the support member 72 has a rectangular plate-like connecting portion 72c that connects the support piece 72a and the support piece 72b, and the side surface of the connecting portion 72c on the support table 45 side is fixed to the support table 45.
  • the bellows actuators 74 and 76 have the same configuration as the bellows actuators 68 and 70, and are each provided with a pressure gauge that measures the atmospheric pressure in the internal space of the bellows actuators 74 and 76. The atmospheric pressure information is sent from these pressure gauges to the control device 90, and the atmospheric pressure change and reaction force generated in the bellows actuators 74 and 76 can be calculated.
  • the ⁇ drive mechanism 50 has a U-shaped support having a support piece 56 a and a support piece 56 b that are spaced apart in the X-axis direction so as to sandwich the third operating piece 64 c therebetween.
  • the member 56 includes a bellows actuator 78 extending between the support piece 56a and the third operating piece 64c, and a bellows actuator 80 extending between the support piece 56b and the third operating piece 64c.
  • the third operating piece 64 c is sandwiched between the tip of the bellows actuator 78 and the tip of the bellows actuator 80.
  • the support member 56 has a rectangular plate-like connection portion 56 c that connects the support piece 56 a and the support piece 56 b, and the connection portion 56 c is fixed to the upper surface 82 a of the base plate 82.
  • the bellows actuators 78 and 80 have the same configuration as the bellows actuators 68 and 70.
  • the rod 53 of the moving mechanism 52 which is an air cylinder, has a disc-shaped piston 53a having a diameter substantially the same as the inner periphery of the cylindrical body 52a at the lower end.
  • pipes P84 and P86 are led out from the internal space 52b above the piston 53a and the internal space 52c below.
  • the pipe P86 is provided with a pressure gauge 52d that continuously measures the atmospheric pressure in the lower internal space 52c.
  • the measured atmospheric pressure information is sent to the control device 90. Therefore, the control device 90 controls the change in atmospheric pressure in the internal space 52c when the support table 45 is lowered by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd described later are bonded to each other. It can be calculated by. Further, based on this change in atmospheric pressure, the control device 90 can calculate the reaction force generated in the moving mechanism 52.
  • the first drive mechanism 46 and the second drive mechanism 48 are arranged at an angle of approximately 90 degrees.
  • the first drive mechanism 46 is disposed on the X axis and performs tilt adjustment around the Y axis
  • the second drive mechanism 48 is disposed on the Y axis and performs tilt adjustment around the X axis.
  • the two axes, the X axis and the Y axis pass through the origin O, which is the holding center in the plan view of the tilt table 38 (the second substrate holding table 36 placed on the tilt table 38), and are centered on the origin O.
  • the center of the moving mechanism 52 coincides with the central axis L, and is at the same position as the origin O in the XY coordinate system of the tilt table 38.
  • the two axes on which the first and second drive mechanisms 46 and 48 are disposed need only intersect with each other at angles other than 0 degrees and 180 degrees with the origin O as the center, and not at an angle of about 90 degrees. May be.
  • the configuration below the base plate 82 is not shown, but the stage device 34 having such a configuration is mounted on the XY stage 32 via the base plate 82.
  • the control device 90 controls the semiconductor substrate bonding apparatus 1 including the control of the stage device 34 and the upper stage 20. Details of the control of the stage device 34 by the control device 90 will be described later.
  • the first semiconductor substrate Wu to be bonded is held by the first substrate holding table 24 of the upper stage 20, and the first semiconductor substrate Wu is positioned in the XY ⁇ direction by the XY ⁇ stage 22.
  • the second semiconductor substrate Wd to be bonded is held by the second substrate holding table 36 of the lower stage 30, and the second semiconductor substrate Wd is positioned in the XY direction by the XY stage 32.
  • the support table 45 is driven by the ⁇ drive mechanism 50 to position the rotational position of the second semiconductor substrate Wd around the central axis L (Z axis).
  • the support table 45 is raised by a predetermined amount by the moving mechanism 52,
  • the substrate holding table 36 is moved in a direction approaching the first substrate holding table 24 (step S1).
  • This rise is performed by pressurizing the air pressure in the internal space 52c of the moving mechanism 52 from the first air pressure to the second air pressure via the pipe P86 and maintaining the second air pressure that is a constant pressure.
  • the atmospheric pressure in the internal space 52c is higher than the second atmospheric pressure. It becomes the 3rd atmospheric pressure which is a pressure.
  • Each atmospheric pressure is measured by the pressure gauge 52d, and the atmospheric pressure information is sent to the control device 90 as an external force acting on the semiconductor substrates Wu and Wd.
  • the first semiconductor substrate Wu is in contact with a part of the periphery of the second semiconductor substrate Wd, and the parts other than the part in which both the semiconductor substrates Wu and Wd are in contact are both semiconductor substrates. It becomes a non-contact part in Wu and Wd.
  • the control device 90 calculates the atmospheric pressure change (differential pressure) ⁇ Pz in the internal space 52c of the moving mechanism 52 as the support table 45 is raised, and determines whether or not this differential pressure is greater than zero (step S2). ). Result of the determination, if the middle of the rise, since pressure change [Delta] P Z is the difference between the second pressure becomes zero, the process returns to step S1, and continues to rise in the support table 45 by the moving mechanism 52. On the other hand, if both the semiconductor substrate is in contact, it becomes larger than zero since the pressure change [Delta] P Z is the difference between the third pressure and a second pressure, and proceeds to step S3.
  • the controller 90 calculates the load F when the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact with each other.
  • the load F is represented by the following formula (1).
  • [Delta] F z is the reaction force in the moving mechanism 52, a value obtained by integrating the surface area SA of the piston 53a in the pressure change [Delta] P Z in the internal space 52c.
  • ⁇ F B is a reaction force on the bearing surface 45b, and is, for example, a value obtained by adding the surface area SB of the bearing surface 45b to the atmospheric pressure change ⁇ P B between the bearing surface 38b and the bearing surface 45b.
  • [Delta] F AX is a reaction force in the first driving mechanism 46, for example, the atmospheric pressure change [Delta] P X in the interior space 68c or in 70c, which is a value obtained by integrating the surface area SC of the actuating plate 68b or 70b of the bellows.
  • ⁇ F AY is a reaction force in the second drive mechanism 48.
  • ⁇ F z it is preferable to use ⁇ F z in consideration of calculation accuracy and ease of calculation. However, if necessary, the total value of ⁇ F B , ⁇ F Ax and ⁇ F Ay is used. If ⁇ F B is small enough to be ignored, the total value of ⁇ F Ax and ⁇ F Ay may be used.
  • step S3 it is determined whether or not the load F is smaller than an upper limit value A determined in consideration of a value that may damage the first semiconductor substrate Wu or the second semiconductor substrate Wd (step S3).
  • the process proceeds to step S4, where the support table 45 is placed by the moving mechanism 52.
  • the second substrate holding table 36 is moved in a direction away from the first substrate holding table 24 after being fixed and lowered.
  • the process proceeds to the next step S5.
  • the upper limit value A for example, 1 [N] is preferably set.
  • step S ⁇ b> 5 the contact position T (X F , Y F ) where the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact is determined by the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. Based on the positional relationship, the reaction force in each drive mechanism, and the load on the semiconductor substrate, the following calculation is performed.
  • the contact position T an XY coordinate system with the center as the origin O in the plan view of the tilt table 38 is set.
  • the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact at one point T (X F , Y F ) in the XY plane, and a load F is applied to the contact portion.
  • a load F is applied to this contact position.
  • this contact position corresponds to the center of gravity position.
  • the center of gravity position is calculated from the plurality of contact positions, this center of gravity position is set as a virtual contact position, and this virtual contact position is set as the contact position T (X F , Y F ))
  • T X F , Y F
  • step S6 it is determined whether or not the contact position T (X F , Y F ) calculated above is on the origin O (step S6).
  • the contact position T (X F , Y F ) is not on the origin O, the first semiconductor substrate Wu and the second semiconductor substrate Wd are not parallel (that is, a non-contact portion between the two semiconductor substrates Wu, Wd). Therefore, in order to make both semiconductor substrates parallel, the process proceeds to steps S7 and S8.
  • step S7 the drive amount ( ⁇ AX ) of the rotation angle ⁇ X around the X axis for adjusting the second semiconductor substrate Wd in parallel with the first semiconductor substrate Wu and the rotation angle ⁇ Y around the Y axis
  • a driving amount ( ⁇ AY ) is calculated.
  • each driving amount first, as shown in FIGS. 10A and 10B, the inclination of the first semiconductor substrate Wu and the second semiconductor substrate Wd around the X axis is expressed by ⁇ X and around the Y axis. Assume the slope is ⁇ Y. Assuming that both slopes are very small, both slopes are expressed by the following equations.
  • Z max is the largest value among the values assumed as the amount of deviation in the Z-axis direction in the inclination of the semiconductor substrate that is usually generated when the semiconductor substrates are bonded together.
  • the rotational drive amount ⁇ AX is driven by the second drive mechanism 48 to adjust the tilt around the X axis
  • the rotational drive amount ⁇ AY is driven by the first drive mechanism 46 to tilt around the Y axis. Is adjusted (step S8).
  • the second semiconductor substrate is tilted, and a non-contact portion of the second semiconductor substrate other than a part of the peripheral edge in contact with the first semiconductor substrate approaches the non-contact portion of the first semiconductor substrate. It becomes like this.
  • the second drive mechanism 48 is driven, that is, when the tilt table 38 tilts around the X axis, the first operating piece 60c of the operating unit 60 rotates around the X axis.
  • the pressing portions 68e and 70e of the bellows actuators 68 and 70 of the first drive mechanism 46 are in point contact with the upper surface 60a and the lower surface 60b of the operating piece 60c, respectively, as described above.
  • the contact points of the pressing portions 68e and 70e and the operating piece 60c and the first contact points are compared with the case where the pressing portions 68e and 70e are in surface contact with the first operating piece 60c, respectively.
  • the distance from the rotation center of the operating piece 60c becomes smaller.
  • each press part 68e and 70e When the 1st action piece 60c rotates, compared with the case where each press part 68e and 70e surface-contacts with the 1st action piece 60c, respectively, each press part 68e, The magnitude of the moment force acting on 70e is reduced. Accordingly, each of the pressing portions 68e and 70e can be reliably suppressed from moving in the direction in which the interval between the pressing portions is increased by the moment force. Therefore, the first driving mechanism 48 is driven when the second driving mechanism 48 is driven. The influence on the drive mechanism 46 can be reliably suppressed.
  • the second drive is performed when the first drive mechanism 46 is driven.
  • the influence on the mechanism 48 can also be reliably suppressed.
  • step S7 Step S8 for driving the drive mechanism based on the calculated drive amount
  • the second semiconductor substrate Wd is gradually parallel to the first semiconductor substrate Wu based on the reaction forces generated in the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. It is trying to become. That is, based on each reaction force, a contact position corresponding to the position of the center of gravity is calculated, and based on this contact position, it is calculated whether or not both semiconductor substrates are parallel, so that the contact position approaches the origin.
  • step S6 If it is determined in step S6 that the contact position (X F , Y F ) is on the origin O, both semiconductor substrates are parallel, and the process proceeds to step S9. Then, it is determined whether or not the load F is larger than a lower limit B determined in consideration of a value sufficient for bonding the first semiconductor substrate Wu and the second semiconductor substrate Wd (step). S9). For example, 0.5 [N] is preferably set as the lower limit value B. If the load F is smaller than the lower limit B, the process returns to step S1. On the other hand, if the load F is larger than the lower limit B, the bonding is continued in this state, and the bonding process is completed after a predetermined time has elapsed.
  • a lower limit B determined in consideration of a value sufficient for bonding the first semiconductor substrate Wu and the second semiconductor substrate Wd
  • the control device 90 of the semiconductor substrate bonding apparatus 1 has the first drive mechanism 46.
  • the reaction forces generated in the second drive mechanism 48 and the moving mechanism 52 are calculated, and the first and second drive mechanisms 46 and 48 are repeatedly driven based on the drive amounts calculated from the reaction forces.
  • the inclination of the second substrate holding table 36 can be adjusted so that the parallelism of the second semiconductor substrate Wd with respect to the semiconductor substrate Wu becomes equal.
  • the control device 90 also includes a load F acting on a contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd, each reaction force generated in the first drive mechanism 46 and the second drive mechanism 48, Based on the position on the X-axis of the first drive mechanism 46 and the position on the Y-axis of the second drive mechanism 48, the contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd is calculated.
  • the first and second drive mechanisms 46 and 48 are repeatedly driven using the contact position so that the second semiconductor substrate Wd is parallel to the first semiconductor substrate Wu. ing. Thereby, control of the 1st and 2nd drive mechanisms 46 and 48 for inclination adjustment by control device 90 becomes easy.
  • the control device 90 lowers the tilt table 38 and causes the second substrate holding table 36 to move to the first substrate.
  • the moving mechanism 52 is driven so as to move in a direction away from the holding table 24. For this reason, it is possible to prevent the semiconductor substrates from being damaged by applying an excessive force between the semiconductor substrates to be bonded to each other.
  • control device 90 raises the tilt table 38 so that the second substrate holding table 36 moves in a direction approaching the first substrate holding table 24. Further, the moving mechanism 52 is driven. For this reason, bonding of the semiconductor substrates with an insufficient force can be avoided.
  • the stage device 34 is a drive mechanism in which the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 utilize fluid pressure, for example, air pressure, and controls the reaction force based on the change in the fluid pressure.
  • the calculation is performed by the device 90. For this reason, it is possible to detect a subtle inclination based on a change in fluid pressure at which a minute change is easy to detect, and to perform advanced inclination adjustment.
  • the two axes for tilting the second substrate holding table 36 around the respective axes by the first and second drive mechanisms 46 and 48 are origins which are the holding centers in the plan view of the second substrate holding table 36. And intersecting each other at an angle excluding 0 degrees and 180 degrees, for example, approximately 90 degrees, centering on the origin. Therefore, the first and second drive mechanisms 46 and 48 for tilting the second substrate holding table about each axis can operate independently, and the second substrate holding table 36 (that is, the second substrate holding table 36)
  • the semiconductor substrate Wd) can be inclined at various inclination angles with respect to the horizontal plane. Moreover, such a three-dimensional tilt angle adjustment of the second semiconductor substrate Wd can be realized with a simple structure.
  • the contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd is calculated based on the reaction forces generated by the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52.
  • the contact position may be calculated using a force component other than the reaction force.
  • the load acting on the second semiconductor substrate Wd is calculated to calculate the contact position.
  • the detecting unit detects an external force acting on the first semiconductor substrate Wu on the upper stage 20 side.
  • the contact position may be calculated by calculating a load acting on the first semiconductor substrate Wu.
  • the pressure gauge 52d is provided on the pipe P86 as shown in FIG. 5 in calculating the reaction force against the moving mechanism 52.
  • the reaction force against the moving mechanism 52 can be calculated, It is good also as a structure which provides the pressure gauge 52d in a part.
