WO2009057422A1 - 銅アノード又は含燐銅アノード、半導体ウエハへの電気銅めっき方法及びパーティクル付着の少ない半導体ウエハ - Google Patents

銅アノード又は含燐銅アノード、半導体ウエハへの電気銅めっき方法及びパーティクル付着の少ない半導体ウエハ Download PDF

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Publication number
WO2009057422A1
WO2009057422A1 PCT/JP2008/068167 JP2008068167W WO2009057422A1 WO 2009057422 A1 WO2009057422 A1 WO 2009057422A1 JP 2008068167 W JP2008068167 W JP 2008068167W WO 2009057422 A1 WO2009057422 A1 WO 2009057422A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
copper
phosphorus
copper anode
anode
Prior art date
Application number
PCT/JP2008/068167
Other languages
English (en)
French (fr)
Inventor
Akihiro Aiba
Hirofumi Takahashi
Original Assignee
Nippon Mining & Metals Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to EP08843371.9A priority Critical patent/EP2213772B1/en
Priority to KR1020097015831A priority patent/KR101945043B1/ko
Priority to CN200880005572.1A priority patent/CN101796224B/zh
Priority to US12/524,623 priority patent/US8216438B2/en
Priority to JP2009538986A priority patent/JP5066577B2/ja
Publication of WO2009057422A1 publication Critical patent/WO2009057422A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　半導体ウエハへの電気銅めっきに使用する銅アノード又は含燐銅アノードであって、銅アノード又は燐を除く含燐銅アノードの純度が９９．９９ｗｔ％以上であり、不純物であるシリコンの含有量が１０ｗｔｐｐｍ以下であることを特徴とする半導体ウエハへの電気銅めっきに使用する銅アノード又は含燐銅アノード。電気銅めっきの際に、被めっき物、特に半導体ウエハへのパーティクルの付着を効率良く防止できる電気銅めっき方法、電気銅めっき用含燐銅アノード及びこれらを用いて電気銅めっきされたパーティクル付着の少ない銅層を備えた半導体ウエハを提供する。
PCT/JP2008/068167 2007-11-01 2008-10-06 銅アノード又は含燐銅アノード、半導体ウエハへの電気銅めっき方法及びパーティクル付着の少ない半導体ウエハ WO2009057422A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08843371.9A EP2213772B1 (en) 2007-11-01 2008-10-06 Phosphorus-containing copper anode
KR1020097015831A KR101945043B1 (ko) 2007-11-01 2008-10-06 구리 애노드 또는 인 함유 구리 애노드, 반도체 웨이퍼에 대한 전기 구리 도금 방법 및 파티클 부착이 적은 반도체 웨이퍼
CN200880005572.1A CN101796224B (zh) 2007-11-01 2008-10-06 铜阳极或含磷铜阳极、在半导体晶片上电镀铜的方法及粒子附着少的半导体晶片
US12/524,623 US8216438B2 (en) 2007-11-01 2008-10-06 Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion
JP2009538986A JP5066577B2 (ja) 2007-11-01 2008-10-06 銅アノード又は含燐銅アノード、半導体ウエハへの電気銅めっき方法及びパーティクル付着の少ない半導体ウエハ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285148 2007-11-01
JP2007-285148 2007-11-01

Publications (1)

Publication Number Publication Date
WO2009057422A1 true WO2009057422A1 (ja) 2009-05-07

Family

ID=40590817

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068167 WO2009057422A1 (ja) 2007-11-01 2008-10-06 銅アノード又は含燐銅アノード、半導体ウエハへの電気銅めっき方法及びパーティクル付着の少ない半導体ウエハ

Country Status (7)

Country Link
US (1) US8216438B2 (ja)
EP (1) EP2213772B1 (ja)
JP (2) JP5066577B2 (ja)
KR (1) KR101945043B1 (ja)
CN (3) CN101796224B (ja)
TW (1) TWI492279B (ja)
WO (1) WO2009057422A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4011336B2 (ja) * 2001-12-07 2007-11-21 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP5376168B2 (ja) * 2010-03-30 2013-12-25 三菱マテリアル株式会社 電気銅めっき用高純度銅アノード、その製造方法および電気銅めっき方法
TWI588900B (zh) * 2012-04-25 2017-06-21 Markus Hacksteiner Device and method for wafer metallization
CN105586630A (zh) * 2015-12-23 2016-05-18 南通富士通微电子股份有限公司 半导体封装中提升铜磷阳极黑膜品质的方法
WO2019070783A1 (en) 2017-10-06 2019-04-11 Corning Incorporated ASSEMBLY COMPRISING A NANOPOROUS SURFACE LAYER WITH A HYDROPHOBIC LAYER
JP6960363B2 (ja) 2018-03-28 2021-11-05 Ｊｘ金属株式会社 Ｃｏアノード、Ｃｏアノードを用いた電気Ｃｏめっき方法及びＣｏアノードの評価方法
CN110528042B (zh) * 2019-08-28 2021-02-09 深圳赛意法微电子有限公司 一种半导体器件电镀方法及用于电镀的活化槽

