WO2009040670A3 - Semiconductor device and manufacturing method therefor - Google Patents

Semiconductor device and manufacturing method therefor Download PDF

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Publication number
WO2009040670A3
WO2009040670A3 PCT/IB2008/003119 IB2008003119W WO2009040670A3 WO 2009040670 A3 WO2009040670 A3 WO 2009040670A3 IB 2008003119 W IB2008003119 W IB 2008003119W WO 2009040670 A3 WO2009040670 A3 WO 2009040670A3
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
semiconductor device
method therefor
plasma
barrier layer
Prior art date
Application number
PCT/IB2008/003119
Other languages
French (fr)
Other versions
WO2009040670A2 (en
Inventor
Kotaro Miyatani
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2009040670A2 publication Critical patent/WO2009040670A2/en
Publication of WO2009040670A3 publication Critical patent/WO2009040670A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present invention is a method of forming a barrier layer, which includes an insulator, on a fluorocarbon film formed on a substrate, the method including the steps of producing a plasma from a gas, forming the barrier layer on the fluorocarbon film by using the plasma and exposing the surface of the substrate to the plasma including a nitrogen to dope the nitrogen to the surface of the barrier layer.
PCT/IB2008/003119 2007-09-26 2008-09-25 Semiconductor device and manufacturing method therefor WO2009040670A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99543207P 2007-09-26 2007-09-26
US60/995,432 2007-09-26

Publications (2)

Publication Number Publication Date
WO2009040670A2 WO2009040670A2 (en) 2009-04-02
WO2009040670A3 true WO2009040670A3 (en) 2009-10-15

Family

ID=40511956

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/003119 WO2009040670A2 (en) 2007-09-26 2008-09-25 Semiconductor device and manufacturing method therefor

Country Status (1)

Country Link
WO (1) WO2009040670A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104752400B (en) * 2013-12-31 2019-06-04 中芯国际集成电路制造(上海)有限公司 Connected medium layer, its production method and the semiconductor devices including it

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187342A (en) * 1996-11-28 1999-03-30 Sony Corp Method of forming inter-layer dielectric
JP2003218109A (en) * 2002-01-17 2003-07-31 Internatl Business Mach Corp <Ibm> Method for forming metallic pattern using sacrifice hard mask
JP2003531493A (en) * 2000-04-03 2003-10-21 シャープ株式会社 Method for enhancing adhesion of silicon nitride to low dielectric constant fluorine-containing amorphous carbon using silicon carbide adhesion promoter layer
JP2005217142A (en) * 2004-01-29 2005-08-11 Semiconductor Leading Edge Technologies Inc Process for fabricating semiconductor device
WO2006137384A1 (en) * 2005-06-20 2006-12-28 Tohoku University Interlayer insulating film and wiring structure, and process for producing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1187342A (en) * 1996-11-28 1999-03-30 Sony Corp Method of forming inter-layer dielectric
JP2003531493A (en) * 2000-04-03 2003-10-21 シャープ株式会社 Method for enhancing adhesion of silicon nitride to low dielectric constant fluorine-containing amorphous carbon using silicon carbide adhesion promoter layer
JP2003218109A (en) * 2002-01-17 2003-07-31 Internatl Business Mach Corp <Ibm> Method for forming metallic pattern using sacrifice hard mask
JP2005217142A (en) * 2004-01-29 2005-08-11 Semiconductor Leading Edge Technologies Inc Process for fabricating semiconductor device
WO2006137384A1 (en) * 2005-06-20 2006-12-28 Tohoku University Interlayer insulating film and wiring structure, and process for producing the same

Also Published As

Publication number Publication date
WO2009040670A2 (en) 2009-04-02

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