WO2008147116A3 - Solar cell and method of fabricating the same - Google Patents

Solar cell and method of fabricating the same Download PDF

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Publication number
WO2008147116A3
WO2008147116A3 PCT/KR2008/003010 KR2008003010W WO2008147116A3 WO 2008147116 A3 WO2008147116 A3 WO 2008147116A3 KR 2008003010 W KR2008003010 W KR 2008003010W WO 2008147116 A3 WO2008147116 A3 WO 2008147116A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
fabricating
same
electrode
semiconductor layer
Prior art date
Application number
PCT/KR2008/003010
Other languages
French (fr)
Other versions
WO2008147116A2 (en
Inventor
Jin Hong
Jae Ho Kim
Yong Woo Shin
Original Assignee
Jusung Eng Co Ltd
Jin Hong
Jae Ho Kim
Yong Woo Shin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070110332A external-priority patent/KR101426941B1/en
Application filed by Jusung Eng Co Ltd, Jin Hong, Jae Ho Kim, Yong Woo Shin filed Critical Jusung Eng Co Ltd
Priority to CN2008800179067A priority Critical patent/CN101681941B/en
Priority to US12/597,496 priority patent/US20100132779A1/en
Publication of WO2008147116A2 publication Critical patent/WO2008147116A2/en
Publication of WO2008147116A3 publication Critical patent/WO2008147116A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A solar cell includes a first electrode on a substrate; a plurality of pillars on the first electrode; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and a second electrode over the semiconductor layer.
PCT/KR2008/003010 2007-05-30 2008-05-29 Solar cell and method of fabricating the same WO2008147116A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2008800179067A CN101681941B (en) 2007-05-30 2008-05-29 Solar cell and method of fabricating the same
US12/597,496 US20100132779A1 (en) 2007-05-30 2008-05-29 Solar cell and method of fabricating the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20070052665 2007-05-30
KR10-2007-0052665 2007-05-30
KR10-2007-0110332 2007-10-31
KR1020070110332A KR101426941B1 (en) 2007-05-30 2007-10-31 Solar cell and method for fabricating the same

Publications (2)

Publication Number Publication Date
WO2008147116A2 WO2008147116A2 (en) 2008-12-04
WO2008147116A3 true WO2008147116A3 (en) 2009-01-15

Family

ID=40075665

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/003010 WO2008147116A2 (en) 2007-05-30 2008-05-29 Solar cell and method of fabricating the same

Country Status (1)

Country Link
WO (1) WO2008147116A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000232232A (en) * 1999-02-09 2000-08-22 Sony Internatl Europ Gmbh Electronic element and formation of electronic structure
JP2001196700A (en) * 1999-10-29 2001-07-19 Nichia Chem Ind Ltd Nitride semiconductor and growth method thereof
WO2006046601A1 (en) * 2004-10-28 2006-05-04 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
KR20060074233A (en) * 2004-12-27 2006-07-03 삼성전자주식회사 Photovoltaic cell and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000232232A (en) * 1999-02-09 2000-08-22 Sony Internatl Europ Gmbh Electronic element and formation of electronic structure
JP2001196700A (en) * 1999-10-29 2001-07-19 Nichia Chem Ind Ltd Nitride semiconductor and growth method thereof
WO2006046601A1 (en) * 2004-10-28 2006-05-04 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
KR20060074233A (en) * 2004-12-27 2006-07-03 삼성전자주식회사 Photovoltaic cell and manufacturing method thereof

Also Published As

Publication number Publication date
WO2008147116A2 (en) 2008-12-04

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