WO2009035219A3 - Gan-based light emitting diode and method for fabricating the same - Google Patents

Gan-based light emitting diode and method for fabricating the same Download PDF

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Publication number
WO2009035219A3
WO2009035219A3 PCT/KR2008/004803 KR2008004803W WO2009035219A3 WO 2009035219 A3 WO2009035219 A3 WO 2009035219A3 KR 2008004803 W KR2008004803 W KR 2008004803W WO 2009035219 A3 WO2009035219 A3 WO 2009035219A3
Authority
WO
WIPO (PCT)
Prior art keywords
gan
semiconductor layer
fabricating
emitting diode
light emitting
Prior art date
Application number
PCT/KR2008/004803
Other languages
French (fr)
Other versions
WO2009035219A2 (en
Inventor
Jae-Eung Oh
Original Assignee
Wooree Lst Co Ltd
Jae-Eung Oh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wooree Lst Co Ltd, Jae-Eung Oh filed Critical Wooree Lst Co Ltd
Publication of WO2009035219A2 publication Critical patent/WO2009035219A2/en
Publication of WO2009035219A3 publication Critical patent/WO2009035219A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

There are provided a GaN-based light emitting diode (LED) capable of minimizing the structural defect of the GaN-based LED when a substrate is separated from the GaN-based LED and of maximizing light extraction efficiency and a method of fabricating the same. The GaN- based LED including a GaN-based semiconductor layer formed of a plurality of layers. A scattering inducing unit for scattering light generated from the GaN-based semiconductor layer is provided at the lower end of the GaN-based semiconductor layer. The scattering inducing unit may include a plurality of scattering inducing grooves formed on the lower surface of the GaN- based semiconductor layer. The plurality of scattering inducing grooves may be separated from each other by a uniform distance.
PCT/KR2008/004803 2007-09-14 2008-08-19 Gan-based light emitting diode and method for fabricating the same WO2009035219A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070093688A KR100889568B1 (en) 2007-09-14 2007-09-14 GaN-based Light Emitting Diode and method for fabricating the same
KR10-2007-0093688 2007-09-14

Publications (2)

Publication Number Publication Date
WO2009035219A2 WO2009035219A2 (en) 2009-03-19
WO2009035219A3 true WO2009035219A3 (en) 2009-06-04

Family

ID=40452666

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/004803 WO2009035219A2 (en) 2007-09-14 2008-08-19 Gan-based light emitting diode and method for fabricating the same

Country Status (2)

Country Link
KR (1) KR100889568B1 (en)
WO (1) WO2009035219A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130260B (en) * 2010-09-30 2013-09-18 映瑞光电科技(上海)有限公司 Luminous device and manufacturing method thereof
KR20160008382A (en) * 2014-07-14 2016-01-22 서울대학교산학협력단 Semiconductor thin film structure, method and apparatus for separating nitride semiconductor using the same
KR101809252B1 (en) 2017-02-24 2017-12-14 서울대학교산학협력단 Semiconductor thin film structure, method and apparatus for separating nitride semiconductor using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11103090A (en) * 1997-09-29 1999-04-13 Hitachi Cable Ltd Light-emitting diode
EP1555686A2 (en) * 2004-01-15 2005-07-20 LG Electronics Inc. High quality nitride semiconductor thin film and method for growing the same
KR20060108882A (en) * 2005-04-14 2006-10-18 삼성전기주식회사 Method for manufacturing vertical iii-nitride light emitting device
US20060286697A1 (en) * 2005-06-16 2006-12-21 Leem See J Method for manufacturing light emitting diodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070009854A (en) * 2005-07-14 2007-01-19 에피밸리 주식회사 Compound semiconductor light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11103090A (en) * 1997-09-29 1999-04-13 Hitachi Cable Ltd Light-emitting diode
EP1555686A2 (en) * 2004-01-15 2005-07-20 LG Electronics Inc. High quality nitride semiconductor thin film and method for growing the same
KR20060108882A (en) * 2005-04-14 2006-10-18 삼성전기주식회사 Method for manufacturing vertical iii-nitride light emitting device
US20060286697A1 (en) * 2005-06-16 2006-12-21 Leem See J Method for manufacturing light emitting diodes

Also Published As

Publication number Publication date
KR100889568B1 (en) 2009-03-23
WO2009035219A2 (en) 2009-03-19
KR20090028235A (en) 2009-03-18

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