WO2009052816A2 - Substrat pour composants à semi-conducteur - Google Patents

Substrat pour composants à semi-conducteur Download PDF

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Publication number
WO2009052816A2
WO2009052816A2 PCT/DE2008/001772 DE2008001772W WO2009052816A2 WO 2009052816 A2 WO2009052816 A2 WO 2009052816A2 DE 2008001772 W DE2008001772 W DE 2008001772W WO 2009052816 A2 WO2009052816 A2 WO 2009052816A2
Authority
WO
WIPO (PCT)
Prior art keywords
carrier body
body according
refractory metal
layer
base body
Prior art date
Application number
PCT/DE2008/001772
Other languages
German (de)
English (en)
Other versions
WO2009052816A3 (fr
Inventor
Dirk Lorenzen
Original Assignee
Dirk Lorenzen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dirk Lorenzen filed Critical Dirk Lorenzen
Publication of WO2009052816A2 publication Critical patent/WO2009052816A2/fr
Publication of WO2009052816A3 publication Critical patent/WO2009052816A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Definitions

  • Carrier body for semiconductor devices is Carrier body for semiconductor devices
  • the invention relates to a carrier body for semiconductor components, comprising: at least one heat-conducting base body of electrically conductive at least partially metallic material having at least one receiving surface and at least one support surface opposite the receiving surface, and at least one electrical conductor,
  • At least one mounting surface for material-bonding connection with at least one semiconductor component opposite to the receiving surface and at least one contact surface for contacting a connection body opposite the support surface
  • Thermally conductive carrier bodies for the material connection with semiconductor components contain in many cases a base body made of a highly thermally conductive metal, which contains, for example, copper silver or gold or essentially consists entirely of copper or silver.
  • Heat-conducting carrier body for mechanically stress-relieved material-locking connection with semiconductor components contain in many cases a base body which consists essentially of a highly thermally conductive metal-containing composite material, which has an electrical conductivity by its metal content.
  • These composites usually consist of a first material which has a first thermal expansion coefficient which is greater than that of the semiconductor component, and at least one second material which has a second coefficient of thermal expansion which is smaller than that of the semiconductor component.
  • the first material of the composite for example, at least one highly thermally conductive metal from the group silver, copper, aluminum, magnesium, nickel and cobalt and the second material, for example at least one highly thermally conductive material from the group tungsten , Aluminum nitride, beryllium oxide, Silicon carbide and carbon, for example, in at least one of the carbon fiber, carbon nanotube, graphite, graphene and diamond modifications.
  • the second material is in the form of a filler, for example, as a sintered body, which is embedded in a matrix of the first material.
  • a filler for example, as a sintered body, which is embedded in a matrix of the first material.
  • electrically insulating fillers in a metallic matrix also does not change the electrically conductive property of these composite materials and of the main body, which essentially consists of this composite material.
  • connection body for example a heat sink
  • Metals in particular metals of the group gold, silver, copper, aluminum, magnesium, nickel and cobalt.
  • the insulating layer extends contiguous from the receiving surface on the support surface and
  • a contiguous adhesion promoting layer containing at least one refractory metal or a refractory metal compound.
  • Refractory metals are the elements of the 4th, 5th and 6th subgroups of the Periodic Table of the Chemical Elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W) as well as their alloys and compounds.
  • the refractory metal compounds include all chemical compounds which contain an element of the 4th, 5th and 6th subgroup of the Periodic Table of the Chemical Elements.
  • the preferred refractory metal compounds include refractory metal oxides, nitrides, borides, carbides, carbonitrides, silicides and compounds containing aluminum and / or cobalt.
  • the refractory metals form on their surface a native oxide layer, which can already ensure sufficient electrical insulation for low voltage differences.
  • the oxide layer can be reinforced by thermal or anodic oxidation and by subsequent deposition of a refractory metal oxide from the gas phase.
  • the refractory metal layer may additionally be coated with silicon, silicon oxide, silicon nitride, silicon carbide, boron, boron nitride, boron carbide, carbon, particularly in the form of diamond or diamond-like carbon, alumina or aluminum nitride.
  • These materials are particularly suitable because their adhesive strength is aided by the propensity of the refractory metals for stable oxide, boride, nitride, carbide and silicide formation. This tendency to form compounds is largely absent from the high-thermal conductivity metals gold, silver and copper mentioned above.
  • a silicon layer applied to the refractory metal can form an electrically insulating silicon oxide layer on the surface by thermal oxidation.
  • the invention is not restricted to a single adhesion-promoting layer according to the invention or to a single insulation layer. If it is useful for the requirements of adhesion and / or insulation resistance, a plurality of adhesion-promoting layers and insulating layers according to the invention may be arranged between the conductor and the electrically conductive material of the base body. Particularly suitable are layer sequences which start with a refractory metal layer and end with a refractory metal layer.
  • At least one first layer contains a refractory metal or a refractory metal compound and a second layer which is arranged on the side facing away from the electrically conductive material of the base body of the first layer and electrically insulating, are conceivable and are within the scope of the invention.
