WO2008146847A1 - 薄膜トランジスタ用ゲート絶縁膜形成剤 - Google Patents

薄膜トランジスタ用ゲート絶縁膜形成剤 Download PDF

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Publication number
WO2008146847A1
WO2008146847A1 PCT/JP2008/059819 JP2008059819W WO2008146847A1 WO 2008146847 A1 WO2008146847 A1 WO 2008146847A1 JP 2008059819 W JP2008059819 W JP 2008059819W WO 2008146847 A1 WO2008146847 A1 WO 2008146847A1
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Prior art keywords
insulating film
gate insulating
thin
film transistor
forming agent
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PCT/JP2008/059819
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English (en)
French (fr)
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Shinichi Maeda
Takahiro Kishioka
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Nissan Chemical Industries, Ltd.
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Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to JP2009516340A priority Critical patent/JP5196194B2/ja
Priority to US12/451,730 priority patent/US8436339B2/en
Priority to CN2008800181283A priority patent/CN101681929B/zh
Priority to KR1020097024193A priority patent/KR101451761B1/ko
Priority to EP08776934.5A priority patent/EP2157614B1/en
Publication of WO2008146847A1 publication Critical patent/WO2008146847A1/ja

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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
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  • Thin Film Transistor (AREA)
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Abstract

【課題】ゲート絶縁膜の製造直後の初期の電気特性だけでなく、ゲート絶縁膜を用いて有機薄膜トランジスタを作製する際の他の工程を経た後の電気特性や、作製された素子の電気特性における信頼性までをも考慮した新規なゲート絶縁膜形成材料の提供。 【解決手段】窒素原子上の置換基としてヒドロキシアルキル含有基を有するトリアジントリオン環を有する繰り返し単位を含むオリゴマー化合物又はポリマー化合物並びに溶媒を含むことを特徴とする薄膜トランジスタ用ゲート絶縁膜形成剤、それから得られる薄膜トランジスタ用ゲート絶縁膜及び該絶縁膜を有する薄膜トランジスタ、並びにこれらの製造方法。
PCT/JP2008/059819 2007-05-30 2008-05-28 薄膜トランジスタ用ゲート絶縁膜形成剤 WO2008146847A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009516340A JP5196194B2 (ja) 2007-05-30 2008-05-28 ゲート絶縁膜とその形成剤、製造方法及びそれを用いる薄膜トランジスタ並びにその製造方法
US12/451,730 US8436339B2 (en) 2007-05-30 2008-05-28 Gate insulating film forming agent for thin-film transistor
CN2008800181283A CN101681929B (zh) 2007-05-30 2008-05-28 薄膜晶体管用栅极绝缘膜形成剂
KR1020097024193A KR101451761B1 (ko) 2007-05-30 2008-05-28 박막 트랜지스터용 게이트 절연막 형성제
EP08776934.5A EP2157614B1 (en) 2007-05-30 2008-05-28 Gate insulating film forming agent for thin-film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-143772 2007-05-30
JP2007143772 2007-05-30

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WO2008146847A1 true WO2008146847A1 (ja) 2008-12-04

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PCT/JP2008/059819 WO2008146847A1 (ja) 2007-05-30 2008-05-28 薄膜トランジスタ用ゲート絶縁膜形成剤

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Country Link
US (1) US8436339B2 (ja)
EP (1) EP2157614B1 (ja)
JP (1) JP5196194B2 (ja)
KR (1) KR101451761B1 (ja)
CN (1) CN101681929B (ja)
TW (1) TWI456768B (ja)
WO (1) WO2008146847A1 (ja)

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WO2013035787A1 (ja) 2011-09-08 2013-03-14 日産化学工業株式会社 重合体及びそれを含む組成物並びに接着剤用組成物
JP2015109471A (ja) * 2009-11-13 2015-06-11 株式会社半導体エネルギー研究所 半導体装置
JP2021024791A (ja) * 2019-08-02 2021-02-22 四国化成工業株式会社 アリルイソシアヌレート化合物およびその合成方法

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CN108395598B (zh) * 2017-02-07 2020-06-09 中国石油化工股份有限公司 一种具有抗紫外老化性能的抗车辙剂及其制备方法
JP7368342B2 (ja) * 2020-12-07 2023-10-24 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法

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