Citations (8)

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JPH03180468A (ja) 1989-12-08 1991-08-06 Matsushita Electric Ind Co Ltd スパッタ用ターゲットの製造方法
JP2000265262A (ja) 1999-03-16 2000-09-26 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリング用ターゲット材の製造方法
JP2001098366A (ja) 1999-07-26 2001-04-10 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001123266A (ja) 1999-10-21 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001240949A (ja) * 2000-02-29 2001-09-04 Mitsubishi Materials Corp 微細な結晶粒を有する高純度銅加工品素材の製造方法
JP2002275698A (ja) * 2001-03-13 2002-09-25 Mitsubishi Materials Corp 電気メッキ用含燐銅陽極
JP2003171797A (ja) * 2001-12-07 2003-06-20 Nikko Materials Co Ltd 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP2003231995A (ja) * 2002-02-13 2003-08-19 Nikko Materials Co Ltd 電気銅めっき用含リン銅アノード、該含リン銅アノードを使用する電気銅めっき方法、これらを用いてめっきされたパーティクル付着の少ない半導体ウエハ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821407B1 (en) * 2000-05-10 2004-11-23 Novellus Systems, Inc. Anode and anode chamber for copper electroplating
JP4076751B2 (ja) * 2001-10-22 2008-04-16 日鉱金属株式会社 電気銅めっき方法、電気銅めっき用含リン銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
CN100350079C (zh) * 2001-11-16 2007-11-21 霍尼韦尔国际公司 用于电镀操作的阳极以及在半导体基体上形成材料的方法
JP4034095B2 (ja) * 2002-03-18 2008-01-16 日鉱金属株式会社 電気銅めっき方法及び電気銅めっき用含リン銅アノード
US20030188975A1 (en) * 2002-04-05 2003-10-09 Nielsen Thomas D. Copper anode for semiconductor interconnects

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03180468A (ja) 1989-12-08 1991-08-06 Matsushita Electric Ind Co Ltd スパッタ用ターゲットの製造方法
JP2000265262A (ja) 1999-03-16 2000-09-26 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリング用ターゲット材の製造方法
JP2001098366A (ja) 1999-07-26 2001-04-10 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001123266A (ja) 1999-10-21 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001240949A (ja) * 2000-02-29 2001-09-04 Mitsubishi Materials Corp 微細な結晶粒を有する高純度銅加工品素材の製造方法
JP2002275698A (ja) * 2001-03-13 2002-09-25 Mitsubishi Materials Corp 電気メッキ用含燐銅陽極
JP2003171797A (ja) * 2001-12-07 2003-06-20 Nikko Materials Co Ltd 電気銅めっき方法、電気銅めっき用純銅アノード及びこれらを用いてめっきされたパーティクル付着の少ない半導体ウエハ
JP2003231995A (ja) * 2002-02-13 2003-08-19 Nikko Materials Co Ltd 電気銅めっき用含リン銅アノード、該含リン銅アノードを使用する電気銅めっき方法、これらを用いてめっきされたパーティクル付着の少ない半導体ウエハ

Non-Patent Citations (1)

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Title
See also references of EP2213772A4

Also Published As

Publication number Publication date
CN101796224B (zh) 2014-06-18
EP2213772A4 (en) 2012-01-11
JP5066577B2 (ja) 2012-11-07
TW200924037A (en) 2009-06-01
JPWO2009057422A1 (ja) 2011-03-10
EP2213772A1 (en) 2010-08-04
US8216438B2 (en) 2012-07-10
CN101796224A (zh) 2010-08-04
CN103266337A (zh) 2013-08-28
EP2213772B1 (en) 2016-08-17
JP2012188760A (ja) 2012-10-04
KR20090096537A (ko) 2009-09-10
TWI492279B (zh) 2015-07-11
KR101945043B1 (ko) 2019-02-01
JP5709175B2 (ja) 2015-04-30
US20100096271A1 (en) 2010-04-22
CN103726097A (zh) 2014-04-16
CN103726097B (zh) 2016-08-17

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