WO2009001649A1 - Ｅｓｄ保護素子の製造方法 - Google Patents

Ｅｓｄ保護素子の製造方法 Download PDF

Info

Publication number
WO2009001649A1
WO2009001649A1 PCT/JP2008/060016 JP2008060016W WO2009001649A1 WO 2009001649 A1 WO2009001649 A1 WO 2009001649A1 JP 2008060016 W JP2008060016 W JP 2008060016W WO 2009001649 A1 WO2009001649 A1 WO 2009001649A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
over
conductive particles
resin
protection element
Prior art date
Application number
PCT/JP2008/060016
Other languages
English (en)
French (fr)
Inventor
Atsushi Sakurai
Yutaka Takeshima
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2009520410A priority Critical patent/JP4844673B2/ja
Publication of WO2009001649A1 publication Critical patent/WO2009001649A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00—Overvoltage arresters using spark gaps
    • H01T4/10—Overvoltage arresters using spark gaps having a single gap or a plurality of gaps in parallel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T4/00—Overvoltage arresters using spark gaps
    • H01T4/08—Overvoltage arresters using spark gaps structurally associated with protected apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　微細な導電性粒子が樹脂中に均一に分散されたＥＳＤ吸収部を備え、低い電圧で動作し、かつ、動作の安定性に優れたＥＳＤ保護素子を効率よく製造することを可能にする。 　基板１上の一対の電極３ａ，３ｂ間に形成された、樹脂中に導電性粒子を存在させてなるＥＳＤ吸収部６を備えたＥＳＤ保護素子１０の製造工程で、ＥＳＤ吸収部６を形成するにあたって、基板１上に金属膜を成膜し、金属膜を熱処理して凝集させることにより、基板１上に導電性粒子５を形成した後、基板上に一対の電極を形成する前に、または、基板上に一対の電極を形成した後に、導電性粒子上に樹脂４を供給して、導電性粒子５を樹脂４により覆う。 　基板上に前記導電性粒子を形成するにあたって、 　導電性粒子を基板上に島状に形成することにより、基板上に導電性粒子を２次元的に分布させる。
PCT/JP2008/060016 2007-06-22 2008-05-30 Ｅｓｄ保護素子の製造方法 WO2009001649A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009520410A JP4844673B2 (ja) 2007-06-22 2008-05-30 Ｅｓｄ保護素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-164517 2007-06-22
JP2007164517 2007-06-22

Publications (1)

Publication Number Publication Date
WO2009001649A1 true WO2009001649A1 (ja) 2008-12-31

Family

ID=40185471

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060016 WO2009001649A1 (ja) 2007-06-22 2008-05-30 Ｅｓｄ保護素子の製造方法

Country Status (2)

