WO2009050871A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2009050871A1
WO2009050871A1 PCT/JP2008/002880 JP2008002880W WO2009050871A1 WO 2009050871 A1 WO2009050871 A1 WO 2009050871A1 JP 2008002880 W JP2008002880 W JP 2008002880W WO 2009050871 A1 WO2009050871 A1 WO 2009050871A1
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WO
WIPO (PCT)
Prior art keywords
epitaxial layer
conductivity type
silicon carbide
channel
region
Prior art date
Application number
PCT/JP2008/002880
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English (en)
French (fr)
Inventor
Chiaki Kudou
Osamu Kusumoto
Koichi Hashimoto
Original Assignee
Panasonic Corporation
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Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to US12/518,483 priority Critical patent/US7982224B2/en
Priority to JP2009503562A priority patent/JP4309967B2/ja
Priority to CN2008800011456A priority patent/CN101569015B/zh
Publication of WO2009050871A1 publication Critical patent/WO2009050871A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　炭化硅素からなる第１導電型の半導体基板１０と、半導体基板１０の主面１０ａ上に形成された第１導電型の炭化硅素エピタキシャル層２０と、炭化硅素エピタキシャル層２０の一部に形成された第２導電型のウェル領域２２と、ウェル領域２２の一部に形成された第１導電型のソース領域２４とを備えた半導体装置１００である。炭化硅素エピタキシャル層２０とウェル領域２２とソース領域２４との上には、炭化硅素からなるチャネルエピタキシャル層３０が形成されており、チャネルエピタキシャル層３０のうちウェル領域２２上に位置する部位は、チャネル領域４０として機能し、チャネルエピタキシャル層３０のうちチャネル領域４０を除く部位３３，３５には、第１導電型のドーパントが注入されている。
PCT/JP2008/002880 2007-10-15 2008-10-10 半導体装置およびその製造方法 WO2009050871A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/518,483 US7982224B2 (en) 2007-10-15 2008-10-10 Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration
JP2009503562A JP4309967B2 (ja) 2007-10-15 2008-10-10 半導体装置およびその製造方法
CN2008800011456A CN101569015B (zh) 2007-10-15 2008-10-10 半导体装置及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-267582 2007-10-15
JP2007267582 2007-10-15

Publications (1)

Publication Number Publication Date
WO2009050871A1 true WO2009050871A1 (ja) 2009-04-23

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PCT/JP2008/002880 WO2009050871A1 (ja) 2007-10-15 2008-10-10 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US7982224B2 (ja)
JP (1) JP4309967B2 (ja)
CN (1) CN101569015B (ja)
WO (1) WO2009050871A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100244047A1 (en) * 2009-03-27 2010-09-30 Cree, Inc. Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures
WO2010125819A1 (ja) * 2009-04-30 2010-11-04 パナソニック株式会社 半導体素子、半導体装置および電力変換器
JP4918626B2 (ja) * 2009-04-30 2012-04-18 パナソニック株式会社 半導体素子、半導体装置および電力変換器
JP2012104648A (ja) * 2010-11-10 2012-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2012134492A (ja) * 2010-12-17 2012-07-12 General Electric Co <Ge> 半導体デバイスおよびその製造方法
US8283973B2 (en) 2009-08-19 2012-10-09 Panasonic Corporation Semiconductor element, semiconductor device, and electric power converter
WO2013140473A1 (ja) * 2012-03-23 2013-09-26 パナソニック株式会社 半導体素子
JP2020036045A (ja) * 2019-11-29 2020-03-05 ローム株式会社 半導体装置