  • the invention is generally not limited to a specific shape, orientation or position of the side surface of the base body, as long as the side surface according to the invention between a first plane which contacts the receiving surface, and a second plane which contacts the support surface is arranged.
  • the side surface may be an outer surface of the base body or else an inner surface of a continuous recess in the base body, which extends for example from the receiving surface to the support surface.
  • the side surface is preferably an outer surface of the base body, as long as not by a recess in the Gaind emotions and the use of the recess for passing the conductor through the recess an advantageous feature of the carrier body is formed.
  • the invention is not limited to a particular conductor.
  • the material, the shape and the position of the conductor are freely selectable according to an advantageous embodiment of the carrier body.
  • the electrical conductor in the form of thin metallization layers may be applied to the electrically insulating layer by physical or chemical vapor deposition of a metal or one of its compounds from which it is reduced.
  • a metalization may consist of several layers of different metals, which have individually or jointly adhesion-promoting, diffusion-inhibiting and / or solder wetting-promoting properties.
  • Deposition of metal ions is realized on a previously deposited thin-film metallization.
  • the electrical conductor can be designed as a metal sheet, which is connected for example by soldering to the body. If an active solder is used for soldering, then the metal sheet can be applied directly to the electrically insulating layer.
  • 1a-1d show the coating of a base body, which is shown in cross-sectional views and designed as a microchannel heat sink;
  • FIGS. 2a-2d show the coating of a cuboid basic body shown in cross-sectional views
  • FIGS. 1a to 1d are side views of embodiments for diode laser devices with support bodies according to the invention.
  • the microchannel heat sink 1 shown in FIGS. 1a to 1d consists of a multilayer system of structured and interconnected copper-coated molybdenum sheets, not shown.
  • the microchannel heat sink 1 is coated with tungsten on its entire outer and partly inner surface, so that an adhesive layer 2 consisting of tungsten is formed (FIG. 1b). Such a coating can also be carried out on a benefit of manufacturing mutually mechanically connected micro-channel heat sinks.
  • an electrically insulating diamond layer 3 is applied to the tungsten layer 2 (FIG. 1c).
  • a metallization 4 is applied to the diamond layer 3 and serves as an electrical conductor between a heat sink top side on the metallization ' 4 mounting surface 5 and a heat sink bottom side located on the metallization 4 pad 6.
  • connection surface 6 is provided for contacting a connection body, via which, for example, electric current can be conducted to the semiconductor component and / or the heat arising during operation of the semiconductor component can be dissipated.
  • An inlet opening 17 and an outlet opening 18, which communicate with a channel structure 19, are formed as openings in the base body of the microchannel heat sink 1.
  • electrical connection element results in a diode laser component.
  • Such a diode laser component is suitable for stacking a plurality of similar diode laser components one above the other, wherein the pad of a first diode laser component is contacted by an electrical terminal of an adjacent diode laser component.
  • the cuboid main body 7 shown in FIGS. 2a to 2d consists of a carbon-metal composite (carbon in the modifications graphite, carbon nanotubes, carbon fibers,
  • the main body 7 receives substantially on its entire surface first a tantalum layer 8 as an adhesion-promoting layer. This can be done by electrolytic deposition from a molten salt or physical or chemical vapor deposition ( Figure 2b).
  • the surface of the tantalum layer 8 is anodized to a tantalum oxide layer thickness that meets the requirements for a desired breakdown field strength. Should If the desired oxide layer thickness can not be achieved by means of anodic oxidation, tantalum oxide 9 can instead or additionally be deposited directly on the surface of the tantalum layer 8 (FIG. 2 c).
  • a metallization 10 serving as an electrical conductor is applied, which establishes a current connection between the upper-side mounting surface 5 and the lower-side connection surface 6 (FIG. 2d).
  • the basic body 11 shown in FIGS. 3 a to 3 c is provided with a refractory metal coating lying under differently designed metallization and insulation layers.
  • the base body 11 coated in this way has a longitudinal axis directed parallel to the light emission direction of a laser diode element designed as a laser bar 12, a depth axis running in the pn transition direction, and a width axis directed perpendicular to the depth and longitudinal axes.
  • the laser bar 12 is epitaxially mounted on a mounting surface of a first metallization layer 13 which extends on an upper side receiving surface of the base body 11 in the direction of the longitudinal axis from a front edge over about the first quarter of the base body 11.
  • the substrate side of the laser bar 12 is connected via bonding wires 14 with a second metallization layer 15, which extends on the upper side receiving surface in the direction of the longitudinal axis at least over the adjoining the first quarter second quarter of the base body 11.
  • the first metallization layer 13 encases the base body 11 from the front edge on a first quarter in the direction of its longitudinal axis, the second metallization layer 15 in a subsequent second quarter and a third, electrically neutral metallization layer 16 in a third and fourth quarter.
  • the second metallization layer 15 extends on the upper-side receiving surface from the second to the fourth quarter of the main body 11 in the direction of its longitudinal axis and completely encases the main body 11 in the fourth quarter.
  • the front and rear end faces of the main body 11 have no metallization layer in the embodiments according to FIGS. 3 a and 3 b.
  • the first metallization layer 13 extends from the top side receiving surface over the entire width of the front end face to the lower side support surface, where it expands over about three quarters of the body 11 in the direction of its longitudinal axis.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