Country Link
JP (1) JP4844673B2 (ja)
WO (1) WO2009001649A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109311A (ja) * 2008-09-30 2010-05-13 Tdk Corp 複合電子部品及びその接続構造
JP2010186742A (ja) * 2009-01-14 2010-08-26 Tdk Corp 静電気対策素子及びその複合電子部品、並びに、複合基板の製造方法及び静電気対策素子の製造方法
WO2011040435A1 (ja) * 2009-09-30 2011-04-07 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
JP2011086523A (ja) * 2009-10-16 2011-04-28 Tabuchi Electric Co Ltd サージ吸収素子
JP2011187439A (ja) * 2010-02-15 2011-09-22 Murata Mfg Co Ltd Ｅｓｄ保護装置
JP2013098258A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品及びその製造方法
JP2013098259A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品
KR101323145B1 (ko) 2011-10-27 2013-10-30 (주)아트로닉스 정전기 보호용 반도체 소자의 제조방법
JP2014044931A (ja) * 2012-08-27 2014-03-13 Samsung Electro-Mechanics Co Ltd 静電放電保護素子及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523040A (ja) * 1997-11-08 2001-11-20 リッテルフューズ インコーポレイテッド 過電圧保護ポリマー組成物
JP2004014466A (ja) * 2002-06-11 2004-01-15 Mitsubishi Materials Corp チップ型サージアブソーバ及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001523040A (ja) * 1997-11-08 2001-11-20 リッテルフューズ インコーポレイテッド 過電圧保護ポリマー組成物
JP2004014466A (ja) * 2002-06-11 2004-01-15 Mitsubishi Materials Corp チップ型サージアブソーバ及びその製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109311A (ja) * 2008-09-30 2010-05-13 Tdk Corp 複合電子部品及びその接続構造
JP2010186742A (ja) * 2009-01-14 2010-08-26 Tdk Corp 静電気対策素子及びその複合電子部品、並びに、複合基板の製造方法及び静電気対策素子の製造方法
US8514536B2 (en) 2009-09-30 2013-08-20 Murata Manufacturing Co., Ltd. ESD protection device and manufacturing method therefor
CN102576981A (zh) * 2009-09-30 2012-07-11 株式会社村田制作所 Esd保护器件及其制造方法
JP4984011B2 (ja) * 2009-09-30 2012-07-25 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
WO2011040435A1 (ja) * 2009-09-30 2011-04-07 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
KR101298992B1 (ko) * 2009-09-30 2013-08-23 가부시키가이샤 무라타 세이사쿠쇼 Ｅｓｄ 보호 디바이스 및 그 제조방법
JP2011086523A (ja) * 2009-10-16 2011-04-28 Tabuchi Electric Co Ltd サージ吸収素子
JP2011187439A (ja) * 2010-02-15 2011-09-22 Murata Mfg Co Ltd Ｅｓｄ保護装置
KR101323145B1 (ko) 2011-10-27 2013-10-30 (주)아트로닉스 정전기 보호용 반도체 소자의 제조방법
JP2013098258A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品及びその製造方法
JP2013098259A (ja) * 2011-10-28 2013-05-20 Tdk Corp 複合電子部品
KR101376584B1 (ko) * 2011-10-28 2014-03-20 티디케이가부시기가이샤 복합 전자 부품 및 그 제조 방법
JP2014044931A (ja) * 2012-08-27 2014-03-13 Samsung Electro-Mechanics Co Ltd 静電放電保護素子及びその製造方法
US9153957B2 (en) 2012-08-27 2015-10-06 Samsung Electro-Mechanics Co., Ltd. Electrostatic discharge protection device and method for manufacturing the same

Also Published As

Publication number Publication date
JP4844673B2 (ja) 2011-12-28
JPWO2009001649A1 (ja) 2010-08-26

Similar Documents

Publication Publication Date Title
WO2009001649A1 (ja) Ｅｓｄ保護素子の製造方法
WO2019099171A3 (en) Fabrication methods
WO2008091648A3 (en) Structure and method for self protection of power device
WO2009142869A3 (en) Methods of forming structures supported by semiconductor substrates
WO2011163416A3 (en) Protective films for dry application to protected surfaces
WO2018037204A8 (en) A cem switching device
JP2016066573A5 (ja)
MY163409A (en) Photosensitive resin composition,laminate utilizing same and solid-state imaging device
EP1969627A4 (en) SEMICONDUCTOR DEVICES COMPRISING VOLTAGE SWITCHING MATERIALS PROVIDING OVERVOLTAGE PROTECTION
WO2011146579A3 (en) Electrical connector between die pad and z-interconnect for stacked die assemblies
WO2012037216A3 (en) Staged via formation from both sides of chip
WO2012107556A3 (en) Electrically conductive adhesives comprising at least one metal precursor
WO2010018162A3 (de) Thermoelektrische vorrichtung
WO2009011752A3 (en) Microelectronic package element and method of fabricating thereof
PH12018501616A1 (en) Electrically conductive adhesive film and dicing-die bonding film using the same
TW200709284A (en) Electrostatic discharge protection element
WO2011025631A3 (en) Semiconductor crystal based radiation detector and method of producing the same
JP2015111742A5 (ja) 半導体装置の作製方法、及び半導体装置
PH12018501615A1 (en) Electrically conductive adhesive film and dicing-die bonding film using the same
EP1939942A3 (en) Semiconductor device and method of fabricating the same
WO2008102718A1 (ja) 半導体記憶装置
WO2012131289A3 (en) Pressure sensitive polymer composite material adapted for touch screen
WO2012151566A3 (en) Conductive filament based memory elements and methods with improved data retention and/or endurance
WO2008133037A1 (ja) 導電性粒子体及びこれを用いた異方性導電接続材料、並びに導電性粒子体の製造方法
WO2008087763A1 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08777027

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009520410

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08777027

Country of ref document: EP

Kind code of ref document: A1