WO2008143183A1 - Elément émettant de la lumière revêtu de verre, dispositif d'éclairage et projecteur - Google Patents

Elément émettant de la lumière revêtu de verre, dispositif d'éclairage et projecteur Download PDF

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Publication number
WO2008143183A1
WO2008143183A1 PCT/JP2008/059064 JP2008059064W WO2008143183A1 WO 2008143183 A1 WO2008143183 A1 WO 2008143183A1 JP 2008059064 W JP2008059064 W JP 2008059064W WO 2008143183 A1 WO2008143183 A1 WO 2008143183A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
semiconductor light
glass
glass coated
Prior art date
Application number
PCT/JP2008/059064
Other languages
English (en)
Japanese (ja)
Inventor
Nobuhiro Nakamura
Minoru Sekine
Syuji Matsumoto
Original Assignee
Asahi Glass Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co., Ltd. filed Critical Asahi Glass Co., Ltd.
Priority to JP2009515213A priority Critical patent/JPWO2008143183A1/ja
Publication of WO2008143183A1 publication Critical patent/WO2008143183A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

L'invention concerne un dispositif émettant de la lumière revêtu de verre dans lequel la lumière d'émission provenant d'un élément émettant de la lumière semi-conducteur peut être introduite de manière efficace dans une section de commande optique, un alignement d'une lentille et de l'élément émettant de la lumière n'est pas requis, et la lumière d'émission provenant de l'élément émettant de la lumière semi-conducteur peut être prélevée et utilisée de manière efficace. Le dispositif d'émission de lumière revêtu de verre comprend un élément (1) émettant de la lumière semi-conducteur monté sur la surface d'un substrat et émettant de la lumière dans une bande de longueur d'onde prédéterminée à partir d'une région émettant de la lumière, un verre (2) ayant une partie d'une surface sphérique plus large que la surface hémisphérique en tant que surface émettant de la lumière, intégré pour recouvrir la région émettant de la lumière de l'élément (1) émettant de la lumière semi-conducteur dans un état où la surface autre que la surface sphérique est disposée face à l'élément émettant de la lumière semi-conducteur (1), et ayant un indice de réfraction de 1,7 ou plus à la longueur d'onde de pic d'émission, le rapport de diamètre maximal de la surface de substrat de l'élément émettant de la lumière semi-conducteur à son diamètre étant de 1,8 ou plus, et une face de liaison (2A), c'est-à-dire, une partie de diffusion de lumière, pour réfracter la lumière existant dans le verre (2) sans sortir de la surface de celui-ci.
PCT/JP2008/059064 2007-05-17 2008-05-16 Elément émettant de la lumière revêtu de verre, dispositif d'éclairage et projecteur WO2008143183A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009515213A JPWO2008143183A1 (ja) 2007-05-17 2008-05-16 ガラス被覆発光素子、照明装置およびプロジェクタ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007132194 2007-05-17
JP2007-132194 2007-05-17

Publications (1)

Publication Number Publication Date
WO2008143183A1 true WO2008143183A1 (fr) 2008-11-27

Family

ID=40031884

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059064 WO2008143183A1 (fr) 2007-05-17 2008-05-16 Elément émettant de la lumière revêtu de verre, dispositif d'éclairage et projecteur

Country Status (3)

Country Link
JP (1) JPWO2008143183A1 (fr)
TW (1) TW200903866A (fr)
WO (1) WO2008143183A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038222A (ja) * 2011-08-08 2013-02-21 Citizen Holdings Co Ltd 発光デバイス
JP2017520115A (ja) * 2014-06-02 2017-07-20 スウェアフレックス ゲーエムベーハー 照明装置および照明方法
JP2017183554A (ja) * 2016-03-30 2017-10-05 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 光照射装置
CN114945861A (zh) * 2020-10-16 2022-08-26 京东方科技集团股份有限公司 背光模组及显示装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126811A (ja) * 1997-07-02 1999-01-29 Toshiba Corp 半導体発光装置
JP2002176201A (ja) * 2000-12-05 2002-06-21 Okaya Electric Ind Co Ltd 半導体発光素子
JP2005268786A (ja) * 2004-03-18 2005-09-29 Agilent Technol Inc 多数の波長変換機構を使用して合成出力光を放射する装置および方法
JP2006179511A (ja) * 2004-12-20 2006-07-06 Sumitomo Electric Ind Ltd 発光装置
JP2006203058A (ja) * 2005-01-21 2006-08-03 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
WO2006112417A1 (fr) * 2005-04-15 2006-10-26 Asahi Glass Company, Limited Dispositif electroluminescent sous scellement en verre, carte a circuit imprime avec dispositif electroluminescent sous scellement en verre et leurs procedes de fabrication
JP2006332383A (ja) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
JP2006351575A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007027540A (ja) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd 半導体発光素子およびこれを用いた照明装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126811A (ja) * 1997-07-02 1999-01-29 Toshiba Corp 半導体発光装置
JP2002176201A (ja) * 2000-12-05 2002-06-21 Okaya Electric Ind Co Ltd 半導体発光素子
JP2005268786A (ja) * 2004-03-18 2005-09-29 Agilent Technol Inc 多数の波長変換機構を使用して合成出力光を放射する装置および方法
JP2006179511A (ja) * 2004-12-20 2006-07-06 Sumitomo Electric Ind Ltd 発光装置
JP2006203058A (ja) * 2005-01-21 2006-08-03 Sumitomo Electric Ind Ltd 発光装置およびその製造方法
WO2006112417A1 (fr) * 2005-04-15 2006-10-26 Asahi Glass Company, Limited Dispositif electroluminescent sous scellement en verre, carte a circuit imprime avec dispositif electroluminescent sous scellement en verre et leurs procedes de fabrication
JP2006332383A (ja) * 2005-05-26 2006-12-07 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
JP2006351575A (ja) * 2005-06-13 2006-12-28 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007027540A (ja) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd 半導体発光素子およびこれを用いた照明装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038222A (ja) * 2011-08-08 2013-02-21 Citizen Holdings Co Ltd 発光デバイス
JP2017520115A (ja) * 2014-06-02 2017-07-20 スウェアフレックス ゲーエムベーハー 照明装置および照明方法
JP2017183554A (ja) * 2016-03-30 2017-10-05 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 光照射装置
US10131162B2 (en) 2016-03-30 2018-11-20 Hoya Candeo Optronics Corporation Light illuminating apparatus
CN114945861A (zh) * 2020-10-16 2022-08-26 京东方科技集团股份有限公司 背光模组及显示装置
CN114945861B (zh) * 2020-10-16 2023-10-17 京东方科技集团股份有限公司 背光模组及显示装置

Also Published As

Publication number Publication date
TW200903866A (en) 2009-01-16
JPWO2008143183A1 (ja) 2010-08-05

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