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GB2479372B (en) * 2010-04-07 2013-07-24 Ge Aviat Systems Ltd Power switches for aircraft
JP5480169B2 (ja) 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP5728954B2 (ja) * 2011-01-13 2015-06-03 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN102184964B (zh) * 2011-05-12 2013-03-20 西安电子科技大学 N沟道积累型SiC IEMOSFET器件的制备方法
US9214516B2 (en) 2012-03-30 2015-12-15 Hitachi, Ltd. Field effect silicon carbide transistor
CN102738030B (zh) * 2012-06-21 2014-07-02 中国科学院微电子研究所 一种pn结结深测算方法
US9257283B2 (en) * 2012-08-06 2016-02-09 General Electric Company Device having reduced bias temperature instability (BTI)
CN102832248A (zh) * 2012-09-10 2012-12-19 西安电子科技大学 基于半超结的碳化硅mosfet及制作方法
US9530844B2 (en) * 2012-12-28 2016-12-27 Cree, Inc. Transistor structures having reduced electrical field at the gate oxide and methods for making same
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
JP5900698B2 (ja) * 2013-02-13 2016-04-06 富士電機株式会社 半導体装置
JP6206012B2 (ja) * 2013-09-06 2017-10-04 住友電気工業株式会社 炭化珪素半導体装置
TW201620017A (zh) * 2014-11-19 2016-06-01 Hestia Power Inc 碳化矽半導體元件以及其製造方法
CN105810731B (zh) * 2014-12-30 2019-03-01 瀚薪科技股份有限公司 碳化硅半导体元件以及其制造方法
JP6814965B2 (ja) * 2017-03-06 2021-01-20 パナソニックＩｐマネジメント株式会社 半導体エピタキシャルウェハ、半導体素子、および半導体素子の製造方法
CN106898652B (zh) * 2017-03-09 2019-06-04 电子科技大学 一种碳化硅vdmos器件
CN107681001B (zh) * 2017-07-24 2020-04-07 中国电子科技集团公司第五十五研究所 一种碳化硅开关器件及制作方法
US10615274B2 (en) 2017-12-21 2020-04-07 Cree, Inc. Vertical semiconductor device with improved ruggedness
US11489069B2 (en) 2017-12-21 2022-11-01 Wolfspeed, Inc. Vertical semiconductor device with improved ruggedness
US11728422B2 (en) * 2019-11-14 2023-08-15 Stmicroelectronics S.R.L. Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
IT202000015076A1 (it) 2020-06-23 2021-12-23 St Microelectronics Srl Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione
JP7187620B1 (ja) * 2021-07-13 2022-12-12 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
CN114613849B (zh) * 2022-05-10 2022-08-12 深圳市威兆半导体股份有限公司 一种改善短路特性的碳化硅mos器件

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JPH11261061A (ja) * 1998-03-11 1999-09-24 Denso Corp 炭化珪素半導体装置及びその製造方法
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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US9640652B2 (en) 2009-03-27 2017-05-02 Cree, Inc. Semiconductor devices including epitaxial layers and related methods
US20100244047A1 (en) * 2009-03-27 2010-09-30 Cree, Inc. Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures
US8933463B2 (en) 2009-04-30 2015-01-13 Panasonic Intellectual Property Management Co., Ltd. Semiconductor element, semiconductor device, and power converter
JP4918626B2 (ja) * 2009-04-30 2012-04-18 パナソニック株式会社 半導体素子、半導体装置および電力変換器
US8410489B2 (en) 2009-04-30 2013-04-02 Panasonic Corporation Semiconductor element, semiconductor device, and power converter
CN103219382A (zh) * 2009-04-30 2013-07-24 松下电器产业株式会社 半导体元件、半导体装置及电力变换器
WO2010125819A1 (ja) * 2009-04-30 2010-11-04 パナソニック株式会社 半導体素子、半導体装置および電力変換器
CN102414818A (zh) * 2009-04-30 2012-04-11 松下电器产业株式会社 半导体元件、半导体装置及电力变换器
US8283973B2 (en) 2009-08-19 2012-10-09 Panasonic Corporation Semiconductor element, semiconductor device, and electric power converter
US8987817B2 (en) 2010-11-10 2015-03-24 Mitsubishi Electric Corporation Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereof
JP2012104648A (ja) * 2010-11-10 2012-05-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2012134492A (ja) * 2010-12-17 2012-07-12 General Electric Co <Ge> 半導体デバイスおよびその製造方法
WO2013140473A1 (ja) * 2012-03-23 2013-09-26 パナソニック株式会社 半導体素子
US8933466B2 (en) 2012-03-23 2015-01-13 Panasonic Corporation Semiconductor element
JP5481605B2 (ja) * 2012-03-23 2014-04-23 パナソニック株式会社 半導体素子
JP2020036045A (ja) * 2019-11-29 2020-03-05 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN101569015A (zh) 2009-10-28
JP4309967B2 (ja) 2009-08-05
US20100295060A1 (en) 2010-11-25
US7982224B2 (en) 2011-07-19
JPWO2009050871A1 (ja) 2011-02-24
CN101569015B (zh) 2011-01-05

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