WO2008138182A1 - Diode électroluminescente de type à puce - Google Patents

Diode électroluminescente de type à puce Download PDF

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Publication number
WO2008138182A1
WO2008138182A1 PCT/CN2007/002948 CN2007002948W WO2008138182A1 WO 2008138182 A1 WO2008138182 A1 WO 2008138182A1 CN 2007002948 W CN2007002948 W CN 2007002948W WO 2008138182 A1 WO2008138182 A1 WO 2008138182A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal substrate
emitting diode
type light
chip type
light emitting
Prior art date
Application number
PCT/CN2007/002948
Other languages
English (en)
Chinese (zh)
Inventor
Binhai Yu
Junzheng Li
Xunli Xia
Libing Pan
Xufeng Li
Original Assignee
Foshan Nationstar Optoelectronics Limited Liability Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan Nationstar Optoelectronics Limited Liability Company filed Critical Foshan Nationstar Optoelectronics Limited Liability Company
Publication of WO2008138182A1 publication Critical patent/WO2008138182A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention relates to the field of light emitting diodes, and more particularly to a chip type light emitting diode.
  • the invention name is a chip light-emitting diode and a manufacturing method thereof, including the installation on the main printed circuit board.
  • the base is mounted to the back side of the main printed circuit board, the light emitting portion is arranged so as to coincide with the light guiding direction of the liquid crystal backlight disposed on the main printed circuit board.
  • a plurality of chip type light-emitting diodes are formed on a single integrated circuit substrate through a plurality of processes, and the integrated circuit board is divided in a final process to form a single chip type light-emitting diode.
  • the current method for improving the brightness can only change the LED die and increase the input current of the LED, which increases the production cost, and the heat dissipation problem of the LED does not have an effective solution, and the problem cannot be solved fundamentally.
  • An object of the present invention is to provide a chip type light emitting diode which is excellent in heat radiation effect, high in light extraction efficiency, stable in photoelectric characteristics, large in carrying current, and low in production cost, in order to solve the deficiencies of the prior art.
  • a chip type light emitting diode comprising a device holder, a die, a bonding wire, and an encapsulant
  • the device holder is made of a metal substrate material
  • the metal substrate is divided into Two electrodes are formed for the two parts insulated from each other, the die is placed on the metal substrate, the bonding wires are respectively connected to the die electrode and the other electrode of the metal substrate, and the encapsulant encapsulates the electrode lead of the die, the bonding wire and the metal substrate Together, the two parts of the metal substrate are insulated from each other.
  • the die is placed on a metal substrate by an adhesive, and the metal substrate is a copper substrate.
  • the adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
  • One or more dies are disposed in the same encapsulant on the metal substrate.
  • the surface of the metal substrate is provided with a metal plating layer having reflective properties.
  • the metal plating layer is silver, palladium or gold.
  • the upper surface of the package of the encapsulant is a planar type, a concave lens type or a convex lens type.
  • the encapsulant is a colorless transparent, scattering glue or fluorescent glue.
  • One or more of the die, the bonding wire and the metal substrate in the same encapsulant form a unit, and the metal substrate of the plurality of cells is an integral structure to form an array of metal substrate assembly units of M rows and N columns, wherein M 1, ⁇ Lo
  • the invention adopts a metal substrate material instead of a conventional main printed circuit board as a main device bracket, effectively solves the problem of heat aging attenuation, overcomes the conventional viewpoint of using a printed circuit board, and at the same time, uses a silver with a high reflection coefficient as a surface of the metal substrate.
  • the plating layer effectively improves the light extraction efficiency of the device.
  • the present invention places a plurality of dies on corresponding positions on the metal substrate, and after the wire bonding is completed, the dies are encapsulated by the encapsulant, and finally the entire metal substrate is separated into independent junctions.
  • the chip light-emitting diode with the structure and the electric characteristics further improves the brightness of the product, improves the heat dissipation capability of the device itself, saves the production cost, and can be applied to various slices on the basis of maintaining the excellent characteristics of the conventional chip type light-emitting diode.
  • the manufacture of light-emitting diode products has a wide range of applications.
  • Figure 1 is a top plan view of the present invention
  • Figure 2 is a cross-sectional view of the present invention
  • Figure 3 is a structural view of the final separation of the present invention.
  • Figure 4 is a structural view of the final separation in the practice of the present invention.
  • the chip type light emitting diode frame of the present invention comprises a die 1, an adhesive, a bonding wire 2, an encapsulant 3, and a metal substrate 4 is used as a device holder.
  • a copper substrate and a metal are used.
  • the substrate 4 is fabricated into an LED bracket having electrical connection by etching or die-cutting.
  • the metal substrate is divided into two parts which are insulated from each other to form two electrodes, and the die is placed in the cavity of the metal substrate, and the bonding wires 2 are respectively connected to the tube.
  • the core electrode and another part of the metal substrate, the encapsulant encapsulates the die 1, the bonding leads 2, the electrode pins 5 of the metal substrate, and connects the two portions of the metal substrate.
  • the adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
  • the upper surface of the package of the encapsulant 3 is a flat type, a concave lens plough or a convex lens type. In this embodiment, the upper surface of the encapsulant 1 has a planar shape, and the number of dies in the same encapsulant on the metal substrate 4 is 1 to N, wherein N 1.
  • One or more dies, bond wires and metal substrates in the same encapsulant form a unit, and the metal substrates of the plurality of units form a monolithic structure to form a matrix of metal substrate assembly units of M rows and N columns, wherein M 1, N ⁇ lo
  • the surface of the metal substrate is plated with silver, palladium or gold.
  • the encapsulant is colorless, transparent, scattering or fluorescent.
  • the metal substrate is first processed by chemical etching to facilitate the placement of the die, and the device has independent structure and complete electrical characteristics after molding.
  • the main process route is as follows: Material preparation, plate making, substrate coating, sensitizing oil, exposure After etching and cleaning, the LED chip is placed on the designated position of the metal substrate, and the die electrode is connected to the electrode lead by the gold wire; then, the semi-finished product of the wire bonding is packaged, and the resin is solidified; finally, The chip type LED metal substrate combination is separated into a single device, and the photoelectric parameter test of the product is carried out, and the product is divided into different grades, and the inspection qualified product is packaged and stored.
  • the chip type light emitting diode of the invention has higher brightness and stable photoelectric characteristics than the conventional chip type light emitting diode, and the main characteristic parameter test data is compared as follows:

