WO2009041388A1 - Mask blank, and transferring mask - Google Patents
Mask blank, and transferring mask Download PDFInfo
- Publication number
- WO2009041388A1 WO2009041388A1 PCT/JP2008/067098 JP2008067098W WO2009041388A1 WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1 JP 2008067098 W JP2008067098 W JP 2008067098W WO 2009041388 A1 WO2009041388 A1 WO 2009041388A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mask
- transferring
- less
- blank
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Provided is a transferring mask, which is used when a fine pattern having a DRAM half pitch (hp) of 45 nm or more in a semiconductor design rule is to be formed by making use of an exposing light wavelength of 200 nm or less. The transferring mask having a transfer pattern on a substrate has such a layer (or a haze reducing layer) between the substrate and the transfer pattern as is made of a material having a band gap of 6.4 eV or less for the exposing light wavelength of 200 nm or less.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-253250 | 2007-09-28 | ||
JP2007253250A JP2009086094A (en) | 2007-09-28 | 2007-09-28 | Mask blank and transferring mask |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009041388A1 true WO2009041388A1 (en) | 2009-04-02 |
Family
ID=40511273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/067098 WO2009041388A1 (en) | 2007-09-28 | 2008-09-22 | Mask blank, and transferring mask |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2009086094A (en) |
TW (1) | TW200921267A (en) |
WO (1) | WO2009041388A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010008604A (en) * | 2008-06-25 | 2010-01-14 | Hoya Corp | Mask blank and transfer mask |
US8968970B2 (en) | 2009-10-09 | 2015-03-03 | Samsung Electronics Co., Ltd. | Phase shift masks and methods of forming phase shift masks |
KR101663173B1 (en) | 2009-10-09 | 2016-10-07 | 삼성전자주식회사 | Phase shift mask with having a resistance to alkali chemical cleaning and method of manufacturing a phase shift mask |
JP5602412B2 (en) * | 2009-10-27 | 2014-10-08 | Hoya株式会社 | Mask blank, transfer mask, transfer mask set, and semiconductor device manufacturing method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10112429A (en) * | 1996-10-07 | 1998-04-28 | Nippon Telegr & Teleph Corp <Ntt> | Optical exposure system |
JPH10125583A (en) * | 1996-10-24 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
JP2000284468A (en) * | 1999-03-31 | 2000-10-13 | Canon Inc | Mask structure, exposure method and exposure device using this mask structure, semiconductor device manufactured by using this mask structure and production of semiconductor device |
JP2003243292A (en) * | 2002-02-18 | 2003-08-29 | Nikon Corp | Reflecting mask, aligner, and cleaning method therefor |
JP2007184361A (en) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | Glass substrate for thin film device, and film deposition method therefor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2591244Y2 (en) * | 1992-11-30 | 1999-03-03 | 京セラ株式会社 | Photo mask |
JPH0784357A (en) * | 1993-09-14 | 1995-03-31 | Nikon Corp | Exposure mask and projecting exposure method |
JP4201162B2 (en) * | 2001-03-29 | 2008-12-24 | 大日本印刷株式会社 | Method for manufacturing pattern formed body and photomask used therefor |
JP2005175324A (en) * | 2003-12-12 | 2005-06-30 | Nikon Corp | Mask-contamination preventing method and apparatus, and aligner |
JP2005186005A (en) * | 2003-12-26 | 2005-07-14 | Dainippon Printing Co Ltd | Production method for photocatalyst-containing layer substrate and pattern formed body |
JP4635509B2 (en) * | 2004-08-03 | 2011-02-23 | 凸版印刷株式会社 | Photomask manufacturing method |
JP4601459B2 (en) * | 2005-03-01 | 2010-12-22 | 大日本印刷株式会社 | Exposure mask and manufacturing method thereof |
JP2008197234A (en) * | 2007-02-09 | 2008-08-28 | Nsk Ltd | Photomask for proximity exposure, exposure method and exposure device |
JP2008286838A (en) * | 2007-05-15 | 2008-11-27 | Canon Inc | Exposure mask, pattern forming device and pattern forming method |
-
2007
- 2007-09-28 JP JP2007253250A patent/JP2009086094A/en active Pending
-
2008
- 2008-09-22 WO PCT/JP2008/067098 patent/WO2009041388A1/en active Application Filing
- 2008-09-26 TW TW097137086A patent/TW200921267A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10112429A (en) * | 1996-10-07 | 1998-04-28 | Nippon Telegr & Teleph Corp <Ntt> | Optical exposure system |
JPH10125583A (en) * | 1996-10-24 | 1998-05-15 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
JP2000284468A (en) * | 1999-03-31 | 2000-10-13 | Canon Inc | Mask structure, exposure method and exposure device using this mask structure, semiconductor device manufactured by using this mask structure and production of semiconductor device |
JP2003243292A (en) * | 2002-02-18 | 2003-08-29 | Nikon Corp | Reflecting mask, aligner, and cleaning method therefor |
JP2007184361A (en) * | 2006-01-05 | 2007-07-19 | Asahi Glass Co Ltd | Glass substrate for thin film device, and film deposition method therefor |
Also Published As
Publication number | Publication date |
---|---|
JP2009086094A (en) | 2009-04-23 |
TW200921267A (en) | 2009-05-16 |
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