WO2009034687A1 - 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 - Google Patents
不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 Download PDFInfo
- Publication number
- WO2009034687A1 WO2009034687A1 PCT/JP2008/002291 JP2008002291W WO2009034687A1 WO 2009034687 A1 WO2009034687 A1 WO 2009034687A1 JP 2008002291 W JP2008002291 W JP 2008002291W WO 2009034687 A1 WO2009034687 A1 WO 2009034687A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- storage apparatus
- nonvolatile storage
- resistance
- resistance state
- series
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0038—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0078—Write using current through the cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Semiconductor Memories (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/677,421 US8102696B2 (en) | 2007-09-10 | 2008-08-25 | Nonvolatile memory device and method of writing data to nonvolatile memory device |
JP2009532050A JP5065401B2 (ja) | 2007-09-10 | 2008-08-25 | 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 |
CN2008801063829A CN101802921B (zh) | 2007-09-10 | 2008-08-25 | 非易失性存储装置和向非易失性存储装置的数据写入方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-233804 | 2007-09-10 | ||
JP2007233804 | 2007-09-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009034687A1 true WO2009034687A1 (ja) | 2009-03-19 |
Family
ID=40451708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/002291 WO2009034687A1 (ja) | 2007-09-10 | 2008-08-25 | 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8102696B2 (ja) |
JP (1) | JP5065401B2 (ja) |
CN (1) | CN101802921B (ja) |
WO (1) | WO2009034687A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012026506A1 (ja) * | 2010-08-26 | 2012-03-01 | 独立行政法人産業技術総合研究所 | メモリ素子の駆動方法及びメモリ素子を用いた記憶装置 |
WO2012056689A1 (ja) * | 2010-10-29 | 2012-05-03 | パナソニック株式会社 | 不揮発性記憶装置 |
US8421051B2 (en) | 2009-08-07 | 2013-04-16 | Kabushiki Kaisha Toshiba | Resistance-change memory |
US9093143B2 (en) | 2013-03-22 | 2015-07-28 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of controlling the same |
JPWO2017126451A1 (ja) * | 2016-01-18 | 2018-11-22 | 日本電気株式会社 | 論理集積回路および半導体装置 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8094481B2 (en) * | 2007-03-13 | 2012-01-10 | Panasonic Corporation | Resistance variable memory apparatus |
US8593853B2 (en) * | 2010-03-30 | 2013-11-26 | Panasonic Corporation | Nonvolatile storage device and method for writing into the same |
DE102010062238A1 (de) * | 2010-03-30 | 2011-10-06 | Robert Bosch Gmbh | Startvorrichtung, Schnittstelleneinrichtung und Verfahren zum Betreiben eines Systems einer Startvorrichtung |
JP5499364B2 (ja) | 2010-08-26 | 2014-05-21 | 独立行政法人産業技術総合研究所 | メモリ素子の駆動方法及びメモリ素子を備える記憶装置 |
US8331129B2 (en) * | 2010-09-03 | 2012-12-11 | Hewlett-Packard Development Company, L. P. | Memory array with write feedback |
JP5271460B1 (ja) * | 2011-11-29 | 2013-08-21 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置及びその書き込み方法 |
JP6097101B2 (ja) | 2012-03-13 | 2017-03-15 | 株式会社半導体エネルギー研究所 | 記憶装置、データ処理装置及び記憶装置の駆動方法 |
US8804434B2 (en) * | 2012-05-10 | 2014-08-12 | Nxp, B.V. | Pulse-based memory read-out |
US9659648B2 (en) * | 2012-08-29 | 2017-05-23 | SK Hynix Inc. | Semiconductor memory device including switches for selectively turning on bit lines |