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

La diode électroluminescente de type à puce selon la présente invention comprend un cadre, un dé (1), un liant, un fil de connexion (2) et un matériau d'étanchéité (3). La diode électroluminescente de type à puce utilise un substrat métallique (4) en tant que cadre. Le substrat métallique (4) est divisé en deux électrodes isolées l'une par rapport à l'autre. Le liant permet de monter le dé sur une électrode du substrat métallique. Une autre électrode (5) du substrat métallique est connectée à une électrode du dé (1) par le fil de connexion (2). Le matériau d'étanchéité (3) encapsule le dé (1), le fil de connexion (2) et le substrat métallique (4).
PCT/CN2007/002948 2007-05-15 2007-10-15 Diode électroluminescente de type à puce WO2008138182A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2007100279927A CN101060152A (zh) 2007-05-15 2007-05-15 一种片式发光二极管
CN200710027992.7 2007-05-15

Publications (1)

Publication Number Publication Date
WO2008138182A1 true WO2008138182A1 (fr) 2008-11-20

Family

ID=38866132

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/002948 WO2008138182A1 (fr) 2007-05-15 2007-10-15 Diode électroluminescente de type à puce

Country Status (2)

Country Link
CN (1) CN101060152A (fr)
WO (1) WO2008138182A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102184906B (zh) * 2011-03-31 2013-05-08 锐迪科创微电子（北京）有限公司 带有绝缘体填充的阱结构的封装基板及其制造方法
CN103367622A (zh) * 2013-07-05 2013-10-23 江苏华英光宝科技股份有限公司 全角度发光led支架与包含该支架的led灯柱及其制备方法
US20220005790A1 (en) * 2018-09-07 2022-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, and electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077725A (ja) * 1998-08-27 2000-03-14 Shichizun Denshi:Kk 半導体のパッケージおよびその製造方法
US6822269B2 (en) * 2001-11-26 2004-11-23 Citizen Electronics Co., Ltd. Light emitting diode device
CN1855561A (zh) * 2005-04-30 2006-11-01 三星电机株式会社 发光二极管封装的制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077725A (ja) * 1998-08-27 2000-03-14 Shichizun Denshi:Kk 半導体のパッケージおよびその製造方法
US6822269B2 (en) * 2001-11-26 2004-11-23 Citizen Electronics Co., Ltd. Light emitting diode device
CN1855561A (zh) * 2005-04-30 2006-11-01 三星电机株式会社 发光二极管封装的制造方法

Also Published As

Publication number Publication date
CN101060152A (zh) 2007-10-24

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