  • the pressure gauges are provided in the pipes P68, P70, etc., but the first drive mechanism 46 and As long as the reaction force with respect to the second drive mechanism 48 can be calculated, a configuration may be adopted in which a pressure gauge is provided in another portion.
  • the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 are configured to detect the reaction force based on the fluctuation of the air pressure.
  • a driving mechanism using another fluid may be used, and the reaction force may be detected by the fluctuation of the fluid pressure.
  • the second semiconductor substrate Wd held on the lower stage 30 is raised and brought into contact with the first semiconductor substrate Wu held on the upper stage 20.
  • the first semiconductor substrate Wu held on the upper stage 20 may be lowered and brought into contact with the second semiconductor substrate Wd held on the lower stage 30. Even in this case, advanced tilt adjustment based on the reaction force is possible.
  • a weight having a weight equal to the weight of the operating portion is provided at a position opposite to the position where the operating portion 60 of the side surface 38c of the tilt table 38 is provided, and the operating portion 62 of the side surface 38c is provided.
  • a weight having a weight equal to the weight of the operating portion can be provided at a position opposite to the provided position. In this case, the balance of the weight of the tilt table 38 in the X-axis direction and the Y-axis direction is maintained.
  • the tilt table 38 can be held in a posture where the mounting surface 38a of the tilt table is horizontal. Therefore, for example, compared with the case where the tilt of the tilt table 38 is adjusted by adjusting the amount of air supplied to the bellows actuators 68, 70, 74, 76, the posture of the tilt table 38 is easily returned to the initial posture. be able to.

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Abstract

A semiconductor substrate bonding apparatus (1) is provided with a first substrate holding table (24) for holding a first semiconductor substrate (Wu); a second substrate holding table (36) for holding a second semiconductor substrate (Wd); a first driving mechanism (46) for tilting and turning the second substrate holding table (36) in one direction about the shaft; a second driving mechanism (48), which tilts and turns the second substrate holding table (36) in the other direction about the shaft; and a control apparatus (90) for controlling drive of the first and the second drive mechanisms (46, 48). When the two substrates abut to each other, the control apparatus (90) calculates components of one and the other forces operating from the second semiconductor substrate (Wd) to the second substrate holding table (36), and based on each force component, the first and the second driving mechanisms (46, 48) are repeatedly driven, and the two substrates are bonded to each other with high parallelism.

Description

半導体基板貼り合わせ装置及び半導体基板貼り合わせ方法Semiconductor substrate bonding apparatus and semiconductor substrate bonding method
　本発明は、一の半導体基板を他の半導体基板に貼り合わせる半導体基板貼り合わせ装置及び半導体基板貼り合わせ方法に関する。特に、少なくとも一方の半導体基板を保持する基板保持テーブルの傾斜が調整される半導体基板貼り合わせ装置及び半導体基板貼り合わせ方法に関する。 The present invention relates to a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method for bonding one semiconductor substrate to another semiconductor substrate. In particular, the present invention relates to a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method in which the inclination of a substrate holding table that holds at least one semiconductor substrate is adjusted.
　半導体基板などの基板同士の貼り合わせにおいて、半導体基板貼り合わせ装置が用いられる。この半導体基板貼り合わせ装置は、２つの基板保持テーブルを備え、少なくとも一方の基板保持テーブルの傾斜はステージ装置によって調整される。ステージ装置は、一般的に、水平面内におけるＸＹ方向の位置決めを行うＸＹステージ上に搭載され、ＸＹステージによりＸＹ方向について半導体基板の位置決めがなされた後、回転（θ）方向及び鉛直（Ｚ）方向の位置決めを行うと共に、傾斜の調整を行うものである。 A semiconductor substrate bonding apparatus is used for bonding substrates such as semiconductor substrates. This semiconductor substrate bonding apparatus includes two substrate holding tables, and the inclination of at least one of the substrate holding tables is adjusted by a stage device. The stage device is generally mounted on an XY stage for positioning in the XY direction in a horizontal plane, and after the semiconductor substrate is positioned in the XY direction by the XY stage, the rotation (θ) direction and the vertical (Z) direction Positioning and adjusting the inclination.
　ここで、半導体基板同士を貼り合わせる際には、貼り合わせ不良や破損を防ぐため、半導体基板の高い平行度が要求される。従来、このような半導体基板同士の平行度を出す技術として、例えば特許文献１に開示されたものがある（なお、この特許文献１に開示の技術は、半導体基板同士の貼り合わせに関するものではなく、半導体チップとＴＡＢテープとのボンディングに関するものである）。この装置では、レーザ変位計やダイヤルゲージなどにより計測用部材３３を介してボンディングツール下面の傾斜を計測し、この計測値に基づいてチルトテーブル（プレート１６）の傾斜を調整することで、チップ搭載ステージ２０をボンディングツールの下面の平行度に倣い合わせている。
特開平９－６４０９４号公報 Here, when the semiconductor substrates are bonded together, high parallelism of the semiconductor substrates is required in order to prevent bonding failure and damage. Conventionally, as a technique for obtaining such parallelism between semiconductor substrates, for example, there is one disclosed in Patent Document 1 (Note that the technique disclosed in Patent Document 1 is not related to bonding between semiconductor substrates. , Relating to bonding of semiconductor chip and TAB tape). In this apparatus, a chip is mounted by measuring the tilt of the lower surface of the bonding tool through a measuring member 33 using a laser displacement meter, a dial gauge, or the like, and adjusting the tilt of the tilt table (plate 16) based on the measured value. The stage 20 is made to follow the parallelism of the lower surface of the bonding tool.
JP-A-9-64094
　しかしながら、上記した従来の技術を半導体基板の貼り合わせに利用したのでは、ある程度の平行度まで倣い合わせることはできるものの、達成できる平行度に限界があるため、残った微小な傾斜により過度な反力が作用して半導体基板を破損させたり、貼り合わせ不良が生じたりするおそれがあった。 However, if the above-described conventional technique is used for bonding the semiconductor substrates, it can be traced to a certain degree of parallelism, but there is a limit to the parallelism that can be achieved. There is a possibility that the semiconductor substrate may be damaged or a bonding failure may occur due to the force.
　本発明は、上記した事情に鑑みて為されたものであり、一の半導体基板に対する他の半導体基板の平行度を高くして両半導体基板を貼り合わせることが可能な半導体基板貼り合わせ装置及び半導体基板貼り合わせ方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and a semiconductor substrate bonding apparatus and a semiconductor capable of bonding both semiconductor substrates by increasing the parallelism of another semiconductor substrate with respect to one semiconductor substrate. It aims at providing the board | substrate bonding method.
　本発明に係る半導体基板貼り合わせ装置は、第１及び第２の半導体基板を互いに貼り合わせるための半導体基板貼り合わせ装置であって、第２の半導体基板を傾動させるための駆動部と、駆動部の作動を制御する制御部とを備え、制御部は、第１及び第２の半導体基板が一部で互いに接触した際、第１及び第２の半導体基板のうち少なくとも一方の半導体基板に作用する荷重を算出し、荷重に応じて、第１及び第２の半導体基板における一部以外の非接触部分が互いに近接するように駆動部の作動制御を行い、第１及び第２の半導体基板が互いに平行になるまで作動制御を繰り返し実行することを特徴とする。 A semiconductor substrate bonding apparatus according to the present invention is a semiconductor substrate bonding apparatus for bonding a first semiconductor substrate and a second semiconductor substrate to each other, and a driving unit for tilting the second semiconductor substrate, and a driving unit And a controller that controls at least one of the first and second semiconductor substrates when the first and second semiconductor substrates partially contact each other. The load is calculated, and in accordance with the load, operation control of the drive unit is performed so that non-contact parts other than a part of the first and second semiconductor substrates are close to each other, and the first and second semiconductor substrates are mutually connected. The operation control is repeatedly executed until they become parallel.
　この半導体基板貼り合わせ装置では、第１及び第２の半導体基板が一部で互いに接触した際、制御部は、少なくとも一方の半導体基板に作用する荷重を算出すると共に、その荷重に応じて、第１及び第２の半導体基板における一部以外の非接触部分が互いに近接するように駆動部の作動制御を行い、第１及び第２の半導体基板が互いに平行になるまで作動制御を繰り返し実行するようにしている。このため、一方の半導体基板に対する他方の半導体基板の微小な傾斜が徐々に減少して、両半導体基板が略平行となり、両半導体基板の平行度を高くした上で両半導体基板を貼り合わせることが可能となる。 In this semiconductor substrate bonding apparatus, when the first and second semiconductor substrates partially contact each other, the control unit calculates a load acting on at least one of the semiconductor substrates, and according to the load, The operation of the drive unit is controlled so that non-contact parts other than a part of the first and second semiconductor substrates are close to each other, and the operation control is repeatedly executed until the first and second semiconductor substrates are parallel to each other. I have to. For this reason, the minute inclination of the other semiconductor substrate with respect to one semiconductor substrate is gradually reduced, the two semiconductor substrates become substantially parallel, and the two semiconductor substrates can be bonded together after increasing the parallelism of the two semiconductor substrates. It becomes possible.
　本発明に係る半導体基板貼り合わせ装置において、第１及び第２の半導体基板が互いに接触する一部は、第１及び第２の半導体基板のうち少なくとも一方の半導体基板において、周縁の一部であることが好ましい。 In the semiconductor substrate bonding apparatus according to the present invention, the part where the first and second semiconductor substrates are in contact with each other is a part of the periphery of at least one of the first and second semiconductor substrates. It is preferable.
　本発明に係る半導体基板貼り合わせ装置は、第１の半導体基板を保持するための第１の基板保持テーブルと、第２の半導体基板を第１の半導体基板に対向するように保持するための第２の基板保持テーブルとを備え、駆動部は、第２の基板保持テーブルの平面視において互いに交差する二つの軸のうち一方の軸の周りに第２の基板保持テーブルを傾動させるための第１駆動機構と、一方の軸とは異なる他方の軸の周りに第２の基板保持テーブルを傾動させるための第２駆動機構とを有し、制御部は、第１の基板保持テーブルに保持された第１の半導体基板が第２の基板保持テーブルに保持された第２の半導体基板の周縁の一部に接触した際、第２の半導体基板から第２の基板保持テーブルに作用する力の一方の軸周りの力成分と他方の軸周りの力成分とを第２の半導体基板に作用する荷重として算出し、該各力成分に基づいて第１駆動機構及び第２駆動機構を駆動する作動制御を繰り返し実行することが好ましい。このようにすれば、第１の半導体基板に対する第２の半導体基板の微小な傾斜を、第２の半導体基板から第２の基板保持テーブルに作用する力の一方及び他方の軸周りの力成分として算出することが可能となり、これら各力成分に基づいて第１及び第２駆動機構を駆動して第２の基板保持テーブルの傾斜を調整することで、両半導体基板の平行度を高くして両半導体基板を貼り合わせることが可能となる。 A semiconductor substrate bonding apparatus according to the present invention includes a first substrate holding table for holding a first semiconductor substrate, and a first substrate for holding a second semiconductor substrate so as to face the first semiconductor substrate. The first substrate holding unit for tilting the second substrate holding table about one of two axes intersecting each other in plan view of the second substrate holding table. A driving mechanism and a second driving mechanism for tilting the second substrate holding table around the other axis different from the one axis, and the control unit is held by the first substrate holding table One of the forces acting on the second substrate holding table from the second semiconductor substrate when the first semiconductor substrate contacts a part of the periphery of the second semiconductor substrate held on the second substrate holding table. Force component around the axis and the other axis Of the force component is calculated as a load acting on the second semiconductor substrate, it is preferable to repeatedly perform the operation control for driving the first driving mechanism and the second driving mechanism based on the respective force component. According to this configuration, the minute inclination of the second semiconductor substrate with respect to the first semiconductor substrate is used as a force component around one and the other axes of the force acting on the second substrate holding table from the second semiconductor substrate. Based on these force components, the first and second drive mechanisms are driven to adjust the inclination of the second substrate holding table, thereby increasing the parallelism of both semiconductor substrates and increasing both of them. The semiconductor substrates can be bonded together.
　本発明に係る半導体基板貼り合わせ装置において、二つの軸は、第２の基板保持テーブルの平面視における保持中心である原点を通り且つ原点を中心として０度及び１８０度を除く角度で互いに交差していることが好ましい。このようにすれば、第２の基板保持テーブルを各軸回りに傾動させるための第１及び第２駆動機構は、それぞれ独立して作動することができ、第２の基板保持テーブル（つまり第２の半導体基板）を水平面に対して様々な傾斜角度へ傾斜させることができる。しかも、このような第２の半導体基板の三次元的な傾斜角度調整を簡単な構造で実現させることが可能となる。 In the semiconductor substrate bonding apparatus according to the present invention, the two axes cross each other at angles other than 0 degrees and 180 degrees centering on the origin through the origin that is the holding center in the plan view of the second substrate holding table. It is preferable. In this way, the first and second drive mechanisms for tilting the second substrate holding table about each axis can operate independently, and the second substrate holding table (that is, the second substrate holding table) The semiconductor substrate) can be inclined at various inclination angles with respect to the horizontal plane. Moreover, such a three-dimensional tilt angle adjustment of the second semiconductor substrate can be realized with a simple structure.
　本発明に係る半導体基板貼り合わせ装置において、二つの軸は、第２の基板保持テーブルの平面視における保持中心である原点を通り且つ原点を中心として互いに直交しており、制御部は、各力成分に基づいて、第２の半導体基板に対して第１の半導体基板から作用する力の重心位置を算出し、この重心位置が原点上でない場合、重心位置を利用して、第１駆動機構及び第２駆動機構の駆動量を算出することが好ましい。このようにすれば、複雑な測定が不要な各力成分から算出される重心位置に基づいて駆動量を算出することができるため、第１駆動機構及び第２駆動機構による第２の基板保持テーブルの傾斜調整を容易に制御することができる。なお、保持中心とは、第２の基板保持テーブル上の点であって、第２の半導体基板における重心に対応する点を意味する。 In the semiconductor substrate bonding apparatus according to the present invention, the two axes pass through the origin, which is the holding center in the plan view of the second substrate holding table, and are orthogonal to each other about the origin. Based on the component, the center of gravity position of the force acting on the second semiconductor substrate from the first semiconductor substrate is calculated, and when the center of gravity position is not on the origin, the center of gravity position is used to calculate the first drive mechanism and It is preferable to calculate the driving amount of the second driving mechanism. In this way, since the driving amount can be calculated based on the position of the center of gravity calculated from each force component that does not require complicated measurement, the second substrate holding table by the first driving mechanism and the second driving mechanism. Can be easily controlled. The holding center means a point on the second substrate holding table and corresponding to the center of gravity of the second semiconductor substrate.