TW201417102A (zh) | 2012-10-23 | 2014-05-01 | Ind Tech Res Inst | 電阻式記憶體裝置 |
WO2014100024A1 (en) * | 2012-12-18 | 2014-06-26 | The Regents Of The University Of Michigan | Resistive memory structure for single or multi-bit data storage |
US9299409B2 (en) * | 2013-09-11 | 2016-03-29 | Tadashi Miyakawa | Semiconductor storage device |
KR20150058927A (ko) * | 2013-11-21 | 2015-05-29 | 삼성전자주식회사 | 불 휘발성 메모리의 쓰기 속도를 제어하는 기술 |
WO2016018199A1 (en) | 2014-07-26 | 2016-02-04 | Hewlett-Packard Development Company, L.P. | Printhead with a number of memristor cells and a parallel current distributor |
US9805794B1 (en) * | 2015-05-19 | 2017-10-31 | Crossbar, Inc. | Enhanced erasing of two-terminal memory |
WO2017131651A1 (en) * | 2016-01-27 | 2017-08-03 | Hewlett Packard Enterprise Development Lp | Memristive array with parallel reset control devices |
US9722822B1 (en) * | 2016-03-04 | 2017-08-01 | Inphi Corporation | Method and system using driver equalization in transmission line channels with power or ground terminations |
US9544864B1 (en) * | 2016-03-07 | 2017-01-10 | Panasonic Liquid Crystal Display Co., Ltd. | Data transmission system and receiving device |
US9819523B2 (en) * | 2016-03-09 | 2017-11-14 | Qualcomm Incorporated | Intelligent equalization for a three-transmitter multi-phase system |
JP2017199443A (ja) * | 2016-04-27 | 2017-11-02 | ソニー株式会社 | 半導体記憶装置、駆動方法、および電子機器 |
WO2021120136A1 (zh) * | 2019-12-19 | 2021-06-24 | 浙江大学 | 存储计算阵列及模组、数据计算方法 |
TWI784515B (zh) | 2020-05-27 | 2022-11-21 | 台灣積體電路製造股份有限公司 | 記憶體系統以及操作記憶體系統的方法 |
US11437092B2 (en) | 2020-05-27 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods to store multi-level data |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073010A (ja) * | 2004-09-02 | 2006-03-16 | Hewlett-Packard Development Co Lp | プログラム可能な抵抗メモリ素子のプログラミング |
WO2006137111A1 (ja) * | 2005-06-20 | 2006-12-28 | Fujitsu Limited | 不揮発性半導体記憶装置及びその書き込み方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6597598B1 (en) * | 2002-04-30 | 2003-07-22 | Hewlett-Packard Development Company, L.P. | Resistive cross point memory arrays having a charge injection differential sense amplifier |
JP4205938B2 (ja) | 2002-12-05 | 2009-01-07 | シャープ株式会社 | 不揮発性メモリ装置 |
US6847544B1 (en) * | 2003-10-20 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | Magnetic memory which detects changes between first and second resistive states of memory cell |
JP4385778B2 (ja) | 2004-01-29 | 2009-12-16 | ソニー株式会社 | 記憶装置 |
JP2006294182A (ja) | 2005-04-14 | 2006-10-26 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
JP2007018615A (ja) * | 2005-07-08 | 2007-01-25 | Sony Corp | 記憶装置及び半導体装置 |
JP4203506B2 (ja) * | 2006-01-13 | 2009-01-07 | シャープ株式会社 | 不揮発性半導体記憶装置及びその書き換え方法 |
-
2008
- 2008-08-25 US US12/677,421 patent/US8102696B2/en not_active Expired - Fee Related
- 2008-08-25 CN CN2008801063829A patent/CN101802921B/zh not_active Expired - Fee Related
- 2008-08-25 JP JP2009532050A patent/JP5065401B2/ja not_active Expired - Fee Related
- 2008-08-25 WO PCT/JP2008/002291 patent/WO2009034687A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006073010A (ja) * | 2004-09-02 | 2006-03-16 | Hewlett-Packard Development Co Lp | プログラム可能な抵抗メモリ素子のプログラミング |
WO2006137111A1 (ja) * | 2005-06-20 | 2006-12-28 | Fujitsu Limited | 不揮発性半導体記憶装置及びその書き込み方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8421051B2 (en) | 2009-08-07 | 2013-04-16 | Kabushiki Kaisha Toshiba | Resistance-change memory |
