WO2008129891A1 - エッチング用組成物及びエッチング方法 - Google Patents

エッチング用組成物及びエッチング方法 Download PDF

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Publication number
WO2008129891A1
WO2008129891A1 PCT/JP2008/051873 JP2008051873W WO2008129891A1 WO 2008129891 A1 WO2008129891 A1 WO 2008129891A1 JP 2008051873 W JP2008051873 W JP 2008051873W WO 2008129891 A1 WO2008129891 A1 WO 2008129891A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
composition
ruthenium
foul
chlorine
Prior art date
Application number
PCT/JP2008/051873
Other languages
English (en)
French (fr)
Inventor
Fumiharu Takahashi
Yasushi Hara
Original Assignee
Tosoh Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007148025A external-priority patent/JP2008280605A/ja
Application filed by Tosoh Corporation filed Critical Tosoh Corporation
Publication of WO2008129891A1 publication Critical patent/WO2008129891A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

　装置を汚染せず、低コストで、強アルカリを使用することなく、ルテニウムをエッチングできる、エッチング用組成物、及びそれを用いたエッチング方法を提供する。 　塩素及び水を含み、フッ素を含まず、なおかつｐＨが１２未満であることを特徴とするルテニウムのエッチング用組成物。
PCT/JP2008/051873 2007-04-13 2008-02-05 エッチング用組成物及びエッチング方法 WO2008129891A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-105720 2007-04-13
JP2007105720 2007-04-13
JP2007148025A JP2008280605A (ja) 2006-12-21 2007-06-04 エッチング用組成物及びエッチング方法
JP2007-148025 2007-06-04

Publications (1)

Publication Number Publication Date
WO2008129891A1 true WO2008129891A1 (ja) 2008-10-30

Family

ID=39875421

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051873 WO2008129891A1 (ja) 2007-04-13 2008-02-05 エッチング用組成物及びエッチング方法

Country Status (1)

Country Link
WO (1) WO2008129891A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
EP3926662A4 (en) * 2019-02-13 2023-01-11 Tokuyama Corporation PROCESSING SOLUTION CONTAINING ONIUM SALT FOR SEMICONDUCTOR WAFER

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315670A (ja) * 1999-04-30 2000-11-14 Nec Corp 半導体基板の洗浄方法
JP2001237389A (ja) * 2000-02-24 2001-08-31 Nec Corp 半導体装置の製造方法
JP2001240985A (ja) * 1999-12-20 2001-09-04 Hitachi Ltd 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP2002016053A (ja) * 2000-06-28 2002-01-18 Hitachi Ltd 半導体装置の製造方法
JP2007009331A (ja) * 2005-06-28 2007-01-18 Lg Philips Lcd Co Ltd エッチング組成物、及び液晶表示装置用アレイ基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315670A (ja) * 1999-04-30 2000-11-14 Nec Corp 半導体基板の洗浄方法
JP2001240985A (ja) * 1999-12-20 2001-09-04 Hitachi Ltd 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP2001237389A (ja) * 2000-02-24 2001-08-31 Nec Corp 半導体装置の製造方法
JP2002016053A (ja) * 2000-06-28 2002-01-18 Hitachi Ltd 半導体装置の製造方法
JP2007009331A (ja) * 2005-06-28 2007-01-18 Lg Philips Lcd Co Ltd エッチング組成物、及び液晶表示装置用アレイ基板の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3926663A4 (en) * 2019-02-13 2022-12-21 Tokuyama Corporation SEMICONDUCTOR WAFER TREATMENT LIQUID WITH HYPOCHLORITIONS AND PH BUFFER
EP3926662A4 (en) * 2019-02-13 2023-01-11 Tokuyama Corporation PROCESSING SOLUTION CONTAINING ONIUM SALT FOR SEMICONDUCTOR WAFER
US12024663B2 (en) 2019-02-13 2024-07-02 Tokuyama Corporation Onium salt-containing treatment liquid for semiconductor wafers

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