　本発明に係る半導体基板貼り合わせ装置において、第１駆動機構は他方の軸上で第２の基板保持テーブルを傾動させるものであり、第２駆動機構は一方の軸上で第２の基板保持テーブルを傾動させるものである。そして、制御部は、第１の半導体基板と第２の半導体基板とが互いに当接した際、第１駆動機構及び第２駆動機構に生じる各反力をそれぞれ各力成分として算出することが好ましい。このようにすれば、両半導体基板が平行になるよう第２の基板保持テーブルを傾動させるために必要である第１駆動機構及び第２駆動機構を用いて、それら機構に生じる各反力を力成分として算出することができるため、簡易な構成の半導体基板貼り合わせ装置とすることができる。 In the semiconductor substrate bonding apparatus according to the present invention, the first driving mechanism tilts the second substrate holding table on the other axis, and the second driving mechanism is the second substrate holding table on the one axis. Is tilted. The controller preferably calculates each reaction force generated in the first drive mechanism and the second drive mechanism as each force component when the first semiconductor substrate and the second semiconductor substrate contact each other. . In this way, each reaction force generated in the mechanisms is applied to the first and second drive mechanisms necessary for tilting the second substrate holding table so that the two semiconductor substrates are parallel to each other. Since it can calculate as a component, it can be set as the semiconductor substrate bonding apparatus of a simple structure.
　本発明に係る半導体基板貼り合わせ装置において、第１駆動機構及び第２駆動機構は流体圧を利用した駆動機構であり、制御部は、この流体圧の変化に基づいて各反力を算出することが好ましい。このようにすれば、微小な変化が検出し易い流体圧の変化に基づいて各反力を算出することができ、算出精度が向上する。しかも、このように算出精度が高い反力に基づいて第２の基板保持テーブルの傾斜を調整することができるため、微小な傾斜調整を行なうことができる。 In the semiconductor substrate bonding apparatus according to the present invention, the first drive mechanism and the second drive mechanism are drive mechanisms using fluid pressure, and the control unit calculates each reaction force based on the change in the fluid pressure. Is preferred. In this way, each reaction force can be calculated based on a change in fluid pressure at which a minute change can be easily detected, and calculation accuracy is improved. In addition, since the inclination of the second substrate holding table can be adjusted based on the reaction force with high calculation accuracy in this way, minute inclination adjustment can be performed.
　本発明に係る半導体基板貼り合わせ装置は、第１の基板保持テーブルと第２の基板保持テーブルとを相対的に近づく方向及び離れる方向へ移動させるための移動機構を更に備えていることが好ましい。そして、制御部は、第１の半導体基板と第２の半導体基板とが互いに当接した際、移動機構に生じる力成分を算出し、この力成分と第２の基板保持テーブルに作用する各力成分と第１駆動機構及び第２駆動機構による第２の基板保持テーブルを傾動させる位置とに基づいて、重心位置を算出することが好ましい。このようにすれば、移動機構に生じる力成分と第２の基板保持テーブルに作用する各力成分と第１，第２駆動機構による第２の基板保持テーブルを傾動させる位置とに基づいて重心位置を算出して、第１，第２駆動機構の駆動量を算出することができるため、算出精度を向上させることができ、しかも、重心位置の算出を容易に行うことができる。 The semiconductor substrate bonding apparatus according to the present invention preferably further includes a moving mechanism for moving the first substrate holding table and the second substrate holding table in a relatively approaching direction and a separating direction. The control unit calculates a force component generated in the moving mechanism when the first semiconductor substrate and the second semiconductor substrate are in contact with each other, and the force component and each force acting on the second substrate holding table. It is preferable to calculate the position of the center of gravity based on the component and the position at which the second substrate holding table is tilted by the first drive mechanism and the second drive mechanism. In this case, the position of the center of gravity based on the force component generated in the moving mechanism, the force components acting on the second substrate holding table, and the position at which the second substrate holding table is tilted by the first and second drive mechanisms. Can be calculated to calculate the drive amounts of the first and second drive mechanisms, so that the calculation accuracy can be improved and the position of the center of gravity can be easily calculated.
　本発明に係る半導体基板貼り合わせ装置において、制御部は、第１の半導体基板と第２の半導体基板とが互いに当接した際、移動機構に生じる反力を力成分として算出することが更に好ましい。このようにすれば、両半導体基板を相対的に近づく方向及び離れる方向に移動させるために必要である移動機構を用いて、この機構に生じる反力を力成分として算出することができるため、簡易な構成の半導体基板貼り合わせ装置とすることができる。 In the semiconductor substrate bonding apparatus according to the present invention, it is further preferable that the control unit calculates a reaction force generated in the moving mechanism as a force component when the first semiconductor substrate and the second semiconductor substrate are in contact with each other. . In this way, the reaction force generated in this mechanism can be calculated as a force component using a moving mechanism that is necessary to move both semiconductor substrates in a relatively approaching direction and a separating direction. A semiconductor substrate bonding apparatus having a simple structure can be obtained.
　本発明に係る半導体基板貼り合わせ装置において、移動機構は流体圧を利用した駆動機構であって、制御部は、流体圧の変化に基づいて移動機構に生じる反力を算出することが好ましい。このようにすれば、微小な変化が検出し易い流体圧の変化に基づいて反力を算出することができ、算出精度が向上する。しかも、このように算出精度が高い反力に基づいて第２の基板保持テーブルの傾斜を調整することができるため、微小な傾斜調整を行なうことができる。 In the semiconductor substrate bonding apparatus according to the present invention, it is preferable that the moving mechanism is a driving mechanism using fluid pressure, and the control unit calculates a reaction force generated in the moving mechanism based on a change in fluid pressure. In this way, the reaction force can be calculated based on the change in the fluid pressure at which a minute change is easily detected, and the calculation accuracy is improved. In addition, since the inclination of the second substrate holding table can be adjusted based on the reaction force with high calculation accuracy in this way, minute inclination adjustment can be performed.
　本発明に係る半導体基板貼り合わせ装置において、制御部は、第１の半導体基板から第２の半導体基板に作用する荷重が上限値を超える場合、第１の基板保持テーブルと第２の基板保持テーブルとが相対的に離れる方向に移動するように移動機構を駆動することが好ましい。このようにすれば、両半導体基板を倣い制御させる際、半導体基板を破損させるような荷重が両半導体基板にかからないようにすることができる。その結果、半導体基板の破損を防止でき、歩留まりを向上させることができる。 In the semiconductor substrate bonding apparatus according to the present invention, when the load acting on the second semiconductor substrate from the first semiconductor substrate exceeds the upper limit value, the control unit includes the first substrate holding table and the second substrate holding table. It is preferable to drive the movement mechanism so that the movement mechanism moves away from each other. This makes it possible to prevent a load from damaging the semiconductor substrates from being applied to both the semiconductor substrates when the two semiconductor substrates are copied and controlled. As a result, damage to the semiconductor substrate can be prevented and yield can be improved.
　本発明に係る半導体基板貼り合わせ装置において、制御部は、重心位置が原点上である場合であって、且つ、第２の半導体基板への荷重が下限値を超えていない場合、第１の基板保持テーブルと第２の基板保持テーブルとが相対的に近づく方向に移動するように移動機構を駆動することが好ましい。このようにすれば、両半導体基板を倣い制御させる際、半導体基板の貼り合わせに必要な荷重が両半導体基板に適切にかかるようにすることができる。その結果、不十分な荷重による貼り合わせ不良を避けることができ、歩留まりを向上させることができる。 In the semiconductor substrate bonding apparatus according to the present invention, the control unit is a first substrate when the position of the center of gravity is on the origin and the load on the second semiconductor substrate does not exceed the lower limit value. It is preferable to drive the moving mechanism so that the holding table and the second substrate holding table move in a relatively approaching direction. In this way, when the two semiconductor substrates are copied and controlled, a load necessary for bonding the semiconductor substrates can be appropriately applied to both the semiconductor substrates. As a result, bonding failure due to insufficient load can be avoided, and yield can be improved.
　本発明に係る半導体基板貼り合わせ方法は、第１及び第２の半導体基板を互いに貼り合わせるための半導体基板貼り合わせ方法であって、第１及び第２の半導体基板が一部で互いに接触した際、第１及び第２の半導体基板のうち少なくとも一方の半導体基板に作用する荷重を算出する算出工程と、算出工程で算出された荷重に応じて、第１及び第２の半導体基板における一部以外の非接触部分が互いに近接するように、第２の半導体基板を傾動させる傾動工程と、第１及び第２の半導体基板が互いに平行になるまで算出工程及び傾動工程を繰り返し実行する繰返工程とを含むことを特徴とする。 The semiconductor substrate bonding method according to the present invention is a semiconductor substrate bonding method for bonding the first and second semiconductor substrates to each other, and the first and second semiconductor substrates are partially in contact with each other. A calculation step of calculating a load acting on at least one of the first and second semiconductor substrates, and a portion other than a part of the first and second semiconductor substrates according to the load calculated in the calculation step A tilting step of tilting the second semiconductor substrate so that the non-contact portions of each other are close to each other, and a repeating step of repeatedly executing the calculation step and the tilting step until the first and second semiconductor substrates are parallel to each other It is characterized by including.
　この半導体基板貼り合わせ方法では、算出工程において少なくとも一方の半導体基板に作用する荷重を算出すると共に、傾動工程において、その荷重に応じて、第１及び第２の半導体基板における一部以外の非接触部分が互いに近接するように第２の半導体基板を傾動させ、繰返工程において、第１及び第２の半導体基板が互いに平行になるまで算出工程及び傾動工程を繰り返すようにしている。このため、一方の半導体基板に対する他方の半導体基板の微小な傾斜が徐々に減少して、両半導体基板が略平行となり、両半導体基板の平行度を高くした上で両半導体基板を貼り合わせることが可能となる。 In this semiconductor substrate bonding method, a load acting on at least one semiconductor substrate is calculated in the calculation step, and in the tilting step, non-contact other than a part of the first and second semiconductor substrates according to the load. The second semiconductor substrate is tilted so that the portions are close to each other, and in the repeating process, the calculation process and the tilting process are repeated until the first and second semiconductor substrates are parallel to each other. For this reason, the minute inclination of the other semiconductor substrate with respect to one semiconductor substrate is gradually reduced, the two semiconductor substrates become substantially parallel, and the two semiconductor substrates can be bonded together after increasing the parallelism of the two semiconductor substrates. It becomes possible.
　本発明に係る半導体基板貼り合わせ方法において、算出工程では、第１の半導体基板が第２の半導体基板の周縁の一部に接触した際、第２の半導体基板の平面視において互いに交差する二つの軸のうち一方の軸の周りの力成分と一方の軸とは異なる他方の軸周りの力成分とを第２の半導体基板に作用する荷重として算出し、傾動工程では、各力成分に基づいて、第２の半導体基板の周縁の一部以外の非接触部分が、第１の半導体基板における非接触部分に近接するように第２の半導体基板を傾動させることが好ましい。このようにすれば、第１の半導体基板に対する第２の半導体基板の微小な傾斜を、第２の半導体基板から第２の基板保持テーブルに作用する力の一方及び他方の軸周りの力成分として算出することが可能となり、これら各力成分に基づいて調整することで、両半導体基板の平行度を高くして両半導体基板を貼り合わせることが可能となる。 In the semiconductor substrate bonding method according to the present invention, in the calculation step, when the first semiconductor substrate contacts a part of the periphery of the second semiconductor substrate, the two crossing each other in a plan view of the second semiconductor substrate. A force component around one of the axes and a force component around the other axis different from the one axis are calculated as loads acting on the second semiconductor substrate, and in the tilting step, based on each force component Preferably, the second semiconductor substrate is tilted so that a non-contact portion other than a part of the peripheral edge of the second semiconductor substrate is close to the non-contact portion of the first semiconductor substrate. According to this configuration, the minute inclination of the second semiconductor substrate with respect to the first semiconductor substrate is used as a force component around one and the other axes of the force acting on the second substrate holding table from the second semiconductor substrate. It becomes possible to calculate, and by adjusting based on each of these force components, it becomes possible to increase the parallelism of both semiconductor substrates and bond the two semiconductor substrates together.
　本発明によれば、一の半導体基板に対する他の半導体基板の平行度を高くして両半導体基板を貼り合わせることが可能な半導体基板貼り合わせ装置及び半導体基板貼り合わせ方法を提供することができる。 According to the present invention, it is possible to provide a semiconductor substrate bonding apparatus and a semiconductor substrate bonding method capable of bonding both semiconductor substrates by increasing the parallelism of another semiconductor substrate with respect to one semiconductor substrate.
半導体基板貼り合わせ装置の構成を模式的に示す概略図である。It is the schematic which shows the structure of a semiconductor substrate bonding apparatus typically. 第２の基板保持テーブルとチルトテーブルの構成を示す部分拡大図である。It is the elements on larger scale which show the structure of the 2nd board | substrate holding table and a tilt table. ステージ装置（チルトテーブルより上部の構成を図示略）の斜視図である。It is a perspective view of a stage device (the configuration above the tilt table is not shown). ステージ装置（チルトテーブルより上部の構成を図示略）を別の角度から見た斜視図である。It is the perspective view which looked at the stage apparatus (The structure above a tilt table is abbreviate | omitting illustration) from another angle. 図３のＶ－Ｖ線に沿う断面図である。FIG. 5 is a sectional view taken along line VV in FIG. 3. 図５の第１駆動機構の部分拡大図である。FIG. 6 is a partially enlarged view of the first drive mechanism of FIG. 5. 第１駆動機構、第２駆動機構、及び移動機構のＸＹ座標系における配置関係を示す図である。It is a figure which shows the arrangement | positioning relationship in the XY coordinate system of a 1st drive mechanism, a 2nd drive mechanism, and a moving mechanism. 図１の半導体基板貼り合わせ装置により半導体基板を貼り合わせるときのステージ装置の制御方法を示すフローチャートである。It is a flowchart which shows the control method of a stage apparatus when bonding a semiconductor substrate with the semiconductor substrate bonding apparatus of FIG. 両半導体基板の接触位置Ｔ（重心位置）を示した図である。It is the figure which showed the contact position T (gravity center position) of both semiconductor substrates. Ｘ、Ｙ軸周りの第２の半導体基板の傾斜角度を示した図である。It is the figure which showed the inclination-angle of the 2nd semiconductor substrate around an X-axis and a Y-axis.
符号の説明Explanation of symbols
　１…半導体基板貼り合わせ装置、２４・・・第１の基板保持テーブル、３６…第２の基板保持テーブル、４６…第１駆動機構、４８…第２駆動機構、５２…移動機構、５２ｄ，６８ｇ，７０ｇ…圧力計、９０…制御装置、Ｏ…原点、Ｔ…接触位置（重心位置）、Ｗｕ…第１の半導体基板、Ｗｄ…第２の半導体基板。 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate bonding apparatus, 24 ... 1st board | substrate holding table, 36 ... 2nd board | substrate holding table, 46 ... 1st drive mechanism, 48 ... 2nd drive mechanism, 52 ... Moving mechanism, 52d, 68g , 70 g ... pressure gauge, 90 ... control device, O ... origin, T ... contact position (center of gravity position), Wu ... first semiconductor substrate, Wd ... second semiconductor substrate.
　以下、図面を参照しつつ本発明の好適な実施形態について詳細に説明する。なお、図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.