L'invention concerne un substrat pour composants à semi-conducteur, lequel substrat comprend au moins une base thermoconductrice en matériau électriquement conducteur et au moins partiellement métallique. Le but de l'invention est d'augmenter l'adhérence à la base d'un revêtement électriquement isolant pour un conducteur électrique s'étendant de la face supérieure à la face inférieure de la base. A cet effet, une couche promotrice d'adhésion continue, allant de la face supérieure à la face inférieure de la base et contenant au moins un métal réfractaire ou un composé métallique réfractaire, est placée entre la couche électriquement isolante et la base.
PCT/DE2008/001772 2007-10-26 2008-10-26 Substrat pour composants à semi-conducteur WO2009052816A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007051800.7 2007-10-26
DE200710051800 DE102007051800A1 (de) 2007-10-26 2007-10-26 Trägerkörper für Halbleiterbauelemente

Publications (2)

Publication Number Publication Date
WO2009052816A2 true WO2009052816A2 (fr) 2009-04-30
WO2009052816A3 WO2009052816A3 (fr) 2009-08-20

Family

ID=40514190

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2008/001772 WO2009052816A2 (fr) 2007-10-26 2008-10-26 Substrat pour composants à semi-conducteur

Country Status (2)

Country Link
DE (1) DE102007051800A1 (fr)
WO (1) WO2009052816A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103626173A (zh) * 2013-11-28 2014-03-12 天津大学 低缺陷石墨烯-氧化硼纳米晶体复合材料的制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT13521U1 (de) * 2013-01-18 2014-02-15 Plansee Se Bauelement

