WO2009041283A1 - Gas supplying apparatus - Google Patents

Gas supplying apparatus Download PDF

Info

Publication number
WO2009041283A1
WO2009041283A1 PCT/JP2008/066457 JP2008066457W WO2009041283A1 WO 2009041283 A1 WO2009041283 A1 WO 2009041283A1 JP 2008066457 W JP2008066457 W JP 2008066457W WO 2009041283 A1 WO2009041283 A1 WO 2009041283A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas supplying
gas
processing
ports
supplying apparatus
Prior art date
Application number
PCT/JP2008/066457
Other languages
French (fr)
Japanese (ja)
Inventor
Einosuke Tsuda
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2009041283A1 publication Critical patent/WO2009041283A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A gas supplying apparatus is provided with a gas supplying apparatus main body (4a) and gas supplying plates (44, 45). The gas supplying apparatus main body is provided with a plurality of introducing ports (51a, 52a, 53a, 54a) for introducing a processing gas, and gas channels (511, 512, 521, 522, 531, 532) for guiding the processing gas. The gas supplying plates are arranged to face a substrate (W) placed on a placing table (3) inside a processing container (2), and are provided with a plurality of gas supplying ports (51b, 52b, 53b) for supplying the substrate (W) with the processing gas. The gas supplying plates (44, 45) include a plurality of gas supplying ports (51b, 52b, 53b) and have the first gas supplying plate (45) which supplies the processing gases of a plurality of kinds different from one another, and the second gas supplying plate (44) which includes a plurality of gas supplying ports. The first gas supplying plate (45) is removably arranged on the gas supplying apparatus main body.
PCT/JP2008/066457 2007-09-28 2008-09-11 Gas supplying apparatus WO2009041283A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-255808 2007-09-28
JP2007255808A JP5444599B2 (en) 2007-09-28 2007-09-28 Gas supply apparatus and film forming apparatus

Publications (1)

Publication Number Publication Date
WO2009041283A1 true WO2009041283A1 (en) 2009-04-02

Family

ID=40511172

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066457 WO2009041283A1 (en) 2007-09-28 2008-09-11 Gas supplying apparatus

Country Status (3)

Country Link
JP (1) JP5444599B2 (en)
TW (1) TW200932945A (en)
WO (1) WO2009041283A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020167380A (en) * 2019-03-28 2020-10-08 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus
CN114351116A (en) * 2020-10-13 2022-04-15 中国科学院微电子研究所 Atomic layer deposition apparatus and atomic layer deposition method

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5445252B2 (en) * 2010-03-16 2014-03-19 東京エレクトロン株式会社 Deposition equipment
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
JP6013077B2 (en) * 2012-08-13 2016-10-25 株式会社カネカ Vacuum deposition apparatus and organic EL device manufacturing method
CN104810238A (en) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 Gas homogenizing structure and plasma system
JP2016036018A (en) * 2014-07-31 2016-03-17 東京エレクトロン株式会社 Plasma processing device and gas supply member
US10829855B2 (en) 2016-05-20 2020-11-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
JP6352993B2 (en) * 2016-08-10 2018-07-04 株式会社東芝 Flow path structure and processing apparatus
JP6723116B2 (en) * 2016-08-31 2020-07-15 株式会社日本製鋼所 Atomic layer growth apparatus and atomic layer growth method
JP6665760B2 (en) * 2016-11-16 2020-03-13 日本電気硝子株式会社 Glass substrate manufacturing apparatus and manufacturing method
CN111433902A (en) * 2017-12-08 2020-07-17 朗姆研究公司 Integrated showerhead with improved hole pattern for delivery of radicals and precursor gases to downstream chamber for remote plasma film deposition
US11149350B2 (en) 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10121253A (en) * 1996-07-24 1998-05-12 Applied Materials Inc Control of plural region gas flow in treatment chamber
JP2003309075A (en) * 2002-04-18 2003-10-31 Mitsubishi Electric Corp Semiconductor manufacturing apparatus and method for manufacturing semiconductor device
JP2005048208A (en) * 2003-07-30 2005-02-24 Hitachi Kokusai Electric Inc Substrate treatment device
JP2005236124A (en) * 2004-02-20 2005-09-02 Asm Japan Kk Shower plate and plasma treatment apparatus
JP2006120853A (en) * 2004-10-21 2006-05-11 Matsushita Electric Ind Co Ltd Apparatus and method of processing substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100331544B1 (en) * 1999-01-18 2002-04-06 윤종용 Method for introducing gases into a reactor chamber and a shower head used therein

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10121253A (en) * 1996-07-24 1998-05-12 Applied Materials Inc Control of plural region gas flow in treatment chamber
JP2003309075A (en) * 2002-04-18 2003-10-31 Mitsubishi Electric Corp Semiconductor manufacturing apparatus and method for manufacturing semiconductor device
JP2005048208A (en) * 2003-07-30 2005-02-24 Hitachi Kokusai Electric Inc Substrate treatment device
JP2005236124A (en) * 2004-02-20 2005-09-02 Asm Japan Kk Shower plate and plasma treatment apparatus
JP2006120853A (en) * 2004-10-21 2006-05-11 Matsushita Electric Ind Co Ltd Apparatus and method of processing substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020167380A (en) * 2019-03-28 2020-10-08 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus
CN114351116A (en) * 2020-10-13 2022-04-15 中国科学院微电子研究所 Atomic layer deposition apparatus and atomic layer deposition method

Also Published As

Publication number Publication date
JP2009088232A (en) 2009-04-23
TW200932945A (en) 2009-08-01
JP5444599B2 (en) 2014-03-19

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