　図１は、本実施形態に係る半導体基板貼り合わせ装置の構成を模式的に示す概略図である。図１に示すように、半導体基板貼り合わせ装置１は、除振器１２、定盤１４、ボディー１６、上部ステージ２０、下部ステージ３０、及び制御装置（制御部）９０を備えている。 FIG. 1 is a schematic view schematically showing a configuration of a semiconductor substrate bonding apparatus according to the present embodiment. As shown in FIG. 1, the semiconductor substrate bonding apparatus 1 includes a vibration isolator 12, a surface plate 14, a body 16, an upper stage 20, a lower stage 30, and a control device (control unit) 90.
　除振器１２は、半導体基板貼り合わせ装置１へ伝わる振動を取り除く。この除振器１２の上に、定盤１４が設けられている。ボディー１６は、側壁部と上壁部とを有し、定盤１４上で密閉空間を形成する。 The vibration isolator 12 removes vibration transmitted to the semiconductor substrate bonding apparatus 1. A surface plate 14 is provided on the vibration isolator 12. The body 16 has a side wall portion and an upper wall portion, and forms a sealed space on the surface plate 14.
　上部ステージ２０は、ボディー１６の上壁部の内面に搭載されている。上部ステージ２０は、ＸＹθステージ２２と第１の基板保持テーブル２４とを有している。第１の基板保持テーブル２４は、貼り合わせの対象である第１の半導体基板Ｗｕを、静電吸着や真空吸着により保持する。ＸＹθステージ２２は、水平面内で第１の基板保持テーブル２４に保持された第１の半導体基板ＷｕのＸＹθ方向の位置決めを行う。 The upper stage 20 is mounted on the inner surface of the upper wall portion of the body 16. The upper stage 20 has an XYθ stage 22 and a first substrate holding table 24. The first substrate holding table 24 holds the first semiconductor substrate Wu to be bonded by electrostatic chucking or vacuum chucking. The XYθ stage 22 performs positioning in the XYθ direction of the first semiconductor substrate Wu held by the first substrate holding table 24 in a horizontal plane.
　下部ステージ３０は、定盤１４上に搭載されている。下部ステージ３０は、ＸＹステージ３２とステージ装置３４とを有している。ステージ装置３４は、第２の基板保持テーブル３６、チルトテーブル３８、支持テーブル４５、第１駆動機構（駆動部）４６、第２駆動機構（駆動部）４８、θ駆動機構５０、及び移動機構５２を備えている。 The lower stage 30 is mounted on the surface plate 14. The lower stage 30 has an XY stage 32 and a stage device 34. The stage device 34 includes a second substrate holding table 36, a tilt table 38, a support table 45, a first driving mechanism (driving unit) 46, a second driving mechanism (driving unit) 48, a θ driving mechanism 50, and a moving mechanism 52. It has.
　このステージ装置３４は、チルトテーブル３８を第１及び第２駆動機構４６，４８で駆動し、支持テーブル４５をθ駆動機構５０で駆動することによって、載置面３８ａ（すなわち、載置面３８ａ上に搭載された第２の基板保持テーブル３６に保持される第２の半導体基板Ｗｄ）の傾斜角度調整及び回動角度調整が行われる。また、エアシリンダである移動機構５２によって、高さ位置の調整も行われる。なお、図３及び図４に示すように、水平面内で互いに９０度をなすようにＸ軸及びＹ軸を設定し、鉛直方向にＺ軸を定めて３次元直交座標系を設定し、以下必要な場合にＸＹＺ座標系を用いて説明する。 In this stage device 34, the tilt table 38 is driven by the first and second drive mechanisms 46, 48, and the support table 45 is driven by the θ drive mechanism 50, whereby the placement surface 38a (ie, on the placement surface 38a). The inclination angle adjustment and the rotation angle adjustment of the second semiconductor substrate Wd) held by the second substrate holding table 36 mounted on the substrate are performed. The height position is also adjusted by the moving mechanism 52 that is an air cylinder. As shown in FIGS. 3 and 4, the X axis and the Y axis are set so as to be 90 degrees in the horizontal plane, the Z axis is set in the vertical direction, and a three-dimensional orthogonal coordinate system is set. The case will be described using the XYZ coordinate system.
　第２の基板保持テーブル３６は、図１及び図２に示すように、貼り合わせの対象である第２の半導体基板Ｗｄを保持する。この第２の基板保持テーブル３６は、静電力によりウェハを吸着する静電チャックＥＳＣと、静電チャックＥＳＣを真空吸着する真空チャックＶＡＣとを有している。 As shown in FIGS. 1 and 2, the second substrate holding table 36 holds the second semiconductor substrate Wd to be bonded. The second substrate holding table 36 includes an electrostatic chuck ESC that sucks a wafer by electrostatic force and a vacuum chuck VAC that vacuum-sucks the electrostatic chuck ESC.
　チルトテーブル３８は、図３から図５に示すように、円板状のテーブルであり、第２の基板保持テーブル３６を載置するための平面状の載置面３８ａを上面側に有し、凸球面状の軸受面３８ｂを下面側に有する。この軸受面３８ｂの鉛直方向の中心軸線Ｌはチルトテーブル３８の中心軸線と一致する。 As shown in FIGS. 3 to 5, the tilt table 38 is a disk-shaped table, and has a flat mounting surface 38 a on the upper surface side for mounting the second substrate holding table 36. A convex spherical bearing surface 38b is provided on the lower surface side. The central axis L in the vertical direction of the bearing surface 38 b coincides with the central axis of the tilt table 38.
　チルトテーブル３８の側面３８ｃには、中心軸線Ｌから見てＸ軸方向の位置に、断面Ｌ字型の作動部６０が設けられる。図３から図５に示すように、作動部６０は、支持テーブル４５よりも低い位置でＸ軸方向に突出する第１の作動片６０ｃと、第１の作動片６０ｃの中心軸線Ｌ側の端部と側面３８ｃとを連結させるための鉛直方向に延びる連結部６０ｄとを有している。また、側面３８ｃには、中心軸線Ｌから見てＹ軸方向の位置に、断面Ｌ字型の作動部６２が設けられている。図４に示すように、作動部６２は、支持テーブル４５よりも低い位置でＹ軸方向に突出する第２の作動片６２ｃと、第２の作動片６２ｃの中心軸線Ｌ側の端部と側面３８ｃとを連結させるための鉛直方向に延びる連結部６２ｄとを有している。なお、第１の及び第２の作動片６０ｃ，６２ｃはＸＹ平面上に広がる矩形板とされている。 On the side surface 38c of the tilt table 38, an operation portion 60 having an L-shaped cross section is provided at a position in the X-axis direction when viewed from the central axis L. As shown in FIGS. 3 to 5, the operating unit 60 includes a first operating piece 60 c that protrudes in the X-axis direction at a position lower than the support table 45, and an end on the central axis L side of the first operating piece 60 c. And a connecting portion 60d extending in the vertical direction for connecting the portion and the side surface 38c. Further, the side surface 38c is provided with an operation section 62 having an L-shaped cross section at a position in the Y-axis direction when viewed from the central axis L. As shown in FIG. 4, the operating portion 62 includes a second operating piece 62 c that protrudes in the Y-axis direction at a position lower than the support table 45, and an end portion and a side surface on the central axis L side of the second operating piece 62 c. And a connecting portion 62d extending in the vertical direction for connecting 38c. The first and second operating pieces 60c and 62c are rectangular plates that extend on the XY plane.
　矩形状の支持テーブル４５は、エアシリンダである移動機構５２に設けられたロッド５３の上端に形成されている。図５に示すように、支持テーブル４５の上面の略中央部には、チルトテーブル３８の軸受面３８ｂを支持するために凹球面状とされた軸受面４５ｂが形成されている。 The rectangular support table 45 is formed at the upper end of a rod 53 provided in a moving mechanism 52 that is an air cylinder. As shown in FIG. 5, a bearing surface 45 b having a concave spherical surface is formed at a substantially central portion of the upper surface of the support table 45 to support the bearing surface 38 b of the tilt table 38.
　また、支持テーブル４５には、軸受面４５ｂを形成するように多孔部４５ｃが埋設され、軸受面４５ｂには多数の微小な孔が形成されている。この多孔部４５ｃからは、パイプＰ４５が導出されて外部の空気圧源（図示せず）と接続されている。空気圧源は、多孔部４５ｃへ圧縮空気を供給し、その圧縮空気が軸受面４５ｂの多数の孔から軸受面３８ｂに対して吹きつけられる。これによって、軸受面３８ｂと軸受面４５ｂの間に空気膜が形成され、軸受面３８ｂは、軸受面４５ｂから抵抗を受けることなく非接触状態で支持されることとなる。 Further, the support table 45 is embedded with a porous portion 45c so as to form a bearing surface 45b, and a large number of minute holes are formed in the bearing surface 45b. A pipe P45 is led out from the porous portion 45c and connected to an external air pressure source (not shown). The air pressure source supplies compressed air to the porous portion 45c, and the compressed air is blown against the bearing surface 38b from a large number of holes in the bearing surface 45b. As a result, an air film is formed between the bearing surface 38b and the bearing surface 45b, and the bearing surface 38b is supported in a non-contact state without receiving resistance from the bearing surface 45b.
　支持テーブルの側面４５ｄには、図３に示すように、中心軸線Ｌから見てＹ軸の反対方向の位置に、断面Ｌ字型の作動部６４が設けられる。作動部６４は、Ｙ軸の負の方向へ突出する連結部６４ｄと、連結部６４ｄの自由端部から下方へ突出する第３の作動片６４ｃを有している。なお、第３の作動片６４ｃは、ＹＺ平面上に広がる矩形板とされている。 As shown in FIG. 3, an operating portion 64 having an L-shaped cross section is provided on the side surface 45d of the support table at a position opposite to the Y axis when viewed from the central axis L. The operating part 64 has a connecting part 64d that protrudes in the negative direction of the Y-axis, and a third operating piece 64c that protrudes downward from the free end of the connecting part 64d. The third operating piece 64c is a rectangular plate extending on the YZ plane.
　第１駆動機構４６は、図３から図５に示すように、第１の作動片６０ｃの上方に配置された支持片６６ａ及び下方に配置された支持片６６ｂとを有する支持部材６６と、支持片６６ａと第１の作動片６０ｃとの間に延在するベローズアクチュエータ６８と、支持片６６ｂと第１の作動片６０ｃとの間に延在するベローズアクチュエータ７０とからなる。そして、第１の作動片６０ｃは、ベローズアクチュエータ６８の先端とベローズアクチュエータ７０の先端とで挟み込まれる。また、支持部材６６は、支持片６６ａ，６６ｂを連結させる矩形板状の連結部６６ｃを有しており、連結部６６ｃの支持テーブル４５側の側面は、支持テーブル４５に固定されている。 As shown in FIGS. 3 to 5, the first drive mechanism 46 includes a support member 66 having a support piece 66 a disposed above the first operating piece 60 c and a support piece 66 b disposed below, and a support member 66. It consists of a bellows actuator 68 extending between the piece 66a and the first operating piece 60c, and a bellows actuator 70 extending between the support piece 66b and the first operating piece 60c. The first operating piece 60 c is sandwiched between the tip of the bellows actuator 68 and the tip of the bellows actuator 70. Further, the support member 66 has a rectangular plate-like connection portion 66c for connecting the support pieces 66a and 66b, and the side surface of the connection portion 66c on the support table 45 side is fixed to the support table 45.
　ベローズアクチュエータ６８は、図６に示すように、鉛直方向に伸縮可能なベローズ６８ａと、ベローズ６８ａの下端側の開口部を封止する円板状の作動板６８ｂとを備える。ベローズ６８ａの上端側の開口部は支持片６６ａに固定されることにより封止される。これによって、ベローズアクチュエータ６８の内部空間６８ｃは、ベローズ６８ａと支持片６６ａと作動板６８ｂとによって密閉され、その気密性は保たれている。 As shown in FIG. 6, the bellows actuator 68 includes a bellows 68 a that can be expanded and contracted in the vertical direction, and a disk-shaped operation plate 68 b that seals the opening on the lower end side of the bellows 68 a. The opening on the upper end side of the bellows 68a is sealed by being fixed to the support piece 66a. Thus, the internal space 68c of the bellows actuator 68 is sealed by the bellows 68a, the support piece 66a, and the operation plate 68b, and the airtightness thereof is maintained.
　作動板６８ｂの中央部には、上方へ延びるシャフト６８ｄが形成され、このシャフト６８ｄは、支持片６６ａに設けられたボス６６ｄのガイド穴に挿入されることによって鉛直方向に移動可能とされている。また、作動板６８ｂの中央部には、第１の作動片６０ｃへ向かって突出する半球面状の押圧部６８ｅが形成され、この押圧部６８ｅは、第１の作動片６０ｃの上面６０ａと当接することによってベローズアクチュエータ６８の鉛直方向の駆動に伴い発生する力を第１の作動片６０ｃに伝達することができる。ベローズアクチュエータ６８の押圧部６８ｅが球状をなしていることから、押圧部６８ｅは作動部６０の第１の作動片６０ｃに点接触する。 A shaft 68d extending upward is formed at the central portion of the operating plate 68b. The shaft 68d is movable in the vertical direction by being inserted into a guide hole of a boss 66d provided in the support piece 66a. . A hemispherical pressing portion 68e that protrudes toward the first operating piece 60c is formed at the center of the operating plate 68b, and the pressing portion 68e contacts the upper surface 60a of the first operating piece 60c. By contacting, the force generated when the bellows actuator 68 is driven in the vertical direction can be transmitted to the first operating piece 60c. Since the pressing portion 68e of the bellows actuator 68 is spherical, the pressing portion 68e makes point contact with the first operating piece 60c of the operating portion 60.
　ベローズアクチュエータ６８の内部空間６８ｃからは、パイプＰ６８が導出され、外部に設けられたサーボ弁６８ｆと接続されている。そして、サーボ弁６８ｆを制御することで、内部空間６８ｃ内の空気を供給及び排出することができ、内部空間６８ｃの気圧の変化に伴って、作動板６８ｂの鉛直方向の移動量を任意に制御することができる。 A pipe P68 is led out from the internal space 68c of the bellows actuator 68 and is connected to a servo valve 68f provided outside. Then, by controlling the servo valve 68f, the air in the internal space 68c can be supplied and discharged, and the amount of movement of the operating plate 68b in the vertical direction can be arbitrarily controlled in accordance with the change in the atmospheric pressure in the internal space 68c. can do.
　また、ベローズアクチュエータ６８には、内部空間６８ｃ内の気圧を継続的に計測する圧力計６８ｇが備えられている。そして、計測された気圧情報は、制御装置９０へ送られる。従って、後述する第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとの貼り合わせの際に発生する荷重によって第１の作動片６０ｃが上昇等させられた場合における内部空間６８ｃ内の気圧変化を制御装置９０で算出できるようになっている。圧力計６８ｇは、荷重の元となる外力を検出する検出部として機能し、制御装置９０は、この気圧変化に基づき、ベローズアクチュエータ６８に生じる反力を算出できるようになっている。なお、後述する各種の圧力計も、検出部として機能する。 The bellows actuator 68 is provided with a pressure gauge 68g that continuously measures the atmospheric pressure in the internal space 68c. The measured atmospheric pressure information is sent to the control device 90. Accordingly, a change in atmospheric pressure in the internal space 68c when the first operating piece 60c is raised by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd described later are bonded to each other. It can be calculated by the control device 90. The pressure gauge 68g functions as a detection unit that detects an external force that is a source of a load, and the control device 90 can calculate a reaction force generated in the bellows actuator 68 based on the change in atmospheric pressure. Various pressure gauges described later also function as a detection unit.
