WO2009005614A3 - 3d r/w cell with diode and resistive semiconductor element and method of making thereof - Google Patents
3d r/w cell with diode and resistive semiconductor element and method of making thereof Download PDFInfo
- Publication number
- WO2009005614A3 WO2009005614A3 PCT/US2008/007758 US2008007758W WO2009005614A3 WO 2009005614 A3 WO2009005614 A3 WO 2009005614A3 US 2008007758 W US2008007758 W US 2008007758W WO 2009005614 A3 WO2009005614 A3 WO 2009005614A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diode
- cell
- making
- semiconductor element
- resistive semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/33—Material including silicon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08779718A EP2165337A2 (en) | 2007-06-29 | 2008-06-23 | 3d r/w cell with diode and resistive semiconductor element and method of making thereof |
CN200880024858.4A CN101796588B (en) | 2007-06-29 | 2008-06-23 | 3d r/w cell with reduced reverse leakage and method of making thereof |
JP2010514766A JP5695417B2 (en) | 2007-06-29 | 2008-06-23 | 3D read / write cell with reduced reverse leakage and method of making it |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/819,895 | 2007-06-29 | ||
US11/819,989 | 2007-06-29 | ||
US11/819,895 US7800939B2 (en) | 2007-06-29 | 2007-06-29 | Method of making 3D R/W cell with reduced reverse leakage |
US11/819,989 US7759666B2 (en) | 2007-06-29 | 2007-06-29 | 3D R/W cell with reduced reverse leakage |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009005614A2 WO2009005614A2 (en) | 2009-01-08 |
WO2009005614A3 true WO2009005614A3 (en) | 2009-03-26 |
Family
ID=39735143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/007758 WO2009005614A2 (en) | 2007-06-29 | 2008-06-23 | 3d r/w cell with diode and resistive semiconductor element and method of making thereof |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2165337A2 (en) |
JP (1) | JP5695417B2 (en) |
KR (1) | KR20100049564A (en) |
CN (1) | CN101796588B (en) |
TW (1) | TW200908205A (en) |
WO (1) | WO2009005614A2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5367400B2 (en) * | 2009-02-12 | 2013-12-11 | 株式会社東芝 | Semiconductor memory device and manufacturing method thereof |
JP2011165854A (en) * | 2010-02-09 | 2011-08-25 | Toshiba Corp | Memory device and method of manufacturing the same |
JP5422534B2 (en) * | 2010-10-14 | 2014-02-19 | 株式会社東芝 | Nonvolatile resistance change element and method of manufacturing nonvolatile resistance change element |
US9331272B2 (en) | 2011-06-10 | 2016-05-03 | Seoul National University R&Db Foundation | 3-dimensional (3D) non-volatile memory device and method of fabricating the same |
US8748934B2 (en) * | 2011-09-29 | 2014-06-10 | Tsinghua University | Vertical selection transistor, memory cell, and three-dimensional memory array structure and method for fabricating the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4914055A (en) * | 1989-08-24 | 1990-04-03 | Advanced Micro Devices, Inc. | Semiconductor antifuse structure and method |
EP1376604A1 (en) * | 2002-06-21 | 2004-01-02 | Hewlett-Packard Development Company, L.P. | Memory structures |
WO2006078505A2 (en) * | 2005-01-19 | 2006-07-27 | Matrix Semiconductor, Inc. | A non-volatile memory cell comprising a dielectric layer and a phase change material in series |
US20070069276A1 (en) * | 2005-09-28 | 2007-03-29 | Scheuerlein Roy E | Multi-use memory cell and memory array |
US20070069217A1 (en) * | 2003-12-03 | 2007-03-29 | Herner S B | P-i-n diode crystallized adjacent to a silicide in series with a dielectric anitfuse |
US20070114508A1 (en) * | 2005-11-23 | 2007-05-24 | Matrix Semiconductor, Inc. | Reversible resistivity-switching metal oxide or nitride layer with added metal |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050226067A1 (en) | 2002-12-19 | 2005-10-13 | Matrix Semiconductor, Inc. | Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material |
AU2003303259A1 (en) * | 2002-12-20 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Optical information storage unit |
-
2008
- 2008-06-23 EP EP08779718A patent/EP2165337A2/en not_active Ceased
- 2008-06-23 KR KR1020107001752A patent/KR20100049564A/en not_active Application Discontinuation
- 2008-06-23 WO PCT/US2008/007758 patent/WO2009005614A2/en active Application Filing
- 2008-06-23 JP JP2010514766A patent/JP5695417B2/en not_active Expired - Fee Related
- 2008-06-23 CN CN200880024858.4A patent/CN101796588B/en active Active
- 2008-06-27 TW TW097124455A patent/TW200908205A/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4914055A (en) * | 1989-08-24 | 1990-04-03 | Advanced Micro Devices, Inc. | Semiconductor antifuse structure and method |
EP1376604A1 (en) * | 2002-06-21 | 2004-01-02 | Hewlett-Packard Development Company, L.P. | Memory structures |
US20070069217A1 (en) * | 2003-12-03 | 2007-03-29 | Herner S B | P-i-n diode crystallized adjacent to a silicide in series with a dielectric anitfuse |
WO2006078505A2 (en) * | 2005-01-19 | 2006-07-27 | Matrix Semiconductor, Inc. | A non-volatile memory cell comprising a dielectric layer and a phase change material in series |
US20070069276A1 (en) * | 2005-09-28 | 2007-03-29 | Scheuerlein Roy E | Multi-use memory cell and memory array |
US20070114508A1 (en) * | 2005-11-23 | 2007-05-24 | Matrix Semiconductor, Inc. | Reversible resistivity-switching metal oxide or nitride layer with added metal |
Also Published As
Publication number | Publication date |
---|---|
TW200908205A (en) | 2009-02-16 |
CN101796588B (en) | 2013-07-24 |
EP2165337A2 (en) | 2010-03-24 |
KR20100049564A (en) | 2010-05-12 |
JP5695417B2 (en) | 2015-04-08 |
JP2010532564A (en) | 2010-10-07 |
CN101796588A (en) | 2010-08-04 |
WO2009005614A2 (en) | 2009-01-08 |
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