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009978A1 (fr) * 1978-10-06 1980-04-16 Hitachi, Ltd. Circuit intégré de type hybride
US4777060A (en) * 1986-09-17 1988-10-11 Schwarzkopf Development Corporation Method for making a composite substrate for electronic semiconductor parts
US5153986A (en) * 1991-07-17 1992-10-13 International Business Machines Method for fabricating metal core layers for a multi-layer circuit board
EP0660400A1 (fr) * 1993-12-20 1995-06-28 AEROSPATIALE Société Nationale Industrielle Elément de transfert thermique, utilisable notamment en électronique comme support de circuit imprimé ou de composant et son procédé de fabrication
US5653379A (en) * 1989-12-18 1997-08-05 Texas Instruments Incorporated Clad metal substrate
GB2311539A (en) * 1996-03-25 1997-10-01 Electrovac Substrates coated with polycrystalline diamond
EP1055650A1 (fr) * 1998-11-11 2000-11-29 Advanced Materials International Company, Ltd. Materiau composite metallique a base de carbone, et procedes de preparation et d'utilisation correspondants
US6248958B1 (en) * 1998-11-30 2001-06-19 International Business Machines Corporation Resistivity control of CIC material
US20060113546A1 (en) * 2002-10-11 2006-06-01 Chien-Min Sung Diamond composite heat spreaders having low thermal mismatch stress and associated methods

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239746A (en) * 1991-06-07 1993-08-31 Norton Company Method of fabricating electronic circuits
US5853888A (en) * 1997-04-25 1998-12-29 The United States Of America As Represented By The Secretary Of The Navy Surface modification of synthetic diamond for producing adherent thick and thin film metallizations for electronic packaging
RU2190284C2 (ru) * 1998-07-07 2002-09-27 Закрытое акционерное общество "Техно-ТМ" Двусторонний электронный прибор
JP2003289073A (ja) * 2002-01-22 2003-10-10 Canon Inc 半導体装置および半導体装置の製造方法
DE10361899B4 (de) 2003-12-22 2008-10-30 Jenoptik Laserdiode Gmbh Ausdehnungsangepasstes wärmespreizendes Mehrlagensubstrat
JP2006041512A (ja) * 2004-07-27 2006-02-09 Samsung Electronics Co Ltd マルチチップパッケージ用集積回路チップの製造方法及びその方法により形成されたウエハ及びチップ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0009978A1 (fr) * 1978-10-06 1980-04-16 Hitachi, Ltd. Circuit intégré de type hybride
US4777060A (en) * 1986-09-17 1988-10-11 Schwarzkopf Development Corporation Method for making a composite substrate for electronic semiconductor parts
US5653379A (en) * 1989-12-18 1997-08-05 Texas Instruments Incorporated Clad metal substrate
US5153986A (en) * 1991-07-17 1992-10-13 International Business Machines Method for fabricating metal core layers for a multi-layer circuit board
EP0660400A1 (fr) * 1993-12-20 1995-06-28 AEROSPATIALE Société Nationale Industrielle Elément de transfert thermique, utilisable notamment en électronique comme support de circuit imprimé ou de composant et son procédé de fabrication
GB2311539A (en) * 1996-03-25 1997-10-01 Electrovac Substrates coated with polycrystalline diamond
EP1055650A1 (fr) * 1998-11-11 2000-11-29 Advanced Materials International Company, Ltd. Materiau composite metallique a base de carbone, et procedes de preparation et d'utilisation correspondants
US6248958B1 (en) * 1998-11-30 2001-06-19 International Business Machines Corporation Resistivity control of CIC material
US20060113546A1 (en) * 2002-10-11 2006-06-01 Chien-Min Sung Diamond composite heat spreaders having low thermal mismatch stress and associated methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103626173A (zh) * 2013-11-28 2014-03-12 天津大学 低缺陷石墨烯-氧化硼纳米晶体复合材料的制备方法
CN103626173B (zh) * 2013-11-28 2015-07-15 天津大学 低缺陷石墨烯-氧化硼纳米晶体复合材料的制备方法

Also Published As

Publication number Publication date
WO2009052816A3 (fr) 2009-08-20
DE102007051800A1 (de) 2009-05-07

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