　ベローズアクチュエータ７０も、上述のベローズアクチュエータ６８と同様の構成を有し、サーボ弁７０ｆを制御することで作動板７０ｂの鉛直方向の移動量を任意に制御することができる。また、押圧部７０ｅは、押圧部６８ｅと同様に半球面状をなしており、作動部６０の下面６０ｂに点接触する。押圧部７０ｅが第１の作動片６０ｃの下面６０ｂと当接することによって、ベローズアクチュエータ７０の鉛直方向の駆動に伴い発生する力を第１の作動片６０ｃに伝達することができる。なお、ベローズアクチュエータ７０は、ベローズ７０ａ、内部空間７０ｃ、シャフト７０ｄを備え、内部空間７０ｃとサーボ弁７０ｆとはパイプＰ７０で連結されている。 The bellows actuator 70 has the same configuration as the bellows actuator 68 described above, and the amount of movement of the operation plate 70b in the vertical direction can be arbitrarily controlled by controlling the servo valve 70f. The pressing portion 70e has a hemispherical shape like the pressing portion 68e, and makes point contact with the lower surface 60b of the operating portion 60. When the pressing portion 70e comes into contact with the lower surface 60b of the first operating piece 60c, the force generated when the bellows actuator 70 is driven in the vertical direction can be transmitted to the first operating piece 60c. The bellows actuator 70 includes a bellows 70a, an internal space 70c, and a shaft 70d, and the internal space 70c and the servo valve 70f are connected by a pipe P70.
　また、ベローズアクチュエータ７０には、内部空間７０ｃ内の気圧を継続的に計測する圧力計７０ｇが備えられている。そして、計測された気圧情報は、制御装置９０へ送られる。従って、後述する第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとの貼り合わせの際に発生する荷重によって第１の作動片６０ｃが下降等させられた場合における内部空間７０ｃ内の気圧変化を制御装置９０で算出できるようになっている。また、この気圧変化に基づき、ベローズアクチュエータ７０に生じる反力を制御装置９０で算出できるようになっている。 The bellows actuator 70 is provided with a pressure gauge 70g that continuously measures the atmospheric pressure in the internal space 70c. The measured atmospheric pressure information is sent to the control device 90. Accordingly, a change in atmospheric pressure in the internal space 70c when the first operating piece 60c is lowered by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd, which will be described later, are bonded together. It can be calculated by the control device 90. Further, based on this change in atmospheric pressure, the reaction force generated in the bellows actuator 70 can be calculated by the control device 90.
　第２駆動機構４８は、図４に示すように、第２の作動片６２ｃの上方に配置された支持片７２ａ及び下方に配置された支持片７２ｂを有する断面コ字型の支持部材７２と、支持片７２ａと第２の作動片６２ｃとの間に延在するベローズアクチュエータ７４と、支持片７２ｂと第２の作動片６２ｃとの間に延在するベローズアクチュエータ７６とからなる。そして、第２の作動片６２ｃは、ベローズアクチュエータ７４の先端とベローズアクチュエータ７６の先端とで挟み込まれる。また、支持部材７２は、支持片７２ａと支持片７２ｂとを連結させる矩形板状の連結部７２ｃを有し、連結部７２ｃの支持テーブル４５側の側面は、支持テーブル４５に固定されている。また、ベローズアクチュエータ７４，７６は、ベローズアクチュエータ６８，７０と同様の構成を有しており、ベローズアクチュエータ７４，７６の内部空間内の気圧を計測する圧力計をそれぞれ備えている。そして、これらの圧力計から制御装置９０へ気圧情報を送り、ベローズアクチュエータ７４，７６に生じる気圧変化及び反力を算出できるようになっている。 As shown in FIG. 4, the second drive mechanism 48 has a U-shaped support member 72 having a support piece 72 a disposed above the second operating piece 62 c and a support piece 72 b disposed below. The bellows actuator 74 extends between the support piece 72a and the second operation piece 62c, and the bellows actuator 76 extends between the support piece 72b and the second operation piece 62c. The second operating piece 62 c is sandwiched between the tip of the bellows actuator 74 and the tip of the bellows actuator 76. The support member 72 has a rectangular plate-like connecting portion 72c that connects the support piece 72a and the support piece 72b, and the side surface of the connecting portion 72c on the support table 45 side is fixed to the support table 45. Moreover, the bellows actuators 74 and 76 have the same configuration as the bellows actuators 68 and 70, and are each provided with a pressure gauge that measures the atmospheric pressure in the internal space of the bellows actuators 74 and 76. The atmospheric pressure information is sent from these pressure gauges to the control device 90, and the atmospheric pressure change and reaction force generated in the bellows actuators 74 and 76 can be calculated.
　θ駆動機構５０は、図３に示すように、第３の作動片６４ｃを間に挟むようにＸ軸方向に離間して配置された支持片５６ａ及び支持片５６ｂを有する断面コ字型の支持部材５６と、支持片５６ａと第３の作動片６４ｃとの間に延在するベローズアクチュエータ７８と、支持片５６ｂと第３の作動片６４ｃとの間に延在するベローズアクチュエータ８０とからなる。そして、第３の作動片６４ｃは、ベローズアクチュエータ７８の先端とベローズアクチュエータ８０の先端とで挟み込まれている。また、支持部材５６は、支持片５６ａと支持片５６ｂとを連結する矩形板状の連結部５６ｃを有し、連結部５６ｃは、ベースプレート８２の上面８２ａに固定されている。なお、ベローズアクチュエータ７８，８０の構成は、ベローズアクチュエータ６８，７０と同様の構成を有している。 As shown in FIG. 3, the θ drive mechanism 50 has a U-shaped support having a support piece 56 a and a support piece 56 b that are spaced apart in the X-axis direction so as to sandwich the third operating piece 64 c therebetween. The member 56 includes a bellows actuator 78 extending between the support piece 56a and the third operating piece 64c, and a bellows actuator 80 extending between the support piece 56b and the third operating piece 64c. The third operating piece 64 c is sandwiched between the tip of the bellows actuator 78 and the tip of the bellows actuator 80. The support member 56 has a rectangular plate-like connection portion 56 c that connects the support piece 56 a and the support piece 56 b, and the connection portion 56 c is fixed to the upper surface 82 a of the base plate 82. The bellows actuators 78 and 80 have the same configuration as the bellows actuators 68 and 70.
　エアシリンダである移動機構５２のロッド５３は、図５に示すように、下端に円筒体５２ａの内周と略同一の径を有する円板状のピストン５３ａを有する。円筒体５２ａの内部空間において、ピストン５３ａよりも上側の内部空間５２ｂ及び下側の内部空間５２ｃからは、それぞれパイプＰ８４，Ｐ８６が導出されている。このパイプＰ８６には、下側の内部空間５２ｃの気圧を継続的に計測する圧力計５２ｄが備えられている。そして、計測された気圧情報は、制御装置９０へ送られる。従って、後述する第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとの貼り合わせの際に発生する荷重によって支持テーブル４５が下降等させられた場合における内部空間５２ｃ内の気圧変化を制御装置９０で算出できるようになっている。また、この気圧変化に基づき、移動機構５２に生じる反力を制御装置９０で算出できるようになっている。 As shown in FIG. 5, the rod 53 of the moving mechanism 52, which is an air cylinder, has a disc-shaped piston 53a having a diameter substantially the same as the inner periphery of the cylindrical body 52a at the lower end. In the internal space of the cylindrical body 52a, pipes P84 and P86 are led out from the internal space 52b above the piston 53a and the internal space 52c below. The pipe P86 is provided with a pressure gauge 52d that continuously measures the atmospheric pressure in the lower internal space 52c. The measured atmospheric pressure information is sent to the control device 90. Therefore, the control device 90 controls the change in atmospheric pressure in the internal space 52c when the support table 45 is lowered by a load generated when the first semiconductor substrate Wu and the second semiconductor substrate Wd described later are bonded to each other. It can be calculated by. Further, based on this change in atmospheric pressure, the control device 90 can calculate the reaction force generated in the moving mechanism 52.
　次に、第１駆動機構４６、第２駆動機構４８、移動機構５２のＸＹ座標系における配置関係について説明する。図７等に示すように、第１駆動機構４６及び第２駆動機構４８は互いに略９０度の角度をなして配置されている。そして、第１駆動機構４６はＸ軸上に配置されてＹ軸周りの傾斜調整を行い、第２駆動機構４８はＹ軸上に配置されてＸ軸周りの傾斜調整を行うようになっている。Ｘ軸及びＹ軸の二つの軸は、チルトテーブル３８（チルトテーブル３８上に載置される第２の基板保持テーブル３６）の平面視における保持中心である原点Ｏを通り且つ原点Ｏを中心として互いに直交している。また、移動機構５２は、その中心が中心軸線Ｌと一致しており、チルトテーブル３８のＸＹ座標系における原点Ｏと同じ位置となっている。なお、第１及び第２駆動機構４６，４８が配置される二つの軸は、原点Ｏを中心として０度及び１８０度を除く角度で互いに交差していればよく、略９０度の角度でなくてもよい。 Next, the arrangement relationship of the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 in the XY coordinate system will be described. As shown in FIG. 7 and the like, the first drive mechanism 46 and the second drive mechanism 48 are arranged at an angle of approximately 90 degrees. The first drive mechanism 46 is disposed on the X axis and performs tilt adjustment around the Y axis, and the second drive mechanism 48 is disposed on the Y axis and performs tilt adjustment around the X axis. . The two axes, the X axis and the Y axis, pass through the origin O, which is the holding center in the plan view of the tilt table 38 (the second substrate holding table 36 placed on the tilt table 38), and are centered on the origin O. They are orthogonal to each other. Further, the center of the moving mechanism 52 coincides with the central axis L, and is at the same position as the origin O in the XY coordinate system of the tilt table 38. Note that the two axes on which the first and second drive mechanisms 46 and 48 are disposed need only intersect with each other at angles other than 0 degrees and 180 degrees with the origin O as the center, and not at an angle of about 90 degrees. May be.
　なお、図３から図５では、ベースプレート８２より下部の構成の図示を省略しているが、かかる構成のステージ装置３４が、ベースプレート８２を介してＸＹステージ３２に搭載されている。 3 to 5, the configuration below the base plate 82 is not shown, but the stage device 34 having such a configuration is mounted on the XY stage 32 via the base plate 82.
　制御装置９０は、ステージ装置３４や上部ステージ２０の制御も含めて、半導体基板貼り合わせ装置１の制御を行う。この制御装置９０による、ステージ装置３４の制御の詳細は後述する。 The control device 90 controls the semiconductor substrate bonding apparatus 1 including the control of the stage device 34 and the upper stage 20. Details of the control of the stage device 34 by the control device 90 will be described later.
　次に、半導体基板貼り合わせ装置１による半導体基板貼り合わせ方法について説明する。 Next, a semiconductor substrate bonding method using the semiconductor substrate bonding apparatus 1 will be described.
　まず、上部ステージ２０の第１の基板保持テーブル２４で貼り合わせの対象である第１の半導体基板Ｗｕを保持し、ＸＹθステージ２２により第１の半導体基板ＷｕのＸＹθ方向の位置決めを行う。次に、下部ステージ３０の第２の基板保持テーブル３６で貼り合わせの対象である第２の半導体基板Ｗｄを保持し、ＸＹステージ３２により第２の半導体基板ＷｄのＸＹ方向の位置決めを行う。次に、θ駆動機構５０により支持テーブル４５を駆動し、中心軸線Ｌ（Ｚ軸）周りの第２の半導体基板Ｗｄの回転位置の位置決めを行う。これらの位置決めは、レーザ干渉計や顕微鏡など、図示しない光学系からの検出信号に基づいて、制御装置９０により自動制御される。 First, the first semiconductor substrate Wu to be bonded is held by the first substrate holding table 24 of the upper stage 20, and the first semiconductor substrate Wu is positioned in the XYθ direction by the XYθ stage 22. Next, the second semiconductor substrate Wd to be bonded is held by the second substrate holding table 36 of the lower stage 30, and the second semiconductor substrate Wd is positioned in the XY direction by the XY stage 32. Next, the support table 45 is driven by the θ drive mechanism 50 to position the rotational position of the second semiconductor substrate Wd around the central axis L (Z axis). These positionings are automatically controlled by the control device 90 based on detection signals from an optical system (not shown) such as a laser interferometer and a microscope.
　この状態から、第２の半導体基板Ｗｄが保持される第２の基板保持テーブル３６の傾斜調整に移る。この傾斜調整におけるステージ装置３４の制御方法について、図８のフローチャートを参照して説明する。 From this state, the process proceeds to the tilt adjustment of the second substrate holding table 36 on which the second semiconductor substrate Wd is held. A control method of the stage device 34 in this tilt adjustment will be described with reference to the flowchart of FIG.
　まず、第２の基板保持テーブル３６に保持された第２の半導体基板Ｗｄを第１の半導体基板Ｗｕに当接させるため、移動機構５２により、支持テーブル４５を所定量、上昇させ、第２の基板保持テーブル３６を第１の基板保持テーブル２４に近づく方向に移動させる（ステップＳ１）。この上昇は、移動機構５２の内部空間５２ｃ内の気圧を第１の気圧から第２の気圧へパイプＰ８６を介して加圧し、そして、一定圧である第２の気圧を維持することによって行われる。そして、この上昇によって第２の基板保持テーブル３６に保持された第２の半導体基板Ｗｄと第１の半導体基板Ｗｕとが当接すると、内部空間５２ｃ内の気圧は、第２の気圧より更に高い圧力である第３の気圧になる。各気圧は圧力計５２ｄで計測され、半導体基板Ｗｕ，Ｗｄに作用した外力として、その気圧情報が制御装置９０へ送られる。なお、上記当接の際、第１の半導体基板Ｗｕは、第２の半導体基板Ｗｄの周縁の一部に接触し、両半導体基板Ｗｕ，Ｗｄが接触した一部以外の部分は、両半導体基板Ｗｕ，Ｗｄにおいて非接触部分となる。 First, in order to bring the second semiconductor substrate Wd held on the second substrate holding table 36 into contact with the first semiconductor substrate Wu, the support table 45 is raised by a predetermined amount by the moving mechanism 52, The substrate holding table 36 is moved in a direction approaching the first substrate holding table 24 (step S1). This rise is performed by pressurizing the air pressure in the internal space 52c of the moving mechanism 52 from the first air pressure to the second air pressure via the pipe P86 and maintaining the second air pressure that is a constant pressure. . When the second semiconductor substrate Wd held on the second substrate holding table 36 and the first semiconductor substrate Wu come into contact with each other due to this rise, the atmospheric pressure in the internal space 52c is higher than the second atmospheric pressure. It becomes the 3rd atmospheric pressure which is a pressure. Each atmospheric pressure is measured by the pressure gauge 52d, and the atmospheric pressure information is sent to the control device 90 as an external force acting on the semiconductor substrates Wu and Wd. At the time of the contact, the first semiconductor substrate Wu is in contact with a part of the periphery of the second semiconductor substrate Wd, and the parts other than the part in which both the semiconductor substrates Wu and Wd are in contact are both semiconductor substrates. It becomes a non-contact part in Wu and Wd.