WO2012026506A1 (ja) * | 2010-08-26 | 2012-03-01 | 独立行政法人産業技術総合研究所 | メモリ素子の駆動方法及びメモリ素子を用いた記憶装置 |
US9135990B2 (en) | 2010-08-26 | 2015-09-15 | National Institute Of Advanced Industrial Science And Technology | Drive method for memory element, and storage device using memory element |
WO2012056689A1 (ja) * | 2010-10-29 | 2012-05-03 | パナソニック株式会社 | 不揮発性記憶装置 |
JP5000026B2 (ja) * | 2010-10-29 | 2012-08-15 | パナソニック株式会社 | 不揮発性記憶装置 |
US8619460B2 (en) | 2010-10-29 | 2013-12-31 | Panasonic Corporation | Nonvolatile memory device and method for programming nonvolatile memory element |
US9093143B2 (en) | 2013-03-22 | 2015-07-28 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method of controlling the same |
JPWO2017126451A1 (ja) * | 2016-01-18 | 2018-11-22 | 日本電気株式会社 | 論理集積回路および半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US8102696B2 (en) | 2012-01-24 |
CN101802921B (zh) | 2013-08-28 |
JP5065401B2 (ja) | 2012-10-31 |
CN101802921A (zh) | 2010-08-11 |
US20100202185A1 (en) | 2010-08-12 |
JPWO2009034687A1 (ja) | 2010-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009034687A1 (ja) | 不揮発性記憶装置および不揮発性記憶装置へのデータ書込方法 | |
WO2009016824A1 (ja) | 不揮発性記憶装置 | |
KR102179899B1 (ko) | 뉴로모픽 시스템 및 그 구현 방법 | |
CN111263963B (zh) | 用于读取和写入优化的解码器电路中的电阻和栅极控制 | |
US8305793B2 (en) | Integrated circuit with an array of resistance changing memory cells | |
US9001561B2 (en) | Performing forming processes on resistive memory | |
US20190066784A1 (en) | Memory Systems and Memory Programming Methods | |
WO2007008701A3 (en) | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements | |
WO2005057585A3 (en) | Nand memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same | |
CN109841248B (zh) | 存储装置及其操作方法 | |
WO2007008699A3 (en) | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements | |
TW200733358A (en) | Memory cell comprising switchable semiconductor memory element with trimmable resistance | |
WO2008105155A1 (ja) | 不揮発性メモリ装置、および不揮発性メモリ装置におけるデータ書込方法 | |
WO2007062100A3 (en) | Method and system for providing current balanced writing for memory cells and magnetic devices | |
TWI543160B (zh) | 電阻可變記憶體感測 | |
WO2009057275A1 (ja) | 不揮発性記憶装置および不揮発性データ記録メディア | |
WO2009134664A3 (en) | Method and apparatus for implementing self-referencing read operation for pcram devices | |
JP2015022788A5 (ja) | ||
KR20140072207A (ko) | 저항성 메모리의 안정화 | |
EP1426972A3 (en) | Nonvolatile memory device | |
WO2009139567A3 (en) | Memory device and memory programming method | |
WO2010110938A3 (en) | Pulse control for nonvolatile memory | |
WO2009041041A1 (ja) | 不揮発性記憶素子及び不揮発性半導体記憶装置、並びにそれらの読み出し方法及び書き込み方法 | |
US9595327B2 (en) | Variable resistance memory device and verify method thereof | |
EP2684192B1 (en) | Programming a phase change memory cell in voltage mode and current mode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880106382.9 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08790495 Country of ref document: EP Kind code of ref document: A1 |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2009532050 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12677421 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08790495 Country of ref document: EP Kind code of ref document: A1 |