WO2009041388A1 - Mask blank, and transferring mask - Google Patents

Mask blank, and transferring mask Download PDF

Info

Publication number
WO2009041388A1
WO2009041388A1 PCT/JP2008/067098 JP2008067098W WO2009041388A1 WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1 JP 2008067098 W JP2008067098 W JP 2008067098W WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
transferring
less
blank
substrate
Prior art date
Application number
PCT/JP2008/067098
Other languages
French (fr)
Japanese (ja)
Inventor
Masahiro Hashimoto
Masaru Tanabe
Original Assignee
Hoya Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation filed Critical Hoya Corporation
Publication of WO2009041388A1 publication Critical patent/WO2009041388A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Provided is a transferring mask, which is used when a fine pattern having a DRAM half pitch (hp) of 45 nm or more in a semiconductor design rule is to be formed by making use of an exposing light wavelength of 200 nm or less. The transferring mask having a transfer pattern on a substrate has such a layer (or a haze reducing layer) between the substrate and the transfer pattern as is made of a material having a band gap of 6.4 eV or less for the exposing light wavelength of 200 nm or less.
PCT/JP2008/067098 2007-09-28 2008-09-22 Mask blank, and transferring mask WO2009041388A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-253250 2007-09-28
JP2007253250A JP2009086094A (en) 2007-09-28 2007-09-28 Mask blank and transferring mask

Publications (1)

Publication Number Publication Date
WO2009041388A1 true WO2009041388A1 (en) 2009-04-02

Family

ID=40511273

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067098 WO2009041388A1 (en) 2007-09-28 2008-09-22 Mask blank, and transferring mask

Country Status (3)

Country Link
JP (1) JP2009086094A (en)
TW (1) TW200921267A (en)
WO (1) WO2009041388A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010008604A (en) * 2008-06-25 2010-01-14 Hoya Corp Mask blank and transfer mask
US8968970B2 (en) 2009-10-09 2015-03-03 Samsung Electronics Co., Ltd. Phase shift masks and methods of forming phase shift masks
KR101663173B1 (en) 2009-10-09 2016-10-07 삼성전자주식회사 Phase shift mask with having a resistance to alkali chemical cleaning and method of manufacturing a phase shift mask
JP5602412B2 (en) * 2009-10-27 2014-10-08 Ｈｏｙａ株式会社 Mask blank, transfer mask, transfer mask set, and semiconductor device manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112429A (en) * 1996-10-07 1998-04-28 Nippon Telegr & Teleph Corp <Ntt> Optical exposure system
JPH10125583A (en) * 1996-10-24 1998-05-15 Nippon Telegr & Teleph Corp <Ntt> X-ray mask
JP2000284468A (en) * 1999-03-31 2000-10-13 Canon Inc Mask structure, exposure method and exposure device using this mask structure, semiconductor device manufactured by using this mask structure and production of semiconductor device
JP2003243292A (en) * 2002-02-18 2003-08-29 Nikon Corp Reflecting mask, aligner, and cleaning method therefor
JP2007184361A (en) * 2006-01-05 2007-07-19 Asahi Glass Co Ltd Glass substrate for thin film device, and film deposition method therefor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2591244Y2 (en) * 1992-11-30 1999-03-03 京セラ株式会社 Photo mask
JPH0784357A (en) * 1993-09-14 1995-03-31 Nikon Corp Exposure mask and projecting exposure method
JP4201162B2 (en) * 2001-03-29 2008-12-24 大日本印刷株式会社 Method for manufacturing pattern formed body and photomask used therefor
JP2005175324A (en) * 2003-12-12 2005-06-30 Nikon Corp Mask-contamination preventing method and apparatus, and aligner
JP2005186005A (en) * 2003-12-26 2005-07-14 Dainippon Printing Co Ltd Production method for photocatalyst-containing layer substrate and pattern formed body
JP4635509B2 (en) * 2004-08-03 2011-02-23 凸版印刷株式会社 Photomask manufacturing method
JP4601459B2 (en) * 2005-03-01 2010-12-22 大日本印刷株式会社 Exposure mask and manufacturing method thereof
JP2008197234A (en) * 2007-02-09 2008-08-28 Nsk Ltd Photomask for proximity exposure, exposure method and exposure device
JP2008286838A (en) * 2007-05-15 2008-11-27 Canon Inc Exposure mask, pattern forming device and pattern forming method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112429A (en) * 1996-10-07 1998-04-28 Nippon Telegr & Teleph Corp <Ntt> Optical exposure system
JPH10125583A (en) * 1996-10-24 1998-05-15 Nippon Telegr & Teleph Corp <Ntt> X-ray mask
JP2000284468A (en) * 1999-03-31 2000-10-13 Canon Inc Mask structure, exposure method and exposure device using this mask structure, semiconductor device manufactured by using this mask structure and production of semiconductor device
JP2003243292A (en) * 2002-02-18 2003-08-29 Nikon Corp Reflecting mask, aligner, and cleaning method therefor
JP2007184361A (en) * 2006-01-05 2007-07-19 Asahi Glass Co Ltd Glass substrate for thin film device, and film deposition method therefor

Also Published As

Publication number Publication date
JP2009086094A (en) 2009-04-23
TW200921267A (en) 2009-05-16

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