　次に、上述した支持テーブル４５の上昇に伴う移動機構５２の内部空間５２ｃの気圧変化（差圧）ΔＰｚを制御装置９０で算出し、この差圧が零より大きいか否か判定する（ステップＳ２）。判定の結果、上昇の途中であれば、気圧変化ΔＰＺが第２の気圧同士の差分になるので零となり、ステップＳ１に戻って、移動機構５２による支持テーブル４５の上昇を継続する。一方、両半導体基板が当接していれば、気圧変化ΔＰＺが第３の気圧と第２の気圧の差分になるので零より大きくなり、次のステップＳ３に移る。 Next, the control device 90 calculates the atmospheric pressure change (differential pressure) ΔPz in the internal space 52c of the moving mechanism 52 as the support table 45 is raised, and determines whether or not this differential pressure is greater than zero (step S2). ). Result of the determination, if the middle of the rise, since pressure change [Delta] P Z is the difference between the second pressure becomes zero, the process returns to step S1, and continues to rise in the support table 45 by the moving mechanism 52. On the other hand, if both the semiconductor substrate is in contact, it becomes larger than zero since the pressure change [Delta] P Z is the difference between the third pressure and a second pressure, and proceeds to step S3.
　次に、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとが当接した際の荷重Ｆを制御装置９０で算出する。荷重Ｆは、次の式（１）により表される。
　荷重Ｆ＝ΔＦｚ＝ΔＦＢ＋ΔＦＡｘ＋ΔＦＡｙ・・・（１）
ここで、ΔＦｚは、移動機構５２における反力であり、内部空間５２ｃ内の気圧変化ΔＰＺにピストン５３ａの表面積ＳＡを積算した値である。ΔＦＢは、軸受面４５ｂにおける反力であり、たとえば、軸受面３８ｂと軸受面４５ｂとの間の気圧変化ΔＰＢに、軸受面４５ｂの表面積ＳＢを積算した値である。ΔＦＡＸは、第１駆動機構４６における反力であり、たとえば、内部空間６８ｃ又は７０ｃ内の気圧変化ΔＰＸに、ベローズの作動板６８ｂ又は７０ｂの表面積ＳＣを積算した値である。また、ΔＦＡＹは、第２駆動機構４８における反力であり、たとえば、ベローズアクチュエータ７４，７６の内部空間内の気圧変化ΔＰＹに、ベローズアクチュエータ７４，７６の作動板の表面積ＳＤを積算した値である。なお、荷重Ｆの算出にあたっては、算出精度及び算出の容易性を考慮して、ΔＦｚを用いることが好ましいが、必要に応じて、ΔＦＢとΔＦＡｘとΔＦＡｙとの合計値を用いてもよく、ΔＦＢが無視できるほど小さい場合にあっては、ΔＦＡｘとΔＦＡｙとの合計値を用いてもよい。 Next, the controller 90 calculates the load F when the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact with each other. The load F is represented by the following formula (1).
Load F = ΔF z = ΔF B + ΔF Ax + ΔF Ay (1)
Here, [Delta] F z is the reaction force in the moving mechanism 52, a value obtained by integrating the surface area SA of the piston 53a in the pressure change [Delta] P Z in the internal space 52c. ΔF B is a reaction force on the bearing surface 45b, and is, for example, a value obtained by adding the surface area SB of the bearing surface 45b to the atmospheric pressure change ΔP B between the bearing surface 38b and the bearing surface 45b. [Delta] F AX is a reaction force in the first driving mechanism 46, for example, the atmospheric pressure change [Delta] P X in the interior space 68c or in 70c, which is a value obtained by integrating the surface area SC of the actuating plate 68b or 70b of the bellows. ΔF AY is a reaction force in the second drive mechanism 48. For example, a value obtained by adding the surface area SD of the operating plate of the bellows actuators 74 and 76 to the atmospheric pressure change ΔP Y in the internal space of the bellows actuators 74 and 76. It is. In calculating the load F, it is preferable to use ΔF z in consideration of calculation accuracy and ease of calculation. However, if necessary, the total value of ΔF B , ΔF Ax and ΔF Ay is used. If ΔF B is small enough to be ignored, the total value of ΔF Ax and ΔF Ay may be used.
　そして、この荷重Ｆが、第１の半導体基板Ｗｕ又は第２の半導体基板Ｗｄを破損する可能性のある値を考慮して決められる上限値Ａより小さいか否かを判断する（ステップＳ３）。その結果、荷重Ｆが上限値Ａより大きければ、第１の半導体基板Ｗｕ又は第２の半導体基板Ｗｄが破損してしまうおそれがあるので、ステップＳ４に移り、移動機構５２により支持テーブル４５を所定量、下降させ、第２の基板保持テーブル３６を第１の基板保持テーブル２４から離れる方向に移動させる。一方、荷重Ｆが上限値Ａより小さければ次のステップＳ５に進む。なお、上限値Ａとしては、例えば、１［Ｎ］を設定することが好ましい。 Then, it is determined whether or not the load F is smaller than an upper limit value A determined in consideration of a value that may damage the first semiconductor substrate Wu or the second semiconductor substrate Wd (step S3). As a result, if the load F is larger than the upper limit value A, the first semiconductor substrate Wu or the second semiconductor substrate Wd may be damaged. Therefore, the process proceeds to step S4, where the support table 45 is placed by the moving mechanism 52. The second substrate holding table 36 is moved in a direction away from the first substrate holding table 24 after being fixed and lowered. On the other hand, if the load F is smaller than the upper limit A, the process proceeds to the next step S5. As the upper limit value A, for example, 1 [N] is preferably set.
　ステップＳ５では、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとが当接した接触位置Ｔ（ＸＦ，ＹＦ）を、第１駆動機構４６、第２駆動機構４８及び移動機構５２の位置関係、各駆動機構における反力、並びに半導体基板への荷重に基づいて、次のとおり算出する。なお、接触位置Ｔを算出するにあたり、チルトテーブル３８の平面視において中心を原点ＯとしたＸＹ座標系を設定している。 In step S <b> 5, the contact position T (X F , Y F ) where the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact is determined by the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. Based on the positional relationship, the reaction force in each drive mechanism, and the load on the semiconductor substrate, the following calculation is performed. In calculating the contact position T, an XY coordinate system with the center as the origin O in the plan view of the tilt table 38 is set.
　まず、図９に示すように、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとは、ＸＹ平面内の１点Ｔ（ＸＦ，ＹＦ）で接触し、その接触部に荷重Ｆが加わっているとして、次のようなモーメントの釣り合い式（２）（３）を考える。この接触位置には、すべての荷重Ｆが加わっており、このような接触位置が１つの場合は、この接触位置は重心位置に相当する。なお、接触位置が複数ある場合は、それら複数の接触位置から重心位置を算出して、この重心位置を仮想上の接触位置とし、この仮想上の接触位置を接触位置Ｔ（ＸＦ，ＹＦ））として以下の算出を行う。
　－Ｆ・ＸＦ＋ΔＦＡＸ・ＸＡＹ＝０（Ｙ軸周りのモーメント）・・・（２）
　－Ｆ・ＹＦ＋ΔＦＡＹ・ＹＡＸ＝０（Ｘ軸周りのモーメント）・・・（３） First, as shown in FIG. 9, the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact at one point T (X F , Y F ) in the XY plane, and a load F is applied to the contact portion. Considering the following moment balance equations (2) and (3): All loads F are applied to this contact position. When there is one such contact position, this contact position corresponds to the center of gravity position. When there are a plurality of contact positions, the center of gravity position is calculated from the plurality of contact positions, this center of gravity position is set as a virtual contact position, and this virtual contact position is set as the contact position T (X F , Y F )) As follows.
−F · X F + ΔF AX · X AY = 0 (moment about Y axis) (2)
-F · Y F + ΔF AY · Y AX = 0 (moment about X axis) (3)
　そして、この釣り合い式（２）（３）を、ＸＦ及びＹＦを基準としてまとめると、荷重Ｆが作用している接触位置Ｔ（ＸＦ，ＹＦ）は次のような式として導き出され、各値を算出することが可能となる。
　ＸＦ＝ΔＦＡＸ・ＸＡＹ／Ｆ・・・（４）
　ＹＦ＝ΔＦＡＹ・ＹＡＸ／Ｆ・・・（５） Then, the balance equation (2) (3) are summarized based on the X F and Y F, the contact position T (X F, Y F) that the load F is acting is derived as such the following formula Each value can be calculated.
X F = ΔF AX · X AY / F (4)
Y F = ΔF AY · Y AX / F (5)
　次に、上記で算出された接触位置Ｔ（ＸＦ，ＹＦ）が原点Ｏ上であるか否かを判断する（ステップＳ６）。なお、ステップＳ６における「ＸＦ＝ＹＦ＝０」とは、完全同一だけではなく、位置整定範囲（Ｅ＞０）を設定し、誤差範囲（±Ｅ）内にある実質的に等しい場合も含むものである。その結果、接触位置Ｔ（ＸＦ，ＹＦ）が原点Ｏ上でない場合、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとは平行でない（すなわち両半導体基板Ｗｕ，Ｗｄには非接触部分が存在する）ので、両半導体基板を平行にするため、ステップＳ７、Ｓ８に進む。 Next, it is determined whether or not the contact position T (X F , Y F ) calculated above is on the origin O (step S6). It should be noted that “X F = Y F = 0” in step S6 is not only completely identical, but also a position settling range (E> 0) is set and may be substantially equal within the error range (± E). Is included. As a result, when the contact position T (X F , Y F ) is not on the origin O, the first semiconductor substrate Wu and the second semiconductor substrate Wd are not parallel (that is, a non-contact portion between the two semiconductor substrates Wu, Wd). Therefore, in order to make both semiconductor substrates parallel, the process proceeds to steps S7 and S8.
　ステップＳ７では、第２の半導体基板Ｗｄを第１の半導体基板Ｗｕと平行に調整するためのＸ軸周りの回転角θＸの駆動量（ΔθＡＸ）と、Ｙ軸周りの回転角θＹの駆動量（ΔθＡＹ）を算出する。各駆動量を算出するにあたり、まず、図１０（ａ）（ｂ）のように、第１の半導体基板Ｗｕと第２の半導体基板ＷｄとのＸ軸周りの傾きをΔθＸ、Ｙ軸周りの傾きをΔθＹと仮定する。どちらの傾きも極めて微小であると仮定すると、両者の傾きは次の式により表される。
　ΔθＸ＝Ｚｍａｘ／ＹＦ・・・（６）
　ΔθＹ＝－Ｚｍａｘ／ＸＦ・・・（７）
ここで、Ｚｍａｘとは、半導体基板を貼り合わせる際に通常、発生する半導体基板の傾きにおけるＺ軸方向のずれ量として想定される値の内、最も大きい数値である。 In step S7, the drive amount (Δθ AX ) of the rotation angle θ X around the X axis for adjusting the second semiconductor substrate Wd in parallel with the first semiconductor substrate Wu and the rotation angle θ Y around the Y axis A driving amount (Δθ AY ) is calculated. In calculating each driving amount, first, as shown in FIGS. 10A and 10B, the inclination of the first semiconductor substrate Wu and the second semiconductor substrate Wd around the X axis is expressed by Δθ X and around the Y axis. Assume the slope is Δθ Y. Assuming that both slopes are very small, both slopes are expressed by the following equations.
Δθ X = Z max / Y F (6)
Δθ Y = -Z max / X F (7)
Here, Z max is the largest value among the values assumed as the amount of deviation in the Z-axis direction in the inclination of the semiconductor substrate that is usually generated when the semiconductor substrates are bonded together.
　そして、この傾きと逆向きになるように、Ｘ軸周りの回転駆動量ΔθＡＸ及びＹ軸周りの回転駆動量ΔθＡＹを算出すると、次の式（８）（９）として表される。
　ΔθＡＸ＝－Ｚ／ＹＦ・・・（８）
　ΔθＡＹ＝Ｚ／ＸＦ・・・（９）
ここで、Ｚとは、Ｚｍａｘより小さい値であり、かつ、半導体基板を貼り合わせる際に発生する半導体基板の傾きにおけるＺ方向のずれ量として問題ない範囲の数値であり、例えば、Ｚｍａｘの１０分の１程度の数値である。 When the rotational drive amount Δθ AX around the X axis and the rotational drive amount Δθ AY around the Y axis are calculated so as to be opposite to the inclination, they are expressed as the following equations (8) and (9).
Δθ AX = −Z / Y F (8)
Δθ AY = Z / X F (9)
Here, the Z, a Z max value smaller than, and a number in the range no problem as displacement amount in the Z direction in the tilt of the semiconductor substrate which is generated when bonding the semiconductor substrate, for example, the Z max It is a numerical value about 1/10.
