WO2008136372A1 - フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物 - Google Patents
フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物 Download PDFInfo
- Publication number
- WO2008136372A1 WO2008136372A1 PCT/JP2008/058009 JP2008058009W WO2008136372A1 WO 2008136372 A1 WO2008136372 A1 WO 2008136372A1 JP 2008058009 W JP2008058009 W JP 2008058009W WO 2008136372 A1 WO2008136372 A1 WO 2008136372A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoresist
- base material
- same
- composition containing
- acid
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
- C07C69/67—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids
- C07C69/708—Ethers
- C07C69/712—Ethers the hydroxy group of the ester being etherified with a hydroxy compound having the hydroxy group bound to a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C43/00—Ethers; Compounds having groups, groups or groups
- C07C43/30—Compounds having groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2601/00—Systems containing only non-condensed rings
- C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
- C07C2601/14—The ring being saturated
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2602/00—Systems containing two condensed rings
- C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
- C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/58—Ring systems containing bridged rings containing three rings
- C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
- C07C2603/74—Adamantanes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/92—Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Abstract
酸解離性溶解抑止基を有する化合物を含み、前記酸解離性溶解抑止基の少なくとも1つが、分子量が60以上2000以下である単環状構造又は複環状構造を有し、前記酸解離性溶解抑止基が少なくとも炭素原子、水素原子及び酸素原子を含んでなるフォトレジスト基材。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009512958A JPWO2008136372A1 (ja) | 2007-04-27 | 2008-04-25 | フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007119551 | 2007-04-27 | ||
JP2007-119551 | 2007-04-27 | ||
JP2007-301839 | 2007-11-21 | ||
JP2007301839 | 2007-11-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008136372A1 true WO2008136372A1 (ja) | 2008-11-13 |
Family
ID=39943481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/058009 WO2008136372A1 (ja) | 2007-04-27 | 2008-04-25 | フォトレジスト基材、及びそれを含んでなるフォトレジスト組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2008136372A1 (ja) |
TW (1) | TW200905398A (ja) |
WO (1) | WO2008136372A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009173625A (ja) * | 2007-05-09 | 2009-08-06 | Mitsubishi Gas Chem Co Inc | 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法 |
JP2010262241A (ja) * | 2009-05-11 | 2010-11-18 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物 |
JP2011028270A (ja) * | 2009-07-23 | 2011-02-10 | Internatl Business Mach Corp <Ibm> | カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス |
CN102666461A (zh) * | 2009-11-27 | 2012-09-12 | 三菱瓦斯化学株式会社 | 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法 |
JP2013079230A (ja) * | 2011-09-23 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | カリックスアレーンおよびこれを含むフォトレジスト組成物 |
CN105206526A (zh) * | 2014-06-23 | 2015-12-30 | 东京毅力科创株式会社 | 基板处理方法、基板处理装置以及基板处理*** |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110183297A (zh) * | 2019-07-06 | 2019-08-30 | 潍坊大耀新材料有限公司 | 一种亲生物性通用杯芳烃中间体的制备方法及其制备的杯芳烃中间体 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004036315A1 (ja) * | 2002-10-15 | 2004-04-29 | Idemitsu Kosan Co., Ltd. | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
WO2005097725A1 (ja) * | 2004-04-05 | 2005-10-20 | Idemitsu Kosan Co., Ltd. | カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物 |
-
2008
- 2008-04-25 TW TW097115449A patent/TW200905398A/zh unknown
- 2008-04-25 JP JP2009512958A patent/JPWO2008136372A1/ja not_active Withdrawn
- 2008-04-25 WO PCT/JP2008/058009 patent/WO2008136372A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004036315A1 (ja) * | 2002-10-15 | 2004-04-29 | Idemitsu Kosan Co., Ltd. | フォトレジスト基材及びその精製方法、並びにフォトレジスト組成物 |
WO2005097725A1 (ja) * | 2004-04-05 | 2005-10-20 | Idemitsu Kosan Co., Ltd. | カリックスレゾルシナレン化合物、フォトレジスト基材及びその組成物 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009173625A (ja) * | 2007-05-09 | 2009-08-06 | Mitsubishi Gas Chem Co Inc | 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法 |
JP2010262241A (ja) * | 2009-05-11 | 2010-11-18 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物 |
JP2011028270A (ja) * | 2009-07-23 | 2011-02-10 | Internatl Business Mach Corp <Ibm> | カリックスアレーン・ブレンド分子ガラス・フォトレジスト及び使用のプロセス |
CN102666461A (zh) * | 2009-11-27 | 2012-09-12 | 三菱瓦斯化学株式会社 | 环状化合物、其生产方法、放射线敏感性组合物和抗蚀图案形成方法 |
US8969629B2 (en) | 2009-11-27 | 2015-03-03 | Mitsubishi Gas Chemical Company, Inc. | Cyclic compound, production process thereof, radiation-sensitive composition and resist pattern formation method |
JP2013079230A (ja) * | 2011-09-23 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | カリックスアレーンおよびこれを含むフォトレジスト組成物 |
CN105206526A (zh) * | 2014-06-23 | 2015-12-30 | 东京毅力科创株式会社 | 基板处理方法、基板处理装置以及基板处理*** |
JP2016027617A (ja) * | 2014-06-23 | 2016-02-18 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム及び記憶媒体 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008136372A1 (ja) | 2010-07-29 |
TW200905398A (en) | 2009-02-01 |
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