　次に、上記の回転駆動量ΔθＡＸを第２駆動機構４８によって駆動し、Ｘ軸周りの傾斜を調整するとともに、回転駆動量ΔθＡＹを第１駆動機構４６によって駆動し、Ｙ軸周りの傾斜を調整する（ステップＳ８）。これにより、第２の半導体基板が傾動され、第２の半導体基板における、第１の半導体基板と接触した周縁の一部以外の非接触部分が、第１の半導体基板における非接触部分に近接するようになる。第２駆動機構４８が駆動したときすなわちチルトテーブル３８がＸ軸周りに傾動したとき、作動部６０の第１の作動片６０ｃがＸ軸周りに回動する。このとき、第１駆動機構４６の各ベローズアクチュエータ６８，７０の各押圧部６８ｅ，７０ｅが、前記したように、それぞれ作動片６０ｃの上面６０ａ及び下面６０ｂに点接触していることから、第１の作動片６０ｃが回動したとき、各押圧部６８ｅ，７０ｅがそれぞれ第１の作動片６０ｃに面接触する場合に比べて、各押圧部６８ｅ，７０ｅ及び作動片６０ｃの各接触点と第１の作動片６０ｃの回動中心との距離が小さくなる。これにより、第１の作動片６０ｃが回動したとき、各押圧部６８ｅ，７０ｅがそれぞれ第１の作動片６０ｃに面接触する場合に比べて、第１の作動片６０ｃから各押圧部６８ｅ，７０ｅに作用するモーメント力の大きさが小さくなる。従って、各押圧部６８ｅ，７０ｅがそれぞれ前記モーメント力によって該各押圧部間の間隔が大きくなる方向へ移動することを、確実に抑制することができるので、第２駆動機構４８の駆動時に第１駆動機構４６に影響が及ぶことを確実に抑制することができる。他方、第２駆動機構４８のベローズアクチュエータ７４，７６の構成が第１駆動機構４６のベローズアクチュエータ６８，７０と同様の構成を有していることから、第１駆動機構４６の駆動時に第２駆動機構４８に影響が及ぶことも確実に抑制することができる。第１駆動機構４６及び第２駆動機構４８のそれぞれの駆動によってＸ軸周り及びＹ軸周りのチルトテーブル３８の傾斜を調整した後、ステップＳ２に戻る。 Next, the rotational drive amount Δθ AX is driven by the second drive mechanism 48 to adjust the tilt around the X axis, and the rotational drive amount Δθ AY is driven by the first drive mechanism 46 to tilt around the Y axis. Is adjusted (step S8). As a result, the second semiconductor substrate is tilted, and a non-contact portion of the second semiconductor substrate other than a part of the peripheral edge in contact with the first semiconductor substrate approaches the non-contact portion of the first semiconductor substrate. It becomes like this. When the second drive mechanism 48 is driven, that is, when the tilt table 38 tilts around the X axis, the first operating piece 60c of the operating unit 60 rotates around the X axis. At this time, the pressing portions 68e and 70e of the bellows actuators 68 and 70 of the first drive mechanism 46 are in point contact with the upper surface 60a and the lower surface 60b of the operating piece 60c, respectively, as described above. When the operating piece 60c is rotated, the contact points of the pressing portions 68e and 70e and the operating piece 60c and the first contact points are compared with the case where the pressing portions 68e and 70e are in surface contact with the first operating piece 60c, respectively. The distance from the rotation center of the operating piece 60c becomes smaller. Thereby, when the 1st action piece 60c rotates, compared with the case where each press part 68e and 70e surface-contacts with the 1st action piece 60c, respectively, each press part 68e, The magnitude of the moment force acting on 70e is reduced. Accordingly, each of the pressing portions 68e and 70e can be reliably suppressed from moving in the direction in which the interval between the pressing portions is increased by the moment force. Therefore, the first driving mechanism 48 is driven when the second driving mechanism 48 is driven. The influence on the drive mechanism 46 can be reliably suppressed. On the other hand, since the configuration of the bellows actuators 74 and 76 of the second drive mechanism 48 is the same as that of the bellows actuators 68 and 70 of the first drive mechanism 46, the second drive is performed when the first drive mechanism 46 is driven. The influence on the mechanism 48 can also be reliably suppressed. After the tilt of the tilt table 38 around the X axis and the Y axis is adjusted by driving the first drive mechanism 46 and the second drive mechanism 48, the process returns to step S2.
　そして、再度、ステップＳ３、ステップＳ５、ステップＳ６と進み、ステップＳ６でＸＦ＝ＹＦ＝０となるまで、つまり、第１及び第２の半導体基板が互いに平行になるまで、駆動量を算出するステップＳ７、算出された駆動量に基づき駆動機構を駆動させるステップＳ８、ステップＳ２，ステップＳ３、半導体基板の接触位置を算出するステップＳ５、及びステップＳ６を繰り返し行う。このような制御により、第１駆動機構４６、第２駆動機構４８及び移動機構５２に生じる各反力に基づいて、第２の半導体基板Ｗｄが第１の半導体基板Ｗｕに対して徐々に平行になるようにしている。つまり、各反力に基づいて、重心位置に相当する接触位置を算出し、この接触位置によって両半導体基板が平行であるか否かを算出し、接触位置が原点に近づくようにしている。 Then, the process proceeds to step S3, step S5, and step S6 again, and the drive amount is calculated until X F = Y F = 0 in step S6, that is, until the first and second semiconductor substrates are parallel to each other. Step S7, Step S8 for driving the drive mechanism based on the calculated drive amount, Step S2, Step S3, Step S5 for calculating the contact position of the semiconductor substrate, and Step S6 are repeated. Through such control, the second semiconductor substrate Wd is gradually parallel to the first semiconductor substrate Wu based on the reaction forces generated in the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. It is trying to become. That is, based on each reaction force, a contact position corresponding to the position of the center of gravity is calculated, and based on this contact position, it is calculated whether or not both semiconductor substrates are parallel, so that the contact position approaches the origin.
　そして、ステップＳ６の判定において、接触位置（ＸＦ，ＹＦ）が原点Ｏ上であれば、両半導体基板は平行であり、ステップＳ９に進む。そして、荷重Ｆが、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとが貼り合わせされるのに十分な値を考慮して定められた下限値Ｂより大きいか否かを判断する（ステップＳ９）。下限値Ｂとしては、例えば、０．５［Ｎ］を設定することが好ましい。荷重Ｆが下限値Ｂより小さければ、ステップＳ１に戻る。一方、荷重Ｆが下限値Ｂより大きければ、この状態で貼り合わせを継続し、所定時間経過後、貼り合わせ加工を完了させる。 If it is determined in step S6 that the contact position (X F , Y F ) is on the origin O, both semiconductor substrates are parallel, and the process proceeds to step S9. Then, it is determined whether or not the load F is larger than a lower limit B determined in consideration of a value sufficient for bonding the first semiconductor substrate Wu and the second semiconductor substrate Wd (step). S9). For example, 0.5 [N] is preferably set as the lower limit value B. If the load F is smaller than the lower limit B, the process returns to step S1. On the other hand, if the load F is larger than the lower limit B, the bonding is continued in this state, and the bonding process is completed after a predetermined time has elapsed.
　以上詳述したように、本実施形態に係る半導体基板貼り合わせ装置１の制御装置９０は、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとが互いに当接した際、第１駆動機構４６、第２駆動機構４８、及び移動機構５２に生じる各反力を算出し、この各反力から算出した駆動量に基づき、第１及び第２駆動機構４６，４８を繰り返し駆動して、第１の半導体基板Ｗｕに対する第２の半導体基板Ｗｄの平行度が等しくなるように第２の基板保持テーブル３６の傾斜を調整することができる。 As described above in detail, when the first semiconductor substrate Wu and the second semiconductor substrate Wd are in contact with each other, the control device 90 of the semiconductor substrate bonding apparatus 1 according to the present embodiment has the first drive mechanism 46. The reaction forces generated in the second drive mechanism 48 and the moving mechanism 52 are calculated, and the first and second drive mechanisms 46 and 48 are repeatedly driven based on the drive amounts calculated from the reaction forces. The inclination of the second substrate holding table 36 can be adjusted so that the parallelism of the second semiconductor substrate Wd with respect to the semiconductor substrate Wu becomes equal.
　また、制御装置９０は、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとの接触位置に作用する荷重Ｆと、第１駆動機構４６及び第２駆動機構４８に生じる各反力と、第１駆動機構４６のＸ軸上の位置と第２駆動機構４８のＹ軸上の位置とに基づき、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとの接触位置を算出し、接触位置が原点上でない場合、この接触位置を利用して、第２の半導体基板Ｗｄが第１の半導体基板Ｗｕと平行になるように、第１及び第２駆動機構４６，４８を繰り返し駆動するようになっている。これにより、制御装置９０による、傾斜調整のための第１及び第２駆動機構４６，４８の制御が容易になる。 The control device 90 also includes a load F acting on a contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd, each reaction force generated in the first drive mechanism 46 and the second drive mechanism 48, Based on the position on the X-axis of the first drive mechanism 46 and the position on the Y-axis of the second drive mechanism 48, the contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd is calculated. When not on the origin, the first and second drive mechanisms 46 and 48 are repeatedly driven using the contact position so that the second semiconductor substrate Wd is parallel to the first semiconductor substrate Wu. ing. Thereby, control of the 1st and 2nd drive mechanisms 46 and 48 for inclination adjustment by control device 90 becomes easy.
　また、制御装置９０は、第１の半導体基板Ｗｕから第２の半導体基板Ｗｄに作用する荷重が上限値を超える場合、チルトテーブル３８を下降させて第２の基板保持テーブル３６が第１の基板保持テーブル２４から離れる方向に移動するように、移動機構５２を駆動させるようになっている。このため、貼り合わせされる半導体基板同士に過度の力が加わって半導体基板が破損してしまうことを防止できる。 In addition, when the load acting on the second semiconductor substrate Wd from the first semiconductor substrate Wu exceeds the upper limit value, the control device 90 lowers the tilt table 38 and causes the second substrate holding table 36 to move to the first substrate. The moving mechanism 52 is driven so as to move in a direction away from the holding table 24. For this reason, it is possible to prevent the semiconductor substrates from being damaged by applying an excessive force between the semiconductor substrates to be bonded to each other.
　また、制御装置９０は、半導体基板への荷重が下限値を超えていない場合、チルトテーブル３８を上昇させて第２の基板保持テーブル３６が第１の基板保持テーブル２４に近づく方向に移動するように、移動機構５２を駆動させるようになっている。このため、不十分な力での半導体基板の貼り合わせを避けることができる。 Further, when the load on the semiconductor substrate does not exceed the lower limit value, the control device 90 raises the tilt table 38 so that the second substrate holding table 36 moves in a direction approaching the first substrate holding table 24. Further, the moving mechanism 52 is driven. For this reason, bonding of the semiconductor substrates with an insufficient force can be avoided.
　また、ステージ装置３４は、第１駆動機構４６、第２駆動機構４８、及び移動機構５２が流体圧、例えば、空気圧を利用した駆動機構であり、この流体圧の変化に基づいて反力を制御装置９０で算出するようになっている。このため、微小な変化が検出しやすい流体圧の変化に基づいて微妙な傾斜を検出でき、高度な傾斜調整を行うことができる。 The stage device 34 is a drive mechanism in which the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 utilize fluid pressure, for example, air pressure, and controls the reaction force based on the change in the fluid pressure. The calculation is performed by the device 90. For this reason, it is possible to detect a subtle inclination based on a change in fluid pressure at which a minute change is easy to detect, and to perform advanced inclination adjustment.
　また、第２の基板保持テーブル３６を第１及び第２駆動機構４６，４８で各軸回りに傾動させるための二つの軸は、第２の基板保持テーブル３６の平面視における保持中心である原点を通り且つ原点を中心として０度及び１８０度を除く角度、例えば略９０度で互いに交差している。このため、第２の基板保持テーブルを各軸回りに傾動させるための第１及び第２駆動機構４６，４８がそれぞれ独立して作動することができ、第２の基板保持テーブル３６（つまり第２の半導体基板Ｗｄ）を水平面に対して様々な傾斜角度へ傾斜させることができる。しかも、このような第２の半導体基板Ｗｄの三次元的な傾斜角度調整を簡単な構造で実現させることが可能となる。 Further, the two axes for tilting the second substrate holding table 36 around the respective axes by the first and second drive mechanisms 46 and 48 are origins which are the holding centers in the plan view of the second substrate holding table 36. And intersecting each other at an angle excluding 0 degrees and 180 degrees, for example, approximately 90 degrees, centering on the origin. Therefore, the first and second drive mechanisms 46 and 48 for tilting the second substrate holding table about each axis can operate independently, and the second substrate holding table 36 (that is, the second substrate holding table 36) The semiconductor substrate Wd) can be inclined at various inclination angles with respect to the horizontal plane. Moreover, such a three-dimensional tilt angle adjustment of the second semiconductor substrate Wd can be realized with a simple structure.
　なお、本発明は上記した実施形態に限定されることなく、種々の変形が可能である。例えば、上記実施形態では、第１駆動機構４６、第２駆動機構４８及び移動機構５２で生じる各反力に基づいて、第１の半導体基板Ｗｕと第２の半導体基板Ｗｄとの接触位置を算出していたが、この接触位置を算出できるようであれば、反力以外の力成分を用いて接触位置を算出してもよい。また、上記実施形態では、第２の半導体基板Ｗｄに作用する荷重を算出して接触位置を算出していたが、上部ステージ２０側に第１の半導体基板Ｗｕに作用する外力を検出する検出部を設け、第１の半導体基板Ｗｕに作用する荷重を算出して接触位置を算出するようにしてもよい。 Note that the present invention is not limited to the above-described embodiment, and various modifications are possible. For example, in the above embodiment, the contact position between the first semiconductor substrate Wu and the second semiconductor substrate Wd is calculated based on the reaction forces generated by the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52. However, if this contact position can be calculated, the contact position may be calculated using a force component other than the reaction force. In the above embodiment, the load acting on the second semiconductor substrate Wd is calculated to calculate the contact position. However, the detecting unit detects an external force acting on the first semiconductor substrate Wu on the upper stage 20 side. And the contact position may be calculated by calculating a load acting on the first semiconductor substrate Wu.
　また、上記実施形態では、移動機構５２に対する反力を算出するにあたり、図５に示すように、圧力計５２ｄをパイプＰ８６に設ける構成としたが、移動機構５２に対する反力が算出できれば、他の部分に圧力計５２ｄを設ける構成としてもよい。また、第１駆動機構４６及び第２駆動機構４８に対する反力を算出するにあたり、図６等に示すように、圧力計をパイプＰ６８，Ｐ７０等に設ける構成としたが、第１駆動機構４６及び第２駆動機構４８に対する反力が算出できれば、他の部分に圧力計を設ける構成としてもよい。 In the above embodiment, the pressure gauge 52d is provided on the pipe P86 as shown in FIG. 5 in calculating the reaction force against the moving mechanism 52. However, if the reaction force against the moving mechanism 52 can be calculated, It is good also as a structure which provides the pressure gauge 52d in a part. Further, in calculating the reaction force against the first drive mechanism 46 and the second drive mechanism 48, as shown in FIG. 6 and the like, the pressure gauges are provided in the pipes P68, P70, etc., but the first drive mechanism 46 and As long as the reaction force with respect to the second drive mechanism 48 can be calculated, a configuration may be adopted in which a pressure gauge is provided in another portion.
　また、上記実施形態では、第１駆動機構４６、第２駆動機構４８、及び移動機構５２は空気圧を使った駆動機構とし、空気圧の変動により反力を検出する構成としたが、これらを油圧など他の流体を使った駆動機構とし、その流体圧の変動により反力を検出する構成としてもよい。 In the above-described embodiment, the first drive mechanism 46, the second drive mechanism 48, and the moving mechanism 52 are configured to detect the reaction force based on the fluctuation of the air pressure. A driving mechanism using another fluid may be used, and the reaction force may be detected by the fluctuation of the fluid pressure.
　また、上記実施形態では、下部ステージ３０に保持される第２の半導体基板Ｗｄを上昇させて上部ステージ２０に保持される第１の半導体基板Ｗｕに当接させていたが、上部ステージ２０に別の移動機構を設けて上部ステージ２０に保持される第１の半導体基板Ｗｕを下降させて下部ステージ３０に保持される第２の半導体基板Ｗｄに当接させるようにしてもよい。この場合でも、反力に基づく高度な傾斜調整が可能である。 In the above embodiment, the second semiconductor substrate Wd held on the lower stage 30 is raised and brought into contact with the first semiconductor substrate Wu held on the upper stage 20. The first semiconductor substrate Wu held on the upper stage 20 may be lowered and brought into contact with the second semiconductor substrate Wd held on the lower stage 30. Even in this case, advanced tilt adjustment based on the reaction force is possible.
　また、上記実施形態において、チルトテーブル３８の側面３８ｃの作動部６０が設けられた位置と反対側の位置に、該作動部の重量と等しい重量を有する錘を設け、側面３８ｃの作動部６２が設けられた位置の反対側の位置に、該作動部の重量と等しい重量を有する錘を設けることができる。この場合、チルトテーブル３８のＸ軸方向及びＹ軸方向の重さのつり合いが保たれる。これにより、第１駆動機構４６の各ベローズアクチュエータ６８，７０の各ベローズ６８ａ、７０ａ及び第２駆動機構４８の各ベローズアクチュエータ７４，７６の各ベローズがそれぞれ無負荷な状態におかれたとき、チルトテーブル３８がいずれかの方向に傾くことなく、チルトテーブル３８の姿勢を、該チルトテーブルの載置面３８ａが水平になる姿勢に保持することができる。従って、例えば各ベローズアクチュエータ６８，７０，７４，７６への空気の供給量を調整することによりチルトテーブル３８の傾きを調節する場合に比べて、チルトテーブル３８の姿勢を前記初期姿勢に容易に戻すことができる。 In the above embodiment, a weight having a weight equal to the weight of the operating portion is provided at a position opposite to the position where the operating portion 60 of the side surface 38c of the tilt table 38 is provided, and the operating portion 62 of the side surface 38c is provided. A weight having a weight equal to the weight of the operating portion can be provided at a position opposite to the provided position. In this case, the balance of the weight of the tilt table 38 in the X-axis direction and the Y-axis direction is maintained. As a result, when the bellows 68a and 70a of the bellows actuators 68 and 70 of the first drive mechanism 46 and the bellows of the bellows actuators 74 and 76 of the second drive mechanism 48 are left unloaded, the tilt Without tilting the table 38 in any direction, the tilt table 38 can be held in a posture where the mounting surface 38a of the tilt table is horizontal. Therefore, for example, compared with the case where the tilt of the tilt table 38 is adjusted by adjusting the amount of air supplied to the bellows actuators 68, 70, 74, 76, the posture of the tilt table 38 is easily returned to the initial posture. be able to.

Claims (15)

  1. 　第１及び第２の半導体基板を互いに貼り合わせるための半導体基板貼り合わせ装置であって、
    　前記第２の半導体基板を傾動させるための駆動部と、
    　前記駆動部の作動を制御する制御部とを備え、
    　前記制御部は、前記第１及び第２の半導体基板が一部で互いに接触した際、前記第１及び第２の半導体基板のうち少なくとも一方の半導体基板に作用する荷重を算出し、前記荷重に応じて、前記第１及び第２の半導体基板における前記一部以外の非接触部分が互いに近接するように前記駆動部の作動制御を行い、前記第１及び第２の半導体基板が互いに平行になるまで前記作動制御を繰り返し実行することを特徴とする半導体基板貼り合わせ装置。     A semiconductor substrate bonding apparatus for bonding first and second semiconductor substrates together,
    A drive unit for tilting the second semiconductor substrate;
    A control unit for controlling the operation of the drive unit,
    The controller calculates a load acting on at least one of the first and second semiconductor substrates when the first and second semiconductor substrates partially contact each other, and calculates the load Accordingly, the operation of the driving unit is controlled so that non-contact parts other than the part of the first and second semiconductor substrates are close to each other, and the first and second semiconductor substrates are parallel to each other. The semiconductor substrate laminating apparatus, wherein the operation control is repeatedly executed.
  2. 　前記第１及び第２の半導体基板が互いに接触する前記一部は、前記第１及び前記第２の半導体基板のうち少なくとも一方の半導体基板において、周縁の一部であることを特徴とする請求項１に記載の半導体基板貼り合わせ装置。 The part of the first and second semiconductor substrates in contact with each other is a part of the periphery of at least one of the first and second semiconductor substrates. 2. The semiconductor substrate bonding apparatus according to 1.
  3. 　前記第１の半導体基板を保持するための第１の基板保持テーブルと、
    　前記第２の半導体基板を前記第１の半導体基板に対向するように保持するための第２の基板保持テーブルとを備え、
    　前記駆動部は、
    　前記第２の基板保持テーブルの平面視において互いに交差する二つの軸のうち一方の軸の周りに前記第２の基板保持テーブルを傾動させるための第１駆動機構と、
    　前記一方の軸とは異なる他方の軸の周りに前記第２の基板保持テーブルを傾動させるための第２駆動機構とを有し、
    　前記制御部は、前記第１の基板保持テーブルに保持された前記第１の半導体基板が前記第２の基板保持テーブルに保持された前記第２の半導体基板の周縁の一部に接触した際、前記第２の半導体基板から前記第２の基板保持テーブルに作用する力の前記一方の軸周りの力成分と前記他方の軸周りの力成分とを前記第２の半導体基板に作用する前記荷重として算出し、該各力成分に基づいて前記第１駆動機構及び前記第２駆動機構を駆動する前記作動制御を繰り返し実行することを特徴とする請求項２に記載の半導体基板貼り合わせ装置。     A first substrate holding table for holding the first semiconductor substrate;
    A second substrate holding table for holding the second semiconductor substrate so as to face the first semiconductor substrate;
    The drive unit is
    A first drive mechanism for tilting the second substrate holding table around one of two axes intersecting each other in plan view of the second substrate holding table;
    A second drive mechanism for tilting the second substrate holding table around the other axis different from the one axis;
    When the first semiconductor substrate held on the first substrate holding table comes into contact with a part of the periphery of the second semiconductor substrate held on the second substrate holding table, The force component around the one axis and the force component around the other axis of the force acting on the second substrate holding table from the second semiconductor substrate are used as the load acting on the second semiconductor substrate. 3. The semiconductor substrate bonding apparatus according to claim 2, wherein the operation control for calculating and driving the first drive mechanism and the second drive mechanism based on the force components is repeatedly executed.
  4. 　前記二つの軸は、前記第２の基板保持テーブルの平面視における保持中心である原点を通り且つ前記原点を中心として０度及び１８０度を除く角度で互いに交差していることを特徴とする請求項３に記載の半導体基板貼り合わせ装置。 The two axes pass through an origin which is a holding center in a plan view of the second substrate holding table, and intersect each other at angles other than 0 degrees and 180 degrees around the origin. Item 4. A semiconductor substrate bonding apparatus according to Item 3.
  5. 　前記二つの軸は、前記第２の基板保持テーブルの平面視における保持中心である原点を通り且つ前記原点を中心として互いに直交しており、
    　前記制御部は、前記各力成分に基づいて、前記第２の半導体基板に対して前記第１の半導体基板から作用する力の重心位置を算出し、該重心位置が前記原点上でない場合、前記重心位置を利用して、前記第１駆動機構及び前記第２駆動機構の駆動量を算出することを特徴とする請求項３又は４に記載の半導体基板貼り合わせ装置。     The two axes pass through an origin that is a holding center in plan view of the second substrate holding table and are orthogonal to each other with the origin as a center,
    The control unit calculates a gravity center position of a force acting on the second semiconductor substrate from the first semiconductor substrate based on the force components, and when the gravity center position is not on the origin, 5. The semiconductor substrate bonding apparatus according to claim 3, wherein a driving amount of the first driving mechanism and the second driving mechanism is calculated using a position of the center of gravity.
  6. 　前記第１駆動機構は、前記他方の軸上で前記第２の基板保持テーブルを傾動させるものであり、前記第２駆動機構は、前記一方の軸上で前記第２の基板保持テーブルを傾動させるものであり、
    　前記制御部は、前記第１の半導体基板と前記第２の半導体基板とが互いに当接した際、前記第１駆動機構及び前記第２駆動機構に生じる各反力をそれぞれ前記各力成分として算出することを特徴とする請求項３乃至５のいずれか一項に記載の半導体基板貼り合わせ装置。     The first driving mechanism tilts the second substrate holding table on the other axis, and the second driving mechanism tilts the second substrate holding table on the one axis. Is,
    The control unit calculates each reaction force generated in the first drive mechanism and the second drive mechanism as each force component when the first semiconductor substrate and the second semiconductor substrate contact each other. The semiconductor substrate bonding apparatus according to claim 3, wherein the bonding apparatus is a semiconductor substrate bonding apparatus.
  7. 　前記第１駆動機構及び前記第２駆動機構は流体圧を利用した駆動機構であって、
    　前記制御部は、前記流体圧の変化に基づいて前記各反力を算出することを特徴とする請求項６に記載の半導体基板貼り合わせ装置。     The first drive mechanism and the second drive mechanism are drive mechanisms using fluid pressure,
    The semiconductor substrate bonding apparatus according to claim 6, wherein the control unit calculates each reaction force based on a change in the fluid pressure.
  8. 　前記第１の基板保持テーブルと前記第２の基板保持テーブルとを相対的に近づく方向及び離れる方向へ移動させるための移動機構を更に備え、
    　前記制御部は、前記第１の半導体基板と前記第２の半導体基板とが互いに当接した際、前記移動機構に生じる力成分を算出し、該力成分と前記第２の基板保持テーブルに作用する前記各力成分と前記第１駆動機構及び前記第２駆動機構による前記第２の基板保持テーブルを傾動させる位置とに基づいて、前記重心位置を算出することを特徴とする請求項５乃至７のいずれか一項に記載の半導体基板貼り合わせ装置。     A moving mechanism for moving the first substrate holding table and the second substrate holding table in a relatively approaching direction and a separating direction;
    The controller calculates a force component generated in the moving mechanism when the first semiconductor substrate and the second semiconductor substrate contact each other, and acts on the force component and the second substrate holding table. The gravity center position is calculated on the basis of each of the force components to be performed and a position at which the second substrate holding table is tilted by the first drive mechanism and the second drive mechanism. The semiconductor substrate bonding apparatus as described in any one of these.
  9. 　前記制御部は、前記第１の半導体基板と前記第２の半導体基板とが互いに当接した際、前記移動機構に生じる反力を前記力成分として算出することを特徴とする請求項８に記載の半導体基板貼り合わせ装置。 9. The control unit according to claim 8, wherein the control unit calculates a reaction force generated in the moving mechanism as the force component when the first semiconductor substrate and the second semiconductor substrate are in contact with each other. Semiconductor substrate bonding apparatus.
  10. 　前記移動機構は流体圧を利用した駆動機構であって、
    　前記制御部は、前記流体圧の変化に基づいて前記移動機構に生じる前記反力を算出することを特徴とする請求項９に記載の半導体基板貼り合わせ装置。     The moving mechanism is a driving mechanism using fluid pressure,
    The semiconductor substrate bonding apparatus according to claim 9, wherein the control unit calculates the reaction force generated in the moving mechanism based on a change in the fluid pressure.
  11. 　前記制御部は、前記第１の半導体基板から前記第２の半導体基板に作用する荷重が上限値を超える場合、前記第１の基板保持テーブルと前記第２の基板保持テーブルとが相対的に離れる方向に移動するように前記移動機構を駆動することを特徴とする請求項８乃至１０のいずれか一項に記載の半導体基板貼り合わせ装置。 When the load acting on the second semiconductor substrate from the first semiconductor substrate exceeds an upper limit value, the control unit relatively separates the first substrate holding table and the second substrate holding table. The semiconductor substrate bonding apparatus according to claim 8, wherein the moving mechanism is driven so as to move in a direction.
  12. 　前記制御部は、前記重心位置が前記原点上である場合であって、且つ、前記第２の半導体基板への荷重が下限値を超えていない場合、前記第１の基板保持テーブルと前記第２の基板保持テーブルとが相対的に近づく方向に移動するように前記移動機構を駆動することを特徴とする請求項８乃至１１のいずれか一項に記載の半導体基板貼り合わせ装置。 In the case where the position of the center of gravity is on the origin, and the load on the second semiconductor substrate does not exceed a lower limit value, the control unit is configured so that the first substrate holding table and the second substrate The semiconductor substrate bonding apparatus according to claim 8, wherein the moving mechanism is driven so as to move in a direction relatively approaching the substrate holding table.
  13. 　前記第１駆動機構及び前記第２駆動機構は、それぞれ前記第２の基板保持テーブルを傾動させるべく押圧力を作用させるために該第２の基板保持テーブルに当接する押圧部を有し、該各押圧部は、それぞれ前記第２の基板保持テーブルへ向けて突出する半球状をなしていることを特徴とする請求項３乃至１２のいずれか一項に記載の半導体基板貼り合わせ装置。 Each of the first drive mechanism and the second drive mechanism has a pressing portion that comes into contact with the second substrate holding table in order to apply a pressing force to tilt the second substrate holding table. The semiconductor substrate bonding apparatus according to any one of claims 3 to 12, wherein each of the pressing portions has a hemispherical shape protruding toward the second substrate holding table.
  14. 　第１及び第２の半導体基板を互いに貼り合わせるための半導体基板貼り合わせ方法であって、
    　前記第１及び第２の半導体基板が一部で互いに接触した際、前記第１及び第２の半導体基板のうち少なくとも一方の半導体基板に作用する荷重を算出する算出工程と、
    　前記算出工程で算出された前記荷重に応じて、前記第１及び第２の半導体基板における前記一部以外の非接触部分が互いに近接するように、前記第２の半導体基板を傾動させる傾動工程と、
    　前記第１及び第２の半導体基板が互いに平行になるまで前記算出工程及び前記傾動工程を繰り返し実行する繰返工程と、
    を含むことを特徴とする半導体基板貼り合わせ方法。     A semiconductor substrate bonding method for bonding first and second semiconductor substrates together,
    A calculation step of calculating a load acting on at least one of the first and second semiconductor substrates when the first and second semiconductor substrates partially contact each other;
    A tilting step of tilting the second semiconductor substrate so that non-contact portions other than the portions of the first and second semiconductor substrates are close to each other according to the load calculated in the calculating step; ,
    A repeating step of repeatedly executing the calculating step and the tilting step until the first and second semiconductor substrates are parallel to each other;
    A method for laminating a semiconductor substrate, comprising:
  15. 　前記算出工程では、前記第１の半導体基板が前記第２の半導体基板の周縁の一部に接触した際、前記第２の半導体基板の平面視において互いに交差する二つの軸のうち一方の軸の周りの力成分と前記一方の軸とは異なる他方の軸周りの力成分とを前記第２の半導体基板に作用する前記荷重として算出し、
    　前記傾動工程では、前記各力成分に基づいて、前記第２の半導体基板の前記周縁の一部以外の前記非接触部分が、前記第１の半導体基板における前記非接触部分に近接するように前記第２の半導体基板を傾動させることを特徴とする請求項１４に記載の半導体基板貼り合わせ方法。     In the calculating step, when the first semiconductor substrate contacts a part of the periphery of the second semiconductor substrate, one of the two axes intersecting each other in plan view of the second semiconductor substrate. A force component around the other axis different from the one axis is calculated as the load acting on the second semiconductor substrate,
    In the tilting step, based on the force components, the non-contact portion other than a part of the peripheral edge of the second semiconductor substrate is close to the non-contact portion of the first semiconductor substrate. The semiconductor substrate bonding method according to claim 14, wherein the second semiconductor substrate is tilted.
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